CN108336023A - Miniature OLED display and preparation method thereof - Google Patents
Miniature OLED display and preparation method thereof Download PDFInfo
- Publication number
- CN108336023A CN108336023A CN201810090618.XA CN201810090618A CN108336023A CN 108336023 A CN108336023 A CN 108336023A CN 201810090618 A CN201810090618 A CN 201810090618A CN 108336023 A CN108336023 A CN 108336023A
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- inorganic layer
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- inorganic
- oled display
- substrate
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
Abstract
The present invention provides miniature OLED displays, include the thin-film encapsulation layer of substrate, the OLED device and the encapsulation OLED device that are set on the substrate.The thin-film encapsulation layer is inorganic thin film encapsulated layer.The inorganic thin film encapsulated layer has at least two layers inorganic layer stacked gradually, the stress direction presented between the adjacent inorganic layer opposite.The present invention also provides the production methods of the miniature OLED display, by depositing multilayer inorganic layer on substrate and OLED device to realize the encapsulation to OLED device, it is opposite by controlling the stress direction between adjacent inorganic layer, so that the stress between adjacent inorganic layer is cancelled out each other, to deposit the thin-film encapsulation layer that thickness is small, stress is low, moisture permeability is low, technical process is simple；The thickness of the thin-film encapsulation layer of the miniature OLED display made of this method reduces, and reduces optical crosstalk.
Description
Technical field
The present invention relates to organic electro-optic device technical field more particularly to a kind of miniature OLED display and its making sides
Method.
Background technology
OLED (Organic Light-Emitting Diode, Organic Light Emitting Diode) device have fast response time,
The excellent properties such as visual angle is wide, the high and low power consumption of brightness, and be selfluminous element, it is considered to be have under having great prospects for development
Generation display technology.
Microdisplay on silicon is a kind of high PPI (Pixels Per Inch) display device.Currently, mainly using flat
Face RGB structures and white light OLED add both colored implementations of RGB filter to realize colored display.For plane RGB structures,
It is complex as colour element using by RGB sub-pixels arranged side by side.RGB sub-pixels send out the light of Dimmable respectively, through space
The colourama of different brightness is showed after colour mixture.The program is the current realization simplest method of OLED full-color EL displays, is not required to
Additional power consumption is wanted, still, the program needs individually growth RGB three primary colours OLED, increases production cost.For white
Light OLED adds RGB filter structure, is that the light that white light OLED is sent out is realized RGB tri- again after the optical filtering of RGB three primary colours optical filters
The mixing of color.RGB three primary colours OLED need not be individually grown in the program, reduce production cost.Currently, silicon substrate micro display
Device mostly uses white light OLED and the scheme of RGB filter is added to realize colored display.
Effective encapsulation can prevent organic material aging, extend the OLED device service life.Currently, microdisplay on silicon is adopted more
With thin-film package, the i.e. mode of organic material and inorganic material alternating deposit, wherein inorganic layer using plasma enhancing chemistry
Vapour deposition process (PECVD) deposits, and organic layer mostly uses organic printing technique and formed.Refering to Figure 1, using existing encapsulation
The OLED display that technique makes, including substrate 1, white light OLED layer 2, RGB filter 3 and for encapsulating white light OLED layer
2 thin-film encapsulation layer 4.Wherein, the organic layer in thin-film encapsulation layer 4 is thicker, and the thickness D of the thin-film encapsulation layer 4 of formation is more than 7 μ
M, cause there are it is serious go out optical crosstalk.
In view of this, it is necessary to provide a kind of improved miniature OLED display and preparation method thereof, it is above-mentioned to solve
Problem.
Invention content
The purpose of the present invention is to provide a kind of miniature OLED displays for reducing encapsulation layer thickness, reducing out optical crosstalk
And preparation method thereof.
For achieving the above object, the present invention provides a kind of miniature OLED display, including substrate, it is set to institute
The thin-film encapsulation layer of the OLED device and the encapsulation OLED device on substrate is stated, the thin-film encapsulation layer is sealed for inorganic thin film
Layer is filled, the inorganic thin film encapsulated layer has at least two layers inorganic layer stacked gradually, presented between the adjacent inorganic layer
Stress direction it is opposite.
As a further improvement on the present invention, the material of inorganic layer described in single layer is silica, silicon nitride, aluminium oxide, oxygen
Change one or more of titanium.
As a further improvement on the present invention, pass through plasma enhanced chemical vapor deposition method or atomic layer deposition method
Form the inorganic layer.
As a further improvement on the present invention, the inorganic thin film encapsulated layer has four layers of inorganic layer, is followed successively by the first nothing
Machine layer, the second inorganic layer, third inorganic layer and the 4th inorganic layer, first inorganic layer deposition are described on the substrate
Second inorganic layer deposition is on first inorganic layer, and the third inorganic layer deposition is on second inorganic layer, and described
For four inorganic layer depositions on the third inorganic layer, first inorganic layer, the third inorganic layer are presented tensile stress, and described the
Compression is presented in two inorganic layers, the 4th inorganic layer.
As a further improvement on the present invention, the inorganic thin film encapsulated layer has four layers of inorganic layer, is followed successively by the first nothing
Machine layer, the second inorganic layer, third inorganic layer and the 4th inorganic layer, first inorganic layer deposition are described on the substrate
Second inorganic layer deposition is on first inorganic layer, and the third inorganic layer deposition is on second inorganic layer, and described
For four inorganic layer depositions on the third inorganic layer, first inorganic layer, the third inorganic layer are presented compression, and described the
Tensile stress is presented in two inorganic layers, the 4th inorganic layer.
As a further improvement on the present invention, the thickness of the inorganic thin film encapsulated layer is less than 1um.
For achieving the above object, the present invention also provides a kind of production methods of miniature OLED display, including
Following steps：
S1 provides substrate, forms OLED device on the substrate；
S2 deposits the first inorganic layer using technique for atomic layer deposition in the substrate, the OLED device；
S3 forms the second inorganic layer using technique for atomic layer deposition on first inorganic layer；
Wherein, first inorganic layer is opposite with the stress direction that second inorganic layer is presented.
As a further improvement on the present invention, the production method of the miniature OLED display further includes following steps：
S4 forms third inorganic layer using technique for atomic layer deposition on second inorganic layer；
S5 forms the 4th inorganic layer using technique for atomic layer deposition on the third inorganic layer；
Wherein, the stress direction presented between adjacent inorganic layer is opposite.
As a further improvement on the present invention, further include to first inorganic layer before forming second inorganic layer
Surface activation process is carried out, further includes being carried out at surface active to second inorganic layer before forming the third inorganic layer
Reason further includes carrying out surface activation process to the third inorganic layer before forming the 4th inorganic layer.
As a further improvement on the present invention, by control atomic layer deposition process in reaction temperature, gas concentration or
The amount of person's reaction gas is to realize the stress direction of control inorganic layer presentation.
The beneficial effects of the invention are as follows：The production method of the miniature OLED display of the present invention passes through in substrate and OLED
Multilayer inorganic layer is deposited on device to realize the encapsulation to OLED device, by controlling the stress direction phase between adjacent inorganic layer
Instead so that the stress between adjacent inorganic layer is cancelled out each other, to deposit the film that thickness is small, stress is low, moisture permeability is low
Encapsulated layer, technical process are simple；The thickness of the thin-film encapsulation layer of the miniature OLED display made of this method reduces, and subtracts
Optical crosstalk is lacked.
Description of the drawings
Fig. 1 is the structural schematic diagram of OLED display in the prior art.
Fig. 2 is the structural schematic diagram of the miniature OLED display of the present invention.
Fig. 3 is the structural schematic diagram of inorganic thin film encapsulated layer in Fig. 2.
Fig. 4 is the flow diagram of the miniature OLED display production method of the present invention.
Specific implementation mode
To make the objectives, technical solutions, and advantages of the present invention clearer, right in the following with reference to the drawings and specific embodiments
The present invention is described in detail.
Here, it should also be noted that, in order to avoid having obscured the present invention because of unnecessary details, in the accompanying drawings only
Show the structure and/or processing step closely related with the solution of the present invention, and be omitted with relationship of the present invention less its
His details.
In addition, it should also be noted that, the terms "include", "comprise" or its any other variant be intended to it is non-exclusive
Property include so that including a series of elements process, method, article or equipment not only include those elements, but also
Further include other elements that are not explicitly listed, or further include for this process, method, article or equipment it is intrinsic
Element.
It please refers to shown in Fig. 2 to Fig. 3, a kind of miniature OLED display 100, including substrate 1, is set to the substrate 1
On OLED device 2, the colored filter 3 above the OLED device 2, the lid above the colored filter 3
Plate 5, the encapsulation OLED device 2 thin-film encapsulation layer 4 and positioned at the colored filter 3 and the thin-film encapsulation layer 4 it
Between the photoresist layer 6.The thin-film encapsulation layer 4 is inorganic thin film encapsulated layer.The inorganic thin film encapsulated layer 4 has extremely
Lack two layers of inorganic layer stacked gradually, the stress direction presented between the adjacent inorganic layer is opposite.Inorganic layer described in single layer
Material be silica, silicon nitride, aluminium oxide, one or more of titanium oxide.The inorganic layer have excellent steam,
Oxygen barrier performance can effectively slow down the decaying in the service life and stability of the OLED device 2.
In the present embodiment, the inorganic thin film encapsulated layer 4 have four layers of inorganic layer, be followed successively by the first inorganic layer 41,
Second inorganic layer 42, third inorganic layer 43 and the 4th inorganic layer 44.Pass through plasma enhanced chemical vapor deposition method
(PECVD) or atomic layer deposition method (ALD) forms the inorganic layer.First inorganic layer 41 is deposited on the substrate 1,
Second inorganic layer 42 is deposited on first inorganic layer 41, and the third inorganic layer 43 is deposited on second inorganic layer
On 42, the 4th inorganic layer 44 is deposited on the third inorganic layer 43.First inorganic layer 41, the third inorganic layer
43 are presented tensile stress (stress direction direction as shown by the arrows in Figure 3), and second inorganic layer 42, the 4th inorganic layer 44 are in
Existing compression (stress direction direction as shown by the arrows in Figure 3).So set, being omitted thicker in conventional films encapsulated layer
Organic film, the stress direction between adjacent inorganic layer is on the contrary, the stress of different directions is cancelled out each other so that the institute deposited
The stress for stating inorganic thin film encapsulated layer 4 is smaller, realize deposit thickness is thin, stress is low, low moisture permeability it is described inorganic thin
Film encapsulated layer 4.It should be appreciated that the number of plies of the inorganic layer is not restricted, can be configured according to actual application environment；Also need
It is noted that compression can also be presented in first inorganic layer 41, answered correspondingly, second inorganic layer 42 presents to draw
Compression is presented in power, the third inorganic layer 43, and the 4th inorganic layer 44 is presented tensile stress, only needs to ensure, adjacent is inorganic
The stress direction presented between layer is opposite.
The OLED device 2 be passive drive organic electroluminescence device or active drive organic electroluminescent device,
In invention, the concrete structure of the OLED device 2 not limits.
The substrate 1 is silicon substrate.
It please refers to shown in Fig. 4, the production method of the miniature OLED display 100 includes the following steps：
S1 provides substrate 1, and OLED device 2 is formed on the substrate 1；
S2 deposits the first inorganic layer 41 using technique for atomic layer deposition in the substrate 1, the OLED device 2；
S3 forms the second inorganic layer 42 using technique for atomic layer deposition on first inorganic layer 41；
S4 forms third inorganic layer 43 using technique for atomic layer deposition on second inorganic layer 42；
S5 forms the 4th inorganic layer 44 using technique for atomic layer deposition on the third inorganic layer 43；
Wherein, by controlling reaction temperature, plasma density, gas concentration or reaction in atomic layer deposition process
The amount of gas is to realize the stress direction of control inorganic layer presentation.In the present invention, it controls and presents between adjacent inorganic layer
Stress direction is opposite.In this way, the stress between adjacent inorganic layer is cancelled out each other, after curing process, inorganic thin film is obtained
The thickness L of encapsulated layer 4, the inorganic thin film encapsulated layer 4 is less than 1um, reduces optical crosstalk.
Preferably, further include that surface active is carried out to first inorganic layer 41 before forming second inorganic layer 42
Processing further includes carrying out surface activation process to second inorganic layer 42 before forming the third inorganic layer 43, in shape
Further include that surface activation process is carried out to the third inorganic layer 43 before at the 4th inorganic layer 44, it is preferably thin to obtain
Film adhesion strength.Surface activation process can be ion surface activation process.
In conclusion the production method of the miniature OLED display 100 of the present invention passes through in the substrate 1, described
Multilayer inorganic layer is deposited in OLED device 2 to realize the encapsulation to the OLED device 2, by between the adjacent inorganic layer of control
Stress direction is opposite so that the stress between adjacent inorganic layer is cancelled out each other, and to deposit, thickness is small, stress is low, water vapo r transmission
The low thin-film encapsulation layer 4 of rate, technical process is simple；The miniature OLED display 100 made of this method
The thickness of the thin-film encapsulation layer 4 reduces, and reduces optical crosstalk, extends the use of the miniature OLED display 100
Service life.
The above examples are only used to illustrate the technical scheme of the present invention and are not limiting, although with reference to preferred embodiment to this hair
It is bright to be described in detail, it will be understood by those of ordinary skill in the art that, it can modify to technical scheme of the present invention
Or equivalent replacement, without departing from the spirit of the technical scheme of the invention and range.
Claims (10)
1. a kind of miniature OLED display, including described in substrate, the OLED device that is set on the substrate and encapsulation
The thin-film encapsulation layer of OLED device, it is characterised in that：The thin-film encapsulation layer is inorganic thin film encapsulated layer, the inorganic thin film envelope
Filling layer has at least two layers inorganic layer stacked gradually, the stress direction presented between the adjacent inorganic layer opposite.
2. miniature OLED display according to claim 1, it is characterised in that：The material of inorganic layer described in single layer is oxygen
One or more of SiClx, silicon nitride, aluminium oxide, titanium oxide.
3. miniature OLED display according to claim 2, it is characterised in that：Pass through plasma enhanced chemical vapor
Sedimentation or atomic layer deposition method form the inorganic layer.
4. miniature OLED display according to claim 1, it is characterised in that：The inorganic thin film encapsulated layer has four
Layer inorganic layer, is followed successively by the first inorganic layer, the second inorganic layer, third inorganic layer and the 4th inorganic layer, first inorganic layer
It is deposited on the substrate, second inorganic layer deposition is on first inorganic layer, and the third inorganic layer deposition is in institute
State on the second inorganic layer, the 4th inorganic layer deposition on the third inorganic layer, first inorganic layer, the third without
Tensile stress is presented in machine layer, and compression is presented in second inorganic layer, the 4th inorganic layer.
5. miniature OLED display according to claim 1, it is characterised in that：The inorganic thin film encapsulated layer has four
Layer inorganic layer, is followed successively by the first inorganic layer, the second inorganic layer, third inorganic layer and the 4th inorganic layer, first inorganic layer
It is deposited on the substrate, second inorganic layer deposition is on first inorganic layer, and the third inorganic layer deposition is in institute
State on the second inorganic layer, the 4th inorganic layer deposition on the third inorganic layer, first inorganic layer, the third without
Compression is presented in machine layer, and tensile stress is presented in second inorganic layer, the 4th inorganic layer.
6. miniature OLED display according to claim 1, it is characterised in that：The thickness of the inorganic thin film encapsulated layer
Less than 1um.
7. a kind of production method of miniature OLED display, includes the following steps：
S1 provides substrate, forms OLED device on the substrate；
S2 deposits the first inorganic layer using technique for atomic layer deposition in the substrate, the OLED device；
S3 forms the second inorganic layer using technique for atomic layer deposition on first inorganic layer；
Wherein, first inorganic layer is opposite with the stress direction that second inorganic layer is presented.
8. the production method of miniature OLED display according to claim 7, it is characterised in that：Further include walking as follows
Suddenly：
S4 forms third inorganic layer using technique for atomic layer deposition on second inorganic layer；
S5 forms the 4th inorganic layer using technique for atomic layer deposition on the third inorganic layer；
Wherein, the stress direction presented between adjacent inorganic layer is opposite.
9. the production method of miniature OLED display according to claim 8, it is characterised in that：Forming described second
Further include that surface activation process is carried out to first inorganic layer before inorganic layer, is also wrapped before forming the third inorganic layer
Include and surface activation process carried out to second inorganic layer, further include before forming the 4th inorganic layer to the third without
Machine layer carries out surface activation process.
10. the production method of miniature OLED display according to claim 9, it is characterised in that：By controlling atom
The amount of reaction temperature, gas concentration or reaction gas in layer deposition process is to realize the stress side of control inorganic layer presentation
To.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810090618.XA CN108336023A (en) | 2018-01-30 | 2018-01-30 | Miniature OLED display and preparation method thereof |
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| CN201810090618.XA CN108336023A (en) | 2018-01-30 | 2018-01-30 | Miniature OLED display and preparation method thereof |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108922982A (en) * | 2018-07-19 | 2018-11-30 | 云谷（固安）科技有限公司 | Display panel, the display device equipped with it and display panel forming method |
| CN109802055A (en) * | 2019-02-27 | 2019-05-24 | 昆山工研院新型平板显示技术中心有限公司 | Display panel and preparation method thereof and display device |
| WO2020029351A1 (en) * | 2018-08-10 | 2020-02-13 | 武汉华星光电半导体显示技术有限公司 | Composite coating and manufacturing method therefor, and manufacturing method for oled display panel |
| CN110892504A (en) * | 2017-07-06 | 2020-03-17 | 应用材料公司 | Method for forming stacked structure of multiple deposited semiconductor layers |
| CN112349861A (en) * | 2019-12-27 | 2021-02-09 | 广东聚华印刷显示技术有限公司 | Light-emitting device, packaging structure thereof and manufacturing method thereof |
| US11075359B2 (en) | 2019-04-30 | 2021-07-27 | Wuhan Tianma Micro-Electronics Co., Ltd. | Display panel and fabrication method thereof |
| US11088350B2 (en) | 2019-04-30 | 2021-08-10 | Wuhan Tianma Micro-Electronics Co., Ltd. | Display device and method for manufacturing the same |
-
2018
- 2018-01-30 CN CN201810090618.XA patent/CN108336023A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110892504A (en) * | 2017-07-06 | 2020-03-17 | 应用材料公司 | Method for forming stacked structure of multiple deposited semiconductor layers |
| CN110892504B (en) * | 2017-07-06 | 2023-10-13 | 应用材料公司 | Method for forming stacked structure of multiple deposited semiconductor layers |
| CN108922982A (en) * | 2018-07-19 | 2018-11-30 | 云谷（固安）科技有限公司 | Display panel, the display device equipped with it and display panel forming method |
| WO2020029351A1 (en) * | 2018-08-10 | 2020-02-13 | 武汉华星光电半导体显示技术有限公司 | Composite coating and manufacturing method therefor, and manufacturing method for oled display panel |
| CN109802055A (en) * | 2019-02-27 | 2019-05-24 | 昆山工研院新型平板显示技术中心有限公司 | Display panel and preparation method thereof and display device |
| US11075359B2 (en) | 2019-04-30 | 2021-07-27 | Wuhan Tianma Micro-Electronics Co., Ltd. | Display panel and fabrication method thereof |
| US11088350B2 (en) | 2019-04-30 | 2021-08-10 | Wuhan Tianma Micro-Electronics Co., Ltd. | Display device and method for manufacturing the same |
| CN112349861A (en) * | 2019-12-27 | 2021-02-09 | 广东聚华印刷显示技术有限公司 | Light-emitting device, packaging structure thereof and manufacturing method thereof |
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Effective date of registration: 20190531 Address after: 215300 Room No. 188 Chenfeng Road, Yushan Town, Kunshan City, Suzhou City, Jiangsu Province Applicant after: Kunshan Mengxian Electronic Technology Co.,Ltd. Address before: Room D1-7179, 58 Fumin Branch, Hengsha Township, Chongming District, Shanghai, 202150 (Shanghai Hengtai Economic Development Zone) Applicant before: SHANGHAI HANLI ELECTRONIC TECHNOLOGY Co.,Ltd. |
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Application publication date: 20180727 |