CN113629110A - Display panel and display device - Google Patents

Display panel and display device Download PDF

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Publication number
CN113629110A
CN113629110A CN202110834776.3A CN202110834776A CN113629110A CN 113629110 A CN113629110 A CN 113629110A CN 202110834776 A CN202110834776 A CN 202110834776A CN 113629110 A CN113629110 A CN 113629110A
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China
Prior art keywords
layer
display panel
encapsulation
light emitting
substrate
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CN202110834776.3A
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Chinese (zh)
Inventor
王敏
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Priority to CN202110834776.3A priority Critical patent/CN113629110A/en
Publication of CN113629110A publication Critical patent/CN113629110A/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/842—Containers
    • H10K50/8426—Peripheral sealing arrangements, e.g. adhesives, sealants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

The application provides a display panel and a display device. The display panel comprises a substrate, a first buffer layer, a driving circuit layer, a light emitting structure layer and an encapsulation structure layer. The material of the substrate is metal. The first buffer layer is disposed on one side of the substrate. The driving circuit layer is arranged on one side, far away from the substrate, of the first buffer layer. The light emitting structure layer is arranged on one side, far away from the first buffer layer, of the driving circuit layer. The packaging structure layer covers the light emitting structure layer. The display panel and the display device can achieve large-size flexible display.

Description

Display panel and display device
Technical Field
The application relates to the field of display, in particular to a display panel and display equipment.
Background
The flexible Organic Light Emitting Diode (OLED) display screen has the advantages of being Light and thin, bendable, low in power consumption, high in pixel resolution and the like. The method has wide application prospect in the aspects of intelligent household appliances, wearable equipment and the like. The existing display panel is difficult to realize large-size flexible display. Therefore, a solution is needed to realize a flexible display of a large-sized display panel.
Disclosure of Invention
An object of the present application is to provide a display panel and a display apparatus to realize a large-sized flexible display of the display panel and the display apparatus.
A display panel, comprising:
the substrate is made of metal;
a first buffer layer disposed at one side of the substrate;
the driving circuit layer is arranged on one side, far away from the substrate, of the first buffer layer;
the light emitting structure layer is arranged on one side, far away from the first buffer layer, of the driving circuit layer;
and the packaging structure layer covers the light-emitting structure layer.
In some embodiments, the substrate has a thickness of 100 to 150 microns.
In some embodiments, the display panel further includes a second buffer layer disposed on a side of the encapsulation structure layer away from the light emitting structure layer.
In some embodiments, the second buffer layer includes a substrate, a barrier layer, and an optical adhesive layer sequentially stacked on the encapsulation structure layer, and the light transmittance of the second buffer layer is greater than 90%.
In some embodiments, the display panel further includes a barrier layer disposed between the first buffer layer and the driving circuit layer, the barrier layer having a thickness of 500 to 1000 nm.
In some embodiments, the display panel further includes a planarization layer disposed between the driving circuit layer and the light emitting structure layer, the planarization layer having a thickness of 3 to 5 micrometers.
In some embodiments, the light emitting structure layer includes an anode layer disposed on a side of the driving circuit layer away from the first buffer layer, a pixel defining layer disposed on a side of the anode layer away from the driving circuit layer, a light emitting layer having an opening exposing the anode layer, and a cathode layer disposed in the opening and covering the light emitting layer and the pixel defining layer.
In some embodiments, the display panel further comprises a light extraction layer disposed between the light emitting structure layer and the encapsulation structure layer, the light extraction layer having a refractive index of 1.8-2.0.
In some embodiments, the encapsulation structure layer includes a first encapsulation layer, a second encapsulation layer and a third encapsulation layer, which are sequentially stacked, wherein the refractive index of the first encapsulation layer is 1.5-1.9, the refractive index of the second encapsulation layer is 1.2-1.6, and the refractive index of the third encapsulation layer is 1.5-1.9.
The application also provides a display device, the display device comprises a terminal body and the display panel, and the display panel is arranged on the terminal body.
The application provides a display panel and a display device. The display panel comprises a substrate, a first buffer layer, a driving circuit layer, a light emitting structure layer and an encapsulation structure layer. The material of the substrate is metal. The first buffer layer is disposed on one side of the substrate. The driving circuit layer is arranged on one side, far away from the substrate, of the first buffer layer. The light emitting structure layer is arranged on one side, far away from the first buffer layer, of the driving circuit layer. The packaging structure layer covers the light emitting structure layer. The display panel and the display device can achieve large-size flexible display.
Drawings
In order to more clearly illustrate the technical solutions in the present application, the drawings needed to be used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a display panel according to an embodiment of the present application.
Fig. 2 is a cross-sectional view along line AA' of a first embodiment of a display panel provided by the present application.
Fig. 3 is a cross-sectional view along line AA' of a second embodiment of a display panel provided by the present application.
Fig. 4 is a flowchart of a method for manufacturing a display panel according to an embodiment of the present application.
Fig. 5 is a schematic structural diagram of a display device according to an embodiment of the present application.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. It should be apparent that the described embodiments are only some of the embodiments of the present application, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
It should be noted that the numerical terms "first," "second," and "third," when used herein, are not intended to denote any order, quantity, or importance, but rather are used to distinguish one element from another. The directional terms used in this application, such as upper and lower, are used solely in reference to the orientation of the appended drawings. Accordingly, the use of ordinal, directional and positional terms is to be taken as an illustration and understanding of the application and is not intended to limit the application. In the drawings, elements having similar structures are denoted by the same reference numerals.
The present application provides a display panel, and the present application will be described in detail with reference to specific embodiments.
Referring to fig. 1-2, fig. 1 is a schematic structural diagram of a display panel according to an embodiment of the present disclosure. Fig. 2 is a cross-sectional view along line AA' of a first embodiment of a display panel provided by the present application.
The display panel 100 includes a substrate 10, a first buffer layer 11, a driving circuit layer 12, a light emitting structure layer 13, and an encapsulation structure layer 14. The material of the substrate 10 is metal. The first buffer layer 11 is disposed at one side of the substrate 10. The driver circuit layer 12 is disposed on a side of the first buffer layer 11 away from the substrate 10. The light emitting structure layer 13 is disposed on a side of the driving circuit layer 12 away from the first buffer layer 11. The encapsulation structure layer 14 covers the light emitting structure layer 13.
The material of the substrate 10 is metal. The material of the substrate 10 may be an iron-nickel alloy, an iron-cobalt alloy, or an iron-silicon alloy. The substrate 10 is made of an iron-nickel alloy, but the present application is not limited thereto. The iron-nickel alloy comprises 36 percent of nickel, 63.8 percent of iron and 0.2 percent of carbon in percentage by mass of the total mass of the iron-nickel alloy. The iron-nickel alloy has a very low coefficient of thermal expansion and corrosion resistance. The present application can realize a large-sized flexible display of the display panel 100 by using an iron-nickel alloy as the substrate 10 of the display panel 100. Meanwhile, in the present application, the substrate 10 of the display panel 100 made of the iron-nickel alloy can also realize the entire surface heat dissipation of the display panel 100, thereby improving the heat dissipation performance of the display panel 100.
The first buffer layer 11 may be formed by one or more times of Coating (Coating). Specifically, the substrate 10 may be fixed in a magnetic JIG (JIG), and the first buffer layer 11 may be formed on the substrate 10 by one or more times of doctor blading (Coating). The thickness of the first buffer layer 11 is 6 to 12 micrometers. The thickness of the first buffer layer 11 may be 6 microns, 7 microns, 8 microns, 9 microns, 10 microns, 11 microns, or 12 microns. The first buffer layer 11 may be formed of an insulating plastic. The first buffer layer 11 may be formed of one or more of Polyimide (PI), Polyethylene (PE), and polyethylene terephthalate (PET). The material of the first buffer layer 11 is PI, but the present application is not limited thereto.
The first buffer layer 11 has an insulating function, so that poor display caused by short circuit between the driving circuit layer 12 and the metal on the substrate 10 can be avoided. Therefore, when the thickness of the first buffer layer 11 is excessively small, a short circuit may occur between the driving circuit layer 12 and the metal on the substrate 10. When the thickness of the first buffer layer 11 is too large, it is not favorable for the display panel 100 to realize flexible display. Therefore, the present application controls the thickness of the first buffer layer 11 to be 6 to 12 micrometers, can prevent the short circuit between the driving circuit layer 12 and the metal on the substrate 10, and can realize large-sized flexible display of the display panel 100.
In addition, the first buffer layer 11 may also enhance the bending strength of the display panel 100, buffering bending stress. The substrate 10 and the first buffer layer 11 may serve as a flexible substrate of the display panel 100. Therefore, the display panel 100 provided by the present application can realize a large-sized flexible display.
The driving circuit layer 12 includes a plurality of thin film transistors. The light emitting structure layer includes a plurality of light emitting cells. The thin film transistors are correspondingly connected to the light emitting cells, thereby realizing light emission of the display panel 100.
By arranging the encapsulating structure layer 14 covering the light emitting structure layer 13, the light emitting structure layer 13 can be prevented from being affected by external water and oxygen, and the service life of the display panel 100 is prolonged.
In some embodiments, the substrate 10 has a thickness of 100 to 150 microns.
The thickness of the substrate 10 may be 100 microns, 110 microns, 120 microns, 130 microns, 140 microns, or 150 microns. It can be understood that when the thickness of the substrate 10 is too large, it is not favorable for the display panel 100 to realize a large-sized flexible display. When the thickness of the substrate 10 is excessively small, it is difficult for the substrate 10 to support the display panel 100. The present application can realize flexible display of the display panel 100 by controlling the thickness of the substrate 10 to be 100 to 150 micrometers.
In some embodiments, the display panel 100 further includes a second buffer layer 15. The second buffer layer 15 is disposed on a side of the encapsulation structure layer 14 away from the light emitting structure layer 13.
The second buffer layer 15 may insulate water and oxygen. The second buffer layer 15 is disposed on the side of the encapsulation structure layer 14 away from the light emitting structure layer 13, so that the encapsulation effect of the display panel 100 can be further enhanced, and the encapsulation reliability of the display panel 100 can be improved.
In some embodiments, the display panel 100 further includes a barrier layer 16. The barrier layer 16 is disposed between the first buffer layer 11 and the driving circuit layer 12. The barrier layer 16 has a thickness of 500 nm to 1000 nm. The barrier layer 16 may have a thickness of 500 nanometers, 600 nanometers, 700 nanometers, 800 nanometers, 900 nanometers, or 1000 nanometers. The barrier layer 16 may be made of SiOXSiON or SiNXOne or more of (a). The barrier layer 16 may be formed using a Plasma Enhanced Chemical Vapor Deposition (PECVD) method.
In the present application, the barrier layer 16 is disposed between the first buffer layer 11 and the driving circuit layer 12, so that the driving circuit layer 12 can be prevented from being damaged by the gas overflowing from the PI, and the stability of the display panel 100 can be improved. It is understood that when the thickness of the barrier layer 16 is too small, it is difficult to block the gas overflowing in the PI, thereby damaging the driving circuit layer 12. When the thickness of the barrier layer 16 is too large, it is not favorable for the display panel 100 to realize a large-sized flexible display.
In some embodiments, the display panel 100 further includes a planarization layer 17. The planarization layer 17 is disposed between the driving circuit layer 12 and the light emitting structure layer 13. The thickness of the planarization layer 17 is 3 to 5 micrometers. The thickness of the planarization layer 17 may be 3 microns, 4 microns, or 5 microns. The planarization layer 17 may be formed of an organic photoresist. The planarization layer 17 may be formed of one or more of organic materials such as acrylic resin (AA), epoxy resin (EP), phenol resin (PF), polyamide resin (PA), and PI.
According to the application, the planarization layer 17 is arranged between the driving circuit layer 12 and the light emitting structure layer 13, so that the flatness of the driving circuit layer 12 can be improved, the subsequent preparation of the light emitting structure layer 13 is facilitated, and the product yield of the display panel 100 is further improved. It is understood that when the thickness of the planarizing layer 17 is excessively small, it is difficult to form a flat surface on the driving circuit layer 12. When the thickness of the planarization layer 17 is too large, it is not favorable for the display panel 100 to realize a large-sized flexible display. Therefore, the present application controls the thickness of the planarization layer 17 to be 3 to 5 micrometers.
In some embodiments, the light emitting structure layer 13 includes an anode layer 131, a pixel defining layer 132, a light emitting layer 133, and a cathode layer 134. The anode layer 131 is disposed on a side of the driving circuit layer 12 away from the first buffer layer 11. The pixel defining layer 132 is disposed on a side of the anode layer 131 away from the driving circuit layer 12. The pixel defining layer 132 has an opening 1321. The opening 1321 exposes the anode layer 131. The light emitting layer 133 is disposed within the opening 1321. The cathode layer 134 covers the light emitting layer 133 and the pixel defining layer 132.
The anode layer 131 may be formed of one or more of metals or metal oxides such as Indium Tin Oxide (ITO), silver (Ag), aluminum (Al), or molybdenum (Mo). The pixel defining layer 132 may be formed of an organic photoresist material. The pixel defining layer 132 may be formed of one or more of organic materials such as AA, EP, PF, PA, or PI. The pixel defining layer 132 may be prepared by an inkjet printing or evaporation method. The light emitting layer 133 may be formed of an organic material and/or an inorganic material. The light emitting layer 133 may be formed by evaporation or inkjet printing. The light emitting layer 133 may generate light of a predetermined color. Cathode layer 134 may be formed of a transparent metal material. Cathode layer 134 may be made of Mg: al, Mg: Al-ITO, LiF/Al-ITO. Cathode layer 134 may be formed by magnetron sputtering or physical vapor deposition.
In some embodiments, the display panel 100 further includes a light extraction layer 18. The light extraction layer 18 is disposed between the light emitting structure layer 13 and the encapsulation structure layer 14. The refractive index of the light extraction layer 18 is 1.8 to 2.0.
The refractive index of the light extraction layer 18 may be 1.8, 1.9, or 2.0. The light extraction layer 18 may be formed by vapor deposition. The thickness of the light extraction layer 18 is 10 nm to 20 nm. The thickness of the light extraction layer 18 may be 10 nm, 15 nm or 20 nm. The light extraction layer 18 may be formed of an organic material. The material of the light extraction layer 18 may include poly (3, 4-ethylenedioxythiophene) (PEDOT), 4 ' -bis [ N- (3-methylphenyl) -N-phenylamino ] biphenyl (TPD), 4 ' -tris [ (3-methylphenyl) phenylamino ] triphenylamine (m-MTDATA), 1,3, 5-tris [ N, N-bis (2-methylphenyl) -amino ] -benzene (o-MTDAB), 1,3, 5-tris [ N, N-bis (3-methylphenyl) -amino ] -benzene (m-MTDAB), 1,3, 5-tris [ N, N-bis (4-methylphenyl) -amino ] -benzene (p-MTDAB), 4 ' -bis [ N, N-bis (3-methylphenyl) -amino ] -diphenylmethane (BPPM) 4,4 '-dicarbazolyl-1, 1' -biphenyl (CBP), 4 '-tris (N-carbazole) triphenylamine (TCTA), 2' - (1,3, 5-benzene) tris- [ 1-phenyl-1H-phenylimidazole ] (TPBI), or 3- (4-biphenyl) -4-phenyl-5-tert-butylphenyl-1, 2, 4-Triazole (TAZ).
The light extraction layer 18 can adjust the cavity length and improve the viewing angle and the color of light of the display panel 100. Light extraction layer 18 may protect cathode layer 134 from subsequent processes, such as sputtering processes. The light extraction layer 18 can improve the light extraction efficiency of the light-emitting layer 133. Meanwhile, the present application can also improve the light emitting efficiency of the light emitting layer 133 by controlling the refractive index of the light extraction layer 18 to 1.8 to 2.0, thereby improving the light emitting efficiency of the display panel 100.
In some embodiments, the package structure layer 14 includes a first package layer 141, a second package layer 142, and a third package layer 143, which are sequentially stacked. The refractive index of the first encapsulation layer 141 is 1.5-1.9. The refractive index of the second encapsulation layer 142 is 1.2-1.6. The refractive index of the third encapsulation layer 143 is 1.5-1.9.
The refractive index of the first encapsulation layer 141 may be 1.5, 1.6, 1.7, 1.8, or 1.9. The refractive index of the second encapsulation layer 142 may be 1.2, 1.3, 1.4, 1.5, or 1.6. The refractive index of the third encapsulation layer 143 may be 1.5, 1.6, 1.7, 1.8, or 1.9. The thickness of the first encapsulation layer 141 is 500 nm to 1000 nm. The thickness of the first encapsulation layer 141 may be 500 nanometers, 600 nanometers, 700 nanometers, 800 nanometers, 900 nanometers, or 1000 nanometers. The thickness of the second encapsulation layer 142 is 3 to 5 micrometers. The thickness of the second encapsulation layer 142 may be 3 microns, 4 microns, or 5 microns. The thickness of the third encapsulation layer 143 is 500 nm to 1000 nm. The thickness of the third encapsulation layer 143 may be 500 nm, 600 nm, 700 nm, 800 nm, 900 nm, or 1000 nm. It can be understood that when the thickness of the first encapsulation layer 141, the second encapsulation layer 142, or the third encapsulation layer 143 is excessively small, it is difficult to implement encapsulation of the display panel 100. When the thickness of the first encapsulation layer 141, the second encapsulation layer 142, or the third encapsulation layer 143 is too large, it is not favorable for the display panel 100 to realize large-sized flexible display.
The first and third encapsulation layers 141 and 143 may be inorganic material layers. The second encapsulation layer 142 may be an organic material layer. The first and third encapsulation layers 141 and 143 may be made of SiOXSiON and SiNXOr (2) is performed. The first and third encapsulation layers 141 and 143 may further include titanium oxide (TiO)X) Zirconium oxide (ZrO)X) Zinc oxide (ZnO)X) Or aluminum oxide (AlO)X) One or more of (a). The second encapsulation layer 142 may be formed of acrylic or epoxy based materials. The second encapsulation layer 142 may be formed of EP, PI, PET, Polycarbonate (PC), PE, polymethyl acrylate (PMA), or the like. The second encapsulation layer 142 may be formed by means of inkjet printing.
The first and third encapsulation layers 141 and 143 may protect the light emitting structure layer 13 from moisture and water oxygen. The second encapsulation layer 142 may protect the light emitting structure layer 13 from foreign substances of dust particles. SiO in first encapsulation layer 141 and third encapsulation layer 143XOr SiON may increase the adhesion of the first encapsulation layer 141 and the second encapsulation layer 142And the adhesion of the second encapsulation layer 142 to the third encapsulation layer 143. The second encapsulation layer 142 is an organic material layer that can block water and oxygen, thereby prolonging the lifetime of the display panel 100.
By controlling the refractive indexes of the first encapsulating layer 141 and the third encapsulating layer 143 to be 1.5-1.9 and the refractive index of the second encapsulating layer 142 to be 1.2-1.6, the light extraction rate of the light emitting structure layer 13 can be improved, and thus the light emitting efficiency of the display panel 100 is improved.
Referring to fig. 3, fig. 3 is a cross-sectional view along line AA' of a second embodiment of a display panel according to the present application.
In some embodiments, the second buffer layer 15 includes a substrate 151, a barrier layer 152, and an optical adhesive layer 153 sequentially stacked on the encapsulation structure layer 14. The light transmittance of the second buffer layer 15 is greater than 90%.
The second buffer layer 15 is formed by bonding the substrate 151, the barrier layer 152, and the optical adhesive layer 153. The second buffer layer 15 may further include a transparent water-absorbing layer (not shown). The material forming the transparent water-absorbing layer may be a resin.
The substrate 151 may be formed of a flexible transparent material. The substrate 151 may be formed of one or both of PET or Cyclic Olefin Polymer (COP). The thickness of the substrate 151 is 20 micrometers to 100 micrometers. The substrate 151 may have a thickness of 20 microns, 30 microns, 40 microns, 50 microns, 60 microns, 70 microns, 80 microns, 90 microns, or 100 microns. It can be understood that when the thickness of the substrate 151 is excessively small, it is difficult to improve the encapsulation effect of the display panel 100. When the thickness of the substrate 151 is too large, it is not favorable for the display panel 100 to realize large-sized flexible display.
Barrier layer 152 may be formed from one or more of an inorganic material, a metal, or a metal oxide. The barrier layer 152 may be formed of SiOX、SiON、SiNXCu or Al2O3Or (2) is performed. The barrier layer 152 has a thickness of 0.5 to 10 microns. The thickness of barrier layer 152 may be 0.5 microns, 1 micron, 2 microns, 3 microns, 4 microns, 5 microns, 6 microns, 7 microns, 8 microns, 9 microns, or 10 microns. It is understood that when the thickness of the barrier layer 152 is excessively small, it is difficult to improve the encapsulation efficiency of the display panel 100And (5) fruit. When the thickness of the barrier layer 152 is too large, it is not favorable for the display panel 100 to realize a large-sized flexible display.
The Optical Clear Adhesive (OCA) layer 153 has a light transmission of greater than 90%. The thickness of the OCA layer 153 is 20 to 60 microns. The thickness of OCA layer 153 may be 20 microns, 30 microns, 40 microns, 50 microns, or 60 microns. It is understood that when the thickness of the OCA layer 153 is excessively small, it is difficult to improve the encapsulation effect of the display panel 100. When the thickness of the OCA layer 153 is too large, it is not favorable for the display panel 100 to realize a large-sized flexible display. The application adopts the Optical Clear Adhesive (OCA) layer 153 with the light transmittance of more than 90%, so that the luminous efficiency of the display panel 100 can be improved.
The structure of the other parts of the display panel provided by the second embodiment is the same as that of the display panel provided by the first embodiment, and is not repeated herein.
Referring to fig. 4, fig. 4 is a flowchart of a method for manufacturing a display panel according to an embodiment of the present disclosure.
With reference to fig. 2, the present application provides a method for manufacturing a display panel, including:
step B10: providing a substrate, wherein the material of the substrate is metal.
The material of the substrate 10 may be an iron-nickel alloy, an iron-cobalt alloy, or an iron-silicon alloy. The substrate 10 is made of an iron-nickel alloy, but the present application is not limited thereto.
Step B20: and sequentially forming a first buffer layer, a barrier layer, a driving circuit layer and a planarization layer on one side of the substrate.
The material of the first buffer layer 11 may be an insulating plastic. The first buffer layer 11 may be formed of PI, PE, or PET. The material of the first buffer layer 11 is PI, but the present application is not limited thereto. The first buffer layer 11 may be formed by one or more blade coating. Specifically, the substrate 10 may be fixed in a magnetic JIG (JIG), and the first buffer layer 11 may be formed on the substrate by one or more times of doctor blading (Coating). The barrier layer 16 may be made of SiOXSiON or SiNXOne or more of (a). The barrier layer 16 may be formed using a Plasma Enhanced Chemical Vapor Deposition (PECVD) method. Drive circuit layer 12 comprise a plurality of thin film transistors (not shown in the figure). The planarization layer 17 may be formed of an organic photoresist.
Step B30: and forming a light emitting structure layer on one side of the planarization layer, which is far away from the drive circuit layer, wherein the light emitting structure layer comprises an anode layer, a pixel definition layer, a light emitting layer and a cathode layer, the pixel definition layer comprises an opening, the light emitting layer is arranged in the opening, and the cathode layer covers the light emitting layer and the pixel definition layer.
The anode layer 131 may be formed of one or more of ITO, Ag, Al, Mo, or other metals or metal oxides. The anode layer 131 may be formed by magnetron sputtering. The pixel defining layer 132 may be formed of an organic photoresist material. The pixel defining layer 132 may be prepared by an inkjet printing or evaporation method. The light emitting layer 133 may include an organic material and/or an inorganic material. The light emitting layer 133 may be formed by evaporation or inkjet printing. Cathode layer 134 may be formed of a transparent metal material. Cathode layer 134 may be made of Mg: al, Mg: Al-ITO, LiF/Al-ITO. Cathode layer 134 may be formed by magnetron sputtering or physical vapor deposition.
Step B40: and forming a light extraction layer on one side of the light emitting structure layer, which is far away from the planarization layer.
The material of the light extraction layer 18 may include one or more of PEDOT, TPD, m-MTDATA, m-MTDAB, o-MTDAB, p-MTDAB, BPPM, CBP, TCTA, TPBI, or TAZ. The light extraction layer 18 may be formed by vapor deposition.
Step B50: and forming a packaging structure layer on one side of the light extraction layer far away from the light emitting structure layer, wherein the packaging structure layer comprises a first packaging layer, a second packaging layer and a third packaging layer which are sequentially stacked.
The first and third encapsulation layers 141 and 143 may be inorganic material layers. The second encapsulation layer 142 may be an organic material layer. The first and third encapsulation layers 141 and 143 may be made of SiOXSiON and SiNXOr (2) is performed. The first and third encapsulation layers 141 and 143 may further include TiOX、ZrOX、ZnOXOr AlOXAnd the like. First, theThe two encapsulation layers 142 may be formed of acrylic or epoxy materials. The second encapsulation layer 142 may be formed of EP, PI, PET, PC, PE, PMA, or the like. The first encapsulation layer 141 and the third encapsulation layer 143 may be formed by means of chemical vapor deposition. The second encapsulation layer 142 may be formed by means of inkjet printing.
Step B60: and a second buffer layer is formed on one side, far away from the light extraction layer, of the packaging structure layer, and comprises a base material, a barrier layer and an optical adhesive layer which are sequentially stacked on the packaging structure layer.
The second buffer layer 15 may be formed by attaching the substrate 151, the barrier layer 152, and the optical adhesive layer 153.
The preparation method of the display panel provided by the embodiment of the application can realize large-size flexible display of the display panel 100.
Referring to fig. 5, fig. 5 is a schematic structural diagram of a display device according to an embodiment of the present disclosure.
The present application further provides a display device 1000. The display device 1000 includes a terminal body 200 and a display panel 100 as described in any of the previous embodiments. The display panel 100 is disposed on the terminal body 200.
The application provides a display panel and a display device. The display panel comprises a substrate, a first buffer layer, a driving circuit layer, a light emitting structure layer and an encapsulation structure layer. The material of the substrate is metal. The first buffer layer is disposed on one side of the substrate. The driving circuit layer is arranged on one side, far away from the substrate, of the first buffer layer. The light emitting structure layer is arranged on one side, far away from the first buffer layer, of the driving circuit layer. The packaging structure layer covers the light emitting structure layer. The display panel and the display device can achieve large-size flexible display.
In summary, although the embodiments of the present application are described in detail above, the above-mentioned embodiments are not intended to limit the present application, and it should be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present application.

Claims (10)

1. A display panel, comprising:
the substrate is made of metal;
a first buffer layer disposed at one side of the substrate;
the driving circuit layer is arranged on one side, far away from the substrate, of the first buffer layer;
the light emitting structure layer is arranged on one side, far away from the first buffer layer, of the driving circuit layer;
and the packaging structure layer covers the light-emitting structure layer.
2. The display panel according to claim 1, wherein the substrate has a thickness of 100 to 150 μm.
3. The display panel of claim 1, further comprising a second buffer layer disposed on a side of the encapsulation structure layer away from the light emitting structure layer.
4. The display panel according to claim 3, wherein the second buffer layer comprises a substrate, a barrier layer and an optical adhesive layer sequentially stacked on the encapsulation structure layer, and the light transmittance of the second buffer layer is greater than 90%.
5. The display panel according to claim 1, further comprising a barrier layer disposed between the first buffer layer and the driving circuit layer, wherein a thickness of the barrier layer is 500 nm to 1000 nm.
6. The display panel of claim 1, further comprising a planarization layer disposed between the driving circuit layer and the light emitting structure layer, wherein the planarization layer has a thickness of 3 to 5 microns.
7. The display panel according to claim 1, wherein the light emitting structure layer includes an anode layer, a pixel defining layer, a light emitting layer, and a cathode layer, the anode layer is disposed on a side of the driving circuit layer away from the first buffer layer, the pixel defining layer is disposed on a side of the anode layer away from the driving circuit layer, the pixel defining layer has an opening exposing the anode layer, the light emitting layer is disposed in the opening, and the cathode layer covers the light emitting layer and the pixel defining layer.
8. The display panel of claim 1, further comprising a light extraction layer disposed between the light emitting structure layer and the encapsulation structure layer, wherein the light extraction layer has a refractive index of 1.8-2.0.
9. The display panel according to claim 1, wherein the encapsulation structure layer comprises a first encapsulation layer, a second encapsulation layer and a third encapsulation layer, which are sequentially stacked, and the refractive index of the first encapsulation layer is 1.5-1.9, the refractive index of the second encapsulation layer is 1.2-1.6, and the refractive index of the third encapsulation layer is 1.5-1.9.
10. A display device characterized by comprising a terminal body and the display panel according to any one of claims 1 to 9, the display panel being provided on the terminal body.
CN202110834776.3A 2021-07-23 2021-07-23 Display panel and display device Pending CN113629110A (en)

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Application publication date: 20211109