CN108565347B - A kind of oled substrate and preparation method thereof - Google Patents
A kind of oled substrate and preparation method thereof Download PDFInfo
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- CN108565347B CN108565347B CN201810377368.8A CN201810377368A CN108565347B CN 108565347 B CN108565347 B CN 108565347B CN 201810377368 A CN201810377368 A CN 201810377368A CN 108565347 B CN108565347 B CN 108565347B
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
Abstract
The embodiment of the present invention provides a kind of oled substrate and preparation method thereof, is related to field of display technology, the production of OLED lighting at two sides display can be improved.A kind of oled substrate, comprising: substrate；It is set on substrate and is located at the first transparency electrode of each subpixel area；The pixel defining layer being set on substrate, pixel defining layer include the first opening and the second opening；The first opening and the second opening are located at different subpixel areas；The first organic material functional layer being set in the first opening；It is set in pixel defining layer and the opaque electrode layer of all subpixel areas；Wherein, under the action of pixel defining layer, opaque electrode layer is divided into first part and second part, and first part and second part disconnect, and first part is located in the second opening；The second organic material functional layer being at least set in the second opening；It is set in pixel defining layer and the second transparency electrode layer of all subpixel areas, second transparency electrode layer electrically connects as one.
Description
Technical field
The present invention relates to field of display technology more particularly to a kind of oled substrate and preparation method thereof.
Background technique
Organic electroluminescent LED (Organic Light-Emitting Diode, OLED) display has spontaneous
The advantages that light, reaction be fast, visual angle light, high, frivolous brightness, it is considered to be next-generation display technology.
OLED lighting at two sides display has very big commercial application prospect due to that can carry out independent display on two sides.
Summary of the invention
The embodiment of the present invention provides a kind of oled substrate and preparation method thereof, and OLED lighting at two sides display can be improved
Production.
In order to achieve the above objectives, the embodiment of the present invention adopts the following technical scheme that
In a first aspect, providing a kind of oled substrate, comprising: substrate；It is set on the substrate and is located at each sub-pixel
The first transparency electrode in region；The pixel defining layer being set on the substrate, the pixel defining layer include first opening and
Second opening；First opening and second opening are located at different subpixel areas；It is set in first opening
The first organic material functional layer；It is set in the pixel defining layer and the opaque electrode layer of all subpixel areas；
Wherein, under the action of the pixel defining layer, the opaque electrode layer is divided into first part and second part, first part
It is disconnected with second part, first part is located in second opening；Second be at least set in second opening is organic
Material function layer；It is set in the pixel defining layer and the second transparency electrode layer of all subpixel areas, described second
Transparent electrode layer electrically connects as one.
Optionally, the shape of first opening and second opening is in halfpace；The upper surface of first opening
Area is greater than its lower surface area；The upper surface area of second opening is less than its lower surface area；Upper surface is far from described
Substrate, lower surface is close to the substrate.
Optionally, second opening includes the first son opening and the second son opening of stacking, the first son opening
Upper surface and the lower surface of the second son opening share；The first son opening and the second son opening are in halfpace, and
The upper surface area of the first son opening is greater than its lower surface area, and the upper surface area of the second son opening is less than under it
Surface area.
Further, first opening includes third opening and the 4th son opening, the upper table of the third opening
Face is a part of the lower surface of the 4th son opening；The third opening and the 4th son opening are in halfpace, and
The upper surface area of the third opening is greater than its lower surface area, and the upper surface area of the 4th son opening is less than under it
Surface area.
Optionally, the pixel defining layer is at least double-layer structure.
Optionally, the second transparency electrode thickness degree is within the scope of 50~10000nm.
Optionally, the substrate includes substrate, the thin film transistor (TFT) and flatness layer that are set on the substrate.
Second aspect provides a kind of preparation method of oled substrate, comprising: each subpixel area on substrate is formed
First transparency electrode；Pixel defining layer is formed, the pixel defining layer includes the first opening and the second opening；First opening
It is located at different subpixel areas with second opening；The first organic material functional layer is formed in first opening；In
In the pixel defining layer and all subpixel areas form opaque electrode layer；Wherein, in the work of the pixel defining layer
Under, the opaque electrode layer is divided into first part and second part, and first part and second part disconnect, first part position
In second opening；At least the second organic material functional layer is formed in second opening；In the pixel defining layer
Upper and all subpixel areas form second transparency electrode layer, and the second transparency electrode layer electrically connects as one.
Optionally, described first organic material is formed by inkjet printing mode or in the way of the hot evaporation of precision mask plate
Expect functional layer, the second organic material functional layer；By sputter coating mode or in the way of the hot evaporation of open mask plate
Form the opaque electrode layer, the second transparency electrode layer.
The third aspect provides a kind of control method of oled substrate described in first aspect, comprising: apply to first transparency electrode
Add first voltage；Apply second part from second voltage to opaque electrode layer and second transparency electrode layer.
The embodiment of the present invention provides a kind of oled substrate and preparation method thereof, by the design of pixel defining layer, in shape
When at opaque electrode layer, opaque electrode layer is set to be divided into first part and second part, and first part and second part are disconnected
It opens, first part is located in the second opening, to keep the first part of opaque electrode layer saturating with first in the second open area
Prescribed electrode is electrically connected and equipotential, collectively as anode, and under the action of second transparency electrode layer, realizes that top shines；
One open area realizes that bottom shines under the action of first transparency electrode and opaque electrode layer, and pushing up luminous shine the bottom of with can
Individually control.Wherein, it when forming opaque electrode layer, due to the structure by pixel defining layer, can be realized first
The purpose point disconnected with second part therefore can be without FMM, thus when avoidable evaporation metal material, FMM tapping
The problem of being easy to happen blocking, FMM more difficult cleaning, and then the production of OLED lighting at two sides display can be improved.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
Some embodiments of invention for those of ordinary skill in the art without creative efforts, can be with
It obtains other drawings based on these drawings.
Fig. 1 is a kind of structural schematic diagram one of oled substrate provided by the invention；
Fig. 2 is a kind of structural schematic diagram two of oled substrate provided by the invention；
Fig. 3 is a kind of structural schematic diagram three of oled substrate provided by the invention；
Fig. 4 is a kind of structural schematic diagram one of pixel defining layer provided by the invention；
Fig. 5 is a kind of structural schematic diagram two of pixel defining layer provided by the invention；
Fig. 6 is a kind of structural schematic diagram three of pixel defining layer provided by the invention；
Fig. 7 is a kind of flow diagram of the preparation method of oled substrate provided by the invention；
Fig. 8 (a)~Fig. 8 (c) is a kind of process schematic one for preparing oled substrate provided by the invention；
Fig. 9 (a)~Fig. 9 (c) is a kind of process schematic two for preparing oled substrate provided by the invention；
Figure 10 (a)~Figure 10 (c) is a kind of process schematic three for preparing oled substrate provided by the invention；
Figure 11 is a kind of flow diagram of the control method of oled substrate provided by the invention.
Appended drawing reference:
10- substrate；20- first transparency electrode；30- pixel defining layer；31- first is open；32- second is open；40- first
Organic material functional layer；50- opaque electrode layer；51- first part；60- the second organic material functional layer；70- second is transparent
Electrode layer；The first pixel defining layer of 33-；The second pixel defining layer of 34-；311- third opening；The 4th son opening of 312-；321-
First son opening；322- the second son opening.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
The embodiment of the present invention provides a kind of oled substrate, as shown in Figs. 1-3, comprising: substrate 10；Be set on substrate 10 and
Positioned at the first transparency electrode 20 of each subpixel area；The pixel defining layer 30 being set on substrate 10, the pixel defining layer
30 include the first opening 31 and the second opening 32；First opening 31 and the second opening 32 are located at different subpixel areas；Setting
The first organic material functional layer 40 in the first opening 31；It is set in pixel defining layer 30 and all subpixel areas
Opaque electrode layer 50；Wherein, under the action of pixel defining layer 30, opaque electrode layer 50 is divided into first part 51 and second
It (is not identified in figure) partially, first part 51 and second part disconnect, and first part 51 is located in the second opening 32；At least it is arranged
The second organic material functional layer 60 in the second opening 32；It is set in pixel defining layer 30 and all subpixel areas
Second transparency electrode layer 70, second transparency electrode layer 70 electrically connect as one.
Based on above-mentioned oled substrate, it is to be understood that in the first 31 regions of opening, first transparency electrode 20, first
Organic material functional layer 40, opaque electrode layer 50, second transparency electrode layer 70 are set in turn on substrate 10.
Wherein, it when the second organic material functional layer 60 is only arranged in the second opening 32, is open 31 regions first, the
Two transparent electrode layers 70 and opaque electrode layer 50 directly contact.In the case, in the first 31 regions of opening, the first transparent electricity
Pole 20 can be used as transparent anode, and opaque electrode layer 50 and second transparency electrode layer 70 can be used as opaque cathode, thus
Realize that bottom shines in one 31 regions of opening.Wherein, 70 equipotential of opaque electrode layer 50 and second transparency electrode layer can be made.
When the second organic material functional layer 60 is not only arranged in the second opening 32, it is also provided at 31 region of the first opening
When, in the first 31 regions of opening, by the second organic material functional layer between second transparency electrode layer 70 and opaque electrode layer 50
60 isolation.In the case, in the first 31 regions of opening, first transparency electrode 20 can be used as anode, and opaque electrode layer 50 can
As cathode, to realize that bottom shines in the first 31 regions of opening.Wherein, opaque electrode layer 50 and second transparency electrode can be made
70 equipotential of layer so that be open 31 regions first, even if opaque electrode layer 50 and second transparency electrode layer 70 it
Between there are the second organic material functional layer 60, will not shine.
In the second 32 regions of opening, first transparency electrode 20, the first part 51 of opaque electrode layer 50, second organic material
Material functional layer 60, second transparency electrode layer 70 are set in turn on substrate 10, and first transparency electrode 20 and opaque electrode layer
50 first part 51 directly contacts and is electrically connected.
In the case, in the second 32 regions of opening, the first part of first transparency electrode 20 and opaque electrode layer 50
51 can be used as opaque anode, and second transparency electrode layer 70 is used as transparent cathode, to realize top hair in the second 32 regions of opening
Light.Wherein, in the embodiment of the present invention, by the effect of pixel defining layer 30, opaque electrode layer 50 is made to be located at the second opening 32
In first part 51 be located at other regions second part disconnect, it is therefore intended that by first transparency electrode 20 and second thoroughly
The control of voltage on prescribed electrode layer 70, to control top luminous intensity.
It should be noted that first, due to realizing that bottom shines in the first 31 regions of opening, top is realized in the second 32 regions of opening
It shines, therefore, to guarantee to show quality, when forming pixel defining layer 30, the first opening 31 and the second opening 32 should uniformly divide
Cloth, specifically without limitation.
For example, the first opening 31 can be formed in odd column sub-pixel region, in even column sub-pixel region, the is formed
Two openings 32；Alternatively, forming the first opening 31 in odd rows region, in even number line subpixel area, forms second and open
Mouth 32；Alternatively, keeping the first opening 31 only adjacent with the second opening 32, the second opening 32 is only adjacent with the first opening 31.
Second, the specific structure of pixel defining layer 30 is not defined, as long as leading to when forming opaque electrode layer 50
Cross the structure of pixel defining layer 30, and unspecific patterning process, opaque electrode layer 50 can be made to be located at the second opening 32
In first part 51 be located at other regions second part disconnect.
Wherein it is possible to understand, first part 51 is multiple, 32 one-to-one correspondence of first part 51 and the second opening.
Third, the first organic material functional layer 40 may include luminescent layer, hole transmission layer, electron transfer layer, further
It may also include hole injection layer and electron injecting layer.
Second organic material functional layer 60 may include luminescent layer, hole transmission layer, electron transfer layer, further can also wrap
Include hole injection layer and electron injecting layer.
The structure of first organic material functional layer 40 and the second organic material functional layer 60 can be identical, can also be different.
The embodiment of the present invention provides a kind of oled substrate, by the design of pixel defining layer 30, is forming opaque electrode
When layer 50, opaque electrode layer 50 is set to be divided into first part 51 and second part, and first part 51 and second part disconnect, the
A part 51 is located in the second opening 32, to be open 32 regions second, make the first part 51 of opaque electrode layer 50 with
First transparency electrode 20 is electrically connected and equipotential, collectively as anode, and under the action of second transparency electrode layer 70, realizes top
It shines；In the first 31 regions of opening, realize that bottom shines under the action of first transparency electrode 20 and opaque electrode layer 50, and push up
Shining to shine the bottom of with can be controlled separately.Wherein, when forming opaque electrode layer 50, due to passing through the knot of pixel defining layer 30
The purpose for disconnecting first part 51 and second part can be realized in structure, therefore, can without FMM (precision metallic mask),
When to can avoid evaporation metal material, the problem of FMM tapping is easy to happen blocking, FMM more difficult cleaning, and then can be improved
The production of OLED lighting at two sides display.
Optionally, as shown in figure 4, the shape of the first opening 31 and the second opening 32 is in halfpace；First opening 31 it is upper
Surface area is greater than its lower surface area；The upper surface area of second opening 32 is less than its lower surface area；Upper surface is far from base
Plate 10, lower surface is close to substrate 10.
That is, the shape of the first opening 31 is in inverted trapezoidal, the shape of the second opening 32 is in positive halfpace.
Optionally, as shown in Figure 5 and Figure 6, the second opening 32 includes the first son opening 321 and the second son opening of stacking
322, the upper surface of the first son opening 321 and the lower surface of the second son opening 322 share；First son opening 321 and the second son are opened
Mouth 322 is in halfpace, and the upper surface area of the first son opening 321 is greater than its lower surface area, the upper table of the second sub- opening 322
Face area is less than its lower surface area.
Further, as shown in Figure 5 and Figure 6, the first opening 31 includes third opening 311 and the 4th son opening 312, the
The upper surface of three son openings 311 is a part of the lower surface of the 4th son opening 312；Third opening 311 and the 4th son opening
312 be in halfpace, and the upper surface area of third opening 311 is greater than its lower surface area, the upper surface of the 4th son opening 312
Area is less than its lower surface area.
Wherein, as shown in Figure 5 and Figure 6, pixel defining layer 30 can be at least double-layer structure.That is, as shown in figure 5, pixel
Defining layer 30 may include the first pixel defining layer 33 and is set to second picture of first pixel defining layer 33 far from 10 side of substrate
Element defines layer 34.So as to which the shape of the first required opening 31 and the second opening 32 is easier prepared.
Wherein, the thickness of the first pixel defining layer 33 can be in 0.2~1.5 μ m；Second pixel defining layer 34
Thickness can be in 0.2~1.5 μ m.
For the first pixel defining layer 33, as shown in fig. 6, it can also include that the first sub-pixel defines layer 331 and second
Sub-pixel defines layer 332；First sub-pixel defines layer 331 and the second sub-pixel defines layer 332 along 10 plane of substrate side by side and phase
Neighbour's setting.First sub-pixel defines layer 331 and the second sub-pixel define layer 332 height it is equal.
Wherein, the structure of pixel defining layer 30 relatively shown in fig. 5, the structure of pixel defining layer 30 shown in fig. 6 are more held
Formation easy to manufacture.
On the basis of the above-mentioned description to oled substrate, to guarantee that second is transparent when forming second transparency electrode layer 70
Electrode layer 70 does not disconnect, and 70 thickness of second transparency electrode layer can be arranged within the scope of 50~10000nm.
For opaque electrode layer 50, thickness can be within the scope of 20nm~300nm, guarantee be lighttight simultaneously, can
Disconnect the second part in its first part 51 in the second opening 32 and other regions.
Wherein, the material of opaque electrode layer 50 can be selected from the metals such as Al (aluminium), Ag (silver), Mg:Ag (magnesium silver alloy).
First transparency electrode 20, second transparency electrode layer 70 material can be selected from ITO (tin indium oxide), IZO (indium oxide
Zinc) etc..
Optionally, the substrate 10 includes substrate, the thin film transistor (TFT) and flatness layer being set on substrate.Wherein, it puts down
The material of smooth layer can be identical as the material of pixel defining layer 30, or the materials such as resin, silicon nitride.
It is understood that first transparency electrode 20 is connect with thin film transistor (TFT), so that oled substrate of the invention
It is driven based on active.
The embodiment of the present invention also provides a kind of preparation method of oled substrate, as shown in fig. 7, comprises following steps:
S11, as Figure 4-Figure 6, each subpixel area formation first transparency electrode 20 on the substrate 10.
It is exemplary, it can be by depositing transparent conductive material, and pass through photoetching process, first transparency electrode 20 is prepared.
S12, as Figure 4-Figure 6, formation pixel defining layer 30, pixel defining layer 30 include the first opening 31 and the second opening
32；First opening 31 and the second opening 32 are located at different subpixel areas.
Wherein, pixel defining layer 30 can be one layer of structure, and structure for example, as shown in figure 4 can be used in the case
One time photoetching process is formed.
Pixel defining layer 30 or at least double-layer structure, that is, as shown in figure 5, pixel defining layer 30 may include first
Pixel defining layer 33 and it is set to second pixel defining layer 34 of first pixel defining layer 33 far from 10 side of substrate, in this situation
Under, Twi-lithography technique can be used and formed.
Wherein, the thickness of the first pixel defining layer 33 can be in 0.2~1.5 μ m；Second pixel defining layer 34
Thickness can be in 0.2~1.5 μ m.
For the first pixel defining layer 33, as shown in fig. 6, it can also include that the first sub-pixel defines layer 331 and second
Sub-pixel defines layer 332；First sub-pixel defines layer 331 and the second sub-pixel defines layer 332 along 10 plane of substrate side by side and phase
Neighbour's setting.First sub-pixel defines layer 331 and the second sub-pixel define layer 332 height it is equal.In the case, three be can be used
Secondary photoetching process is formed.
S13, such as Fig. 8 (a), Fig. 9 (a), Figure 10 (a) are shown, form the first organic material functional layer in the first opening 31
40。
It is exemplary, inkjet printing can be jetted through or hot evaporation mode forms the first organic material functional layer 40.Wherein, work as use
When hot evaporation mode forms the first organic material functional layer 40, precision mask plate need to be used.
S14, such as Fig. 8 (b), Fig. 9 (b), shown in Figure 10 (b), in pixel defining layer 30 and all subpixel area shapes
At opaque electrode layer 50；Wherein, under the action of pixel defining layer 30, opaque electrode layer 50 is divided into first part 51 and
Two parts (do not identify) in figure, and first part 51 and second part disconnect, and first part 51 is located in the second opening 32.
It is exemplary, hot evaporation mode can be used or sputter coating mode forms opaque electrode layer 50.Wherein, when using heat
When vapor deposition mode forms opaque electrode layer 50, open mask plate can be used.
The thickness of opaque electrode layer 50 can be within the scope of 20nm~300nm
S15, such as Fig. 8 (c), Fig. 9 (c), Figure 10 (c) are shown, the second organic material functional layer at least in the second opening 32
60。
It is exemplary, inkjet printing can be jetted through or hot evaporation mode forms the second organic material functional layer 60.Wherein, work as use
When hot evaporation mode forms the second organic material functional layer 60, precision mask plate need to be used.
S16, with reference to shown in Fig. 3, Fig. 2, Fig. 1, in pixel defining layer 30 and all subpixel areas formed second thoroughly
Prescribed electrode layer 70, second transparency electrode layer 70 electrically connect as one.
It is exemplary, hot evaporation mode can be used or sputter coating mode forms second transparency electrode layer 70.Wherein, work as use
When hot evaporation mode forms second transparency electrode layer 70, open mask plate can be used.
It, can be by second thoroughly to guarantee that second transparency electrode layer 70 does not disconnect when forming second transparency electrode layer 70
70 thickness of prescribed electrode layer is arranged within the scope of 50~10000nm.
It should be noted that first, due to realizing that bottom shines in the first 31 regions of opening, top is realized in the second 32 regions of opening
It shines, therefore, to guarantee to show quality, when forming pixel defining layer 30, the first opening 31 and the second opening 32 should uniformly divide
Cloth, specifically without limitation.
For example, the first opening 31 can be formed in odd column sub-pixel region, in even column sub-pixel region, the is formed
Two openings 32；Alternatively, forming the first opening 31 in odd rows region, in even number line subpixel area, forms second and open
Mouth 32；Alternatively, keeping the first opening 31 only adjacent with the second opening 32, the second opening 32 is only adjacent with the first opening 31.
Second, the specific structure of pixel defining layer 30 is not defined, as long as leading to when forming opaque electrode layer 50
Cross the structure of pixel defining layer 30, and unspecific patterning process, opaque electrode layer 50 can be made to be located at the second opening 32
In first part 51 be located at other regions second part disconnect.
Wherein it is possible to understand, first part 51 is multiple, 32 one-to-one correspondence of first part 51 and the second opening.
Third, the first organic material functional layer 40 may include luminescent layer, hole transmission layer, electron transfer layer, further
It may also include hole injection layer and electron injecting layer.
Second organic material functional layer 60 may include luminescent layer, hole transmission layer, electron transfer layer, further can also wrap
Include hole injection layer and electron injecting layer.
The structure of first organic material functional layer 40 and the second organic material functional layer 60 can be identical, can also be different.
The embodiment of the present invention provides a kind of preparation method of oled substrate, by the design of pixel defining layer 30, is being formed
When opaque electrode layer 50, opaque electrode layer 50 is made to be divided into first part 51 and second part, and first part 51 and second
Part disconnects, and first part 51 is located in the second opening 32, to be open 32 regions second, makes the of opaque electrode layer 50
A part 51 is electrically connected and equipotential with first transparency electrode 20, collectively as anode, and in the work of second transparency electrode layer 70
Under, realize that top shines；In the first 31 regions of opening, realized under the action of first transparency electrode 20 and opaque electrode layer 50
Bottom shines, and pushes up to shine to shine the bottom of with and can be controlled separately.Wherein, when forming opaque electrode layer 50, due to passing through pixel circle
The purpose for disconnecting first part 51 and second part can be realized in the structure of given layer 30, therefore, can without FMM, thus
When can avoid evaporation metal material, the problem of FMM tapping is easy to happen blocking, FMM more difficult cleaning, and then OLED two can be improved
The production of surface light-emitting display.
The embodiment of the present invention also provides a kind of control method of above-mentioned oled substrate, as shown in figure 11, comprising:
S21, apply first voltage to first transparency electrode 21.
S22, apply second part from second voltage to opaque electrode layer 50 and second transparency electrode layer 70.
Based on this, single side light emitting-type oled substrate is compared, it may be unnecessary to increase additional control, implement simpler.
The above description is merely a specific embodiment, but scope of protection of the present invention is not limited thereto, any
Those familiar with the art in the technical scope disclosed by the present invention, can easily think of the change or the replacement, and should all contain
Lid is within protection scope of the present invention.Therefore, protection scope of the present invention should be based on the protection scope of the described claims.
Claims (10)
1. a kind of oled substrate characterized by comprising
Substrate；
It is set on the substrate and is located at the first transparency electrode of each subpixel area；
The pixel defining layer being set on the substrate, the pixel defining layer include the first opening and the second opening；Described
One opening and second opening are located at different subpixel areas；
The first organic material functional layer being set in first opening；
It is set in the pixel defining layer and the opaque electrode layer of all subpixel areas；Wherein, in pixel circle
Under the action of given layer, the opaque electrode layer is divided into first part and second part, and first part and second part disconnect, the
A part is located in second opening；
The second organic material functional layer being at least set in second opening；
It is set in the pixel defining layer and the second transparency electrode layer of all subpixel areas, the second transparency electrode
Layer electrically connects as one.
2. oled substrate according to claim 1, which is characterized in that the shape of first opening and second opening
It is in halfpace；
The upper surface area of first opening is greater than its lower surface area；The upper surface area of second opening is less than under it
Surface area；Upper surface is far from the substrate, and lower surface is close to the substrate.
3. oled substrate according to claim 1, which is characterized in that second opening includes the first son opening of stacking
With the second son opening, the lower surface of the upper surface of the first son opening and the second son opening is shared；
The first son opening and the second son opening are in halfpace, and the upper surface area of the first son opening is greater than it
The upper surface area of lower surface area, the second son opening is less than its lower surface area.
4. oled substrate according to claim 3, which is characterized in that first opening includes third opening and the 4th
Son opening, the upper surface of the third opening are a part of the lower surface of the 4th son opening；The third opening
It is in halfpace with the 4th son opening, and the upper surface area of third opening is greater than its lower surface area, described the
The upper surface area of four son openings is less than its lower surface area.
5. oled substrate according to claim 3, which is characterized in that the pixel defining layer is at least double-layer structure.
6. oled substrate according to claim 1, which is characterized in that the second transparency electrode thickness degree 50~
Within the scope of 10000nm.
7. oled substrate according to claim 1-6, which is characterized in that the substrate includes substrate, is set to
Thin film transistor (TFT) and flatness layer on the substrate.
8. a kind of preparation method of oled substrate characterized by comprising
Each subpixel area on substrate forms first transparency electrode；
Pixel defining layer is formed, the pixel defining layer includes the first opening and the second opening；First opening and described the
Two openings are located at different subpixel areas；
The first organic material functional layer is formed in first opening；
In the pixel defining layer and all subpixel areas form opaque electrode layer；Wherein, it is defined in the pixel
Under the action of layer, the opaque electrode layer is divided into first part and second part, and first part and second part disconnect, and first
Part is located in second opening；
At least the second organic material functional layer is formed in second opening；
In the pixel defining layer and all subpixel areas form second transparency electrode layer, the second transparency electrode layer
Electrically connect as one.
9. preparation method according to claim 8, which is characterized in that
The first organic material functional layer, institute are formed by inkjet printing mode or in the way of the hot evaporation of precision mask plate
State the second organic material functional layer；
The opaque electrode layer, described second are formed by sputter coating mode or in the way of the hot evaporation of open mask plate
Transparent electrode layer.
10. a kind of control method of such as described in any item oled substrates of claim 1-7 characterized by comprising
Apply first voltage to first transparency electrode；
Apply second part from second voltage to opaque electrode layer and second transparency electrode layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810377368.8A CN108565347B (en) | 2018-04-24 | 2018-04-24 | A kind of oled substrate and preparation method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810377368.8A CN108565347B (en) | 2018-04-24 | 2018-04-24 | A kind of oled substrate and preparation method thereof |
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| Publication Number | Publication Date |
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| CN113078270A (en) * | 2020-01-06 | 2021-07-06 | 京东方科技集团股份有限公司 | Organic electroluminescent structure, manufacturing method thereof and display device |
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| CN103094312A (en) * | 2013-01-11 | 2013-05-08 | 京东方科技集团股份有限公司 | Organic luminous display panel |
| CN104765157A (en) * | 2015-05-06 | 2015-07-08 | 京东方科技集团股份有限公司 | Display panel and display method and display device thereof |
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| CN104765157A (en) * | 2015-05-06 | 2015-07-08 | 京东方科技集团股份有限公司 | Display panel and display method and display device thereof |
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