CN106783768A - 一种预成型纳米银膜 - Google Patents
一种预成型纳米银膜 Download PDFInfo
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- QZCLKYGREBVARF-UHFFFAOYSA-N Acetyl tributyl citrate Chemical compound CCCCOC(=O)CC(C(=O)OCCCC)(OC(C)=O)CC(=O)OCCCC QZCLKYGREBVARF-UHFFFAOYSA-N 0.000 claims description 2
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- JIGUQPWFLRLWPJ-UHFFFAOYSA-N Ethyl acrylate Chemical compound CCOC(=O)C=C JIGUQPWFLRLWPJ-UHFFFAOYSA-N 0.000 claims description 2
- 229920000305 Nylon 6,10 Polymers 0.000 claims description 2
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 claims description 2
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 claims description 2
- IAXXETNIOYFMLW-COPLHBTASA-N [(1s,3s,4s)-4,7,7-trimethyl-3-bicyclo[2.2.1]heptanyl] 2-methylprop-2-enoate Chemical compound C1C[C@]2(C)[C@@H](OC(=O)C(=C)C)C[C@H]1C2(C)C IAXXETNIOYFMLW-COPLHBTASA-N 0.000 claims description 2
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- XNGIFLGASWRNHJ-UHFFFAOYSA-L phthalate(2-) Chemical compound [O-]C(=O)C1=CC=CC=C1C([O-])=O XNGIFLGASWRNHJ-UHFFFAOYSA-L 0.000 claims description 2
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- WEAPVABOECTMGR-UHFFFAOYSA-N triethyl 2-acetyloxypropane-1,2,3-tricarboxylate Chemical compound CCOC(=O)CC(C(=O)OCC)(OC(C)=O)CC(=O)OCC WEAPVABOECTMGR-UHFFFAOYSA-N 0.000 claims description 2
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- MTVUDFBYBPMGMR-UHFFFAOYSA-N 1-ethyl-2-propylhydrazine Chemical compound CCCNNCC MTVUDFBYBPMGMR-UHFFFAOYSA-N 0.000 claims 1
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 claims 1
- DXPPIEDUBFUSEZ-UHFFFAOYSA-N 6-methylheptyl prop-2-enoate Chemical group CC(C)CCCCCOC(=O)C=C DXPPIEDUBFUSEZ-UHFFFAOYSA-N 0.000 claims 1
- 244000248349 Citrus limon Species 0.000 claims 1
- 235000005979 Citrus limon Nutrition 0.000 claims 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims 1
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- DOOTYTYQINUNNV-UHFFFAOYSA-N Triethyl citrate Chemical compound CCOC(=O)CC(O)(C(=O)OCC)CC(=O)OCC DOOTYTYQINUNNV-UHFFFAOYSA-N 0.000 claims 1
- 125000000218 acetic acid group Chemical group C(C)(=O)* 0.000 claims 1
- RRAMGCGOFNQTLD-UHFFFAOYSA-N hexamethylene diisocyanate Chemical compound O=C=NCCCCCCN=C=O RRAMGCGOFNQTLD-UHFFFAOYSA-N 0.000 claims 1
- FJKROLUGYXJWQN-UHFFFAOYSA-N papa-hydroxy-benzoic acid Natural products OC(=O)C1=CC=C(O)C=C1 FJKROLUGYXJWQN-UHFFFAOYSA-N 0.000 claims 1
- 229960004889 salicylic acid Drugs 0.000 claims 1
- 239000001069 triethyl citrate Substances 0.000 claims 1
- VMYFZRTXGLUXMZ-UHFFFAOYSA-N triethyl citrate Natural products CCOC(=O)C(O)(C(=O)OCC)C(=O)OCC VMYFZRTXGLUXMZ-UHFFFAOYSA-N 0.000 claims 1
- 235000013769 triethyl citrate Nutrition 0.000 claims 1
- 238000003466 welding Methods 0.000 abstract description 12
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 8
- 229910052802 copper Inorganic materials 0.000 abstract description 8
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- 125000004836 hexamethylene group Chemical group [H]C([H])([*:2])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[*:1] 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/492—Bases or plates or solder therefor
- H01L23/4924—Bases or plates or solder therefor characterised by the materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4871—Bases, plates or heatsinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3736—Metallic materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3737—Organic materials with or without a thermoconductive filler
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
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- Crystallography & Structural Chemistry (AREA)
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- Powder Metallurgy (AREA)
Abstract
本发明涉及电子封装用预成型焊料技术领域,具体公开了一种预成型纳米银膜,其各组成成份及质量百分含量为:纳米银粉60‑90%,成膜剂5‑15%,分散剂1‑5%,增塑剂1‑5%,粘度调节剂1‑5%,缓蚀剂1‑5%,助焊剂1‑5%;所述预成型纳米银膜采用流延法来进行制备。本发明的纳米银膜可实现预成型和低温烧结,使用方便高效,且在裸铜表面能够实现大面积的直接焊接、焊后焊料层具有导热系数高和空洞率低等特点,尤其适用于大功率器件等高可靠性电子封装。
Description
技术领域
本发明涉及电子封装用预成型焊料技术领域,具体涉及一种预成型纳米银膜。
背景技术
众所周知,焊料是电子组装中的重要组成部分,承担着电气连接、机械固定和散热通道的作用。随着电力电子技术向着高频、高压、大电流和集成化的方向发展,现有的Sn基合金焊料(包括预成型焊片形式)已逐渐不能满足大功率器件封装系统散热和高温条件应用的要求。纳米银焊膏由于金属银的高热导性,能在一定程度上缓解散热问题,但因为纳米银焊膏自身在存储和使用过程中存在不便,使其应用范围受到较大限制。另外,纳米银焊膏不能实现大面积焊接,焊接后的空洞率也较高,而且一般都需要在被焊接的表面上镀银。这些缺点和不足也进一步限制了纳米银焊膏在大功率器件封装中的推广和应用。
发明内容
有鉴于此,有必要针对上述的问题,提供一种可实现预成型和低温烧结,使用方便高效,且在裸铜表面能够实现大面积的直接焊接、焊后焊料层具有导热系数高和空洞率低等特点的预成型纳米银膜。
为实现上述目的,本发明采取以下的技术方案:
本发明的预成型纳米银膜,其各组成成份及质量百分含量为:纳米银粉60-90%,成膜剂5-15%,分散剂1-5%,增塑剂1-5%,粘度调节剂1-5%,缓蚀剂1-5%,助焊剂1-5%。
作为优选的,所述纳米银粉的平均粒径为10-1000nm。
作为优选的,所述成膜剂包括聚乙烯醇、聚乙烯吡咯烷酮、聚乙烯醇缩丁醛和树脂型有机粘合剂中的至少一种。
作为优选的,所述分散剂包括聚乙烯亚胺、聚丙烯酰胺、异丁醇胺和脂肪酸甘油酯中的至少一种。
作为优选的,所述增塑剂包括丙二醇、丁二醇、聚乙二醇、甘油、油酸丁酯、柠檬酸三乙酯、柠檬酸三丁酯、乙酰柠檬酸三乙酯、乙酰柠檬酸三丁酯和邻苯二甲酸酯类中的至少一种。
作为优选的,所述粘度调节剂包括丙烯酸甲酯、丙烯酸乙酯、丙烯酸丁酯、丙烯酸异辛酯、丙烯酸异冰片酯、甲基丙烯酸异冰片酯、甲基丙烯酸十八烷基酯、六亚甲基二异氰酸酯、三甲基六亚甲基二异氰酸酯和异氰脲酸三烯丙酯中的至少一种。
作为优选的,所述缓蚀剂包括多巴胺、3-二乙胺基丙胺、吗啡啉、肼类化合物、肟类化合物、咪唑类化合物和氨基酸类化合物中的至少一种。
作为优选的,所述助焊剂包括松香、丁二酸、己二酸、癸二酸、乳酸、酒石酸、水杨酸、苯酚、对叔丁基苯酚、邻苯二酚中的至少一种。
本发明中的预成型纳米银膜采用流延法来进行制备,具体步骤包括:物料混合→真空脱泡→流延成膜→干燥固化→后处理。
本发明的有益效果为:
与现有技术相比,本发明的预成型纳米银膜在焊接过程中具有低温烧结、高温服役的特点,烧结后的焊接银层热导率大于200W/mK、剪切强度大于50W/mK、空洞率小于2%;更重要的是,被焊接面无需经过镀层处理,预成型纳米银膜能够大面积地直接焊接在裸铜表面,焊接后具有免清洗、可靠性高和热循环寿命长的优点,有效地解决了散热难的问题。
本发明的纳米银膜可实现预成型,即可以根据实际要求切成片状或以卷带的形式包装,使用起来方便,尤其适用于大功率器件等高可靠性电子封装。
具体实施方式
为使本发明的目的、技术方案和优点更加清楚,下面将结合本发明实施例,对本发明的技术方案作进一步清楚、完整地描述。需要说明的是,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。
实施例1
本发明的预成型纳米银膜,其各组成及质量百分含量如下:
所述预成型纳米银膜的制备方法为流延法,具体步骤包括:
(1)物料混合:先将纳米银粉(平均粒径为20nm)8g与丙酮(溶剂)50g混合,然后依次加入多巴胺(缓蚀剂)0.2g、松香(助焊剂)0.1g、聚乙烯亚胺(分散剂)0.1g、聚乙烯醇(成膜剂)1.2g、丙二醇(增塑剂)0.1g和丙烯酸甲酯(粘度调节剂)0.3g,每一种组成添加后都需在功率为600W的超声波中搅拌30min,直至形成均匀的浆料;
(2)真空脱泡:将浆料置于真空度为-0.08MPa的条件下进行脱泡20min。
(3)流延成膜:用流延机将浆料均匀铺展成一定厚度的湿膜,流延高度为0.80mm,流延速度为0.50m/min。
(4)干燥固化:在温度为40℃的条件下进行干燥固化,固化后膜厚为0.10mm。
(5)后处理:整平处理并裁切成10mm×10mm的方形薄膜。
将上述预成型纳米银膜用低温烧结工艺直接焊接在铜板上,烧结焊接的条件为:温度280℃,压力10MPa,烧结时间30min。焊后烧结银焊层的导热系数高达240-250W/mK,空洞率为0.4-0.6%,剪切强度为60-65MPa。
实施例2
本发明的预成型纳米银膜,其各组成及质量百分含量如下:
所述预成型纳米银膜的制备方法为流延法,具体步骤与实施例1相同。
将上述预成型纳米银膜用低温烧结工艺直接焊接在铜板上,烧结焊接的条件为:温度280℃,压力10MPa,烧结时间30min。焊后烧结银焊层的导热系数高达220-230W/mK,空洞率为0.8-1.0%,剪切强度为55-60MPa。
实施例3
一种预成型纳米银膜,其各组成及质量百分含量如下:
所述预成型纳米银膜的制备方法为流延法,将实施例1中步骤(1)替换为:先将纳米银粉(平均粒径为1000nm)8g与丙酮(溶剂)50g混合,然后依次加入聚丙烯酰胺(分散剂)0.1g、聚乙烯醇缩丁醛(成膜剂)1.4g、聚乙二醇(增塑剂)0.1g、丙烯酸丁酯(粘度调节剂)0.1g、吗啡啉(缓蚀剂)0.2g和乳酸(助焊剂)0.1g,每一种组成添加后都需在功率为600W的超声波中搅拌30min,直至形成均匀的浆料;其余步骤与实施例1相同。
将上述预成型纳米银膜用低温烧结工艺直接焊接在铜板上,烧结焊接的条件为:温度280℃,压力10MPa,烧结时间30min。焊后烧结银焊层的导热系数高达205-215W/mK,空洞率为1.8-2.0%,剪切强度为50-55MPa。
对比例1
将市售纳米银焊膏产品在铜板上涂覆为长×宽×厚=4mm×4mm×0.1mm的方形薄膜,然后用低温烧结工艺进行焊接,烧结焊接的条件与实施例1-3相同。焊后烧结银焊层的导热系数为220-230W/mK,空洞率为1.8-2.0%,剪切强度为35-40MPa。
对比例2
将市售纳米银焊膏产品在铜板上涂覆为长×宽×厚=10mm×10mm×0.1mm的方形薄膜,然后用低温烧结工艺进行焊接,烧结焊接的条件与实施例1-3相同。焊后烧结银焊层的导热系数为130-140W/mK,空洞率为4-6%,剪切强度为20-30MPa。
以上所述实施例仅表达了本发明的几种实施方式,其描述较为具体和详细,但并不能因此而理解为对本发明专利范围的限制。应当指出的是,对于本领域的普通技术人员来说,在不脱离本发明构思的前提下,还可以做出若干变形和改进,这些都属于本发明的保护范围。因此,本发明专利的保护范围应以所附权利要求为准。
Claims (9)
1.一种预成型纳米银膜,其特征在于,各组成成份及质量百分含量为:纳米银粉60-90%,成膜剂5-15%,分散剂1-5%,增塑剂1-5%,粘度调节剂1-5%,缓蚀剂1-5%,助焊剂1-5%。
2.根据权利要求1所述的预成型纳米银膜,其特征在于,所述纳米银粉的平均粒径为10-1000nm。
3.根据权利要求1所述的预成型纳米银膜,其特征在于,所述成膜剂包括聚乙烯醇、聚乙烯吡咯烷酮、聚乙烯醇缩丁醛和树脂型有机粘合剂中的至少一种。
4.根据权利要求1所述的预成型纳米银膜,其特征在于,所述分散剂包括聚乙烯亚胺、聚丙烯酰胺、异丁醇胺和脂肪酸甘油酯中的至少一种。
5.根据权利要求1所述的预成型纳米银膜,其特征在于,所述增塑剂包括丙二醇、丁二醇、聚乙二醇、甘油、油酸丁酯、柠檬酸三乙酯、柠檬酸三丁酯、乙酰柠檬酸三乙酯、乙酰柠檬酸三丁酯和邻苯二甲酸酯类中的至少一种。
6.根据权利要求1所述的预成型纳米银膜,其特征在于,所述粘度调节剂包括丙烯酸甲酯、丙烯酸乙酯、丙烯酸丁酯、丙烯酸异辛酯、丙烯酸异冰片酯、甲基丙烯酸异冰片酯、甲基丙烯酸十八烷基酯、六亚甲基二异氰酸酯、三甲基六亚甲基二异氰酸酯和异氰脲酸三烯丙酯中的至少一种。
7.根据权利要求1所述的预成型纳米银膜,其特征在于,所述缓蚀剂包括多巴胺、3-二乙胺基丙胺、吗啡啉、肼类化合物、肟类化合物、咪唑类化合物和氨基酸类化合物中的至少一种。
8.根据权利要求1所述的预成型纳米银膜,其特征在于,所述助焊剂包括松香、丁二酸、己二酸、癸二酸、乳酸、酒石酸、水杨酸、苯酚、对叔丁基苯酚、邻苯二酚中的至少一种。
9.一种权利要求1-8任意一项所述的预成型纳米银膜的制备方法,其特征在于,所述制备方法为流延法。
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