CN106783604B - AlAs-Ge-AlAs结构的基固态等离子体PiN二极管及其制备方法 - Google Patents
AlAs-Ge-AlAs结构的基固态等离子体PiN二极管及其制备方法 Download PDFInfo
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- CN106783604B CN106783604B CN201611188557.8A CN201611188557A CN106783604B CN 106783604 B CN106783604 B CN 106783604B CN 201611188557 A CN201611188557 A CN 201611188557A CN 106783604 B CN106783604 B CN 106783604B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/868—PIN diodes
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
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- Manufacturing & Machinery (AREA)
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CN201611188557.8A CN106783604B (zh) | 2016-12-20 | 2016-12-20 | AlAs-Ge-AlAs结构的基固态等离子体PiN二极管及其制备方法 |
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CN201611188557.8A CN106783604B (zh) | 2016-12-20 | 2016-12-20 | AlAs-Ge-AlAs结构的基固态等离子体PiN二极管及其制备方法 |
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CN106783604A CN106783604A (zh) | 2017-05-31 |
CN106783604B true CN106783604B (zh) | 2020-06-09 |
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CN113299765B (zh) * | 2021-02-07 | 2023-12-01 | 中国人民武装警察部队工程大学 | 具有台面结构的异质GeSn基固态等离子体PiN二极管阵列的制备方法及其器件 |
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US6943409B1 (en) * | 2004-05-24 | 2005-09-13 | International Business Machines Corporation | Trench optical device |
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US6943409B1 (en) * | 2004-05-24 | 2005-09-13 | International Business Machines Corporation | Trench optical device |
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