CN106756843A - 一种防静电干扰层的制备方法 - Google Patents

一种防静电干扰层的制备方法 Download PDF

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CN106756843A
CN106756843A CN201611182305.4A CN201611182305A CN106756843A CN 106756843 A CN106756843 A CN 106756843A CN 201611182305 A CN201611182305 A CN 201611182305A CN 106756843 A CN106756843 A CN 106756843A
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王旭
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HARTEC TECHNOLOGY (KUNSHAN) Co Ltd
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    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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Abstract

本发明公开了一种防静电干扰层的制备方法,主要应用于内嵌式触控屏领域,用以提升触控灵敏度及显示效果。所采用的技术手段主要是:该防静电干扰层材料为氧化温度高于800℃的高透光复合陶瓷材料,采取的镀膜方法为真空磁控溅射镀膜。解决了防静电干扰材料经信耐性测试后表面电阻超出规格,薄膜脱落,进而完全失效的问题。

Description

一种防静电干扰层的制备方法
技术领域
本发明涉及一种防静电干扰层的制备方法,以及一种在玻璃表面镀膜的方法,该薄膜材料主要应用于内嵌式触控屏(In Cell Touch)领域,用以提升触控灵敏度及显示效果。
背景技术
触控屏依工作原理,可分为三个单元:液晶显示面板单元、感应触控面板单元以及保护玻璃盖板单元。传统触控屏生产技术中,显示面板与触控面板先分开生产,再通过光学胶将二者贴合在一起(OGS工艺),为防止显示面板与触控面板间的电磁干扰,通常在显示面板表面镀透明导电膜,优选材料为氧化铟锡(ITO)。由于触控面板与显示面板空间分离,且对贴合工艺要求极高,因此OGS触控屏存在厚度大、透光率差、画面畸变等问题。而内嵌式触控屏(In Cell Touch)采用将感应触控功能内嵌于液晶显示面板内,即在显示面板内部嵌入触控传感器功能,由于减少2片玻璃,可大幅降低触控屏厚度、提升显示效果,是未来触控屏发展的一个重要方向。
但是,将触控功能与显示面板整合在一起,二者电路空间结构过近,触控感应电路所积累静电荷无法有效转移,造成严重的静电干扰,表现为触控精度变差、显示画面畸变、色彩漂移等问题。因此,需要制作高方阻的防静电干扰层,用以释放静电,该防静电干扰层通常选择在彩色滤光阵列(CF)侧,玻璃外表面。现有薄膜材料面临的主要问题是:薄膜时效性差,常温放置1~2月后,表面电阻值超出规定范围;经信耐性测试(高温高湿测试、高温储藏测试等)后,表面电阻波动较大,超出规定范围。
发明内容
目的:为了克服现有技术中存在的不足,解决抗指纹薄膜与阳极氧化后铝合金表面附着力差的问题,经分析得出其根本原因是:抗指纹材料分子链段极性弱,与铝合金基体间范德华力小,无法形成强的物理键合。并且,材料本身化学性质稳定,不与基材发生化学反应,不存在化学键合,因此无法浸润阳极氧化后铝合金表面。
本发明提供一种防静电干扰层的制备方法,该方法在提升抗指纹薄膜附着力的同时,不会对基材颜色产生影响。
技术方案:为解决上述技术问题,本发明采用的技术方案为:
一种防静电干扰层的制备方法,包括以下步骤:
(1)内嵌式触控屏彩色滤光阵列玻璃基板的外表面,进行清洁去污;
(2)采用等离子体清洗工艺,清除掉待镀膜玻璃表面的有机分子及水分子;
(3)采用真空磁控溅射镀膜技术,在内嵌式触控屏彩色滤光阵列玻璃基板的外表面镀防静电干扰层。
所述防静电干扰层表面电阻位于5.0E+7~5.0E+10Ω/□,550nm波段处透光率大于96%;且经常温时效性测试及信耐性测试后,表面电阻依然位于5.0E+7~5.0E+10Ω/□。其中Ω/□为方阻单位,即单位方块下的电阻。
作为优选方案,所述防静电干扰层的材质为复合陶瓷材料,抗氧化温度大于800℃,所述复合陶瓷材料在550nm波段处透光率大于96%。
所述复合陶瓷材料由多种金属/非金属的氧化物或氮化物复合而成,其中的金属/非金属选自铝(Al)、钛(Ti)、锆(Zr)、铬(Cr)、铌(Nb)、钨(W)、锗(Ge)、锑(Sb)、钇(Y)、钼(Mo)、镍(Ni)、锡(Sn)或碳(C)、硅(Si)、硼(B)中的一种或几种,组成禁带宽度连续可调的半导体材料。
作为优选方案,所述防静电干扰层的厚度为20-25nm;更优选为23nm。
步骤(1)中清洁去污具体是指,经无水乙醇擦拭后,再用超纯水清洗,然后风刀吹干。
步骤(2)具体是指,进入真空腔体后,传输到等离子体清洗腔,抽本底真空至10- 3torr,通入氩气,流量控制100sccm,待真空稳定后,打开等离子体清洗装置,离子清洗5mins,以清除掉内嵌式触控屏彩色滤光阵列玻璃基板的外表面残留的有机物及水分子。
步骤(3)具体是指,清洗完毕后,内嵌式触控屏传输至真空镀膜腔体,抽本底真空至10-5torr,通入氩气及反应气体,流量控制氩气为200sccm,反应气体200sccm,真空维持在10-3torr,待真空稳定后,开启磁控溅射阴极靶材电源,溅射功率10KW,镀膜时间2mins。
有益效果:本发明提供的防静电干扰层的制备方法,材料为氧化温度高于800℃的高透光复合陶瓷材料,采取的镀膜方法为真空磁控溅射镀膜,解决了防静电干扰材料经信耐性测试后表面电阻超出规格,薄膜脱落,进而完全失效的问题。
附图说明
图1是本发明的示意图;
图中:10为薄膜晶体管(TFT)玻璃基板,11为液晶显示层,12为触控电路层,13为彩色滤光阵列(CF)玻璃基板,14为防静电干扰层(HSR)。
具体实施方式
下面结合附图对本发明作更进一步的说明。
如图1所示,现有的内嵌式触控屏包括依次排布的薄膜晶体管(TFT)玻璃基板10、液晶显示层11、触控电路层12和彩色滤光阵列(CF)玻璃基板13;
一种应用于内嵌式触控屏的防静电干扰层的制备方法,包括以下步骤:
(1)内嵌式触控屏彩色滤光阵列玻璃基板的外表面,进行清洁去污:经无水乙醇擦拭后,再用超纯水清洗,然后风刀吹干;
(2)采用等离子体清洗工艺,清除掉待镀膜玻璃表面的有机分子及水分子:进入真空腔体后,传输到等离子体清洗腔,抽本底真空至10-3torr,通入氩气,流量控制100sccm,待真空稳定后,打开等离子体清洗装置,离子清洗5mins,以清除掉内嵌式触控屏彩色滤光阵列玻璃基板的外表面残留的有机物及水分子;
(3)采用真空磁控溅射镀膜技术,在内嵌式触控屏彩色滤光阵列玻璃基板的外表面镀防静电干扰层14:清洗完毕后,内嵌式触控屏传输至真空镀膜腔体,抽本底真空至10-5torr,通入氩气及反应气体,流量控制氩气为200sccm,反应气体200sccm,真空维持在10-3torr,待真空稳定后,开启磁控溅射阴极靶材电源,溅射功率10KW,镀膜时间2mins;镀膜完毕,经缓冲腔退出至大气环境,完成镀膜。
实例1
采用康宁玻璃基板,经无水乙醇擦拭、超纯水清洗、风刀吹干后,移至真空镀膜设备上料台;产品传输至离子清洗腔体,抽本底真空至5×10-3torr,开启氩气,流量控制100sccm,待真空稳定后,开启等离子体清洗电源,功率1KW,清洗时间5mins;清洗完毕,传输至真空镀膜腔体,抽本底真空至3×10-5torr,通入氩气及反应气体,氩气流量200sccm,反应气体200sccm,维持真空10-3torr,待真空稳定后,开启磁控溅射阴极靶材电源,功率10KW,镀膜时间持续2mins;镀膜完毕,经缓冲腔退出至大气环境,完成镀膜。
薄膜性能测试:
采用台阶仪测试薄膜厚度,经测试,膜厚23nm;
采用三菱高阻测试仪测试表面电阻,经测试,薄膜表面电阻7×108Ω/□;
采用可见光分光分度计测试透光率(550nm处),经测试,透光率96.7%
信耐性测试:
高温储存测试,测试条件为:80℃,存储240小时
经测试,表面电阻变化小于5%,无脱膜现象;
高温高湿测试,测试条件为:
经测试,表面电阻变化小于10%,无脱膜现象;
常温时效测试,测试条件为:室温静止放置1个月。
经测试,表面电阻变化小于1%,无脱膜现象;
酒精浸泡测试,测试条件为:无水乙醇室温浸泡48小时。
经测试,表面电阻变化小于1%,无脱膜现象。
经测试,该防静电干扰材料质量达到规定要求,产品性能稳定可靠。
以上所述仅是本发明的优选实施方式,应当指出:对于本技术领域的普通技术人员来说,在不脱离本发明原理的前提下,还可以做出若干改进和润饰,这些改进和润饰也应视为本发明的保护范围。

Claims (8)

1.一种防静电干扰层的制备方法,包括以下步骤:
(1)内嵌式触控屏彩色滤光阵列玻璃基板的外表面,进行清洁去污;
(2)采用等离子体清洗工艺,清除掉待镀膜玻璃表面的有机分子及水分子;
(3)采用真空磁控溅射镀膜技术,在内嵌式触控屏彩色滤光阵列玻璃基板的外表面镀防静电干扰层。
2.根据权利要求1所述的防静电干扰层的制备方法,其特征在于:所述防静电干扰层表面电阻位于5.0E+7~5.0E+10Ω/□,550nm波段处透光率大于96%;且经常温时效性测试及信耐性测试后,表面电阻依然位于5.0E+7~5.0E+10Ω/□。
3.根据权利要求1或2所述的防静电干扰层的制备方法,其特征在于:所述防静电干扰层的材质为陶瓷材料,抗氧化温度大于800℃,所述复合陶瓷材料在550nm波段处透光率大于96%。
4.根据权利要求3所述的防静电干扰层的制备方法,其特征在于:所述复合陶瓷材料由多种金属/非金属的氧化物或氮化物复合而成,其中的金属/非金属选自铝、钛、锆、铬、铌、钨、锗、锑、钇、钼、镍、锡或碳、硅、硼中的一种或几种,组成禁带宽度连续可调的半导体材料。
5.根据权利要求1所述的防静电干扰层的制备方法,其特征在于:所述防静电干扰层的厚度为20-25nm;优选为23nm。
6.根据权利要求1所述的防静电干扰层的制备方法,其特征在于:步骤(1)中清洁去污具体是指,经无水乙醇擦拭后,再用超纯水清洗,然后风刀吹干。
7.根据权利要求1所述的防静电干扰层的制备方法,其特征在于:步骤(2)具体是指,进入真空腔体后,传输到等离子体清洗腔,抽本底真空至10-3torr,通入氩气,流量控制100sccm,待真空稳定后,打开等离子体清洗装置,离子清洗5mins,以清除掉内嵌式触控屏彩色滤光阵列玻璃基板的外表面残留的有机物及水分子。
8.根据权利要求1所述的防静电干扰层的制备方法,其特征在于:步骤(3)具体是指,清洗完毕后,内嵌式触控屏传输至真空镀膜腔体,抽本底真空至10-5torr,通入氩气及反应气体,流量控制氩气为200sccm,反应气体200sccm,真空维持在10-3torr,待真空稳定后,开启磁控溅射阴极靶材电源,溅射功率10KW,镀膜时间2mins。
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CN110527963A (zh) * 2019-08-05 2019-12-03 芜湖长信科技股份有限公司 一种防静电触摸显示一体屏的制造方法
CN112111715A (zh) * 2020-09-22 2020-12-22 长沙壹纳光电材料有限公司 一种改善高阻膜方阻稳定性的方法及系统

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