CN106756829A - A kind of SiONx top layers disappear shadow technology and SiONx method for manufacturing thin film - Google Patents
A kind of SiONx top layers disappear shadow technology and SiONx method for manufacturing thin film Download PDFInfo
- Publication number
- CN106756829A CN106756829A CN201611159973.5A CN201611159973A CN106756829A CN 106756829 A CN106756829 A CN 106756829A CN 201611159973 A CN201611159973 A CN 201611159973A CN 106756829 A CN106756829 A CN 106756829A
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- CN
- China
- Prior art keywords
- sionx
- layers
- films
- plated film
- outside
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0676—Oxynitrides
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/0412—Digitisers structurally integrated in a display
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
- G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
- G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Theoretical Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Human Computer Interaction (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Disappear shadow technology and SiONx method for manufacturing thin film the invention discloses a kind of SiONx top layers, display screen includes glassy layer and the photoresistance being located on the outside of glassy layer, IM layers and ITO layer are provided with the outside of the photoresistance, the etched figure in the ITO layer, the ITO layer is externally provided with metal edge frame, the metal edge frame outside is provided with SiONx films, and SiONx films are whole face plated film, again exposes the etching of golden finger part after the completion of plated film.Magnetron sputtering technique prepares SiONx films.The present invention carries out top layer plated film using SiONx materials, is matched using optical software, OGS products laminating descendant's machine side is observed etched mark, meets and requires, with preferable application prospect.
Description
Technical field
The invention belongs to electronical display flat board production technical field, disappear shadow skill more specifically to a kind of SiONx top layers
Art and SiONx method for manufacturing thin film.
Background technology
Existing OGS products disappear shadow, in the case where OC layers of protection is not used, are observed it is easy to see that etching in people's machine side
Trace..
The content of the invention
Present invention aim to address the problem that prior art is present, there is provided one kind prepares simplicity, can match refractive index, very
The SiONx top layers of good elimination indentation disappear shadow technology and SiONx method for manufacturing thin film, and top layer plated film is carried out using SiONx materials,
Matched using optical software, OGS products laminating descendant's machine side is observed etched mark, met and require.
To achieve these goals, the technical scheme taken of the present invention is：This SiONx top layers for being provided disappear shadow skill
Art, display screen includes glassy layer and the photoresistance being located on the outside of glassy layer, IM layers and ITO layer is provided with the outside of the photoresistance, in institute
Etched figure in ITO layer is stated, the ITO layer is externally provided with metal edge frame, and the metal edge frame outside is provided with SiONx films, SiONx
Film is whole face plated film, again exposes the etching of golden finger part after the completion of plated film.
To make above-mentioned technical proposal more detailed and specific, the present invention also provides optimization technique side further below
Case, to obtain satisfied practical function：
Described IM layers is Nb2O5+SiO2 layers.
SiONx films plated film under vacuum conditions.
It is under vacuum conditions that ion gun bombardment Si targets sputter out Si target particles using Ar, while 02 and N2 is passed through,
So as to form a kind of SiONx film layers of stabilization.
The present invention compared with prior art, with advantages below：SiONx top layers of the present invention disappear shadow technology and SiONx films
Preparation method, top layer plated film is carried out using SiONx materials, is matched using optical software, makes OGS products laminating descendant's machine side
Etched mark cannot be observed, is met and is required, with preferable application prospect.
Brief description of the drawings
The content expressed by the accompanying drawing of this specification and the mark in figure are briefly described below：
Fig. 1 is side structure schematic diagram of the present invention；
Fig. 2 is positive structure schematic of the present invention；
Reference：1st, glassy layer, 2, photoresistance, 3, IM layers, 4, ITO layer, 5, metal edge frame, 6, SiONx films, 7, etching
Trace.
Specific embodiment
Below against accompanying drawing, by the description to embodiment, further details of is made to specific embodiment of the invention
Explanation.
This SiONx top layers of the present invention disappear shadow technology, and as shown in Figure 1, 2, display screen includes glassy layer 1 and is located at glassy layer
The photoresistance 2 in 1 outside, IM layers 3 and ITO layer 4 are provided with the outside of photoresistance 2, and the etched figure in ITO layer 4 forms etched mark 7, ITO,
4 are externally provided with metal edge frame 5, and the outside of metal edge frame 5 is provided with SiONx films 6, and SiONx films 6 are whole face plated film, after the completion of plated film
The etching of golden finger part is exposed again.IM layers 3 is Nb2O5+SiO2 layer, and bottom disappears shadow, is cooperated work with SiONx film layers
With according to actual optical match situation control Nb2O5 and SiO2 ratios.
The plated film under vacuum conditions of SiONx films 6, to ensure preferable coating effects.
The plated film of SiONx：The whole faces of SiONx that vacuum chamber is carried out after substrate please be cleaned are plated, the thickness of monitoring SiONx,
The reflectivity and its coordinate a*, b* value and adhesive force situation of product.Because of product surface existing metal and ITO circuits, SiONx
Belong to whole face plated film, expose the etching of golden finger part after the completion of plated film.
The present invention also provides a kind of preparation method of SiONx films：
Using magnetron sputtering technique, magnetron sputtering introduces magnetic field by target cathode surface, using magnetic field to charged particle
Constraint plasma density is improved increase sputtering raste.It is under vacuum conditions ion gun using Ar, bombardment Si targets make Si
Target particle is sputtered out, while being passed through 02 and N2 of certain mixing ratio, can regulate and control refractive index by controlling 02 and N2 mixing ratios, from
And form a kind of SiONx film layers of stabilization.
SiONx films have many excellent characteristics, particularly controllable refractive index, and breakdown electric field is high.Can using its refractive index
This characteristic is adjusted, using certain oxygen-nitrogen ratio, is controlled under certain thickness, thickness is different because of product, and general control exists
20~100nm, the shadow product that disappears to existing routine carries out top layer and disappears shadow, achieves the very good shadow effect that disappears, and higher hits
Electric field is worn, ITO and metal routing that also can be on counter plate carry out electrostatic protection.
SiONx is approached in the reflectivity of visible region with the reflectivity after product I TO films, and its refractive index is in SiO2 and ITO
Between, matching ITO refractive indexes can be met, ito film is reduced with the aberration of etched area, eliminate erosion to reach from the observation of people's machine side
The purpose of indentation.
This SiONx top layers of the present invention disappear the preparation method of shadow technology and SiONx films, make OGS products man-machine after fitting
Face cannot observe etched mark, meet customer requirement, and the use of this technology successfully solves vehicle-mounted product and offsets shadow effect
High request, opens the market of vehicle-mounted product.
The present invention is exemplarily described above in conjunction with accompanying drawing, but the present invention is not limited to aforesaid way, only
The improvement of the various unsubstantialities to be carried out using method of the present invention design and technical scheme directly applies to other occasions
, all fall within protection scope of the present invention.
Claims (4)
1. a kind of SiONx top layers disappear shadow technology, and display screen includes glassy layer and the photoresistance being located on the outside of glassy layer, and its feature exists
In：IM layers and ITO layer are provided with the outside of the photoresistance, the etched figure in the ITO layer, the ITO layer is externally provided with metal edges
Frame, the metal edge frame outside is provided with SiONx films, and SiONx films are whole face plated film, again by golden finger portion after the completion of plated film
Etching is divided to expose.
2. disappear shadow technology according to the SiONx top layers described in claim 1, it is characterised in that：Described IM layers is Nb2O5+SiO2 layers.
3. disappear shadow technology according to the SiONx top layers described in claim 2, it is characterised in that：The SiONx films are in vacuum environment
Lower plated film.
4. disappear SiONx method for manufacturing thin film in shadow technology according to the SiONx top layers described in claim 1, it is characterised in that：True
Using Ar for ion gun bombardment Si targets sputter out Si target particles under Altitude, while 02 and N2 is passed through, so as to form one kind
The SiONx film layers of stabilization.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611159973.5A CN106756829A (en) | 2016-12-15 | 2016-12-15 | A kind of SiONx top layers disappear shadow technology and SiONx method for manufacturing thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611159973.5A CN106756829A (en) | 2016-12-15 | 2016-12-15 | A kind of SiONx top layers disappear shadow technology and SiONx method for manufacturing thin film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106756829A true CN106756829A (en) | 2017-05-31 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611159973.5A Pending CN106756829A (en) | 2016-12-15 | 2016-12-15 | A kind of SiONx top layers disappear shadow technology and SiONx method for manufacturing thin film |
Country Status (1)
| Country | Link |
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| CN (1) | CN106756829A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111399692A (en) * | 2020-04-29 | 2020-07-10 | 业成科技（成都）有限公司 | Touch panel, preparation method thereof and electronic equipment |
| CN113066942A (en) * | 2021-03-19 | 2021-07-02 | 芜湖长信科技股份有限公司 | IMITO structure of OLED and shadow eliminating and film coating method of OLED |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1363717A (en) * | 2001-12-07 | 2002-08-14 | 中国科学院长春光学精密机械与物理研究所 | Low-temp magnetically controlled sputtering technology for preparing non-stress O-N-Si film |
| CN103425375A (en) * | 2013-08-09 | 2013-12-04 | 芜湖长信科技股份有限公司 | Capacitive touch screen and manufacturing method thereof |
| CN203405801U (en) * | 2013-08-14 | 2014-01-22 | 芜湖长信科技股份有限公司 | OGS provided with color film border through vacuum plating |
| CN203812218U (en) * | 2014-01-25 | 2014-09-03 | 福建省辉锐电子技术有限公司 | Touch panel |
| CN104035637A (en) * | 2014-05-09 | 2014-09-10 | 浙江金指科技有限公司 | Manufacturing technology of OGS touch screen |
| CN105760036A (en) * | 2016-04-08 | 2016-07-13 | 凯盛信息显示材料(黄山)有限公司 | Rear shadow elimination film-coating method of OGS capacitive touch screen |
-
2016
- 2016-12-15 CN CN201611159973.5A patent/CN106756829A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1363717A (en) * | 2001-12-07 | 2002-08-14 | 中国科学院长春光学精密机械与物理研究所 | Low-temp magnetically controlled sputtering technology for preparing non-stress O-N-Si film |
| CN103425375A (en) * | 2013-08-09 | 2013-12-04 | 芜湖长信科技股份有限公司 | Capacitive touch screen and manufacturing method thereof |
| CN203405801U (en) * | 2013-08-14 | 2014-01-22 | 芜湖长信科技股份有限公司 | OGS provided with color film border through vacuum plating |
| CN203812218U (en) * | 2014-01-25 | 2014-09-03 | 福建省辉锐电子技术有限公司 | Touch panel |
| CN104035637A (en) * | 2014-05-09 | 2014-09-10 | 浙江金指科技有限公司 | Manufacturing technology of OGS touch screen |
| CN105760036A (en) * | 2016-04-08 | 2016-07-13 | 凯盛信息显示材料(黄山)有限公司 | Rear shadow elimination film-coating method of OGS capacitive touch screen |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111399692A (en) * | 2020-04-29 | 2020-07-10 | 业成科技（成都）有限公司 | Touch panel, preparation method thereof and electronic equipment |
| CN113066942A (en) * | 2021-03-19 | 2021-07-02 | 芜湖长信科技股份有限公司 | IMITO structure of OLED and shadow eliminating and film coating method of OLED |
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| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
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| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20170531 |
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| RJ01 | Rejection of invention patent application after publication |