CN106711244B - Ibc电池接触开孔工艺 - Google Patents
Ibc电池接触开孔工艺 Download PDFInfo
- Publication number
- CN106711244B CN106711244B CN201710046580.1A CN201710046580A CN106711244B CN 106711244 B CN106711244 B CN 106711244B CN 201710046580 A CN201710046580 A CN 201710046580A CN 106711244 B CN106711244 B CN 106711244B
- Authority
- CN
- China
- Prior art keywords
- opening process
- dielectric film
- pattern
- conductive contact
- contact opening
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title claims abstract description 23
- 239000002002 slurry Substances 0.000 claims abstract description 24
- 238000004140 cleaning Methods 0.000 claims abstract description 9
- 238000000137 annealing Methods 0.000 claims abstract description 8
- 239000004094 surface-active agent Substances 0.000 claims abstract description 8
- 238000007641 inkjet printing Methods 0.000 claims abstract description 4
- 238000007650 screen-printing Methods 0.000 claims abstract description 4
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 4
- 239000010703 silicon Substances 0.000 claims abstract description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 8
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 8
- 239000012459 cleaning agent Substances 0.000 claims description 8
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 claims description 8
- 239000011521 glass Substances 0.000 claims description 8
- 239000002904 solvent Substances 0.000 claims description 8
- 238000002161 passivation Methods 0.000 claims description 7
- 238000007639 printing Methods 0.000 claims description 7
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 6
- 239000000843 powder Substances 0.000 claims description 6
- 239000013008 thixotropic agent Substances 0.000 claims description 6
- 238000005245 sintering Methods 0.000 claims description 5
- IIZPXYDJLKNOIY-JXPKJXOSSA-N 1-palmitoyl-2-arachidonoyl-sn-glycero-3-phosphocholine Chemical compound CCCCCCCCCCCCCCCC(=O)OC[C@H](COP([O-])(=O)OCC[N+](C)(C)C)OC(=O)CCC\C=C/C\C=C/C\C=C/C\C=C/CCCCC IIZPXYDJLKNOIY-JXPKJXOSSA-N 0.000 claims description 4
- 229940067606 lecithin Drugs 0.000 claims description 4
- 235000010445 lecithin Nutrition 0.000 claims description 4
- 239000000787 lecithin Substances 0.000 claims description 4
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 claims description 3
- VXQBJTKSVGFQOL-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethyl acetate Chemical compound CCCCOCCOCCOC(C)=O VXQBJTKSVGFQOL-UHFFFAOYSA-N 0.000 claims description 3
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 claims description 3
- 229910018068 Li 2 O Inorganic materials 0.000 claims description 3
- 229910004205 SiNX Inorganic materials 0.000 claims description 3
- 229910020286 SiOxNy Inorganic materials 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 229920002472 Starch Polymers 0.000 claims description 3
- 241000779819 Syncarpia glomulifera Species 0.000 claims description 3
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 claims description 3
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910021485 fumed silica Inorganic materials 0.000 claims description 3
- 239000001739 pinus spp. Substances 0.000 claims description 3
- 235000019698 starch Nutrition 0.000 claims description 3
- 239000008107 starch Substances 0.000 claims description 3
- 229940116411 terpineol Drugs 0.000 claims description 3
- 229940036248 turpentine Drugs 0.000 claims description 3
- 150000002500 ions Chemical class 0.000 claims description 2
- 230000001788 irregular Effects 0.000 claims description 2
- 229910017855 NH 4 F Inorganic materials 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 238000006243 chemical reaction Methods 0.000 abstract description 2
- 239000011148 porous material Substances 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 238000001259 photo etching Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- LDDQLRUQCUTJBB-UHFFFAOYSA-N ammonium fluoride Chemical compound [NH4+].[F-] LDDQLRUQCUTJBB-UHFFFAOYSA-N 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
- H01L31/022458—Electrode arrangements specially adapted for back-contact solar cells for emitter wrap-through [EWT] type solar cells, e.g. interdigitated emitter-base back-contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Sustainable Energy (AREA)
- Sustainable Development (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Photovoltaic Devices (AREA)
- Hybrid Cells (AREA)
Abstract
本发明提供一种IBC电池接触开孔工艺,在太阳能电池的发射极和背场上形成介质膜;在介质膜上丝网印刷或者喷墨打印烧穿浆料形成导电触点图案;通过退火,烧穿浆料与介质膜相互作用,导电触点图案处形成开孔区域,使用表面活性剂进行清洗处理,在导电触点处掺杂的硅被暴露出来;其他地方仍保留介质膜;该种IBC电池接触开孔工艺,能够形成清晰度高的、成本低的金属化开孔。本发明通过利用烧穿浆料在高温下与沉积的介质绝缘膜发生反应形成太阳能电池局部电接触的图案,由此满足降低工艺复杂性和相应的生产成本的要求。
Description
技术领域
本发明涉及一种IBC电池接触开孔工艺。
背景技术
IBC(Interdigitated back contact指交叉背接触)电池,是指电池正面无电极,正负两极金属栅线呈指状交叉排列于电池背面。IBC电池最大的特点是PN结和金属接触都处于电池的背面,正面没有金属电极遮挡的影响,因此具有更高的短路电流Jsc,同时背面可以容许较宽的金属栅线来降低串联电阻Rs从而提高填充因子FF;加上电池前表面场(Front Surface Field,FSF)以及良好钝化作用带来的开路电压增益,使得这种正面无遮挡的电池不仅转换效率高,而且看上去更美观,同时,全背电极的组件更易于装配。IBC电池是目前实现高效晶体硅电池的技术方向之一。
目前IBC电池实现金属化工程中需要在介质膜上生成接触孔,通常采用光刻、激光开孔和腐蚀浆料的方法进行,光刻法比较昂贵,激光开孔容易对介质膜下的结区造成损伤,腐蚀浆料开孔,受到印刷能力的限制,开孔的区域往往比较大,而且边缘不清晰。
上述问题是在IBC电池的生产过程中应当予以考虑并解决的问题。
发明内容
本发明的目的是提供一种IBC电池接触开孔工艺解决现有技术中存在的光刻法比较昂贵,激光开孔容易对介质膜下的结区造成损伤,腐蚀浆料开孔开孔的区域往往比较大,而且边缘不清晰等问题。
本发明的技术解决方案是:
一种IBC电池接触开孔工艺,在太阳能电池的发射极和背场上形成介质膜;在介质膜上丝网印刷或者喷墨打印烧穿浆料形成导电触点图案;通过退火,烧穿浆料与介质膜相互作用,导电触点图案形成开孔区域;使用清洗剂进行清洗处理,在导电触点处掺杂的硅暴露出来,其他地方仍保留介质膜。
进一步地,介质膜包括钝化介质层和抗反射膜,包括SiNx、SiO2、SiOxNy、TiO2、Al2O3中的一种或多种。
进一步地,烧穿浆料包括溶剂、触变剂、表面活性剂和玻璃粉末。
进一步地,溶剂包括松节油、松油醇、二乙二醇丁醚醋酸脂、二乙二醇丁醚中的一种或多种;触变剂包括树胶、淀粉、气相二氧化硅中的一种或者几种;表面活性剂包括卵磷脂、环己酮中的一种或几种;玻璃粉末成分包括PbO、B2O3、Bi2O3、SiO2、Al2O3、ZnO、CaO、TiO2、V2O5、Li2O、MgO中的一种或多种。
进一步地,表面活性剂包括卵磷脂、乙醇、环己酮。清洗剂为含有F离子的溶剂,包括HF、NH4F、NaF、KF中的一种或者几种。
进一步地,导电触点图案为连续的或分离的规则图形、不规则图形。
进一步地,导电触点图案为直线时,采用线条宽度为30-100微米的连续直线形或分段直线形。
进一步地,导电触点图案为分离的图形时,每个导电触点图案的面积为2000平方微米到30000平方微米。
进一步地,退火温度为400-900度,时间为30s-20min。
进一步地,采用浓度为0.5%-5%的清洗剂进行清洗,去除剩余的烧穿浆料,然后在发射极和背场区域分别印刷接触浆料,烧结后,接触浆料通过开孔处分别与发射极、背场区域实现局部接触,分别得到正极电极和负极电极。
本发明的有益效果是:该种IBC电池接触开孔工艺,能够形成清晰度高的、成本低的金属化开孔。本发明通过利用烧穿浆料在高温下与沉积的介质绝缘膜发生反应形成太阳能电池局部电接触的图案,由此满足降低复杂性和相应的生产成本的要求。
附图说明
图1是在基体上形成背面发射极和背场区域的结构示意图;
图2是实施例中在发射极背场上形成介质膜的结构示意图;
图3是实施例中介质膜上印刷烧穿浆料退火的示意图;
图4是实施例中退火清洗后形成掺杂层上的开孔区域的示意图;
图5是实施例中金属化后电极通过开孔区域与掺杂层形成欧姆接触的示意图;
图6是实施例一中导电触点图案的示意图;
图7是实施例二中导电触点图案的示意图;
图中:1-发射极,2-背场,3-介质膜,4-烧穿浆料5-开孔区域6-正极电极7-负极电极,8-前表面场,9-钝化减反膜,10-基体。
具体实施方式
下面结合附图详细说明本发明的优选实施例。
一种IBC电池接触开孔工艺,在太阳能电池的发射极1和背场2上形成介质膜3,如图2;在介质膜3上丝网印刷或者喷墨打印烧穿浆料4形成导电触点图案,如图3;通过退火,烧穿浆料4与介质膜3相互作用,导电触点图案形成开孔区域5,如图4;使用清洗剂进行清洗处理,在导电触点处掺杂的硅暴露,其他地方仍保留介质膜3。
烧穿浆料4包括溶剂、触变剂、表面活性剂和玻璃粉末。溶剂包括松节油、松油醇、二乙二醇丁醚醋酸脂、二乙二醇丁醚中的一种或多种;触变剂包括树胶、淀粉、气相二氧化硅中的一种或者几种;表面活性剂包括卵磷脂、环己酮中的一种或几种;玻璃粉末成分包括PbO、B2O3、Bi2O3、SiO2、Al2O3、ZnO、CaO、TiO2、V2O5、Li2O、MgO中的一种或多种。
介质膜3包括钝化介质层和抗反射膜,包括SiNx、SiO2、SiOxNy、TiO2、Al2O3中的一种或多种。
实施例一
IBC电池经过清洗,扩散,如图1,在基体上形成背面发射极和背场区域,在太阳能电池的发射极1和背场2上形成介质膜3,如图2;背表面镀膜后在发射极1和背场2区域对应的区域印刷含有烧穿浆料4,烧穿浆料4中含有PbO 50%、B2O3 10%、SiO2 25%、Al2O3 5%、ZnO 5%、Li2O 5%。如图6,印刷后图形宽度为50微米,长度为100微米,垂直方向上相邻图形的间距为1.5mm,进行250℃烘干,840℃下烧结2min,烧穿浆料4与介质膜3发生反应,形成开孔区域5,且烧穿浆料4并不与介质膜3下的掺杂层发生反应。
将烧结后的电池片采用浓度为2%的清洗剂HF溶液,清洗15秒,去除剩余的烧穿浆料4,然后在发射极1和背场2区域分别印刷接触浆料,烧结后,接触浆料通过开孔处与发射极1和背场2区域实现局部接触,如图5所示,分别得到正极电极6和负极电极7。电池片的正面依次设有前表面场8和钝化减反膜9。
实施例二
IBC电池经过清洗,扩散,如图1,在基体上形成背面发射极和背场区域,在太阳能电池的发射极1和背场2上形成介质膜3,如图2;背表面镀膜后在发射极1和背场2区域对应的区域印刷烧穿浆料4,即含有玻璃料的浆料,烧穿浆料4含有PbO 60%、B2O3 5%、SiO220%、Al2O3 3%、ZnO 7%、NaO 5%。如图7,印刷后图形为圆形,直径为50微米,垂直方向上相邻图形的间距为1.5mm,进行250℃烘干,840℃下烧结1.5min,烧穿浆料4与介质膜3发生反应,形成开孔区域5,烧穿浆料4并不与介质膜3下的掺杂层发生反应。
将烧结后的电池片采用浓度为5%的NH4F溶液,清洗30秒,去除剩余的玻璃料,然后在发射极1和背场2区域分别印刷接触浆料,烧结后,接触浆料通过开孔处与发射极1和背场2区域实现局部接触,分别得到正极电极6和负极电极7。
实施例一、二的IBC电池接触开孔工艺,能够形成清晰度高的、成本低的金属化开孔。实施例通过利用烧穿浆料4在高温下与沉积的介质绝缘膜发生反应形成太阳能电池局部电接触的图案,由此满足降低复杂性和相应的生产成本的要求。
Claims (8)
1.一种IBC电池接触开孔工艺,其特征在于:在太阳能电池的发射极和背场上形成介质膜;在介质膜上丝网印刷或者喷墨打印烧穿浆料形成导电触点图案;通过退火,烧穿浆料与介质膜相互作用,导电触点图案形成开孔区域;使用清洗剂进行清洗处理,在导电触点处掺杂的硅暴露出来,其他地方仍保留介质膜;其中,
烧穿浆料包括溶剂、触变剂、表面活性剂和玻璃粉末;溶剂包括松节油、松油醇、二乙二醇丁醚醋酸脂、二乙二醇丁醚中的一种或多种;触变剂包括树胶、淀粉、气相二氧化硅中的一种或者几种;表面活性剂包括卵磷脂、环己酮中的一种或几种;玻璃粉末成分包括PbO、B2O3、Bi2O3、SiO2、Al2O3、ZnO、CaO、TiO2、V2O5、Li2O、MgO中的一种或多种。
2.如权利要求1所述的IBC电池接触开孔工艺,其特征在于:介质膜包括钝化介质层和抗反射膜,包括SiNx、SiO2、SiOxNy、TiO2、Al2O3中的一种或多种。
3.如权利要求1或2所述的IBC电池接触开孔工艺,其特征在于:清洗剂为含有F离子的溶剂,包括HF、NH4F 、NaF、KF中的一种或者几种。
4.如权利要求1或2所述的IBC电池接触开孔工艺,其特征在于:导电触点图案为连续的或分离的规则图形、不规则图形。
5.如权利要求4所述的IBC电池接触开孔工艺,其特征在于:导电触点图案为直线时,采用线条宽度为30-100微米的连续直线形或分段直线形。
6.如权利要求4所述的IBC电池接触开孔工艺,其特征在于:当为分离的图形时,每个导电触点图案的面积为2000平方微米到30000平方微米。
7.如权利要求1或2所述的IBC电池接触开孔工艺,其特征在于:退火温度为400-900度,时间为30s-20min。
8.如权利要求1或2所述的IBC电池接触开孔工艺,其特征在于:采用浓度为0.5%-5%的清洗剂进行清洗,去除剩余的烧穿浆料,然后在发射极和背场区域分别印刷接触浆料,烧结后,接触浆料通过开孔处分别与发射极、背场区域实现局部接触,分别得到正极电极和负极电极。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710046580.1A CN106711244B (zh) | 2017-01-22 | 2017-01-22 | Ibc电池接触开孔工艺 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710046580.1A CN106711244B (zh) | 2017-01-22 | 2017-01-22 | Ibc电池接触开孔工艺 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN106711244A CN106711244A (zh) | 2017-05-24 |
CN106711244B true CN106711244B (zh) | 2023-01-17 |
Family
ID=58910148
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201710046580.1A Active CN106711244B (zh) | 2017-01-22 | 2017-01-22 | Ibc电池接触开孔工艺 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN106711244B (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111370539A (zh) * | 2020-03-19 | 2020-07-03 | 泰州中来光电科技有限公司 | 一种具有选择性发射极的太阳能电池的制备方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2395544A4 (en) * | 2009-02-05 | 2013-02-20 | Sharp Kk | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE |
WO2012083082A1 (en) * | 2010-12-15 | 2012-06-21 | Sun Chemical Corporation | Printable etchant compositions for etching silver nanoware-based transparent, conductive film |
JP2012140558A (ja) * | 2011-01-05 | 2012-07-26 | Sekisui Chem Co Ltd | 無機微粒子分散ペースト組成物 |
WO2012135551A1 (en) * | 2011-03-29 | 2012-10-04 | Sun Chemical Corporation | High-aspect ratio screen printable thick film paste compositions containing wax thixotropes |
JP2012248790A (ja) * | 2011-05-31 | 2012-12-13 | Yokohama Rubber Co Ltd:The | 太陽電池集電電極形成用導電性組成物および太陽電池セル |
JP5935255B2 (ja) * | 2011-07-22 | 2016-06-15 | 日立化成株式会社 | インクジェット用不純物拡散層形成組成物、不純物拡散層の製造方法、太陽電池素子の製造方法及び太陽電池の製造方法 |
CN102569530B (zh) * | 2012-02-24 | 2015-04-29 | 上饶光电高科技有限公司 | 一种晶体硅太阳电池背面钝化介质层局部刻蚀方法 |
KR20130110960A (ko) * | 2012-03-30 | 2013-10-10 | 삼성전자주식회사 | 도전성 페이스트 조성물 및 이를 이용한 태양전지 |
-
2017
- 2017-01-22 CN CN201710046580.1A patent/CN106711244B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
CN106711244A (zh) | 2017-05-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US8106291B2 (en) | Solar battery and manufacturing method therefor | |
US8293568B2 (en) | Crystalline silicon PV cell with selective emitter produced with low temperature precision etch back and passivation process | |
MX2015004291A (es) | Dispositivos fotovoltaicos con rejillas metalicas galvanizadas. | |
WO2009144996A1 (ja) | 太陽電池、太陽電池の製造方法および太陽電池モジュール | |
KR20140014137A (ko) | 태양전지용 스크린 제판 및 태양전지의 전극의 인쇄 방법 | |
JP2007521668A (ja) | バックコンタクト型太陽電池とその製造法 | |
WO2014098016A1 (ja) | 太陽電池セル及びその製造方法 | |
CN108666376B (zh) | 一种p型背接触太阳电池及其制备方法 | |
JP2007281447A (ja) | 太陽電池 | |
CN103858239A (zh) | 全背接触太阳能电池和制造方法 | |
CN113113501A (zh) | 一种mwt异质结太阳能电池及其制备方法 | |
JP2007266262A (ja) | インターコネクタ付き太陽電池、太陽電池モジュールおよび太陽電池モジュールの製造方法 | |
KR101597532B1 (ko) | 후면전극형 태양전지의 제조방법 | |
CN108666386B (zh) | 一种p型背接触太阳电池及其制备方法 | |
WO2013100084A1 (ja) | 電極用導電性ペースト、太陽電池および太陽電池の製造方法 | |
US20100319766A1 (en) | Solar cell and method for manufacturing the same | |
CN106653876A (zh) | 一种太阳能电池 | |
CN216597603U (zh) | 一种提升绝缘隔离效果的背接触异质结太阳能电池 | |
JP2010282998A (ja) | 太陽電池、太陽電池の製造方法 | |
CN106711244B (zh) | Ibc电池接触开孔工艺 | |
CN114038922A (zh) | 一种提升绝缘隔离效果的背接触异质结太阳能电池及其制作方法 | |
CN102468369B (zh) | 在太阳能电池表面形成金属电极的方法 | |
JP5171653B2 (ja) | 太陽電池とその製造方法 | |
JP2017139351A (ja) | 太陽電池素子の製造方法および太陽電池素子 | |
CN207852689U (zh) | 一种叉指背接触太阳能电池片 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
CB02 | Change of applicant information | ||
CB02 | Change of applicant information |
Address after: 225300 Jiangsu Province, Taizhou City Hailing Xingtai Road No. 268 Applicant after: LONGI SOLAR TECHNOLOGY (TAIZHOU) Co.,Ltd. Address before: 225300 Jiangsu province Taizhou Xingtai Road No. 268 Applicant before: TAIZHOU LERRISOLAR TECHNOLOGY Co.,Ltd. |
|
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |