CN106711135A - Modularized photodiode packaging device - Google Patents
Modularized photodiode packaging device Download PDFInfo
- Publication number
- CN106711135A CN106711135A CN201710012879.5A CN201710012879A CN106711135A CN 106711135 A CN106711135 A CN 106711135A CN 201710012879 A CN201710012879 A CN 201710012879A CN 106711135 A CN106711135 A CN 106711135A
- Authority
- CN
- China
- Prior art keywords
- led
- substrate
- modular
- crystal grain
- conductor layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 25
- 239000013078 crystal Substances 0.000 claims abstract description 61
- 239000000758 substrate Substances 0.000 claims abstract description 37
- 239000004020 conductor Substances 0.000 claims abstract description 35
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000000741 silica gel Substances 0.000 claims abstract description 12
- 229910002027 silica gel Inorganic materials 0.000 claims abstract description 12
- 239000003822 epoxy resin Substances 0.000 claims abstract description 5
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 5
- 229910052751 metal Inorganic materials 0.000 claims abstract description 4
- 239000002184 metal Substances 0.000 claims abstract description 4
- 239000002245 particle Substances 0.000 claims description 34
- 238000005538 encapsulation Methods 0.000 claims description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 230000005484 gravity Effects 0.000 claims description 3
- 230000003287 optical effect Effects 0.000 claims description 3
- 238000005096 rolling process Methods 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 229910010293 ceramic material Inorganic materials 0.000 claims description 2
- 239000000463 material Substances 0.000 claims description 2
- 239000011812 mixed powder Substances 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 claims 1
- 239000000919 ceramic Substances 0.000 abstract description 9
- 230000010354 integration Effects 0.000 abstract description 2
- 230000005855 radiation Effects 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 2
- 238000012536 packaging technology Methods 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000011469 building brick Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
Abstract
The invention discloses a modularized photodiode packaging device, and belongs to the diode packaging technical field; a ceramic substrate is provided with a through hole filled with a non-luminance diode crystal grain, and epoxy resin is filled between the substrate and the crystal grain; the bottom surface of the ceramic substrate is provided with two conductor layers; the top surface of the ceramic substrate is provided with two conductor layers; an LED upside-down mounting diode crystal grain is arranged above the two conductor layers on the top surface of the ceramic substrate, and two electrodes are respectively connected with the two conductor layers; the crystal grain is wrapped and packaged by silica gel above the ceramic substrate, and a circuit is connected; end electrodes are arranged on two side faces of the ceramic substrates, and connected with the upper and lower conductor layers; the end electrodes and the lower conductor layer are provided with an easy solderability metal layer. The modularized photodiode packaging device can improve the product lighting efficiency, can enlarge product heat radiation efficiency and ensure LED crystal grain safety, thus satisfying product thinning and integration design requirements by clients.
Description
Technical field
The present invention relates to a kind of modular photodiode packaging, belong to diode packaging technology field.
Background technology
With continuing to develop for science and technology, electronic product updates the speed of iteration also in quickening, and LED paster components
To miniaturization, integrated development.The encapsulation technology of LED pasters is constituted using copper stent combination plastic mold in the market,
LED grain and protection component are covered as carrier and with silica gel mixed fluorescent powder inside it.
Finished product lighting angle is smaller after the LED paster encapsulation technologies of this in the market, the encapsulation of its product, and luminescent grain does not set
Put in light-emitting zone silica gel, influence luminous efficiency, design space occupancy is more, less suitable for the design requirement of miniaturization.
The content of the invention
In order to overcome drawbacks described above, problem to be solved by this invention to be to provide a kind of modular photodiode encapsulation
Device, is conducive to improving the luminous efficiency of product, increases the lighting angle of product, reduces taking up room for component, is more suitable for small
The product design demand of type.
In order to solve the above-mentioned technical problem, the technical solution adopted in the present invention is：
A kind of modular photodiode packaging, it is characterised in that：A kind of modular photodiode packaging,
It is characterized in that：Through hole is set on substrate, and not LED crystal particle is set in through hole, filled between substrate and crystal grain
Epoxy resin；The lower surface of the substrate is provided with lower conductor layer, and lower conductor layer connects with the lower surface of not LED crystal particle
Connect；The upper surface of substrate is provided with upper conductor layer, and upper conductor layer connects not LED crystal particle upper surface；The substrate upper table
The upper conductor layer top in face sets flip LED diode crystal particle, and the N poles of flip LED diode crystal particle are brilliant with not light emitting diode
The connected part upper conductor layer connection in grain top, the P poles of flip LED diode crystal particle are connected with remaining upper conductor layer；In substrate
Top pass through layer of silica gel wrapping and encapsulating crystal grain and upper and lower conductor layer and substrate；In the two sides of substrate, termination electrode, end electricity are set
Pole connects upper and lower conductor layer；Being set on termination electrode and lower conductor layer has solderability metal level.
Foregoing a kind of modular photodiode packaging, the substrate is ceramic material.
Foregoing a kind of modular photodiode packaging, the substrate of the flip LED crystal grain epitaxial layer, its energy
Energy gap of the gap higher than light emitting epitaxial layer.The substrate of AlInGaN flip LED chips is sapphire Al2O3； AlxGa（1-x）As upside-down mountings
The substrate of LED chip is AlyGa（1-y）As, x>y。
Foregoing a kind of modular photodiode packaging, the flip LED crystal grain emission wavelength from 300nm to
It is the integrated LED crystal grain composition of tandem type between 980nm.Preferably, the flip LED diode crystal particle is the collection of tandem type
Into the upside-down mounting crystal grain of AlInGaN LED grains composition.The flip LED chips emission wavelength is between 300nm to 550nm.
Foregoing a kind of modular photodiode packaging, the not LED crystal particle may be designed to trapezoidal
Section prevents crystal grain from rolling to reduce crystal grain center of gravity；Surface sets silver projection to increase electric conductivity thereon.
Foregoing a kind of modular photodiode packaging, the not LED crystal particle is used as flip LED
Chip protection diode.The not LED crystal particle is connected with flip LED diode crystal particle with parallel circuit.
Foregoing a kind of modular photodiode packaging, the silica gel is optical clear silica gel mixed fluorescent powder
Mixed arogel.
The beneficial effects of the invention are as follows：
1st, using flip LED crystal grain, luminous flux loss is reduced, lifts its luminous efficiency；
2nd, will not LED package in ceramic substrate, because ceramics thermal conductivity factor be more than epoxy resin, so as to significantly carry
Rise its radiating efficiency；
3rd, using modular Integrated design, the work(of luminescence component and control with the protection of electronic building brick is had concurrently in same device
Can, taking up room for product is effectively reduced, meet the design requirement of miniaturization.
Brief description of the drawings
Fig. 1 is that the present invention is the single schematic perspective view of interiors of products structure.
Fig. 2 is that the present invention is single series connection integrated LED chip schematic side view.
Fig. 3 is that the present invention is single series connection integrated LED chip circuit diagram.
Specific embodiment
For the feature of this product is expanded on further, below in conjunction with Figure of description, to primary structure of the invention and reality
Applying method, step are further described.
As shown in figure 1, a kind of modular photodiode packaging, comprising：Through hole is set on substrate 1, and
Not LED crystal particle 2 are set in through hole, epoxy resin 3 is filled between substrate and crystal grain；The lower surface of the substrate is set
There are two pieces of lower conductor layers 4, one of lower conductor layer is connected with the lower surface of not LED crystal particle；The upper surface of substrate sets
Two pieces of upper conductor layers 5 are equipped with, one of upper conductor layer connects not LED crystal particle upper surface；The upper surface of base plate
Two pieces of upper conductor layer tops set a LEDs upside-down mounting diode crystal particle 6, the N poles of flip LED diode crystal particle and not light-emitting diodes
The connected part upper conductor layer connection in pipe crystal grain top, the P poles of flip LED diode crystal particle are connected with remaining upper conductor layer；
The top of substrate is by 7 wrapping and encapsulating of layer of silica gel, two crystal grain and connection circuit；In the two sides of substrate, termination electrode 8, end are set
Electrode connects upper and lower conductor layer；Being set on termination electrode and lower conductor layer has solderability metal level.
The substrate of the epitaxial layer of AlInGaN flip LED chips 6, energy gap of its energy gap higher than light emitting epitaxial layer.It is described fall
The emission wavelength of LED chip 6 is filled between 300nm to 980nm, preferably between 300nm to 550nm, using the integrated of tandem type
AlInGaN LED chips constitute flip-chip.The not LED crystal particle is designed to trapezoid cross section to reduce crystal grain center of gravity,
Prevent crystal grain from rolling, also can set silver projection to increase electric conductivity in surface thereon.The not LED crystal particle with
AlInGaN flip LED chips are connected with parallel circuit.The silica gel 7 is the mixed powder silica gel of fluorescent material.
Its lighting angle of the encapsulating products up to 180 °, using modular integration packaging technology, by protection diode crystal grain
It is enclosed in ceramic substrate, reduces space shared by component, and improve product luminous efficiency, also ensure that product uses peace
Quan Xing, increases it and uses life cycle.
In sum, the present invention provides a kind of modular integrated photodiode encapsulation, by the structure to product and
Manufacturing process is redesigned and optimized, and its optical characteristics is also improved while Product Safety is protected, in LED markets
To be widely used.
The invention is not limited in any way for above-described embodiment, all to be obtained by the way of equivalent or equivalent transformation
Technical scheme, all fall within protection scope of the present invention.
Claims (10)
1. a kind of modular photodiode packaging, it is characterised in that：Through hole is set on substrate (1), and in through hole
It is interior that not LED crystal particle (2) are set, epoxy resin (3) is filled between substrate and crystal grain；The lower surface of the substrate is set
There is lower conductor layer (4), lower conductor layer is connected with the lower surface of not LED crystal particle；The upper surface of substrate is provided with upper conductor
Layer (5), upper conductor layer connects not LED crystal particle upper surface；The upper conductor layer top of the upper surface of base plate sets upside-down mounting
LED diode crystal particles (6), N poles and the part upper conductor being connected above not LED crystal particle of flip LED diode crystal particle
Layer connection, the P poles of flip LED diode crystal particle are connected with remaining upper conductor layer；Wrapped up by layer of silica gel (7) in the top of substrate
Encapsulation crystal grain and upper and lower conductor layer and substrate；Termination electrode (8) is set in the two sides of substrate, termination electrode connects upper and lower conductor
Layer；Being set on termination electrode and lower conductor layer has solderability metal level.
2. a kind of modular photodiode packaging according to claim 1, it is characterised in that：The substrate
(1) it is ceramic material.
3. a kind of modular photodiode packaging according to claim 1, it is characterised in that：It is described not light
Diode crystal particle (2) is and the not luminous semiconductor subassembly with PN junction structure.
4. a kind of modular photodiode packaging according to claim 1, it is characterised in that：The upside-down mounting
LED diode crystal particles（6）The substrate of epitaxial layer, energy gap of its energy gap higher than light emitting epitaxial layer.
5. a kind of modular photodiode packaging according to claim 1, it is characterised in that：The upside-down mounting
LED diode crystal particles（6）Emission wavelength is between 300nm to 980nm.
6. a kind of modular photodiode packaging according to claim 1, it is characterised in that：The upside-down mounting
LED diode crystal particles（6）For the upside-down mounting crystal grain that the integrated LED crystal grain of tandem type is constituted.
7. a kind of modular photodiode packaging according to claim 1, it is characterised in that：The layer of silica gel
（7）It is the mixed powder silica gel of fluorescent material.
8. a kind of modular photodiode packaging according to claim 6, it is characterised in that：The upside-down mounting
LED diode crystal particles（6）For the upside-down mounting crystal grain that the integrated AlInGaN LED grains of tandem type are constituted.
9. a kind of modular photodiode packaging according to claim 1, it is characterised in that：It is described not light
Diode crystal particle（2）It is designed to trapezoid cross section to reduce crystal grain center of gravity, prevents crystal grain from rolling；Or, not LED crystal particle
（2）Upper surface sets silver projection.
10. a kind of modular photodiode packaging according to claim 8, it is characterised in that：It is described not send out
Optical diode grain（2）With flip LED diode crystal particle（6）Connected with parallel circuit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710012879.5A CN106711135A (en) | 2017-01-09 | 2017-01-09 | Modularized photodiode packaging device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710012879.5A CN106711135A (en) | 2017-01-09 | 2017-01-09 | Modularized photodiode packaging device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106711135A true CN106711135A (en) | 2017-05-24 |
Family
ID=58907137
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710012879.5A Pending CN106711135A (en) | 2017-01-09 | 2017-01-09 | Modularized photodiode packaging device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106711135A (en) |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1301399A (en) * | 1998-05-20 | 2001-06-27 | 罗姆股份有限公司 | Reflective sensor |
| TW200802996A (en) * | 2006-06-16 | 2008-01-01 | Shinko Electric Ind Co | Semiconductor device and method of manufacturing semiconductor device |
| CN100362670C (en) * | 2002-05-21 | 2008-01-16 | 罗姆股份有限公司 | Semiconductor device using semiconductor chip |
| US20100133568A1 (en) * | 2008-12-03 | 2010-06-03 | Kabushiki Kaisha Toshiba | Light emitting device and method for manufacturing same |
| CN203644753U (en) * | 2013-11-28 | 2014-06-11 | 丽智电子(昆山)有限公司 | SOT-23 packaging structure |
| CN103959492A (en) * | 2011-12-09 | 2014-07-30 | 日本特殊陶业株式会社 | Wiring board for having light emitting element mounted thereon |
| CN104508811A (en) * | 2012-08-07 | 2015-04-08 | 皇家飞利浦有限公司 | LED package and manufacturing method |
-
2017
- 2017-01-09 CN CN201710012879.5A patent/CN106711135A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1301399A (en) * | 1998-05-20 | 2001-06-27 | 罗姆股份有限公司 | Reflective sensor |
| CN100362670C (en) * | 2002-05-21 | 2008-01-16 | 罗姆股份有限公司 | Semiconductor device using semiconductor chip |
| TW200802996A (en) * | 2006-06-16 | 2008-01-01 | Shinko Electric Ind Co | Semiconductor device and method of manufacturing semiconductor device |
| US20100133568A1 (en) * | 2008-12-03 | 2010-06-03 | Kabushiki Kaisha Toshiba | Light emitting device and method for manufacturing same |
| CN103959492A (en) * | 2011-12-09 | 2014-07-30 | 日本特殊陶业株式会社 | Wiring board for having light emitting element mounted thereon |
| CN104508811A (en) * | 2012-08-07 | 2015-04-08 | 皇家飞利浦有限公司 | LED package and manufacturing method |
| CN203644753U (en) * | 2013-11-28 | 2014-06-11 | 丽智电子(昆山)有限公司 | SOT-23 packaging structure |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20170524 |
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| RJ01 | Rejection of invention patent application after publication |