CN106695478A - Cleavage-preventing processing method for gallium oxide crystals - Google Patents
Cleavage-preventing processing method for gallium oxide crystals Download PDFInfo
- Publication number
- CN106695478A CN106695478A CN201611124171.0A CN201611124171A CN106695478A CN 106695478 A CN106695478 A CN 106695478A CN 201611124171 A CN201611124171 A CN 201611124171A CN 106695478 A CN106695478 A CN 106695478A
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- China
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- workpiece
- rotating speed
- skive
- ceramic disk
- coolant
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/04—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor involving a rotary work-table
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B41/00—Component parts such as frames, beds, carriages, headstocks
- B24B41/06—Work supports, e.g. adjustable steadies
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B55/00—Safety devices for grinding or polishing machines; Accessories fitted to grinding or polishing machines for keeping tools or parts of the machine in good working condition
- B24B55/02—Equipment for cooling the grinding surfaces, e.g. devices for feeding coolant
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/10—Single-purpose machines or devices
- B24B7/16—Single-purpose machines or devices for grinding end-faces, e.g. of gauges, rollers, nuts, piston rings
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
- B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
- B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
Abstract
The invention discloses a cleavage-preventing processing method for gallium oxide crystals. A piece of 2-inch gallium oxide cut single crystal wafer is stuck to the center of a ceramic disk, a 2000# resin diamond grinding wheel is used, cooling liquid is opened, the volume matching of the cooling liquid is pure water to hydrogen peroxide, the diamond grinding wheel rotating speed is started, then, the workpiece rotating speed is started, and when a workpiece arrives at the end position, idling is kept for 60 s, and grinding repairing is carried out on the surface; and then a 10000# resin cerium oxide diamond grinding wheel is used, cooling liquid is opened, the volume matching of the cooling liquid is pure water to hydrogen peroxide, the diamond grinding wheel rotating speed is started, then, the workpiece rotating speed is started, and when the workpiece arrives at the end position, idling is kept for 60 s, the ceramic disk is taken down to be washed after the process is finished. On the premise of guaranteeing the processing efficiency, the problem of crystal cleavage in the processing process is solved, crystal crazing caused in the processing process is prevented, and the crystal wafer surface quality is greatly improved.
Description
Technical field
The present invention devises a kind of anti-cleavage processing method for gallium oxide crystal, belongs to the processing neck of semi-conducting material
Domain.
Background technology
Gallium oxide（β-Ga2O3）It is considered as a kind of new forth generation broad stopband oxide semiconductor material, at room temperature
Energy gap be 4.8-4.9 eV, with electrically conducting transparent and GaN lattice mismatches be small, low cost and other advantages, in deep ultraviolet photoelectricity
There is great application prospect in the fields such as device, LED, power device.
β-Ga2O3 are monoclinic crystal structure, and wherein a axles and c-axis angle is 104 °, is existed（100）With（001）Cleavage surface,
Crystal is easy to be ftractureed along cleavage surface in process.After dicing, wafer surface can leave cutting to gallium oxide crystal
Tool marks and micro-crack, are generally first quickly eliminated tool marks, reduce damage layer thickness and are improved face type using free abrasive grinding technics
Precision, is then mechanically polished using diamond abrasive to it, and finally obtaining not damaged using CMP process puts down
Smoothization surface.During traditional crystal pro cessing, in order to obtain suitable material clearance, it is necessary to apply certain to chip
Pressure, therefore, when being processed to gallium oxide using traditional processing technology, crystal is easy to ftracture, so as to reduce add
Work yield rate.
The content of the invention
In view of the situation of prior art and the deficiency of presence, of the invention to propose that a kind of anti-cleavage for gallium oxide crystal adds
Work method, compared to traditional processing technology, simplifies process, reduces workpiece because of the risk of mobile crushing, is obtained in that more preferably
Wafer thickness uniformity, surface quality and processing efficiency, while can effectively prevent crystal from opening in process
Split.
To achieve the above object, the technical scheme for being used is the present invention：A kind of anti-cleavage for gallium oxide crystal adds
Work method, it is characterised in that step is as follows：
Ceramic disk is heated to 100 degree, yellow wax is uniformly coated with, a piece of 2 inch oxidized gallium cutting single-chips are pasted onto ceramic disk
On center, room temperature is cooled to, the wax of ceramic disk surface residual is cleaned up, open laterally thinning machine, posting gallium oxide
Ceramic disk vacuum suction is in work stage；
The first step, first using 2000# resin diamond grinding wheels, skive outer most edge was adjusted to the center of ceramic disk
1mm, sets technological parameter, and workpiece rotational frequency 150-200r/min, rotary speed direction are clockwise, boart boart wheel speed 300-
400r/min, rotary speed direction are clockwise, 0.5-1 μm of feed speed/min, coolant rate 500ml/min, 30 μm of removal amount；
Coolant is first turned on, coolant volume proportion is pure water：Hydrogen peroxide：Hydrochloric acid=10 of mass fraction 30%:0.5:0.01, altogether
Configuration 20L, directly discharges, and does not recycle, and starts boart boart wheel speed, restarts workpiece rotational frequency, terminates when workpiece is reached
During position, the rotating speed of skive and workpiece keeps constant, and the idle period is 60s, carries out grinding reparation to surface, so
The damage of wafer surface is advantageously reduced, surface quality is improved；
Second step, 10000# resin cerium oxide skives are reused, skive outer most edge was adjusted to ceramic disk
Center 1mm, set technological parameter, workpiece rotational frequency 300-400r/min, rotary speed direction clockwise, skive（2）Rotating speed
600-800r/min, rotary speed direction are clockwise, 0.05-0.1 μm of feed speed/min, coolant rate 800ml/min, removal
10 μm of amount；
Coolant is first turned on, coolant liquid volume proportion is pure water：Hydrogen peroxide：Hydrochloric acid=10 of mass fraction 30%:1:0.01, altogether
Configuration 20L, directly discharges, and does not recycle, and starts boart boart wheel speed, restarts workpiece rotational frequency, terminates when workpiece is reached
During position, the rotating speed of skive and workpiece keeps constant, and the idle period is 60s, and technique removes ceramic disk after terminating
Come, cleaned, reduction process is completed, final measurement, the Ra≤1nm of chip, TTV≤2 μm.
The invention has the advantages that：
Using thinning machine, the skive of unlike material and model, the rotating speed side in adjustment skive and workpiece are mixed
To and rotating ratio, using relatively low feed speed, so as to substantially reduce the risk that chip occurs cleavage.In a word, ensureing to process
On the premise of efficiency, solve the problems, such as Crystal Cleavage in process, and be effectively prevented crystal to send out in process
Raw cracking, substantially increases wafer surface quality.
Brief description of the drawings
Position view when Fig. 1 is skive of the present invention, ceramic disk, single-chip is processed.
Specific embodiment
The specific embodiment of the reduction process is as follows：
A kind of anti-cleavage processing method for gallium oxide crystal, step is as follows：
Ceramic disk 3 is heated to 100 degree, yellow wax is uniformly coated with, a piece of 2 inch oxidized gallium cutting single-chips 1 are pasted onto ceramics
On the center of disk 3, room temperature is cooled to, the wax of the surface residual of ceramic disk 3 is cleaned up, open laterally thinning machine, posting oxidation
The vacuum suction of ceramic disk 3 of gallium is in work stage；
The first step, first using 2000# resin-diamonds skive 2, ceramic disk was adjusted to by the outer most edge of skive 2
3 center 1mm, as shown in figure 1, setting technological parameter, workpiece rotational frequency 150-200r/min, rotary speed direction are clockwise, Buddha's warrior attendant
The rotating speed 300-400r/min of stone sand wheel 2, rotary speed direction are clockwise, 0.5-1 μm of feed speed/min, coolant rate 500ml/
Min, 30 μm of removal amount.
Coolant is first turned on, coolant volume proportion is pure water：Hydrogen peroxide：Hydrochloric acid=10 of mass fraction 30%:0.5:
0.01,20L is configured altogether, directly discharge, do not recycle, start the rotating speed of skive 2, restart workpiece rotational frequency, work as workpiece
When reaching end position, the rotating speed of skive 2 and workpiece keeps constant, and the idle period is 60s, and surface is ground
Repair, so advantageously reduce the damage of wafer surface, improve surface quality.
Second step, 10000# resin cerium oxide skive 2 is reused, the outer most edge of skive 2 was adjusted to
The center 1mm of ceramic disk 3, sets technological parameter, and workpiece rotational frequency 300-400r/min, rotary speed direction are clockwise, skive 2
Rotating speed 600-800r/min, rotary speed direction are clockwise, 0.05-0.1 μm of feed speed/min, coolant rate 800ml/min,
10 μm of removal amount.
Coolant is first turned on, coolant volume proportion is pure water：Hydrogen peroxide：Hydrochloric acid=10 of mass fraction 30%:1:0.01,
20L is configured altogether, is directly discharged, do not recycled, start the rotating speed of skive 2, restart workpiece rotational frequency, tied when workpiece is reached
During beam position, the rotating speed of skive 2 and workpiece keeps constant, and the idle period is 60s, technique terminate after by ceramic disk 3
Take off, cleaned, reduction process is completed, final measurement, the Ra≤1nm of chip, TTV≤2 μm.
In the first step and second step, it is to prevent gallium oxide along solution that certain density hydrogen peroxide is added toward coolant
Reason face crushes, and wafer surface can chemically react with coolant, generates softer novel substance, and skive 2 is to newly-generated
Material be removed, and the damage to gallium oxide surface is smaller, Ra≤1nm, TTV≤2 μm, can greatly reduce subsequent chemistry
The removal amount of mechanical polishing, reduces the risk of chip cleavage.
Claims (1)
1. a kind of anti-cleavage processing method for gallium oxide crystal, it is characterised in that step is as follows：
By ceramic disk（3）100 degree are heated to, yellow wax is uniformly coated with, by a piece of 2 inch oxidized gallium cutting single-chips（1）It is pasted onto
Ceramic disk（3）On center, room temperature is cooled to, by ceramic disk（3）The wax of surface residual is cleaned up, and opens laterally thinning machine,
Post the ceramic disk of gallium oxide（3）Vacuum suction is in work stage；
The first step, first uses 2000# resin diamond grinding wheels（2）, by skive（2）Outer most edge was adjusted to ceramic disk
（3）Center 1mm, set technological parameter, workpiece rotational frequency 150-200r/min, rotary speed direction are clockwise, skive（2）
Rotating speed 300-400r/min, rotary speed direction are clockwise, 0.5-1 μm of feed speed/min, and coolant rate 500ml/min goes
Except amount 30 μm；
Coolant is first turned on, coolant volume proportion is pure water：Hydrogen peroxide：Hydrochloric acid=10 of mass fraction 30%:0.5:0.01, altogether
Configuration 20L, directly discharges, and does not recycle, and starts skive（2）Rotating speed, restarts workpiece rotational frequency, is tied when workpiece is reached
During beam position, skive（2）Keep constant with the rotating speed of workpiece, the idle period is 60s, carrying out grinding to surface repaiies
It is multiple, the damage of wafer surface is so advantageously reduced, improve surface quality；
Second step, reuse 10000# resin cerium oxide skives（2）, by skive（2）Outer most edge was adjusted to
Ceramic disk（3）Center 1mm, set technological parameter, workpiece rotational frequency 300-400r/min, rotary speed direction clockwise, boart boart
Wheel（2）Rotating speed 600-800r/min, rotary speed direction are clockwise, 0.05-0.1 μm of feed speed/min, coolant rate
800ml/min, 10 μm of removal amount；
Coolant is first turned on, coolant liquid volume proportion is pure water：Hydrogen peroxide：Hydrochloric acid=10 of mass fraction 30%:1:0.01, altogether
Configuration 20L, directly discharges, and does not recycle, and starts skive（2）Rotating speed, restarts workpiece rotational frequency, is tied when workpiece is reached
During beam position, skive（2）Keep constant with the rotating speed of workpiece, the idle period is 60s, technique terminate after by ceramic disk
（3）Take off, cleaned, reduction process is completed, final measurement, the Ra≤1nm of chip, TTV≤2 μm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611124171.0A CN106695478B (en) | 2016-12-08 | 2016-12-08 | A kind of anti-cleavage processing method for gallium oxide crystal |
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| CN201611124171.0A CN106695478B (en) | 2016-12-08 | 2016-12-08 | A kind of anti-cleavage processing method for gallium oxide crystal |
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| CN106695478A true CN106695478A (en) | 2017-05-24 |
| CN106695478B CN106695478B (en) | 2018-07-31 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110640552A (en) * | 2019-09-12 | 2020-01-03 | 大连理工大学 | Processing method of easily-cleaved semiconductor crystal |
| CN110640565A (en) * | 2019-09-12 | 2020-01-03 | 大连理工大学 | Gallium oxide anti-cleavage processing method based on control force |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101125416A (en) * | 2007-09-14 | 2008-02-20 | 中国科学院上海光学精密机械研究所 | Polishing method for zinc oxide single crystal substrate level substrate |
| CN102097288A (en) * | 2009-12-14 | 2011-06-15 | 北大方正集团有限公司 | Rework method for back-side metal process |
| JP2013094924A (en) * | 2011-11-04 | 2013-05-20 | Okamoto Machine Tool Works Ltd | Grinding method for ceramic substrate with through electrode |
| CN204108764U (en) * | 2014-09-15 | 2015-01-21 | 平凉市老兵科技研发有限公司 | For improving the device of Manual-automatic integrated thinning single surface machining accuracy |
| CN105081893A (en) * | 2015-05-13 | 2015-11-25 | 北京通美晶体技术有限公司 | Ultrathin Ge single crystal substrate material and preparation method thereof |
| CN106064326A (en) * | 2016-08-01 | 2016-11-02 | 中国电子科技集团公司第四十六研究所 | A kind of finishing method for gallium antimonide monocrystalline sheet |
-
2016
- 2016-12-08 CN CN201611124171.0A patent/CN106695478B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101125416A (en) * | 2007-09-14 | 2008-02-20 | 中国科学院上海光学精密机械研究所 | Polishing method for zinc oxide single crystal substrate level substrate |
| CN102097288A (en) * | 2009-12-14 | 2011-06-15 | 北大方正集团有限公司 | Rework method for back-side metal process |
| JP2013094924A (en) * | 2011-11-04 | 2013-05-20 | Okamoto Machine Tool Works Ltd | Grinding method for ceramic substrate with through electrode |
| CN204108764U (en) * | 2014-09-15 | 2015-01-21 | 平凉市老兵科技研发有限公司 | For improving the device of Manual-automatic integrated thinning single surface machining accuracy |
| CN105081893A (en) * | 2015-05-13 | 2015-11-25 | 北京通美晶体技术有限公司 | Ultrathin Ge single crystal substrate material and preparation method thereof |
| CN106064326A (en) * | 2016-08-01 | 2016-11-02 | 中国电子科技集团公司第四十六研究所 | A kind of finishing method for gallium antimonide monocrystalline sheet |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110640552A (en) * | 2019-09-12 | 2020-01-03 | 大连理工大学 | Processing method of easily-cleaved semiconductor crystal |
| CN110640565A (en) * | 2019-09-12 | 2020-01-03 | 大连理工大学 | Gallium oxide anti-cleavage processing method based on control force |
| CN110640552B (en) * | 2019-09-12 | 2020-11-06 | 大连理工大学 | Processing method of easily-cleaved semiconductor crystal |
| CN110640565B (en) * | 2019-09-12 | 2021-03-26 | 大连理工大学 | Gallium oxide anti-cleavage processing method based on control force |
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| Publication number | Publication date |
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| CN106695478B (en) | 2018-07-31 |
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