CN106681418B - Input circuit with wide input voltage range and adjustable threshold voltage - Google Patents
Input circuit with wide input voltage range and adjustable threshold voltage Download PDFInfo
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- CN106681418B CN106681418B CN201510758379.7A CN201510758379A CN106681418B CN 106681418 B CN106681418 B CN 106681418B CN 201510758379 A CN201510758379 A CN 201510758379A CN 106681418 B CN106681418 B CN 106681418B
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- input
- pressure nmos
- high pressure
- voltage
- module
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
- G05F1/565—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
Abstract
The present invention relates to a kind of input circuits with wide input voltage range and adjustable threshold voltage, including voltage clamp module (1), pull-down current drain circuit module (2) and peripheral circuit module；The pull-down current drain circuit module (2) while being connected with voltage clamp module (1), the peripheral circuit module and the late-class circuit module, the voltage clamp module (1) and the pull-down current drain circuit module (2) are connected with the input terminal of the input circuit；The pull-down current drain circuit module (2) includes the first high pressure NMOS pipe (MN1) and low pressure NMOS tube (MN2).Using the input circuit with wide input voltage range and adjustable threshold voltage of this kind of structure, input voltage is enabled to meet the wide area requirement from low pressure to high pressure, and realizes that input threshold value is adjustable, it is simple in structure, it has wide range of applications.
Description
Technical field
The present invention relates to field of circuit technology more particularly to input circuits, and in particular to one kind having wide input voltage model
Enclose the input circuit with adjustable threshold voltage.
Background technology
For the supply voltage of circuit system from low pressure to high pressure, span is very big.It, can be right when prime circuit power voltage is low
The threshold voltage of input circuit proposes strict requirements；When prime circuit power voltage be it is high when, it is desirable to input circuit have compared with
High pressure voltage.In conventional MOS process, high pressure, while its unlatching can be born between the grid G and source S of high-voltage MOS pipe
Voltage is higher；High pressure cannot be born between the grid G and source S of low pressure metal-oxide-semiconductor, while its cut-in voltage is relatively low.Below
The prior art using conventional MOS process will be enumerated.
Scheme one：Fig. 1 is a scheme of the prior art.MN1 pipes therein are a high pressure NMOS pipes, and I is on one
Draw constant-current source.
When the drain saturation current of MN1 pipes is equal to the electric current of pull-up constant-current source, OUT terminal level will be overturn.Cause
This input threshold voltage VINIt is determined by following formula：
It can obtain
In formula, I is pull-up constant current source size, and K is transconductance parameters, VTHIt is the cut-in voltage of high pressure NMOS pipe, W and L difference
It is the width and length of metal-oxide-semiconductor.
The program can bear higher input voltage, but not be suitable for the feelings that front stage circuits supply voltage is low pressure
Condition.Example：When the supply voltage of front stage circuits is 3.3V, it may require that the input threshold voltage of input circuit is less than 2.4V.Scheme
In one, VTHRepresentative value be 2V, then input threshold valueIt is difficult to ensureIt is defeated to meet
Enter threshold value specification.
Scheme two：Fig. 2 is another scheme of the prior art.MN2 pipes therein are a low pressure NMOS tubes, and I is one
Pull up constant-current source.
Similarly, when the drain saturation current of MN2 pipes is equal to the electric current of pull-up constant-current source, OUT terminal level will turn over
Turn.Therefore input threshold voltage VINIt is determined by following formula：
It can obtain
In formula, I is pull-up constant current source size, and K is transconductance parameters, VTLIt is the cut-in voltage of low pressure NMOS tube, W and L difference
It is the width and length of metal-oxide-semiconductor.
The program is suitable for the case where prime supply voltage is low pressure.Example：When the supply voltage of front stage circuits is 3.3V,
It may require that the input threshold voltage of input circuit is less than 2.4V.In scheme two, VTLRepresentative value be 0.8V, then input threshold value Only need to be less than 1.6V, you can meet input threshold value specification.
But due to the use of low-voltage tube, grid source cannot bear high pressure, and which limits the ranges of input voltage.
To sum up, in the prior art, it is low application that scheme one, which is not suitable for input voltage, and scheme two is not suitable for input electricity
It is limited that the shortcomings that it is high application to press, the prior art can be summarized as input voltage range.
Invention content
The purpose of the present invention is overcoming the above-mentioned prior art, provides and a kind of input voltage is enabled to meet from low pressure
To the adjustable input electricity with wide input voltage range and adjustable threshold voltage of wide range and realization input threshold value of high pressure
Road.
To achieve the goals above or other purposes, of the invention that there is wide input voltage range and adjustable threshold voltage
Input circuit there is following constitute：
The input circuit with wide input voltage range and adjustable threshold voltage, is mainly characterized by, the input
Circuit includes voltage clamp module, pull-down current drain circuit module and peripheral circuit module；The pull-down current drain circuit
Module is connected with the voltage clamp module, the peripheral circuit module and late-class circuit module simultaneously, described
Voltage clamp module and the pull-down current drain circuit module are connected with the input terminal of the input circuit.
Further, the pull-down current drain circuit module includes the first high pressure NMOS pipe MN1 and low pressure NMOS tube
The draining of MN2, the first high pressure NMOS pipe MN1, the draining of the low pressure NMOS tube MN2, the peripheral circuit mould
Block and the input terminal of the late-class circuit module are connected, the source electrode and low pressure of the first high pressure NMOS pipe MN1
The source electrode of NMOS tube MN2 is connected after being connected with the voltage clamp module, the grid of the first high pressure NMOS pipe MN1
Pole is connected with the input terminal of the input circuit and the voltage clamp module, the low pressure NMOS tube MN2's
Grid is connected with the voltage clamp module 1.
Further, the voltage clamp module includes the second high pressure NMOS pipe MN3 and the first Zener Z1；Institute
Grid and the input circuit of the drain electrode of the second high pressure NMOS pipe MN3 stated with the first high pressure NMOS pipe MN1
Input terminal be connected, the reverse input end of the source electrode of the second high pressure NMOS pipe MN3 and the first Zener Z1
And the grid of the low pressure NMOS tube MN2 is connected；The positive input of the first Zener Z1, described first
The source electrode of high pressure NMOS pipe MN1 and the source grounding of low pressure NMOS tube MN2；The grid of the second high pressure NMOS pipe MN3
Pole is connected with a DC offset voltage.
Still further, the peripheral circuit module includes a pull-up constant-current source, the first high pressure NMOS pipe MN1
Drain, the input of the draining of the low pressure NMOS tube MN2, the pull-up constant-current source and the late-class circuit module
End is connected.
Still further, the peripheral circuit module further includes a phase inverter, the first high pressure NMOS pipe (MN1)
Drain, the draining of the low pressure NMOS tube (MN2), the pull-up constant-current source and the phase inverter input terminal phase
Connection, the output end of the phase inverter are connected with the input terminal of late-class circuit module.
Further, the voltage clamp module further includes a NMOS tube MN4 and the second Zener Z2；Described
The source electrode of NMOS tube MN4 is grounded, and the drain electrode of the grid of the NMOS tube MN4 and the NMOS tube MN4 is with described the
The positive input of two Zener Z2 is connected, the reverse input end of the second Zener Z2 and second high pressure
The grid of NMOS tube MN3 is connected.
Still further, the peripheral circuit module includes resistance R, third Zener Z3, the first PMOS tube MP1,
Two PMOS tube MP2；The first end of the resistance R is grounded, the second end of the resistance R, the third Zener Z3
The grid of positive input, the grid of the first PMOS tube MP1 and the second PMOS tube MP2 is connected, described
The reverse input end of third Zener Z3, the source electrode of the first PMOS tube MP1, the second PMOS tube MP2 source electrode with
External power supply is connected, and the drain electrode of the first PMOS tube MP1 is connected with the reverse input end of the second Zener Z2
It connects, the draining of the second PMOS tube MP2, the drain electrode of the first high pressure NMOS pipe MN1 and low pressure NMOS tube MN2
Drain electrode is connected with the late-class circuit module.
The invention has the advantages that use in the invention with wide input voltage range and adjustable threshold voltage
Input circuit enables input voltage meet the wide area requirement from low pressure to high pressure, and realizes that input threshold value is adjustable, structure letter
It is single, it has wide range of applications.
Description of the drawings
Fig. 1 is the structural schematic diagram of the input circuit in prior art one.
Fig. 2 is the structural schematic diagram of the input circuit in prior art two.
Fig. 3 is the structural schematic diagram of the input circuit in the specific embodiment of the present invention.
Fig. 4 is the structural schematic diagram of the input circuit in the specific embodiment of the present invention.
Specific implementation mode
In order to more clearly describe the technology contents of the present invention, carried out with reference to specific embodiment further
Description.
A kind of adjustable input circuit of wide input voltage range and threshold voltage disclosed by the invention is based on routine MOS works
The different feature of metal-oxide-semiconductor cut-in voltage in skill, devises a kind of new input circuit, and input voltage is suitable for from low pressure to high pressure
Wide scope, and realize input threshold voltage it is adjustable.Wherein input threshold voltage refers to defeated when output level is overturn
Enter voltage value.
It please refers to shown in Fig. 3, is the structural schematic diagram of the input circuit in one embodiment of the invention, should have wide input
The input circuit of voltage range and adjustable threshold voltage, including voltage clamp module 1, pull-down current drain circuit module 2 and outer
Enclose circuit module；The pull-down current drain circuit module 2 simultaneously with the voltage clamp module 1, the peripheral circuit
Module and late-class circuit module are connected, and the voltage clamp module 1 and the pull-down current drain circuit module 2 are equal
It is connected with the input terminal of the input circuit.Wherein voltage clamp module 1 includes a first Zener Z1, one second
High pressure NMOS pipe MN3.The voltage stabilizing value of first Zener Z1 is set as VZ, the cut-in voltage of the second high pressure NMOS pipe MN3 is set as VT.Institute
The drain electrode of the second high pressure NMOS pipe MN3 stated is connected with the input terminal of the grid of the first high pressure NMOS pipe MN1 and input circuit
It connects, the source electrode of the second high pressure NMOS pipe MN3 and the reverse input end of the first Zener Z1 and described low
The grid of pressure NMOS tube MN2 is connected；The positive input of the first Zener Z1, the first high pressure NMOS pipe
The source electrode of MN1 and the source grounding of low pressure NMOS tube MN2；The grid and a direct current of the second high pressure NMOS pipe MN3
Bias voltage is connected.
Pull-down current drain circuit module 2 includes a first high pressure NMOS pipe MN1 and a low pressure NMOS tube MN2, described
The draining of the first high pressure NMOS pipe MN1, the draining of the low pressure NMOS tube MN2, the peripheral circuit module and institute
The input terminal for the late-class circuit module stated is connected, the source electrode and low pressure NMOS tube MN2 of the first high pressure NMOS pipe MN1
Source electrode be connected after be connected with the voltage clamp module 1, the grid of the first high pressure NMOS pipe MN1 with it is described
Input circuit input terminal and the voltage clamp module 1 be connected, the grid of the low pressure NMOS tube MN2 and institute
The voltage clamp module 1 stated is connected；Wherein the breadth length ratio of MN1 is X times of MN2, and X is the integer more than or equal to 1.Wherein MN1
Cut-in voltage be VTH, the cut-in voltage of MN2 is VTL, VTH>VTL。
The peripheral circuit module includes a pull-up constant-current source, and the first high pressure NMOS pipe MN1's drains, is described
The draining of low pressure NMOS tube MN2, the pull-up constant-current source and the late-class circuit module input terminal be connected；
In one kind more preferably embodiment, the peripheral circuit module further includes a phase inverter, first high pressure NMOS
The draining of pipe MN1, the draining of the low pressure NMOS tube MN2, the input of the pull-up constant-current source and the phase inverter
End is connected, and the output end of the phase inverter is connected with the input terminal of late-class circuit module.
The course of work of above-mentioned input circuit is：
P1 node voltages VP1It is a DC offset voltage.VP1Size the second high pressure NMOS pipe MN3 need to be made just normally opened
It opens, ensures V againP1-VTSize will not puncture Zener Z1.P3 nodes level is identical as the ends IN level, but the height electricity of P3
Open width value is less than V by the first Zener Z1 clampsZ, play the gate terminal (ends G) and source terminal (S of protection low pressure NMOS tube MN2
End) effect.
When OUT terminal level is overturn, it is known that input threshold value VINMore than VTL, it is less than VTH, therefore the first high pressure NMOS pipe
MN1 is operated in sub-threshold region, and low pressure NMOS tube MN2 is operated in saturation region, can obtain formula：
ID1+ID2=I
I in formula (1)D0It is a parameter related with technique, n is the sub-threshold slope factor, and kT/q is that a voltage is normal
Number, K is transconductance parameters, and W and L are the width and length of low pressure NMOS tube MN2, and the above parameter belongs to known quantity；In formula not
The amount of knowing has VINAnd X, therefore V can be obtainedINThe function expression about X can adjust input electricity by adjusting the value of X
The threshold voltage V of line structureIN。
It please refers to shown in Fig. 4, is the structural schematic diagram of the input circuit in one embodiment of the invention, in based on Fig. 3
Input circuit basic structure on, to the concrete structure of the peripheral circuit module and the voltage clamp module 1 into
Restriction is gone, in a preferred embodiment, the voltage clamp module 1 further includes a NMOS tube MN4 and second
Zener Z2；The source electrode of the NMOS tube MN4 is grounded, the leakage of the grid of the NMOS tube MN4 and the NMOS tube MN4
Extremely it is connected with the positive input of the second Zener Z2, the reverse input end of the second Zener Z2 and institute
The grid of the second high pressure NMOS pipe MN3 stated is connected；Correspondingly, in a preferred embodiment, the periphery electricity
Road module includes resistance R, third Zener Z3, the first PMOS tube MP1, the second PMOS tube MP2；The first end of the resistance R
Ground connection, the second end of the resistance R, the positive input of the third Zener Z3, the first PMOS tube MP1
The grid of grid and the second PMOS tube MP2 are connected, the reverse input end of the third Zener Z3, described
The source electrode of first PMOS tube MP1, the second PMOS tube MP2 source electrode be connected with external power supply, the first PMOS tube MP1
Drain electrode be connected with the reverse input end of the second Zener Z2, the second PMOS tube MP2's drains, is described
The drain electrode of first high pressure NMOS pipe MN1 and the drain electrode of low pressure NMOS tube MN2 are connected with late-class circuit module；It is specific
Operation principle is similar with the operation principle of input circuit shown in Fig. 3, and details are not described herein.
The input circuit with wide input voltage range and adjustable threshold voltage in the invention is used, input voltage is enabled
Meet the wide range from low pressure to high pressure, and realizes that input threshold value is adjustable, it is simple in structure, it has wide range of applications.
In this description, the present invention is described with reference to its specific embodiment.But it is clear that can still make
Various modifications and alterations are without departing from the spirit and scope of the invention.Therefore, the description and the appended drawings should be considered as illustrative
And not restrictive.
Claims (6)
1. a kind of input circuit with wide input voltage range and adjustable threshold voltage, which is characterized in that the input electricity
Road includes voltage clamp module (1), pull-down current drain circuit module (2) and peripheral circuit module；The pull-down current leakage
Circuit module (2) while being connected with voltage clamp module (1), the peripheral circuit module and the late-class circuit module
It connects, the voltage clamp module (1) and the pull-down current drain circuit module (2) are defeated with the input circuit
Enter end to be connected；The pull-down current drain circuit module (2) includes the first high pressure NMOS pipe (MN1) and low pressure NMOS tube
(MN2), the draining of the first high pressure NMOS pipe (MN1), the draining of the low pressure NMOS tube (MN2), the periphery
Circuit module and the input terminal of the late-class circuit module are connected, the source electrode of the first high pressure NMOS pipe (MN1)
And the source electrode of low pressure NMOS tube (MN2) be connected after be connected with the ground terminal of the voltage clamp module (1), it is described
The input terminal and the voltage clamp module (1) of the grid of first high pressure NMOS pipe (MN1) and the input circuit
Input terminal is connected, wherein the input terminal of the voltage clamp module (1) is connected with the input terminal of the input circuit
It connects, the grid of the low pressure NMOS tube (MN2) is connected with the first output end of the voltage clamp module (1).
2. the input circuit according to claim 1 with wide input voltage range and adjustable threshold voltage, feature exist
In the voltage clamp module (1) includes the second high pressure NMOS pipe (MN3) and the first Zener (Z1)；Described second
The drain electrode of high pressure NMOS pipe (MN3) and the grid of the first high pressure NMOS pipe (MN1) and the input circuit it is defeated
Enter end to be connected, wherein be made of the voltage clamp module (1) the drain electrode of the second high pressure NMOS pipe (MN3)
Input terminal, the reverse input end of the source electrode of the second high pressure NMOS pipe (MN3) and first Zener (Z1) and
The grid of the low pressure NMOS tube (MN2) is connected, wherein the source electrode by the second high pressure NMOS pipe (MN3) and institute
The reverse input end for the first Zener (Z1) stated collectively forms the first output end of the voltage clamp module (1)；It is described
The positive input of the first Zener (Z1), the first high pressure NMOS pipe (MN1) source electrode and low pressure NMOS tube
(MN2) source grounding, wherein the positive input of first Zener (Z1) constitutes the voltage clamp module
(1) ground terminal；The grid of the second high pressure NMOS pipe (MN3) is connected with a DC offset voltage.
3. the input circuit according to claim 2 with wide input voltage range and adjustable threshold voltage, feature exist
In the peripheral circuit module includes a pull-up constant-current source, and the first high pressure NMOS pipe (MN1) drains, is described
The input terminal of the draining of low pressure NMOS tube (MN2), the pull-up constant-current source and the late-class circuit module is connected.
4. the input circuit according to claim 3 with wide input voltage range and adjustable threshold voltage, feature exist
In the peripheral circuit module further includes a phase inverter, the draining of the first high pressure NMOS pipe (MN1), described low
The input terminal of pressure NMOS tube the draining of (MN2), the pull-up constant-current source and the phase inverter is connected, the reverse phase
The output end of device is connected with the input terminal of late-class circuit module.
5. the input circuit according to claim 2 with wide input voltage range and adjustable threshold voltage, feature exist
In the voltage clamp module (1) further includes a NMOS tube MN4 and the second Zener (Z2)；The NMOS tube MN4's
Source electrode is grounded, the drain electrode of the grid of the NMOS tube MN4 and the NMOS tube MN4 with second Zener (Z2)
Positive input be connected, the reverse input end of second Zener (Z2) and the second high pressure NMOS pipe
(MN3) grid is connected.
6. the input circuit according to claim 5 with wide input voltage range and adjustable threshold voltage, feature exist
In the peripheral circuit module includes resistance (R), third Zener (Z3), the first PMOS tube (MP1), the second PMOS tube
(MP2)；The first end of the resistance (R) is grounded, the second end of the resistance (R), the third Zener (Z3)
The grid of positive input, the grid of first PMOS tube (MP1) and second PMOS tube (MP2) is connected,
The reverse input end of the third Zener (Z3), the source electrode of first PMOS tube (MP1), the second PMOS tube (MP2)
Source electrode be connected with external power supply, drain electrode and second Zener (Z2) of first PMOS tube (MP1)
Reverse input end is connected, the draining of second PMOS tube (MP2), the drain electrode of the first high pressure NMOS pipe (MN1)
And the drain electrode of low pressure NMOS tube (MN2) is connected with the late-class circuit module.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510758379.7A CN106681418B (en) | 2015-11-10 | 2015-11-10 | Input circuit with wide input voltage range and adjustable threshold voltage |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510758379.7A CN106681418B (en) | 2015-11-10 | 2015-11-10 | Input circuit with wide input voltage range and adjustable threshold voltage |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106681418A CN106681418A (en) | 2017-05-17 |
| CN106681418B true CN106681418B (en) | 2018-10-09 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510758379.7A Active CN106681418B (en) | 2015-11-10 | 2015-11-10 | Input circuit with wide input voltage range and adjustable threshold voltage |
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| CN (1) | CN106681418B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113031691B (en) * | 2021-03-15 | 2022-08-16 | 江苏硅国微电子有限公司 | Wide-input wide-output depletion tube reference voltage source |
| CN113162415B (en) * | 2021-05-08 | 2024-03-15 | 上海爻火微电子有限公司 | Input/output management circuit of power supply and electronic equipment |
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Address after: 214135 -6, Linghu Avenue, Wuxi Taihu international science and Technology Park, Wuxi, Jiangsu, China, 180 Patentee after: China Resources micro integrated circuit (Wuxi) Co., Ltd Address before: No.180-22, Linghu Avenue, Taihu International Science and Technology Park, Wuxi, Jiangsu 214135 Patentee before: WUXI CHINA RESOURCES SEMICO Co.,Ltd. |
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