CN106663598B - 用于去除在外延生长期间形成的核的方法 - Google Patents
用于去除在外延生长期间形成的核的方法 Download PDFInfo
- Publication number
- CN106663598B CN106663598B CN201680000867.4A CN201680000867A CN106663598B CN 106663598 B CN106663598 B CN 106663598B CN 201680000867 A CN201680000867 A CN 201680000867A CN 106663598 B CN106663598 B CN 106663598B
- Authority
- CN
- China
- Prior art keywords
- semiconductor
- method described
- semiconductor structures
- semiconductor structure
- subset
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
- H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
- H10P50/692—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their composition, e.g. multilayer masks or materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/27—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/60—Wet etching
- H10P50/64—Wet etching of semiconductor materials
- H10P50/642—Chemical etching
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P70/00—Cleaning of wafers, substrates or parts of devices
- H10P70/20—Cleaning during device manufacture
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P70/00—Cleaning of wafers, substrates or parts of devices
- H10P70/50—Cleaning of wafers, substrates or parts of devices characterised by the part to be cleaned
Landscapes
- Recrystallisation Techniques (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Weting (AREA)
- Thin Film Transistor (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201562165816P | 2015-05-22 | 2015-05-22 | |
| US62/165,816 | 2015-05-22 | ||
| US15/051,362 US9378950B1 (en) | 2015-05-22 | 2016-02-23 | Methods for removing nuclei formed during epitaxial growth |
| US15/051,362 | 2016-02-23 | ||
| PCT/US2016/033783 WO2016191371A1 (en) | 2015-05-22 | 2016-05-23 | Methods for removing nuclei formed during epitaxial growth |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106663598A CN106663598A (zh) | 2017-05-10 |
| CN106663598B true CN106663598B (zh) | 2018-08-07 |
Family
ID=56136460
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201680000867.4A Active CN106663598B (zh) | 2015-05-22 | 2016-05-23 | 用于去除在外延生长期间形成的核的方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US9378950B1 (cg-RX-API-DMAC7.html) |
| EP (2) | EP3608944A1 (cg-RX-API-DMAC7.html) |
| JP (1) | JP6787786B2 (cg-RX-API-DMAC7.html) |
| KR (2) | KR102424567B1 (cg-RX-API-DMAC7.html) |
| CN (1) | CN106663598B (cg-RX-API-DMAC7.html) |
| WO (1) | WO2016191371A1 (cg-RX-API-DMAC7.html) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10256093B2 (en) * | 2015-11-30 | 2019-04-09 | Alliance For Sustainable Energy, Llc | Selective area growth of semiconductors using patterned sol-gel materials |
| US10366884B1 (en) * | 2018-11-08 | 2019-07-30 | Stratio | Methods for forming a germanium island using selective epitaxial growth and a sacrificial filling layer |
| KR102763596B1 (ko) | 2019-03-25 | 2025-02-10 | 삼성전자주식회사 | 반도체 소자 |
| FR3128819B1 (fr) * | 2021-11-02 | 2023-09-22 | Commissariat Energie Atomique | Procédé de traitement de surface |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4910164A (en) * | 1988-07-27 | 1990-03-20 | Texas Instruments Incorporated | Method of making planarized heterostructures using selective epitaxial growth |
| JPH04188719A (ja) * | 1990-11-21 | 1992-07-07 | Mitsubishi Electric Corp | 選択埋込み成長法 |
| JPH0521357A (ja) * | 1991-07-10 | 1993-01-29 | Fujitsu Ltd | 半導体装置の製造方法 |
| JPH08203833A (ja) * | 1995-01-20 | 1996-08-09 | Hitachi Ltd | 半導体装置の製造方法 |
| US5981400A (en) * | 1997-09-18 | 1999-11-09 | Cornell Research Foundation, Inc. | Compliant universal substrate for epitaxial growth |
| US8278176B2 (en) * | 2006-06-07 | 2012-10-02 | Asm America, Inc. | Selective epitaxial formation of semiconductor films |
| WO2010061615A1 (ja) * | 2008-11-28 | 2010-06-03 | 住友化学株式会社 | 半導体基板の製造方法、半導体基板、電子デバイスの製造方法、および反応装置 |
| SG169921A1 (en) * | 2009-09-18 | 2011-04-29 | Taiwan Semiconductor Mfg | Improved fabrication and structures of crystalline material |
| JP2011108692A (ja) * | 2009-11-12 | 2011-06-02 | Ulvac Japan Ltd | Ｃｍｏｓデバイス用シリコンウェハの製造方法 |
| CN103367553B (zh) * | 2012-03-28 | 2016-01-20 | 清华大学 | 外延衬底的制备方法 |
| JP5931780B2 (ja) * | 2013-03-06 | 2016-06-08 | 東京エレクトロン株式会社 | 選択エピタキシャル成長法および成膜装置 |
| JP2014181170A (ja) * | 2013-03-21 | 2014-09-29 | Mitsubishi Chemicals Corp | 半導体バルク結晶および半導体バルク結晶の製造方法 |
-
2016
- 2016-02-23 US US15/051,362 patent/US9378950B1/en active Active
- 2016-05-23 JP JP2016557040A patent/JP6787786B2/ja active Active
- 2016-05-23 KR KR1020187006394A patent/KR102424567B1/ko active Active
- 2016-05-23 CN CN201680000867.4A patent/CN106663598B/zh active Active
- 2016-05-23 EP EP19188206.7A patent/EP3608944A1/en active Pending
- 2016-05-23 KR KR1020177005543A patent/KR20170029638A/ko not_active Ceased
- 2016-05-23 WO PCT/US2016/033783 patent/WO2016191371A1/en not_active Ceased
- 2016-05-23 EP EP16750355.6A patent/EP3111466A4/en not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| EP3608944A1 (en) | 2020-02-12 |
| JP2018515904A (ja) | 2018-06-14 |
| WO2016191371A1 (en) | 2016-12-01 |
| EP3111466A1 (en) | 2017-01-04 |
| EP3111466A4 (en) | 2017-03-29 |
| US9378950B1 (en) | 2016-06-28 |
| JP6787786B2 (ja) | 2020-11-18 |
| KR20180029091A (ko) | 2018-03-19 |
| KR102424567B1 (ko) | 2022-07-25 |
| CN106663598A (zh) | 2017-05-10 |
| KR20170029638A (ko) | 2017-03-15 |
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Legal Events
| Date | Code | Title | Description |
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| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| TA01 | Transfer of patent application right | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20171124 Address after: Seoul, South Kerean Applicant after: Esprit Technology Co. Ltd. Address before: American California Applicant before: Esprit Technology Co. Ltd. |
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