KR102424567B1 - 에피택셜 성장 동안 형성되는 핵을 제거 방법 - Google Patents

에피택셜 성장 동안 형성되는 핵을 제거 방법 Download PDF

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KR102424567B1
KR102424567B1 KR1020187006394A KR20187006394A KR102424567B1 KR 102424567 B1 KR102424567 B1 KR 102424567B1 KR 1020187006394 A KR1020187006394 A KR 1020187006394A KR 20187006394 A KR20187006394 A KR 20187006394A KR 102424567 B1 KR102424567 B1 KR 102424567B1
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group
semiconductor structures
semiconductor
substrate
etching
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Korean (ko)
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KR20180029091A (ko
Inventor
이제형
나열
김영식
정우식
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스트라티오 인코포레이티드
주식회사 스트라티오코리아
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    • H01L21/30604—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H10P50/692—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their composition, e.g. multilayer masks or materials
    • H01L21/02057—
    • H01L21/02082—
    • H01L21/02636—
    • H01L21/3081—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/27—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/50—Cleaning of wafers, substrates or parts of devices characterised by the part to be cleaned

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  • Recrystallisation Techniques (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Weting (AREA)
  • Thin Film Transistor (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020187006394A 2015-05-22 2016-05-23 에피택셜 성장 동안 형성되는 핵을 제거 방법 Active KR102424567B1 (ko)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US201562165816P 2015-05-22 2015-05-22
US62/165,816 2015-05-22
US15/051,362 US9378950B1 (en) 2015-05-22 2016-02-23 Methods for removing nuclei formed during epitaxial growth
US15/051,362 2016-02-23
PCT/US2016/033783 WO2016191371A1 (en) 2015-05-22 2016-05-23 Methods for removing nuclei formed during epitaxial growth
KR1020177005543A KR20170029638A (ko) 2015-05-22 2016-05-23 에피택셜 성장 동안 형성되는 핵을 제거 방법

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020177005543A Division KR20170029638A (ko) 2015-05-22 2016-05-23 에피택셜 성장 동안 형성되는 핵을 제거 방법

Publications (2)

Publication Number Publication Date
KR20180029091A KR20180029091A (ko) 2018-03-19
KR102424567B1 true KR102424567B1 (ko) 2022-07-25

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KR1020187006394A Active KR102424567B1 (ko) 2015-05-22 2016-05-23 에피택셜 성장 동안 형성되는 핵을 제거 방법
KR1020177005543A Ceased KR20170029638A (ko) 2015-05-22 2016-05-23 에피택셜 성장 동안 형성되는 핵을 제거 방법

Family Applications After (1)

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KR1020177005543A Ceased KR20170029638A (ko) 2015-05-22 2016-05-23 에피택셜 성장 동안 형성되는 핵을 제거 방법

Country Status (6)

Country Link
US (1) US9378950B1 (cg-RX-API-DMAC7.html)
EP (2) EP3608944A1 (cg-RX-API-DMAC7.html)
JP (1) JP6787786B2 (cg-RX-API-DMAC7.html)
KR (2) KR102424567B1 (cg-RX-API-DMAC7.html)
CN (1) CN106663598B (cg-RX-API-DMAC7.html)
WO (1) WO2016191371A1 (cg-RX-API-DMAC7.html)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10256093B2 (en) * 2015-11-30 2019-04-09 Alliance For Sustainable Energy, Llc Selective area growth of semiconductors using patterned sol-gel materials
US10366884B1 (en) * 2018-11-08 2019-07-30 Stratio Methods for forming a germanium island using selective epitaxial growth and a sacrificial filling layer
KR102763596B1 (ko) 2019-03-25 2025-02-10 삼성전자주식회사 반도체 소자
FR3128819B1 (fr) * 2021-11-02 2023-09-22 Commissariat Energie Atomique Procédé de traitement de surface

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4910164A (en) * 1988-07-27 1990-03-20 Texas Instruments Incorporated Method of making planarized heterostructures using selective epitaxial growth
JPH04188719A (ja) * 1990-11-21 1992-07-07 Mitsubishi Electric Corp 選択埋込み成長法
JPH0521357A (ja) * 1991-07-10 1993-01-29 Fujitsu Ltd 半導体装置の製造方法
JPH08203833A (ja) * 1995-01-20 1996-08-09 Hitachi Ltd 半導体装置の製造方法
US5981400A (en) * 1997-09-18 1999-11-09 Cornell Research Foundation, Inc. Compliant universal substrate for epitaxial growth
US8278176B2 (en) * 2006-06-07 2012-10-02 Asm America, Inc. Selective epitaxial formation of semiconductor films
WO2010061615A1 (ja) * 2008-11-28 2010-06-03 住友化学株式会社 半導体基板の製造方法、半導体基板、電子デバイスの製造方法、および反応装置
SG169921A1 (en) * 2009-09-18 2011-04-29 Taiwan Semiconductor Mfg Improved fabrication and structures of crystalline material
JP2011108692A (ja) * 2009-11-12 2011-06-02 Ulvac Japan Ltd Ｃｍｏｓデバイス用シリコンウェハの製造方法
CN103367553B (zh) * 2012-03-28 2016-01-20 清华大学 外延衬底的制备方法
JP5931780B2 (ja) * 2013-03-06 2016-06-08 東京エレクトロン株式会社 選択エピタキシャル成長法および成膜装置
JP2014181170A (ja) * 2013-03-21 2014-09-29 Mitsubishi Chemicals Corp 半導体バルク結晶および半導体バルク結晶の製造方法

Also Published As

Publication number Publication date
EP3608944A1 (en) 2020-02-12
CN106663598B (zh) 2018-08-07
JP2018515904A (ja) 2018-06-14
WO2016191371A1 (en) 2016-12-01
EP3111466A1 (en) 2017-01-04
EP3111466A4 (en) 2017-03-29
US9378950B1 (en) 2016-06-28
JP6787786B2 (ja) 2020-11-18
KR20180029091A (ko) 2018-03-19
CN106663598A (zh) 2017-05-10
KR20170029638A (ko) 2017-03-15

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