CN106653896B - 一种用于可见光通信的InGaN量子点光电探测器及其制备方法 - Google Patents
一种用于可见光通信的InGaN量子点光电探测器及其制备方法 Download PDFInfo
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Abstract
一种用于可见光通信的InGaN量子点光电探测器及其制备方法，包括由下往上依次设置的衬底、n型GaN层、InGaN/GaN量子点结构层和p型GaN层，在p型GaN层的表面上设置有p型GaN欧姆接触结构，在n型GaN层露出的表面上设置有n型GaN欧姆接触结构，所述InGaN/GaN量子点结构层为(InGaN)n/(GaN)(n+1)的周期性结构，周期数n为1‑20，每层InGaN量子点的厚度为1‑5nm。本发明通过较薄的InGaN量子点即可以实现较高吸收系数，从而提高器件的量子效率和响应度，避免了传统InGaN基光电探测器中因为吸收系数低，需要外延厚膜InGaN层的工艺缺点，从而解决了InGaN材料生长中的一系列难题。
Description
技术领域
本发明涉及半导体光电子器件技术领域，具体是涉及一种用于可见光通信的InGaN量子点光电探测器及其制备方法。
背景技术
近年来，随着白光发光二极管被应用于通信系统的信号发射端，可见光通信技术（Visible-Light Communication，VLC）成为半导体照明向超越照明发展的重要趋势之一，同时VLC作为物联网领域的一种新技术、作为短距离通信方式的一种补充，引起了越来越多的关注。VLC技术是以可见光波（波长为380~780nm）作为传输媒介的一种短距离光无线通信方式，与通常采用的WiFi、ZigBee、RFID 等无线电波通信方式相比，具有对传输速率快、保密性好、无电磁污染、频谱无需授权等诸多优点。
然而，现行的VLC技术中，仍存在一些突出的问题，需要进一步的研究。目前可见光通信常用的光电探测器主要有三种：普通光电二极管（PD）（常用材料为Si和GaP）、雪崩光电二极管（APD）、图像传感器（阵列集成式PD），这些光电探测器虽然具有材料体系成熟、工艺技术稳定的优点、能够满足现有调制带宽与传输速率要求。但是这些探测器也存在光电转换效率不高、容易受到环境光背景干扰、灵敏度低、体积大、不利于集成等不足，严重限制了可见光通信技术的进一步发展。
相对于传统的Si、GaP材料，InGaN半导体因其较高的饱和电子迁移速率、波长可调范围广等的优点成为新型光电探测器的理想材料。同时，目前在VLC系统中用作发射端光源的白光LED主要有两种形式：1）InGaN/GaN多重量子阱蓝光LED激发黄光荧光粉发出白光；2）InGaN蓝光LED与红、绿LED组合发出白光，因此以InGaN为感光材料能够使探测器的吸收光谱与光源的发射光谱保持一致，由此可见，InGaN基可见光探测器在高速高效可见光通信中具有极大潜力。
InGaN基光电探测器主要有肖特基型、MSM型、p-i-n多量子阱型等结构类型，为保证量子效率和响应度，均需要生长比较厚的InGaN材料以增加对光子的吸收率。然而，由于InGaN的面内晶格常数比GaN大，在GaN上生长InGaN时，存在着因晶格失配引起的压应力，且随着InGaN厚度的增加，压应力会逐渐增大，形成三维岛状结构或者生成大量位错，使得晶体质量严重恶化。因此，生长高质量的厚膜InGaN材料仍面临着技术挑战，限制了InGaN基光电探测器在VLC系统中的实际应用。
发明内容
本发明的目的在于针对上述存在问题和不足，提供一种结构简单可靠、制造容易、吸收率高、材料厚度小的用于可见光通信的InGaN量子点光电探测器及其制备方法。
本发明的技术方案是这样实现的：
本发明所述的用于可见光通信的InGaN量子点光电探测器，包括具有p-i-n结构的InGaN量子点光电探测器本体，其特点是：所述InGaN量子点光电探测器本体包括由下往上依次设置的衬底、n型GaN层、InGaN/GaN量子点结构层和p型GaN层，其中所述p型GaN层的表面上设置有p型GaN欧姆接触结构，所述InGaN量子点光电探测器本体的一侧设置有缺口，通过所述缺口使n型GaN层露出表面，且在该表面上设置有n型GaN欧姆接触结构，所述InGaN/GaN量子点结构层为(InGaN)n/(GaN)(n+1)的周期性结构，周期数n为1-20，每层InGaN量子点的厚度为1-5nm。
其中，所述衬底为蓝宝石衬底、SiC衬底、GaN衬底、AlN衬底、MoW衬底或其它可以生长GaN材料的衬底。
所述n型GaN层、InGaN/GaN量子点结构层和p型GaN层采用金属有机物化学气相衬底外延法（MOCVD）、分子束外延法(MBE)或氢化物气相外延法(HVPE)进行设置。
本发明所述的用于可见光通信的InGaN量子点光电探测器的制备方法，其特点是包括以下步骤：
步骤一：在一衬底上依次外延生长n型GaN层、InGaN/GaN量子点结构层和p型GaN层，其中InGaN/GaN量子点结构层为(InGaN)n/(GaN)(n+1)的周期性结构，周期数n为1-20，每层InGaN量子点的厚度为1-5nm；
步骤二：通过光刻和干法刻蚀的方法去除部分的p型GaN层、InGaN/GaN量子点结构层和n型GaN层，使n型GaN层露出表面；
步骤三：在p型GaN的表面上制备p型GaN欧姆接触结构，并在n型GaN层露出的表面上制备n型GaN欧姆接触结构，即完成InGaN/GaN量子点光电探测器的制备。
其中，所述衬底为蓝宝石衬底、SiC衬底、GaN衬底、AlN衬底、MoW衬底或其它可以生长GaN材料的衬底。
上述步骤一中外延生长的方法为金属有机物化学气相衬底外延法（MOCVD）、分子束外延法(MBE)或氢化物气相外延法(HVPE)。
本发明所述的p-i-n结构InGaN基量子点光电探测器工作原理如下：当光子能量大于InGaN禁带宽度时，将激发InGaN产生电子-空穴对，电子和空穴作为光生载流子，一部分在量子点中弛豫到基态并进行辐射复合或非辐射复合；另一部分则逸出量子点并在电场的作用下作漂移运动，其中电子移向n区，空穴移向p区，形成光生电流。本发明所述的量子点光电探测器结构中，光激发产生的电子回到基态需要几百ps，而电子逃逸出量子点的时间只需要fs量级，因而电子更容易逸出量子点；本发明所述的量子点光电探测器具有p-i-n结构，通过调整p区和n区的掺杂浓度，其电场分布能够平衡电子的传输速率去匹配空穴的传输速率，有利于空穴的输运，减少由于空穴累积而产生的电流阻塞效应，使光生载流子可以持续从量子点传输出来，对光子吸收具有正反馈作用，从而提高了InGaN量子点光电探测器的吸收系数。
本发明与现有技术相比，具有以下优点：
本发明提出的一种具有p-i-n结构的InGaN量子点光电探测器，因为其具有高的光电吸收系数，从而提高了系统的量子效率，增加了器件的响应度，实现了InGaN基可见光探测器在VLC中的应用，而且只需很薄的InGaN的量子点就可以实现可见光通信中光电探测器的需求，这就避免了传统InGaN基光电探测器中因为吸收系数低，需要较厚的InGaN层作为光吸收层的缺点，从而解决了InGaN材料生长中的一系列难题。
下面结合附图对本发明作进一步的说明。
附图说明
图1为本发明实施例一制备InGaN量子点光电探测器的工艺流程图。
图2为本发明实施例一制备的InGaN量子点光电探测器的结构示意图。
具体实施方式
实施例一：
如图1-2所示，本发明实施例提供了一种InGaN量子点光电探测器的制造方法和通过该方法制备的芯片的结构，其制备方法包括以下步骤：
步骤一：在衬底1（该衬底1为蓝宝石衬底）上采用MOCVD依次外延生长n型GaN层2、InGaN/GaN量子点结构层3和p型GaN层4，具体的量子点结构为一层GaN/InGaN/GaN量子点结构，该InGaN量子点结构的厚度为5nm；
步骤二：通过光刻和干法刻蚀的方法去除部分的p型GaN层、InGaN/GaN量子点结构层和n型GaN层，使n型GaN层2露出表面21；
步骤三：在p型GaN层4的表面41上制备p型GaN欧姆接触结构6，并在n型GaN层2露出的表面21上制备n型GaN欧姆接触结构7，即完成InGaN/GaN量子点光电探测器的制备。
通过上述步骤制备的InGaN量子点光电探测器如图2所示，包括蓝宝石衬底1、n型GaN层2、InGaN/GaN量子点结构层3、p型GaN层4、p型GaN欧姆接触结构6和n型GaN欧姆接触结构7。由于在上述步骤二中，通过光刻和干法刻蚀的方法去除了部分的p型GaN层、InGaN/GaN量子点结构层和n型GaN层，因此在InGaN量子点光电探测器的一侧形成有缺口5，而该缺口5的底面即为n型GaN层2露出的表面21。
实施例二：
该实施例与实施例一的不同之处在于：
步骤一：在SiC衬底上采用MBE依次外延生长n型GaN层、InGaN/GaN量子点结构层和p型GaN层，具体的量子点结构为一层(InGaN)5/(GaN)6量子点结构，该InGaN量子点结构的厚度为4nm。
实施例三：
该实施例与实施例一的不同之处在于：
步骤一：在GaN衬底上采用HVPE依次外延生长n型GaN层、InGaN/GaN量子点结构层和p型GaN层，具体的量子点结构为一层(InGaN)10/(GaN)11量子点结构，该InGaN量子点结构的厚度为3nm。
实施例四：
该实施例与实施例一的不同之处在于：
步骤一：在AlN衬底上采用MBE依次外延生长n型GaN层、InGaN/GaN量子点结构层和p型GaN层，具体的量子点结构为一层(InGaN)15/(GaN)16量子点结构，该InGaN量子点结构的厚度为2nm。
实施例五：
该实施例与实施例一的不同之处在于：
步骤一：在MoW衬底上采用MOCVD依次外延生长n型GaN层、InGaN/GaN量子点结构层和p型GaN层，具体的量子点结构为一层(InGaN)20/(GaN)21量子点结构，该InGaN量子点结构的厚度为1nm。
本发明是通过实施例来描述的，但并不对本发明构成限制，参照本发明的描述，所公开的实施例的其他变化，如对于本领域的专业人士是容易想到的，这样的变化应该属于本发明权利要求限定的范围之内。
Claims (6)
1.一种用于可见光通信的InGaN量子点光电探测器，包括具有p-i-n结构的InGaN量子点光电探测器本体，其特征在于：所述InGaN量子点光电探测器本体包括由下往上依次设置的衬底（1）、n型GaN层（2）、InGaN/GaN量子点结构层（3）和p型GaN层（4），其中所述p型GaN层（4）的表面（41）上设置有p型GaN欧姆接触结构（6），所述InGaN量子点光电探测器本体的一侧设置有缺口（5），通过所述缺口（5）使n型GaN层（2）露出表面（21），且在该表面（21）上设置有n型GaN欧姆接触结构（7），所述InGaN/GaN量子点结构层（3）为(InGaN)n/(GaN)(n+1)的周期性结构，周期数n为1-20，每层InGaN量子点的厚度为1-5nm。
2.根据权利要求1所述的用于可见光通信的InGaN量子点光电探测器，其特征在于：所述衬底（1）为蓝宝石衬底、SiC衬底、GaN衬底、AlN衬底或MoW衬底。
3.根据权利要求1所述的用于可见光通信的InGaN量子点光电探测器，其特征在于：所述n型GaN层（2）、InGaN/GaN量子点结构层（3）和p型GaN层（4）采用金属有机物化学气相衬底外延法（MOCVD）、分子束外延法(MBE)或氢化物气相外延法(HVPE)进行设置。
4.一种用于可见光通信的InGaN量子点光电探测器的制备方法，该方法用于制备如上述权利要求1所述的InGaN量子点光电探测器，其特征在于包括以下步骤：
步骤一：在一衬底（1）上依次外延生长n型GaN层（2）、InGaN/GaN量子点结构层（3）和p型GaN层（4），其中InGaN/GaN量子点结构层（3）为(InGaN)n/(GaN)(n+1)的周期性结构，周期数n为1-20，每层InGaN量子点的厚度为1-5nm；
步骤二：通过光刻和干法刻蚀的方法去除部分的p型GaN层、InGaN/GaN量子点结构层和n型GaN层，使n型GaN层（2）露出表面（21）；
步骤三：在p型GaN（4）的表面（41）上制备p型GaN欧姆接触结构（6），并在n型GaN层（2）露出的表面（21）上制备n型GaN欧姆接触结构（7），即完成InGaN/GaN量子点光电探测器的制备。
5.根据权利要求4所述的用于可见光通信的InGaN量子点光电探测器的制备方法，其特征在于：所述衬底（1）为蓝宝石衬底、SiC衬底、GaN衬底、AlN衬底或MoW衬底。
6.根据权利要求4所述的用于可见光通信的InGaN量子点光电探测器的制备方法，其特征在于：上述步骤一中外延生长的方法为金属有机物化学气相衬底外延法（MOCVD）、分子束外延法(MBE)或氢化物气相外延法(HVPE)。
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