CN106601726A - 一种彩色透明led发光板 - Google Patents
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- 238000001755 magnetron sputter deposition Methods 0.000 claims description 6
- 206010030113 Oedema Diseases 0.000 claims description 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N SnO2 Inorganic materials O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 3
- 238000000137 annealing Methods 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 3
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- 208000037265 diseases, disorders, signs and symptoms Diseases 0.000 claims description 3
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- 238000007711 solidification Methods 0.000 claims description 3
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- FKNQFGJONOIPTF-UHFFFAOYSA-N Sodium cation Chemical compound [Na+] FKNQFGJONOIPTF-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
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- 229910001415 sodium ion Inorganic materials 0.000 description 1
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- H—ELECTRICITY
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- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
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Abstract
本发明公开了一种彩色透明LED发光板，包括由下至上依次连接的透明基板、ITO导电线路层、LED晶片组以及PU透明膜层，LED晶片组选自红、绿、蓝倒装LED晶片中至少一种，每三个LED晶片依次排列形成LED晶片组，LED晶片组焊接于ITO导电线路层上，LED芯片组表面覆盖常温固化的PU透明膜层。由于在透明基板上设置三种基础颜色的倒装LED晶片依次排列，从而实现了多种色彩发光的效果，通过简单地焊接完成封装，制备方法简单，发光效果稳定。
Description
技术领域
本发明涉及LED的制造领域，特别涉及一种彩色透明LED发光板。
背景技术
目前，用于LED发光的电路基板主要以玻纤板为主；LED发光源即由单颗LED组合而成；LED发光源制造方法主要是通过点胶、固晶、打线、灌封等LED封装工艺，将LED晶片封装到特制的支架中；LED发光板就是将封装好的单颗LED通过焊接工艺固定到玻纤电路板上，通过外设电路实现板体发光。LED倒装封装技术由于工艺和技术水平的不成熟，目前也仅限于专为照明的白光技术。
发明内容
本发明要解决的技术问题是提供一种彩色透明LED发光板，该发光板可实现多种发光色彩，同时其制备过程简单，发光效果稳定。
为了解决上述技术问题，本发明的技术方案为一种彩色透明LED发光板，包括由下至上依次连接的透明基板、ITO导电线路层、LED晶片组以及PU透明膜层，LED晶片组选自红、绿、蓝倒装LED晶片中至少一种，每三个LED晶片依次排列形成LED晶片组，LED晶片组焊接于ITO导电线路层上，LED芯片组表面覆盖常温固化的PU透明膜层。
优选地，ITO导电线路层的厚度为100～200nm，ITO导电线路层的制备方法为：透明基板经去离子水洗、超声波清洗后，进入ITO镀膜室磁控溅射ITO导电薄膜层，再经加热固化退火形成ITO导电膜层，ITO导电膜层最后经过蚀刻形成ITO导电线路层。
优选地，磁控溅射条件为：ITO镀膜室中磁控溅射靶材In2O3和SnO2的重量比为90％：10％，纯度为99.99％，靶基距为6cm，透明基板的温度为室温，真空室中的真空为4.0×10-5Pa，Ar气分压1.0Pa，Ar气流量为12cm3/min，溅射功率为50～200W，沉积速率约为0.7～1nm/s。
优选地，透明基板与ITO导电线路层之间还设置有SiO2层。
优选地，透明基板上与ITO导电线路层相对的平面上设置银反光层。
优选地，透明基板上与LED晶片组相对的位置呈内凹状。
采用上述技术方案，由于在透明基板上设置三种基础颜色的倒装LED晶片依次排列，从而实现了多种色彩发光的效果，通过简单地焊接完成封装，制备方法简单，发光效果稳定。
附图说明
图1为实施例中一种彩色透明LED发光板的结构示意图。
图中，1-透明基板、11-凸起、2-ITO导电线路层、3-LED晶片组、4-PU透明膜层。
具体实施方式
下面结合附图对本发明的具体实施方式作进一步说明。在此需要说明的是，对于这些实施方式的说明用于帮助理解本发明，但并不构成对本发明的限定。此外，下面所描述的本发明各个实施方式中所涉及的技术特征只要彼此之间未构成冲突就可以相互组合。
一种彩色透明LED发光板，包括由下至上依次连接的透明基板1、ITO导电线路层2、LED晶片组3以及PU透明膜层4，LED晶片组选自红、绿、蓝倒装LED晶片中至少一种，每三个LED晶片依次排列形成LED晶片组，本实施例以红、绿、蓝依次排列形成一个LED晶片组为代表例，其他的排列或红、绿、蓝三色LED晶片的选择可根据日常应用所需的颜色进行选定，LED晶片组焊接于ITO导电线路层上，LED芯片组表面覆盖常温固化的PU透明膜层。常温固化有利于简化生产工艺。
而为了提高发光的稳定性，降低电阻率，ITO导电线路层的厚度设置为100～200nm，同时ITO导电线路层的制备方法为：透明基板经去离子水洗、超声波清洗后，进入ITO镀膜室磁控溅射ITO导电薄膜层，再经加热固化退火形成ITO导电膜层，ITO导电膜层最后经过蚀刻形成ITO导电线路层。在ITO镀膜室进行磁控溅射时，磁控溅射靶材In2O3和SnO2的重量比为90％：10％，纯度为99.99％，靶基距为6cm，透明基板的温度为室温，真空室中的真空为4.0×10-5Pa，Ar气分压1.0Pa，Ar气流量为12cm3/min，溅射功率为50～200W，沉积速率约为0.7～1nm/s。
而为了防止透明基板中的钠离子的渗透，从而对整个电路产生影响，可在透明基板与ITO导电线路层之间还设置有SiO2层。而为了增强其发光效果，可在透明基板上与ITO导电线路层相对的平面上设置银反光层，以此来增强其单面的反射效果，而将透明基板上与LED晶片组相对的位置呈内凹状，即设置有对着LED晶片的向内的凸起11，同时内凹状也喷涂上银反光层，内凹状可以呈三角形、半圆形等，该内凹状的部分可进一步增强其反射效果。
以上结合附图对本发明的实施方式作了详细说明，但本发明不限于所描述的实施方式。对于本领域的技术人员而言，在不脱离本发明原理和精神的情况下，对这些实施方式进行多种变化、修改、替换和变型，仍落入本发明的保护范围内。
Claims (6)
1.一种彩色透明LED发光板，其特征在于，包括由下至上依次连接的透明基板、ITO导电线路层、LED晶片组以及PU透明膜层，所述LED晶片组选自红、绿、蓝倒装的LED晶片中至少一种，每三个所述LED晶片依次排列形成LED晶片组，所述LED晶片组焊接于ITO导电线路层上，LED芯片组表面覆盖常温固化的PU透明膜层。
2.根据权利要求1所述的彩色透明LED发光板，其特征在于，所述ITO导电线路层的厚度为100～200nm，ITO导电线路层的制备方法为：所述透明基板经去离子水洗、超声波清洗后，进入ITO镀膜室磁控溅射ITO导电薄膜层，再经加热固化退火形成ITO导电膜层，ITO导电膜层最后经过蚀刻形成ITO导电线路层。
3.根据权利要求1所述的彩色透明LED发光板，其特征在于，所述磁控溅射条件为：ITO镀膜室中磁控溅射靶材In2O3和SnO2的重量比为90％：10％，纯度为99.99％，靶基距为6cm，透明基板的温度为室温，真空室中的真空为4.0×10-5Pa，Ar气分压1.0Pa，Ar气流量为12cm3/min，溅射功率为50～200W，沉积速率约为0.7～1nm/s。
4.根据权利要求1～3中任一项所述的彩色透明LED发光板，其特征在于，所述透明基板与ITO导电线路层之间还设置有SiO2层。
5.根据权利要求4所述的彩色透明LED发光板，其特征在于，所述透明基板上与ITO导电线路层相对的平面上设置银反光层。
6.根据权利要求5所述的彩色透明LED发光板，其特征在于，所述透明基板上与LED晶片组相对的位置呈内凹状。
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111509102A (zh) * | 2019-01-31 | 2020-08-07 | 致伸科技股份有限公司 | 半导体发光单元及其封装方法 |
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| CN201713564U (zh) * | 2010-02-02 | 2011-01-19 | 深圳市海森应用材料有限公司 | Izao透明导电膜 |
| TW201119099A (en) * | 2009-11-25 | 2011-06-01 | Everlight Electronics Co Ltd | Light-emitting diode and method for manufacturing thereof |
| CN103296184A (zh) * | 2013-05-31 | 2013-09-11 | 左洪波 | 一种以蓝宝石做芯片支架的led灯条的制作方法 |
| CN206370425U (zh) * | 2017-01-10 | 2017-08-01 | 广州市祺虹电子科技有限公司 | 一种彩色透明led发光板 |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1378292A (zh) * | 2001-04-04 | 2002-11-06 | 光磊科技股份有限公司 | 高效率封装光电元件及其封装方法 |
| TW201119099A (en) * | 2009-11-25 | 2011-06-01 | Everlight Electronics Co Ltd | Light-emitting diode and method for manufacturing thereof |
| CN201713564U (zh) * | 2010-02-02 | 2011-01-19 | 深圳市海森应用材料有限公司 | Izao透明导电膜 |
| CN103296184A (zh) * | 2013-05-31 | 2013-09-11 | 左洪波 | 一种以蓝宝石做芯片支架的led灯条的制作方法 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111509102A (zh) * | 2019-01-31 | 2020-08-07 | 致伸科技股份有限公司 | 半导体发光单元及其封装方法 |
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