CN106587968A - 一种低介电常数低密度的微波介质陶瓷材料及其制备方法 - Google Patents
一种低介电常数低密度的微波介质陶瓷材料及其制备方法 Download PDFInfo
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Abstract
本发明公开了一种低介电常数、低密度的微波介质陶瓷材料及其制备方法。该微波介质陶瓷材料的化学组成式为:CaMgSiO4。(1)以CaCO3、MgO和SiO2高纯粉体为原料,按CaMgSiO4的化学计量比进行称料;(2)将步骤(1)原料湿式球磨混合4h,干燥后在1225℃下预烧4h;(3)将预烧后的粉体进行湿式球磨后添加5wt%聚乙烯醇进行造粒并压制成型,最后将坯体排胶后烧结,从而获得较低的介电常数(εr),较低的密度,较高的Q×f值以及谐振频率温度系数(τf)稳定的微波介质材料。
Description
技术领域
本发明属于电子陶瓷及其制造领域,涉及在微波频段使用的谐振器、滤波器、介质天线、介质导波回路等微波元器件的介质陶瓷材料的制备方法。
背景技术
微波介质陶瓷是指应用于微波频段(主要是300MHz~30GHz频段)电路中作为介质材料并完成一种或多种功能的陶瓷,是现代通信广泛使用的谐振器、滤波器、介质天线、介质导波回路等微波元器件的关键材料。近年来,随着移动通信、卫星通信、全球卫星定位系统(GPS)、蓝牙技术以及无线局域网(WLA)等现代通信技术的飞速发展,微波技术也向着低成本化、高频化以及轻量化方向的发展,这要求微波介质材料除了具有优良的微波介电性能(高的Q×f值,较低的介电常数、近零的τf值),还必须具有低的生产成本和低的密度。
为了满足上述要求,本发明专利提供了一种微波介电性能优异,制备工艺简单、密度低、成本低的新型微波介质陶瓷材料。该材料具有较低的密度(ρ=2.866~2.973g/cm3),较低的介电常数(εr=6.3~7.2),较高的Q×f值(23,626~62,494GHz)以及稳定的谐振频率温度系数(τf为-62.9ppm/℃),烧结温度处于1300~1425℃,具有很大的商业应用前景。
发明内容
本发明通过合成CaMgSiO4,从而获得一种低介电常数低密度以及性能优异的微波介质陶瓷材料。
本发明涉及的微波介质陶瓷材料的化学组成式为:CaMgSiO4。
微波介质陶瓷材料的制备方法具体步骤为:
(1)以纯度≥99%的高纯粉CaCO3、MgO和SiO2为原料按CaMgSiO4的化学计量比进行称料;之后,按照粉体、氧化锆球与无水乙醇质量比为1:2:1的比例向粉体中依次加入氧化锆球和无水乙醇,球磨4小时,磨细后在100~120℃下快速烘干,并对烘干后的粉体进行过筛处理,过筛后的粉体压制成圆柱体;将圆柱体放在氧化铝坩埚内进行预烧,预烧温度为1225℃,保温时间为4h,升温速率为5℃/min;
(2)将步骤(1)中预烧后得到的圆柱体在研磨中进行初步粉碎得粉体;之后,按照粉体、氧化锆球与无水乙醇质量比为1:2:1的比例依次放入到尼龙罐中球磨4小时后取出,放入烘炉内在100~120℃下烘干;烘干后的粉体加入5wt%聚乙烯醇进行造粒,之后将粉体压制成直径为12mm厚度为6mm的小圆柱,将小圆柱置于马弗炉中以1℃/min的升温速率加热至550℃并在此温度排胶4小时,将排完胶的小圆柱在1300~1425℃下烧结4小时即得到微波介质陶瓷材料。
本发明制备的微波介质陶瓷,其密度较小,微波介电性能优异:较低的介电常数(εr)、较高的Q×f值以及稳定的谐振频率温度系数(τf);其中,CaMgSiO4在烧结温度1350℃下具有优良的微波性能(ρ~2.973g/cm3,证明了该材料陶瓷具有低密度,εr~7.1,Q×f~62494GHz,τf~-62.9ppm/℃),并且在烧结温度为1325~1425℃的范围内都保持有良好的微波性能,具有很大的商业应用前景。
具体实施方式
实施例:
表1列出了构成本发明的6个具体实施例及其微波介电性能。其制备方法如上所述,用圆柱介质谐振器法进行微波介电性能的评价。
本陶瓷可广泛用于各种介质基板、天线和滤波器等微波电子元器件的制造,满足现代移动通信系统的技术需要。
表1:
Claims (1)
1.一种低介电常数低密度的微波介质陶瓷材料,其特征在于该微波介质陶瓷材料的化学组成式为:CaMgSiO4;
所述微波介质陶瓷材料的制备方法具体步骤为:
(1)以纯度≥99%的高纯粉CaCO3、MgO和SiO2为原料按CaMgSiO4的化学计量比进行称料;之后,按照粉体、氧化锆球与无水乙醇质量比为1:2:1的比例向粉体中依次加入氧化锆球和无水乙醇,球磨4小时,磨细后在100~120℃下快速烘干,并对烘干后的粉体进行过筛处理,过筛后的粉体压制成圆柱体;将圆柱体放在氧化铝坩埚内进行预烧,预烧温度为1225℃,保温时间为4h,升温速率为5℃/min;
(2)将步骤(1)中预烧后得到的圆柱体在研磨中进行初步粉碎得粉体;之后,按照粉体、氧化锆球与无水乙醇质量比为1:2:1的比例依次放入到尼龙罐中球磨4小时后取出,放入烘炉内在100~120℃下烘干;烘干后的粉体加入5wt%聚乙烯醇进行造粒,之后将粉体压制成直径为12mm厚度为6mm的小圆柱,将小圆柱置于马弗炉中以1℃/min的升温速率加热至550℃并在此温度排胶4小时,将排完胶的小圆柱在1300~1425℃下烧结4小时即得到微波介质陶瓷材料。
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CN109320225A (zh) * | 2018-09-30 | 2019-02-12 | 天津大学 | 一种超低介电损耗钙镁硅系微波介质陶瓷的制备方法 |
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Cited By (2)
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CN107285756A (zh) * | 2017-08-17 | 2017-10-24 | 无锡鑫圣慧龙纳米陶瓷技术有限公司 | 一种小介电常数的微波介质陶瓷材料及其制备方法 |
CN109320225A (zh) * | 2018-09-30 | 2019-02-12 | 天津大学 | 一种超低介电损耗钙镁硅系微波介质陶瓷的制备方法 |
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