CN106571415A - Novel LED epitaxial wafer and preparation method thereof - Google Patents

Novel LED epitaxial wafer and preparation method thereof Download PDF

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Publication number
CN106571415A
CN106571415A CN201610928886.5A CN201610928886A CN106571415A CN 106571415 A CN106571415 A CN 106571415A CN 201610928886 A CN201610928886 A CN 201610928886A CN 106571415 A CN106571415 A CN 106571415A
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layer
gan
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epitaxial wafer
type gan
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CN106571415B (en
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孙玉芹
董彬忠
王江波
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HC Semitek Zhejiang Co Ltd
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HC Semitek Zhejiang Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen

Abstract

The invention discloses a novel LED epitaxial wafer and a preparation method thereof and belongs to the light emitting diode field. The novel LED epitaxial wafer comprises a substrate as well as a u-type GaN layer, an N-type GaN layer, a multi-quantum well active layer and a P-type GaN carrier layer which all sequentially cover the substrate, wherein the multi-quantum well active layer includes a plurality of InGaN well layers and a plurality of GaN barrier layers which are grown alternately; and the novel LED epitaxial wafer further comprises a GaN highlighting layer covering the P-type GaN carrier layer; a plurality of protrusions are informally distributed on one surface of the GaN highlighting layer at intervals, wherein the one surface of the GaN highlighting layer is far away from the P-type GaN carrier layer; and the height of the protrusions ranges from 0.2 to 1.5 microns. According to the novel LED epitaxial wafer and the preparation method thereof of the invention, the GaN highlighting layer is adopted, and therefore, the luminous efficiency of the LED epitaxial wafer can be improved.

Description

New LED epitaxial wafer and preparation method thereof
Technical field
The present invention relates to LED (English：Light Emitting Diode, Chinese：Light emitting diode) field, more particularly to A kind of New LED epitaxial wafer and preparation method thereof.
Background technology
LED as it is a kind of efficiently, the New Solid lighting source of environmental protection, with small volume, lightweight, life-span length, Reliability it is high and using it is low in energy consumption the advantages of, thus be widely used in lighting field, at the same LED in mobile phone, show Application in terms of the backlights such as screen is also more and more popular.
LED is the raw material of the wafer manufacture inside LED.Existing LED generally include substrate and Layer of undoped gan on substrate, N-type GaN layer, multiple quantum well layer and p-type GaN layer are grown in successively.Wherein, if active layer includes The InGaN layer and GaN layer of dry alternating growth.
During the present invention is realized, inventor has found that prior art at least has problems with：
For LED, N-type GaN layer provides the electronics in carrier, and p-type GaN layer provides the sky in carrier Cave, and both carrier transports into multiple quantum well layer when there is radiation recombination in the SQW (InGaN layer) and light.Amount The light sent in sub- trap is projected after p-type GaN layer from all directions, because the direction that part light (lateral light) is projected is outwardly Prolong the diffusion of piece both sides, for the product section lateral light for only using axial light can be wasted, cause the outer quantum of epitaxial wafer It is less efficient.
The content of the invention
In order to the luminous efficiency for solving the problems, such as prior art epitaxial wafer is low, embodiments provide a kind of new LED and preparation method thereof.The technical scheme is as follows：
In a first aspect, embodiments providing a kind of New LED epitaxial wafer, the New LED epitaxial wafer includes：Lining Bottom, and it is sequentially coated on the u-shaped GaN layer on the substrate, N-type GaN layer, multiple quantum well active layer and p-type GaN carrier Layer, the multiple quantum well active layer includes multiple InGaN well layer and multiple GaN barrier layer of alternating growth；
The New LED epitaxial wafer also includes：The GaN being covered in the p-type GaN carrier layer highlights layer, the GaN Highlight layer and multiple projections are distributed with away from uniform intervals in the one side of p-type GaN carrier layer, the raised height is 0.2- 1.5um。
In a kind of implementation of the embodiment of the present invention, it is T that the GaN highlights the growth temperature of layer：900℃≤T≤ 1000℃。
In another kind of implementation of the embodiment of the present invention, it is P that the GaN highlights the growth pressure of layer：150torr≤ P≤680torr。
In another kind of implementation of the embodiment of the present invention, the GaN is highlighted when layer grows and is passed through TMGa as Ga sources, The flow of the TMGa is m：50sccm≤m≤200sccm.
In another kind of implementation of the embodiment of the present invention, the GaN is highlighted when layer grows and is passed through (C5H5)2Mg conducts Mg the sources, (C5H5)2The flow of Mg is m1：50sccm≤m1≤200sccm.
Second aspect, the embodiment of the present invention additionally provides a kind of New LED extension piece preparation method, and methods described includes：
One substrate is provided；
Grow u-shaped GaN layer and N-type GaN layer successively over the substrate；
The multiple quantum well active layer is grown in the N-type GaN layer, the multiple quantum well active layer includes alternating growth Multiple InGaN well layer and multiple GaN barrier layer；
The growth P-type GaN carrier layer in the multiple quantum well active layer；
GaN is grown in many p-type GaN carrier layers and highlights layer, the GaN highlights layer away from p-type GaN carrier layer One side on uniform intervals be distributed with multiple projections, the raised height is 0.2-1.5um.
In a kind of implementation of the embodiment of the present invention, the GaN that grows in many p-type GaN carrier layers is carried Bright layers, including：
Growth temperature be 900 DEG C～1000 DEG C, growth pressure be 200mbar～900mbr in the environment of, in many P GaN is grown in type GaN carrier layer and highlights layer.
In another kind of implementation of the embodiment of the present invention, the GaN is highlighted when layer grows and is passed through TMGa as Ga sources, The flow of the TMGa is m：50sccm≤m≤200sccm.
In another kind of implementation of the embodiment of the present invention, the GaN is highlighted when layer grows and is passed through (C5H5)2Mg conducts Mg the sources, (C5H5)2The flow of Mg is m1：50sccm≤m1≤200sccm.
In another kind of implementation of the embodiment of the present invention, the GaN highlights layer in N2Grown under environment.
The beneficial effect that technical scheme provided in an embodiment of the present invention is brought is：
The present invention highlights layer by arranging GaN in p-type GaN carrier layer, and GaN highlights layer away from p-type GaN carrier layer One side on uniform intervals be distributed with multiple projections, raised height is 0.2-1.5um；The light projected in multiple quantum well active layer Through GaN carrier layers, the direction that part light is projected is that this part light is through GaN carrier layers towards the diffusion of epitaxial wafer both sides Afterwards layer is highlighted into GaN, it is because the surface that GaN highlights layer has projection and raised with certain altitude, when this part light irradiation Reflection can be produced to after projection, changes the axial direction in the direction of light towards epitaxial wafer, so as to avoid the waste of this part light, and then Improve luminous efficiency；In addition, the height of projection is 0.2-1.5um, the reflecting effect to light was both can ensure that, to meet light efficiency Raising demand, is unlikely to cause epitaxial wafer integral thickness excessive again.
Description of the drawings
Technical scheme in order to be illustrated more clearly that the embodiment of the present invention, below will be to making needed for embodiment description Accompanying drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the present invention, for For those of ordinary skill in the art, on the premise of not paying creative work, can be obtaining other according to these accompanying drawings Accompanying drawing.
Fig. 1 is the structural representation of New LED epitaxial wafer provided in an embodiment of the present invention；
Fig. 2 is the structural representation that layer is highlighted in New LED epitaxial wafer provided in an embodiment of the present invention；
Fig. 3 is the flow chart of New LED extension piece preparation method provided in an embodiment of the present invention.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with accompanying drawing to embodiment party of the present invention Formula is described in further detail.
Fig. 1 is a kind of structural representation of New LED epitaxial wafer provided in an embodiment of the present invention, and referring to Fig. 1, this is new LED includes：Substrate 100, and it is sequentially coated on the u-shaped GaN layer 101 on substrate 100, N-type GaN layer 102, Multiple-quantum Trap active layer 103 and p-type GaN carrier layer 104, the multiple quantum well active layer 103 includes：Multiple InGaN of alternating growth Well layer and multiple GaN barrier layer.
Wherein, New LED epitaxial wafer also includes：The GaN being covered in p-type GaN carrier layer highlights layer 105.Referring to figure 2, GaN highlight layer 105 is distributed with multiple raised 1051 away from uniform intervals in the one side of p-type GaN carrier layer 104, projection 1051 height is 0.2-1.5um.As shown in Fig. 2 when the light projected in multiple quantum well active layer 103 is through GaN carrier layers 104, because the direction that part light is projected is spread (such as the direction A in Fig. 2) towards epitaxial wafer both sides, this part light can be wasted Fall；And be provided with after GaN highlights layer 105, light highlights layer 105 after GaN carrier layers 104 into GaN, because GaN is carried The surface of bright layers 105 has raised 1051, and the illumination partly spread towards epitaxial wafer both sides can produce reflection after being mapped to raised 1051, Change the axial direction (such as the direction B in Fig. 2) in the direction of light towards epitaxial wafer, so as to avoid the waste of this part light, Jin Erti High luminous efficiency.
In embodiments of the present invention, raised 1051 can be regular and irregular shape, usually block or column, Fig. 2 Shown shape is only for example.The height of each projection 1051 is between 0.2-1.5um.
In embodiments of the present invention, GaN highlights thickness of the thickness of layer 105 more than or equal to raised 1051.When GaN is highlighted When the thickness of layer 105 is more than raised 1051 thickness, GaN highlights layer 105 includes that the bottom being located in GaN carrier layers 104 is thin Projection 1051 on layer and bottom thin layer, the thickness of bottom thin layer is not more than raised 1051 thickness.When GaN highlights layer 105 When thickness is equal to raised 1051 thickness, GaN highlights the projection 1051 that layer 105 only includes being located in GaN carrier layers 104.
Preferably, above-mentioned raised 1051 thickness is 0.5-0.8um.GaN highlights p-type GaN that layer 105 can be doping Mg Layer, this crystalline quality of material is not fine, and projection 1051 is blocked up to cause its electrical characteristics to be deteriorated, while as blocked up suction Light, causes brightness to decline；Raised 1051 is excessively thin then poor to the reflecting effect of light, and it is poor that light efficiency improves effect.
In a kind of implementation of the embodiment of the present invention, it is T that GaN highlights the growth temperature of layer 105：900℃≤T≤ 1000℃.The growth temperature that GaN highlights layer 105 is too low, and crystal mass is bad, affects photoelectric characteristic；GaN highlights the life of layer 105 Long temperature is too high, and the effect (cannot form required projection 1051) for changing pattern can not be reached again, highlights DeGrain.It is excellent Selection of land, growth temperature is 950-980 DEG C.
In a kind of implementation of the embodiment of the present invention, it is P that GaN highlights the growth pressure of layer 105：150torr≤P≤ 680torr.The growth pressure that GaN highlights layer 105 is too high, and Mg can be caused to be difficult to adulterate, and causes epitaxial wafer overtension；GaN is carried The growth pressure of bright layers 105 is too low, and the effect (cannot form required projection 1051) for changing pattern can not be reached again, highlights effect Fruit is not obvious.
Specifically, GaN is highlighted and TMGa is passed through when layer 105 grows as Ga sources, and the flow of TMGa is m：50sccm≤m≤ 200sccm.The flow of TMGa is too high, does not reach the effect (cannot form raised 1051) for changing pattern；The flow of TMGa is too low, Flow meter cannot carry out precise control to flow, while GaN can be caused to highlight layer 105 growing slowly, cause time cost Increase.Preferably, the flow of TMGa is 100-150sccm.
Specifically, GaN is highlighted when layer 105 grows and is passed through (C5H5)2Mg is used as Mg sources, (C5H5)2The flow of Mg is m1： 50sccm≤m1≤200sccm.Adulterate Mg in by highlighting layer 105 in GaN, realizes that raised 1051 form, while can improve Voltage, there is provided hole.(C5H5)2The flow of Mg is too low or too high voltages, can all cause epitaxial wafer overtension.Preferably, (C5H5)2The flow of Mg is 100-120sccm.
Specifically, GaN highlights layer 105 in N2Grown under environment.In N2GaN is grown under environment and highlights layer 105, more had Beneficial to reaching pattern requirement.
Wherein, the number of plies of InGaN well layer and GaN barrier layer is 6.
Further, the thickness of u-shaped GaN layer 101 is 1～4 μm (preferably 2 μm), and the thickness of N-type GaN layer 102 is 1～4 μm (preferably 2 μm), the thickness of InGaN well layer is 2.8～3.8nm (preferably 3～3.5nm), the thickness of GaN barrier layer be 6nm～ 20nm (preferably 8～15nm), the thickness of p-type GaN carrier layer 104 is 100～500nm (preferred 200nm).
In the present embodiment, substrate 100 includes but is not limited to Sapphire Substrate.
The present invention highlights layer by arranging GaN in p-type GaN carrier layer, and GaN highlights layer away from p-type GaN carrier layer One side on uniform intervals be distributed with multiple projections, raised height is 0.2-1.5um；The light projected in multiple quantum well active layer Through GaN carrier layers, the direction that part light is projected is that this part light is through GaN carrier layers towards the diffusion of epitaxial wafer both sides Afterwards layer is highlighted into GaN, it is because the surface that GaN highlights layer has projection and raised with certain altitude, when this part light irradiation Reflection can be produced to after projection, changes the axial direction in the direction of light towards epitaxial wafer, so as to avoid the waste of this part light, and then Improve luminous efficiency.Test result indicate that, by increase GaN highlight layer, can make bare crystalline luminance raising amplitude up to 50% with On, package brightness lifts amplitude up to more than 20%.Further, the epitaxial wafer of this structure, on the one hand can be with improving product Absolute brightness, to lift the market competitiveness of LED product, so as to seize the market share；On the other hand, can also be to part luma Cost cutting is carried out beyond requirement product, such as reduce chip size, extension raw material requirement etc. reduced, so as to reduce LED Product cost.
In addition, above-mentioned raised height is 0.2-1.5um, the reflecting effect to light was both can ensure that, carried with meeting light efficiency High demand, is unlikely to cause epitaxial wafer integral thickness excessive again.
Fig. 3 is a kind of flow chart of New LED extension piece preparation method provided in an embodiment of the present invention, and the method is used to make LED shown in standby Fig. 1 and Fig. 2, referring to Fig. 3, the method includes：
Step 200：One substrate is provided.
In the present embodiment, substrate includes but is not limited to Sapphire Substrate.
Specifically, step 200 can include：Sapphire Substrate in graphite plate will be placed on to send in reaction chamber, and heated To 1000～1100 DEG C, pressure carries out the pretreatment of 5min to reaction chamber to 500torr to Sapphire Substrate in increase reaction chamber.
Step 201：Grow u-shaped GaN layer and N-type GaN layer successively on substrate.
Specifically, step 201 can include：Reacting by heating chamber to 1100～1200 DEG C, reduce reaction chamber in pressure extremely 200torr, grows on a sapphire substrate one layer 1～4 μm (preferably 2 μm) thick u-shaped GaN layer；
Keep reaction cavity temperature to be 1100～1200 DEG C, keep pressure in reaction chamber to be 200torr, in u-shaped GaN layer One layer 1～4 μm of growth (preferably 2 μm) thickness mixes the N-type GaN layer of Si.
Step 202：Multiple quantum well active layer is grown in N-type GaN layer, the multiple quantum well active layer includes alternating growth Multiple InGaN well layer and multiple GaN barrier layer.
Specifically, step 202 can include：Pressure in reaction chamber is kept to be 200torr, while reducing reaction chamber interior temperature Degree, grows one layer of multiple quantum well active layer in N-type GaN layer, and the multiple quantum well active layer includes 6 InGaN well layer and 6 With the GaN barrier layer of InGaN well layer alternating growths, wherein, the thickness of InGaN well layer be 2.8～3.8nm (preferably 3～ 3.5nm), growth temperature is 750～780 DEG C；The thickness of GaN barrier layer be 6nm～20nm (preferably 8～15nm), growth temperature For 900 DEG C.
Step 203：The growth P-type GaN carrier layer in multiple quantum well active layer.
Specifically, step 203 can include：To 940～970 DEG C, pressure is remained in reaction chamber in reacting by heating chamber 200torr, grows the thick p-type GaN current-carrying for mixing Mg of one layer of 100～500nm (preferred 200nm) on multi-quantum well active region layer Sublayer.
Step 204：GaN is grown in p-type GaN carrier layer and highlights layer, GaN highlights layer away from p-type GaN carrier layer Simultaneously go up uniform intervals and multiple projections are distributed with, raised height is 0.2-1.5um (0.5-0.8um).
When realizing, step 204 can include：
It is 900 DEG C～1000 DEG C (preferred 950-980 DEG C), growth pressure for 200mbar～900mbr in growth temperature Under environment, grow GaN in many p-type GaN carrier layers and highlight layer.
Specifically, GaN is highlighted and TMGa is passed through when layer grows as Ga sources, and the flow of TMGa is m：50sccm≤m≤ 200sccm (preferred 100-150sccm).
Specifically, GaN is highlighted when layer grows and is passed through (C5H5)2Mg is used as Mg sources, (C5H5)2The flow of Mg is m1：50sccm ≤ m1≤200sccm (preferred 100-120sccm).
Specifically, GaN highlights layer in N2Grown under environment.
The present invention highlights layer by arranging GaN in p-type GaN carrier layer, and GaN highlights layer away from p-type GaN carrier layer One side on uniform intervals be distributed with multiple projections, raised height is 0.2-1.5um；The light projected in multiple quantum well active layer Through GaN carrier layers, the direction that part light is projected is that this part light is through GaN carrier layers towards the diffusion of epitaxial wafer both sides Afterwards layer is highlighted into GaN, it is because the surface that GaN highlights layer has projection and raised with certain altitude, when this part light irradiation Reflection can be produced to after projection, changes the axial direction in the direction of light towards epitaxial wafer, so as to avoid the waste of this part light, and then Improve luminous efficiency.In addition, the height of projection is 0.2-1.5um, the reflecting effect to light was both can ensure that, to meet light efficiency Raising demand, is unlikely to cause epitaxial wafer integral thickness excessive again.
Presently preferred embodiments of the present invention is these are only, it is all in the spirit and principles in the present invention not to limit the present invention Within, any modification, equivalent substitution and improvements made etc. should be included within the scope of the present invention.

Claims (10)

1. a kind of New LED epitaxial wafer, the New LED epitaxial wafer includes：Substrate, and be sequentially coated on the substrate U-shaped GaN layer, N-type GaN layer, multiple quantum well active layer and p-type GaN carrier layer, the multiple quantum well active layer includes alternately giving birth to Long multiple InGaN well layer and multiple GaN barrier layer；
Characterized in that, the New LED epitaxial wafer also includes：The GaN being covered in the p-type GaN carrier layer highlights layer, The GaN highlights layer and multiple projections, the raised height is distributed with away from uniform intervals in the one side of p-type GaN carrier layer For 0.2-1.5um.
2. New LED epitaxial wafer according to claim 1, it is characterised in that it is T that the GaN highlights the growth temperature of layer： 900℃≤T≤1000℃。
3. New LED epitaxial wafer according to claim 1, it is characterised in that it is P that the GaN highlights the growth pressure of layer： 150torr≤P≤680torr。
4. the New LED epitaxial wafer according to any one of claims 1 to 3, it is characterised in that the GaN highlights layer growth When be passed through TMGa as Ga sources, the flow of the TMGa is m：50sccm≤m≤200sccm.
5. the New LED epitaxial wafer according to any one of claims 1 to 3, it is characterised in that the GaN highlights layer growth When be passed through (C5H5)2Mg is used as Mg the sources, (C5H5)2The flow of Mg is m1：50sccm≤m1≤200sccm.
6. a kind of New LED extension piece preparation method, it is characterised in that methods described includes：
One substrate is provided；
Grow u-shaped GaN layer and N-type GaN layer successively over the substrate；
The multiple quantum well active layer is grown in the N-type GaN layer, the multiple quantum well active layer includes many of alternating growth Individual InGaN well layer and multiple GaN barrier layer；
The growth P-type GaN carrier layer in the multiple quantum well active layer；
GaN is grown in many p-type GaN carrier layers and highlights layer, the GaN highlights layer away from the one of p-type GaN carrier layer Uniform intervals are distributed with multiple projections on face, and the raised height is 0.2-1.5um.
7. method according to claim 6, it is characterised in that described to grow GaN in many p-type GaN carrier layers Layer is highlighted, including：
Growth temperature be 900 DEG C～1000 DEG C, growth pressure be 200mbar～900mbr in the environment of, in many p-types GaN is grown in GaN carrier layers and highlights layer.
8. the method according to claim 6 or 7, it is characterised in that the GaN is highlighted when layer grows and is passed through TMGa as Ga Source, the flow of the TMGa is m：50sccm≤m≤200sccm.
9. the method according to claim 6 or 7, it is characterised in that the GaN is highlighted when layer grows and is passed through (C5H5)2Mg makees For Mg the sources, (C5H5)2The flow of Mg is m1：50sccm≤m1≤200sccm.
10. the method according to claim 6 or 7, it is characterised in that the GaN highlights layer in N2Grown under environment.
CN201610928886.5A 2016-10-31 2016-10-31 Novel LED epitaxial wafer and preparation method thereof Active CN106571415B (en)

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101257068A (en) * 2007-03-02 2008-09-03 甘志银 Method for enhancing light extraction efficiency of high power light-emitting diode
CN103367585A (en) * 2012-03-30 2013-10-23 清华大学 Light emitting diode
CN104157751A (en) * 2014-08-27 2014-11-19 圆融光电科技有限公司 LED growth method for P-type layer coarsening

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101257068A (en) * 2007-03-02 2008-09-03 甘志银 Method for enhancing light extraction efficiency of high power light-emitting diode
CN103367585A (en) * 2012-03-30 2013-10-23 清华大学 Light emitting diode
CN104157751A (en) * 2014-08-27 2014-11-19 圆融光电科技有限公司 LED growth method for P-type layer coarsening

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