CN106488658B - Seed layer rapid etching method for high-density substrate semi-addition process - Google Patents
Seed layer rapid etching method for high-density substrate semi-addition process Download PDFInfo
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- CN106488658B CN106488658B CN201611234175.4A CN201611234175A CN106488658B CN 106488658 B CN106488658 B CN 106488658B CN 201611234175 A CN201611234175 A CN 201611234175A CN 106488658 B CN106488658 B CN 106488658B
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
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Abstract
The invention discloses a seed layer rapid etching device and an etching method for a high-density substrate semi-addition process, wherein the rapid etching device comprises a rapid-discharge cleaning tank for washing a workpiece to be processed, an anodic oxidation corrosion tank for carrying out corrosion and roughening treatment on the workpiece to be processed, a microetching tank for etching the workpiece to be processed, the surface of which is not etched cleanly, and a drying tank for drying the workpiece to be processed; the to-be-machined piece comprises a high-density substrate, a metal seed layer is attached to the substrate, and a pattern electroplating circuit is arranged on the metal seed layer; and the to-be-processed workpiece subjected to the semi-addition treatment is suspended in the grooves in sequence through a metal hanger in a vertical hanging plate mode according to the technological process to finish the rapid etching. The invention completes the seed layer etching and the surface roughening at one time, shortens the process flow and the processing time, reduces the process cost and improves the processing efficiency.
Description
Technical Field
The invention relates to the technical field of PCB substrate packaging, in particular to an etching device and an etching method for a high-density substrate seed layer.
Background
The printed board manufacturing process includes three processes, namely an addition method, a semi-addition method and a partial addition method. The traditional semi-addition method is to adopt an ultrathin copper foil or an electroless copper plating layer as a seed layer to carry out pattern electroplating to form a circuit, strip a pattern dry film after the circuit electroplating is completed, etch the seed layer copper below the dry film through quick etching liquid medicine, carry out surface treatment on the copper circuit to form a circuit surface with certain roughness through one-time super-roughening corrosion treatment, and then carry out lamination treatment on an outer layer prepreg. This process requires two etches, and is relatively long and complex.
Disclosure of Invention
The invention aims to provide a seed layer rapid etching device and an etching method for a high-density substrate semi-addition process, so as to shorten the process flow, reduce the process cost and improve the processing efficiency.
In order to solve the technical problems, the technical scheme adopted by the invention is as follows.
The seed layer rapid etching device of the high-density substrate semi-addition process comprises a rapid-discharge cleaning tank for washing a workpiece to be processed, an anodic oxidation corrosion tank for carrying out corrosion and roughening treatment on the workpiece to be processed, a microetching tank for etching the workpiece to be processed, the surface of which is not etched cleanly, and a drying tank for drying the workpiece to be processed; the to-be-machined piece comprises a high-density substrate, a metal seed layer is attached to the substrate, and a pattern electroplating circuit is arranged on the metal seed layer; and the to-be-processed workpiece subjected to the semi-addition treatment is suspended in the grooves in sequence through a metal hanger in a vertical hanging plate mode according to the technological process to finish the rapid etching.
The high-density substrate semi-addition process seed layer rapid etching device comprises a cross beam and two supports vertically arranged at two ends of the cross beam, a to-be-machined piece is fixed on the metal hanger, and the metal seed layer of the to-be-machined piece is connected with the supports of the metal hanger.
The seed layer rapid etching device for the high-density substrate semi-addition process comprises a rapid-discharge cleaning tank and a wastewater tank arranged below the cleaning tank, wherein the bottom end of the cleaning tank is communicated with a water inlet of the wastewater tank through a rapid-discharge valve; the inner wall of the middle upper part of the cleaning tank is provided with a high-purity water spraying opening for spraying high-purity water to a workpiece to be processed suspended in the cleaning tank.
According to the seed layer rapid etching device for the high-density substrate semi-addition process, the inner wall of the bottom of the cleaning tank is provided with the nitrogen bulge tube for spraying gas to the high-purity water in the cleaning tank to stir the high-purity water, and the nitrogen bulge tube is communicated with the nitrogen source arranged outside the cleaning tank.
The seed layer rapid etching device for the high-density substrate semi-addition process comprises an anodic oxidation corrosion groove, wherein the anodic oxidation corrosion groove comprises a corrosion groove filled with electrolyte, a cathode plate opposite to a to-be-machined piece is suspended in the corrosion groove, and a battery for providing power for the to-be-machined piece and the cathode plate is arranged outside the corrosion groove.
The seed layer rapid etching device for the high-density substrate semi-addition process comprises a microetching groove body filled with microetching liquid medicine, wherein a circulating jet orifice for jetting microetching liquid medicine to a workpiece to be processed is arranged on the inner wall of the microetching groove body immersed with the microetching liquid medicine; the bottom of the microetching groove body is provided with a nitrogen bubbling pipe for spraying gas to microetching liquid medicine in the microetching groove so as to stir the microetching liquid medicine.
The seed layer rapid etching device for the high-density substrate semi-addition process comprises a drying groove body, wherein an upper nozzle facing to a to-be-processed workpiece is arranged on the inner wall of the drying groove body above the to-be-processed workpiece, and a plurality of horizontal nozzles with downward inclined nozzles are arranged on the inner wall of the drying groove body surrounding the to-be-processed workpiece; the bottom of the drying groove body is in a funnel shape, and a water outlet is arranged at the bottom of the funnel-shaped drying groove body.
According to the seed layer rapid etching device for the high-density substrate semi-addition process, the uniform flow plate is arranged in the drying groove body, the exhaust pipe which is communicated with the outside is arranged on the side wall of the drying groove body positioned at the bottom of the uniform flow plate and the funnel shape, and the air inlet of the exhaust pipe is arranged towards the water outlet.
A seed layer rapid etching method for a high-density substrate semi-addition process specifically comprises the following steps:
A. vertically hanging a workpiece to be processed in a quick-discharge cleaning tank, and washing for 2-3 times to remove residual particles on the surface of the substrate;
B. vertically hanging the washed workpiece to be processed in an anodic oxidation corrosion groove, and immersing the workpiece to be processed in electrolyte; connecting a metal hanger of a to-be-machined piece with the anode of the battery by adopting a lead, and connecting the cathode of the battery with a cathode plate; carrying out integral anodic oxidation to quickly etch out metal of the electroplating seed layer, and roughening the surface of the electroplating line;
C. vertically hanging the corroded workpiece to be processed in a quick-discharge cleaning tank, and washing for at least 5 times;
D. vertically hanging the washed workpiece to be processed in a microetching groove, enabling the workpiece to be processed to be immersed in microetching liquid, and corroding copper residual particles in the copper teeth which are not corroded;
E. vertically hanging the microetched workpiece to be processed in a quick-discharge cleaning tank, and washing for at least 5 times;
F. and vertically hanging the washed workpiece to be processed in a drying groove, filling nitrogen with the temperature of 60 ℃ into the drying groove, fully opening an upper nozzle and a horizontal nozzle, and drying for 3-5 minutes.
In the rapid etching method of the seed layer of the high-density substrate semi-addition process, 2-10% by weight of sulfuric acid is adopted as the electrolyte in the step B, and the electrolytic current is 0.1A/cm 2 -0.6A/dm 2 。
By adopting the technical scheme, the invention has the following technical progress.
According to the invention, the seed layer ultrathin copper foil or the chemical copper plating layer used in the semi-addition technology is corroded through one-time electrochemical corrosion, and the copper circuit surface is roughened and corroded to form the copper circuit with certain roughness, so that the follow-up prepreg lamination is facilitated, the seed layer etching and the surface roughening are completed at one time, the process flow and the processing time are shortened, the process cost is reduced, and the processing efficiency is improved.
Drawings
FIG. 1 is a schematic diagram of a rapid etching apparatus according to the present invention;
FIG. 2 is a schematic view of a metal hanger in a rapid etching apparatus according to the present invention;
FIG. 3 is a schematic diagram of a fast drain cleaning tank in the fast etching apparatus according to the present invention;
FIG. 4 is a schematic view of an anodic oxidation etching bath in a rapid etching apparatus according to the present invention;
FIG. 5 is a schematic diagram of a microetching groove in a rapid etching apparatus according to the present invention;
FIG. 6 is a schematic diagram of a drying tank in the rapid etching apparatus according to the present invention;
FIG. 7 is a schematic diagram of a structure of a substrate after pattern plating according to the present invention;
FIG. 8 is a schematic diagram of the electrical connection of a substrate in an anodic oxidation etch tank according to the present invention;
FIG. 9 is a schematic diagram of the circuit of the substrate after etching according to the present invention.
Wherein: 1. quick drain tank, 11, tank, 12, waste water tank, 13, quick drain valve, 14, high purity water, 15, nitrogen flush pipe, 16, high purity water spray port, 17, drain port, 2, anodic oxidation corrosion tank, 21, corrosion tank, 22, electrolyte, 23, cathode plate, 24, battery, 3, microetching tank, 31, microetching tank, 32, microetching liquid, 33, circulation jet, 4, drying tank, 41, drying tank, 42, leveling plate, 43, upper jet, 44, horizontal jet, 45, drain port, 46, exhaust pipe, 5, metal hanger, 51, cross beam, 52, bracket, 6, work piece, 61, substrate, 62, metal seed layer, 63, graphic plating line.
Detailed Description
The invention will be described in further detail with reference to the drawings and the specific embodiments.
The work piece 6 mentioned in the present invention refers to a high-density substrate 61 to which a metal seed layer and a pattern line are attached, wherein a metal seed layer 62 is attached to the upper surface of the substrate 61, and a pattern plating line 63 is provided on the metal seed layer 62. The metal seed layer in the invention can be an electroless copper plating layer, and is usually about 1um thick; or ultrathin copper foil 1-3um; the thickness of the seed layer is far smaller than the thickness of the circuit electroplated copper, and is generally 10-15 times different, and in electrochemical corrosion, the seed layer is used for corroding and corroding the copper through anodic oxidation and dissolution of the copper in an electrochemical anodic oxidation process, so that the circuit can still be reserved, and the circuit wiring is formed.
The to-be-processed workpiece 6 sequentially passes through a quick-discharge cleaning tank, an anodic oxidation corrosion tank, a quick-discharge cleaning tank for more than 5 times of water washing, a microetching tank for microetching, a water washing tank for more than 5 times of water washing and a drying tank for hot nitrogen drying to finish quick etching.
The structure of the rapid etching device used in the invention is shown in figure 1, and the rapid etching device comprises a rapid-discharge cleaning tank 1, an anodic oxidation corrosion tank 2, a microetching tank 3 and a drying tank 4, wherein a workpiece to be processed adopts a vertical hanging plate mode, and is suspended in the tanks in sequence through a metal hanger 5 according to the process flow to finish rapid etching.
The structure of the metal hanger 5 is shown in fig. 2, and comprises a cross beam 51 and two brackets 52 vertically arranged at two ends of the cross beam, a to-be-machined piece is fixed between the two brackets 52 of the metal hanger, and a metal seed layer of the to-be-machined piece is connected with the brackets of the metal hanger, so that the metal seed layer is electrically connected by electrifying the metal hanger in a subsequent process.
The quick-discharge cleaning tank 1 is used for washing a workpiece 6 to be processed, and has the functions of rinsing, soaking and washing. The structure of the device is shown in fig. 3, and the device comprises a cleaning tank 11 and a wastewater tank 12 arranged below the cleaning tank, wherein the bottom end of the cleaning tank 11 is communicated with the water inlet of the wastewater tank 12 through a quick discharge valve 13. A high-purity water spray opening 16 is provided on the inner wall of the upper middle portion of the cleaning tank 11 for spraying high-purity water to the workpiece to be processed suspended in the cleaning tank to effect rinsing. Be provided with nitrogen bulge tube 15 on the inner wall of washing tank 11 bottom, nitrogen bulge tube 15 communicates with the nitrogen source that sets up outside the washing tank, is provided with a plurality of pinholes on the pipe wall of nitrogen bulge tube 15 for to the high-purity water injection nitrogen gas in the washing tank, in order to stir the high-purity water, improve the cleaning performance. The quick-release valve 13 is a large-sized valve that can be opened and closed quickly, and can be opened quickly after the washing is completed, so that the high-purity water used for washing can be discharged to the waste water tank quickly. The bottom of the waste water tank 12 is provided with a water outlet 17 for discharging used waste water, and the high-purity water is washed for one-time use without circulating washing.
The anodic oxidation corrosion groove 2 is used for carrying out corrosion and roughening treatment on a workpiece to be processed. The structure of the device is shown in fig. 4, and the device comprises an etching tank 21 filled with electrolyte, a cathode plate 23 opposite to a workpiece to be processed is hung in the etching tank 21, and a battery 24 for supplying power to the workpiece to be processed 6 and the cathode plate 23 is arranged outside the etching tank 21. The electrolyte in the corrosion tank does not have chemical corrosiveness to copper, the metal hanger is connected with the anode of the battery, the cathode plate of the corrosion tank is connected with the cathode of the battery, the metal of the electroplating seed layer can be quickly corroded by integral anodic oxidation, and meanwhile, the surface of the electroplating circuit is roughened.
The inner wall of the corrosion tank 21 is also provided with a nitrogen bulge tube 15 for spraying nitrogen to the electrolyte in the corrosion tank, so as to realize stirring and jet flow of the electrolyte and improve the corrosion uniformity and the corrosion uniformity of copper particles in the hair.
Because the copper layer on the surface of the substrate and the substrate are combined, the surface is required to have certain roughness, the copper circuit of the substrate can be well combined with the substrate, and the roughness is generally in the range of Ra=0.2 micrometers and rz=2-4 micrometers; thus, a surface deposited copper layer with certain roughness, whether electroless copper plating or laminated electroplating seed layer, can form a circuit with certain bonding force. However, copper grains of the electroplated copper line are thicker, the etching rate is slower in common etching liquid, the molecular energy of the boundary edge is higher in electrochemical corrosion, the copper grains can be corroded at a faster anodic oxidation corrosion rate in the electrochemical corrosion process, protrusions of the grains are formed, the surface of the copper line is rougher, and the requirement of pressing pretreatment is met.
In the invention, the anodic oxidation corrosion groove is used for carrying out corrosion and roughening treatment on the workpiece to be processed, namely, in the electrochemical corrosion process, the seed layer is quickly dissolved out through anodic oxidation, and the surface of the electroplated copper line is roughened and corroded to form a rough surface suitable for pressing, so that the binding force between the copper line and the outer layer insulating material is improved.
After the surface of the copper alloy is continuously plated with electroless copper or the ultrathin copper layer is removed by anodic oxidation, copper teeth between concave areas on the surface of the rough substrate are not continuous any more, and discontinuous copper teeth cannot be removed by anodic oxidation. Therefore, it is necessary to perform oxidation etching on copper teeth on a rough surface after the continuous surface copper is etched by anodic oxidation, and to rapidly etch the copper teeth through microetching grooves.
The microetching groove 3 is used for etching residual copper teeth on a workpiece which is not etched cleanly on the surface after anodic oxidation etching. The structure of the microetching groove is shown in fig. 5, and comprises a microetching groove body 31 filled with microetching liquid medicine, wherein a circulating jet orifice 33 is arranged on the inner wall of the microetching groove body 31 immersed with the microetching liquid medicine and used for jetting the microetching liquid medicine to a workpiece to be processed. In the invention, a plurality of circulation jet ports are arranged on the inner walls of the corresponding two-sided microetching groove bodies 31 of the workpiece to be processed, microetching liquid is jetted to the workpiece to be processed under a certain pressure, so that the corrosion efficiency and uniformity are improved; the microetching liquid medicine is sprayed out through the circulation spraying port under a certain pressure, so that the corrosion of the microetching liquid medicine to copper particles remained in the pits on the surface of the rough substrate is effectively improved, corrosion products are easy to leave under the impact of the microetching liquid medicine, new microetching liquid medicine is subjected to uninterrupted exchange on the surfaces of the copper particles, and the corrosion rate and uniformity are improved.
The bottom of the microetching groove body 31 is provided with a nitrogen bubbling pipe 15 for spraying nitrogen to microetching liquid medicine in the microetching groove to stir the microetching liquid medicine.
The drying groove 4 is used for drying the workpiece to be processed. The structure of the device is shown in fig. 6, and the device comprises a drying groove 41, wherein gas sprayed into the drying groove is high-temperature nitrogen, and the drying groove is made of PP material or metal stainless steel. An upper nozzle 43 facing the to-be-processed workpiece is arranged on the inner wall of the drying groove 41 above the to-be-processed workpiece, and a plurality of upper nozzles are arranged on the upper side in a straight line, so that the upper nozzle can be blown to the uppermost position of the substrate. The inner wall of the drying groove 41 of the ring to-be-processed workpiece is provided with a plurality of horizontal spouts 44 which are arranged in a matrix and uniformly incline downwards to cover the whole range of the substrate. The upper nozzle is at a certain distance from the horizontal nozzle, so that water on the hanging rack on the substrate can be blown to the upper nozzle.
The bottom of the drying groove 41 is shaped like a funnel, and a water outlet 45 is arranged at the bottom of the funnel-shaped drying groove 41. The drying tank 41 is internally provided with a uniform flow plate 42, through holes are distributed on the uniform flow plate in a close-packed way, and the uniform flow plate is mainly used for blowing and drying a channel through which nitrogen flows downwards and water blown down from the surface of the substrate flows through the uniform flow plate, flows into a water outlet and is discharged through the water outlet. The side wall of the drying groove body 41 positioned at the bottom of the uniform flow plate and the funnel is provided with an exhaust pipe 46 leading to the outside, and the used nitrogen is discharged through the exhaust pipe, and the nitrogen can be uniformly discharged as perpendicular to the uniform flow plate as possible under the uniform flow effect of the uniform flow plate, so that the nitrogen born on the substrate is uniform. In the invention, the air inlet of the exhaust pipe 46 is arranged towards the water outlet, namely, the exhaust pipe is provided with a bent downward opening after entering the drying groove, so that water from the uniform flow plate cannot enter the exhaust pipe.
During operation of the drying tank, nitrogen blows the cleaning solution at the upper part of the substrate downwards through the upper nozzle, then drives the cleaning solution downwards through the horizontal nozzle, all the horizontal nozzles incline downwards, the cleaning solution on the surface of the cleaned substrate is quickly driven downwards until the cleaning solution is left to the uniform flow plate through the surface of the substrate, is left to the water outlet through holes on the uniform flow plate, and is discharged through the water outlet; the residual water film on the surface of the substrate is quickly gasified under the strong blowing of nitrogen, so that the surface of the substrate is quickly dried.
A method for rapidly etching seed layer of high-density substrate semi-additive process specifically comprises the following steps.
A. And vertically hanging the workpiece to be processed in a quick-discharge cleaning tank, and washing for 2-3 times to remove residual particles on the surface of the substrate.
The specific water washing process is as follows: opening a quick-release valve, leaching for 3 seconds to 1 minute, closing the quick-release valve, spraying water injection until the water surface exceeds the upper edge of a workpiece to be processed by 2 cm, closing spraying, and opening nitrogen to bubble for 30 seconds; the quick-release valve is opened, spraying is simultaneously opened, and nitrogen bubbling is closed, so that one-time water washing is completed. In the whole cleaning process, the workpiece to be processed is soaked in pure water or is leached in spraying.
B. Vertically hanging the washed workpiece to be processed in an anodic oxidation corrosion groove, and immersing the workpiece to be processed in electrolyte; connecting a metal hanger of a to-be-machined piece with the anode of the battery by adopting a lead, and connecting the cathode of the battery with a cathode plate; and (3) carrying out integral anodic oxidation to quickly etch out metal of the electroplating seed layer, and roughening the surface of the electroplating line.
In the step, 2 to 10 percent of sulfuric acid by weight is adopted as electrolyte, and the electrolysis current is controlled to be 0.1A/cm 2 -0.6A/dm 2 Until the metal seed layer is etched completely.
C. And vertically hanging the corroded workpiece to be processed in a quick-drain cleaning tank, and washing for at least 5 times. The water washing process is as in step A.
D. And vertically hanging the washed workpiece to be processed in the microetching groove, enabling the workpiece to be processed to be immersed in microetching liquid, and corroding copper residual particles in the copper teeth which are not corroded.
E. And vertically hanging the microetched workpiece to be processed in a quick-discharge cleaning tank, and washing for at least 5 times. The water washing process is as in step A.
F. And vertically hanging the washed workpiece to be processed in a drying groove, filling nitrogen with the temperature of 60 ℃ into the drying groove, fully opening an upper nozzle and a horizontal nozzle, and drying for 3-5 minutes.
The invention has short process flow, the seed layer rapid etching and the circuit surface roughening are completed in one step through anodic oxidation, and the flash etching and the pressing pretreatment are completed by using the electroplating bath, so that the processing time is shortened, the processing efficiency is improved, only one device and one liquid medicine are used, and the cost of the device and the material is reduced.
Claims (2)
1. The seed layer rapid etching method for the high-density substrate semi-addition process is characterized by comprising the following steps of:
A. vertically hanging a workpiece to be processed in a quick-discharge cleaning tank, and washing for 2-3 times to remove residual particles on the surface of the substrate;
B. vertically hanging the washed workpiece to be processed in an anodic oxidation corrosion groove, and immersing the workpiece to be processed in electrolyte; connecting a metal hanger of a to-be-machined piece with the anode of the battery by adopting a lead, and connecting the cathode of the battery with a cathode plate; carrying out integral anodic oxidation to quickly etch out metal of the electroplating seed layer, and roughening the surface of the electroplating line;
C. vertically hanging the corroded workpiece to be processed in a quick-discharge cleaning tank, and washing for at least 5 times;
D. vertically hanging the washed workpiece to be processed in a microetching groove, enabling the workpiece to be processed to be immersed in microetching liquid, and corroding copper residual particles in the copper teeth which are not corroded;
E. vertically hanging the microetched workpiece to be processed in a quick-discharge cleaning tank, and washing for at least 5 times;
F. and vertically hanging the washed workpiece to be processed in a drying groove, filling nitrogen with the temperature of 60 ℃ into the drying groove, fully opening an upper nozzle and a horizontal nozzle, and drying for 3-5 minutes.
2. The method for rapid etching of a seed layer in a high-density substrate semi-additive process of claim 1, wherein: the electrolyte in the step B adopts 2 to 10 percent of sulfuric acid with the electrolytic current of 0.1A/cm 2 -0.6A/dm 2 。
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| CN110972412A (en) * | 2019-12-10 | 2020-04-07 | 荣晖电子(惠州)有限公司 | Novel PCB copper deposition process improvement method |
| CN115985880A (en) * | 2022-12-06 | 2023-04-18 | 武汉新创元半导体有限公司 | Novel packaging substrate with function of adapter plate and manufacturing method thereof |
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| CN103510089A (en) * | 2012-06-29 | 2014-01-15 | 三菱瓦斯化学株式会社 | Liquid composition for etching and preparing method of multilayer printed wiring board using same |
| CN103556211A (en) * | 2013-10-14 | 2014-02-05 | 刘刚 | Printed circuit board copper surface microetching and coarsening method and equipment thereof |
| JP2014029011A (en) * | 2012-06-29 | 2014-02-13 | Mitsubishi Gas Chemical Co Inc | Liquid composition for etching and method for producing multilayer printed board using the same |
| CN105848421A (en) * | 2016-04-18 | 2016-08-10 | 王靖 | Difference etching solution for semi-additive process preparation fine line |
| CN206332924U (en) * | 2016-12-28 | 2017-07-14 | 华进半导体封装先导技术研发中心有限公司 | The additive process Seed Layer fast-etching device of high-density base board half |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103510089A (en) * | 2012-06-29 | 2014-01-15 | 三菱瓦斯化学株式会社 | Liquid composition for etching and preparing method of multilayer printed wiring board using same |
| JP2014029011A (en) * | 2012-06-29 | 2014-02-13 | Mitsubishi Gas Chemical Co Inc | Liquid composition for etching and method for producing multilayer printed board using the same |
| CN103556211A (en) * | 2013-10-14 | 2014-02-05 | 刘刚 | Printed circuit board copper surface microetching and coarsening method and equipment thereof |
| CN105848421A (en) * | 2016-04-18 | 2016-08-10 | 王靖 | Difference etching solution for semi-additive process preparation fine line |
| CN206332924U (en) * | 2016-12-28 | 2017-07-14 | 华进半导体封装先导技术研发中心有限公司 | The additive process Seed Layer fast-etching device of high-density base board half |
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