CN206332924U - The additive process Seed Layer fast-etching device of high-density base board half - Google Patents
The additive process Seed Layer fast-etching device of high-density base board half Download PDFInfo
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- CN206332924U CN206332924U CN201621453638.1U CN201621453638U CN206332924U CN 206332924 U CN206332924 U CN 206332924U CN 201621453638 U CN201621453638 U CN 201621453638U CN 206332924 U CN206332924 U CN 206332924U
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- seed layer
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Abstract
The utility model discloses a kind of additive process Seed Layer fast-etching device of high-density base board half, including for washed to machined part clear soon washing trough, for corroded to machined part and roughening treatment anodic oxidation etching tank, for not etching microetch groove that clean workpiece to be added is etched and drying tank for being dried to machined part to surface；The workpiece to be added, which includes being attached with metal seed layer, metal seed layer on high-density base board, substrate, is provided with graphic plating circuit；The workpiece to be added handled through half addition is suspended in above-mentioned each groove successively in vertical hanging board mode by metal hanging rack according to technological process completes fast-etching.The utility model once completes Seed Layer etching and surface coarsening, shortens technological process and process time, reduces process costs, improves processing efficiency.
Description
Technical field
The utility model is related to PCB substrate encapsulation technology field, the etching dress of particularly a kind of high-density base board Seed Layer
Put.
Background technology
In printed board manufacturing process, there are addition process, three kinds of techniques of semi-additive process and part addition process.Wherein, it is traditional
Semi-additive process is to carry out graphic plating formation circuit as Seed Layer using extra thin copper foil or chemical plating copper layer, and circuit plating is completed
Afterwards, figure dry film is peelled off, the Seed Layer copper below dry film is etched away by fast-etching liquid medicine, then it is rotten by once surpassing roughening
Erosion is handled, and copper wire is carried out into surface treatment forms the circuit surface with certain roughness, then carries out outer layer prepreg
Pressing is handled.This process needs to etch twice, and flow is longer, and technique is complex.
The content of the invention
It is quick that the utility model technical issues that need to address are to provide a kind of additive process Seed Layer of high-density base board half
Etaching device, to shorten technological process, reduces process costs, improves processing efficiency.
In order to solve the above technical problems, technical solution adopted in the utility model is as follows.
The additive process Seed Layer fast-etching device of high-density base board half, including it is fast for what is washed to machined part
Clear washing trough, for corroded to machined part and roughening treatment anodic oxidation etching tank, dry for not etched to surface
The microetch groove that net workpiece to be added is etched and the drying tank for being dried to machined part；The workpiece bag to be added
Include to be attached with high-density base board, substrate on metal seed layer, metal seed layer and be provided with graphic plating circuit；At half addition
The workpiece to be added of reason is suspended in above-mentioned each groove successively in vertical hanging board mode by metal hanging rack according to technological process completes fast
Speed etching.
The additive process Seed Layer fast-etching device of above-specified high density substrate half, the metal hanging rack includes crossbeam and vertical
Be arranged on two supports at crossbeam two ends, the workpiece to be added is fixed on metal hanging rack, the metal seed layer of workpiece to be added with
The support of metal hanging rack connects.
The additive process Seed Layer fast-etching device of above-specified high density substrate half, it is described clear soon washing trough including rinse bath and
The waste water tank below rinse bath is arranged on, realizes connection with dividing by fast-discharge valve between rinse bath bottom and waste water tank water inlet
From；The oriented workpiece to be added being suspended in rinse bath is set to spray the high purity water of high purity water on the middle and upper part inwall of the rinse bath
Mouth spray.
Set on the additive process Seed Layer fast-etching device of above-specified high density substrate half, the inwall of the bottom of rinse bath
Have for the high purity water gas injection into rinse bath to stir the nitrogen bulge pipe of high purity water, nitrogen bulge pipe is clear with being arranged on
Source nitrogen connection outside washing trough.
The additive process Seed Layer fast-etching device of above-specified high density substrate half, the anodic oxidation etching tank includes filling
To have be hung with the etching tank of electrolyte, etching tank be provided with outside the minus plate relative with workpiece to be added, etching tank to be to be processed
Part and minus plate provide the battery of power supply.
The additive process Seed Layer fast-etching device of above-specified high density substrate half, the microetch groove includes being loaded with microetch medicine
The circulation spray of oriented part injection microetch liquid medicine to be processed is set on the microetch cell body of water, the microetch cell body inwall for submerging microetch liquid medicine
Loophole；The bottom of the microetch cell body is provided with for the microetch liquid medicine gas injection into microetch groove to stir microetch liquid medicine
Nitrogen bulge pipe.
The additive process Seed Layer fast-etching device of above-specified high density substrate half, the drying tank includes drying cell body, position
The upper spout towards workpiece to be added, the drying cell body of ring workpiece to be added are provided with drying tank body above workpiece to be added on wall
The downward-sloping horizontal spout of some spouts is provided with inwall；The bottom funnel of the drying cell body, funnel-form drying
Cell body bottom is provided with delivery port.
Uniform flow is provided with the additive process Seed Layer fast-etching device of above-specified high density substrate half, the drying tank body
Plate, is provided with the exhaust duct for leading to the external world, the air intake of exhaust duct on the drying tank body sidewall of even flow plate and bottom funnel-shaped portion
Mouth is set towards delivery port.
As a result of above technical scheme, technological progress acquired by the utility model is as follows.
The utility model corrodes the Seed Layer extra thin copper foil or chemistry that will be used in half addition technology by primary electrochemical
Copper plate is eroded, and copper wire surface is carried out into copper wire of the roughening corrosion formation with certain roughness, so as to follow-up half
The pressing of cured sheets, Seed Layer etching and surface coarsening are once completed, technological process and process time is shortened, reduces
Process costs, improve processing efficiency.
Brief description of the drawings
Fig. 1 is structural representation of the present utility model；
Fig. 2 is the structural representation of metal hanging rack described in the utility model；
Fig. 3 is the structural representation described in the utility model for clearing washing trough soon；
Fig. 4 is the structural representation of anodic oxidation etching tank described in the utility model；
Fig. 5 is the structural representation of microetch groove described in the utility model；
Fig. 6 is the structural representation of drying tank described in the utility model；
Fig. 7 is that substrate described in the utility model carries out the structural representation after graphic plating；
Fig. 8 electrically connects schematic diagram for substrate described in the utility model in anodic oxidation etching tank；
Fig. 9 is the base plate line schematic diagram after the completion of the utility model is etched.
Wherein：1. washing trough is cleared soon, 11. rinse baths, 12. waste water tanks, 13. fast-discharge valves, 14. high purity waters, 15. nitrogen bulges
Pipe, 16. high purity water mouth sprays, 17. discharge outlet, 2. anodic oxidation etching tanks, 21. etching tanks, 22. electrolyte, 23. minus plates,
24. battery, 3. microetch grooves, 31. microetch cell bodies, 32. microetch liquid medicine, 33. cyclic sprays mouthful, 4. drying tanks, 41. drying cell bodies,
42. even flow plate, spout, 44. horizontal spouts, 45. delivery ports, 46. exhaust ducts, 5. metal hanging racks, 51. crossbeams, 52. on 43.
Frame, 6. workpiece to be added, 61. substrates, 62. metal seed layers, 63. graphic plating circuits.
Embodiment
The utility model is further elaborated below in conjunction with the drawings and specific embodiments.
Workpiece to be added 6 mentioned in the utility model refers to the high density base for being attached with metal seed layer and figure circuit
Plate 61, wherein metal seed layer 62 are attached to the upper surface of substrate 61, and graphic plating circuit 63 is arranged on metal seed layer 62.This
Metal seed layer in utility model can be chemical plating copper layer, usually 1um thickness or so；Can also be extra thin copper foil 1-
3um；The thickness of Seed Layer be much smaller than the copper-plated thickness of line electricity, general 10-15 times of difference, in electrochemical corrosion, seed
Copper anode oxidation dissolution is corroded eating away by layer by electrochemical anodic oxidation process, and circuit remains to retain, and forms line layout.
Workpiece 6 to be added, which to be sequentially passed through, clear soon washing trough, anodic oxidation etching tank, clears washing trough washing more than 5 times, microetch soon
Groove microetch, rinsing bowl washing more than 5 times, drying tank hot nitrogen dry to complete fast-etching.
A kind of additive process Seed Layer fast-etching device of high-density base board half, its structure as shown in figure 1, including clearing soon
Washing trough 1, anodic oxidation etching tank 2, microetch groove 3 and drying tank 4, workpiece to be added use vertical hanging board mode, pass through metal hanging
Frame 5 is suspended in above-mentioned each groove and completes fast-etching successively according to technological process.
The structure of metal hanging rack 5 as shown in Fig. 2 including crossbeam 51 and two supports 52 for being vertically set on crossbeam two ends,
Workpiece to be added is fixed between two supports 52 of metal hanging rack, the metal seed layer of workpiece to be added and the support phase of metal hanging rack
Connect, to realize the electrical connection to metal seed layer by being powered to metal hanging rack in subsequent technique.
Clearing washing trough 1 soon is used to 6 be washed to machined part, with elution and soaking and water washing function.Its structure such as Fig. 3
It is shown, including rinse bath 11 and the waste water tank 12 that is arranged on below rinse bath, the bottom of rinse bath 11 and the water inlet of waste water tank 12 it
Between by fast-discharge valve 13 realize connection with separating.High purity water mouth spray 16 is provided with the middle and upper part inwall of rinse bath 11, is used for
High purity water is sprayed to the workpiece to be added being suspended in rinse bath, realizes and rinses.Nitrogen is provided with the inwall of the bottom of rinse bath 11
Bulge pipe 15, nitrogen bulge pipe 15 is connected with the source nitrogen being arranged on outside rinse bath, is provided with the tube wall of nitrogen bulge pipe 15
Multiple pin-and-holes, nitrogen is sprayed for the high purity water into rinse bath, to stir high purity water, improves cleaning performance.Fast-discharge valve 13 is
The large scale valve that can be opened and closed rapidly, can quickly be opened after the completion of cleaning, so as to by rinse use up it is high-purity
Water is discharged rapidly towards waste water tank.The bottom of waste water tank 12 is provided with discharge outlet 17, for discharging used waste water, rinses high purity water complete
Portion is disposable, does not do circulation flushing.
Anodic oxidation etching tank 2 is used to machined part be corroded and roughening treatment.Its structure as shown in figure 4, including
The minus plate 23 relative with workpiece to be added, the peripheral hardware of etching tank 21 are hung with etching tank 21 filled with electrolyte, etching tank 21
It is equipped with the battery 24 for workpiece 6 to be added and the offer power supply of minus plate 23.Electrolyte in etching tank and without the change for copper
Corrosivity is learned, metal hanging rack is connected into anode, the minus plate connection GND of etching tank just can make overall anodic oxidation
Fast erosion falls plating seed layer metal, while electroplating line surface is roughened.
Nitrogen bulge pipe 15 is also equipped with the inwall of etching tank 21, nitrogen is sprayed for the electrolyte into etching tank,
Stirring and the jet flow of electrolyte are realized, the erosion uniformity of the uniformity of corrosion and the copper particle to Mao Yanei is improved.
Need the surface there is certain roughness because the layers of copper of substrate surface is combined with substrate, substrate copper wire could be with
Substrate formation good combination, roughness is typically in Ra=0.2 microns, Rz=2-4 microns of scope；So with certain roughness
The layers of copper of surface deposition, the plating seed layer that either electroless copper is still pressed can just be formed with the circuit of certain adhesion.
However, the copper crystal grain of plating copper wire is thicker, etch-rate is slower in common etching solution, in electrochemical corrosion
The molecular energy at boundary edge is higher, in electrochemical corrosion course, can be eroded with faster anodic oxidation corrosion rate,
The projection of crystal grain is formed, formation copper wire surface is more coarse, the need for meeting pressing pre-treatment.
In the utility model, corroded to machined part by anodic oxidation etching tank and roughening treatment, electrochemistry
In corrosion process, i.e., Seed Layer is dissolved quickly through anodic oxidation, plating copper wire surface is also subjected to roughening corrosion shape
Into the rough surface for being suitable for pressing, copper wire and the adhesion of outer layer insulation material are improved.
After anodic oxidation removes the continuous electroless copper in surface or ultra-thin layers of copper, between the sunk area of rough substrate surface
Copper tooth will be no longer continuous, and discontinuous copper tooth can not be removed by anodic oxidation.Accordingly, it would be desirable to erode company in anodic oxidation
After continuous face copper, oxide etch is carried out to the copper tooth of rough surface, fallen copper tooth fast-etching by microetch groove.
Microetch groove 3 loses for not etching the remaining copper tooth on clean workpiece to be added to surface after anodic oxidation etching
Carve.The structure of microetch groove is as shown in figure 5, the microetch cell body 31 including being loaded with microetch liquid medicine, submerges the microetch groove of microetch liquid medicine
Cyclic spray mouthful 33 is provided with the inwall of body 31, for spraying microetch liquid medicine to workpiece to be added.In the utility model, multiple circulations
Jet is arranged on the corresponding inwall of two sides microetch cell body 31 of workpiece to be added, microetch liquid medicine is sprayed to certain pressure to be added
Workpiece, improves corrosion efficiency and uniformity；Microetch liquid medicine is sprayed by cyclic spray mouthful with certain pressure, effectively improves microetch medicine
The copper particle that water is remained in rough substrate surface in pit corrodes, and corrosion product is easy under the impact of microetch decoction
Leave, new microetch decoction carries out continual exchange in copper particle surface, improves corrosion rate and uniformity.
The bottom of microetch cell body 31 is provided with nitrogen bulge pipe 15, and nitrogen is sprayed for the microetch liquid medicine into microetch groove,
To stir microetch liquid medicine.
Drying tank 4 is used to be dried to machined part.Its structure is as shown in fig. 6, including drying cell body 41, to drying tank
The gas of interior injection is high temperature nitrogen, and drying tank uses PP materials or the stainless steel making of metal.Baking above workpiece to be added
The upper spout 43 towards workpiece to be added is provided with the dry inwall of cell body 41, upper nozzle exit area is arranged in a straight line multiple in upside, it is ensured that
The uppermost position of substrate can be blown to.Horizontal spout 44, level spray are provided with the inwall of drying cell body 41 of ring workpiece to be added
Mouth is multiple with matrix arrangement, and spout is downward-sloping without exception, covers whole substrate scope.Upper spout has a spacing with horizontal spout
From, it is ensured that the water on hanger is put on substrate to be blown to by upper spout.
The bottom funnel of cell body 41 is dried, funnel-form drying cell body 41 bottom is provided with delivery port 45.Dry cell body
The through hole that solid matter is distributed with even flow plate 42, even flow plate is provided with 41, is mainly used in the passage that drying is flowed downward with nitrogen
The water come is blown down with substrate surface to flow through from even flow plate, is flowed into delivery port, is discharged through delivery port.Positioned at even flow plate and funnel-form
The exhaust duct 46 for leading to the external world is provided with the side wall of drying cell body 41 of bottom, used nitrogen is arranged by exhaust duct
Go out, entered the uniform flow effect of even flow plate, and nitrogen is uniformly discharged perpendicular to even flow plate as far as possible, make the nitrogen born on substrate
Gas uniformity.In the utility model, the air inlet of exhaust duct 46 is set towards delivery port, i.e., exhaust duct has after entering drying tank
The downward opening of one bending, it is ensured that the water got off on even flow plate will not enter exhaust duct.
During drying tank operation, nitrogen is blown downwards the cleaning solution on substrate top by upper spout, then by horizontal spout,
Cleaning solution is caught up with downwards, all horizontal spouts are downward-sloping, by the cleaning solution of the substrate surface after cleaning it is quick to
Under catch up with, until cleaning solution is stayed to even flow plate by substrate surface, delivery port is left to by the hole on even flow plate, by delivery port
Discharge；The moisture film of substrate surface residual is in the case where the strength of nitrogen is brushed, rapid gasification, so that substrate surface quickly be dried up.
Realize that fast etching processes specifically include following steps using the utility model.
A. workpiece to be added is hung vertically in and cleared soon in washing trough, washed 2-3 times, remove the residual particles of substrate surface.
Specifically water-washing process is：Fast-discharge valve is opened, is eluted 3 seconds to 1 minute, fast-discharge valve spray water filling is closed, it is super to the water surface
2 centimetres of workpiece upper edge to be added is crossed, spray is closed, opens nitrogen bubble 30 seconds；Fast-discharge valve is opened, while opening spray, and is closed
Nitrogen bubble, completion is once washed.In whole cleaning process, workpiece to be added is soaked in pure water, is exactly to be drenched in spray
Wash.
B. the workpiece to be added after washing is hung vertically in anodic oxidation etching tank, and workpiece to be added is submerged electrolyte
In；The metal hanging rack of workpiece to be added is connected with anode using wire, the negative pole of battery is connected with minus plate；Carry out whole
Body anodic oxidation fast erosion falls plating seed layer metal, while electroplating line surface is roughened.
In this step, electrolyte using 2%-10% weight than sulfuric acid, Faradaic current control be 0.1A/cm2-0.6A/dm2,
Until metal seed layer etching is clean.
C. the workpiece to be added after corrosion is hung vertically in and cleared soon in washing trough, washed at least 5 times.Water-washing process such as step
A。
D. the workpiece to be added after washing is hung vertically in microetch groove, and workpiece to be added is submerged in microetch liquid medicine, will
Copper residual particles in the copper tooth not eroded are eroded.
E. the workpiece to be added after microetch is hung vertically in and cleared soon in washing trough, washed at least 5 times.Water-washing process such as step
A。
F. the workpiece to be added after washing is hung vertically in drying tank, heating degree is filled with into drying tank to 60 DEG C of nitrogen
Gas, upper spout and horizontal spout are fully open, dry up 3-5 minutes.
After the utility model, etch process flow is short, and Seed Layer fast-etching and circuit surface are roughened into a step leads to
The completion of the step of anodizing one is crossed, completes to dodge erosion and pressing pre-treatment using only electroplating bath, not only shortens process time, carry
High processing efficiency, and a kind of equipment and a kind of liquid medicine are only used, reduce equipment and material cost.
Claims (8)
1. the additive process Seed Layer fast-etching device of high-density base board half, it is characterised in that：Including for machined part（6）
That is washed clears washing trough soon（1）, for corroded to machined part and roughening treatment anodic oxidation etching tank（2）、
For not etching the microetch groove that clean workpiece to be added is etched to surface（3）And for machined part being dried
Drying tank（4）；The workpiece to be added includes high-density base board（61）, substrate（61）On be attached with metal seed layer（62）, metal
Seed Layer（62）On be provided with graphic plating circuit（63）；The workpiece to be added handled through half addition passes through gold in vertical hanging board mode
Belong to hanger（5）It is suspended on successively according to technological process in above-mentioned each groove and completes fast-etching.
2. the additive process Seed Layer fast-etching device of high-density base board half according to claim 1, it is characterised in that：Institute
State metal hanging rack（5）Including crossbeam and two supports for being vertically set on crossbeam two ends, the workpiece to be added is fixed on metal hanging
On frame, the metal seed layer of workpiece to be added connects with the support of metal hanging rack.
3. the additive process Seed Layer fast-etching device of high-density base board half according to claim 1, it is characterised in that：Institute
State and clear washing trough soon（1）Including rinse bath（11）With the waste water tank being arranged on below rinse bath（12）, rinse bath（11）Bottom and
Waste water tank（12）Pass through fast-discharge valve between water inlet（13）Realize connection with separating；The rinse bath（11）Middle and upper part inwall on
The oriented workpiece to be added being suspended in rinse bath is set to spray the high purity water mouth spray of high purity water（16）.
4. the additive process Seed Layer fast-etching device of high-density base board half according to claim 3, it is characterised in that：Institute
State rinse bath（11）It is provided with for the high purity water gas injection into rinse bath to stir the nitrogen of high purity water on the inwall of bottom
Tympanites is assured（15）, nitrogen bulge pipe（15）Connected with the source nitrogen being arranged on outside rinse bath.
5. the additive process Seed Layer fast-etching device of high-density base board half according to claim 1, it is characterised in that：Institute
State anodic oxidation etching tank（2）Including the etching tank filled with electrolyte（21）, etching tank（21）In be hung with and workpiece to be added
Relative minus plate（23）, etching tank（21）It is provided with outside as workpiece to be added（6）And minus plate（23）The battery of power supply is provided
（24）.
6. the additive process Seed Layer fast-etching device of high-density base board half according to claim 1, it is characterised in that：Institute
State microetch groove（3）Microetch cell body including being loaded with microetch liquid medicine（31）, submerge the microetch cell body of microetch liquid medicine（31）On inwall
The cyclic spray mouthful of oriented part injection microetch liquid medicine to be processed is set（33）；The microetch cell body（31）Bottom be provided with and be used for
Microetch liquid medicine gas injection into microetch groove is to stir the nitrogen bulge pipe of microetch liquid medicine（15）.
7. the additive process Seed Layer fast-etching device of high-density base board half according to claim 1, it is characterised in that：Institute
State drying tank（4）Including drying cell body（41）, the drying cell body above workpiece to be added（41）Direction is provided with inwall to treat
The upper spout of workpiece（43）, the drying cell body of ring workpiece to be added（41）The downward-sloping level of some spouts is provided with inwall
Spout（44）；The drying cell body（41）Bottom funnel, funnel-form drying cell body（41）Bottom is provided with delivery port
（45）.
8. the additive process Seed Layer fast-etching device of high-density base board half according to claim 7, it is characterised in that：Institute
State drying cell body（41）Inside it is provided with even flow plate（42）, positioned at even flow plate and the drying cell body of bottom funnel-shaped portion（41）Set on the wall of side
It is equipped with the exhaust duct for leading to the external world（46）, exhaust duct（46）Air inlet towards delivery port set.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621453638.1U CN206332924U (en) | 2016-12-28 | 2016-12-28 | The additive process Seed Layer fast-etching device of high-density base board half |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621453638.1U CN206332924U (en) | 2016-12-28 | 2016-12-28 | The additive process Seed Layer fast-etching device of high-density base board half |
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| Publication Number | Publication Date |
|---|---|
| CN206332924U true CN206332924U (en) | 2017-07-14 |
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ID=59292611
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201621453638.1U Active CN206332924U (en) | 2016-12-28 | 2016-12-28 | The additive process Seed Layer fast-etching device of high-density base board half |
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| CN (1) | CN206332924U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106488658A (en) * | 2016-12-28 | 2017-03-08 | 华进半导体封装先导技术研发中心有限公司 | High-density base board half additive process Seed Layer fast-etching device and engraving method |
-
2016
- 2016-12-28 CN CN201621453638.1U patent/CN206332924U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106488658A (en) * | 2016-12-28 | 2017-03-08 | 华进半导体封装先导技术研发中心有限公司 | High-density base board half additive process Seed Layer fast-etching device and engraving method |
| CN106488658B (en) * | 2016-12-28 | 2023-05-23 | 华进半导体封装先导技术研发中心有限公司 | Seed layer rapid etching method for high-density substrate semi-addition process |
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