CN106488658A - High-density base board half additive process Seed Layer fast-etching device and engraving method - Google Patents
High-density base board half additive process Seed Layer fast-etching device and engraving method Download PDFInfo
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- CN106488658A CN106488658A CN201611234175.4A CN201611234175A CN106488658A CN 106488658 A CN106488658 A CN 106488658A CN 201611234175 A CN201611234175 A CN 201611234175A CN 106488658 A CN106488658 A CN 106488658A
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
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- Microelectronics & Electronic Packaging (AREA)
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Abstract
The invention discloses a kind of high-density base board half additive process Seed Layer fast-etching device and engraving method, described speed Etaching device include for washed to machined part clear soon washing trough, for corroded to machined part and roughening treatment anodic oxidation etching tank, for surface is not etched with microetch groove and the drying tank for being dried to machined part that clean workpiece to be added is etched；Described workpiece to be added includes high-density base board, and substrate is attached with metal seed layer, and metal seed layer is provided with graphic plating circuit；It is suspended on successively in above-mentioned each groove according to technological process by metal hanging rack in vertical hanging board mode through the workpiece to be added that half addition is processed and complete fast-etching.Seed Layer etching and surface coarsening are once completed by the present invention, shorten technological process and process time, reduce process costs, improve working (machining) efficiency.
Description
Technical field
The present invention relates to PCB substrate encapsulation technology field, particularly a kind of Etaching device of high-density base board Seed Layer and
Engraving method.
Background technology
In printed board manufacturing process, there are addition process, semi-additive process and three kinds of techniques of part addition process.Wherein, traditional
Semi-additive process is to carry out graphic plating using extra thin copper foil or chemical plating copper layer as Seed Layer to form circuit, and circuit plating completes
Afterwards, peel off figure dry film, by fast-etching liquid medicine, the Seed Layer copper below dry film is etched away, more rotten by once surpassing roughening
Erosion is processed, and copper wire is carried out being surface-treated the circuit surface that formation has certain roughness, then carries out outer layer prepreg
Pressing is processed.This process needs to etch twice, and flow process is longer, and technique is complex.
Content of the invention
The technical problem to be solved in the invention is to provide a kind of high-density base board half additive process Seed Layer fast-etching
Device and engraving method, with shortened process, reduce process costs, improve working (machining) efficiency.
For solving above-mentioned technical problem, the technical solution used in the present invention is as follows.
High-density base board half additive process Seed Layer fast-etching device, including fast for washed to machined part
Clear washing trough, for corroded to machined part and roughening treatment anodic oxidation etching tank, dry for not etching to surface
Microetch groove and the drying tank for being dried to machined part that net workpiece to be added is etched；Described workpiece bag to be added
Include high-density base board, substrate is attached with metal seed layer, metal seed layer is provided with graphic plating circuit；At half addition
The workpiece to be added of reason is suspended on successively in above-mentioned each groove according to technological process by metal hanging rack in vertical hanging board mode and completes soon
Speed etching.
Above-specified high density substrate half additive process Seed Layer fast-etching device, described metal hanging rack including crossbeam and
It is vertically set on two supports at crossbeam two ends, described workpiece to be added is fixed on metal hanging rack, the seed metallization of workpiece to be added
Layer is connected with the support of metal hanging rack.
Above-specified high density substrate half additive process Seed Layer fast-etching device, described clear soon washing trough include rinse bath and
It is arranged on the waste water tank below rinse bath, realize connection and divide by fast-discharge valve between rinse bath bottom and waste water tank water inlet
From；The high purity water that the oriented workpiece to be added being suspended in rinse bath sprays high purity water is arranged on the middle and upper part inwall of described rinse bath
Mouth spray.
Above-specified high density substrate half additive process Seed Layer fast-etching device, the inwall of described bottom of rinse bath is arranged
Have for the high purity water gas injection in rinse bath to stir the nitrogen bulge pipe of high purity water, nitrogen bulge pipe be arranged on clear
Source nitrogen connection outside washing trough.
Above-specified high density substrate half additive process Seed Layer fast-etching device, described anodic oxidation etching tank includes filling
There is the etching tank of electrolyte, in etching tank, be hung with the minus plate relative with workpiece to be added, be provided with as to be processed outside etching tank
Part and the battery of minus plate offer power supply.
Above-specified high density substrate half additive process Seed Layer fast-etching device, described microetch groove includes being loaded with microetch medicine
The microetch cell body of water, the microetch cell body inwall of submergence microetch liquid medicine arranges the circulation spray that oriented part to be processed sprays microetch liquid medicine
Loophole；The bottom of described microetch cell body be provided with for the microetch liquid medicine gas injection in microetch groove to stir microetch liquid medicine
Nitrogen bulge pipe.
Above-specified high density substrate half additive process Seed Layer fast-etching device, described drying tank includes drying cell body, position
Upper spout towards workpiece to be added, the drying cell body of ring workpiece to be added are provided with wall in the drying tank body above the workpiece to be added
The downward-sloping horizontal spout of some spouts is provided with inwall；The described bottom funnel drying cell body, funnel-form is dried
Cell body bottom is provided with outlet.
Above-specified high density substrate half additive process Seed Layer fast-etching device, is provided with uniform flow in described drying tank body
Plate, is provided with the exhaust duct leading to the external world, the air intake of exhaust duct on the drying tank body sidewall with bottom funnel-shaped portion for the even flow plate
Mouth is towards outlet setting.
A kind of high-density base board half additive process Seed Layer fast etching processes, specifically include following steps：
A. workpiece to be added is hung vertically in and clears soon in washing trough, wash 2-3 time, remove the residual particles of substrate surface；
B. the workpiece to be added after washing is hung vertically in anodic oxidation etching tank, and so that workpiece to be added is submerged in electrolyte；
Using wire, the metal hanging rack of workpiece to be added is connected with anode, the negative pole of battery is connected with minus plate；Carry out entirety
Anodic oxidation fast erosion falls plating seed layer metal, is roughened electroplating line surface simultaneously；
C. the workpiece to be added after corrosion is hung vertically in and clears soon in washing trough, wash at least 5 times；
D. the workpiece to be added after washing is hung vertically in microetch groove, and so that workpiece to be added is submerged in microetch liquid medicine, will be not rotten
Copper residual particles in the copper tooth of eating away erode；
E. the workpiece to be added after microetch is hung vertically in and clears soon in washing trough, wash at least 5 times；
F. the workpiece to be added after washing is hung vertically in drying tank, is filled with the nitrogen that degree of heating is to 60 DEG C in drying tank,
Upper spout and horizontal spout are fully open, dry up 3-5 minute.
Above-specified high density substrate half additive process Seed Layer fast etching processes, the electrolyte in step B adopts 2%-10%
The sulphuric acid of weight ratio, Faradaic current is 0.1A/cm2-0.6A/dm2.
Due to employing above technical scheme, the invention technological progress is as follows.
The present invention is corroded Seed Layer extra thin copper foil or electroless copper used in half addition technology by primary electrochemical
Layer erodes, and copper wire surface is carried out being roughened the copper wire that corrosion formation has certain roughness, so that follow-up semi-solid preparation
The pressing of piece, Seed Layer etching and surface coarsening is once completed, shortens technological process and process time, reduce technique
Cost, improves working (machining) efficiency.
Brief description
Fig. 1 is the structural representation of fast-etching device of the present invention；
Fig. 2 is the structural representation of metal hanging rack in fast-etching device of the present invention；
Fig. 3 is the structural representation clearing washing trough in fast-etching device of the present invention soon；
Fig. 4 is the structural representation of fast-etching device Anodic Oxidation etching tank of the present invention；
Fig. 5 is the structural representation of microetch groove in fast-etching device of the present invention；
Fig. 6 is the structural representation of drying tank in fast-etching device of the present invention；
Fig. 7 is the structural representation after substrate of the present invention carries out graphic plating；
Fig. 8 electrically connects schematic diagram for substrate of the present invention in anodic oxidation etching tank；
Fig. 9 is the base plate line schematic diagram after the completion of present invention etching.
Wherein：1. clear washing trough soon, 11. rinse baths, 12. waste water tanks, 13. fast-discharge valves, 14. high purity waters, 15. nitrogen bulges
Pipe, 16. high purity water mouth sprays, 17. discharge outlet, 2. anodic oxidation etching tank, 21. etching tanks, 22. electrolyte, 23. minus plates,
24. batteries, 3. microetch groove, 31. microetch cell bodies, 32. microetch liquid medicine, 33. cyclic spray mouths, 4. drying tank, 41. drying cell bodies,
42. even flow plates, spout on 43., 44. horizontal spouts, 45. discharge outlet, 46. exhaust ducts, 5. metal hanging rack, 51. crossbeams, 52.
Frame, 6. workpiece to be added, 61. substrates, 62. metal seed layers, 63. graphic plating circuits.
Specific embodiment
Below in conjunction with the drawings and specific embodiments, the present invention will be described in further detail.
In the present invention, mentioned workpiece to be added 6 refers to be attached with the high-density base board of metal seed layer and figure circuit
61, wherein metal seed layer 62 is attached to substrate 61 upper surface, and graphic plating circuit 63 is arranged on metal seed layer 62.This
Metal seed layer in bright can be chemical plating copper layer, usually about 1um thickness；Can also be extra thin copper foil 1-3um；Seed
The thickness of layer is much smaller than the copper-plated thickness of line electricity, general 10-15 times of difference, and in electrochemical corrosion, Seed Layer passes through electricity
Chemical anode oxidizing process, copper anode oxidation dissolution is corroded eating away, and circuit remains to retain, and forms line layout.
Workpiece 6 to be added sequentially passes through and clears washing trough, anodic oxidation etching tank soon, clears washing trough washing more than 5 times, microetch soon
Groove microetch, rinsing bowl washing more than 5 times, drying tank hot nitrogen are dried and to be completed fast-etching.
Fast-etching device used in the present invention, its structure is as shown in figure 1, include clearing washing trough 1, anodic oxidation corruption soon
Erosion groove 2, microetch groove 3 and drying tank 4, workpiece to be added adopts vertical hanging board mode, by metal hanging rack 5 according to technological process according to
Secondary being suspended in above-mentioned each groove completes fast-etching.
The structure of metal hanging rack 5 is as shown in Fig. 2 include crossbeam 51 and two supports being vertically set on crossbeam two ends
52, workpiece to be added is fixed between two supports 52 of metal hanging rack, and the metal seed layer of workpiece to be added is propped up with metal hanging rack
Frame connects, so that by being energized to realizing the electrical connection to metal seed layer to metal hanging rack in subsequent technique.
Clear washing trough 1 soon for 6 being washed to machined part, there is drip washing and soaking and water washing function.Its structure such as Fig. 3
Shown, including rinse bath 11 be arranged on waste water tank 12 below rinse bath, rinse bath 11 bottom and waste water tank 12 water inlet it
Between by fast-discharge valve 13 realize connection and separate.It is provided with high purity water mouth spray 16 on the middle and upper part inwall of rinse bath 11, be used for
Spray high purity water to the workpiece to be added being suspended in rinse bath, realize rinsing.It is provided with nitrogen on the inwall of rinse bath 11 bottom
Bulge pipe 15, nitrogen bulge pipe 15 is connected with the source nitrogen being arranged on outside rinse bath, and the tube wall of nitrogen bulge pipe 15 is provided with
Multiple pin-and-holes, for the high purity water injection nitrogen in rinse bath, to stir high purity water, improving cleaning performance.Fast-discharge valve 13 is
The large scale valve that can open and close rapidly, can cleaning after the completion of quickly open so that by rinse use up high-purity
Water is discharged rapidly towards waste water tank.Waste water tank 12 bottom is provided with discharge outlet 17, for discharging used waste water, rinses high purity water complete
Portion's single use, does not do circulation flushing.
Anodic oxidation etching tank 2 is used for being corroded to machined part and roughening treatment.Its structure is as shown in figure 4, include
It is filled with the etching tank 21 of electrolyte, in etching tank 21, be hung with the minus plate 23 relative with workpiece to be added, etching tank 21 peripheral hardware
It is equipped with the battery 24 for workpiece 6 to be added and minus plate 23 offer power supply.Electrolyte in etching tank does not have the change for copper
Learn corrosivity, metal hanging rack is connected anode, the minus plate of etching tank connects battery cathode, just can make overall anodic oxidation
Fast erosion falls plating seed layer metal, is roughened electroplating line surface simultaneously.
Nitrogen bulge pipe 15 is also equipped with the inwall of etching tank 21, for spraying nitrogen to the electrolyte in etching tank,
Realize stirring and the jet flow of electrolyte, improve the uniformity of corrosion and the erosion uniformity of the copper granule to Mao Yanei.
Surface is needed to have certain roughness because the layers of copper of substrate surface is combined with substrate, substrate copper wire could be with
Substrate forms good combination, and roughness is typically in Ra=0.2 micron, the scope of Rz=2-4 micron；So there is certain roughness
The layers of copper of surface deposition, the plating seed layer that either electroless copper still presses just can be formed with the circuit of certain adhesion.
However, the copper crystal grain of plating copper wire is thicker, in common etching solution, etch-rate is slower, in electrochemical corrosion
The molecular energy at boundary edge is higher, in electrochemical corrosion course, can be eroded with anodic oxidation corrosion rate faster,
Form the projection of crystal grain, formation copper wire surface is more coarse, meets the needs of pressing pre-treatment.
In the present invention, corroded to machined part and roughening treatment by anodic oxidation etching tank, electrochemical corrosion
During, Seed Layer will dissolve quickly through anodic oxidation, also plating copper wire surface is carried out roughening corrosion formation suitable
Together in the rough surface of pressing, improve the adhesion of copper wire and outer layer insulation material.
After continuous for surface electroless copper or ultra-thin layers of copper are removed by anodic oxidation, between the sunk area of rough substrate surface
Copper tooth will be no longer continuous, and discontinuous copper tooth cannot be removed by anodic oxidation.Accordingly, it would be desirable to erode even in anodic oxidation
After the copper of continuous face, oxide etch is carried out to the copper tooth of rough surface, by microetch groove, copper tooth fast-etching is fallen.
Microetch groove 3 loses for not etching the remaining copper tooth on clean workpiece to be added to surface after anodic oxidation etching
Carve.The structure of microetch groove is as shown in figure 5, include being loaded with the microetch cell body 31 of microetch liquid medicine, the microetch groove of submergence microetch liquid medicine
It is provided with cyclic spray mouth 33, for spraying microetch liquid medicine to workpiece to be added on body 31 inwall.In the present invention, multiple cyclic sprays
Mouth is arranged on workpiece to be added corresponding two sides microetch cell body 31 inwall, microetch liquid medicine is sprayed to be processed with certain pressure
Part, improves corrosion efficiency and uniformity；Microetch liquid medicine is sprayed with certain pressure through cyclic spray mouth, effectively improves microetch liquid medicine
Copper granule rough substrate surface being remained in pit corrodes, corrosion product be easy under the impact of microetch medicinal liquid from
Open, new microetch medicinal liquid carries out continual exchange in copper particle surface, improves corrosion rate and uniformity.
The bottom of microetch cell body 31 is provided with nitrogen bulge pipe 15, for spraying nitrogen to the microetch liquid medicine in microetch groove,
To stir microetch liquid medicine.
Drying tank 4 is used for being dried to machined part.Its structure is as shown in fig. 6, include drying cell body 41, to drying tank
The gas of interior injection is high temperature nitrogen, and drying tank adopts PP material or the stainless steel making of metal.Baking above workpiece to be added
Upper spout 43 towards workpiece to be added is provided with dry cell body 41 inwall, upper nozzle exit area in upside, linear array multiple it is ensured that
The uppermost position of substrate can be blown to.Horizontal spout 44 is provided with drying cell body 41 inwall of ring workpiece to be added, level is sprayed
Mouth has that matrix arrangement is multiple, and spout is downward-sloping without exception, covers whole substrate scope.Upper spout and horizontal spout have a spacing
Enough blown to by upper spout from it is ensured that the water energy on hanger is put on substrate.
Dry the bottom funnel of cell body 41, funnel-form is dried cell body 41 bottom and is provided with outlet 45.Dry cell body
It is provided with even flow plate 42 in 41, the through hole of solid matter is distributed with even flow plate, be mainly used in drying up the passage being flowed downward with nitrogen
Blow down, with substrate surface, the water coming to flow through from even flow plate, be flowed into outlet, discharge through outlet.Positioned at even flow plate and funnel-form
Drying of bottom is provided with, on cell body 41 side wall, the exhaust duct 46 leading to the external world, and used nitrogen is arranged by exhaust duct
Go out, entered the uniform flow effect of even flow plate, and so that nitrogen is uniformly discharged perpendicular to even flow plate as far as possible, the nitrogen bearing is made on substrate
Gas uniformity.In the present invention, the air inlet of exhaust duct 46 is arranged towards outlet, and that is, exhaust duct has one after entering drying tank
Bend downward opening it is ensured that the water getting off on even flow plate will not enter exhaust duct.
During drying tank operation, the cleaning solution on substrate top is blown downwards by nitrogen by upper spout, then passes through horizontal spout,
Cleaning solution is caught up with downwards, all of horizontal spout is all downward-sloping, by cleaning after substrate surface cleaning solution quickly to
Under catch up with, until cleaning solution is stayed to even flow plate by substrate surface, outlet is left to by the hole on even flow plate, through outlet
Discharge；Under the strength of nitrogen is brushed, rapid gasification, thus substrate surface is quickly dried up the moisture film of substrate surface residual.
A kind of high-density base board half additive process Seed Layer fast etching processes, specifically include following steps.
A. workpiece to be added is hung vertically in and clears soon in washing trough, wash 2-3 time, remove the residual particles of substrate surface.
Specifically water-washing process is：Open fast-discharge valve, drip washing 3 seconds to 1 minute, close fast-discharge valve spray water filling, surpass to the water surface
Cross 2 centimetres of workpiece upper edge to be added, close spray, open nitrogen bubble 30 seconds；Fast-discharge valve is opened, and opens spray simultaneously, and closes
Nitrogen bubble, completes once to wash.In whole cleaning process, workpiece to be added is not to soak in pure water it is simply that drenching in spray
Wash.
B. the workpiece to be added after washing is hung vertically in anodic oxidation etching tank, and so that workpiece to be added is submerged electrolyte
In；Using wire, the metal hanging rack of workpiece to be added is connected with anode, the negative pole of battery is connected with minus plate；Carry out whole
Body anodic oxidation fast erosion falls plating seed layer metal, is roughened electroplating line surface simultaneously.
In this step, electrolyte adopts the sulphuric acid of 2%-10% weight ratio, and Faradaic current is controlled to 0.1A/cm2-0.6A/dm2,
Until metal seed layer etching is clean.
C. the workpiece to be added after corrosion is hung vertically in and clears soon in washing trough, wash at least 5 times.Water-washing process such as step
A.
D. the workpiece to be added after washing is hung vertically in microetch groove, and so that workpiece to be added is submerged in microetch liquid medicine, will
Copper residual particles in the copper tooth not eroded erode.
E. the workpiece to be added after microetch is hung vertically in and clears soon in washing trough, wash at least 5 times.Water-washing process such as step
A.
F. the workpiece to be added after washing is hung vertically in drying tank, is filled with the nitrogen that degree of heating is to 60 DEG C in drying tank
Gas, upper spout and horizontal spout are fully open, dry up 3-5 minute.
Present invention process flow process is short, Seed Layer fast-etching and circuit surface is roughened a step and passes through anodizing one
Step completes, and only completes to dodge erosion and pressing pre-treatment using electroplating bath, not only shortens process time, improve working (machining) efficiency, and
And only using a kind of equipment and a kind of liquid medicine, reduce equipment and material cost.
Claims (10)
1. high-density base board half additive process Seed Layer fast-etching device it is characterised in that：Including for machined part（6）
That is washed clears washing trough soon（1）, for corroded to machined part and roughening treatment anodic oxidation etching tank（2）、
For surface is not etched with the microetch groove that clean workpiece to be added is etched（3）And for being dried to machined part
Drying tank（4）；Described workpiece to be added includes high-density base board（61）, substrate（61）On be attached with metal seed layer（62）, metal
Seed Layer（62）On be provided with graphic plating circuit（63）；Through the workpiece to be added that half addition is processed, gold is passed through in vertical hanging board mode
Belong to hanger（5）It is suspended on successively in above-mentioned each groove according to technological process and complete fast-etching.
2. high-density base board half additive process Seed Layer fast-etching device according to claim 1 it is characterised in that：Institute
State metal hanging rack（5）Including including crossbeam and two supports being vertically set on crossbeam two ends, described workpiece to be added is fixed on gold
Belong on hanger, the metal seed layer of workpiece to be added is connected with the support of metal hanging rack.
3. high-density base board half additive process Seed Layer fast-etching device according to claim 1 it is characterised in that：Institute
State and clear washing trough soon（1）Including rinse bath（11）With the waste water tank being arranged on below rinse bath（12）, rinse bath（11）Bottom and
Waste water tank（12）Pass through fast-discharge valve between water inlet（13）Realize connection and separate；Described rinse bath（11）Middle and upper part inwall on
The oriented workpiece to be added being suspended in rinse bath of setting sprays the high purity water mouth spray of high purity water（16）.
4. high-density base board half additive process Seed Layer fast-etching device according to claim 3 it is characterised in that：Institute
State rinse bath（11）It is provided with the inwall of bottom for the nitrogen to stir high purity water to the high purity water gas injection in rinse bath
Tympanites is assured（15）, nitrogen bulge pipe（15）Connect with the source nitrogen being arranged on outside rinse bath.
5. high-density base board half additive process Seed Layer fast-etching device according to claim 1 it is characterised in that：Institute
State anodic oxidation etching tank（2）Including the etching tank being filled with electrolyte（21）, etching tank（21）In be hung with and workpiece to be added
Relative minus plate（23）, etching tank（21）It is provided with outward as workpiece to be added（6）And minus plate（23）The battery of power supply is provided
（24）.
6. high-density base board half additive process Seed Layer fast-etching device according to claim 1 it is characterised in that：Institute
State microetch groove（3）Including the microetch cell body being loaded with microetch liquid medicine（31）, the microetch cell body of submergence microetch liquid medicine（31）On inwall
The cyclic spray mouth that oriented part to be processed sprays microetch liquid medicine is set（17）；Described microetch cell body（31）Bottom be provided with for
To the microetch liquid medicine gas injection in microetch groove to stir the nitrogen bulge pipe of microetch liquid medicine（15）.
7. high-density base board half additive process Seed Layer fast-etching device according to claim 1 it is characterised in that：Institute
State drying tank（4）Including drying cell body（41）, drying cell body above workpiece to be added（41）Direction is provided with inwall treat
The upper spout of workpiece（43）, the drying cell body of ring workpiece to be added（41）The downward-sloping level of some spouts is provided with inwall
Spout（44）；Described drying cell body（41）Bottom funnel, funnel-form dry cell body（41）Bottom is provided with outlet
（45）.
8. high-density base board half additive process Seed Layer fast-etching device according to claim 7 it is characterised in that：Institute
State drying cell body（41）Inside it is provided with even flow plate（42）, positioned at the drying cell body of even flow plate and bottom funnel-shaped portion（41）Set on the wall of side
It is equipped with the exhaust duct leading to the external world（46）, exhaust duct（46）Air inlet towards outlet arrange.
9. a kind of high-density base board half additive process Seed Layer fast etching processes as described in claim 1 to 8, its feature exists
In specifically including following steps：
A. workpiece to be added is hung vertically in and clears soon in washing trough, wash 2-3 time, remove the residual particles of substrate surface；
B. the workpiece to be added after washing is hung vertically in anodic oxidation etching tank, and so that workpiece to be added is submerged in electrolyte；
Using wire, the metal hanging rack of workpiece to be added is connected with anode, the negative pole of battery is connected with minus plate；Carry out entirety
Anodic oxidation fast erosion falls plating seed layer metal, is roughened electroplating line surface simultaneously；
C. the workpiece to be added after corrosion is hung vertically in and clears soon in washing trough, wash at least 5 times；
D. the workpiece to be added after washing is hung vertically in microetch groove, and so that workpiece to be added is submerged in microetch liquid medicine, will be not rotten
Copper residual particles in the copper tooth of eating away erode；
E. the workpiece to be added after microetch is hung vertically in and clears soon in washing trough, wash at least 5 times；
F. the workpiece to be added after washing is hung vertically in drying tank, is filled with the nitrogen that degree of heating is to 60 DEG C in drying tank,
Upper spout and horizontal spout are fully open, dry up 3-5 minute.
10. high-density base board half additive process Seed Layer fast etching processes according to claim 9 it is characterised in that：
Electrolyte in step B adopts the sulphuric acid of 2%-10% weight ratio, and Faradaic current is 0.1A/cm2-0.6A/dm2.
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| CN201611234175.4A CN106488658B (en) | 2016-12-28 | 2016-12-28 | Seed layer rapid etching method for high-density substrate semi-addition process |
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| CN201611234175.4A CN106488658B (en) | 2016-12-28 | 2016-12-28 | Seed layer rapid etching method for high-density substrate semi-addition process |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110972412A (en) * | 2019-12-10 | 2020-04-07 | 荣晖电子(惠州)有限公司 | Novel PCB copper deposition process improvement method |
| WO2024120422A1 (en) * | 2022-12-06 | 2024-06-13 | 武汉新创元半导体有限公司 | Novel packaging substrate having interposer function, and manufacturing method therefor |
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| CN103556211A (en) * | 2013-10-14 | 2014-02-05 | 刘刚 | Printed circuit board copper surface microetching and coarsening method and equipment thereof |
| CN105848421A (en) * | 2016-04-18 | 2016-08-10 | 王靖 | Difference etching solution for semi-additive process preparation fine line |
| CN206332924U (en) * | 2016-12-28 | 2017-07-14 | 华进半导体封装先导技术研发中心有限公司 | The additive process Seed Layer fast-etching device of high-density base board half |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110972412A (en) * | 2019-12-10 | 2020-04-07 | 荣晖电子(惠州)有限公司 | Novel PCB copper deposition process improvement method |
| WO2024120422A1 (en) * | 2022-12-06 | 2024-06-13 | 武汉新创元半导体有限公司 | Novel packaging substrate having interposer function, and manufacturing method therefor |
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