CN106463570B - 太阳能电池及其制备方法 - Google Patents
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Abstract
提供一种太阳能电池,包括基底(11)、掺杂射极层(13)、复合抗反射层(14)、第一电极(15)、第二电极(16)、第三电极(17)及背面电场层(18),该基底(11)具有第一表面(112)及与第一表面相对的第二表面(116),该第一表面(112)为入光面,该掺杂射极层(13)包括多个凸起(114)且位于该第一表面(112),该复合抗反射层(14)有多层膜层(142、144、146)复合而成且位于该掺杂射极层(13)上,该第一电极(15)位于该第一表面(112)侧,该第二电极(16)及第三电极(17)位于该第二表面(116)侧,该第二电极(16)为汇流电极,第三电极(17)为背面电极,该背面电场层(18)位于该第二表面(116)且与该第三电极(17)相电耦合,采用上述结构的太阳能电池具有可以提高电池效率的优点。还提供了一种上述太阳能电池的制备方法。
Description
技术领域
本发明涉及一种电池,尤其是一种太阳能电池及其制备方法。
背景技术
随着光伏组件大规模使用,特别是一些大型光伏电厂运营三四年后,业界对光伏组件的电位诱发衰减(PID,Potential Induced Degradation)效应的关注越来越多。一些国家和地区已逐步开始把抗PID作为组件的关键要求之一。这样的趋势使得越来越多的光伏电站、光伏电池和组件厂、测试单位和材料供应商对PID效应的研究越来越关注。
太阳能电池通常是采用聚乙烯醋酸乙烯酯(EVA)作为封装材料;为减轻PID效应,现有技术中,有更换封装材料,而采用比EVA阻抗更高的其他封裝材料来实现;然而,这样的方法却容易增加太阳能电池的总体成本。
发明内容
鉴于上述状况,有必要提供一种可以提高电池效率且成本较低的太阳能电池及其制备方法。
一种太阳能电池,包括基底、掺杂射极层、复合抗反射层、第一电极、第二电极、第三电极及背面电场层,该基底具有第一表面及与第一表面相对的第二表面,该第一表面为入光面,该掺杂射极层包括多个凸起且位于该第一表面,该复合抗反射层有多层膜层复核而成且位于该掺杂射极层上,该第一电极位于该第一表面侧,该第二电极及第三电极位于该第二表面侧,该第二电极为汇流电极、该第三电极为背面电极,该背面电场层位于该第二表面且与该第三电极相电耦合。
该复合抗反射层的折射率为2.01~2.11。
该复合抗反射层包括第一膜层、第二膜层及第三膜层,该第一膜层与掺杂射极层相接触且为离子扩散阻挡层,该第二膜层及该第三膜层位于该第一膜层上方,且该第二膜层位于该第一膜层与该第三膜层之间。
该第一膜层的厚度分别小于该第二膜层及该第三膜层的厚度。
该第一膜层的厚度为5-50nm,该第二膜层的厚度为50-80nm,该第三膜层的厚度为50-150nm。
该基底为P型掺杂硅晶圆,该掺杂射极层为N+掺杂射极层。
一种上述太阳能电池的制备方法,其包括:在基底的第一表面上形成多个凸起,该基底具有第一表面及与第一表面相对的第二表面;在该基底的第一表面上形成磷玻璃层以覆盖该凸起;使该凸起形成掺杂射极层;移除该磷玻璃层;在该掺杂射极层上形成复合抗反射层;在该基底的第一表面侧形成第一电极,在第二表面侧形成第二电极及第三电极;及形成与该第三电极相电耦合的背面电场层。
该复合抗反射层是通过化学气相沉积的方法来形成,
该复合抗反射层的第一膜层是富硅氮化硅膜,其化学气相沉积过程的参数如下:温度为400-450℃,功率范围为6-8KW,硅烷气体流量600-2000sccm、氨气气体流量7-4slm、氮气气体流量5-10slm,其中硅烷气体流量占整体制程气体总量的12~40%。
该背面电场层是通过烧结的方法来形成。
上述太阳能电池包括复合抗反射层以及背面电场层,使得PID效应可被减缓甚至消除,从而可提升太阳能电池的效率。此外,上述太阳能电池的制备方法制备的太阳能电池,可不需要改变EVA封装材料,也不用增加生产步骤及流程,即可通过达到PID测试的要求,因此还可使成本较低。
附图说明
图1-5,7及8是本发明实施例的太阳能电池制备方法中各阶段的示意图。
图6本发明实施例的太阳能电池的复合抗反射层的放大示意图。
具体实施方式
下面将结合附图及实施例对本发明的太阳能电池的制备方法作进一步的详细说明。
本发明实施例的太阳能电池的制备方法包括以下步骤。
请参见图1,首先是在基底11的第一表面112上形成多个凸起114。详细来说,基底11可为P型掺杂硅晶圆,其具有第一表面112及与第一表面112相对的第二表面116。第一表面112为入光面,第二表面116可为背光面,在形成多个凸起114之前,可先对基底11的第一表面112进行清洁处理。凸起114可为横截面为三角形的柱形凸起。
请参见图2,接着,在基底11的第一表面112上形成磷玻璃层12以覆盖凸起114。
请参见图3,接着,使用扩散方法,使凸起114形成掺杂射极层13。具体来说,扩散方法例如是以炉管制程,使物质扩散进入凸起114内而形成掺杂射极层13,例如形成N+掺杂射极层。
请参见图4,接着,移除磷玻璃层12。具体来说,可以以蚀刻的方法,例如使用湿蚀刻或干蚀刻,进行边缘绝缘并去除磷玻璃层12。
请参见图5,接着,在掺杂射极层13上形成复合抗反射层14。具体来说,复合抗反射层14可通过化学气相沉积的方法来形成,例如等离子增强化学气相沉积法。详细来说,请同时参加图6,复合抗反射层14可包括第一膜层142、第二膜层144及第三膜层146。第一膜层142与掺杂射极层13相接触,为离子扩散阻挡层,其结构较为致密,可以阻挡钠离子扩散至抗反射层14与掺杂射极层13之接口,从而可避免形成钠离子扩散所导致的漏电路径。第二膜层144及第三膜层146位于第一膜层142上方,第二膜层144位于第一膜层142与第三膜层146之间。其中,第一膜层142可为包含有非晶硅(amorphous silicon)、富硅(silicon-rich)氮化硅膜、富硅氧化硅膜、富硅氮氧化硅膜。以富硅氮化硅膜为例,其化学气相沉积过程的参数如下:温度为400-450℃,功率范围为6-8KW,硅烷(SiH4)气体流量600-2000sccm、氨气(NH3)气体流量7-4slm、氮气(N2)气体流量5-10slm,其中SiH4气体流量占整体制程气体总量约12~40%。
为使复合抗反射层14具有较佳的反射率,复合抗反射层14的折射率(n)优选是控制在2.01~2.11范围内。其中,第一膜层142的厚度优选是分别小于第二膜层144及第三膜层146的厚度,第一膜层142的厚度例如为5-50nm,第二膜层144的厚度例如为50-80nm,第三膜层146的厚度例如为50-150nm。此外,第二膜层144与第三膜层146可由含有氮化硅或氮氧化硅来形成。
请参见图7,接着,在基底11的第一表面112侧形成第一电极15,在第二表面116侧形成第二电极16及第三电极17。具体来说,第一电极15、第二电极16及第三电极17可以采用网印的方法来形成。第一电极15可包括汇流电极,该汇流电极可用银浆制备;第二电极16可为汇流电极,其可用银浆制备;第三电极17可为背面电极,其可用铝浆制备。
请参见图8,接着,形成背面电场层18,背面电场层18与第三电极17相电耦合,从而形成太阳能电池100。具体来说,可通过烧结的方法来形成背面电场层18,该背面电场层例如为P+背面电场层;此外,在烧结时,还可使第一电极15与掺杂射极层13形成电耦合。
上述太阳能电池的制备方法制备的太阳能电池,包括复合抗反射层14以及P+背面电场层18,使得PID效应可被减缓甚至消除,从而可提升太阳能电池的效率。此外,上述太阳能电池的制备方法制备的太阳能电池,可不需要改变EVA封装材料,也不用增加生产步骤及流程,即可通过达到PID测试的要求,因此还可使成本较低。
以上所述,仅是本发明的较佳实施例而已,并非对本发明作任何形式上的限制,虽然本发明已以较佳实施例揭露如上,然而并非用以限定本发明,任何熟悉本专业的技术人员,在不脱离本发明技术方案范围内,当可利用上述揭示的技术内容做出些许更动或修饰为等同变化的等效实施例,但凡是未脱离本发明技术方案内容,依据本发明的技术实质对以上实施例所作的任何简单修改、等同变化与修饰,均仍属于本发明技术方案的范围内。
Claims (7)
1.一种太阳能电池,其特征在于:包括基底、掺杂射极层、复合抗反射层、第一电极、第二电极、第三电极及背面电场层,该基底具有第一表面及与第一表面相对的第二表面,该第一表面为入光面,该掺杂射极层包括多个凸起且位于该第一表面,该复合抗反射层有多层膜层复合而成且位于该掺杂射极层上,该第一电极位于该第一表面侧且与该掺杂射极层相电耦合,该第二电极及第三电极位于该第二表面侧,该第一电极和该第二电极为用银浆制备的汇流电极、该第三电极为用铝浆制备的背面电极,该背面电场层位于该第二表面且与该第三电极相电耦合,该背面电场层为P+背面电场层,该复合抗反射层的折射率为2.01~2.11;
其中,该复合抗反射层包括第一膜层、第二膜层及第三膜层,该第一膜层与掺杂射极层相接触且为离子扩散阻挡层,该第二膜层及该第三膜层位于该第一膜层上方,且该第二膜层位于该第一膜层与该第三膜层之间;该第一膜层的厚度分别小于该第二膜层及该第三膜层的厚度;该第二膜层和该第三膜层包括氮氧化硅。
2.如权利要求1所述的太阳能电池,其特征在于:该第一膜层的厚度为5-50nm,该第二膜层的厚度为50-80nm,该第三膜层的厚度为50-150nm。
3.如权利要求1所述的太阳能电池,其特征在于:该基底为P型掺杂硅晶圆,该掺杂射极层为N+掺杂射极层。
4.一种如权利要求1所述的太阳能电池的制备方法,其包括:
在基底的第一表面上形成多个凸起,该基底具有第一表面及与第一表面相对的第二表面;
在该基底的第一表面上形成磷玻璃层以覆盖该凸起;
使该凸起形成掺杂射极层;
移除该磷玻璃层;
在该掺杂射极层上形成复合抗反射层;
在该基底的第一表面侧形成第一电极,在第二表面侧形成第二电极及第三电极;及
形成与该第三电极相电耦合的背面电场层。
5.如权利要求4所述的太阳能电池的制备方法,其特征在于:该复合抗反射层是通过化学气相沉积的方法来形成。
6.如权利要求5所述的太阳能电池的制备方法,其特征在于:该复合抗反射层的第一膜层是富硅氮化硅膜,其化学气相沉积过程的参数如下:温度为400-450℃,功率范围为6-8KW,硅烷气体流量600-2000sccm、氨气气体流量7-4slm、氮气气体流量5-10slm,其中硅烷气体流量占整体制程气体总量的12~40%。
7.如权利要求4所述的太阳能电池的制备方法,其特征在于:该背面电场层是通过烧结的方法来形成。
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CN102738304A (zh) * | 2012-06-25 | 2012-10-17 | 晶澳(扬州)太阳能科技有限公司 | 一种利用局部铝背场结构制备晶体硅太阳能电池背电极的方法 |
CN102891189A (zh) * | 2011-07-22 | 2013-01-23 | 茂迪股份有限公司 | 具有连续背电场层的太阳能电池及其制造方法 |
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CN102891189A (zh) * | 2011-07-22 | 2013-01-23 | 茂迪股份有限公司 | 具有连续背电场层的太阳能电池及其制造方法 |
CN102738304A (zh) * | 2012-06-25 | 2012-10-17 | 晶澳(扬州)太阳能科技有限公司 | 一种利用局部铝背场结构制备晶体硅太阳能电池背电极的方法 |
CN103094366A (zh) * | 2013-01-25 | 2013-05-08 | 中山大学 | 一种太阳电池钝化减反射膜及其制备工艺方法 |
CN103199153A (zh) * | 2013-03-14 | 2013-07-10 | 苏州阿特斯阳光电力科技有限公司 | 一种晶体硅太阳电池的制备方法 |
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