CN106443056A - Wafer level packaging based MEMS wind speed and wind direction sensor structure and packaging method - Google Patents
Wafer level packaging based MEMS wind speed and wind direction sensor structure and packaging method Download PDFInfo
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- CN106443056A CN106443056A CN201610840148.5A CN201610840148A CN106443056A CN 106443056 A CN106443056 A CN 106443056A CN 201610840148 A CN201610840148 A CN 201610840148A CN 106443056 A CN106443056 A CN 106443056A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P5/00—Measuring speed of fluids, e.g. of air stream; Measuring speed of bodies relative to fluids, e.g. of ship, of aircraft
- G01P5/10—Measuring speed of fluids, e.g. of air stream; Measuring speed of bodies relative to fluids, e.g. of ship, of aircraft by measuring thermal variables
- G01P5/12—Measuring speed of fluids, e.g. of air stream; Measuring speed of bodies relative to fluids, e.g. of ship, of aircraft by measuring thermal variables using variation of resistance of a heated conductor
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P13/00—Indicating or recording presence, absence, or direction, of movement
- G01P13/02—Indicating direction only, e.g. by weather vane
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Abstract
The invention discloses a water level packaging based MEMS wind speed and wind direction sensor structure and packaging method. The method comprises the following steps. The front side of a silicon wafer is reversely welded in the wafer level packaging manner onto a ceramic substrate; the back side of the ceramic substrate is used as an interface where the sensors are in contact with the wind. Only through the low temperature bonding between the silicon wafer and the ceramic substrate and among the sensors in different areas, the silicon chip is capable of connecting the central temperature measuring device, the heating device and the heat transmitting and temperature measuring device to a circuit to perform control and detection. In order to achieve better heat contact between the silicon chip and the ceramic substrate, the heating ends of the heating device, the central temperature measuring device and the heat transmitting and temperature measuring device are closely attached to the ceramic substrate. In this way, compared with the structure in the prior art, cost can be reduced; sensitivity is increased; and the response time is shortened. The wafer level packaging based MEMS wind speed and wind direction sensor of the invention is cost-effective and highly sensitive. It also responds quickly and can be manufactured with simple technology.
Description
Technical field
The invention belongs to measure the sensor technical field of wind speed and direction, be specifically related to a kind of based on wafer level packaging
MEMS wind speed wind direction sensor structure and method for packing.
Background technology
Wind speed, wind direction are reflection weather condition very important parameters, to environmental monitoring, communications and transportation and industrial and agricultural production
There is important impact, therefore, quickly measure wind speed and direction and there is important practical significance.But uneven due to wind speed
Property very common, areal is separated by hundreds of meters and arises that bigger wind speed difference, it is therefore desirable to use extensive sensing joint
Point obtains more accurate wind speed and direction.In early days use traditional mechanical vane, the later stage occur in that based on ultrasonic principle with
The wind speed measurement system of doppler principle.But these air velocity transducers are bulky irremovable, power consumption is high, and price height also needs
Wanting periodic maintenance, the appearance of MEMS technology is owing to making miniaturization, and portable wind speed and direction detecting system becomes possibility.
It is known that in the making of MEMS sensor, encapsulation is all the technical bottleneck hindering its development all the time.One
Aspect encapsulating material requires to have good heat transfer, it is also contemplated that in the protected effect to sensor again, and design
This factor.Being all that silicon-sensitive chip back is affixed on pottery front, the back side sense wind of pottery, so heat of heating needs in the past
To pass to another side from the heating surface of silicon to pass to pottery, then again under Wind, the pottery back side produces temperature difference again, then
The heating surface that the temperature difference transfers back to silicon detects, and so can affect sensitivity and the response time of sensor, and owing to being
It is attached to silicon chip on ceramic chip with heat-conducting glue, owing to heat-conducting glue can not be full symmetric in encapsulation process, also can affect sensing
The performance of device.
Present invention wafer level packaging mode key and in ceramic substrate front in the way of flip chip bonding by silicon wafer front, and make pottery
The interface that the reverse side of porcelain substrate contacts as sensor and wind, it is only necessary to silicon wafer and ceramic substrate low-temperature bonding, carries out drawing
In the sensor that piece obtains, can be by silicon through hole by center temperature element on silicon, heating element heater and heat sensing thermometric are first
Part is connected to silicon wafer back by hole conductive, thus is connected with control and testing circuit.In order to by silicon and ceramic base
Plate preferably thermally contacts, heating element heater, and ceramic substrate is close in the hot junction of center temperature element and heat sensing temperature element.So phase
For structure before, cost can be reduced, improve sensitivity and reduce the response time.
Content of the invention
Deficiency the cost reducing sensor, a kind of base of offer overcoming prior art to exist is provided
MEMS wind speed wind direction sensor structure and method for packing in wafer level packaging.
The technical solution used in the present invention is：A kind of MEMS wind speed wind direction sensor structure based on wafer level packaging, bag
Include silicon and ceramic chip；
Described silicon includes silicon wafer and silica insulation, and silica insulation is arranged on silicon wafer, two
Silica heat insulation layer is provided with heating element heater, center temperature element and the heat sensing temperature element for producing heat, in one
Heart temperature element is located at the center of square silicon, four heating element heaters and four heat sensing temperature element Dou Yi center thermometric units
Being uniformly arranged centered on the center of part, the limit being positioned parallel to silicon of heating element heater and heat sensing temperature element, by center
Temperature element is followed successively by heating element heater, heat dam and heat sensing temperature element to the limit of silicon.Four heat sensing temperature elements
It is arranged on the outside of heating element heater, in order to the distribution of temperature sensor field, by the hot temperature difference on relative heat sensing temperature element
React wind speed and direction information.
Described ceramic chip includes ceramic substrate, and described silicon wafer front is with wafer level packaging mode key with in ceramic substrate
Front, the ceramic substrate back side is used for feeling wind face；
Described silicon and ceramic chip connect in the sensor obtaining, and silicon is first by center thermometric by silicon through hole
Part, heating element heater and heat sensing temperature element are electrically connected to sensor back, and are connected with control and testing circuit.
As the competition of MEMS components and parts is more and more fierce, and MEMS components and parts are required more and more higher, in order to enter one
Step reduces volume and the reduction process costs of MEMS chip, and TSV becomes inexorable trend with the MEMS chip of three-dimensional wafer level packaging.
The method for packing of a kind of above-mentioned MEMS wind speed wind direction sensor based on wafer level packaging, comprises the following steps：
The first step:The preparation of silicon
Step 1, preparation is with silicon through hole the silicon wafer electroplating filling, including go out blind at the deep silicon etching in the fixed position of silicon chip
Hole, then cvd silicon oxide insulating barrier, then carry out Seed Layer sputtering, blind hole is filled in plating after stripping of removing photoresist, and is finally thinned to the end
Show and portal, and on silicon wafer, aoxidize layer of silicon dioxide heat insulation layer；
Step 2, at silica insulation upper surface spin coating photoresist, exposure is patterned exposes preparation center thermometric
Element, heating element heater and heat sensing temperature element；
Step 3, sputtering adhesion layer and thermistor, its organization center temperature element, heating element heater and heat sensing thermometric are first
Part；
Step 4, stripping technology, remove photoresist and unnecessary adhesion layer and thermistor；
Step 5, dry etching heat dam；
Step 6, prepares passivation layer protection adhesion layer and thermistor；
Step 7, under salient point, metal is simultaneously graphical over the passivation layer, pad on plating silicon wafer；
Second step：The preparation of ceramic chip
At ceramic substrate spin coating photoresist, graphically exposing bump solder region, sputtering bump metal is simultaneously graphical, plating
Pad on ceramic substrate, completes the preparation of thermally coupled pad.
3rd step：Flip chip bonding wafer level packaging
Utilize face-down bonding technique, realize connecting pad and the lower interconnection being connected pad, with low temperature on connecting salient points
The wafer level key of eutectic and mode realize the heat passage between ceramic substrate and silicon wafer.Key and during temperature be about 310 DEG C,
Meet the temperature range of MEMS airspeedometer.
4th step：Scribing, completes the preparation of MEMS wind speed wind direction sensor.
In inventive sensor, by low temperature key and realize wafer level packaging, key and temperature between ceramic substrate and silicon wafer
Spend 310 DEG C.Use the relatively thin silicon wafer with high heat conductance, can greatly reduce power consumption.And introduce in silicon
Silicon through hole, due to silicon through hole so that electric conductor passes through silicon, it is not necessary to lead frame and lead-in wire key and, thus reduce envelope
The cost of dress.
The ceramic substrate of inventive sensor, on the one hand as the base plate for packaging of protection silicon, on the other hand can be used again
Make the sensing element of impression extraneous wind speed change.Whole sensor only has the back side of ceramic substrate and wind to carry out environment contact, its
His element includes silicon, center temperature element, heating element heater, and heat sensing temperature element all get along well environment contact, thus can
To have stable character.
The present invention by doing solder bump, the wafer level packaging side of low temperature key sum in ceramic substrate front and silicon wafer front
Formula is packaged, and wherein solder feels wind as the heat passage of silicon wafer and ceramic substrate, the ceramic substrate back side, due to heating on silicon
Ceramic substrate is close in the hot junction that element, center temperature element and heat sense temperature element, and heating element heater is built at ceramic base plate surface
The change with the wind of vertical temperature field and change, heat sensing temperature element, owing to being close to ceramic substrate, can experience temperature field
The situation of change of distribution.Extraneous calm under conditions of, the distribution in temperature field presents full symmetric state.When there is wind in the external world
When crossing the ceramic substrate back side, wind will take away the heat of part in the way of thermal convection current from the ceramic substrate back side, and heat sensing thermometric is first
Part will measure the change of temperature, thus reflect the size of wind speed；The difference of symmetrical upstream and downstream heat sensing temperature element
Divide output to reflect the change of the temperature gradient on ceramic substrate, the change information of wind direction can be reflected.
Beneficial effect：1. the packaging technology of the present invention belongs to sensor wafer level packaging, and ceramic substrate encapsulates with silicon wafer
Front size is identical, by flip chip bonding encapsulation realize between silicon wafer and ceramic substrate thermally coupled, only need letter after encapsulation
Single scribing can be obtained by complete sensor.The wind speed and direction that the mode of this wafer level packaging encapsulates with traditional single core piece
Sensor is compared, and on the one hand greatly reduces the packaging cost of MEMS element, improves the packaging efficiency of sensor, on the other hand
Ensure that sensor encapsulates the uniformity of the deviation causing, reduce the cost of sensor back end signal conditioning.
2. all MEMS of the present invention are all done on the silicon die, are placed on potsherd relative to heating element heater before, in
Heart temperature element and heat sensing temperature element are made on silicon chip, owing to ceramic substrate is coarse relative to silicon a lot, on silicon
Structure include that between heating element heater and center temperature element and heat sensing temperature element, difference is just much smaller between resistance.Permissible
Reduce later stage circuit parameter coupling and wind speed and direction calibrates the pressure bringing, and be substantially reduced pick up calibration aspect manpower, thing
The cost of power.
3. present invention employs the MEMS wind speed wind direction sensor of a kind of wafer level packaging with through-silicon via structure, due to
Use silicon through hole as electrical connection, shorten the interconnection line distance between sensor and circuit, relative to metal wire bond before
Structure, reduces the time of follow-up routing, decreases the encapsulation error of wire bonding, is more suitable for volume production, and can be accurate
Control, one-shot forming.Owing to only needing scribing to can be obtained by sensor component after sensor wafer level packaging, the core after scribing
Piece can not waste ceramic chip area, can realize prepared by substantial amounts of sensor on 4 cun of wafers.And after simple scribing
, it relative to the structure not having silicon through hole before, it is not necessary to silicon wafer is carried out sliver, is not required to subsequent treatment, reduce technique
Cost, improves ceramic substrate utilization rate.
4. owing to by heating element heater, the hot junction of center temperature element and heat sensing temperature element is close to ceramic substrate, is compared
It is attached to the silicon back side on ceramic substrate in before, then carries out feeling the method for wind with ceramic substrate another side, can improve even
Connect reliability and heat-conductive characteristic, improve sensitivity and the response time of sensor largely.
5. it is thermally coupled that the present invention uses low temperature key and technology realize between ceramic substrate and silicon, the key being used
Stable with having geometry and material behavior with gold tin salient point, the good feature of consistency of performance, is a kind of ideal sensor
Wafer-Level Packaging Technology, key and process environment temperature are 310 DEG C, compatible with airspeedometer energy bearing temperature.
Brief description
Fig. 1 is silicon preparation process of the present invention；
Fig. 2 is silicon top view of the present invention；
Fig. 3 is silicon side view of the present invention；
Fig. 4 is ceramic chip side view of the present invention；
Fig. 5 is ceramic chip top view of the present invention；
Fig. 6 is the monolithic sensor chip side view after the present invention finally completes scribing.
Detailed description of the invention
The present invention will be further described with detailed description of the invention below in conjunction with the accompanying drawings.
As shown in figures 1 to 6, a kind of MEMS wind speed wind direction sensor structure based on wafer level packaging, including silicon 110
And ceramic chip；
Described silicon 110 includes silicon wafer 20 and silica insulation 10, and silica insulation 10 is arranged on silicon
On disk 20, silica insulation 10 is provided with heating element heater the 26th, the center temperature element 28 for producing heat and heat passes
Sensing temperature element 24, a center temperature element 28 is located at the center of square silicon 110, four heating element heaters 26 and four heat
Being uniformly arranged centered on the center of sensing temperature element 24 Dou Yi center temperature element 28, heating element heater 26 and heat sensing thermometric are first
The limit being positioned parallel to silicon 110 of part 24, is followed successively by heating element heater by center temperature element 28 to the limit of silicon 110
26th, heat dam 70 and heat sensing temperature element 24.Four heat sensing temperature elements 24 are arranged on the outside of heating element heater 26, in order to
The distribution of temperature sensor field, reacts wind speed and direction information by the hot temperature difference on relative heat sensing temperature element 24.
Described ceramic chip includes ceramic substrate 90, and described silicon wafer 20 front is with wafer level packaging mode key with in pottery
Substrate 90 front, ceramic substrate 90 back side is used for feeling wind face；
Described silicon 110 and ceramic chip connect in the sensor 210 obtaining, and silicon 110 is by silicon through hole (the 30th,
32nd, 34) by center temperature element 28, heating element heater 26 and heat sensing temperature element 24 are electrically connected to sensor 210 back, and
It is connected with control and testing circuit.
The method for packing of a kind of MEMS wind speed wind direction sensor based on wafer level packaging, comprises the following steps：
The first step:The preparation of silicon 110
Step 1, prepares with silicon through hole 30 silicon wafer 20 electroplating filling, including at the deep silicon etching in the fixed position of silicon chip
Going out blind hole, then cvd silicon oxide insulating barrier, then carrying out Seed Layer sputtering, blind hole is filled in plating after stripping of removing photoresist, finally thinning
Show on earth and portal, and on silicon wafer, aoxidize layer of silicon dioxide heat insulation layer 10；
Step 2, at silica insulation 10 upper surface spin coating photoresist 40, exposure is patterned exposes preparation center
Temperature element 28, heating element heater 26 and heat sensing temperature element 24；
Step 3, sputtering adhesion layer 50 and thermistor 60, its organization center temperature element 28, heating element heater 26 and heat pass
Sensing temperature element 24；
Step 4, stripping technology, remove photoresist 40 and unnecessary adhesion layer 50 and thermistor 60；
Step 5, dry etching heat dam 70；
Step 6, prepares passivation layer 80 and protects adhesion layer 50 and thermistor 60；
Step 7, under salient point, metal is simultaneously graphical over the passivation layer, pad 100 on plating silicon wafer；
Second step：The preparation of ceramic chip
At ceramic substrate 90 spin coating photoresist, graphically exposing bump solder region, sputtering bump metal is simultaneously graphical, electricity
Pad (the 92nd, 94) on plating ceramic substrate, completes the preparation of thermally coupled pad.
3rd step：Flip chip bonding wafer level packaging
Utilize face-down bonding technique, realize connecting pad and the lower interconnection being connected pad, with low temperature on connecting salient points
The wafer level key of eutectic and mode realize the heat passage between ceramic substrate 90 and silicon wafer 20.Key and during temperature be about
310 DEG C, meet the temperature range of MEMS airspeedometer.
4th step：Scribing, completes the preparation of MEMS wind speed wind direction sensor.
It should be pointed out that, for those skilled in the art, under the premise without departing from the principles of the invention,
Can also make some improvements and modifications, these improvements and modifications also should be regarded as protection scope of the present invention.In the present embodiment not
Clear and definite each part all can use prior art to be realized.
Claims (3)
1. the MEMS wind speed wind direction sensor structure based on wafer level packaging, it is characterised in that：Including silicon and pottery
Chip；
Described silicon includes silicon wafer and silica insulation, and silica insulation is arranged on silicon wafer, titanium dioxide
Silicon heat insulation layer is provided with heating element heater, center temperature element and the heat sensing temperature element for producing heat, and a center is surveyed
Temperature element is located at the center of square silicon, and four heating element heaters and four heat sense temperature element Dou Yi center temperature elements
Being uniformly arranged centered on center, the limit being positioned parallel to silicon of heating element heater and heat sensing temperature element, by center thermometric
Element is followed successively by heating element heater, heat dam and heat sensing temperature element to the limit of silicon；
Described ceramic chip includes ceramic substrate, and described silicon wafer front is with wafer level packaging mode key and in ceramic substrate just
Face, the ceramic substrate back side is used for feeling wind face；
Described silicon and ceramic chip connect in the sensor obtaining, and silicon, is added center temperature element by silicon through hole
Thermal element and heat sensing temperature element are electrically connected to sensor back, and are connected with control and testing circuit.
2., according to claim 1 one kind based on the method for packing of the MEMS wind speed wind direction sensor of wafer level packaging, its feature exists
In：Comprise the following steps：
The first step:The preparation of silicon
Step 1, preparation is with silicon through hole the silicon wafer electroplating filling, including go out blind hole at the deep silicon etching in the fixed position of silicon chip,
Then cvd silicon oxide insulating barrier, then carry out Seed Layer sputtering, blind hole is filled in plating after stripping of removing photoresist, and is finally thinned to bottom surface dew
Portal, and on silicon wafer, aoxidize layer of silicon dioxide heat insulation layer；
Step 2, at silica insulation upper surface spin coating photoresist, exposure is patterned exposes preparation center thermometric unit
Part, heating element heater and heat sensing temperature element；
Step 3, sputtering adhesion layer and thermistor, its organization center temperature element, heating element heater and heat sensing temperature element；
Step 4, stripping technology, remove photoresist and unnecessary adhesion layer and thermistor；
Step 5, dry etching heat dam；
Step 6, prepares passivation layer protection adhesion layer and thermistor；
Step 7, under salient point, metal is simultaneously graphical over the passivation layer, pad on plating silicon wafer；
Second step：The preparation of ceramic chip
At ceramic substrate spin coating photoresist, graphically exposing bump solder region, sputtering bump metal is simultaneously graphical, electro-plated pottery
Pad on substrate, completes the preparation of thermally coupled pad；
3rd step：Flip chip bonding wafer level packaging
Utilize face-down bonding technique, realize connecting pad and the lower interconnection being connected pad, with low temperature eutectic on connecting salient points
Wafer level key and mode realize the heat passage between ceramic substrate and silicon wafer；
4th step：Scribing, completes the preparation of MEMS wind speed wind direction sensor.
3., according to claim 2 one kind based on the method for packing of the MEMS wind speed wind direction sensor of wafer level packaging, its feature exists
In：In described 3rd step, key and during temperature be 310 DEG C, meet the temperature range of MEMS airspeedometer.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610840148.5A CN106443056A (en) | 2016-09-21 | 2016-09-21 | Wafer level packaging based MEMS wind speed and wind direction sensor structure and packaging method |
| PCT/CN2017/088026 WO2018054101A1 (en) | 2016-09-21 | 2017-06-13 | Wafer level package-based mems wind speed and direction sensor structure and packaging method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610840148.5A CN106443056A (en) | 2016-09-21 | 2016-09-21 | Wafer level packaging based MEMS wind speed and wind direction sensor structure and packaging method |
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| CN106443056A true CN106443056A (en) | 2017-02-22 |
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| WO (1) | WO2018054101A1 (en) |
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| WO2018054101A1 (en) * | 2016-09-21 | 2018-03-29 | 东南大学 | Wafer level package-based mems wind speed and direction sensor structure and packaging method |
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| CN108609574A (en) * | 2018-05-31 | 2018-10-02 | 中国科学院微电子研究所 | Enclosed structure, method of making same and device |
| CN109384189A (en) * | 2018-09-14 | 2019-02-26 | 常州大学 | A kind of hot type wind speed wind direction sensor and preparation method thereof based on bonding technology |
| CN109384189B (en) * | 2018-09-14 | 2020-06-12 | 常州大学 | Thermal type wind speed and direction sensor based on bonding process and preparation method thereof |
| CN109545775A (en) * | 2018-11-22 | 2019-03-29 | 中芯集成电路（宁波）有限公司 | A kind of semiconductor structure and forming method thereof |
| CN109545775B (en) * | 2018-11-22 | 2020-08-04 | 中芯集成电路（宁波）有限公司 | Semiconductor structure and forming method thereof |
| CN113092809A (en) * | 2021-04-09 | 2021-07-09 | 东南大学 | Film type wind speed and direction sensor with front wind sensing surface and back lead wire and manufacturing method thereof |
| CN113884701A (en) * | 2021-09-28 | 2022-01-04 | 东南大学 | Wind speed and direction sensor for improving measurement range and full-range precision |
| CN115077648A (en) * | 2022-08-19 | 2022-09-20 | 无锡芯感智半导体有限公司 | MEMS mass flow sensor and preparation method thereof |
| CN116435258A (en) * | 2023-06-13 | 2023-07-14 | 中诚华隆计算机技术有限公司 | Packaging method and packaging structure of chip |
| CN116435258B (en) * | 2023-06-13 | 2023-09-26 | 中诚华隆计算机技术有限公司 | Packaging method and packaging structure of chip |
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