CN109384189A - A kind of hot type wind speed wind direction sensor and preparation method thereof based on bonding technology - Google Patents
A kind of hot type wind speed wind direction sensor and preparation method thereof based on bonding technology Download PDFInfo
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- CN109384189A CN109384189A CN201811072690.6A CN201811072690A CN109384189A CN 109384189 A CN109384189 A CN 109384189A CN 201811072690 A CN201811072690 A CN 201811072690A CN 109384189 A CN109384189 A CN 109384189A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B1/00—Devices without movable or flexible elements, e.g. microcapillary devices
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C3/00—Assembling of devices or systems from individually processed components
- B81C3/001—Bonding of two components
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P13/00—Indicating or recording presence, absence, or direction, of movement
- G01P13/02—Indicating direction only, e.g. by weather vane
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P5/00—Measuring speed of fluids, e.g. of air stream; Measuring speed of bodies relative to fluids, e.g. of ship, of aircraft
- G01P5/10—Measuring speed of fluids, e.g. of air stream; Measuring speed of bodies relative to fluids, e.g. of ship, of aircraft by measuring thermal variables
- G01P5/12—Measuring speed of fluids, e.g. of air stream; Measuring speed of bodies relative to fluids, e.g. of ship, of aircraft by measuring thermal variables using variation of resistance of a heated conductor
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0292—Sensors not provided for in B81B2201/0207 - B81B2201/0285
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2203/00—Basic microelectromechanical structures
- B81B2203/03—Static structures
- B81B2203/0361—Tips, pillars
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- Microelectronics & Electronic Packaging (AREA)
- Aviation & Aerospace Engineering (AREA)
- Computer Hardware Design (AREA)
- Measuring Volume Flow (AREA)
- Investigating Or Analyzing Materials Using Thermal Means (AREA)
Abstract
The present invention relates to a kind of hot type wind speed wind direction sensor and preparation method thereof based on bonding technology, with sensor chip, the sensor chip includes silica insulation, silicon column is distributed with inside silica insulation, the silica insulation back side corresponds to the silicon column position and is equipped with center temperature element respectively, heating element and upstream and downstream temperature element, wherein center temperature element is located at silica insulation center, heating element is distributed to form centrosymmetric structure by center surrounding of center temperature element, upstream and downstream temperature element is distributed to form centrosymmetric structure by center surrounding of center temperature element, and upstream and downstream temperature element is located at the periphery of heating element.The present invention forms silicon column structure using bonding technology in silica insulation, the lateral transport losses of heat can effectively be completely cut off, biosensor power consumption is reduced, in variation of ambient temperature, the changes in material properties of chip reduces, to effectively inhibit the temperature drift of sensor outputs.
Description
Technical field
The present invention relates to a kind of hot type wind speed wind direction sensor and preparation method thereof based on bonding technology.
Background technique
Wind speed wind direction sensor is widely used in engineering machinery, weather warning, wisdom agricultural, field of wind power generation.
Hot type wind speed wind direction sensor have many advantages, such as the response time it is fast, can mass manufacture, size it is small, be widely used in daily production
In life.But due to being detected using calorifics principle, each material parameter is significant with variation of ambient temperature in sensor, sensing
The temperature drift characteristic of device is obvious, seriously affects the measurement accuracy of sensor.
Summary of the invention
The technical problem to be solved by the present invention is the present invention, which provides one kind, to be had in order to overcome the deficiencies in the existing technology
Effect inhibits temperature drift, the hot type wind speed wind direction sensor based on bonding technology for improving measurement accuracy and preparation method thereof.
The technical solution adopted by the present invention to solve the technical problems is: a kind of hot type wind speed and direction based on bonding technology
Sensor has sensor chip, and the sensor chip includes silica insulation, silica insulation inner part
Be furnished with silicon column, the silica insulation back side correspond to the silicon column position be equipped with respectively center temperature element, heating element and on
Downstream temperature element, wherein center temperature element is located at silica insulation center, and heating element is with center thermometric member
Part is that center surrounding is distributed to form centrosymmetric structure, and upstream and downstream temperature element is distributed shape by center surrounding of center temperature element
Structure in a center of symmetry, and upstream and downstream temperature element is located at the periphery of heating element.
The silica insulation front, which has, is covered in the thin layer of silicon dioxide of silicon column upper surface, so neither shadow
The distribution of sensor chip surface heat is rung, and encapsulating certainly for sensor chip may be implemented.
The described silica insulation surrounding arrangement be equipped with respectively connection center temperature element, heating element and
The pad of upstream and downstream temperature element.
In above-mentioned hot type wind speed wind direction sensor chip, the heating element of four central symmetries distribution is for heating wind speed and wind
To sensor chip, wind speed wind direction sensor chip temperature is made to be higher than environment temperature.Center temperature element is for measuring wind speed and wind
To the central temperature of sensor chip.Four are located at the upstream and downstream temperature element of silica insulation edge distribution for measuring
The wind speed wind direction sensor chip upstream and downstream temperature difference due to caused by wind speed.Under windless condition, four heating element heats are formed
Thermal field, symmetrical on silica insulation surface, upstream and downstream temperature element resistance is equal；Have under wind state, it is right
Claiming the thermal field of distribution can be broken, and silica insulation upstream temperature is lower than downstream temperature, and upstream and downstream temperature element has resistance
Value difference is different, handles temperature detecting resistance output signal, available wind speed and direction information corresponding with external environment.
In above-mentioned hot type wind speed wind direction sensor chip, due to the thermal conductivity of silica two amounts lower than the thermal conductivity of silicon
Grade or more, therefore the heat almost all that heating element generates reaches silica insulation surface by silicon column, avoids heat
Lateral transport loss, reduce biosensor power consumption.
In above-mentioned hot type wind speed wind direction sensor, formed by the heat that heating element generates on silica insulation surface
Temperature Distribution, the temperature of silica insulation marginal position carry out heat transfer by silicon column, by four upstream and downstream thermometric members
Part obtains corresponding temperature information.
In above-mentioned hot type wind speed wind direction sensor, the silica insulation overwhelming majority is silica, and silica
Thermal conductivity be far below the rate of temperature change of silicon thermal conductivity with variation of ambient temperature rate, therefore the sensor structure have it is better
Temperature drift inhibition.
A kind of preparation method of above-mentioned hot type wind speed wind direction sensor has following steps:
A, silicon wafer is cleaned, in silicon wafer surface spin coating photoresist layer, and exposes and is patterned, exposes what needs etched
Silicon substrate；
B, the bulk silicon portion of silicon wafer is etched away, silicon column is formed；
C, using bonding technology, silica insulation is bonded with the silicon wafer with silicon column；
D, using corrosion and the two-sided structure being thinned after above-mentioned be bonded of grinding method, wherein silicon wafer is thinned under silicon column
Silica insulation is exposed in end face, and silica insulation is thinned to silicon column upper surface and retains one layer of thin silica；
E, using sputtering technology, silicon column position is corresponded at the silica insulation back side, prepares center thermometric respectively
Element, heating element and upstream and downstream temperature element.
To ensure bonding effect, the bonding technology in step c carries out under vacuum conditions, and silica insulation is in gravity
In the gap for acting on lower inflow silicon wafer surface, after bonding, into carrying out reflow treatment in smelting furnace.
Preferably, in step d, when silica insulation is thinned the silica that is retained of silicon column upper surface with a thickness of
10 microns.
Preferably, in step e, metal used by sputtering technology is platinum.
The beneficial effects of the present invention are: the present invention forms silicon column structure using bonding technology in silica insulation,
The longitudinal heat transfer for realizing chip upper and lower surface, avoids lateral thermal losses, significantly reduces biosensor power consumption；Traditional
Hot type wind speed wind direction sensor generally uses ceramic substrate or silicon substrate, and the thermal conductivity of both substrate materials is with environment temperature
Change rate is higher, and the thermal conductivity for the silicon dioxide liner bottom material that silica insulation uses in the present invention becomes with environment temperature
Rate is low, and variation of ambient temperature can be effectively reduced and export result to the change bring of sensor chip materials thermophysics parameter
Temperature drift, improve the environmental adaptability of sensor, reduce temperature drift.
Detailed description of the invention
Present invention will be further explained below with reference to the attached drawings and examples.
Fig. 1 is structural schematic diagram of the invention.
Fig. 2 is the preparation flow figure of sensor chip of the present invention.
In figure: in 1. silicon wafer, 2. photoresist layer, 3. silicon column, 4. silica insulation, 6. thin layer of silicon dioxide 7.
8. heating element of heart temperature element, 9. upstream and downstream temperature element, 10. pad
Specific embodiment
In conjunction with the accompanying drawings, the present invention is further explained in detail.These attached drawings are simplified schematic diagram, only with
Illustration illustrates basic structure of the invention, therefore it only shows the composition relevant to the invention.
A kind of hot type wind speed wind direction sensor based on bonding technology as shown in Figure 1 has sensor chip, described
Sensor chip includes silica insulation 4, and 4 back side of silica insulation is provided with a center temperature element 7, four
Heating element 8 and four upstream and downstream temperature elements 9, wherein center temperature element 7 is located at 4 center of silica insulation,
Four heating elements 8 are circumferentially evenly arranged on the outside surrounding of center temperature element 7 centered on the center of silica insulation 4,
Four upstream and downstream temperature elements 9 are circumferentially evenly arranged on the outside of four heating elements 8 centered on the center of silica insulation 4
Surrounding, and four upstream and downstream temperature elements 9 are arranged as close as possible to 4 edge of silica insulation.
Nine silicon columns 3 are distributed with inside silica insulation 4, nine silicon columns 3 respectively correspond the center and survey
7, four heating elements 8 of warm element and four 9 location arrangements of upstream and downstream temperature element, 4 front of silica insulation, which has, to be covered
It is placed on the thin layer of silicon dioxide 6 of 3 upper surface of silicon column；6 thickness of thin layer of silicon dioxide is located at titanium dioxide far below 3 height of silicon column
The arrangement of 4 surrounding of silicon heat insulation layer is equipped with difference connection center temperature element 7, heating element 8 and upstream and downstream temperature element 9
Pad 10.
As shown in Fig. 2, a kind of preparation method of above-mentioned hot type wind speed wind direction sensor, has following steps:
A, silicon wafer 1 is cleaned, in 1 surface spin coating photoresist layer 2 of silicon wafer, and exposes and is patterned, exposing needs to carve
The silicon substrate of erosion；
B, the bulk silicon portion of silicon wafer 1 is etched away, silicon column 3 is formed；
C, using bonding technology, silica insulation 4 and the silicon wafer 1 with silicon column 3 are carried out under vacuum conditions
Bonding flows into silica insulation 4 in the gap on 1 surface of silicon wafer by gravity when bonding, after bonding, into
Reflow treatment is carried out in smelting furnace；
D, using corrosion and the two-sided structure being thinned after above-mentioned be bonded of grinding method, wherein silicon wafer 1 is thinned to silicon column 3
Silica insulation 4 is exposed in lower end surface, and it is 10 micro- that silica insulation 4, which is thinned to 3 upper surface of silicon column to retain a layer thickness,
The thin layer of silicon dioxide 6 of rice；
E, sputtering technology processing is carried out using metal platinum, corresponds to 3 position of silicon column at 4 back side of silica insulation,
Center temperature element 7, heating element 8 and upstream and downstream temperature element 9 are prepared respectively, and in 4 surrounding system of silica insulation
The standby pad 10 that center temperature element 7, heating element 8 and upstream and downstream temperature element 9 are connected by lead.
Traditional wind speed wind direction sensor generally has thicker silicon substrate, the heat overwhelming majority that heating element 8 generates
It is dissipated in thermo-conducting manner from silicon substrate, only a small amount of heat and air carry out thermal convection heat exchange.The present invention utilizes bonding
Technique, forms the silicon column 3 with high heat conductance in silica insulation 4, and the heat that such heating element 8 generates is almost complete
Portion reaches 4 surface of silica insulation by silicon column 3, avoids the lateral transport loss of heat, reduces biosensor power consumption.
In the present invention, it is distributed by the heat that heating element 8 generates in chip surface formation temperature, the temperature of chip edge position
Degree carries out heat transfer by silicon column 3, obtains corresponding temperature information by four upstream and downstream temperature elements 9.Since sensor serves as a contrast
Bottom is silica insulation 4, and the overwhelming majority is silica, and the thermal conductivity of silica is far low with variation of ambient temperature rate
In the rate of temperature change of silicon thermal conductivity, therefore the sensor structure has better temperature drift inhibition.
Taking the above-mentioned ideal embodiment according to the present invention as inspiration, through the above description, relevant staff is complete
Various changes and amendments can be carried out without departing from the scope of the technological thought of the present invention' entirely.The technology of this invention
Property range is not limited to the contents of the specification, it is necessary to which the technical scope thereof is determined according to the scope of the claim.
Claims (7)
1. a kind of hot type wind speed wind direction sensor based on bonding technology has sensor chip, it is characterized in that: the sensing
Device chip includes silica insulation, and silicon column is distributed with inside silica insulation, and the silica insulation back side is corresponding
The silicon column position is equipped with center temperature element, heating element and upstream and downstream temperature element respectively, wherein center temperature element position
In silica insulation center, heating element is distributed to form central symmetry knot using center temperature element as center surrounding
Structure, upstream and downstream temperature element are distributed to form centrosymmetric structure using center temperature element as center surrounding, and upstream and downstream thermometric member
Part is located at the periphery of heating element.
2. the hot type wind speed wind direction sensor based on bonding technology as described in claim 1, it is characterized in that: the titanium dioxide
Silicon heat insulation layer front has the thin layer of silicon dioxide for being covered in silicon column upper surface.
3. the hot type wind speed wind direction sensor based on bonding technology as described in claim 1, it is characterized in that: the titanium dioxide
The arrangement of silicon heat insulation layer surrounding is equipped with the weldering of connection center temperature element, heating element and upstream and downstream temperature element respectively
Disk.
4. the preparation method of hot type wind speed wind direction sensor described in a kind of claim 1, it is characterized in that: having following steps:
A, silicon wafer is cleaned, in silicon wafer surface spin coating photoresist layer, and exposes and is patterned, exposes the silicon lining for needing to etch
Bottom；
B, the bulk silicon portion of silicon wafer is etched away, silicon column is formed；
C, using bonding technology, silica insulation is bonded with the silicon wafer with silicon column；
D, using corrosion and the two-sided structure being thinned after above-mentioned be bonded of grinding method, wherein silicon wafer is thinned to the lower end surface of silicon column
Expose silica insulation, silica insulation is thinned to silicon column upper surface and retains one layer of thin silica；
E, using sputtering technology, correspond to silicon column position at the silica insulation back side, prepare respectively center temperature element,
Heating element and upstream and downstream temperature element.
5. the preparation method of hot type wind speed wind direction sensor according to claim 4, it is characterized in that: the bonding work in step c
Skill carries out under vacuum conditions, and silica insulation flows under the influence of gravity into the gap on silicon wafer surface, and bonding terminates
Afterwards, into carrying out reflow treatment in smelting furnace.
6. the preparation method of hot type wind speed wind direction sensor according to claim 4, it is characterized in that: dioxy is thinned in step d
The silica that silicon column upper surface is retained when SiClx heat insulation layer with a thickness of 10 microns.
7. the preparation method of hot type wind speed wind direction sensor according to claim 4, it is characterized in that: in step e, sputtering technology
Used metal is platinum.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811072690.6A CN109384189B (en) | 2018-09-14 | 2018-09-14 | Thermal type wind speed and direction sensor based on bonding process and preparation method thereof |
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| CN201811072690.6A CN109384189B (en) | 2018-09-14 | 2018-09-14 | Thermal type wind speed and direction sensor based on bonding process and preparation method thereof |
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| CN109384189A true CN109384189A (en) | 2019-02-26 |
| CN109384189B CN109384189B (en) | 2020-06-12 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113092809A (en) * | 2021-04-09 | 2021-07-09 | 东南大学 | Film type wind speed and direction sensor with front wind sensing surface and back lead wire and manufacturing method thereof |
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|---|---|---|---|---|
| JPH05157758A (en) * | 1991-12-04 | 1993-06-25 | Yamatake Honeywell Co Ltd | Compensating method for temperature characteristic of current speed sensor |
| CN104061967A (en) * | 2014-07-09 | 2014-09-24 | 东南大学 | Heat type wind speed and direction sensor based on substrate transfer process and packaging method thereof |
| CN104090121A (en) * | 2014-07-09 | 2014-10-08 | 东南大学 | Three-dimensional integrated front-face wind-feeling heat type wind speed and direction sensor device and packaging method |
| CN104730283A (en) * | 2015-03-12 | 2015-06-24 | 东南大学 | Three-dimensional wind velocity and direction sensor based on MEMS technology and manufacturing method thereof |
| CN106443056A (en) * | 2016-09-21 | 2017-02-22 | 东南大学 | Wafer level packaging based MEMS wind speed and wind direction sensor structure and packaging method |
-
2018
- 2018-09-14 CN CN201811072690.6A patent/CN109384189B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05157758A (en) * | 1991-12-04 | 1993-06-25 | Yamatake Honeywell Co Ltd | Compensating method for temperature characteristic of current speed sensor |
| CN104061967A (en) * | 2014-07-09 | 2014-09-24 | 东南大学 | Heat type wind speed and direction sensor based on substrate transfer process and packaging method thereof |
| CN104090121A (en) * | 2014-07-09 | 2014-10-08 | 东南大学 | Three-dimensional integrated front-face wind-feeling heat type wind speed and direction sensor device and packaging method |
| CN104730283A (en) * | 2015-03-12 | 2015-06-24 | 东南大学 | Three-dimensional wind velocity and direction sensor based on MEMS technology and manufacturing method thereof |
| CN106443056A (en) * | 2016-09-21 | 2017-02-22 | 东南大学 | Wafer level packaging based MEMS wind speed and wind direction sensor structure and packaging method |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113092809A (en) * | 2021-04-09 | 2021-07-09 | 东南大学 | Film type wind speed and direction sensor with front wind sensing surface and back lead wire and manufacturing method thereof |
| CN113092809B (en) * | 2021-04-09 | 2022-07-22 | 东南大学 | Film type wind speed and direction sensor with front wind sensing surface and back lead wire and manufacturing method thereof |
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| CN109384189B (en) | 2020-06-12 |
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