CN106395740B - 一种贵金属纳米粒子间距可控的sers衬底制备方法 - Google Patents

一种贵金属纳米粒子间距可控的sers衬底制备方法 Download PDF

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CN106395740B
CN106395740B CN201610929950.1A CN201610929950A CN106395740B CN 106395740 B CN106395740 B CN 106395740B CN 201610929950 A CN201610929950 A CN 201610929950A CN 106395740 B CN106395740 B CN 106395740B
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梁培
吴燕雄
黄杰
舒海波
徐碧洁
白阳
曹艳亭
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Abstract

本发明公开一种贵金属纳米粒子间距可控的SERS衬底制备方法,主要步骤为:用稀释的盐酸清洗AAO模板,而后通过物理方法或者化学方法获得贵金属纳米粒子团簇,并填满整个AAO模板的孔。进一步将贵金属纳米粒子填满孔的AAO模板倒置于一块PMMA上,并进行热处理,使贵金属纳米粒子团簇侵入PMMA中。最后通过稀释的盐酸洗涤,去除AAO模板后,放入真空干燥箱干燥,得到贵金属纳米粒子规则排布的SERS衬底。该方法操作简单方便,SERS衬底上贵金属纳米粒子排布均匀规则,有利于进行拉曼光谱分析。

Description

一种贵金属纳米粒子间距可控的SERS衬底制备方法
技术领域
本发明涉及一种SERS衬底制备方法,尤其涉及到一种基于金属纳米粒子表面拉曼增强效应的SERS衬底制备方法,属于光谱分析检测技术领域。
背景技术
表面拉曼光谱(SERS)由于超高灵敏度,且能获得物质分子结构信息,被称为物质的“指纹谱”,被广泛应用于食品、医药、生命、农业等领域。经过40年的理论和实验研究表明,SERS效应起源于衬底金属表面局域电场增强和金属基底与吸附分子之间相互作用的化学增强,因此高活性的衬底是SERS效应提高的关键。
在SERS高活性衬底制备中,尤其以制备规则有序的阵列型结构为代表手段,如专利号为:201310628084.9,专利名称为:一种由Ag纳米颗粒组装的纳米环阵列SERS衬底的制备方法的发明专利,采用阳极氧化法制备二氧化钛纳米管阵列,然后采用一定浓度氢氧化钾和盐酸溶液浸泡,每个纳米管中获得一个较矮的二氧化钛纳米棒,同时纳米管之间形成小平面;最后再离子溅射Ag,获得单层或多层Ag纳米颗粒组装的纳米环阵列。该发明的Ag纳米颗粒组装的纳米环阵列SERS衬底活性高,信号重复性好,但需要首先制作二氧化钛纳米管阵列,同时需要采用离子溅射,且需要控制溅射时间,制备工艺要求高。相关的研究还报道了采用平板印刷技术、纳米颗粒的有序自组装体等技术实现规则有序的阵列型结构SERS衬底,但这些方法制备步骤繁琐,成本高。
发明内容
为了解决上述现有技术的不足,本发明提供了一种贵金属纳米粒子间距可控的SERS衬底制备方法,该方法采用AAO模板结构优势,能获得纳米粒子分布均匀、间距可控的SERS衬底,操作简单方便。
本发明采用的技术方案为:一种贵金属纳米粒子间距可控的SERS衬底制备方法,主要步骤为:
第一步:用稀释的盐酸清洗AAO模板;
第二步:基于第一步所清洗获得的AAO模板,通过物理方法或化学方法获得贵金属纳米粒子团簇,使其填满整个AAO模板的孔;
第三步:放置一块PMMA,将第二步所获得的AAO模板倒置放于PMMA上,贵金属纳米粒子团簇向下落于PMMA表面,而后放入热环境或者直接对PMMA加热,使PMMA变软,贵金属纳米粒子团簇浸入PMMA中;
第四步:将第三步形成的整体放入稀释的盐酸洗涤,去除AAO模板后,放入真空干燥箱干燥,得到贵金属纳米粒子规则排布的SERS衬底。
所述的贵金属为金或银或铜。
所述的贵金属纳米粒子可以通过控制生长时间来调节纳米颗粒的尺寸。
所述的物理方法为原子蒸镀,磁控溅射或者脉冲激光沉积。
所述的化学方法为金属离子的自组装生长或利用电化学沉积。
所述的AAO模板为单通AAO模板。
所述的PMMA厚度小于1mm。
所述的稀释的盐酸浓度小于5%。
本发明的有益效果为:
1.采用AAO模板孔对金属纳米粒子的限制,实现金属纳米粒子的间距可控制备。
2.采用AAO模板孔的限制和时间控制,可以调节纳米颗粒的尺寸。
3.贵金属纳米粒子间距可控的SERS衬底制备所采用的AAO模板、PMMA等材料成本低,制备过程简单方便。
附图说明
下面结合附图及具体实施方式对本发明作进一步说明。
图1为AAO模板俯视图;
图2为填充了贵金属纳米粒子的AAO模板俯视图;
图3为填充了贵金属纳米粒子的AAO模板倒置于PMMA上的结构图;
图4为贵金属纳米粒子等间距排布的SERS衬底图。
图中,1为AAO模板,2为贵金属纳米粒子,3为PMMA。
具体实施方式
图1中,一种贵金属纳米粒子间距可控的SERS衬底制备方法,第一步,采用稀释的盐酸和去离子水清洗单通AAO模板1,去除表面杂质,盐酸浓度不超过5%。
图2中,一种贵金属纳米粒子间距可控的SERS衬底制备方法,第二步,将图1中采用稀释的盐酸和去离子水清洗干净的单通AAO模板1,通过原子蒸镀,磁控溅射或者脉冲激光沉积Au或Ag或Cu贵金属纳米粒子2团簇或者通过贵金属离子Au+或Ag+或Cu2+的自组装生长或利用电化学沉积的方法获得Au或Ag或Cu贵金属纳米粒子2团簇,使其填满整个AAO模板1的孔。
图3中,一种贵金属纳米粒子间距可控的SERS衬底制备方法,第三步,放置一块厚度小于1mm的PMMA3,将图2中第二步所获得的AAO模板1倒置放于PMMA3上,Au或Ag或Cu贵金属纳米粒子2团簇向下落于PMMA3表面,而后放入热环境或者直接对PMMA3加热,使PMMA3变软,Au或Ag或Cu贵金属纳米粒子2团簇浸入PMMA3中。
图4中,一种贵金属纳米粒子间距可控的SERS衬底制备方法,第四步:将图3中第三步形成的整体放入盐酸浓度不超过5%的稀释的盐酸洗涤,去除AAO模板1后,放入真空干燥箱干燥,得到Au或Ag或Cu贵金属纳米粒子2规则排布的SERS衬底。
实施例1一种AuNPs间距可控的SERS衬底制备方法
第一步,采用稀释的盐酸和去离子水清洗单通AAO模板1,去除表面杂质,盐酸浓度不超过5%。
第二步,将采用稀释的盐酸和去离子水清洗干净的单通AAO模板1,通过原子蒸镀,磁控溅射或者脉冲激光沉积AuNPs2团簇或者通过贵金属离子Au+的自组装生长或利用电化学沉积的方法获得AuNPs2团簇,使其填满整个AAO模板1的孔。
第三步,放置一块厚度小于1mm的PMMA3,将第二步所获得的AAO模板1倒置放于PMMA3上,AuNPs2团簇向下落于PMMA3表面,而后放入热环境或者直接对PMMA3加热,使PMMA3变软,AuNPs2团簇浸入PMMA3中。
第四步:将第三步形成的整体放入盐酸浓度不超过5%的稀释的盐酸洗涤,去除AAO模板1后,放入真空干燥箱干燥,得到AuNPs2规则排布的SERS衬底。
实施例2一种AgNPs间距可控的SERS衬底制备方法
第一步,采用稀释的盐酸和去离子水清洗单通AAO模板1,去除表面杂质,盐酸浓度不超过5%。
第二步,将采用稀释的盐酸和去离子水清洗干净的单通AAO模板1,通过原子蒸镀,磁控溅射或者脉冲激光沉积AgNPs2团簇或者通过贵金属离子Ag+的自组装生长或利用电化学沉积的方法获得AgNPs2团簇,使其填满整个AAO模板1的孔。
第三步,放置一块厚度小于1mm的PMMA3,将第二步所获得的AAO模板1倒置放于PMMA3上,AgNPs2团簇向下落于PMMA3表面,而后放入热环境或者直接对PMMA3加热,使PMMA3变软,AgNPs2团簇浸入PMMA3中。
第四步:将第三步形成的整体放入盐酸浓度不超过5%的稀释的盐酸洗涤,去除AAO模板1后,放入真空干燥箱干燥,得到AgNPs2规则排布的SERS衬底。
实施例3一种CuNPs间距可控的SERS衬底制备方法
第一步,采用稀释的盐酸和去离子水清洗单通AAO模板1,去除表面杂质,盐酸浓度不超过5%。
第二步,将采用稀释的盐酸和去离子水清洗干净的单通AAO模板1,通过原子蒸镀,磁控溅射或者脉冲激光沉积CuNPs2团簇或者通过贵金属离子Cu2+的自组装生长或利用电化学沉积的方法获得CuNPs2团簇,使其填满整个AAO模板1的孔。
第三步,放置一块厚度小于1mm的PMMA3,将第二步所获得的AAO模板1倒置放于PMMA3上,CuNPs2团簇向下落于PMMA3表面,而后放入热环境或者直接对PMMA3加热,使PMMA3变软,CuNPs2团簇浸入PMMA3中。
第四步:将第三步形成的整体放入盐酸浓度不超过5%的稀释的盐酸洗涤,去除AAO模板1后,放入真空干燥箱干燥,得到CuNPs2规则排布的SERS衬底。

Claims (4)

1.一种贵金属纳米粒子间距可控的SERS衬底制备方法,主要步骤为:
第一步:用稀释的盐酸清洗单通AAO模板;其特征在于,
第二步:基于第一步所清洗获得的单通AAO模板,通过金属离子的自组装生长获得贵金属纳米粒子团簇,通过控制生长时间来调节纳米颗粒的尺寸,使贵金属纳米粒子团簇填满整个单通AAO模板的孔;
第三步:放置一块PMMA,将第二步所获得的单通AAO模板倒置放于PMMA上,贵金属纳米粒子团簇向下落于PMMA表面,而后放入热环境或者直接对PMMA加热,使PMMA变软,贵金属纳米粒子团簇浸入PMMA中;
第四步:将第三步形成的整体放入稀释的盐酸洗涤,去除单通AAO模板后,放入真空干燥箱干燥,得到贵金属纳米粒子规则排布的SERS衬底。
2.根据权利要求1所述的一种贵金属纳米粒子间距可控的SERS衬底制备方法,其特征在于,所述的贵金属为金或银或铜。
3.根据权利要求1所述的一种贵金属纳米粒子间距可控的SERS衬底制备方法,其特征在于,所述的PMMA厚度小于1mm。
4.根据权利要求1所述的一种贵金属纳米粒子间距可控的SERS衬底制备方法,其特征在于,所述的稀释的盐酸浓度小于5%。
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