CN106340555A - 一种新型柔性太阳能电池板 - Google Patents
一种新型柔性太阳能电池板 Download PDFInfo
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- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 16
- 229910052710 silicon Inorganic materials 0.000 claims description 14
- 239000010703 silicon Substances 0.000 claims description 14
- 238000005516 engineering process Methods 0.000 claims description 8
- 239000011888 foil Substances 0.000 claims description 8
- HJELPJZFDFLHEY-UHFFFAOYSA-N silicide(1-) Chemical compound [Si-] HJELPJZFDFLHEY-UHFFFAOYSA-N 0.000 claims description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 238000009792 diffusion process Methods 0.000 claims description 3
- 238000005538 encapsulation Methods 0.000 claims description 3
- 239000012528 membrane Substances 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 2
- 229910021529 ammonia Inorganic materials 0.000 claims description 2
- 238000003475 lamination Methods 0.000 claims description 2
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 2
- 229910000077 silane Inorganic materials 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 238000007654 immersion Methods 0.000 claims 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 abstract description 8
- 239000011787 zinc oxide Substances 0.000 abstract description 4
- 238000000034 method Methods 0.000 abstract description 3
- 230000003287 optical effect Effects 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 238000010521 absorption reaction Methods 0.000 abstract 1
- 238000005260 corrosion Methods 0.000 abstract 1
- 230000007797 corrosion Effects 0.000 abstract 1
- 238000002310 reflectometry Methods 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
- 239000013078 crystal Substances 0.000 description 6
- 230000005611 electricity Effects 0.000 description 5
- 239000010409 thin film Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 241000628997 Flos Species 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 239000006117 anti-reflective coating Substances 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000002835 absorbance Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 235000008216 herbs Nutrition 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 210000002268 wool Anatomy 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- H01L31/0481—Encapsulation of modules characterised by the composition of the encapsulation material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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Abstract
一种新型柔性太阳能电池板，提高了柔性太阳能电池板的发电效率，降低了生产成本。其中，透明的氧化锌导电薄膜代替了原有的栅线电机作为太阳能电池板的上部电极，降低了太阳能电池板由于栅线阴影遮挡造成的光学损失，减小了太阳能电池板栅线造成的接触电阻；其中，单晶硅片采用化学腐蚀工艺，将单晶硅片表面制绒，降低了单晶硅片的反射率，提高单晶硅片对太阳光的吸收率；其中，太阳能电池板下表面经过了钝化处理，降低了柔性太阳能电池板的电学损失；其中，单晶硅厚度为100微米，采用EVA塑料封装，使太阳能电池板具有了柔性。
Description
技术领域
本发明属于太阳能材料技术，涉及一种新型柔性太阳能电池板。
背景技术
目前，广泛使用的太阳能光伏板为晶硅太阳能电池板、非晶硅薄膜太阳能电池。晶硅太阳能电池板主要应用于发电系统中，具有成本低、效率高的优势。晶硅太阳能电池板表面采用金属栅线作为上部导电极，底部用金属板作为下部导电极。晶硅电池片封装在硬质的玻璃壳里，导致晶硅太阳能电池板厚重、便携性差。非晶硅薄膜太阳能电池成本高，光电转化效率低，应用较少。
发明内容
为了解决晶硅太阳能电池板厚重、便携性差的缺点，本发明提供了一种新型柔性太阳能电池板。该新型柔性太阳能电池板具有柔性，降低了太阳能电池板的光学损失，减小了太阳能电池板的接触电阻，降低了太阳能电池板的电学损失，提高了太阳能电池板的光电转化效率。
本发明采取的技术方案是：在单晶硅片表面，制备一层氧化锌导电薄膜作为太阳能电池板的上部电极，其厚度为300纳米，代替了原有的金属栅线电极；在单晶硅片采用化学腐蚀工艺，将单晶硅片表面进行绒化处理。
本发明的特征还在于：
其中，太阳能电池板的材料是单晶硅，厚度为100微米。
其中，太阳能电池板表面具有多孔纳米二氧化硅减反射膜。
其中，太阳能电池板下表面是经过了钝化处理的。
其中，太阳能电池板下部电极是由银丝构成的。
其中，太阳能电池板是采用EVA塑料封装的。
本发明的有益效果是提高了柔性太阳能电池板的发电效率，降低了生产成本。其中，透明的氧化锌导电薄膜代替了原有的栅线电机作为太阳能电池板的上部电极，降低了太阳能电池板由于栅线阴影遮挡造成的光学损失，减小了太阳能电池板栅线造成的的接触电阻；其中，单晶硅片采用化学腐蚀工艺，将单晶硅片表面制绒，降低了单晶硅片的反射率，提高单晶硅片对太阳光的吸收率；其中，太阳能电池板下表面经过了钝化处理，降低了柔性太阳能电池板的电学损失；其中，单晶硅厚度为100微米，采用EVA塑料封装，使太阳能电池板具有了柔性。
附图说明
下面结合附图和实施例对本发明进一步说明。
图1是本发明的截面图。
图2是本发明的电路原理图。
图3是本发明的减反射膜技术原理图。
图4是本发明的表面绒化技术原理图。
图中1.N型单晶硅，2.P型单晶硅，3.表面钝化膜，4.下部银栅线电极，5.上部柔性透明电极，6.表面光陷阱，7.EVA塑料膜。
具体实施方式
下面结合附图和具体实施方式对本发明进行详细的说明。
在图1所示的实施例中，新型柔性太阳能电池板的主体为N型单晶硅（1）与P型单晶硅（2）构成的PN结，N型单晶硅（1）是使用单晶硅片在高温下采用热扩散技术制成的：70摄氏度高温下，单晶固体中原子之间会产生空位和点缺陷，液态扩散物质POCl3借助高温下单晶硅原子之间的空位和点缺陷进行热运动，由高浓度向低浓度区域扩散，经过氧化、预扩散、再分布三个过程，最终形成N型单晶硅（1）。P型单晶硅（2）是使用铝源在相同环境下制成的。
表面钝化膜（3）是在通入硅烷和氨气在1200摄氏度高温下制得的氮化硅层，其厚度约为20纳米。
上部柔性透明电极（5）是利用射频磁控溅射技术以GaN缓冲层在EVA塑料膜（7）衬底上形成的GZO导电薄膜，GZO导电薄膜主要成分为含有镓掺杂的氧化锌。
表面光陷阱（6）是在腐蚀溶液中浸泡后形成的，腐蚀溶液是氟化氢、硝酸、去离子水按照1:2：50的比例混合配制而成的，反应温度为常温。
EVA塑料膜（7）是采用层压技术压制封装而成的，EVA塑料膜（7）厚度为0.1毫米。封装厚的柔性太阳能电池板具有柔性。通过改变EVA塑料膜（7）的颜色可以改变柔性太阳能电池板的颜色。
Claims (2)
1.一种新型柔性太阳能电池板，包括N型单晶硅（1），P型单晶硅（2），下部银栅线电极（4），上部柔性透明电极（5），EVA塑料膜（7）；其中，N型单晶硅（1）和P型单晶硅（2）是使用单晶硅片在高温下采用热扩散技术制成的；P型单晶硅（1）的表面钝化膜（3）是在通入硅烷和氨气在高温下制得的；N型单晶硅（1）的表面光陷阱（6）是在腐蚀溶液中浸泡后形成的。
2.如权利要求1所述的新型柔性太阳能电池板，其特征是：上部柔性透明电极（5）是利用射频磁控溅射技术制成的；EVA塑料膜（7）是采用层压技术压制封装而成的，柔性太阳能电池板的颜色是可以通过改变EVA塑料膜（7）的颜色来改变的。
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113410324A (zh) * | 2021-05-08 | 2021-09-17 | 华清八度光电集团有限公司 | 一种便于生产的柔性晶硅太阳能电池板 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1416179A (zh) * | 2001-10-31 | 2003-05-07 | 四川大学 | 透明导电膜前电极晶体硅太阳能电池 |
| CN201478328U (zh) * | 2009-09-02 | 2010-05-19 | 深圳市索阳新能源科技有限公司 | 铝基太阳能电池板 |
| CN102290460A (zh) * | 2010-06-17 | 2011-12-21 | 晶城科技有限公司 | 彩色太阳能模块构造 |
| CN202205762U (zh) * | 2011-09-23 | 2012-04-25 | 常州中弘光伏有限公司 | 优化透光的晶硅光伏组件 |
| CN103996743A (zh) * | 2014-05-23 | 2014-08-20 | 奥特斯维能源（太仓）有限公司 | 铝浆烧穿局部薄膜的背钝化点接触太阳能电池的制备方法 |
| CN204741023U (zh) * | 2015-07-14 | 2015-11-04 | 刘一锋 | 一种新型柔性太阳能电池板 |
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- 2015-07-10 CN CN201510403219.0A patent/CN106340555A/zh active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1416179A (zh) * | 2001-10-31 | 2003-05-07 | 四川大学 | 透明导电膜前电极晶体硅太阳能电池 |
| CN201478328U (zh) * | 2009-09-02 | 2010-05-19 | 深圳市索阳新能源科技有限公司 | 铝基太阳能电池板 |
| CN102290460A (zh) * | 2010-06-17 | 2011-12-21 | 晶城科技有限公司 | 彩色太阳能模块构造 |
| CN202205762U (zh) * | 2011-09-23 | 2012-04-25 | 常州中弘光伏有限公司 | 优化透光的晶硅光伏组件 |
| CN103996743A (zh) * | 2014-05-23 | 2014-08-20 | 奥特斯维能源（太仓）有限公司 | 铝浆烧穿局部薄膜的背钝化点接触太阳能电池的制备方法 |
| CN204741023U (zh) * | 2015-07-14 | 2015-11-04 | 刘一锋 | 一种新型柔性太阳能电池板 |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113410324A (zh) * | 2021-05-08 | 2021-09-17 | 华清八度光电集团有限公司 | 一种便于生产的柔性晶硅太阳能电池板 |
| CN113410324B (zh) * | 2021-05-08 | 2022-12-02 | 华清八度光电集团有限公司 | 一种便于生产的柔性晶硅太阳能电池板 |
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