CN106340454A - 高压二极管芯片上胶层膜厚控制方法 - Google Patents
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Abstract
本发明公开了电子元器件生产领域的一种高压二极管芯片上胶层膜厚控制方法。对经化学清洗干燥后的已烧结高压二极管芯片按照工艺要求进行管芯表面涂敷聚酰胺胶(上胶),再放于阶梯式程控烘箱内进行干燥(聚酰胺胶钝化)。从干燥后的生产批中抽取一根部件,置于金相显微镜的测试台上,调整显微镜焦距粗调、微调旋钮,分别对钝化层表面、芯片表面进行定位,可以测量出钝化层的膜厚。本发明具有测量精度高和提高成品的合格率等优点。
Description
技术领域
本发明涉及电子元器件生产领域的一种高压二极管管芯表面钝化层膜厚控制及测量方法。
背景技术
在半导体元器件生产中,对于高压二极管在芯片-引线组装烧结并进行管芯表面清洗处理后,要对管芯(芯片)表面进行上胶涂敷,将管芯保护起来(保护层亦称为钝化层)。芯片表面保护是提高高压器件电性能的重要工程,表面涂胶材料为高分子聚酰亚胺,上胶厚度对器件电性能和可靠性有直接的影响,胶层太薄,器件钝化层表面绝缘强度较低,器件在工作过程中易发生表面击穿,胶层太厚,器件反向击穿特性劣化,反向漏电流增加,使成品率降低。因此有必要对芯片表面钝化层厚度进行测试,根据测试结果去调整聚酰亚胺胶的粘度,从而保证管芯表面涂敷上胶厚度符合工艺要求,且一致性良好。
发明内容
本发明的目的是提供一种用于二极管生产中的二极管管芯表面钝化层膜厚控制及测量方法。
其发明目的是寻求一种准确测量高压二极管芯片表面钝化层(上胶涂敷层)膜厚的测试方法,通过控制钝化层膜厚工艺规范,提高器件的反向击穿特性,从而有利于提高产品测试成品率和器件的可靠性。
本发明目的是通过以下技术方案实现的:
1.一种高压二极管芯片上胶层膜厚控制方法,其特征在于:高压二极管芯片上胶涂膜工艺步骤如下:
1)按二极管芯片的型号在上胶机对应部位安装相应规格的导航模、涂布轮、回收轮和料钵;
2)开启上胶机上四个加热器,温度设定依次为:第一级75℃, 第二级60℃, 第三级50℃, 第四级60℃;
3)上胶机传送带速度为6.0~6.5米/秒, 在料钵中加入适量的聚酰胺胶涂料;
4)将装有待涂敷上胶的二极管芯片-引线烧结部件由氮气保管柜内移到上胶机始端工作台面,二极管芯片装在模具内,每批十模;
5)上胶工序室内温度设定为25±5℃,湿度为 ≤39%;
6)将装有待涂敷上胶的部件模具置于梳料架上,用锯条模将待加工件逐条、逐模顺序梳下放于上胶机传送带上, 调节导航模、涂布轮、回收轮的宽度、高度、速度,待涂敷上胶的二极管芯片居于涂布轮\回收轮中央;
7)将铝盒置于涂布机末端工作台上, 自传送带上移下已涂布的二极管芯片-引线烧结部件,装进铝盒,每铝盒装满18条锯条模后,盖上盖子,放入N2保管车内;
8)整批装盒结束后,用N2保管车将制连同铝盒移入专
用阶梯式程控干燥箱内,干燥工艺规范:
80℃×1 h→110℃×(1±1/6)h→180℃×1.5 h
→260℃×10h;
9)从涂布干燥后的生产批中抽取一根部件测定钝化膜层厚度,
测定用部件夹在专用夹具上置于金相显微镜的测试台上;
10)厚度测量:打开金相显微镜的灯开关,调整显微镜焦距粗调旋钮,使部件清晰可见,调节测试台左右\前后指定螺丝,将上胶后的制品芯片放在视野内的中心线,调节显微镜焦距细调旋钮,分别使涂布层表面、对应硅片表面与显微镜视野中的中心线一致,记下两个数值,其差为钝化膜层厚度测量数值;高压二极管芯片上胶涂膜厚度工艺控制规范为20~25μm。
本发明具有以下有益效果:
1.测量精度高;
2.提高成品的合格率。
附图说明
图1是高压二极管芯片上胶涂膜示意图。
图中:高压二极管芯片1和上胶涂膜层2。
具体实施方式
下面结合附图对本发明的内容做进一步的说明:
如图所示为高压二极管芯片上胶涂膜示意图,
对经化学清洗干燥后的已烧结高压二极管芯片按照工艺要求进行管芯表面涂敷聚酰胺胶(上胶),再放于阶梯式程控烘箱内进行干燥(聚酰胺胶钝化)。从干燥后的生产批中抽取一根部件,置于金相显微镜的测试台上,调整显微镜焦距粗调、微调旋钮,分别对钝化层表面、芯片表面进行定位,可以测量出钝化层的膜厚。
以金相显微镜可精确测量芯片钝化层的厚度,测试数值精确到1μm,实现高压二极管的芯片钝化膜厚度测试方法后,有针对性对钝化膜厚度进行控制,成品率较此前提高8.2%,器件的失效率达到七级以下(原来为六级)。
Claims (2)
1.一种高压二极管芯片上胶层膜厚控制方法,其特征在于:高压二极管芯片上胶涂膜工艺步骤如下:
1)按二极管芯片的型号在上胶机对应部位安装相应规格的导航模、涂布轮、回收轮和料钵;
2)开启上胶机上四个加热器,温度设定依次为:第一级75℃, 第二级60℃, 第三级50℃, 第四级60℃;
3)上胶机传送带速度为6.0~6.5米/秒, 在料钵中加入适量的聚酰胺胶涂料;
4)将装有待涂敷上胶的二极管芯片-引线烧结部件由氮气保管柜内移到上胶机始端工作台面,部件装在塑料模具内,每批十模;
5)上胶工序室内温度设定为25±5℃,湿度为 ≤39%;
6)将装有待涂敷上胶的部件模具置于梳料架上,用锯条模将待加工件逐条、逐模顺序梳下放于上胶机传送带上, 调节导航模、涂布轮、回收轮的宽度、高度、速度,待涂敷上胶的二极管芯片居于涂布轮\回收轮中央;
7)将铝盒置于涂布机末端工作台上, 自传送带上移下已涂布的二极管芯片-引线烧结部件,装进铝盒,每铝盒装满18条锯条模后,盖上盖子,放入N2保管车内;
8)整批装盒结束后,用N2保管车将制连同铝盒移入专
用阶梯式程控干燥箱内,干燥工艺规范:
80℃×1 h→110℃×(1±1/6)h→180℃×1.5 h
→260℃×10h;
9)从涂布干燥后的生产批中抽取一根部件测定钝化膜层厚度,
10)测定用部件夹在专用夹具上置于金相显微镜的测试台上;
厚度测量:打开金相显微镜的灯开关,调整显微镜焦距粗调旋钮,使部件清晰可见,调节测试台左右\前后指定螺丝,将上胶后的制品芯片放在视野内的中心线,调节显微镜焦距细调旋钮,分别使涂布层表面、对应硅片表面与显微镜视野中的中心线一致,记下两个数值,其差为钝化膜层厚度测量数值。
2.一种高压二极管芯片上胶层膜厚控制方法,其特征在于:
高压二极管芯片上胶涂膜厚度工艺控制规范为20~25μm。
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CN107742609A (zh) * | 2017-10-31 | 2018-02-27 | 南通皋鑫电子股份有限公司 | 一种cl08‑08系列高压二极管芯片表面一次涂布工艺 |
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CN107742609A (zh) * | 2017-10-31 | 2018-02-27 | 南通皋鑫电子股份有限公司 | 一种cl08‑08系列高压二极管芯片表面一次涂布工艺 |
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