CN106328557B

CN106328557B - Novel device for spin-drying sample in micro-nano device manufacturing process

Info

Publication number: CN106328557B
Application number: CN201510334591.0A
Authority: CN
Inventors: 何亮; 熊彪; 麦立强; 郝志锰
Original assignee: Wuhan University of Technology WUT
Current assignee: Wuhan University of Technology WUT
Priority date: 2015-06-16
Filing date: 2015-06-16
Publication date: 2020-04-21
Anticipated expiration: 2035-06-16
Also published as: CN106328557A

Abstract

The invention relates to a device for spin-drying a sample in a micro-nano device manufacturing process, which is characterized by comprising a Teflon device for spin-drying, wherein a groove is formed in the Teflon device, and a toothed disc-shaped Teflon is arranged at the edge of the Teflon device. The whole set of Teflon device and the whole set of process flow disclosed by the invention are simple and convenient to operate, low in cost, practical and suitable for samples of various sizes and various types.

Description

Novel device for spin-drying sample in micro-nano device manufacturing process

Technical Field

The invention relates to a whole set of sample processing teflon device, in particular to a whole set of device for spin-drying a sample in a micro-nano device manufacturing process.

Background

Currently, in the micromachining processes of single crystal silicon, silicon carbide, oxide layer-containing substrates, glass substrates, and ceramic substrates, all external agents in contact with the substrates are possible sources of impurities on the substrates. This includes the following aspects: pollution of the substrate in the process of processing and forming, environmental pollution, pollution caused by water, pollution brought by reagents, pollution caused by industrial gas, pollution caused by the process, pollution caused by human bodies and the like. In the production of semiconductor devices, the substrate must be cleaned rigorously, otherwise the minute contamination of the substrate can cause the device to fail. The cleaning is intended to remove contaminating impurities, including metals, organic and inorganic substances, etc., from the surface of the substrate. Some of these impurities exist in an atomic state or an ionic state, and some exist in a thin film form or a particle form on the substrate surface. The manufacture of the micro-nano device takes cleaning and obtaining a clean substrate as a starting point, the substrate cleaning is the most important and most frequent step in the manufacture of the semiconductor device, and the efficiency of the substrate cleaning directly influences the yield, the performance and the reliability of the device, so that high requirements on the high efficiency and the reliability of the cleaning process are provided.

Disclosure of Invention

The technical problem to be solved by the invention is to provide a device for spin-drying a sample in the manufacturing process of a micro-nano device, which can efficiently and reliably obtain a clean sample so as to shorten the manufacturing period of the device, aiming at various pollution defects in the basic processing process in the prior art.

The technical scheme adopted by the invention for solving the technical problems is as follows: the utility model provides a device that is arranged in receiving device manufacture in-process sample to spin-dry is received to structure, is including the teflon device that is used for spin-drying, teflon device inside is provided with the recess, and the edge is provided with dentate disc teflon.

According to the scheme, the upper part of the Teflon device is a Teflon object stage with a hollowed-out toothed edge, the lower part of the Teflon object stage is a DC-35L-1004 motor, and the parameters are 230V and 50 Hz.

According to the scheme, the Teflon object stage is connected with the motor through threads.

According to the scheme, the rotating speed of the Teflon device is convenient and adjustable.

The device for spin-drying the sample in the manufacturing process of the micro-nano device has the following beneficial effects:

1. the invention adopts the flexible and detachable Teflon object stage and the motor, so that the sample can be conveniently controlled;

2. the method can be suitable for samples with various sizes, and the whole process is more efficient and reliable;

3. the use is more convenient, the operability is strong, and a good foundation is laid for the subsequent device manufacture.

Drawings

The invention will be further described with reference to the accompanying drawings and examples, in which:

FIG. 1 is a top view of a Teflon object stage in a device for spin-drying a sample in a micro-nano device manufacturing process according to the invention;

FIG. 2 is a schematic diagram of a structure of a detachable motor of a Teflon device in the device for spin-drying a sample in the manufacturing process of a micro-nano device;

fig. 3 is a diagram of an assembled teflon device in the sample spin-drying device for the micro-nano device manufacturing process.

Detailed Description

For a more clear understanding of the technical features, objects and effects of the present invention, embodiments of the present invention will now be described in detail with reference to the accompanying drawings.

A device for spin-drying a sample in a micro-nano device manufacturing process comprises a Teflon device for spin-drying, wherein a groove is formed in the Teflon device, a toothed disc-shaped Teflon is arranged at the edge of the Teflon device, a Teflon object stage with a hollowed toothed edge is arranged at the upper part of the Teflon device, a DC-35L-1004 motor is arranged at the lower part of the Teflon device, and parameters are 230V and 50 Hz; the Teflon object stage is connected with the motor through threads; the rotating speed of the Teflon device is convenient and adjustable.

As shown in fig. 1-3, in the embodiment of the device for spin-drying a sample in a micro-nano device manufacturing process according to the invention,

1) cutting the purchased silicon wafer into squares with the side length of 2 cm multiplied by 2 cm;

2) cleaning the silicon wafer;

3) the silicon wafer ultrasonically cleaned in the deionized water is flatly placed on a Teflon device for drying, and the substrate is dried by spin of the Teflon device (can be assembled with a small motor). The hollow toothed edge can clamp the edge of the substrate to prevent the substrate from being thrown out at a high rotating speed, and can throw out residual liquid on the substrate to prevent the substrate from being stained with the liquid so as to facilitate the following drying operation.

Specific examples, without limiting the claims of the present patent, such as the washing and spin-drying of silicon carbide:

example 1, the procedure was as follows:

1) cutting the purchased silicon carbide into squares with the side length of 2 cm multiplied by 2 cm;

2) cleaning the silicon carbide substrate;

3) and (3) flatly placing the silicon carbide substrate subjected to ultrasonic cleaning in deionized water on a teflon device for spin-drying, and spin-drying the substrate by utilizing the spin of the teflon device. The hollow toothed edge can clamp the edge of the substrate to prevent the substrate from being thrown out at a high rotating speed, and can throw out residual liquid on the substrate to prevent the substrate from being stained with the liquid so as to facilitate the following drying operation.

Example 2, the procedure was as follows:

1) cutting the purchased silicon substrate containing the oxide layer into a square with the side length of 1.5 cm multiplied by 2 cm;

2) cleaning the silicon wafer;

Example 3, procedure was as follows:

1) cutting the purchased ceramic substrate into a square with the side length of 1.5 cm multiplied by 1.5 cm;

2) cleaning the ceramic substrate;

3) and (3) flatly placing the cleaned ceramic substrate on a teflon device for spin-drying, and spin-drying the substrate by utilizing the spin of the teflon device. The hollow toothed edge can clamp the edge of the substrate to prevent the substrate from being thrown out at a high rotating speed, and can throw out residual liquid on the substrate to prevent the substrate from being stained with the liquid so as to facilitate the following drying operation.

Example 4, procedure was as follows:

1) 2 cm of a sample subjected to UV lithography, the photoresist used was PR 19000A, thickness 10m, and photoresist dose 400 mJ/cm²；

2) Washing a beaker used for developing and rinsing a sample and other devices in an ultrasonic device for 4 times by using deionized water, loading the sample subjected to ultraviolet lithography in a Teflon device, and placing the sample in the beaker;

3) injecting a proper amount of RD 6 developing solution into a beaker for developing (the developing solution is slightly over a substrate), continuously soaking for 50 seconds, controlling a lifting rod of the Teflon device to enable the device to shake up and down and left and right in the soaking process, so that a sample can be fully contacted with a reagent, and then pouring the developing solution into a recovery bottle;

4) injecting a proper amount of deionized water into the beaker for rinsing, continuously soaking for 30 seconds, controlling a lifting rod of the Teflon device to enable the device to shake up and down, left and right in the soaking process, so that a sample can be fully contacted with the deionized water, and then pouring the deionized water into a recovery bottle;

5) washing the beakers with deionized water in an ultrasonic device for 4 times;

6) and (3) flatly placing the sample on a teflon device for spin-drying, and spin-drying the sample by utilizing the spin of the teflon device. The hollow toothed edge can clamp the edge of the substrate to prevent the substrate from being thrown out at a high rotating speed, and can throw out residual liquid on the substrate to prevent the substrate from being stained with the liquid so as to facilitate the following drying operation.

While the present invention has been described with reference to the embodiments shown in the drawings, the present invention is not limited to the embodiments, which are illustrative and not restrictive, and it will be apparent to those skilled in the art that various changes and modifications can be made therein without departing from the spirit and scope of the invention as defined in the appended claims.

Claims

1. The utility model provides a device that is arranged in receiving device preparation in a nanometer device to spin-dry sample, its characterized in that is including the teflon device that is used for spin-drying, the teflon device is inside to be provided with the recess, and the edge is provided with dentate disc teflon, teflon device upper portion is the teflon objective table that is fretwork dentate edge, lower part DC-35L-1004 type motor, and the parameter is 230V, 50 Hz.

2. The device for spin-drying the sample in the micro-nano device manufacturing process according to claim 1, wherein the Teflon object stage is in threaded connection with a motor.

3. The device for spin-drying the sample in the micro-nano device manufacturing process according to claim 1, wherein the rotation speed of the Teflon device is adjustable.