CN106024693B - Teflon fixture and its application for semiconductor microactuator nano parts wet processing - Google Patents
Teflon fixture and its application for semiconductor microactuator nano parts wet processing Download PDFInfo
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- CN106024693B CN106024693B CN201610336237.6A CN201610336237A CN106024693B CN 106024693 B CN106024693 B CN 106024693B CN 201610336237 A CN201610336237 A CN 201610336237A CN 106024693 B CN106024693 B CN 106024693B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Weting (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The present invention relates to a kind of Teflon fixture for semiconductor microactuator nano parts wet processing and its application, described includes first clamping plate, second clamping plate, the first slide bar, the second slide bar and handle, and first clamping plate and second clamping plate are arranged in parallel；First slide bar one end is vertical to be fixed in first clamping plate, and other end cooperation passes through second clamping plate；Second slide bar one end is vertical to be fixed in second clamping plate, and other end cooperation passes through first clamping plate；Handle is fixed on the first slide bar or the second slide bar, is respectively equipped with mutually matched card slot in first clamping plate and second clamping plate one side facing each other.First clamping plate, second clamping plate, the first slide bar, the second slide bar and handle are process by Teflon material.The clamp structure is simple, clamping is convenient；The fixture can be applied to the cleanings of semiconductor microactuator nano parts, etching, development, rinse, in the wet processings such as remove photoresist, it is high-efficient, it is easy to operate.
Description
Technical field
The invention belongs to the micro fabrication fields of semiconductor microactuator nano parts, and in particular to one kind is used for semiconductor micro-nano device
The Teflon fixture of part wet processing and its application.
Background technique
Currently, monocrystalline silicon, silicon carbide, band oxidation laminar substrate, glass substrate, ceramic substrate and photo mask board are in semiconductor
In the micro fabrication of device, all foreign mediums being in contact with substrate all are the possibility sources that impurity pollution is speckled on substrate.
This mainly includes the following aspects: pollution of substrate during machine-shaping, the pollution during ultraviolet photolithographic, environment are dirty
Pollution caused by pollution, technique itself caused by pollution caused by dye, water, the pollution of reagent bring, industrial gasses, human body cause
Pollution etc..In the production of semiconductor microactuator nano parts, substrate and mask plate must just be can be carried out in super-clean environment through stringent cleaning
Next step process, otherwise its micropollution having and impurity will lead to device performance decline and component failure.
Substrate and the purpose of mask plate cleaning are to remove the pollution impurity of substrate and mask plate surface, including metal, have
Machine object and inorganic matter etc..These impurity with the presence of with state of atom or ionic condition, some is in the form of a film or particle form
It is present in substrate and mask plate surface.The production of semiconductor microactuator nano parts is the base to clean and obtain clean substrate as starting point
Plate cleaning is most important most frequent step in semiconductor devices manufacture, and its efficiency will directly influence the finished product of device
Rate, Performance And Reliability, this just proposes very high requirement to the high efficiency of cleaning process and reliability.And photo mask board is
No is completely that the whether successful major reason of photoetching process if there is pollutant on mask plate can hinder passing through for ultraviolet light,
Eventually lead to the failure of photoetching.Therefore, one kind is developed in micro-nano device manufacturing process, is used for 4/6 inch or larger size
Wafer, photo mask board and various different sample sizes for cleaning, developing, rinse, removing photoresist, wet etching, appropriateness get rid of
The need that the sample clamp of the programs such as dry becomes a reality.
Summary of the invention
The object of the present invention is to provide a kind of Teflon fixture for semiconductor microactuator nano parts wet processing, the fixture knots
Structure is simple, clamping is convenient；The fixture can be applied to the cleanings of semiconductor microactuator nano parts, etching, development, rinse, remove photoresist etc. it is wet
It is high-efficient in method technique, it is easy to operate.
The technical scheme adopted by the invention is that:
A kind of Teflon fixture for semiconductor microactuator nano parts wet processing, including first clamping plate, second clamping plate, first
Slide bar, the second slide bar and handle, first clamping plate and second clamping plate are arranged in parallel；First slide bar one end it is vertical be fixed on the first folder
What the other end cooperated on plate passes through second clamping plate；Second slide bar one end is vertical to be fixed in second clamping plate, other end cooperation
Across first clamping plate；Handle is fixed on the first slide bar or the second slide bar, first clamping plate and second clamping plate one side facing each other
On be respectively equipped with mutually matched card slot.First clamping plate, second clamping plate, the first slide bar, the second slide bar and handle are by Teflon
Material is process.
Further, card slot is semicircular straight-line groove.
Further, the first slide bar and first clamping plate, the second slide bar and second clamping plate, handle and the first slide bar or second are sliding
Bar is connected through a screw thread fixation respectively.
A kind of wet-cleaning carrying out wafer using the above-mentioned Teflon fixture for semiconductor microactuator nano parts wet processing
Technique includes the following steps:
1) the Teflon fixture for being used for semiconductor microactuator nano parts wet processing is placed in beaker, is cleaned by ultrasonic with acetone；
2) wafer (passing through tweezers) is taken, wafer is placed in card slot and passes through first clamping plate and second clamping plate for wafer clamp
It fastens；
3) handle is held, wafer is sequentially placed into ultrasound in the mixed liquor for both being cleaned by ultrasonic in ethyl alcohol and acetone or being put into
Cleaning；
4) wafer (passing through tweezers) is taken out, wafer is transferred in baking oven or is dried in thermal station, drying temperature remains
135-180 °C。
It is a kind of to carry out the wet of photo mask board using the above-mentioned Teflon fixture for semiconductor microactuator nano parts wet processing
Method cleaning process, includes the following steps:
1) the Teflon fixture for being used for semiconductor microactuator nano parts wet processing is placed in beaker, successively uses ethyl alcohol and acetone
Ultrasonic cleaning；
2) photo mask board is taken, photo mask board is placed in card slot and passes through first clamping plate and second clamping plate for photoetching
Mask plate is fixedly clamped；
3) handle is held, it is molten that photo mask board is sequentially placed into the mixing for both being cleaned by ultrasonic in ethyl alcohol and acetone or being put into
It is cleaned by ultrasonic in liquid；
4) photo mask board is taken out, is wiped completely with dust-free paper, photo mask board is transferred in baking oven or is dried in thermal station
Dry, drying temperature remains 100-150 °C.
A kind of metal film carrying out wafer using the above-mentioned Teflon fixture for semiconductor microactuator nano parts wet processing is wet
Method etching technics, includes the following steps:
1) the Teflon fixture for being used for semiconductor microactuator nano parts wet processing is placed in beaker, successively uses ethyl alcohol and acetone
Ultrasonic cleaning；
2) wafer for having carried out ultraviolet photolithographic is placed in card slot and passes through first clamping plate and second clamping plate for wafer clamp
It fastens；
3) wafer is placed in the beaker equipped with etching liquid the time required to being persistently dipped to, handle is controlled in soaking process
Make its upper and lower double swerve, come into full contact with wafer with etching liquid, wafer is placed in beaker after immersion and uses deionized water
Water flow rinses wafer, and etching liquid and deionized water are poured into returnable bottle after flushing；
4) wafer is placed in equipped with the time required to being persistently dipped in the beaker for removing glue, handle is controlled in soaking process
Make its upper and lower double swerve, come into full contact with wafer with glue is removed, wafer is placed in beaker after immersion and uses deionized water
Stream rinses wafer, and glue and deionized water will be gone to pour into returnable bottle after flushing；
5) wafer (passing through tweezers) is taken out, wafer is transferred in baking oven or is dried in thermal station, drying temperature remains
135-180 °C。
A kind of wet etching carrying out wafer using the above-mentioned Teflon fixture for semiconductor microactuator nano parts wet processing
Technique includes the following steps:
1) the Teflon fixture for being used for semiconductor microactuator nano parts wet processing is placed in beaker, successively uses ethyl alcohol and acetone
Ultrasonic cleaning；
2) (pass through tweezers) wafer for having carried out ultraviolet photolithographic to be placed in card slot and by first clamping plate and the second folder
Wafer is fixedly clamped by plate；
3) wafer is placed in the beaker equipped with etching liquid the time required to being persistently dipped to, handle is controlled in soaking process
Make its upper and lower double swerve, come into full contact with wafer with etching liquid, wafer is placed in beaker after immersion and uses deionized water
Water flow rinses wafer, and etching liquid and deionized water are poured into returnable bottle after flushing；
4) wafer (passing through tweezers) is taken out, wafer is transferred in baking oven and is dried, drying temperature remains 135-180 °C.
It is a kind of to be developed using the above-mentioned Teflon fixture for semiconductor microactuator nano parts wet processing, rinse, removed photoresist
Wet processing, include the following steps:
1) it is ready to carry out the semiconductor microactuator nano parts sample of ultraviolet photolithographic processing；
2) beaker of development and rinse will be used for and be used for the Teflon fixture use of semiconductor microactuator nano parts wet processing
Deionized water is cleaned in Vltrasonic device, then will inject appropriate developer solution in the beaker for being used to develop；
3) sample for having carried out ultraviolet photolithographic is placed in card slot and is covered photoetching by first clamping plate and second clamping plate
Template is fixedly clamped, and sample is placed in the beaker of development the time required to being persistently dipped to, and handle is controlled in soaking process to be made
Its upper and lower double swerve, comes into full contact with sample with developer solution, and swing handle suitably dries sample after immersion, then will development
Liquid pours into returnable bottle；
4) it transfers the sample into the beaker for rinse, and injects appropriate rinse liquid, the time required to being persistently dipped to,
Handle is controlled in soaking process makes its upper and lower double swerve, comes into full contact with sample with rinse liquid, swing handle is by sample after immersion
Product suitably dry, and rinse liquid is then poured into returnable bottle；
5) above-mentioned each beaker is cleaned in Vltrasonic device using deionized water；
6) will develop, the drying of the sample of rinse；
7) the clean sample surfaces of rinse are plated into one layer of metal or nonmetal film, then sample is placed in card slot and is led to
It crosses first clamping plate and sample is fixedly clamped by second clamping plate, injected into the clean beaker for removing photoresist and suitable remove glue (such as
For positive photoresist or negtive photoresist corresponding organic solvent or dedicated remove glue)；
8) sample is placed in the beaker to remove photoresist the time required to being persistently dipped to, handle is controlled in soaking process to be made thereon
Lower double swerve, comes into full contact with sample with glue is removed, and swing handle suitably dries sample after immersion, then glue will be gone to fall
Enter returnable bottle；
9) it transfers the sample into the clean beaker for rinse, and injects appropriate rinse liquid, be persistently dipped to and taken
Between, controlling handle in soaking process makes its upper and lower double swerve, comes into full contact with sample with rinse liquid, swing handle after immersion
Sample is suitably dried, rinse liquid is then poured into returnable bottle；
10) above-mentioned each beaker is cleaned in Vltrasonic device using deionized water；
11) it will remove photoresist and dried with the sample of rinse.
The beneficial effects of the present invention are:
1. in use, sample is placed on card slot, by mobile first slide bar or the second slide bar adjust first clamping plate and
The distance between second clamping plate can clamp sample, easy to operate；The fixture can place sample of different shapes, first clamping plate
It can control and move freely with second clamping plate, conveniently be placed and taken out various sizes of sample；Entire fixture is by Teflon material
It is process, has many advantages, such as the anti-alkali corrosion of anti-strong acid burn into, is applicable in completely in various organic solvents, it is ensured that
Effectively cleaning and wet processing micro-nano device in a variety of solution environmentals, and be unlikely to damage device and stain sample.
2. the clamping that semicircle card slot is suitable for the semiconductor microactuator nano parts sample with curved surface such as wafer is fixed.
3. being connected through a screw thread fixation, fixture can be rapidly assembled and disassembled, it is easy to carry.
Detailed description of the invention
Fig. 1 is the main view for the embodiment of the Teflon fixture of semiconductor microactuator nano parts wet processing.
Fig. 2 is the top view of Fig. 1.
In figure: 1- form friction pattern；2- threaded post and threaded hole；The second slide bar of 3-；4- first clamping plate；5- through-hole；6- handle；7-
First slide bar；8- second clamping plate；9- card slot.
Specific embodiment
The present invention is further illustrated with reference to the accompanying drawings and examples.
As depicted in figs. 1 and 2, a kind of Teflon fixture for semiconductor microactuator nano parts wet processing, including the first folder
Plate 4, second clamping plate 8, the first slide bar 7, the second slide bar 3 and handle 6, first clamping plate 4 and second clamping plate 8 are arranged in parallel, and first is sliding
7 one end of bar is vertical to be fixed in first clamping plate 4, other end cooperation passes through second clamping plate 8, and 3 one end of the second slide bar is vertical
It is fixed in second clamping plate 8, the first clamping plate 4(first clamping plate 4 that passes through of other end cooperation is equipped with and cooperates with the second slide bar 3
Through-hole 5, second clamping plate 8 are equipped with the through-hole 5 cooperated with the first slide bar 7), handle 6 is fixed on the first slide bar 7 and (sets on handle 6
Have form friction pattern 1), mutually matched card slot 9, the first folder are respectively equipped in first clamping plate 4 and the one side facing each other of second clamping plate 8
Plate 4, second clamping plate 8, the first slide bar 7, the second slide bar 3 and handle 6 are process by Teflon material.In use, by sample
It is placed on card slot 9, the distance between first clamping plate 4 and second clamping plate 8 is adjusted by mobile first slide bar 7 or the second slide bar 3
Sample can be clamped, it is easy to operate；The fixture can place sample of different shapes, and first clamping plate 4 and second clamping plate 8 can be left
The right side moves freely, and is conveniently placed and taken out various sizes of sample；Entire fixture has anti-strong acid rotten as made by Teflon
Erosion, anti-alkali corrosion, in various organic solvents completely be applicable in the advantages that, it is ensured that effectively cleaned in a variety of solution environmentals
With wet processing micro-nano device and be unlikely to damage device and stain sample.
As shown in Fig. 2, in the present embodiment, card slot 9 is semicircular straight-line groove.Semicircle card slot is suitable for the tool such as wafer
There is the clamping of the semiconductor microactuator nano parts sample of curved surface to fix.
As depicted in figs. 1 and 2, in the present embodiment, the first slide bar 7 and first clamping plate 4, the second slide bar 3 and second clamping plate
8, handle 6 is connected through a screw thread that fixed (one end of the first slide bar 7 and one end of the second slide bar 3 are set respectively with the first slide bar 7 respectively
There is threaded post, the threaded hole with the cooperation of respective threaded column is respectively equipped in first clamping plate 4 and second clamping plate 8, one end of handle 6 is set
There is threaded post, the first slide bar 7 is equipped with matched threaded hole).It is connected and fixed, can be incited somebody to action by threaded post and threaded hole 2
Fixture is rapidly assembled and disassembled, easy to carry.
Fixture of the invention can be applied to the cleanings of semiconductor microactuator nano parts, etching, development, rinse, the wet processes such as remove photoresist
In technique, detailed process is as follows.
A kind of wet-cleaning carrying out wafer using the above-mentioned Teflon fixture for semiconductor microactuator nano parts wet processing
Technique includes the following steps:
1) the Teflon fixture for being used for semiconductor microactuator nano parts wet processing is placed in beaker, is cleaned by ultrasonic with acetone；
2) (pass through tweezers) and take wafer (taking common wafer size is 4 cun and 6 cun, is also possible to the wafer of other sizes,
It is also possible to glass substrate), wafer is placed in card slot 9 and is fastened wafer clamp by first clamping plate 4 and second clamping plate 8
It is fixed；
3) handle 6 is held, wafer is sequentially placed into the mixed liquor for both being cleaned by ultrasonic in ethyl alcohol and acetone or being put into and is surpassed
Sound cleaning；
4) wafer (passing through tweezers) is taken out, wafer is transferred in baking oven or is dried in thermal station, drying temperature remains
135-180 °C (drying time is generally 20-60 minutes).
It is a kind of to carry out the wet of photo mask board using the above-mentioned Teflon fixture for semiconductor microactuator nano parts wet processing
Method cleaning process, includes the following steps:
1) the Teflon fixture for being used for semiconductor microactuator nano parts wet processing is placed in beaker, successively uses ethyl alcohol and acetone
Ultrasonic cleaning；
2) photo mask board is taken, photo mask board is placed in card slot 9 to and is passed through first clamping plate 4 and second clamping plate 8 will
Photo mask board is fixedly clamped；
3) handle 6 is held, photo mask board is sequentially placed into the mixing for both being cleaned by ultrasonic in ethyl alcohol and acetone or being put into
It is cleaned by ultrasonic in solution；
4) photo mask board is taken out, is wiped completely with dust-free paper, photo mask board is transferred in baking oven or is dried in thermal station
Dry, drying temperature remains 100-150 °C.
A kind of metal film carrying out wafer using the above-mentioned Teflon fixture for semiconductor microactuator nano parts wet processing is wet
Method etching technics, includes the following steps:
1) the Teflon fixture for being used for semiconductor microactuator nano parts wet processing is placed in beaker, successively uses ethyl alcohol and acetone
Ultrasonic cleaning；
2) (pass through tweezers) by carried out ultraviolet photolithographic wafer (in the present embodiment, for 6 cun with Au metal film and
The monocrystalline silicon wafer crystal of photoetching agent pattern) it is placed in card slot 9 and wafer is fixedly clamped by first clamping plate 4 and second clamping plate 8；
3) wafer is placed in equipped with etching liquid (is in the present embodiment, KI+I2) beaker in be persistently dipped to and taken
Between, controlling handle 6 in soaking process makes its upper and lower double swerve, comes into full contact with wafer with etching liquid, by wafer after immersion
It is placed in beaker and rinses wafer with deionized water water flow, etching liquid and deionized water are poured into returnable bottle after flushing；
4) wafer is placed in equipped with the time required to being persistently dipped in the beaker for removing glue, handle is controlled in soaking process
6 make its upper and lower double swerve, come into full contact with wafer with glue is removed, wafer is placed in beaker after immersion and uses deionized water
Water flow rinses wafer, and glue and deionized water will be gone to pour into returnable bottle after flushing；
5) wafer (passing through tweezers) is taken out, wafer is transferred in baking oven or is dried in thermal station, drying temperature remains
135-180 °C (drying time is generally 20-60 minutes).
A kind of wet etching carrying out wafer using the above-mentioned Teflon fixture for semiconductor microactuator nano parts wet processing
Technique includes the following steps:
1) the Teflon fixture for being used for semiconductor microactuator nano parts wet processing is placed in beaker, successively uses ethyl alcohol and acetone
Ultrasonic cleaning；
2) wafer of ultraviolet photolithographic will have been carried out (in the present embodiment, for 6 cun with photoetching agent pattern by (passing through tweezers)
Monocrystalline silicon wafer crystal) be placed in card slot 9 and wafer be fixedly clamped by first clamping plate 4 and second clamping plate 8；
3) wafer is placed in equipped with etching liquid (generally HF, H3PO4, the etching liquids such as KOH, TMAH) beaker in persistently soak
For bubble to required time, controlling handle 6 in soaking process makes its upper and lower double swerve, comes into full contact with wafer with etching liquid, soaks
Wafer is placed in beaker after bubble and rinses wafer with deionized water water flow, pours into back etching liquid and deionized water after flushing
Receive bottle；
4) wafer (passing through tweezers) is taken out, wafer is transferred in baking oven or is dried in thermal station, drying temperature remains
135-180 °C (general drying time is 20-60 minutes).
It is a kind of to be developed using the above-mentioned Teflon fixture for semiconductor microactuator nano parts wet processing, rinse, removed photoresist
Wet processing, include the following steps:
1) it is ready to carry out the semiconductor microactuator nano parts sample of ultraviolet photolithographic processing；
2) beaker of development and rinse will be used for and be used for the Teflon fixture use of semiconductor microactuator nano parts wet processing
Deionized water is cleaned in Vltrasonic device, then will inject appropriate developer solution in the beaker for being used to develop；
3) sample for having carried out ultraviolet photolithographic is placed in card slot 9 and passes through first clamping plate 4 and second clamping plate 8 for photoetching
Mask plate is fixedly clamped, and sample is placed in the beaker of development the time required to being persistently dipped to, handle 6 is controlled in soaking process
Make its upper and lower double swerve, come into full contact with sample with developer solution, swing handle 6 suitably dries sample after immersion, then will
Developer solution pours into returnable bottle；
4) it transfers the sample into the beaker for rinse, and injects appropriate rinse liquid, the time required to being persistently dipped to,
Handle 6 is controlled in soaking process makes its upper and lower double swerve, comes into full contact with sample with rinse liquid, and swing handle 6 will after immersion
Sample suitably dries, and rinse liquid is then poured into returnable bottle；
5) above-mentioned each beaker is cleaned in Vltrasonic device using deionized water；
6) will develop, the drying of the sample of rinse；
7) the clean sample surfaces of rinse are plated into one layer of metal or nonmetal film, then sample is placed in card slot 9 simultaneously
Sample is fixedly clamped by first clamping plate 4 and second clamping plate 8, is injected into the clean beaker for removing photoresist and suitable removes glue
(such as the corresponding organic solvent for positive photoresist or negtive photoresist or dedicated removing glue)；
8) sample is placed in the beaker to remove photoresist the time required to being persistently dipped to, handle 6 is controlled in soaking process makes it
It shakes up and down, comes into full contact with sample with glue is removed, swing handle 6 suitably dries sample after immersion, then will remove photoresist
Liquid pours into returnable bottle；
9) it transfers the sample into the clean beaker for rinse, and injects appropriate rinse liquid, be persistently dipped to and taken
Between, controlling handle 6 in soaking process makes its upper and lower double swerve, comes into full contact with sample with rinse liquid, hand is swung after immersion
Handle 6 suitably dries sample, and rinse liquid is then poured into returnable bottle；
10) above-mentioned each beaker is cleaned in Vltrasonic device using deionized water；
11) it will remove photoresist and dried with the sample of rinse.
It should be understood that for those of ordinary skills, it can be modified or changed according to the above description,
And all these modifications and variations should all belong to the protection domain of appended claims of the present invention.
Claims (8)
1. a kind of Teflon fixture for semiconductor microactuator nano parts wet processing, it is characterised in that: including first clamping plate, second
Clamping plate, the first slide bar, the second slide bar and handle, first clamping plate and second clamping plate are arranged in parallel；First slide bar one end is vertical to be consolidated
It is scheduled in first clamping plate, other end cooperation passes through second clamping plate；Second slide bar one end is vertical to be fixed in second clamping plate, separately
One end fits pass through first clamping plate；Handle is fixed on the first slide bar or the second slide bar, and first clamping plate and second clamping plate are mutual
Mutually matched card slot, first clamping plate, second clamping plate, the first slide bar, the second slide bar and handle are respectively equipped in the one side of face
It is process by Teflon material.
2. being used for the Teflon fixture of semiconductor microactuator nano parts wet processing as described in claim 1, it is characterised in that: card slot
For semicircular straight-line groove.
3. being used for the Teflon fixture of semiconductor microactuator nano parts wet processing as described in claim 1, it is characterised in that: first
Slide bar and first clamping plate, the second slide bar and second clamping plate, handle and the first slide bar or the second slide bar are connected through a screw thread solid respectively
It is fixed.
4. a kind of Teflon fixture for semiconductor microactuator nano parts wet processing utilized as described in claims 1 to 3 is any
Carry out the wet clean process of wafer, it is characterised in that: include the following steps,
1) the Teflon fixture for being used for semiconductor microactuator nano parts wet processing is placed in beaker, is cleaned by ultrasonic with acetone；
2) wafer is taken, wafer is placed in card slot and wafer is fixedly clamped by first clamping plate and second clamping plate；
3) handle is held, it is clear that wafer is sequentially placed into ultrasound in the mixed liquor for both being cleaned by ultrasonic in ethyl alcohol and acetone or being put into
It washes；
4) wafer is taken out, wafer is transferred in baking oven or is dried on warm table, drying temperature remains 135-180 °C.
5. a kind of Teflon fixture for semiconductor microactuator nano parts wet processing utilized as described in claims 1 to 3 is any
Carry out the wet clean process of photo mask board, it is characterised in that: include the following steps,
1) the Teflon fixture for being used for semiconductor microactuator nano parts wet processing is placed in beaker, successively with ethyl alcohol and acetone ultrasound
Cleaning；
2) photo mask board is taken, photo mask board is placed in card slot and passes through first clamping plate and second clamping plate for mask
Board clamping is fixed；
3) handle is held, photo mask board is sequentially placed into the mixed solution for both being cleaned by ultrasonic in ethyl alcohol and acetone or being put into
Ultrasonic cleaning；
4) it takes out photo mask board photo mask board is transferred in baking oven or is dried in thermal station with dust-free paper wiped clean, dry
Dry temperature remains 100-150 °C.
6. a kind of Teflon fixture for semiconductor microactuator nano parts wet processing utilized as described in claims 1 to 3 is any
Carry out the metal film wet-etching technology of wafer, it is characterised in that: include the following steps,
1) the Teflon fixture for being used for semiconductor microactuator nano parts wet processing is placed in beaker, successively with ethyl alcohol and acetone ultrasound
Cleaning；
2) wafer for having carried out metal film deposition and ultraviolet photolithographic, development and rinse is placed in card slot and passes through first clamping plate
Wafer is fixedly clamped with second clamping plate；
3) wafer is placed in the beaker equipped with etching liquid the time required to being persistently dipped to, handle is controlled in soaking process makes it
It shakes up and down, comes into full contact with wafer with etching liquid, wafer is placed in beaker after immersion and with deionized water water flow
Wafer is rinsed, etching liquid and deionized water are poured into returnable bottle after flushing；
4) wafer is placed in equipped with the time required to being persistently dipped in the beaker for removing glue, controlling handle in soaking process makes it
It shakes up and down, comes into full contact with wafer with glue is removed, wafer is placed in beaker after immersion and with deionized water water flow
Wafer is rinsed, glue and deionized water will be gone to pour into returnable bottle after flushing；
5) wafer is taken out, wafer is transferred in baking oven or is dried in thermal station, drying temperature remains 135-180 °C.
7. a kind of Teflon fixture for semiconductor microactuator nano parts wet processing utilized as described in claims 1 to 3 is any
Carry out the wet-etching technology of wafer, it is characterised in that: include the following steps,
1) the Teflon fixture for being used for semiconductor microactuator nano parts wet processing is placed in beaker, successively with ethyl alcohol and acetone ultrasound
Cleaning；
2) wafer for having carried out ultraviolet photolithographic is placed in card slot and is fastened wafer clamp by first clamping plate and second clamping plate
It is fixed；
3) wafer is placed in the beaker equipped with etching liquid the time required to being persistently dipped to, handle is controlled in soaking process makes it
It shakes up and down, comes into full contact with wafer with etching liquid, wafer is placed in beaker after immersion and with deionized water water flow
Wafer is rinsed, etching liquid and deionized water are poured into returnable bottle after flushing；
4) wafer is taken out, wafer is transferred in baking oven or is dried in thermal station, drying temperature remains 135-180 °C.
8. a kind of Teflon fixture for semiconductor microactuator nano parts wet processing utilized as described in claims 1 to 3 is any
Developed, rinse, the wet processing to remove photoresist, it is characterised in that: include the following steps,
1) it is ready to carry out the semiconductor microactuator nano parts sample of ultraviolet photolithographic processing；
2) will be used to develop and the beaker of rinse and be used for the Teflon fixture of semiconductor microactuator nano parts wet processing using go from
Sub- water cleans in Vltrasonic device, then will inject appropriate developer solution in the beaker for being used to develop；
3) sample for having carried out ultraviolet photolithographic is placed in card slot and passes through first clamping plate and second clamping plate for photo mask board
It is fixedly clamped, sample is placed in the beaker of development the time required to being persistently dipped to, handle is controlled in soaking process to be made thereon
Lower double swerve, comes into full contact with sample with developer solution, and swing handle suitably dries sample after immersion, then falls developer solution
Enter returnable bottle；
4) it transfers the sample into the beaker for rinse, and injects appropriate rinse liquid, the time required to being persistently dipped to, impregnating
Control handle makes its upper and lower double swerve in the process, comes into full contact with sample with rinse liquid, swing handle fits sample after immersion
Work as drying, rinse liquid is then poured into returnable bottle；
5) above-mentioned each beaker is cleaned in Vltrasonic device using deionized water；
6) will develop, the drying of the sample of rinse；
7) the clean sample surfaces of rinse are plated into one layer of metal or nonmetal film, then sample is placed in card slot and by the
Sample is fixedly clamped by one clamping plate and second clamping plate, injects into the clean beaker for removing photoresist and suitable removes glue；
8) sample is placed in the beaker to remove photoresist the time required to being persistently dipped to, handle is controlled in soaking process keeps it left up and down
Right shaking comes into full contact with sample with glue is removed, and swing handle suitably dries sample after immersion, then glue will be gone to pour into back
Receive bottle；
9) it transfers the sample into the clean beaker for rinse, and injects appropriate rinse liquid, the time required to being persistently dipped to,
Handle is controlled in soaking process makes its upper and lower double swerve, comes into full contact with sample with rinse liquid, swing handle is by sample after immersion
Product suitably dry, and rinse liquid is then poured into returnable bottle；
10) above-mentioned each beaker is cleaned in Vltrasonic device using deionized water；
11) it will remove photoresist and dried with the sample of rinse.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610336237.6A CN106024693B (en) | 2016-05-20 | 2016-05-20 | Teflon fixture and its application for semiconductor microactuator nano parts wet processing |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610336237.6A CN106024693B (en) | 2016-05-20 | 2016-05-20 | Teflon fixture and its application for semiconductor microactuator nano parts wet processing |
Publications (2)
| Publication Number | Publication Date |
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| CN106024693A CN106024693A (en) | 2016-10-12 |
| CN106024693B true CN106024693B (en) | 2019-06-25 |
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| CN201610336237.6A Expired - Fee Related CN106024693B (en) | 2016-05-20 | 2016-05-20 | Teflon fixture and its application for semiconductor microactuator nano parts wet processing |
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| CN (1) | CN106024693B (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110648957A (en) * | 2019-09-26 | 2020-01-03 | 上海科技大学 | Wafer clamp and using method |
| CN112856958B (en) * | 2021-01-19 | 2022-05-06 | 河北建滔能源发展有限公司 | Preparation method of catalyst |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101661875A (en) * | 2006-12-15 | 2010-03-03 | 中芯国际集成电路制造(上海)有限公司 | Equipment for de-encapsulation of BGA encapsulation |
| CN102950133A (en) * | 2011-08-19 | 2013-03-06 | 汕头华汕电子器件有限公司 | Cleaning fixture for TO-220 type packaged products of semiconductor triodes |
| TW201403746A (en) * | 2012-07-05 | 2014-01-16 | Min Kuan Technology Co | Photomask holder |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20030059640A (en) * | 2002-01-03 | 2003-07-10 | 삼성전자주식회사 | Manual tweezer |
| JP5153307B2 (en) * | 2007-11-28 | 2013-02-27 | ルネサスエレクトロニクス株式会社 | Clamp ring for wafer and method for manufacturing semiconductor device |
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2016
- 2016-05-20 CN CN201610336237.6A patent/CN106024693B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101661875A (en) * | 2006-12-15 | 2010-03-03 | 中芯国际集成电路制造(上海)有限公司 | Equipment for de-encapsulation of BGA encapsulation |
| CN102950133A (en) * | 2011-08-19 | 2013-03-06 | 汕头华汕电子器件有限公司 | Cleaning fixture for TO-220 type packaged products of semiconductor triodes |
| TW201403746A (en) * | 2012-07-05 | 2014-01-16 | Min Kuan Technology Co | Photomask holder |
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