CN106328557A - New device for drying sample during micro nano device making process - Google Patents
New device for drying sample during micro nano device making process Download PDFInfo
- Publication number
- CN106328557A CN106328557A CN201510334591.0A CN201510334591A CN106328557A CN 106328557 A CN106328557 A CN 106328557A CN 201510334591 A CN201510334591 A CN 201510334591A CN 106328557 A CN106328557 A CN 106328557A
- Authority
- CN
- China
- Prior art keywords
- teflon
- substrate
- micro
- sample
- manufacturing process
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Sampling And Sample Adjustment (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The invention relates to a new device for drying a sample during a micro nano device making process. The new device is characterized by comprising a Teflon device for drying; the Teflon device is internally provided with a groove, and the edge is provided with tooth-shaped disc-shaped Teflon. The whole set of Teflon device and the whole set of process are simple and convenient in operation, low in price, practical and is applicable to samples of various sizes and various types.
Description
Technical field
Patent of the present invention relates to a whole set of sample treatment Teflon device, in particular, relates to a whole set of and uses
The new equipment that sample dries in micro-nano device manufacturing process.
Background technology
Currently, monocrystal silicon, carborundum, oxide layer substrate, glass substrate and the micro Process system of ceramic substrate
Making in technique, all foreign mediums contacted with substrate are all the possible sources of impurity on substrate.This mainly wraps
Include the following aspects: pollution that substrate pollution during machine-shaping, environmental pollution, water cause,
The dirt that pollution that pollution that pollution that reagent brings, industrial gases cause, technique itself cause, human body cause
Dye etc..During semiconductor device produces, substrate must clean through strict, and otherwise its micropollution speckled with also can
Cause component failure.The purpose cleaned is to remove the pollution impurity of substrate surface, including metal, Organic substance
With inorganic matter etc..These impurity with the presence of with state of atom or ionic condition, have in the form of a film or
Particle shape formula is present in substrate surface.The making of micro-nano device is to clean and to obtain clean substrate as starting point
, base-plate cleaning is most important most frequent step during semiconductor device manufactures, and its efficiency is by direct shadow
Ring to the yield rate of device, Performance And Reliability, this just high efficiency and reliability to cleaning propose
The highest requirement.
Summary of the invention
The technical problem to be solved in the present invention is, each in the above-mentioned basic course of processing of prior art
Plant and pollute defect, it is provided that the acquisition cleaning sample of a kind of high efficient and reliable, thus shorten the use in element manufacturing cycle
The new equipment that sample dries in micro-nano device manufacturing process.
The technical solution adopted for the present invention to solve the technical problems is: structure one makes for micro-nano device
During sample dry new equipment, including for dry Teflon device, inside described Teflon device
Being provided with groove, edge is provided with the disc Teflon of dentation.
By such scheme, described Teflon device top is the Teflon object stage in hollow out toothed edge, under
Portion is DC-35L-1004 type motor, and parameter is 230V, 50Hz.
By such scheme, it is threaded connection between described patch floating object stage and motor.
By such scheme, described Teflon device rotary speed facilitates adjustable.
Implement the new equipment that the sample in micro-nano device manufacturing process of the present invention dries, have following useful
Effect:
1, patent of the present invention have employed flexible dismountable Teflon object stage and motor, can be very easily
Control sample；
2, the applicable sample with various sizes, whole process more high efficient and reliable；
3, use convenient, strong operability, lay a good foundation for follow-up element manufacturing.
Accompanying drawing explanation
Below in conjunction with drawings and Examples, the invention will be further described, in accompanying drawing:
Fig. 1 is that the Teflon in the present invention new equipment that sample dries in micro-nano device manufacturing process carries
The top view of thing platform；
Fig. 2 be the present invention in micro-nano device manufacturing process sample dry new equipment in Teflon
The removable motor pictorial diagram structural representation of device；
Fig. 3 be the present invention in micro-nano device manufacturing process sample dry new equipment in Teflon
Pictorial diagram after the assembling of device.
Detailed description of the invention
In order to be more clearly understood from the technical characteristic of the present invention, purpose and effect, now comparison accompanying drawing is detailed
Describe the detailed description of the invention of the bright present invention in detail.
A kind of new equipment that sample dries in micro-nano device manufacturing process, including the Teflon for drying
Device, described Teflon device is internally provided with groove, and edge is provided with the disc Teflon of dentation, ferrum
Fluorine dragon device top is the Teflon object stage in hollow out toothed edge, and bottom is DC-35L-1004 type horse
Reaching, parameter is 230V, 50Hz；It is threaded connection between patch floating object stage and motor；Teflon
Device rotary speed facilitates adjustable.
As shown in Figure 1-Figure 3, the new clothes dried at the sample in micro-nano device manufacturing process of the present invention
The Shi Lizhong put,
1) silicon chip purchased is cut into the square of length of side 2cm × 2cm；
2) silicon chip is carried out operation；
3) silicon chip after ultrasonic cleaning in deionized water is lain in the Teflon device for drying, utilize
Substrate is dried (can assemble) with micro-machine by the spin of Teflon device.The toothed edge of hollow out, both may be used
To block the edge of substrate, to prevent substrate to be thrown out of at high speed, the liquid that can will remain on substrate again
Body throws away and makes substrate be not smeared with liquid so that ensuing drying operation.
Instantiation, but the claim of patent of the present invention is not limited in any way, such as carborundum clear
Wash and dry:
Example 1, step is as follows:
1) carborundum purchased is cut into the square of length of side 2cm × 2cm；
2) silicon carbide substrate is carried out operation；
3) silicon carbide substrate after ultrasonic cleaning in deionized water is lain in the Teflon device for drying
On, utilize the spin of Teflon device to be dried by substrate.The toothed edge of hollow out, both can block substrate
Edge, to prevent substrate to be thrown out of at high speed, can throw away the liquid remained on substrate and make base again
Plate is not smeared with liquid so that ensuing drying operation.
Example 2, step is as follows:
1) the oxide layer silicon substrate purchased is cut into the square of length of side 1.5cm × 2cm；
2) silicon chip is carried out operation；
3) silicon chip after ultrasonic cleaning in deionized water is lain in the Teflon device for drying, utilize
Substrate is dried (can assemble) with micro-machine by the spin of Teflon device.The toothed edge of hollow out, both may be used
To block the edge of substrate, to prevent substrate to be thrown out of at high speed, the liquid that can will remain on substrate again
Body throws away and makes substrate be not smeared with liquid so that ensuing drying operation.
Example 3, step is as follows:
1) ceramic substrate purchased is cut into the square of length of side 1.5cm × 1.5cm；
2) ceramic substrate is carried out operation；
3) ceramic substrate after cleaning lies in the Teflon device for drying, and utilizes Teflon device
Spin and substrate is dried.The toothed edge of hollow out, both can block the edge of substrate, to prevent substrate at height
It is thrown out of under rotating speed, the liquid remained can be thrown away and make substrate be not smeared with liquid so that connecing again on substrate
The drying operation got off.
Example 4, step is as follows:
1) sample having been carried out ultraviolet photolithographic of 2cm × 2cm, the photoresist used is PR19000A,
Thickness is 10m, and photolithographic dose is 400mJ/cm2；
2) in Vltrasonic device, 4 are cleaned by being used for sample development beaker and other device deionized waters with rinse
Time, then the sample having been carried out ultraviolet photolithographic is loaded in Teflon device, it is placed in this beaker；
3) in the beaker for development, inject appropriate RD 6 developer solution (developer solution do not had substrate a little), continue
Soaking 50 seconds, the shadoof that can control this Teflon device in immersion process can make device rock up and down,
Thus sample can be made to be fully contacted with reagent, then pour developer solution into returnable bottle；
4) in the beaker of rinse, injecting appropriate amount of deionized water, persistently soaking 30 seconds, can in immersion process
The shadoof controlling this Teflon device can make device rock up and down, thus sample can be made to fill with deionized water
Tap is touched, and then pours deionized water into returnable bottle；
5) above-mentioned each beaker deionized water is cleaned 4 times in Vltrasonic device；
6) sample is lain in the Teflon device for drying, utilize the spin of Teflon device to be got rid of by sample
Dry.The toothed edge of hollow out, both can block the edge of substrate, to prevent substrate to be thrown out of at high speed,
The liquid remained on substrate can be thrown away again and make substrate be not smeared with liquid so that ensuing drying is grasped
Make.
Above in conjunction with accompanying drawing, embodiments of the invention are described, but the invention is not limited in above-mentioned
Detailed description of the invention, above-mentioned detailed description of the invention is only schematic rather than restrictive, this
The those of ordinary skill in field, under the enlightenment of the present invention, is being protected without departing from present inventive concept and claim
Under the ambit protected, it may also be made that a lot of form, within these belong to the protection of the present invention.
Claims (4)
1. the new equipment that sample dries in micro-nano device manufacturing process, it is characterised in that include
For the Teflon device dried, described Teflon device is internally provided with groove, and edge is provided with dentation
Disc Teflon.
The new equipment that sample dries in micro-nano device manufacturing process the most according to claim 1,
It is characterized in that, described Teflon device top is the Teflon object stage in hollow out toothed edge, and bottom is
DC-35L-1004 type motor, parameter is 230V, 50Hz.
The new equipment that sample dries in micro-nano device manufacturing process the most according to claim 2,
It is characterized in that, be threaded connection between described patch floating object stage and motor.
The new equipment that sample dries in micro-nano device manufacturing process the most according to claim 2,
It is characterized in that, described Teflon device rotary speed facilitates adjustable.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510334591.0A CN106328557B (en) | 2015-06-16 | 2015-06-16 | Novel device for spin-drying sample in micro-nano device manufacturing process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510334591.0A CN106328557B (en) | 2015-06-16 | 2015-06-16 | Novel device for spin-drying sample in micro-nano device manufacturing process |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106328557A true CN106328557A (en) | 2017-01-11 |
| CN106328557B CN106328557B (en) | 2020-04-21 |
Family
ID=57732920
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510334591.0A Expired - Fee Related CN106328557B (en) | 2015-06-16 | 2015-06-16 | Novel device for spin-drying sample in micro-nano device manufacturing process |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106328557B (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103008309A (en) * | 2011-09-23 | 2013-04-03 | 南亚科技股份有限公司 | Wafer scrubber and wafer scrub method |
| CN203170629U (en) * | 2013-04-09 | 2013-09-04 | 湖南省康普通信技术有限责任公司 | Optical branching device chip clamp |
| CN104752282A (en) * | 2015-02-27 | 2015-07-01 | 武汉理工大学 | Sample processing device and process used for manufacturing micro-nano device |
-
2015
- 2015-06-16 CN CN201510334591.0A patent/CN106328557B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103008309A (en) * | 2011-09-23 | 2013-04-03 | 南亚科技股份有限公司 | Wafer scrubber and wafer scrub method |
| CN203170629U (en) * | 2013-04-09 | 2013-09-04 | 湖南省康普通信技术有限责任公司 | Optical branching device chip clamp |
| CN104752282A (en) * | 2015-02-27 | 2015-07-01 | 武汉理工大学 | Sample processing device and process used for manufacturing micro-nano device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106328557B (en) | 2020-04-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103342356B (en) | Method for transferring graphene on metal foil substrate | |
| CN102310065B (en) | Post polish disk cleaning process | |
| CN104752282B (en) | A kind of sample processing device and treatment process for micro-nano device making | |
| JP2004282035A5 (en) | ||
| CN103639149A (en) | Method for cleaning wafer | |
| CN102496590B (en) | Isopropyl alcohol dryer with ultrasonic or megasonic vibrators | |
| CN103755156A (en) | Preparation method of self-healing thin film of hollow multi-layered nano capsule based on layer by layer assembly | |
| CN207719161U (en) | A kind of fast overflowing stream rinse bath | |
| JP2006270032A5 (en) | ||
| CN106328557A (en) | New device for drying sample during micro nano device making process | |
| CN108597987A (en) | The cleaning method of semiconductor crystal wafer | |
| CN206541809U (en) | A kind of silicon chip cleaning device | |
| CN103846250A (en) | Filter liquid discharging device and liquid discharging method of ultrasonic washing trough | |
| CN204953432U (en) | Environment -friendly silicon chip belt cleaning device | |
| CN106024693B (en) | Teflon fixture and its application for semiconductor microactuator nano parts wet processing | |
| CN102243988B (en) | The cleaning processing chamber of semi-conductor silicon chip and the cleaning of semi-conductor silicon chip | |
| CN208513195U (en) | Single slot chip purifies cleaning device | |
| CN103230894A (en) | Cleaning process of bismuth germanate wafer | |
| CN205863147U (en) | A kind of Novel silicon slice cleans device | |
| CN207391554U (en) | A kind of automatic cleaning and the Etaching device of automatic drier | |
| CN101944476A (en) | Wafer washing method | |
| CN1402311A (en) | Method and device for cleaning chip with contact hole or interlayer hole | |
| CN208240615U (en) | The cleaning device of semiconductor crystal wafer | |
| CN205645891U (en) | QLED packaging cover plate | |
| CN207204680U (en) | A kind of novel washing stone of environmentally friendly building engineering field desilts equipment |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20200421 Termination date: 20210616 |