CN205645891U - QLED packaging cover plate - Google Patents
QLED packaging cover plate Download PDFInfo
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- CN205645891U CN205645891U CN201620332648.3U CN201620332648U CN205645891U CN 205645891 U CN205645891 U CN 205645891U CN 201620332648 U CN201620332648 U CN 201620332648U CN 205645891 U CN205645891 U CN 205645891U
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Abstract
The utility model discloses a QLED packaging cover plate, QLED packaging cover plate's upper surface is the nanometer patterning, be planar structure around the QLED packaging cover plate. The utility model discloses an upper surface to QLED packaging cover plate carries out the processing of nanometer patterning to form the nanometer patterning, and packaging cover plate still adopts planar structure all around, utilizes the utility model discloses a packaging cover plate encapsulates the QLED device, and light that the luminescent layer sent can be by drawing of furthest and collected by test instrument, has improved device efficiency greatly.
Description
Technical field
This utility model relates to QLED encapsulating structure field, particularly relates to a kind of QLED encapsulation cover plate.
Background technology
There is due to quantum dot the features such as the humorous luminescence of size adjustable, isolychn width, photoluminescence efficiency height and heat stability, therefore show and solid-state illumination light source using quantum dot as the next generation that the light emitting diode with quantum dots (QLED) of luminescent layer is great potential.Meanwhile, light emitting diode with quantum dots, because possessing the plurality of advantages such as high brightness, low-power consumption, wide colour gamut, easy processing, obtains and pays close attention in illumination and display field widely and study in recent years.
Owing to the organic material water absorption in QLED device is relatively strong, it is easily aoxidized by oxygen in air simultaneously, in order to improve the life-span of QLED device, is typically packaged it with water proof trapping.As it is shown in figure 1, prepare QLED device 2 on substrate 1, QLED device 2 uses encapsulation cover plate 3 to encapsulate, and encapsulation cover plate 3 generally two-sided planar structure therein, surrounding is also planar structure.Simultaneously because QLED device generally prepares using the glass of plane or flexible base board as carrier, belong to a kind of area source.And the refractive index of each layer and encapsulation cover plate and air refraction there are differences in device, this causes the light extraction efficiency of QLED device to be typically only about 20-25%, significantly limit the performance of QLED device.
Therefore, prior art has yet to be improved and developed.
Utility model content
In view of above-mentioned the deficiencies in the prior art, the purpose of this utility model is to provide a kind of QLED encapsulation cover plate, it is intended to solve the problem that existing QLED light extraction efficiency is low.
The technical solution of the utility model is as follows:
A kind of QLED encapsulation cover plate, wherein, the upper surface of described QLED encapsulation cover plate is nano-pattern structure, and the surrounding of described QLED encapsulation cover plate is planar structure.
Described QLED encapsulation cover plate, wherein, described nano-pattern structure includes multiple nano unit spaced apart.
Described QLED encapsulation cover plate, wherein, described nano unit is nanocone structures, nano-pillar structure, nanometer frustum structure or nanometer peak structure.
Described QLED encapsulation cover plate, wherein, a width of 100 ~ 1000nm of described nano unit.
Described QLED encapsulation cover plate, wherein, the degree of depth of described nano unit is 10 ~ 1000nm.
Described QLED encapsulation cover plate, wherein, the spacing of described nano unit is 200 ~ 800nm.
Described QLED encapsulation cover plate, wherein, the material of described QLED encapsulation cover plate is glass, sapphire, carborundum or organic transparent body.
Beneficial effect: this utility model is by carrying out nano-patterning process to the upper surface of QLED encapsulation cover plate, thus form nano-pattern structure, and encapsulation cover plate surrounding still uses planar structure, utilize encapsulation cover plate of the present utility model that QLED device is packaged, the light that luminescent layer sends can be extracted to greatest extent and tested instrument is collected, and substantially increases device efficiency.
Accompanying drawing explanation
Fig. 1 is to use the structural representation of QLED encapsulation cover plate encapsulation QLED in prior art.
Fig. 2 is the structural representation using this utility model a kind of QLED encapsulation cover plate first embodiment encapsulation QLED.
Fig. 3 is the structural representation using this utility model a kind of QLED encapsulation cover plate the second embodiment encapsulation QLED.
Fig. 4 is the structural representation using this utility model a kind of QLED encapsulation cover plate the 3rd embodiment encapsulation QLED.
Fig. 5 is the structural representation using this utility model a kind of QLED encapsulation cover plate the 4th embodiment encapsulation QLED.
Detailed description of the invention
This utility model provides a kind of QLED encapsulation cover plate, surface treatment method and application, for making the purpose of this utility model, technical scheme and effect clearer, clear and definite, further describes this utility model below.Should be appreciated that specific embodiment described herein, only in order to explain this utility model, is not used to limit this utility model.
Referring to Fig. 2, it is the structural representation using this utility model a kind of QLED encapsulation cover plate first embodiment encapsulation QLED, as it can be seen, it is to prepare QLED device 20 on the substrate 10, and uses encapsulation cover plate 30 to encapsulate described QLED device 20.The upper surface of described encapsulation cover plate 30 is nano-pattern structure, and the surrounding of described encapsulation cover plate 30 is planar structure.
Encapsulation cover plate 30 of the present utility model, it can effectively avoid total reflection problem that is different from air refraction due to encapsulation cover plate 30 and that cause so that the maximum amount of tested instrument collection by encapsulation cover plate 30 of light.Simultaneously, planar structure is still used for encapsulation cover plate 30 surrounding, this is owing to encapsulation cover plate 30 is bigger with the refractive index of air, total reflection phenomenon easily occurs, and reflex to the light of encapsulation cover plate 30 surrounding, and can the maximum amount of be reflected back in encapsulation groove, eventually passing multiple reflections is penetrated by encapsulation cover plate 30 front, and tested instrument collects, improve testing efficiency.It is to say, use encapsulation cover plate 30 structure of the present utility model, it is possible to effectively improve light extraction efficiency so that more light from the injection of encapsulation cover plate 30 front, collect by tested instrument.
Described nano-pattern structure includes multiple nano unit spaced apart.These nano units are evenly distributed on the upper surface of encapsulation cover plate 30, and the light making QLED luminescent layer send by these nano units is the maximum amount of from encapsulation cover plate 30 upper surface outgoing, without being reflected back toward in encapsulation groove.
Described nano unit can be nanocone structures as shown in Figure 2, and it is shaped as conical structure；Or nano-pillar structure as shown in Figure 3, it is cylindrically shaped；Or nanometer frustum structure as shown in Figure 4, it is shaped as frustum structure；Or nanometer peak structure as shown in Figure 5, it is shaped as waveform configuration.These structures can effectively reduce the light loss at encapsulated layer, thus more effectively extracts light, improves device performance.
Further, the wide of described nano unit is preferably 100 ~ 1000nm, such as 500nm.The degree of depth of described nano unit is preferably 10 ~ 1000nm, such as 200nm.The spacing of described nano unit is preferably 200 ~ 800nm, such as 600nm.Nano unit is set according to above-mentioned spacing and size, can more effectively extract light, improve light extraction efficiency.
The material of described encapsulation cover plate 30 can be glass, sapphire, carborundum or organic transparent body.It will be clear that above-mentioned material is only only for example, those skilled in the art also can use other materials as required, equally in its surface configuration nano-pattern structure, it is possible to realize the purpose of this utility model.
It addition, described nano-pattern structure can use the methods such as physics, chemical meteorology deposition, wet method or dry etching to process.As a example by making nano-pillar structure on a sapphire substrate, the method that can use chemical meteorology deposition realizes, first carry out mask plate, then at MOCVD(metallo-organic compound chemical meteorology deposition) the inside deposit, heat treated to be carried out to Sapphire Substrate.The gas phase components ratio being passed through by control realizes the speed of deposition, it is ensured that deposition process forms good nanocone structures.This utility model patterning method to encapsulation cover plate 30 upper surface, its technique is simple, is suitable for large area and produces preparation.
Below by object lesson, the manufacturing process of encapsulation cover plate 30 is illustrated.
S1, at clean one layer of negative photoresist of plane sapphire substrate surface spin coating and carry out post bake process, obtaining organic film, thickness is 30-200nm, and post bakeization is processed and realized by baking, baking in atmosphere 200 DEG C carry out, baking time is 5-10 minute；
S2, organic film surface spin coating one lamination print glue, thickness is 70-300nm；
S3, the Flexible formwork assembly with some nano units is placed on impressing glue, uses ultraviolet light curing nano stamping technique to transfer to the nano unit pattern on Flexible formwork assembly imprint on glue；
S4, being exposed solidified imprinting glue the most under ultraviolet light, time of exposure is the 5-10 second；
S5, again Flexible formwork assembly is removed, so imprint on glue and define some nano units；
S6, dry etching is utilized to remove impressing glue remaining bottom nano unit, until exposing the upper surface of organic film；
S7, utilizing wet etching to remove the organic film bottom each nano unit, until exposing the upper surface of plane sapphire substrate, controlling the developing time of wet etching at 1-30 minute simultaneously；
S8, on the upper surface of the plane sapphire substrate exposed deposit metal nickel dam, the thickness of metal nickel dam is 1-50nm；The thickness of metal nickel dam is less than the thickness of organic film；
S9, developer solution is utilized to remove the organic film of plane sapphire substrate surface residual and cover impressing glue on organic film upper surface, developing time is 5min-30min, has obtained some metallic nickel unit with nano-pattern structure on plane sapphire substrate surface；
S10, using some metallic nickel unit with nano-pattern structure as mask, use dry etching that plane sapphire substrate is performed etching；
S11, being finally peeled away some metallic nickel unit, the surface of plane sapphire substrate defines some spaced nano units, i.e. obtains the encapsulation cover plate of nano-patterning.
For the preparation method of QLED, its main flow is as follows:
First, being placed in order by ito substrate in acetone, washing liquid, deionized water and isopropanol and carry out ultrasonic cleaning, ultrasonic being both needed to of each of the above step continues about 15 minutes.After ultrasonic completing, ITO is positioned over dry for standby in cleaning oven.
After ito substrate is dried, process (Plasma with oxygen gas plasma
Treatment) ITO surface 5 minutes is to process the Organic substance of ITO surface attachment further and to improve the work function of ITO, and this process may be used without UV-ozone and processes (UV-Ozone
Treatment) complete.
Then, the ito substrate that step processes in process depositing one layer of hole injection layer, the thickness of this layer is 0-100nm, preferably 40-50nm, it carries out heat treatment, imprinting moulding and heat cure successively and processes, prepare light removing layer, namely hole transmission layer.
After the ito substrate cooling that previous step processes, quantum dot light emitting being deposited upon hole transmission layer surface, its thickness is between 10-100nm.Ito substrate is placed on the warm table of 80 DEG C heating 10 minutes after completing by the deposition of this step, removes the solvent of residual.
Subsequently, it is sequentially depositing electron transfer layer and electron injecting layer on quantum dot light emitting layer surface, wherein electron transfer layer preferably has the N-shaped zinc oxide of high electronic transmission performance, its preferably thickness is 30-60nm, the metals such as electron injecting layer material can select the Ca of low work function, Ba, CsF can also be selected, the compounds such as LiF, CsCO3, it is also possible to be other Electrolyte type electron transport layer materials.
Finally, the ito substrate having deposited each functional layer is placed in evaporation storehouse the argent by mask plate heat one layer of 100nm of evaporation or aluminum has been prepared as negative electrode, device.
After prepared by device, the above-mentioned encapsulation cover plate through nano-patterning is encapsulated on device, can test after UV solidification.Through test, the QLED device encapsulated through encapsulation cover plate of the present utility model is about 1.3 times of conventional encapsulating structure light extraction efficiency.
In sum, this utility model is by carrying out nano-patterning process to the upper surface of QLED encapsulation cover plate, thus form nanostructured, and encapsulation cover plate surrounding still uses the mode of planarization to be packaged device, the light that so QLED luminescent layer sends can be extracted to greatest extent and tested instrument is collected, and substantially increases device efficiency.
Should be understood that; application of the present utility model is not limited to above-mentioned citing; for those of ordinary skills, can be improved according to the above description or convert, all these modifications and variations all should belong to the protection domain of this utility model claims.
Claims (7)
1. a QLED encapsulation cover plate, it is characterised in that the upper surface of described QLED encapsulation cover plate is nano-pattern structure, the surrounding of described QLED encapsulation cover plate is planar structure.
QLED encapsulation cover plate the most according to claim 1, it is characterised in that described nano-pattern structure includes multiple nano unit spaced apart.
QLED encapsulation cover plate the most according to claim 2, it is characterised in that described nano unit is nanocone structures, nano-pillar structure, nanometer frustum structure or nanometer peak structure.
QLED encapsulation cover plate the most according to claim 2, it is characterised in that a width of 100 ~ 1000nm of described nano unit.
QLED encapsulation cover plate the most according to claim 2, it is characterised in that the degree of depth of described nano unit is 10 ~ 1000nm.
QLED encapsulation cover plate the most according to claim 2, it is characterised in that the spacing of described nano unit is 200 ~ 800nm.
QLED encapsulation cover plate the most according to claim 1, it is characterised in that the material of described QLED encapsulation cover plate is glass, sapphire, carborundum or organic transparent body.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620332648.3U CN205645891U (en) | 2016-04-20 | 2016-04-20 | QLED packaging cover plate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620332648.3U CN205645891U (en) | 2016-04-20 | 2016-04-20 | QLED packaging cover plate |
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| CN205645891U true CN205645891U (en) | 2016-10-12 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109473529A (en) * | 2018-09-28 | 2019-03-15 | 华中科技大学鄂州工业技术研究院 | Nano array structure film, preparation method and LED component |
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2016
- 2016-04-20 CN CN201620332648.3U patent/CN205645891U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109473529A (en) * | 2018-09-28 | 2019-03-15 | 华中科技大学鄂州工业技术研究院 | Nano array structure film, preparation method and LED component |
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