TW201802864A - Method and apparatus for cleaning and drying integrated circuit substrate comprising a chuck, a driving unit, a solid plate, a first nozzle, a second nozzle, and a movable arm - Google Patents

Abstract

This invention discloses a method and an apparatus for cleaning and drying an integrated circuit substrate. The apparatus comprises a chuck for placing and supporting the substrate; a driving unit connected with the chuck for driving the chuck to rotate; a solid plate positioned above the substrate; a first nozzle disposed on the solid plate for spraying a cleaning fluid onto the surface of the substrate; a second nozzle disposed on the solid plate for spraying low-tension fluid onto the surface of the substrate; and a movable arm disposed above the substrate for supplying dry gas to the surface of the substrate.

Description

Method and device for cleaning and drying integrated circuit substrate

The present invention relates to the field of semiconductor device manufacturing, and in particular, to a method and device for cleaning and drying integrated circuit substrates after cleaning the substrate with a chemical liquid.

During the processing of semiconductor substrates, it is very important to avoid fine particles and other pollutants from contacting the substrate surface, because particles and pollutants will cause low yield and short life of the device, so it is performed after the process steps that generate particles or pollutants The cleaning process is crucial. Today, the cleaning method is mainly wet cleaning, a group of substrates are cleaned simultaneously (tank cleaning) or each substrate is cleaned separately (single-chip cleaning). Due to various reasons, such as process flexibility, cost-effectiveness, and waste liquid management, single-chip wet cleaning machines have been greatly welcomed in the field of integrated circuit manufacturing in recent years. In a single-chip wet cleaning machine, the substrate is subjected to a series of treatments with different process chemicals. The final steps of the process are cleaning and drying. Since drying is the last step in the cleaning process, it is very important for the entire cleaning process.

Spin-wash-dry is a common cleaning method for single-chip wet cleaning machines. In this method, after the chemical liquid treatment, most of the cleaning liquid is thrown off the substrate by the centrifugal force. However, due to the cleaning The liquid film becomes thinner and reaches a point where the viscous resistance of the cleaning liquid film is greater than the centrifugal force, and the centrifugal force is no longer effective in removing the cleaning liquid. Finally, the cleaning liquid is removed by natural or forced evaporation. A small amount of non-volatile pollutants and fine particles exist in the thinned cleaning solution. After the cleaning process is completed, these pollutants and fine particles are combined and left on the substrate. According to the chemical homogeneity of the substrate, these non-volatile pollutants and fine particles can cause many defects on the substrate. A well-known example is the watermark in the hydrophobic region of the substrate.

The development of the Maragoni dryer solves some of the above problems. The Maragoni dryer mainly uses the surface tension gradient force to pull the cleaning liquid film away from the substrate. During the drying process, a small residual cleaning liquid film is left on the substrate surface. A method for drying a substrate is disclosed with reference to U.S. Patent No. 6,405,452. In this method, a substrate is first immersed in deionized water in a container, and then a mixture of ethanol vapor and an inert gas is passed into a container not filled with deionized water. Then, the substrate leaves the deionized water and enters the upper part of the container, thereby removing the deionized water molecules on the surface of the substrate. The liquid movement introduced by the Maragoni drying method works only in the presence of surface tension gradients, and does not guarantee that no particles and contaminants will reattach to the substrate surface elsewhere. Once reattached, the particles and contaminants will be difficult to remove. In order to better remove particles and contaminants, an effective method is needed to prevent particles and contaminants from re-adhering to the substrate surface.

According to one aspect of the present invention, a method for cleaning and A method for drying an integrated circuit substrate includes: rotating the substrate at a first speed and moving the solid plate to bring the solid plate closer to the substrate, with a gap between the bottom surface of the solid plate and the upper surface of the substrate; and spraying a cleaning solution on the upper surface of the substrate to form The cleaning liquid film covers the entire upper surface of the substrate; lower the solid plate and make the solid plate substantially parallel to the upper surface of the substrate. At least one area of the solid plate covers the center area of the substrate, and the liquid bridge is limited to the solid plate Between the bottom surface of the substrate and the upper surface of the substrate; rotating the substrate at a second speed and spraying a low tension liquid onto the upper surface of the substrate; moving the solid plate from the center region of the substrate to the edge of the substrate. During the movement, the solid plate was roughly Parallel to the upper surface of the substrate, the movable arm is moved to a position above the substrate to supply a dry gas to the upper surface of the substrate.

According to another aspect of the present invention, a device for cleaning and drying an integrated circuit substrate is provided, including: a chuck for placing and supporting the substrate; a driving unit connected to the chuck for driving the rotation of the chuck; A solid plate; a first nozzle provided on the solid plate for spraying a cleaning liquid onto the surface of the substrate; a second nozzle provided on the solid plate for spraying a low tension liquid on the substrate surface; located above the substrate for supplying drying to the substrate surface Gas movable arm.

101‧‧‧Solid board

102‧‧‧ Mobile arm

103‧‧‧chuck

104‧‧‧ substrate

105‧‧‧Drive unit

106‧‧‧Second Nozzle

107‧‧‧first nozzle

108‧‧‧ water film

201‧‧‧Solid board

204‧‧‧ substrate

301‧‧‧Solid board

304‧‧‧ substrate

309‧‧‧ laminar

401‧‧‧Solid board

404‧‧‧ substrate

410‧‧‧ particles

501‧‧‧Solid board

502‧‧‧ movable arm

503‧‧‧chuck

504‧‧‧ substrate

505‧‧‧Drive unit

506‧‧‧Second Nozzle

507‧‧‧first nozzle

511‧‧‧Temperature control device

601‧‧‧Solid board

602‧‧‧ movable arm

603‧‧‧chuck

604‧‧‧ substrate

605‧‧‧Drive unit

606‧‧‧second nozzle

607‧‧‧first nozzle

701‧‧‧Solid board

704‧‧‧ substrate

706‧‧‧Second Nozzle

707‧‧‧first nozzle

In order to make the present invention more comprehensible to those skilled in the art, specific embodiments of the present invention are described in detail below with reference to the accompanying drawings, in which: 1A illustrates a specific embodiment of a device for cleaning and drying integrated circuit substrates; FIG. 1B is a top view of the device shown in FIG. 1A; and FIGS. 2A-2G describe a specific embodiment of a cleaning and drying process of the integrated circuit substrate Figures 3A-3C describe the principle of cleaning and drying of integrated circuit substrates; Figure 4 describes the principle of cleaning and drying of integrated circuit substrates; Figures 5A-5B describe the principle of cleaning and drying of integrated circuit substrates; Figures 6A- 6D describes the principle of cleaning and drying the integrated circuit substrate; Figs. 7A-7C describe the principle of cleaning and drying the integrated circuit substrate; Fig. 8 describes the principle of cleaning and drying of the integrated circuit substrate; FIG. 10A depicts another embodiment of the device for cleaning and drying an integrated circuit substrate; FIG. 10B is a top view of FIG. 10A; FIG. 11A-11B describes Another specific embodiment of the apparatus for cleaning and drying integrated circuit substrates is shown; FIGS. 12A-12F illustrate various shapes of a solid board.

Hereinafter, various embodiments of the present invention will be described in detail with reference to the accompanying drawings.

As shown in Figures 1A-1B A specific embodiment of a device for drying and drying an integrated circuit board. The device includes a chuck 103 for placing and supporting the substrate 104. The chuck 103 is connected to a driving unit 105. The driving unit 105 may be, for example, a motor. The driving unit 105 drives the chuck 103 to rotate, and the substrate 104 rotates with the chuck 103. The driving unit 105 can drive the chuck 103 to rotate in a clockwise direction, a counterclockwise direction, or clockwise and counterclockwise alternately. The solid plate 101 is located above the substrate 104. The bottom surface of the solid plate 101 may be made of any one of the following materials: sapphire glass, quartz, stainless steel, or anodized aluminum. The bottom surface of the solid plate 101 may also be made of any one of the following wettable ceramic materials: aluminum oxide or silicon dioxide. The bottom surface of the solid plate 101 can also be made of any one of the following inert metal or metal alloy coatings: platinum, gold, titanium, or titanium carbide. The bottom surface of the solid plate 101 may also be made of any of the following wettable modified plastics: PTFE, PVDF, or PEEK.

The first nozzle 107 is provided at an end of the solid plate 101 to spray a cleaning liquid onto the surface of the substrate 104. The cleaning solution is deionized water or deionized water containing ozone. The second nozzle 106 is disposed at the end of the solid plate 101 and is adjacent to the first nozzle 107. The second nozzle 106 is closer to the end of the solid plate 101 than the first nozzle 107. The second nozzle 106 is used to spray the surface of the substrate 104 low. Tension liquid. The low-tension liquid can be any of the following: ethanol, IPA, acetone, ethyl acetate, or the vapor form of ethanol, IPA, acetone, and ethyl acetate. Preferably, the low-tension liquid is IPA liquid or IPA vapor. The movable arm 102 is located above the substrate 104 and is opposite to the end of the solid plate 101 to supply a dry gas to the surface of the substrate 104. The dry gas may be any of the following: air, nitrogen, or argon, preferably nitrogen.

According to this embodiment, the present invention also provides cleaning and drying process steps, in which deionized water, IPA, and nitrogen are sprayed onto the surface of the substrate 104 and combined with the application of the solid plate 101, particles and other pollutants will be effectively removed And can prevent the introduction of particles to the surface of the substrate 104 and the device itself. The operation steps using the solid plate 101 can be set as follows:

Step 1: Rotate the substrate 104 at a first rotation speed ω, the range of ω is 10-50 rpm, move the solid plate 101 so that the solid plate 101 is close to the substrate 104, and there is a gap between the bottom surface of the solid plate 101 and the upper surface of the substrate 104.

Step 2: Use the first nozzle 107 to spray deionized water on the upper surface of the substrate 104 to form a water film 108. The water film 108 covers the entire upper surface of the substrate 104. The thickness of the water film 108 is about 3 mm. FIG. 2A shows step 2 Example.

Step 2 is a deionized water cleaning step. In this step, since the substrate 104 is rotated at a relatively low speed, the water film 108 is a continuous water film and covers the entire upper surface of the substrate 104.

Step 3: The solid plate 101 is lowered. The bottom surface of the solid plate 101 is substantially parallel to the upper surface of the substrate 104. “Substantially parallel” here means that the bottom surface of the solid plate 101 is parallel to or approximately parallel to the upper surface of the substrate 104. The solid plate 101 is next to the substrate 104 so as to form a liquid bridge between the bottom surface of the solid plate 101 and the upper surface of the substrate 104. Due to the capillary phenomenon, the liquid bridge is restricted between the bottom surface of the solid plate 101 and the upper surface of the substrate 104. At least one region on the solid plate 101 covers the central region of the substrate 104, and the central region includes the center of the substrate 104 and a region near the center.

Step 4: Rotate the substrate 104 at a second rotation speed of about 300 rpm and The upper surface of the substrate 104 is sprayed with IPA for one second, and the IPA is sprayed onto the upper surface of the substrate 104 through the second nozzle 106. FIG. 2B shows an example of step 4. As the substrate 104 continues to rotate, the path of the IPA sprayed onto the upper surface of the substrate 104 is spiral, as shown in FIG. 2C. In this step, when the IPA is sprayed on the upper surface of the substrate 104, the spraying of deionized water may be stopped.

Step 5: The solid plate 101 is moved from the central area of the substrate 104 to the edge of the substrate 104 at a preset speed. During the movement, the solid plate 101 is substantially parallel to the upper surface of the substrate 104. At the same time, move the movable arm 102 to a specific position above the substrate 104 to supply nitrogen to the upper surface of the substrate 104, and then start reciprocating movement between the specific position and the edge of the substrate 104. The end point of the movable arm 102 is the Edge, this process facilitates the removal of particles. The substrate 104 is continuously rotated at a second rotation speed of about 300 rpm and the upper surface of the substrate 104 is continuously sprayed with IPA. Figure 2D shows an example of step 5. FIG. 2E shows the spiral motion trajectory of the IPA on the upper surface of the substrate 104.

As shown in FIG. 2F, in step 5, preferably, when the solid plate 101 is about to leave the substrate 104, the movable arm 102 is moved to the center of the substrate 104, and then the center-to-edge reciprocating motion of the substrate 104 is started, and the movable arm 102 The end of the movement is at the edge of the substrate 104.

As shown in FIG. 2G, in step 5, preferably, when the solid plate 101 leaves the substrate 104, the movable arm 102 is moved to the center of the substrate 104 to supply nitrogen, and then the center-to-edge reciprocating motion of the substrate 104 is started to move. The end of the movement of the arm 102 is at the edge of the substrate 104.

Because the liquid bridge is confined to the bottom surface and the base plate of the solid plate 101 Between the upper surfaces of 104, a low-tension liquid with a surface tension lower than that of deionized water is introduced to the free liquid surface of the water film 108 near the end edge of the solid plate 101, and is located in the center region of the substrate 104, in the center of the substrate 104 Or form a surface tension gradient area near the center. Moving the solid plate 101 pushes the water film 108 outward, thereby breaking the continuity of the water film 108 in the central area of the substrate 104. As the solid plate 101 moves outward, drag the water film 108 below it to follow the trajectory. The water film 108 below the bottom surface of the solid plate 101 continuously contacts the low tension liquid sprayed by the solid plate 101, which can maintain the surface tension gradient at the end edge of the solid plate 101. Presence to push the water film 108 outward. Therefore, the substrate 104 can be dried without water marks, and particles and pollutants are removed together with the water film 108, and will not be adsorbed on the surface of the substrate 104 again. The reduction speed of the water film 108 directly depends on the moving speed of the solid plate 101 and the rotation speed of the substrate 104. At the end of the water film 108 removal process, nitrogen can be supplied to the substrate 104 by a separate transport device to help the volatile components remaining on the surface of the substrate 104 evaporate.

According to the cleaning and drying principles shown in Figures 3A-3C, surface tension is most important for drying performance. In a commonly used Maragoni dryer, particles and water films are removed by pulling the substrate from water covered with an IPA layer. At 20 ° C, the surface tension of IPA was 21.3 mN / m, and the surface tension of deionized water was 72.7 mN / m. Because a liquid with a high surface tension has a stronger pulling force on the surrounding liquid than a liquid with a low surface tension, the existence of a surface tension gradient will naturally cause the liquid to flow from a region with a low surface tension to a region with a high surface tension. The amount of IPA on the water surface, the temperature in the cavity, and the speed of pulling the substrate outwards all need to be precisely controlled. Due to low viscosity and low surface tension, IPA is dried There is also a market in washing machines. IPA is sprayed onto the surface of the substrate through a nozzle, then the substrate is rotated at a high speed, and the substrate is dried by centrifugal force. This method is very convenient, but for hydrophobic and hydrophilic mixed silicon substrate surfaces, during the drying process, there may be watermark problems on the surface. All existing Maragoni drying technologies have a free liquid surface during the drying process, and the method disclosed in the present invention confines the water film 108 between the bottom surface of the solid plate 101 and the upper surface of the substrate 104. Through this method, regardless of whether the substrate 104 is With a wettable surface, through the movement of the solid plate 101 and the rotation of the substrate 104, and the liquid spraying device attached to the moving solid plate 101, the continuity of the moving water film 108 can be maintained. The drag force of the solid plate 101 and the The driving force of the surface tension gradient between the two liquids causes the water film 108 to be completely pulled away from the surface of the substrate 104. The continuity of the confined water film 108 is not broken, so the dry marks of the drip are effectively avoided when removing from the surface of the substrate 104. These dry marks are usually formed in a ring shape on the hydrophobic surface, which is called a "watermark". They are known for reducing device yield in semiconductor manufacturing.

When the solid board 101 moves outward, drag the restricted water film 108 below the solid board 101 to follow the trajectory, and the water film 108 under the bottom of the solid board 101 continues to contact the low tension liquid sprayed by the solid board 101 to maintain the solid board 101 The area of the surface tension gradient at the tip edge drives the water film 108 to flow outward. The reduction speed of the water film 108 directly depends on the moving speed of the solid plate 101 and the rotation speed of the substrate 104. FIG. 3C shows an embodiment where the water film 108 under the bottom surface of the solid plate 101 is in contact with the low-tension liquid sprayed from the solid plate 101. γc is the capillary length of the water film 108 above the surface of the substrate 104 and below the solid plate 101, and can be calculated as follows:

Where γ is the surface tension, ρ is the density of the liquid, and g is the acceleration of gravity. In the drying process disclosed by the present invention, γ gradually decreases due to spraying of a low-tension liquid. When the solid plate 101 leaves the substrate 104, γc becomes smaller and smaller.

Referring to FIG. 4, FIG. 4 illustrates two attributes of the substrate. The contact angle φ is larger than 90 °, and the substrate exhibits hydrophobicity. The contact angle φ is less than 90 °, and the substrate exhibits hydrophilicity. It is difficult to remove surface particles from a hydrophobic substrate. In the semiconductor industry, the commonly used method of removing particles is to change the hydrophobicity of the substrate to hydrophilic, but during the process, a slight oxide layer will grow on the substrate. It is harmful to the electrical characteristics of the device, especially the critical dimension is reduced to 65nm and below. It is necessary and urgent to develop an integrated drying method and equipment with a controlled chemical oxide layer.

An embodiment of the basic principle of cleaning and drying the substrate 104 using the solid plate 101 is shown in FIGS. 5A-5B. As shown in FIG. 5A, through rotating the substrate 104, the deionized water film can be maintained on the surface and edges of the substrate 104. The deionized water film is very important for the next process steps, for example, to prevent high chemical concentrations in local areas, Due to the separation pressure of the liquid film at the edge of the substrate 104, FIG. 5A illustrates an unstable state. After the IPA is sprayed and the IPA diffuses to the deionized water film, a surface tension gradient will be generated in the mixed liquid. The interaction between the surface tension and the separation pressure at the edge of the substrate 104 causes the entire liquid film to be divided into two parts, as shown in FIG. 5B. Due to centrifugal force and gravity, the portion located at the edge of the substrate 104 will drip from the substrate 104, as shown in FIG. 5B The illustrated liquid film can solve the watermark problem at the edge of the substrate 104.

6A-6D show another embodiment of the basic principle of cleaning and drying the substrate 204 using the solid plate 201. FIG. 6A shows that the relationship between the contact angles φ, φ of the liquid phase on the substrate 204 and the surface characteristics of the substrate has been presented in FIG. 4. Figure 6B shows capillary forces that occur when liquid fills a tiny space between two moving parts. When the liquid contact angle φ between two moving parts is less than 90 °, there is a gravitational force between the two surfaces due to the formation of a "liquid bridge". According to the theory, the surface tension is: γ = Fmax / 2πr

Among them, Fmax is the maximum excess force, and r is the radius of the liquid.

FIG. 6C illustrates a phenomenon that may occur during the spraying of a low tension liquid on the surface of the substrate 204, which is caused by surface tension and is harmful to the drying process of the substrate 204. Fortunately, this phenomenon can be avoided by the application of the solid plate 201. As shown in FIG. 6D, it can be seen that the uniform liquid film covers the substrate 204 under the solid plate 201, and the gap d between the bottom surface of the solid plate 201 and the upper surface of the substrate 204 should be controlled to be less than r.

An embodiment of a formal theory regarding a uniform liquid film between a solid plate 301 and a substrate 304 is shown in FIGS. 7A-7C. As shown in FIG. 7A, in the process of spraying a low tension liquid on the surface of the substrate 304, an island-like liquid film is theoretically formed. FIG. 7B shows that the solid plate 301 acts on the surface of the substrate 304. The solid plate 301 leaves the substrate 304 at a specific speed. During the movement, the solid plate 301 is substantially parallel to the surface of the substrate 304. At the same time, the substrate 304 rotates and the rotation speed is determined by the drying performance. When the solid plate 301 leaves the substrate 304, there is a laminar flow 309 below the solid plate 301. Figure 7C shows the solid plate 301 acting on The surface of the substrate 304. The interaction between centrifugal force and surface tension causes a uniform liquid film to cover the substrate 304 below the solid plate 301.

As shown in FIG. 8, another embodiment of the substrate cleaning and drying principle using the solid plate 401 is shown. The Brownian motion surface appears to be the random movement of suspended particles 410 in a liquid, especially in a liquid film. If the temperature of the liquid film increases, Brownian motion intensifies, and if the viscosity of the liquid decreases, Brownian motion still intensifies. Therefore, the liquid film is heated through the solid plate 401 with the low-tension liquid conveying system, which intensifies the Brownian motion of the particles 410 and pollutants, and prevents more particles 410 and pollutants from attaching to the surface of the substrate 404. In addition, by installing a megasonic wave transducer on the solid plate 401 to apply megasonic wave energy to the liquid film, the removal of microscopic high-speed flow fields caused by the sonic wave energy may reattach particles 410 and contaminants to the surface of the substrate 404.

As shown in FIG. 9, another embodiment of an apparatus for cleaning and drying an integrated circuit substrate is shown. The device includes a chuck 503 on which the substrate 504 is placed and supported. The chuck 503 is connected to a driving unit 505. The driving unit 505 may be, for example, a motor. The driving unit 505 drives the chuck 503 to rotate, and the substrate 504 rotates with the chuck 503. The solid plate 501 is located above the substrate 504. The first nozzle 507 is provided at an end of the solid plate 501 to spray deionized water on the surface of the substrate 504. The second nozzle 506 is disposed at the end of the solid plate 501 and is close to the first nozzle 507. The second nozzle 506 is closer to the end of the solid plate 501 than the first nozzle 507. The second nozzle 506 sprays a low-tension liquid onto the surface of the substrate . The movable arm 502 is located above the base plate 504 and is opposed to the end of the solid plate 501 to supply nitrogen. In addition, the device also includes a temperature control device 511, a temperature control device 511 provided on the solid plate 501 It is coated with PEEK, and the temperature control device 511 is a plurality of resistance heating blocks or a plurality of radiant heating lamps. During the process of cleaning and drying the substrate 504, thermal energy is provided through the solid plate 501, intensifying the Brownian motion of small particles and contaminants, preventing more particles and contaminants from attaching to the surface of the substrate 504. By using the temperature control device 511, the temperature of the low-tension liquid on the surface of the substrate 504 is maintained in a specific range according to process requirements. The device can improve the processing capacity without reducing the process performance. The device also includes a megasonic transducer provided on the solid plate 501. The megasonic transducer provides megasonic energy to the liquid film, generates cavitation microflow in the confined liquid film, and prevents small particles and pollutants from cleaning. And re-adsorbed to the surface of the substrate 504 during the drying process.

10A-10B are schematic diagrams and top views of another embodiment of a device for cleaning and drying an integrated circuit substrate. The device includes a chuck 603 on which the substrate 604 is placed and supported. The chuck 603 is connected to a driving unit 605. The driving unit 605 may be, for example, a motor. The driving unit 605 drives the chuck 603 to rotate, and the substrate 604 rotates with the chuck 603. The device also includes a solid plate 601 which is rectangular and covers most of the substrate 604. The first nozzle 607 and the second nozzle 606 are fixed at the center of the solid plate 601, respectively. The movable arm 602 is located above the substrate 604 for supplying nitrogen. Compared with the device shown in FIG. 1A, the horizontal moving speed of the solid plate 601 is increased.

11A-11B show another specific embodiment of a device for cleaning and drying an integrated circuit substrate. Compared with the device shown in FIG. 1A, the difference lies in the first nozzle 707 of the device in this embodiment. The second nozzle 706 is disposed on an oblique side of the solid plate 701, and the second nozzle 706 can be moved along the oblique side of the solid plate 701. After the deionized water cleaning process is completed, regardless of whether the solid plate 701 moves outside the substrate 704, the second nozzle 706 sprays a low tension liquid on the substrate 704 and moves along the oblique side of the solid plate 701. The second nozzle 706 can reciprocate along the hypotenuse of the solid plate 701. During the process of spraying the low tension liquid, when the substrate 704 is rotated, moving the second nozzle 706 can keep the low tension liquid film continuously covering the substrate 704. FIG. 11B shows a state where the solid plate 701 is moved outside the substrate 704 during the drying process. During this process, when the second nozzle 706 sprays a low tension liquid, the second nozzle 706 can reciprocate along the hypotenuse of the solid plate 701, and the low tension liquid continuously covers the substrate 704 to avoid problems with watermarks and contaminants. .

12A-12F are various shapes of the solid plate of the present invention. The shape of the solid board can be selected from the following: a hexagon as shown in FIG. 12A, a circle covering the entire substrate as shown in FIG. 12B, a three-quarter circle as shown in FIG. 12C covering a part of the substrate, such as Concentric circles, triangles shown in FIG. 12D, semicircles covering half of the substrate as shown in FIG. 12E, oval shapes as shown in FIG. 12F, and the like.

The invention can be applied not only to the semiconductor industry, but also to other objects that need to be processed, such as solar cell substrates and LCD substrates.

The above description is intended to illustrate and describe the present invention, and does not disclose or limit the present invention in detail. Although the present invention is described with specific embodiments, examples, and applications, obvious modifications and substitutions in the art will still fall into the present invention. protected range.

101‧‧‧Solid board

102‧‧‧ Mobile arm

103‧‧‧chuck

104‧‧‧ substrate

105‧‧‧Drive unit

106‧‧‧Second Nozzle

107‧‧‧first nozzle

Claims (26)

A method for cleaning and drying an integrated circuit substrate, comprising: rotating the substrate at a first rotation speed and moving the solid plate to bring the solid plate closer to the substrate, with a gap between the bottom surface of the solid plate and the upper surface of the substrate; The upper surface of the substrate is sprayed with a cleaning solution to form a cleaning liquid film, which covers the entire upper surface of the substrate; lower the solid plate and make the solid plate substantially parallel to the upper surface of the substrate. At least one area of the solid plate covers the center of the substrate Area, the liquid bridge is confined between the bottom surface of the solid plate and the upper surface of the substrate; the substrate is rotated at a second speed and a low tension liquid is sprayed on the upper surface of the substrate; the solid plate is moved from the center area of the substrate to the edge of the substrate, During the moving process, the solid plate is substantially parallel to the upper surface of the substrate, and the movable arm is moved to a position above the substrate to supply dry gas to the upper surface of the substrate. The method according to claim 1, wherein the cleaning liquid is deionized water or ozone-containing deionized water. The method according to claim 1, wherein the surface tension of the low-tension liquid is lower than the surface tension of the cleaning liquid. The method according to claim 3, wherein the low-tension liquid is any one of the following: ethanol, IPA, acetone, ethyl acetate, or a vapor form of ethanol, IPA, acetone, or ethyl acetate. The method according to claim 1, wherein the first rotation speed is lower than the second rotation speed. The method according to claim 1, characterized in that when the solid plate is about to leave the substrate, the movable arm is moved to the center of the substrate, and then the reciprocating motion of the center of the substrate to the edge of the substrate is started. The method according to claim 1, characterized in that when the solid plate leaves the substrate, the movable arm is moved to the center of the substrate, and then the reciprocating motion of the center of the substrate to the edge of the substrate is started. The method according to claim 1, further comprising heating a liquid bridge confined between a bottom surface of the solid plate and an upper surface of the substrate. The method according to claim 1, further comprising providing acoustic energy to a liquid bridge confined between a bottom surface of the solid plate and an upper surface of the substrate. The method according to claim 1, wherein when the low tension liquid is sprayed onto the upper surface of the substrate, the spraying of the cleaning liquid is stopped. The method according to claim 1, wherein the dry gas is any one of the following: air, nitrogen, or argon. A device for cleaning and drying an integrated circuit substrate, comprising: a chuck for placing and supporting the substrate; A drive unit connected to the chuck, the drive unit drives the chuck to rotate; a solid plate located above the substrate; a first nozzle provided on the solid plate, the first nozzle sprays a cleaning liquid on the surface of the substrate; A second nozzle that sprays a low tension liquid onto the surface of the substrate; a movable arm located above the substrate, the movable arm supplying dry gas to the surface of the substrate. The device according to claim 12, further comprising a temperature control device provided on the solid plate. The device according to claim 13, wherein the temperature control device includes a plurality of resistance heating blocks. The device according to claim 13, wherein the temperature control device includes a plurality of radiant heating lamps. The device according to claim 12, further comprising an acoustic transducer provided on a solid plate. The device according to claim 12, wherein the second nozzle is disposed on a hypotenuse of the solid plate, and the second nozzle is movable along the hypotenuse of the solid plate. The device according to claim 17, wherein the second nozzle can reciprocate along a beveled edge of the solid plate. The device according to claim 12, wherein the shape of the solid plate can be any of the following: triangle, rectangle, hexagon, circle, three-quarters circle, concentric circle, semicircle, and oval . The device according to claim 12, wherein the drive unit drives the chuck to rotate in a clockwise direction, a counterclockwise direction, or an alternate rotation in a clockwise or counterclockwise direction. The device according to claim 12, wherein the bottom surface of the solid plate is made of any one of the following materials: sapphire glass, quartz, stainless steel, or anodized aluminum. The device according to claim 12, characterized in that the bottom surface of the solid plate is made of any one of the following wettable ceramic materials: aluminum oxide or silicon dioxide. The device according to claim 12, characterized in that the bottom surface of the solid plate is made of any one of the following inert metal or metal alloy coatings: platinum, gold, titanium or titanium carbide. The device according to claim 12, characterized in that the bottom surface of the solid plate is made of any one of the following wettable modified plastics: PTFE, PVDF or PEEK. The device according to claim 12, wherein the cleaning liquid is deionized water or ozone-containing deionized water. The device according to claim 12, wherein the low-tension liquid is any one of the following: ethanol, IPA, acetone, ethyl acetate, or a vapor form of ethanol, IPA, acetone, or ethyl acetate.