TWI706433B - Method and device for cleaning and drying integrated circuit substrate - Google Patents

Abstract

The invention discloses a method and device for cleaning and drying an integrated circuit substrate. The device includes: a chuck for placing and supporting the substrate; a drive unit connected to the chuck, which drives the chuck to rotate; a solid plate located above the substrate; a first nozzle arranged on the solid plate, and the first nozzle sprays the surface of the substrate Cleaning liquid; a second nozzle arranged on the solid plate, the second nozzle sprays low-tension chemicals on the surface of the substrate; a movable arm located above the substrate, the movable arm supplies dry gas to the surface of the substrate.

Description

Method and device for cleaning and drying integrated circuit substrate

The present invention relates to the field of semiconductor device manufacturing, in particular to a method and device for cleaning and drying an integrated circuit substrate after the substrate is cleaned by a chemical liquid.

During the processing of semiconductor substrates, it is very important to avoid fine particles and other contaminants from contacting the surface of the substrate, because particles and contaminants will cause low yield and short life of the device, so it is performed after the process steps that generate particles or contaminants The cleaning process is crucial. Nowadays, the main cleaning method is wet cleaning, a group of substrates are cleaned at the same time (trough cleaning) or each substrate is cleaned separately (single chip cleaning). Due to various reasons, such as process flexibility, cost-effectiveness and waste management, monolithic wet cleaning machines have been extremely popular in the field of integrated circuit manufacturing in recent years. In the single-chip wet cleaning machine, the substrate will be treated with a series of different process chemical liquids, and the final step of the process is cleaning and drying. Since drying is the last step of the cleaning process, it is very important for the entire cleaning process.

Spin-clean-dry is a common cleaning method for single-chip wet cleaning machines. In this method, after the chemical liquid treatment, most of the cleaning liquid is thrown off the substrate under the action of centrifugal force. However, due to the cleaning The liquid film becomes thinner and reaches a point at which the viscous resistance of the cleaning liquid film is greater than the centrifugal force, and the centrifugal force is no longer effective for the removal of the cleaning liquid. Finally, the cleaning liquid is removed by natural or forced evaporation. A small amount of non-volatile pollutants and fine particles are present in the thinned cleaning solution. After the cleaning process is completed, these pollutants and fine particles are combined and remain on the substrate. According to the chemical homogeneity of the substrate, these non-volatile contaminants and fine particles can cause many defects on the substrate. A well-known example is the watermark on the hydrophobic area of the substrate.

The development of the Maragoni dryer solves some of the above problems. The Maragoni dryer mainly uses the surface tension gradient force to pull the cleaning liquid film away from the substrate. During the drying process, a tiny residual cleaning liquid film is left on the surface of the substrate. Reference US Patent No. 6,405,452 discloses a method of drying a substrate. In this method, the substrate is first immersed in deionized water in a container, and then a mixture of ethanol vapor and inert gas is passed into the container that is not filled with deionized water. Then, the substrate leaves the deionized water and enters the upper part of the container, thereby removing the deionized water molecules on the surface of the substrate. The liquid movement introduced by the Maragoni drying method only works when there is a surface tension gradient. It does not guarantee that no particles and contaminants will re-attach to the substrate surface in other places. Once re-attached, the particles and contaminants will be difficult to remove. In order to better remove particles and contaminants, an effective method is needed to prevent particles and contaminants from re-attaching to the substrate surface.

According to one aspect of the present invention, a method for cleaning and The method of drying an integrated circuit substrate includes: rotating the substrate at a first rotation speed and moving the solid plate to bring the solid plate close to the substrate, and there is a gap between the bottom surface of the solid plate and the upper surface of the substrate; and spraying a cleaning liquid on the upper surface of the substrate to form Cleaning the liquid film, the cleaning liquid film covers the entire upper surface of the substrate; lower the solid plate and make the solid plate substantially parallel to the upper surface of the substrate, at least one area of the solid plate covers the central area of the substrate, and the liquid bridge is limited to the solid plate Between the bottom surface of the substrate and the upper surface of the substrate; rotate the substrate at the second speed and spray low-tension chemicals on the upper surface of the substrate; move the solid plate from the center area of the substrate to the edge of the substrate. During the movement, the solid plate is roughly The upper surface is parallel to the upper surface of the substrate, and the movable arm is moved to a position above the substrate to supply dry gas to the upper surface of the substrate.

According to another aspect of the present invention, a device for cleaning and drying an integrated circuit substrate is provided, which includes: a chuck for placing and supporting the substrate; a driving unit connected to the chuck for driving the chuck to rotate; Solid plate; a first nozzle set on the solid plate for spraying cleaning fluid on the surface of the substrate; a second nozzle set on the solid plate for spraying low-tension chemicals on the surface of the substrate; located above the substrate for supplying the surface of the substrate Movable arm for dry gas.

101: solid board

102: movable arm

103: Chuck

104: substrate

105: drive unit

106: second nozzle

107: The first nozzle

108: Water film

201: solid board

204: Substrate

301: solid board

304: substrate

309: Laminar Flow

401: solid board

404: substrate

410: Particle

501: solid board

502: movable arm

503: Chuck

504: Substrate

505: drive unit

506: second nozzle

507: first nozzle

511: Temperature control device

601: solid board

602: movable arm

603: Chuck

604: substrate

605: drive unit

606: second nozzle

607: first nozzle

701: solid board

704: substrate

706: second nozzle

707: first nozzle

In order to make the present invention more comprehensible to those skilled in the art, the specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings, in which: Figure 1A depicts a specific embodiment of the device for cleaning and drying an integrated circuit substrate; Figure 1B is a top view of the device shown in Figure 1A; Figure 2A-2G depicts a specific embodiment of the cleaning and drying process of the integrated circuit substrate Figure 3A-3C describes the principle of cleaning and drying integrated circuit substrates; Figure 4 describes the principle of cleaning and drying integrated circuit substrates; Figure 5A-5B describes the principle of cleaning and drying integrated circuit substrates; Figure 6A- 6D describes the cleaning and drying principles of integrated circuit substrates; Figures 7A-7C describe the cleaning and drying principles of integrated circuit substrates; Figure 8 describes the cleaning and drying principles of integrated circuit substrates; Figure 9 describes the cleaning and drying principles Another specific embodiment of the device for cleaning and drying the integrated circuit substrate; FIG. 10A depicts another specific embodiment of the device for cleaning and drying the integrated circuit substrate; FIG. 10B is a top view of FIG. 10A; FIGS. 11A-11B describe Another specific embodiment of the device for cleaning and drying an integrated circuit substrate is shown; Figures 12A-12F depict various shapes of solid plates.

Several embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

As shown in Figures 1A-1B, the cleaning method proposed by the present invention And a specific embodiment of a device for drying an integrated circuit substrate. The device includes a chuck 103 for placing and supporting a substrate 104. The chuck 103 is connected to a driving unit 105. The driving unit 105 may be, for example, a motor. The driving unit 105 drives the chuck 103 to rotate, and the substrate 104 rotates together with the chuck 103. The driving unit 105 may drive the chuck 103 to rotate in a clockwise direction, a counterclockwise direction, or clockwise and counterclockwise alternately. The solid board 101 is located above the substrate 104. The bottom surface of the solid plate 101 can be made of any of the following materials: sapphire glass, quartz, stainless steel or anodized aluminum. The bottom surface of the solid plate 101 can also be made of any of the following wettable ceramic materials: aluminum oxide or silicon dioxide. The bottom surface of the solid plate 101 can also be made of any of the following inert metals or metal alloy coatings: platinum, gold, titanium or titanium carbide. The bottom surface of the solid board 101 can also be made of any of the following wettable modified plastics: PTFE, PVDF or PEEK.

The first nozzle 107 is provided at the end of the solid plate 101 to spray the cleaning liquid onto the surface of the substrate 104. The cleaning fluid is deionized water or deionized water containing ozone. The second nozzle 106 is arranged at the end of the solid plate 101 and is adjacent to the first nozzle 107, and the second nozzle 106 is closer to the end of the solid plate 101 than the first nozzle 107, and the second nozzle 106 is used to spray low pressure on the surface of the substrate 104. Tension chemicals. The low-tension chemical can be any one of the following: ethanol, IPA, acetone, ethyl acetate, or the vapor form of ethanol, IPA, acetone, and ethyl acetate. Preferably, the low-tension chemical is IPA liquid or IPA vapor. The movable arm 102 is located above the substrate 104 and opposite to the end of the solid plate 101 to supply a drying gas to the surface of the substrate 104. The drying gas can be any of the following: air, nitrogen, or argon, preferably nitrogen.

According to this embodiment, the present invention also provides cleaning and drying process steps, in which deionized water, IPA and nitrogen are sprayed onto the surface of the substrate 104 and combined with the application of the solid plate 101, particles and other contaminants will be effectively removed , And can prevent the introduction of particles onto the surface of the substrate 104 and the device itself. The operation steps of using the solid board 101 can be set as follows:

Step 1: Rotate the substrate 104 at the first rotation speed ω, the range of ω is 10-50 rpm, move the solid plate 101 so that the solid plate 101 is close to the substrate 104, and there is a gap between the bottom surface of the solid plate 101 and the upper surface of the substrate 104.

Step 2: Use the first nozzle 107 to spray deionized water on the upper surface of the substrate 104 to form a water film 108. The water film 108 covers the entire upper surface of the substrate 104. The thickness of the water film 108 is about 3 mm. Figure 2A shows step 2 Example.

Step 2 is a deionized water cleaning step. In this step, since the substrate 104 rotates at a relatively low speed, the water film 108 is a continuous water film and covers the entire upper surface of the substrate 104.

Step 3: Lower the solid plate 101. The bottom surface of the solid plate 101 is substantially parallel to the upper surface of the substrate 104. “Substantially parallel” here means that the bottom surface of the solid plate 101 is parallel or approximately parallel to the upper surface of the substrate 104. The solid plate 101 is close to the substrate 104 to form a liquid bridge between the bottom surface of the solid plate 101 and the upper surface of the substrate 104. The liquid bridge is confined between the bottom surface of the solid plate 101 and the upper surface of the substrate 104 due to capillary phenomenon. At least one area on the solid board 101 covers the central area of the substrate 104, and the central area includes the center of the substrate 104 and an area close to the center.

Step 4: Rotate the substrate 104 at a second rotation speed of about 300 rpm and The upper surface of the substrate 104 is sprayed with IPA for one second, and the IPA is sprayed onto the upper surface of the substrate 104 through the second nozzle 106. FIG. 2B shows an example of step 4. As the substrate 104 continues to rotate, the path of the IPA sprayed on the upper surface of the substrate 104 is spiral, as shown in FIG. 2C. In this step, when the IPA is sprayed on the upper surface of the substrate 104, the spraying of deionized water can be stopped.

Step 5: Move the solid plate 101 from the central area of the substrate 104 to the edge of the substrate 104 at a programmed speed. During the movement, the solid plate 101 is substantially parallel to the upper surface of the substrate 104. At the same time, move the movable arm 102 to a specific position above the substrate 104 to supply nitrogen to the upper surface of the substrate 104, and then start to reciprocate between the specific position and the edge of the substrate 104. The end point of the movable arm 102 is the end of the substrate 104. Edge, this process helps to remove particles. The substrate 104 is continuously rotated at a second rotation speed of about 300 rpm and IPA is continuously sprayed on the upper surface of the substrate 104. Figure 2D shows an example of step 5. FIG. 2E shows the spiral motion track description of the IPA on the upper surface of the substrate 104.

As shown in Figure 2F, in step 5, preferably, when the solid plate 101 is about to leave the substrate 104, move the movable arm 102 to the center of the substrate 104, and then start the reciprocating movement from the center to the edge of the substrate 104, the movable arm 102 The end point of the movement is at the edge of the substrate 104.

As shown in FIG. 2G, in step 5, preferably, after the solid plate 101 leaves the substrate 104, move the movable arm 102 to the center of the substrate 104 to supply nitrogen, and then start the reciprocating movement from the center to the edge of the substrate 104. The end of the movement of the arm 102 is at the edge of the base plate 104.

Because the liquid bridge is limited to the bottom surface of the solid plate 101 and the substrate Between the upper surface of 104, a low-tension chemical with a surface tension lower than that of deionized water is introduced onto the free liquid surface of the water film 108 near the edge of the solid plate 101, and is located in the central area of the substrate 104. A surface tension gradient area is formed at or near the center. The moving solid plate 101 pushes the water film 108 outward, thereby breaking the continuity of the water film 108 in the central area of the substrate 104. As the solid plate 101 moves outwards, dragging the water film 108 below it moves in the same way as described above. The water film 108 below the bottom surface of the solid plate 101 continues to contact with the low-tension chemical sprayed on the solid plate 101 to maintain the edge surface of the end of the solid plate 101 The existence of a tension gradient pushes the water film 108 to flow outward. Therefore, the substrate 104 can be dried without water marks, and particles and contaminants are removed along with the water film 108 and will not be adsorbed to the surface of the substrate 104 again. The reduction speed of the water film 108 directly depends on the moving speed of the solid plate 101 and the rotation speed of the substrate 104. At the end of the water film 108 removal process, nitrogen gas can be supplied to the substrate 104 by a separate conveying device to help evaporate the volatile components remaining on the surface of the substrate 104.

According to the cleaning and drying principles shown in Figures 3A-3C, surface tension is the most important for drying performance. In a commonly used Maragoni dryer, particles and water film are removed by pulling the substrate from the water covered with the IPA layer. At 20°C, the surface tension of IPA is 21.3mN/m, and the surface tension of deionized water is 72.7mN/m. Since liquids with high surface tension have stronger pulling force on the surrounding liquids than liquids with low surface tension, the existence of surface tension gradients will naturally cause the liquid to flow from areas of low surface tension to areas of high surface tension. The amount of IPA on the water surface, the temperature in the cavity, and the speed at which the substrate is pulled out need to be precisely controlled. Due to low viscosity and low surface tension, IPA dries in a single piece of clean There is also a market in washing machines. IPA is sprayed onto the surface of the substrate through a nozzle, and then the substrate is rotated at a high speed to dry the substrate through centrifugal force. This method is very convenient, but for the surface of a hydrophobic and hydrophilic hybrid silicon substrate, during the drying process, the surface may have a watermark problem. All existing Maragoni drying technologies have a free liquid surface during the drying process. The method disclosed in the present invention confines the water film 108 between the bottom surface of the solid plate 101 and the upper surface of the substrate 104. Through this method, no matter whether the substrate 104 is With a wettable surface, through the movement of the solid plate 101 and the rotation of the base plate 104, as well as the additional liquid spraying device of the moving solid plate 101, the continuity of the moving water film 108 can be maintained without being broken. The driving force of the surface tension gradient between the two liquids causes the water film 108 to be completely pulled away from the surface of the substrate 104. The continuity of the restricted water film 108 has not been broken, so when it is removed from the surface of the substrate 104, the drying marks of the drops are effectively avoided. These drying marks are usually formed in a ring shape on the hydrophobic surface, which is the so-called "watermark". They are known for reducing device yields in semiconductor manufacturing.

When the solid plate 101 moves outwards, drag the restricted water film 108 under the solid plate 101 to move in the same track. The water film 108 under the bottom surface of the solid plate 101 continues to contact with the low-tension chemical sprayed on the solid plate 101 to maintain the solid plate. The surface tension gradient area at the end edge of 101 drives the water film 108 to flow outward. The reduction speed of the water film 108 directly depends on the moving speed of the solid plate 101 and the rotation speed of the substrate 104. FIG. 3C shows an embodiment in which the water film 108 under the bottom surface of the solid plate 101 is in contact with the low-tension chemical sprayed on the solid plate 101. γc is the capillary length of the water film 108 above the surface of the substrate 104 and below the solid plate 101, and can be calculated as follows:

Among them, γ is the surface tension, ρ is the density of the liquid, and g is the acceleration due to gravity. In the drying process disclosed in the present invention, γ gradually decreases due to the spraying of low-tension chemicals. When the solid plate 101 leaves the substrate 104, γc becomes smaller and smaller.

Refer to Figure 4, which illustrates two properties of the substrate. The contact angle φ is greater than 90°, and the substrate shows hydrophobicity. The contact angle φ is less than 90°, and the substrate shows hydrophilicity. It is difficult to remove surface particles from a hydrophobic substrate. In the semiconductor industry, the commonly used method for removing particles is to change the hydrophobicity of the substrate to hydrophilic. However, during the process, a slight oxide layer will grow on the substrate. It is harmful to the electrical characteristics of the device, especially the critical dimension is reduced to 65nm and below. It is necessary and urgent to develop an integrated drying method and equipment with controllable chemical oxide layer.

5A-5B show an example of the basic principle of cleaning and drying the substrate 104 using the solid plate 101. As shown in FIG. 5A, by rotating the substrate 104, the deionized water film can be maintained on the surface and edges of the substrate 104. The deionized water film is very important for the next process steps, for example, to prevent high chemical concentration in local areas. Due to the separation pressure of the liquid film at the edge of the substrate 104, FIG. 5A illustrates an unstable state. After the IPA is sprayed and the IPA diffuses into the deionized water film, a surface tension gradient will be generated in the mixed liquid, and the interaction between the surface tension and the separation pressure at the edge of the substrate 104 makes the entire liquid film divided into two parts, as shown in FIG. 5B. Due to centrifugal force and gravity, the part located at the edge of the substrate 104 will drop from the substrate 104, as shown in FIG. 5B The liquid film shown can solve the problem of watermark on the edge of the substrate 104.

6A-6D show another embodiment of the basic principle of cleaning and drying the substrate 204 using the solid plate 201. FIG. 6A shows the contact angle φ of the liquid phase on the substrate 204, and the relationship between φ and the surface characteristics of the substrate has been presented in FIG. Figure 6B shows the capillary force, which occurs when the liquid fills the tiny space between two moving parts. When the liquid contact angle φ between two movable parts is less than 90°, there is a gravitational force between the two surfaces due to the formation of a "liquid bridge". According to the theory, the surface tension is: γ=Fmax/2πr

Among them, Fmax is the maximum excess force and r is the radius of the liquid.

FIG. 6C shows a phenomenon that may occur during the process of spraying the low-tension chemical onto the surface of the substrate 204, which is caused by surface tension and is harmful to the drying process of the substrate 204. Fortunately, this phenomenon can be avoided through the application of the solid board 201. As shown in FIG. 6D, it can be seen that a uniform liquid film covers the substrate 204 under the solid plate 201, and the gap d between the bottom surface of the solid plate 201 and the upper surface of the substrate 204 should be controlled to be less than r.

7A-7C show an example of a formal theory about the uniform liquid film between the solid plate 301 and the substrate 304. As shown in FIG. 7A, in the process of spraying the low-tension chemical on the surface of the substrate 304, an island-like liquid film is theoretically formed. FIG. 7B shows that the solid plate 301 acts on the surface of the substrate 304. The solid plate 301 leaves the substrate 304 at a specific speed. During the movement, the solid plate 301 is substantially parallel to the surface of the substrate 304. At the same time, the substrate 304 rotates and the rotation speed is determined by the drying performance. When the solid plate 301 leaves the substrate 304, there is a laminar flow 309 under the solid plate 301. Figure 7C shows the role of solid plate 301 On the surface of the substrate 304. The interaction between centrifugal force and surface tension causes a uniform liquid film to cover the substrate 304 below the solid plate 301.

FIG. 8 shows another embodiment of the principle of substrate cleaning and drying using a solid plate 401. On the surface, Brownian motion is the random motion of suspended particles 410 in the liquid, especially in the liquid film. If the temperature of the liquid film increases, the Brownian motion will increase, and if the viscosity of the liquid decreases, the Brownian motion will still increase. Therefore, the liquid film is heated through the solid plate 401 with a low-tension chemical delivery system, which intensifies the Brownian motion of the particles 410 and contaminants, and prevents more particles 410 and contaminants from adhering to the surface of the substrate 404. In addition, by installing a megasonic transducer on the solid plate 401 to apply megasonic energy to the liquid film, the microscopic high-speed flow field caused by the acoustic energy removes particles 410 and contaminants that may reattach to the surface of the substrate 404.

Fig. 9 shows another specific embodiment of the device for cleaning and drying the integrated circuit substrate. The device includes a chuck 503 for placing and supporting a substrate 504. The chuck 503 is connected to a driving unit 505. The driving unit 505 may be, for example, a motor. The driving unit 505 drives the chuck 503 to rotate, and the substrate 504 rotates with the chuck 503. The solid plate 501 is located above the substrate 504. The first nozzle 507 is provided at the end of the solid plate 501 to spray deionized water to the surface of the substrate 504. The second nozzle 506 is arranged at the end of the solid plate 501 and is close to the first nozzle 507, and the second nozzle 506 is closer to the end of the solid plate 501 than the first nozzle 507, and the second nozzle 506 sprays low-tension chemical on the surface of the substrate 504 Product. The movable arm 502 is located above the substrate 504 and opposite to the end of the solid plate 501 to supply nitrogen. In addition, the device also includes a temperature control device 511 arranged on the solid plate 501, the temperature control device 511 is coated with PEEK, and the temperature control device 511 is a plurality of resistance heating blocks or a plurality of radiant heating lamps. During the process of cleaning and drying the substrate 504, heat energy is provided through the solid plate 501, which intensifies the Brownian motion of small particles and pollutants, and prevents more particles and pollutants from adhering to the surface of the substrate 504. By using the temperature control device 511, the temperature of the low-tension chemical on the surface of the substrate 504 is maintained within a specific range according to process requirements. The device can improve the processing capacity without reducing the process performance. The device also includes a megasonic transducer arranged on the solid plate 501. The megasonic transducer provides megasonic energy to the liquid film, generates cavitation microflow in the restricted liquid film, and prevents small particles and pollutants from cleaning And re-adsorbed to the surface of the substrate 504 during the drying process.

10A-10B are schematic and plan views of another specific embodiment of the device for cleaning and drying an integrated circuit substrate. The device includes a chuck 603 for placing and supporting a substrate 604. The chuck 603 is connected to a driving unit 605. The driving unit 605 may be, for example, a motor. The driving unit 605 drives the chuck 603 to rotate, and the substrate 604 rotates together with the chuck 603. The device also includes a solid plate 601 which is rectangular and covers most of the substrate 604. The first nozzle 607 and the second nozzle 606 are respectively fixed at the center of the solid plate 601. The movable arm 602 is located above the substrate 604 for supplying nitrogen. Compared with the device shown in FIG. 1A, the horizontal movement speed of the solid plate 601 is increased.

11A-11B shows another specific embodiment of the device for cleaning and drying integrated circuit substrates. Compared with the device shown in FIG. 1A, the difference lies in the first nozzle 707 of the device in this embodiment. Is set at the end of the solid plate 701, and the second nozzle 706 is set at the oblique The second nozzle 706 can move along the oblique side of the solid plate 701. After the deionized water cleaning process is completed, regardless of whether the solid plate 701 moves to the outside of the substrate 704, the second nozzle 706 sprays the low-tension chemical to the substrate 704 and moves along the oblique side of the solid plate 701. The second nozzle 706 can reciprocate along the oblique side of the solid plate 701. In the process of spraying the low-tension chemical, when the substrate 704 rotates, moving the second nozzle 706 can keep the low-tension liquid film continuously covering the substrate 704. FIG. 11B shows a state where the solid plate 701 moves to the outside of the substrate 704 during the drying process. During this process, when the second nozzle 706 sprays the low-tension chemical, the second nozzle 706 can reciprocate along the oblique edge of the solid plate 701, and the low-tension chemical continuously covers the substrate 704 to avoid watermarks and contamination The problem.

Figures 12A-12F are various shapes of the solid plate of the present invention. The shape of the solid plate can be selected from the following: a hexagon as shown in Figure 12A, a circle as shown in Figure 12B covering the entire substrate, a three-quarter circle as shown in Figure 12C covering part of the substrate, such as Concentric circles shown in FIG. 12D, triangles, semicircles covering half of the substrate shown in FIG. 12E, ellipses shown in FIG. 12F, and the like.

The present invention can be applied not only to the semiconductor industry, but also to other objects that need to be processed, such as solar cell substrates and LCD substrates.

The above description is to illustrate and describe the present invention, and does not disclose or limit the present invention in detail. Although the present invention is illustrated by specific embodiments, examples, and applications, obvious changes and substitutions in the art will still fall into the present invention. protected range.

101: solid board

102: movable arm

103: Chuck

104: substrate

105: drive unit

106: second nozzle

107: The first nozzle

Claims (26)

A method for cleaning and drying an integrated circuit substrate, which is characterized in that it comprises: rotating a substrate at a first speed and moving a solid plate to bring the solid plate close to the substrate, with a gap between the bottom surface of the solid plate and the upper surface of the substrate; The upper surface of the substrate is sprayed with cleaning liquid to form a cleaning liquid film, which covers the entire upper surface of the substrate; lower the solid plate and make the solid plate substantially parallel to the upper surface of the substrate, and at least one area of the solid plate covers the center of the substrate Area, the liquid bridge is confined between the bottom surface of the solid plate and the upper surface of the substrate; rotate the substrate at the second speed and spray low-tension chemical onto the upper surface of the substrate to move the solid plate from the center area of the substrate to the edge of the substrate. During the movement, the solid plate is substantially parallel to the upper surface of the substrate, and the movable arm is moved to a position above the substrate to supply dry gas to the upper surface of the substrate. The method according to claim 1, wherein the cleaning liquid is deionized water or ozone-containing deionized water. The method according to claim 1, wherein the surface tension of the low-tension chemical is lower than the surface tension of the cleaning liquid. The method according to claim 3, wherein the low-tension chemical is any one of the following: ethanol, IPA, acetone, ethyl acetate or the vapor form of ethanol, IPA, acetone, and ethyl acetate. The method according to claim 1, wherein the first rotation speed is lower than the second rotation speed. The method according to claim 1, wherein when the solid board is about to leave the substrate, the movable arm is moved to the center of the substrate, and then the reciprocating movement from the center of the substrate to the edge of the substrate is started. The method according to claim 1, characterized in that after the solid plate leaves the substrate, the movable arm is moved to the center of the substrate, and then the reciprocating movement from the center of the substrate to the edge of the substrate is started. The method according to claim 1, further comprising heating a liquid bridge confined between the bottom surface of the solid plate and the upper surface of the substrate. The method according to claim 1, further comprising providing acoustic energy to a liquid bridge confined between the bottom surface of the solid plate and the upper surface of the substrate. The method according to claim 1, wherein when the low-tension chemical is sprayed on the upper surface of the substrate, the spraying of the cleaning liquid is stopped. The method according to claim 1, wherein the drying gas is any one of the following: air, nitrogen or argon. A device for cleaning and drying an integrated circuit substrate, which is characterized by comprising: a chuck for placing and supporting the substrate; A drive unit connected to the chuck, which drives the chuck to rotate; a solid plate located above the substrate, which moves from the center area of the substrate to the edge of the substrate; a first nozzle arranged on the solid plate, the The first nozzle sprays the cleaning liquid on the surface of the substrate; the second nozzle arranged on the solid plate sprays low-tension chemicals on the surface of the substrate, and the liquid bridge is confined between the bottom surface of the solid plate and the surface of the substrate; A movable arm above the substrate, which supplies dry gas to the surface of the substrate. The device according to claim 12, further comprising a temperature control device arranged on the solid plate. The device according to claim 13, wherein the temperature control device includes a plurality of resistance heating blocks. The device according to claim 13, wherein the temperature control device includes a plurality of radiant heating lamps. The device according to claim 12, characterized in that it further comprises an acoustic transducer arranged on a solid plate. The device according to claim 12, wherein the second nozzle is arranged on the oblique side of the solid plate, and the second nozzle can move along the oblique side of the solid plate. The device according to claim 17, wherein the second nozzle can reciprocate along the oblique side of the solid plate. The device according to claim 12, wherein the shape of the solid plate can be any one of the following: triangle, rectangle, hexagon, circle, three-quarter circle, concentric circle, semicircle and ellipse . The device according to claim 12, wherein the drive unit drives the chuck to rotate in a clockwise direction, a counterclockwise direction, or alternately rotate in a clockwise and counterclockwise direction. The device according to claim 12, characterized in that the bottom surface of the solid plate is made of any one of the following materials: sapphire glass, quartz, stainless steel or anodized aluminum. The device according to claim 12, wherein the bottom surface of the solid plate is made of any one of the following wettable ceramic materials: aluminum oxide or silicon dioxide. The device according to claim 12, wherein the bottom surface of the solid plate is made of any of the following inert metals or metal alloy coatings: platinum, gold, titanium or titanium carbide. The device according to claim 12, characterized in that the bottom surface of the solid plate is made of any one of the following wettable modified plastics: PTFE, PVDF or PEEK. The device according to claim 12, wherein the cleaning liquid is deionized water or ozone-containing deionized water. The device according to claim 12, wherein the low-tension chemical is any one of the following: ethanol, IPA, acetone, ethyl acetate or a vapor form of ethanol, IPA, acetone, and ethyl acetate.

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