CN106312220A - Ceramic substrate copper cladding low-temperature connection method for power module - Google Patents
Ceramic substrate copper cladding low-temperature connection method for power module Download PDFInfo
- Publication number
- CN106312220A CN106312220A CN201610888270.XA CN201610888270A CN106312220A CN 106312220 A CN106312220 A CN 106312220A CN 201610888270 A CN201610888270 A CN 201610888270A CN 106312220 A CN106312220 A CN 106312220A
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- Prior art keywords
- powder
- ceramic substrate
- copper
- mass fraction
- oxygen
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/008—Soldering within a furnace
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/20—Preliminary treatment of work or areas to be soldered, e.g. in respect of a galvanic coating
- B23K1/206—Cleaning
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
- B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
- B23K35/0244—Powders, particles or spheres; Preforms made therefrom
- B23K35/025—Pastes, creams, slurries
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
- B23K35/262—Sn as the principal constituent
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
- C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
- C04B37/023—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used
- C04B37/026—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used consisting of metals or metal salts
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
- B23K2103/52—Ceramics
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Ceramic Products (AREA)
Abstract
The invention discloses a ceramic substrate copper cladding low-temperature connection method for a power module. The method includes the following steps that firstly, a ceramic substrate and oxygen-free copper are subject to surface treatment, and then are subject to acetone washing; secondly, Ag powder, Cu powder, Sn powder and Ti powder or the Ag powder, the Cu powder, In powder and the Ti powder are mixed to form metal powder, an organic binder is added into the metal powder, and a mixture is placed into a ball milling tank for mechanical ball milling so as to prepare active brazing filler metal paste; and thirdly, samples are assembled from top to bottom according to the sequence of the oxygen-free copper/ active brazing filler metal /the ceramic substrate, and connection is achieved in a vacuum brazing furnace. According to the method, the manner that low-melting-point elements are added into the active brazing filler metal is adopted, the connection temperature of the oxygen-free copper and the ceramic substrate is reduced, residual stress in the substrate is reduced, and the service life is prolonged.
Description
Technical field
The invention belongs to Electronic Packaging field, be specifically related to a kind of power model ceramic substrate and cover the law temperature joining side of copper
Method.
Background technology
In Electronic Packaging field, general employing is directly covered copper technology (DBC) and is connected with oxygen-free copper by ceramic substrate.DBC skill
Art is that copper foil is placed in Al2O3On ceramic substrate, oxygen containing atmosphere is heated to 1065 ~ 1085 C, makes copper foil directly cover
It is connected on Al2O3On ceramic substrate.Its principle is, understands in conjunction with Cu-O binary phase diagraml, under the conditions of certain oxygen content, works as heating
During to 1063 C, Cu and O forms eutectic liquid phase CuO, this eutectic liquid phase and Al2O3Ceramic contact the CuO+Al that reacts2O3=
CuAl2O3, ceramic substrate is formed good wet, and realizes connecting.And for new A lN ceramic substrate, first to AlN
Surface carries out oxidation processes so that it is surface obtains one layer of Al2O3Film, then uses DBC technology to realize it and connects with covering of copper.DBC skill
Art, requires higher to the surface smoothness of ceramic substrate and copper, and its process window is narrower, ultimately results in yield rate relatively low.
For above weak point, in patent CN104409425A use active solder AgCuTi or AgCuZr achieve ceramic substrate with
Covering of copper connects, and uses the mode of active soldering to realize covering to connect and can reducing the surface smoothness to sample and want of ceramic substrate and copper
Ask, but the high-temp solder used can frequently result in and there is bigger residual stress in ceramic substrate and cause it to rupture, impact
Service life.
Summary of the invention
For above-mentioned technical problem, the invention provides a kind of power model ceramic substrate and cover the law temperature joining side of copper
Method, the method can reduce the requirement to substrate flatness, and reduce the residual stress in pottery, improves service life.
The principle of the present invention is by adding Low-Temperature Element Sn or In in cuprio, money base active solder, reducing alloy pricker
The fusing point of material, thus reduce the connection temperature of ceramic substrate and oxygen-free copper, and then alleviate the residual stress in ceramic substrate, improve
The service life of copper-clad base plate.
A kind of power model ceramic substrate of the present invention covers the law temperature joining method of copper, and step is as follows:
1) ceramic substrate and oxygen-free copper are carried out surface process, then clean with acetone；
2) Ag powder, Cu powder, Sn powder, Ti powder or Ag powder, Cu powder, In powder, Ti powder are mixed to form metal dust, to described metal powder
End adds organic binder put into and ball grinder carries out mechanical ball milling prepare active solder cream；
3) assemble sample from top to bottom according to the order of oxygen-free copper/active solder cream/ceramic substrate, realize in vacuum brazing furnace
Connect.
Further, step 2 of the present invention) described in metal dust in the mass fraction of Ag be 5% ~ 30%, the mass fraction of Cu
Being 10% ~ 40%, the mass fraction of Sn is 50% ~ 80%, and the mass fraction of Ti is 3% ~ 8%, or the mass fraction of Ag is 5% ~ 30%, Cu
Mass fraction be 10% ~ 40%, the mass fraction of In is 50% ~ 80%, and the mass fraction of Ti is 3% ~ 8%, when preparing active solder
Organic binder is 1:6 ~ 1:4 with the mass ratio of metal dust, and the mechanical ball milling time is 4 ~ 8 hours.
Further, in step 1), with 1000# and 1500# diamond emery disc, ceramic surface is polished successively, use successively
Polished in oxygen-free copper surface by 800#, 1000# and 2000# sand paper, then will polishing after sample put in acetone ultrasonic clearly
Wash 10 ~ 20min.
Further, in the technical program step 3), active solder cream coating thickness on ceramic substrate is 50 ~ 200 μm.
Further, in the technical program step 3), after sample assembles, paste at oxygen-free copper 10MPa ~ 25MPa applied above
Resultant pressure.
Further, in the technical program step 3), the connection temperature of vacuum brazing is 720 C ~ 800 C, it is preferable that 740 C ~
780 C, most preferably 750 DEG C, the Connection Time is 5min ~ 20min, and vacuum is 5 × 10-3Pa ~ 5 × 10-4Pa.Relatively low connection
Temperature is unfavorable for active element and the abundant reaction of pottery in solder, causes joint adhesion poor；And higher connection temperature meeting
Cause oxygen-free copper to dissolve to solder transition, be unfavorable for alleviating joint stress.
Further, the material of the ceramic substrate used in technical scheme is Al2O3Or AlN.
The beneficial effects of the present invention is: use power model ceramic substrate as above to cover the law temperature joining side of copper
Normal direction active solder adds low melting point element, reduces the connection temperature of ceramic substrate and oxygen-free copper, reduce in substrate
Residual stress, improves service life.
Accompanying drawing explanation
Fig. 1 is the linkage interface microstructure electromicroscopic photograph of oxygen-free copper in embodiment 1/active solder cream/ceramic substrate.
Detailed description of the invention
By specific embodiment, the present invention further will be specifically described below.
Embodiment 1
(1) with 1000# and 1500# diamond emery disc, is polished in AlN ceramic surface successively, successively with 800#, 1000# and
Being polished in oxygen-free copper surface by 2000# sand paper, then the sample after polishing is put into ultrasonic cleaning 15min in acetone；
(2) Ag powder, Cu powder, Sn powder and Ti powder and organic binder are put into ball grinder carries out the active pricker that mechanical ball grinds
Material cream.Wherein the mass fraction of Ag is 10%, and the mass fraction of Cu is 20%, and the mass fraction of Sn is 65%, and the mass fraction of Ti is
5%, organic binder is 1:6 with the mass ratio of metal dust, and the mechanical ball milling time is 6 hours；
(3) at the active solder cream of AlN ceramic surface-coated 50 μm, then oxygen-free copper thick for 0.3mm is fitted with AlN, middle
For soldering paste, at oxygen-free copper 15MPa applied above pressure.The sample assembled is put in soldering oven, is evacuated to 5 × 10-
3Pa, is then heated to 750 C with the speed of 15 C/min, cools to room temperature with the furnace, it is achieved AlN ceramic after insulation 5min
Connect with covering of oxygen-free copper.The microstructure photo of linkage interface, as it is shown in figure 1, AlN ceramic is completely embedded with oxygen-free copper, welds
In seam, zero defect exists.The shearing strength of joint is 48MPa.
Embodiment 2
(1) use 1000# and 1500# diamond emery disc to Al successively2O3Ceramic surface is polished, successively with 800#, 1000# and
Being polished in oxygen-free copper surface by 2000# sand paper, then the sample after polishing is put into ultrasonic cleaning 20min in acetone；
(2) Ag powder, Cu powder, Sn powder and Ti powder and organic binder are put into ball grinder carries out the active pricker that mechanical ball grinds
Material cream.Wherein the mass fraction of Ag is 5%, and the mass fraction of Cu is 30%, and the mass fraction of Sn is 61%, and the mass fraction of Ti is
4%, organic binder is 1:4 with the mass ratio of metal dust, and the mechanical ball milling time is 8 hours；
(3) coat the active solder cream of 100 μm at Al2O3 ceramic surface, then oxygen-free copper thick for 0.5mm fitted with Al2O3,
Centre is soldering paste, at oxygen-free copper 15MPa applied above pressure.The sample assembled is put in soldering oven, it is evacuated to 2 ×
10-3Pa, is then heated to 720 C with the speed of 15 C/min, cools to room temperature with the furnace, it is achieved Al2O3 makes pottery after insulation 10min
Porcelain substrate connects with covering of oxygen-free copper.The shearing strength of joint is 44MPa.
Embodiment 3
(1) with 1000# and 1500# diamond emery disc, is polished in AlN ceramic surface successively, successively with 800#, 1000# and
Being polished in oxygen-free copper surface by 2000# sand paper, then the sample after polishing is put into ultrasonic cleaning 20min in acetone；
(2) Ag powder, Cu powder, Sn powder and Ti powder and organic binder are put into ball grinder carries out the active pricker that mechanical ball grinds
Material cream.Wherein the mass fraction of Ag is 5%, and the mass fraction of Cu is 30%, and the mass fraction of Sn is 61%, and the mass fraction of Ti is
4%, organic binder is 1:4 with the mass ratio of metal dust, and the mechanical ball milling time is 8 hours；
(3) at the active solder cream of AlN ceramic surface-coated 100 μm, then oxygen-free copper thick for 0.3mm is fitted with AlN, middle
For soldering paste, at oxygen-free copper 15MPa applied above pressure.The sample assembled is put in soldering oven, is evacuated to 5 × 10-
3Pa, is then heated to 720 C with the speed of 20 C/min, cools to room temperature with the furnace, it is achieved AlN ceramic after insulation 15min
Connect with covering of oxygen-free copper.The shearing strength of joint is 44MPa.
Embodiment 4
(1) with 1000# and 1500# diamond emery disc, is polished in AlN ceramic surface successively, successively with 800#, 1000# and
Being polished in oxygen-free copper surface by 2000# sand paper, then the sample after polishing is put into ultrasonic cleaning 20min in acetone；
(2) Ag powder, Cu powder, Sn powder and Ti powder and organic binder are put into ball grinder carries out the active pricker that mechanical ball grinds
Material cream.Wherein the mass fraction of Ag is 15%, and the mass fraction of Cu is 20%, and the mass fraction of Sn is 57%, and the mass fraction of Ti is
8%, organic binder is 1:4 with the mass ratio of metal dust, and the mechanical ball milling time is 6 hours；
(3) at the active solder cream of AlN ceramic surface-coated 200 μm, then oxygen-free copper thick for 0.2mm is fitted with AlN, middle
For soldering paste, at oxygen-free copper 20MPa applied above pressure.The sample assembled is put in soldering oven, is evacuated to 2 × 10-
3Pa, is then heated to 780 C with the speed of 20 C/min, cools to room temperature with the furnace, it is achieved AlN ceramic after insulation 15min
Connect with covering of oxygen-free copper.The shearing strength of joint is 52MPa.
Claims (9)
1. a power model ceramic substrate covers the law temperature joining method of copper, it is characterised in that comprise the steps:
1) ceramic substrate and oxygen-free copper are carried out surface process, then clean with acetone；
2) Ag powder, Cu powder, Sn powder, Ti powder or Ag powder, Cu powder, In powder, Ti powder are mixed to form metal dust, to described metal powder
End adds organic binder put into and ball grinder carries out mechanical ball milling prepare active solder cream；
3) assemble sample from top to bottom according to the order of oxygen-free copper/active solder cream/ceramic substrate, realize in vacuum brazing furnace
Connect.
A kind of power model ceramic substrate the most according to claim 1 covers the law temperature joining method of copper, it is characterised in that
Step 2) described in metal dust in the mass fraction of Ag be 5% ~ 30%, the mass fraction of Cu is 10% ~ 40%, the mass fraction of Sn
Being 50% ~ 80%, the mass fraction of Ti is 3% ~ 8%, or the mass fraction of Ag is 5% ~ 30%, and the mass fraction of Cu is 10% ~ 40%, In
Mass fraction be 50% ~ 80%, the mass fraction of Ti is 3% ~ 8%, organic binder and metal dust when preparing active solder
Mass ratio is 1:6 ~ 1:4, and the mechanical ball milling time is 4 ~ 8 hours.
A kind of power model ceramic substrate the most according to claim 1 and 2 covers the law temperature joining method of copper, and its feature exists
In, in step 1), with 1000# and 1500# diamond emery disc, ceramic surface is polished successively, successively with 800#, 1000# and
Being polished in oxygen-free copper surface by 2000# sand paper, then the sample after polishing is put into ultrasonic cleaning 10 ~ 20min in acetone.
A kind of power model ceramic substrate the most according to claim 1 and 2 covers the law temperature joining method of copper, and its feature exists
In, in step 3), active solder cream coating thickness on ceramic substrate is 50 ~ 200 μm.
A kind of power model ceramic substrate the most according to claim 1 and 2 covers the law temperature joining method of copper, and its feature exists
In, in step 3), after sample assembles, at oxygen-free copper 10MPa ~ 25MPa applied above pressure.
A kind of power model ceramic substrate the most according to claim 1 and 2 covers the law temperature joining method of copper, and its feature exists
In, in step 3), the connection temperature of vacuum brazing is 720 C ~ 800 C, and the Connection Time is 5min ~ 20min, vacuum is 5 ×
10-3Pa~5×10-4Pa。
A kind of power model ceramic substrate the most according to claim 6 covers the law temperature joining method of copper, it is characterised in that
In step 3), the connection temperature of vacuum brazing is 740 C ~ 780 C.
A kind of power model ceramic substrate the most according to claim 6 covers the law temperature joining method of copper, it is characterised in that
In step 3), the connection temperature of vacuum brazing is 750 C.
A kind of power model ceramic substrate the most according to claim 1 and 2 covers the law temperature joining method of copper, and its feature exists
In, the material of described ceramic substrate is Al2O3Or AlN.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610888270.XA CN106312220A (en) | 2016-10-12 | 2016-10-12 | Ceramic substrate copper cladding low-temperature connection method for power module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610888270.XA CN106312220A (en) | 2016-10-12 | 2016-10-12 | Ceramic substrate copper cladding low-temperature connection method for power module |
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| Publication Number | Publication Date |
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| CN106312220A true CN106312220A (en) | 2017-01-11 |
Family
ID=57820098
Family Applications (1)
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| CN201610888270.XA Pending CN106312220A (en) | 2016-10-12 | 2016-10-12 | Ceramic substrate copper cladding low-temperature connection method for power module |
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107540384A (en) * | 2016-06-27 | 2018-01-05 | 英飞凌科技股份有限公司 | Cermet substrate and its manufacture method |
| CN108890060A (en) * | 2018-09-10 | 2018-11-27 | 西安成立航空制造有限公司 | A kind of soldering processes of red copper and SiC ceramic |
| CN108907385A (en) * | 2018-07-20 | 2018-11-30 | 华侨大学 | A kind of sapphire method of low temperature brazing |
| CN110695565A (en) * | 2019-09-12 | 2020-01-17 | 中国航发北京航空材料研究院 | Indium-based active brazing filler metal for brazing quartz and kovar alloy and brazing process |
| CN110709369A (en) * | 2017-05-30 | 2020-01-17 | 电化株式会社 | Ceramic circuit board and module using the same |
| CN111225890A (en) * | 2017-11-02 | 2020-06-02 | 三菱综合材料株式会社 | Joined body and insulated circuit board |
| CN112851405A (en) * | 2021-01-08 | 2021-05-28 | 中铝材料应用研究院有限公司 | Preparation method of ceramic copper-clad plate |
| CN113843547A (en) * | 2021-09-23 | 2021-12-28 | 浙江亚通焊材有限公司 | Low-temperature active brazing filler metal and method for brazing silicon carbide ceramic |
| WO2023051410A1 (en) * | 2021-09-29 | 2023-04-06 | 比亚迪股份有限公司 | Active metal solder paste composition, solder paste, and method for soldering ceramic and metal |
| CN115989579A (en) * | 2020-10-07 | 2023-04-18 | 株式会社东芝 | Joined body, ceramic circuit board, and semiconductor device |
| CN116134607A (en) * | 2020-07-27 | 2023-05-16 | 株式会社东芝 | Bonded body, circuit board, semiconductor device, and method for manufacturing bonded body |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107540384B (en) * | 2016-06-27 | 2021-09-28 | 英飞凌科技股份有限公司 | Cermet substrate and method for manufacturing the same |
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| CN110709369A (en) * | 2017-05-30 | 2020-01-17 | 电化株式会社 | Ceramic circuit board and module using the same |
| CN111225890A (en) * | 2017-11-02 | 2020-06-02 | 三菱综合材料株式会社 | Joined body and insulated circuit board |
| CN108907385B (en) * | 2018-07-20 | 2021-02-02 | 华侨大学 | Method for brazing sapphire at low temperature |
| CN108907385A (en) * | 2018-07-20 | 2018-11-30 | 华侨大学 | A kind of sapphire method of low temperature brazing |
| CN108890060A (en) * | 2018-09-10 | 2018-11-27 | 西安成立航空制造有限公司 | A kind of soldering processes of red copper and SiC ceramic |
| CN110695565A (en) * | 2019-09-12 | 2020-01-17 | 中国航发北京航空材料研究院 | Indium-based active brazing filler metal for brazing quartz and kovar alloy and brazing process |
| CN110695565B (en) * | 2019-09-12 | 2021-08-03 | 中国航发北京航空材料研究院 | Indium-based active brazing filler metal for brazing quartz and kovar alloy and brazing process |
| CN116134607A (en) * | 2020-07-27 | 2023-05-16 | 株式会社东芝 | Bonded body, circuit board, semiconductor device, and method for manufacturing bonded body |
| CN115989579A (en) * | 2020-10-07 | 2023-04-18 | 株式会社东芝 | Joined body, ceramic circuit board, and semiconductor device |
| CN112851405A (en) * | 2021-01-08 | 2021-05-28 | 中铝材料应用研究院有限公司 | Preparation method of ceramic copper-clad plate |
| CN113843547A (en) * | 2021-09-23 | 2021-12-28 | 浙江亚通焊材有限公司 | Low-temperature active brazing filler metal and method for brazing silicon carbide ceramic |
| WO2023051410A1 (en) * | 2021-09-29 | 2023-04-06 | 比亚迪股份有限公司 | Active metal solder paste composition, solder paste, and method for soldering ceramic and metal |
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Application publication date: 20170111 |