CN108890060A - A kind of soldering processes of red copper and SiC ceramic - Google Patents
A kind of soldering processes of red copper and SiC ceramic Download PDFInfo
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- CN108890060A CN108890060A CN201811054843.4A CN201811054843A CN108890060A CN 108890060 A CN108890060 A CN 108890060A CN 201811054843 A CN201811054843 A CN 201811054843A CN 108890060 A CN108890060 A CN 108890060A
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- Prior art keywords
- sic ceramic
- red copper
- brazing material
- sic
- brazing
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/008—Soldering within a furnace
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/20—Preliminary treatment of work or areas to be soldered, e.g. in respect of a galvanic coating
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/20—Preliminary treatment of work or areas to be soldered, e.g. in respect of a galvanic coating
- B23K1/206—Cleaning
Abstract
The invention discloses the soldering processes of a kind of red copper and SiC ceramic, include the following steps：SiC ceramic and red copper and brazing material to be welded are provided；Red copper to be welded and SiC ceramic end face are cleared up, remove impurity, greasy dirt and the oxidation film on surface, using high-precision milling machine in SiC ceramic welding surface processing micro structure, red copper is polished using abrasive paper for metallograph, red copper and SiC ceramic are placed in acetone soln and carry out ultrasonic cleaning, finally with alcohol rinse and is dried up；(3) it assembles；(4) soldering connection.The present invention enhances solder to the wetability of ceramics in the case where low activity constituent content, through the SiC ceramic with micro-structure, reduces intermetallic compound, improves brazing quality, reduce brazing temperature, reduce thermal stress, realizes the soldering connection under lower temperature.
Description
Technical field
The present invention relates to welding technology field more particularly to the soldering processes of a kind of red copper and SiC ceramic.
Background technique
SiC ceramic has the performances such as high-melting-point, low-density, low thermal coefficient of expansion and higher heat shock resistance, simultaneously also
It has good conductive property and excellent corrosion resistance.In actual application, the connection of SiC ceramic and metal is mainly
Mechanical connection.The method of mechanical connection not only causes the stability of conductive component insufficient, and will increase additional economic cost,
And it is brazed the common method as connection metal and ceramics, the stability of composite component can be improved, and can be with save the cost.
The soldering of SiC ceramic and metal mainly has following difficult point：SiC ceramic to the wetabilitys of most of brazing materials compared with
Difference, can be divided into two classes at present, and one kind is to be brazed after SiC ceramic surface processing, but such a process increases one of works
Sequence, complex process, practical application be not wide.Second is directly brazed using active soldering material, this is at present using more
Method is reacted with SiC ceramic at high temperature using the active element Ti contained in brazing material, improves wetability.But
After increasing active element Ti, active element and red copper react to form Ti2The intermetallic compounds such as Cu, therefore Ti member need to be reduced
Cellulose content.However, brazing material wetability is deteriorated again, dimension after Ti element reduces, it need to be the low activity constituent content the case where
Under, enhancing brazing material realizes soldering connection well to the wetability of ceramics.
Summary of the invention
The purpose of the present invention is to provide the soldering processes of a kind of red copper and SiC ceramic, need to be in low activity constituent content
In the case of, wetability of the enhancing brazing material to ceramics, low brazing temperature reduces thermal stress, realizes the soldering under lower temperature
Connection.
The soldering processes of a kind of red copper and SiC ceramic according to an embodiment of the present invention, include the following steps：
(1) SiC ceramic and red copper and brazing material to be welded are provided；
(2) red copper to be welded and SiC ceramic end face are cleared up, removes the impurity, greasy dirt and oxidation film on surface, benefit
With high-precision milling machine in SiC ceramic welding surface processing micro structure, red copper is polished using abrasive paper for metallograph, by red copper and
SiC ceramic, which is placed in acetone soln, carries out ultrasonic cleaning, finally with alcohol rinse and dries up；
(3) brazing material is placed between red copper and SiC ceramic welding surface, by red copper, SiC ceramic and brazing material with
Red copper is upper, and for SiC ceramic under, centre is the sequence of brazing material, is put into vacuum brazing furnace in a manner of docking；
(4) vacuum brazing furnace is warming up to 700 DEG C first with the rate of 5~12 DEG C/min, keeps the temperature 10~30min, then with 5
The rate of~12 DEG C/min is warming up to 800 DEG C, 10~30min of soaking time, then is cooled to 400 with the rate of 5~15 DEG C/min
It~500 DEG C, 5~10min of soaking time, finally cools to room temperature with the furnace, completes welding.
Further, the high-precision milling machine selects wedge-shaped micro cutter of diamond to carry out cross to SiC ceramic welding surface
Intersect processing and forms rectangular pyramid.
Further, the height of the rectangular pyramid is 300 μm, and X-direction and Y direction spacing are 100 μm.
Further, every square centimeter on the SiC ceramic welding surface to be arranged with 10000 rectangular pyramids.
Further, the brazing material is at smooth SiC ceramic surface profit visual angle less than 90 °.
Further, the chemical composition of the brazing material includes Cu, Si, Al, Ti, wherein the content of Ti be 1.5~
3wt%.
Compared with the prior art, the invention has the beneficial effects that：
1. reducing active element content, intermetallic compound is reduced, improves brazing quality；
2. reducing brazing temperature, reduce thermal stress, realizes the soldering connection under lower temperature.
Specific embodiment
The technical scheme in the embodiments of the invention will be clearly and completely described below, it is clear that described implementation
Example is only a part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, this field is common
Technical staff's every other embodiment obtained without making creative work belongs to the model that the present invention protects
It encloses.
In following embodiment, vacuum brazing furnace selects CZL-150 type soldering oven, and maximum heating temperature is 1400 DEG C, work
Vacuum degree is up to 1 × 10-3Pa, abrasive paper for metallograph are W40~W7 abrasive paper for metallograph.
Embodiment 1
(1) SiC ceramic and red copper and brazing material to be welded are provided, brazing material moistens in smooth SiC ceramic surface
Visual angle is less than 90 °, and the chemical composition of brazing material includes Cu, Si, Al, Ti, and wherein the content of Ti is 1.5wt%, is brazed at this time
Material is 80 ° at smooth SiC ceramic surface profit visual angle；
(2) red copper to be welded and SiC ceramic end face are cleared up, removes the impurity, greasy dirt and oxidation film on surface, benefit
With high-precision milling machine in SiC ceramic welding surface processing micro structure, select wedge-shaped micro cutter of diamond to SiC ceramic welding surface
Right-angled intersection is carried out to process to form rectangular pyramid, the height of rectangular pyramid is 300 μm, and X-direction and Y direction spacing are 100 μm,
It is every square centimeter on SiC ceramic welding surface to be arranged with 10000 rectangular pyramids, red copper is polished using abrasive paper for metallograph, it will
Red copper and SiC ceramic, which are placed in acetone soln, carries out ultrasonic cleaning, finally with alcohol rinse and dries up；
(3) brazing material is placed between red copper and SiC ceramic welding surface, by red copper, SiC ceramic and brazing material with
Red copper is upper, and for SiC ceramic under, centre is the sequence of brazing material, is put into vacuum brazing furnace in a manner of docking；
(4) vacuum brazing furnace is warming up to 700 DEG C first with the rate of 5 DEG C/min, keeps the temperature 10min, then with 5 DEG C/min's
Rate is warming up to 800 DEG C, soaking time 10min, then is cooled to 400 DEG C, soaking time 5min with the rate of 5 DEG C/min, finally
It cools to room temperature with the furnace, completes welding.
Embodiment 2
(1) SiC ceramic and red copper and brazing material to be welded are provided, brazing material moistens in smooth SiC ceramic surface
Visual angle is less than 90 °, and the chemical composition of brazing material includes Cu, Si, Al, Ti, and wherein the content of Ti is 1.8wt%, is brazed at this time
Material is 71 ° at smooth SiC ceramic surface profit visual angle；
(2) red copper to be welded and SiC ceramic end face are cleared up, removes the impurity, greasy dirt and oxidation film on surface, benefit
With high-precision milling machine in SiC ceramic welding surface processing micro structure, select wedge-shaped micro cutter of diamond to SiC ceramic welding surface
Right-angled intersection is carried out to process to form rectangular pyramid, the height of rectangular pyramid is 300 μm, and X-direction and Y direction spacing are 100 μm,
It is every square centimeter on SiC ceramic welding surface to be arranged with 10000 rectangular pyramids, red copper is polished using abrasive paper for metallograph, it will
Red copper and SiC ceramic, which are placed in acetone soln, carries out ultrasonic cleaning, finally with alcohol rinse and dries up；
(3) brazing material is placed between red copper and SiC ceramic welding surface, by red copper, SiC ceramic and brazing material with
Red copper is upper, and for SiC ceramic under, centre is the sequence of brazing material, is put into vacuum brazing furnace in a manner of docking；
(4) vacuum brazing furnace is warming up to 700 DEG C first with the rate of 7 DEG C/min, keeps the temperature 15min, then with 7 DEG C/min's
Rate is warming up to 800 DEG C, soaking time 15min, then is cooled to 420 DEG C, soaking time 6min with the rate of 8 DEG C/min, finally
It cools to room temperature with the furnace, completes welding.
Embodiment 3
(1) SiC ceramic and red copper and brazing material to be welded are provided, brazing material moistens in smooth SiC ceramic surface
Visual angle is less than 90 °, and the chemical composition of brazing material includes Cu, Si, A1, Ti, and wherein the content of Ti is 2wt%, is brazed material at this time
Material is 57 ° at smooth SiC ceramic surface profit visual angle；
(2) red copper to be welded and SiC ceramic end face are cleared up, removes the impurity, greasy dirt and oxidation film on surface, benefit
With high-precision milling machine in SiC ceramic welding surface processing micro structure, select wedge-shaped micro cutter of diamond to SiC ceramic welding surface
Right-angled intersection is carried out to process to form rectangular pyramid, the height of rectangular pyramid is 300 μm, and X-direction and Y direction spacing are 100 μm,
It is every square centimeter on SiC ceramic welding surface to be arranged with 10000 rectangular pyramids, red copper is polished using abrasive paper for metallograph, it will
Red copper and SiC ceramic, which are placed in acetone soln, carries out ultrasonic cleaning, finally with alcohol rinse and dries up；
(3) brazing material is placed between red copper and SiC ceramic welding surface, by red copper, SiC ceramic and brazing material with
Red copper is upper, and for SiC ceramic under, centre is the sequence of brazing material, is put into vacuum brazing furnace in a manner of docking；
(4) vacuum brazing furnace is warming up to 700 DEG C first with the rate of 9 DEG C/min, keeps the temperature 20min, then with 9 DEG C/min's
Rate is warming up to 800 DEG C, soaking time 20min, then is cooled to 450 DEG C, soaking time 8min with the rate of 10 DEG C/min, finally
It cools to room temperature with the furnace, completes welding.
Embodiment 4
(1) SiC ceramic and red copper and brazing material to be welded are provided, brazing material moistens in smooth SiC ceramic surface
Visual angle is less than 90 °, and the chemical composition of brazing material includes Cu, Si, Al, Ti, and wherein the content of Ti is 2.5wt%, is brazed at this time
Material is 39 ° at smooth SiC ceramic surface profit visual angle；
(2) red copper to be welded and SiC ceramic end face are cleared up, removes the impurity, greasy dirt and oxidation film on surface, benefit
With high-precision milling machine in SiC ceramic welding surface processing micro structure, select wedge-shaped micro cutter of diamond to SiC ceramic welding surface
Right-angled intersection is carried out to process to form rectangular pyramid, the height of rectangular pyramid is 300 μm, and X-direction and Y direction spacing are 100 μm,
It is every square centimeter on SiC ceramic welding surface to be arranged with 10000 rectangular pyramids, red copper is polished using abrasive paper for metallograph, it will
Red copper and SiC ceramic, which are placed in acetone soln, carries out ultrasonic cleaning, finally with alcohol rinse and dries up；
(3) brazing material is placed between red copper and SiC ceramic welding surface, by red copper, SiC ceramic and brazing material with
Red copper is upper, and for SiC ceramic under, centre is the sequence of brazing material, is put into vacuum brazing furnace in a manner of docking；
(4) vacuum brazing furnace is warming up to 700 DEG C first with the rate of 11 DEG C/min, keeps the temperature 25min, then with 11 DEG C/min
Rate be warming up to 800 DEG C, soaking time 25min, then be cooled to 480 DEG C, soaking time 9min with the rate of 13 DEG C/min, most
After cool to room temperature with the furnace, complete welding.
Embodiment 5
(1) SiC ceramic and red copper and brazing material to be welded are provided, brazing material moistens in smooth SiC ceramic surface
Visual angle is less than 90 °, and the chemical composition of brazing material includes Cu, Si, Al, Ti, and wherein the content of Ti is 3wt%, is brazed material at this time
Material is 22 ° at smooth SiC ceramic surface profit visual angle；
(2) red copper to be welded and SiC ceramic end face are cleared up, removes the impurity, greasy dirt and oxidation film on surface, benefit
With high-precision milling machine in SiC ceramic welding surface processing micro structure, select wedge-shaped micro cutter of diamond to SiC ceramic welding surface
Right-angled intersection is carried out to process to form rectangular pyramid, the height of rectangular pyramid is 300 μm, and X-direction and Y direction spacing are 100 μm,
It is every square centimeter on SiC ceramic welding surface to be arranged with 10000 rectangular pyramids, red copper is polished using abrasive paper for metallograph, it will
Red copper and SiC ceramic, which are placed in acetone soln, carries out ultrasonic cleaning, finally with alcohol rinse and dries up；
(3) brazing material is placed between red copper and SiC ceramic welding surface, by red copper, SiC ceramic and brazing material with
Red copper is upper, and for SiC ceramic under, centre is the sequence of brazing material, is put into vacuum brazing furnace in a manner of docking；
(4) vacuum brazing furnace is warming up to 700 DEG C first with the rate of 12 DEG C/min, keeps the temperature 30min, then with 12 DEG C/min
Rate be warming up to 800 DEG C, soaking time 30min, then be cooled to 500 DEG C, soaking time 10min with the rate of 15 DEG C/min,
It finally cools to room temperature with the furnace, completes welding.
As content of the Ti in brazing material constantly increases, angle of wetting constantly declines, this is because in brazing material
Ti is reacted with SiC ceramic generates TiC product at interface, according to Went equation, when moistening visual angle less than 90 °, increases roughness
Be conducive to improve solder to the wetability of matrix, in the case where low activity constituent content, increased by the SiC ceramic with micro-structure
Strong solder reduces intermetallic compound to the wetability of ceramics, improves brazing quality, reduces brazing temperature, reduces thermal stress, real
Soldering connection under existing lower temperature.
It although an embodiment of the present invention has been shown and described, for the ordinary skill in the art, can be with
A variety of variations, modification, replacement can be carried out to these embodiments without departing from the principles and spirit of the present invention by understanding
And modification, the scope of the present invention is defined by the appended.
Claims (6)
1. the soldering processes of a kind of red copper and SiC ceramic, it is characterised in that：Include the following steps：
(1) SiC ceramic and red copper and brazing material to be welded are provided；
(2) red copper to be welded and SiC ceramic end face are cleared up, removes the impurity, greasy dirt and oxidation film on surface, utilizes height
Precision milling machine polishes red copper in SiC ceramic welding surface processing micro structure, using abrasive paper for metallograph, and red copper and SiC are made pottery
Porcelain, which is placed in acetone soln, carries out ultrasonic cleaning, finally with alcohol rinse and dries up；
(3) brazing material is placed between red copper and SiC ceramic welding surface, by red copper, SiC ceramic and brazing material with red copper
Upper, for SiC ceramic under, centre is the sequence of brazing material, is put into vacuum brazing furnace in a manner of docking；
(4) vacuum brazing furnace is warming up to 700 DEG C first with the rate of 5~12 DEG C/min, keeps the temperature 10~30min, then with 5~12
DEG C/rate of min is warming up to 800 DEG C, 10~30min of soaking time, then is cooled to 400~500 with the rate of 5~15 DEG C/min
DEG C, 5~10min of soaking time finally cools to room temperature with the furnace, completes welding.
2. the soldering processes of a kind of red copper and SiC ceramic according to claim 1, it is characterised in that：The high-precision milling
Bed selects wedge-shaped micro cutter of diamond to carry out right-angled intersection to SiC ceramic welding surface and processes to form rectangular pyramid.
3. the soldering processes of a kind of red copper and SiC ceramic according to claim 2, it is characterised in that：The rectangular pyramid
Height is 300 μm, and X-direction and Y direction spacing are 100 μm.
4. the soldering processes of a kind of red copper and SiC ceramic according to claim 3, it is characterised in that：The SiC ceramic waits for
It is every square centimeter on weldering surface to be arranged with 10000 rectangular pyramids.
5. the soldering processes of a kind of red copper and SiC ceramic according to claim 1, it is characterised in that：The brazing material
At smooth SiC ceramic surface profit visual angle less than 90 °.
6. the soldering processes of a kind of red copper and SiC ceramic according to claim 5, it is characterised in that：The brazing material
Chemical composition include Cu, Si, Al, Ti, wherein the content of Ti is 1.5~3wt%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201811054843.4A CN108890060A (en) | 2018-09-10 | 2018-09-10 | A kind of soldering processes of red copper and SiC ceramic |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201811054843.4A CN108890060A (en) | 2018-09-10 | 2018-09-10 | A kind of soldering processes of red copper and SiC ceramic |
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| CN108890060A true CN108890060A (en) | 2018-11-27 |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101935226A (en) * | 2010-08-31 | 2011-01-05 | 中国航空工业集团公司北京航空材料研究院 | Process for soldering SiO2f/SiO2 composite ceramic and metal material |
| CN104128713A (en) * | 2014-07-23 | 2014-11-05 | 北京无线电测量研究所 | Al-Si-Cu-Zn-Ti five-element foil-shaped brazing filler material made of high-volume-fraction SiCp/Al composite materials and preparing method thereof |
| CN105195847A (en) * | 2015-10-27 | 2015-12-30 | 哈尔滨工业大学 | Multi-scale combined method for improving high hard and brittle ceramic base material soldering connection strength |
| CN106312220A (en) * | 2016-10-12 | 2017-01-11 | 哈尔滨工业大学（威海） | Ceramic substrate copper cladding low-temperature connection method for power module |
-
2018
- 2018-09-10 CN CN201811054843.4A patent/CN108890060A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101935226A (en) * | 2010-08-31 | 2011-01-05 | 中国航空工业集团公司北京航空材料研究院 | Process for soldering SiO2f/SiO2 composite ceramic and metal material |
| CN104128713A (en) * | 2014-07-23 | 2014-11-05 | 北京无线电测量研究所 | Al-Si-Cu-Zn-Ti five-element foil-shaped brazing filler material made of high-volume-fraction SiCp/Al composite materials and preparing method thereof |
| CN105195847A (en) * | 2015-10-27 | 2015-12-30 | 哈尔滨工业大学 | Multi-scale combined method for improving high hard and brittle ceramic base material soldering connection strength |
| CN106312220A (en) * | 2016-10-12 | 2017-01-11 | 哈尔滨工业大学（威海） | Ceramic substrate copper cladding low-temperature connection method for power module |
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