JP2006062930A - Joined body of ceramic and metal and method of manufacturing the same - Google Patents

Joined body of ceramic and metal and method of manufacturing the same Download PDF

Info

Publication number
JP2006062930A
JP2006062930A JP2004250066A JP2004250066A JP2006062930A JP 2006062930 A JP2006062930 A JP 2006062930A JP 2004250066 A JP2004250066 A JP 2004250066A JP 2004250066 A JP2004250066 A JP 2004250066A JP 2006062930 A JP2006062930 A JP 2006062930A
Authority
JP
Japan
Prior art keywords
metal
ceramic
metallized film
active
ceramic substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2004250066A
Other languages
Japanese (ja)
Inventor
Ayafumi Ogami
純史 大上
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Metal SMI Electronics Device Inc
Original Assignee
Sumitomo Metal SMI Electronics Device Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Metal SMI Electronics Device Inc filed Critical Sumitomo Metal SMI Electronics Device Inc
Priority to JP2004250066A priority Critical patent/JP2006062930A/en
Publication of JP2006062930A publication Critical patent/JP2006062930A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Ceramic Products (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a joined body of ceramic and metal in which a skirt-like normal shaped meniscus is provided on an outer peripheral side surface part of a metallic plate, crack or the like does not occur on a ceramic substrate and high joining reliability is attained and a method of manufacturing the same. <P>SOLUTION: The joined body of the ceramic and the metal which is formed by joining the ceramic substrate 11 and the metallic plate 12 to each other with an activated blazing filler metal 13 is formed by joining the metallic plate 12 having a size smaller than that of a pattern of a metallized film 15 in the plane view to the ceramic substrate 11 through the metallized film 15 formed on the ceramic substrate 11 and the activated brazing filler metal 16 formed on the metallized film 15. The metallized film 15 is diffused in the activated brazing filler metal 13 and the skirt-shaped meniscus 14 formed so that the activated brazing filler metal 13 is wetly spread to the size equal to that of the pattern of the metallized film 15 in the cross sectional view is provided. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

本発明は、例えば、高速、大電力インバーター等パワーモジュール用基板等に使用される高放熱構造を有するセラミックと金属との接合体及びその製造方法に関し、より詳細には、セラミック基板と金属板の接合信頼性を改良したセラミックと金属との接合体及びその製造方法に関する。   The present invention relates to a ceramic and metal joined body having a high heat dissipation structure used for, for example, a power module substrate such as a high-speed, high-power inverter, and a manufacturing method thereof. The present invention relates to a bonded body of ceramic and metal with improved bonding reliability and a method for manufacturing the same.

従来より、セラミックと金属との接合体は、例えば、高速化、大電力化、高集積化が進む高熱を発生する半導体素子を実装し、半導体素子からの高熱を速やかに放熱させて半導体素子の信頼性を維持させることができるための半導体モジュール用基板等に用いられている。図３（Ａ）、（Ｂ）に示すように、従来のセラミックと金属との接合体５０は、例えば、ジルコニア入りアルミナ（Ａｌ２Ｏ３）や、窒化アルミニウム（ＡｌＮ）や、窒化珪素（Ｓｉ３Ｎ４）等の熱伝導性のよいセラミック基板５１と、Ｃｕや、Ｃｕ合金や、Ｃｕと他の金属との接合体や、Ｃｕと他の金属との複合体等からなる放熱特性に優れた金属板５２とを直接接合させることができるＡｇ−Ｃｕ−Ｔｉ系等の活性ろう材５３で接合して形成されている。このセラミックと金属との接合体５０は、金属板５２の外周側面部に活性ろう材５３で形成されるメニスカス５４を有している。 Conventionally, a joined body of ceramic and metal is, for example, mounted with a semiconductor element that generates high heat, which is increasing in speed, power, and integration, and quickly dissipates the high heat from the semiconductor element. It is used for a substrate for a semiconductor module or the like for maintaining reliability. As shown in FIGS. 3A and 3B, a conventional ceramic-metal bonded body 50 includes, for example, alumina containing zirconia (Al 2 O 3 ), aluminum nitride (AlN), or silicon nitride (Si). 3 N 4 ), etc., and excellent heat dissipation characteristics comprising a ceramic substrate 51 with good thermal conductivity, Cu, Cu alloy, a joined body of Cu and other metal, a composite of Cu and other metal, etc. The metal plate 52 is joined by an active brazing material 53 such as an Ag-Cu-Ti system that can be directly joined. The ceramic / metal bonded body 50 has a meniscus 54 formed of an active brazing material 53 on the outer peripheral side surface of a metal plate 52.

次いで、図４（Ａ）〜（Ｃ）を参照しながら、従来のセラミックと金属との接合体５０の製造方法を説明する。図４（Ａ）に示すように、従来のセラミックと金属との接合体５０の製造方法は、先ず、焼成済のセラミック基板５１の上面に活性ろう材５３用のろう材ペーストを用いて、スクリーン印刷等で金属板５２の大きさより大きいパターン大きさの活性金属ろうパターン５５を形成している。次に、図４（Ｂ）、（Ｃ）に示すように、活性金属ろうパターン５５の上面には、金属板５２を載置し、加熱して活性ろう材５３を溶融した後、冷却してセラミック基板５１と金属板５２を接合するセラミックと金属との接合体５０を作製している。この接合に際しては、活性金属ろうパターン５５が活性ろう材５３の溶融と共に、セラミック基板５１上を金属板５２側に表面張力によって若干引き寄せられるように移動して、金属板５２の外周側面部からセラミック基板５１の表面に濡れ広がった活性ろう材５３で形成されるメニスカス５４を形成している。   Next, a conventional method for manufacturing the bonded body 50 of ceramic and metal will be described with reference to FIGS. As shown in FIG. 4A, a conventional method for manufacturing a joined body 50 of ceramic and metal is as follows. First, a brazing material paste for an active brazing material 53 is used on the upper surface of a fired ceramic substrate 51 to screen. An active metal brazing pattern 55 having a pattern size larger than the size of the metal plate 52 is formed by printing or the like. Next, as shown in FIGS. 4B and 4C, a metal plate 52 is placed on the upper surface of the active metal brazing pattern 55, heated to melt the active brazing material 53, and then cooled. A joined body 50 of ceramic and metal for joining the ceramic substrate 51 and the metal plate 52 is produced. At the time of this joining, the active metal brazing pattern 55 moves on the ceramic substrate 51 so as to be slightly pulled toward the metal plate 52 side by the surface tension along with the melting of the active brazing material 53, and the ceramic from the outer peripheral side surface of the metal plate 52. A meniscus 54 formed of an active brazing material 53 spread on the surface of the substrate 51 is formed.

従来のセラミックと金属との接合体の製造方法には、セラミックの表面にＭｎ、Ｃｒ又はＴｉのうち１種又は２種以上の金属、あるいはこれらの金属を含む合金を蒸着させた後に、酸素を含んだ雰囲気にて加熱し、その後、Ａｇ−Ｃｕ−Ｔｉ系の活性ろう材を用いて、セラミックと金属とを接合する製造方法が開示されている（例えば、特許文献１参照）。   In a conventional method of manufacturing a joined body of ceramic and metal, oxygen is deposited after depositing one or more metals of Mn, Cr or Ti, or an alloy containing these metals on the surface of the ceramic. A manufacturing method is disclosed in which heating is performed in a contained atmosphere, and then a ceramic and a metal are joined using an Ag—Cu—Ti-based active brazing material (see, for example, Patent Document 1).

特許第２５４１８３７号公報Japanese Patent No. 2541837

しかしながら、前述したような従来のセラミックと金属との接合体及びその製造方法は、次のような問題がある。
（１）活性ろう材のセラミックとの濡れ性は、特に、高純度のセラミックの場合には充分でなく、活性ろう材の溶融時の表面張力によってセラミック基板上で移動が発生するので、メニスカス形状が金属板の外周側面部に沿って平面視してリアス式状に不規則となると共に、断面視して裾野状の正常な形状とはかけ離れた凸状に湾曲した形状となり、活性ろう材の凝固後にセラミック基板にクラック等の不具合を発生させる場合がある。
（２）セラミック基板の表面にＭｎ、Ｃｒ又はＴｉのうち１種又は２種以上の金属、あるいはこれらの金属を含む合金の酸化膜層を形成し、この層と活性ろう材を接合させる場合には、セラミックと結合しやすい活性ろう材中のＴｉが直接セラミックと接するのでなく、酸化膜層を介して接合することとなり、セラミックと酸化膜層の接合強度や、酸化膜層と活性ろう材の接合強度の信頼性が充分でなく、層間剥離の危険性を有している。
本発明は、かかる事情に鑑みてなされたものであって、裾野状の正常な形状のメニスカスを金属板外周側面部に有し、セラミック基板にクラック等の発生のない、接合信頼性の高いセラミックと金属との接合体及びその製造方法を提供することを目的とする。 However, the conventional ceramic-metal bonded body and the manufacturing method thereof as described above have the following problems.
(1) The wettability of the active brazing material with the ceramic is not sufficient particularly in the case of a high-purity ceramic, and movement occurs on the ceramic substrate due to the surface tension at the time of melting of the active brazing material. Is irregularly shaped in a rias form as viewed in plan along the outer peripheral side surface of the metal plate, and is curved in a convex shape that is far from the normal shape of the skirt shape in cross section. In some cases, a defect such as a crack is generated in the ceramic substrate after solidification.
(2) When forming an oxide film layer of one or more metals of Mn, Cr or Ti, or an alloy containing these metals on the surface of the ceramic substrate, and bonding this layer to the active brazing material The Ti in the active brazing material that is easily bonded to the ceramic is not directly in contact with the ceramic, but is bonded through the oxide film layer. The bonding strength between the ceramic and the oxide film layer, the oxide film layer and the active brazing material The reliability of the bonding strength is not sufficient and there is a risk of delamination.
The present invention has been made in view of such circumstances, and has a base-like normal meniscus on the outer peripheral side surface of the metal plate, and has no bonding cracks and the like, and has high bonding reliability. It is an object to provide a bonded body of metal and a metal and a method for manufacturing the same.

前記目的に沿う本発明に係るセラミックと金属との接合体は、セラミック基板と金属板が活性金属ろうで接合されるセラミックと金属との接合体において、セラミック基板に形成されるメタライズ膜と、メタライズ膜上に形成される活性ろう材を介して、メタライズ膜のパターン大きさより平面視して小さい大きさを有する金属板がセラミック基板に接合されて有し、活性金属ろう中にはメタライズ膜が拡散していると共に、メタライズ膜のパターン大きさまで活性金属ろうが濡れ広がっている断面視して裾野形状のメニスカスを有する。
ここで、セラミックと金属との接合体は、メタライズ膜がＡｕスパッタ膜、ガラス入りＡｇ−Ｐｔ印刷焼成膜、又は無電解Ｃｕめっき膜からなるのがよい。
また、セラミックと金属との接合体は、活性ろう材がＡｇ−Ｃｕ−Ｔｉ−Ｉｎ系からなり、セラミック基板と金属板が活性ろう材の真空ろう付けで接合されているのがよい。 A ceramic / metal joined body according to the present invention that meets the above-mentioned object is a ceramic / metal joined body in which a ceramic substrate and a metal plate are joined by an active metal brazing, and a metallized film formed on the ceramic substrate, and a metallized film. Through the active brazing material formed on the film, a metal plate having a size smaller than that of the metallized film in plan view is bonded to the ceramic substrate, and the metallized film diffuses into the active metal brazing. In addition, it has a skirt-shaped meniscus in cross-sectional view in which the active metal braze is wet and spread to the pattern size of the metallized film.
Here, in the joined body of ceramic and metal, the metallized film is preferably made of an Au sputtered film, an Ag-Pt printed fired film containing glass, or an electroless Cu plated film.
In the joined body of ceramic and metal, the active brazing material is preferably made of Ag-Cu-Ti-In, and the ceramic substrate and the metal plate are preferably joined by vacuum brazing of the active brazing material.

前記目的に沿う本発明に係るセラミックと金属との接合体の製造方法は、セラミック基板と金属板を活性ろう材を用いて接合するセラミックと金属との接合体の製造方法において、セラミック基板に平面視して金属板の大きさを超えるパターン大きさを有するメタライズ膜を形成する工程と、メタライズ膜上に活性ろう材を介して金属板を載置し、真空中で加熱して活性ろう材中にメタライズ膜を拡散させる活性金属ろうでセラミック基板と金属板を接合する工程を有する。
ここで、セラミックと金属との接合体の製造方法は、活性金属ろうをメタライズ膜のパターン大きさまで濡れ広がらせるのがよい。 A method for manufacturing a joined body of ceramic and metal according to the present invention in accordance with the above object is a method for manufacturing a joined body of ceramic and metal in which a ceramic substrate and a metal plate are joined using an active brazing material. A step of forming a metallized film having a pattern size exceeding the size of the metal plate, and placing the metal plate on the metallized film via an active brazing material, and heating in a vacuum in the active brazing material And a step of bonding the ceramic substrate and the metal plate with an active metal brazing material that diffuses the metallized film.
Here, in the method of manufacturing the joined body of ceramic and metal, it is preferable that the active metal brazing is wetted and spread to the pattern size of the metallized film.

請求項１及びこれに従属する請求項２又は３記載のセラミックと金属との接合体は、セラミック基板に形成されるメタライズ膜と、メタライズ膜上に形成される活性ろう材を介して、メタライズ膜のパターン大きさより平面視して小さい大きさを有する金属板がセラミック基板に接合されて有し、活性金属ろう中にはメタライズ膜が拡散していると共に、メタライズ膜のパターン大きさまで活性金属ろうが濡れ広がっている断面視して裾野形状のメニスカスを有するので、メタライズ膜が形成されていることによって、溶融した活性ろう材は、セラミック基板表面で濡れやすくなっており、活性ろう材の溶融時の表面張力による移動が起こりにくくなって、メニスカスの稜線が裾野形状の正常な曲線形状となり、平面視して金属板外周側面部全周にわたって略均一に形成されて、熱応力を低減でき、セラミック基板にクラック等の発生を防止することができる。また、メタライズ膜は、厚さが薄いので、溶融した活性ろう材中にメタライズ膜が拡散し易いと同時に、Ｔｉ等の活性金属がセラミック基板表面に集まって活性ろう材とセラミック基板との接着層を形成し、メタライズ膜が存在しない場合と同程度の接合強度を確保してセラミック基板と金属板の接合信頼性を向上させた接合体とすることができる。   The ceramic and metal joined body according to claim 1 and claim 2 or claim 3 dependent thereon comprises a metallized film formed on a ceramic substrate and an active brazing material formed on the metallized film. The metal plate having a size smaller than the pattern size of the metal plate is bonded to the ceramic substrate, and the metallized film is diffused in the active metal brazing and the active metal brazing is up to the pattern size of the metallized film. Since it has a hem-shaped meniscus in the cross-sectional view spreading wet, the metallized film makes it easy to wet the active brazing material on the surface of the ceramic substrate. Movement due to surface tension is less likely to occur, and the ridgeline of the meniscus becomes a normal curved shape with a skirt shape. Substantially formed uniformly over the circumference, the thermal stress can be reduced, it is possible to prevent the occurrence of cracks in the ceramic substrate. Further, since the metallized film is thin, the metallized film is easily diffused into the molten active brazing material, and at the same time, an active metal such as Ti gathers on the surface of the ceramic substrate to bond the active brazing material to the ceramic substrate. Thus, it is possible to obtain a bonded body in which the bonding reliability of the same level as that in the case where the metallized film is not present is ensured and the bonding reliability between the ceramic substrate and the metal plate is improved.

特に、請求項２記載のセラミックと金属との接合体は、メタライズ膜がＡｕスパッタ膜、ガラス入りＡｇ−Ｐｔ印刷焼成膜、又は無電解Ｃｕめっき膜からなるので、メタライズ膜を活性ろう材中に容易に拡散させた活性金属ろうとすることができ、セラミック基板と金属板の接合強度を向上させた接合体とすることができる。   In particular, in the joined body of ceramic and metal according to claim 2, the metallized film is made of an Au sputtered film, a glass-filled Ag-Pt printed fired film, or an electroless Cu plated film. The active metal braze can be easily diffused, and a bonded body with improved bonding strength between the ceramic substrate and the metal plate can be obtained.

また、特に、請求項３記載のセラミックと金属との接合体は、活性ろう材がＡｇ−Ｃｕ−Ｔｉ−Ｉｎ系からなり、セラミック基板と金属板が活性ろう材の真空ろう付けで接合されているので、メタライズ膜がＡｕスパッタ膜、ガラス入りＡｇ−Ｐｔ印刷焼成膜、又は無電解Ｃｕめっき膜であっても、親和性の高い活性ろう材であり、容易に活性ろう材中にメタライズ膜を拡散させた活性金属ろうで接合する接合体とすることができる。   In particular, in the joined body of ceramic and metal according to claim 3, the active brazing material is made of an Ag-Cu-Ti-In system, and the ceramic substrate and the metal plate are joined by vacuum brazing of the active brazing material. Therefore, even if the metallized film is an Au sputtered film, a glass-filled Ag-Pt printed fired film, or an electroless Cu plated film, it is an active brazing material with high affinity, and a metallized film can be easily incorporated into the active brazing material. It can be set as the joined body joined with the diffused active metal brazing.

請求項４及びこれに従属する請求項５記載のセラミックと金属との接合体の製造方法は、セラミック基板に平面視して金属板の大きさを超えるパターン大きさを有するメタライズ膜を形成する工程と、メタライズ膜上に活性ろう材を介して金属板を載置し、真空中で加熱して活性ろう材中にメタライズ膜を拡散させる活性金属ろうでセラミック基板と金属板を接合する工程を有するので、メタライズ膜に酸化膜を形成させることなく活性ろう材中にメタライズ膜を拡散させることができ、金属板より大きいメタライズ膜とで、なだらかな裾野状の正常なメニスカスを形成するセラミックと金属との接合体の製造方法を提供できる。   The method of manufacturing a joined body of ceramic and metal according to claim 4 and claim 5 dependent thereon, the step of forming a metallized film having a pattern size exceeding the size of the metal plate in plan view on the ceramic substrate And mounting a metal plate on the metallized film through an active brazing material and heating the substrate in a vacuum to diffuse the metalized film in the active brazing material and joining the ceramic substrate and the metal plate. Therefore, the metallized film can be diffused in the active brazing material without forming an oxide film on the metallized film, and the metal and the metallized film larger than the metal plate can form a gentle skirt-like normal meniscus and metal. A method for manufacturing the joined body can be provided.

特に、請求項５記載のセラミックと金属との接合体の製造方法は、活性金属ろうをメタライズ膜のパターン大きさまで濡れ広がらせるので、金属板の外周側面部が平面視してリアス式状ではなく、断面視してなだらかな裾野状の正常なメニスカスを形成するセラミックと金属との接合体の製造方法を提供できる。   In particular, the method for manufacturing a joined body of ceramic and metal according to claim 5 wets and spreads the active metal braze to the pattern size of the metallized film. In addition, it is possible to provide a method of manufacturing a joined body of ceramic and metal that forms a normal meniscus having a gentle skirt shape in cross section.

続いて、添付した図面を参照しつつ、本発明を具体化した実施するための最良の形態について説明し、本発明の理解に供する。
ここに、図１（Ａ）、（Ｂ）はそれぞれ本発明の一実施の形態に係るセラミックと金属との接合体の説明図、図２（Ａ）〜（Ｄ）はそれぞれ同セラミックと金属との接合体の製造方法の説明図である。 Subsequently, the best mode for carrying out the present invention will be described with reference to the accompanying drawings to provide an understanding of the present invention.
Here, FIGS. 1A and 1B are explanatory diagrams of a joined body of a ceramic and a metal according to an embodiment of the present invention, respectively, and FIGS. 2A to 2D are respectively a ceramic and a metal. It is explanatory drawing of the manufacturing method of this conjugate | zygote.

図１（Ａ）、（Ｂ）を参照しながら、本発明の一実施の形態に係るセラミックと金属との接合体１０を説明する。ここで、図１（Ａ）はセラミックと金属との接合体１０の一部平面図、図１（Ｂ）は図１（Ａ）におけるＡ−Ａ’線縦断面図である。
図１（Ａ）、（Ｂ）に示すように、本発明の一実施の形態に係るセラミックと金属との接合体１０は、セラミック基板１１と、金属板１２とを、Ｔｉ等の活性金属を含む活性金属ろう１３で接合して形成されている。このセラミックと金属との接合体１０に使用されるセラミック基板１１には、例えば、ジルコニア入りアルミナセラミックや、窒化アルミニウムセラミックや、窒化珪素セラミック等の熱伝導性のよく、例えば、高熱を発生する半導体素子を実装しても、半導体素子からの高熱を速やかに熱伝導させることができるセラミックを板状にしたものが用いられている。また、セラミックと金属との接合体１０に使用される金属板１２には、例えば、Ｃｕや、Ｃｕ合金や、Ｃｕと他の金属との接合体や、Ｃｕと他の金属との複合体等の熱伝導性に優れた金属を板状にしたものが用いられている。 With reference to FIGS. 1A and 1B, a ceramic / metal bonded body 10 according to an embodiment of the present invention will be described. Here, FIG. 1A is a partial plan view of a joined body 10 of ceramic and metal, and FIG. 1B is a longitudinal sectional view taken along line AA ′ in FIG.
As shown in FIGS. 1A and 1B, a ceramic / metal bonded body 10 according to an embodiment of the present invention includes a ceramic substrate 11, a metal plate 12, and an active metal such as Ti. It is formed by joining with an active metal brazing 13 containing. The ceramic substrate 11 used for the ceramic-metal bonded body 10 has a good thermal conductivity, such as a zirconia-containing alumina ceramic, an aluminum nitride ceramic, or a silicon nitride ceramic, for example, a semiconductor that generates high heat. Even when the element is mounted, a ceramic plate that can quickly conduct high heat from the semiconductor element is used. The metal plate 12 used for the ceramic-metal bonded body 10 includes, for example, Cu, Cu alloys, bonded bodies of Cu and other metals, composites of Cu and other metals, and the like. A plate made of a metal having excellent thermal conductivity is used.

セラミックと金属との接合体１０は、セラミック基板１１に、メタライズ膜１５（図２（Ａ）参照）のパターン大きさより平面視して小さい大きさを有する金属板１２が、予め、セラミック基板１１の表面に形成されているメタライズ膜１５と、このメタライズ膜１５上に形成されている活性ろう材１６（図２（Ｂ）参照）を介して加熱されることで、活性ろう材１６を溶融した後、冷却させた活性金属ろう１３で接合されて有している。このセラミックと金属との接合体１０は、活性金属ろう１３中に、上記のメタライズ膜１５が加熱によって拡散していると共に、メタライズ膜１５のパターン大きさまで活性金属ろう１３が濡れ広がっている断面視して稜線がなだらかな裾野形状となるメニスカス１４を有している。セラミック基板１１に予め形成されるメタライズ膜１５は、薄い膜で形成されているので、溶融した活性ろう材１６中に容易に拡散させることができる共に、メタライズ膜１５によって、溶融した活性ろう材１６がセラミック基板１１表面で濡れやすく、活性ろう材１６の溶融時の表面張力による移動を阻害するように作用し、平面視して金属板１２外周側面部全周にわたって略均一に稜線が裾野形状の正常な曲線形状のメニスカス１４を形成することができる。従って、セラミックと金属との接合体１０は、セラミック基板１１と活性金属ろう１３のメニスカス１４の裾野端部周辺で発生する熱応力を低減でき、セラミック基板１１にクラック等の発生を防止することができる。また、セラミックと金属との接合体１０は、メタライズ膜１５の厚さが薄いので、溶融した活性ろう材１６中にメタライズ膜１４を拡散させ易いと同時に、Ｔｉ等の活性金属がセラミック基板１１との界面にも形成されて活性金属ろう１３の接着層を形成し、メタライズ膜１５が存在しない場合と同程度の接合強度を確保することができる。   In the ceramic-metal bonded body 10, a metal plate 12 having a size smaller than that of the metallized film 15 (see FIG. 2A) in plan view is previously formed on the ceramic substrate 11. After the active brazing material 16 is melted by being heated through the metallized film 15 formed on the surface and the active brazing material 16 (see FIG. 2B) formed on the metallized film 15. And joined with a cooled active metal braze 13. This ceramic / metal bonded body 10 has a cross-sectional view in which the metallized film 15 is diffused by heating in the active metal braze 13 and the active metal braze 13 is spread to the pattern size of the metallized film 15. Thus, the meniscus 14 has a skirt shape with a gentle ridgeline. Since the metallized film 15 formed in advance on the ceramic substrate 11 is formed of a thin film, it can be easily diffused into the molten active brazing material 16, and the molten active brazing material 16 is melted by the metallized film 15. Is easy to wet on the surface of the ceramic substrate 11, acts to inhibit movement due to surface tension at the time of melting of the active brazing filler metal 16, and has a ridge line that is substantially uniform over the entire circumference of the outer peripheral side surface of the metal plate 12 in plan view. A normal curved meniscus 14 can be formed. Therefore, the ceramic-metal bonded body 10 can reduce the thermal stress generated around the bottom end of the meniscus 14 of the ceramic substrate 11 and the active metal brazing 13 and prevent the ceramic substrate 11 from being cracked. it can. Further, since the metallized film 15 is thin in the ceramic-metal bonded body 10, it is easy to diffuse the metallized film 14 into the molten active brazing material 16, and at the same time, an active metal such as Ti is bonded to the ceramic substrate 11. The adhesive layer of the active metal braze 13 is formed at the interface of the metal, so that the same bonding strength as when the metallized film 15 is not present can be secured.

セラミックと金属との接合体１０に用いられるメタライズ膜１５は、Ａｕスパッタ膜、ガラス入りＡｇ−Ｐｔ印刷焼成膜、又は無電解Ｃｕめっき膜からなるのがよい。これらのいずれのメタライズ膜１５も薄い膜厚さにすることができると共に、活性ろう材１６中に容易に拡散させることができる金属成分であるので、セラミックと金属との接合体１０は、良好なメニスカス１４を有する接合強度の高い接合体とすることができる。なお、Ａｕスパッタ膜は、厚さを８００オングストローム程度の薄いメタライズ膜１５とすることができ、容易に活性ろう材１６中に拡散させることができる。また、ガラス入りＡｇ−Ｐｔ印刷焼成膜は、Ａｇ−Ｐｔペーストをセラミック基板１１に印刷した後、大気中８００℃程度で焼成するメタライズ膜１５とするが、活性ろう材１６の溶融時の温度が８００℃程度であるので再度メタライズ膜１５を溶融させながら活性ろう材１６中に拡散させることができる。更に、無電解Ｃｕめっき膜は、厚さを１μｍ程度の薄いメタライズ膜１５とすることができ、容易に活性ろう材１６中に拡散させることができる。   The metallized film 15 used for the ceramic-metal bonded body 10 is preferably made of an Au sputtered film, a glass-filled Ag-Pt printed fired film, or an electroless Cu plated film. Since any of these metallized films 15 can be made thin, and is a metal component that can be easily diffused into the active brazing material 16, the joined body 10 of ceramic and metal is excellent. A bonded body having a meniscus 14 and high bonding strength can be obtained. The Au sputtered film can be a thin metallized film 15 having a thickness of about 800 angstroms and can be easily diffused into the active brazing material 16. Further, the Ag-Pt printed fired film containing glass is a metallized film 15 that is fired at about 800 ° C. in the atmosphere after the Ag—Pt paste is printed on the ceramic substrate 11. Since the temperature is about 800 ° C., the metallized film 15 can be diffused into the active brazing material 16 while being melted again. Furthermore, the electroless Cu plating film can be a thin metallized film 15 having a thickness of about 1 μm and can be easily diffused into the active brazing material 16.

セラミックと金属との接合体１０に用いられる活性ろう材１６は、Ａｇ−Ｃｕ−Ｔｉ−Ｉｎ系からなり、セラミック基板１１と金属板１２は、この活性ろう材１６を真空中で溶融する真空ろう付けで接合されているのがよい。活性ろう材１６がＡｇ−Ｃｕ−Ｔｉ−Ｉｎ系からなることは、Ａｕスパッタ膜、ガラス入りＡｇ−Ｐｔ印刷焼成膜、又は無電解Ｃｕめっき膜といずれも親和性を高くすることができるので、活性ろう材１６中にそれぞれ容易に拡散させることができる。   The active brazing material 16 used for the joined body 10 of ceramic and metal is made of Ag-Cu-Ti-In, and the ceramic substrate 11 and the metal plate 12 are vacuum brazing that melts the active brazing material 16 in a vacuum. It is good that they are joined together. Since the active brazing filler metal 16 is made of an Ag—Cu—Ti—In system, it is possible to increase the affinity of any of an Au sputtered film, a glass-filled Ag—Pt printed fired film, or an electroless Cu plated film. Each can be easily diffused into the active brazing material 16.

次いで、図２（Ａ）〜（Ｄ）を参照しながら、本発明の一実施の形態に係るセラミックと金属との接合体１０の製造方法を説明する。
図２（Ａ）に示すように、ジルコニア入りアルミナセラミックや、窒化アルミニウムセラミックや、窒化珪素セラミック等からなる焼成済みのセラミック基板１１には、平面視した場合にＣｕや、Ｃｕ合金や、Ｃｕと他の金属との接合体や、Ｃｕと他の金属との複合体等からなる板状の金属板１２の大きさを超えるパターン大きさを有するメタライズ膜１５を、Ａｕのスパッタリング法や、Ａｇ−Ｐｔペーストの厚膜印刷焼成法や、Ｃｕの無電解めっき法等で形成する。 Next, with reference to FIGS. 2 (A) to 2 (D), a method for manufacturing the joined body 10 of ceramic and metal according to an embodiment of the present invention will be described.
As shown in FIG. 2A, the sintered ceramic substrate 11 made of alumina ceramic containing zirconia, aluminum nitride ceramic, silicon nitride ceramic or the like has Cu, Cu alloy, Cu and A metallized film 15 having a pattern size exceeding the size of a plate-like metal plate 12 made of a joined body with another metal, a composite of Cu and another metal, or the like is formed by sputtering of Au or Ag- It is formed by a thick film printing and baking method of Pt paste, an electroless plating method of Cu, or the like.

次に、図２（Ｂ）に示すように、メタライズ膜１５上には、Ａｇ−Ｃｕ−Ｔｉ−Ｉｎ系等からなる活性ろう材１６をスクリーン印刷法等でメタライズ膜１５のパターン大きさと実質的に同じパターン大きさで形成する。そして、図２（Ｃ）に示すように、メタライズ膜１５上には、更に、この活性ろう材１６を介して金属板１２を載置し、例えば、１０−５Ｔｏｒｒの真空中で約８００℃程度の温度で加熱している。この加熱によって、図２（Ｄ）に示すように、セラミック基板１１と金属板１２は、溶融した活性ろう材１６中にメタライズ膜１５を拡散させた活性金属ろう１３で接合してセラミックと金属との接合体１０を作製している。 Next, as shown in FIG. 2B, on the metallized film 15, an active brazing material 16 made of Ag-Cu-Ti-In or the like is substantially equal to the pattern size of the metallized film 15 by screen printing or the like. Are formed with the same pattern size. Then, as shown in FIG. 2C, a metal plate 12 is further placed on the metallized film 15 via the active brazing material 16, and is about 800 ° C. in a vacuum of 10 −5 Torr, for example. It is heated at a moderate temperature. By this heating, as shown in FIG. 2D, the ceramic substrate 11 and the metal plate 12 are joined by the active metal brazing 13 in which the metallized film 15 is diffused in the molten active brazing material 16, and the ceramic and the metal are bonded. The joined body 10 is produced.

このセラミックと金属との接合体１０の製造方法では、活性金属ろう１３を金属板１２の外周側面部からメタライズ膜１５のパターン大きさまで濡れ広がらせるのがよい。この方法で容易に形成された裾野形状のメニスカス１４によって、セラミック基板１１には、熱応力によるクラックの発生を防止することができる。   In the method for manufacturing the ceramic-metal bonded body 10, the active metal brazing 13 is preferably wetted from the outer peripheral side surface of the metal plate 12 to the pattern size of the metallized film 15. The base-shaped meniscus 14 easily formed by this method can prevent the ceramic substrate 11 from being cracked due to thermal stress.

本発明のセラミックと金属との接合体及びその製造方法は、パワーモジュール用等の半導体素子が実装され、半導体素子からの高発熱を速やかに放熱させるための高放熱特性を必要として、発熱に対する高信頼性の確保が要求される各種民生機器用や、自動車、電気自動車等の車載用等として、及びそれらを作製する方法として多く用いられている。   The ceramic / metal bonded body of the present invention and the manufacturing method thereof require a high heat dissipation characteristic for quickly dissipating the high heat generation from the semiconductor element on which a semiconductor element for a power module or the like is mounted. It is widely used for various consumer devices that require ensuring reliability, and for vehicles such as automobiles and electric vehicles, and as a method for producing them.

（Ａ）、（Ｂ）はそれぞれ本発明の一実施の形態に係るセラミックと金属との接合体の説明図である。(A), (B) is explanatory drawing of the joined body of the ceramic and metal which concern on one embodiment of this invention, respectively. （Ａ）〜（Ｄ）はそれぞれ同セラミックと金属との接合体の製造方法の説明図である。(A)-(D) are explanatory drawings of the manufacturing method of the joined body of the ceramic and metal, respectively. （Ａ）、（Ｂ）はそれぞれ従来のセラミックと金属との接合体の説明図である。(A), (B) is explanatory drawing of the joined body of the conventional ceramic and metal, respectively. （Ａ）〜（Ｃ）はそれぞれ同セラミックと金属との接合体の製造方法の説明図である。(A)-(C) are explanatory drawings of the manufacturing method of the joined body of the ceramic and metal, respectively.

符号の説明Explanation of symbols

１０：セラミックと金属との接合体、１１：セラミック基板、１２：金属板、１３：活性金属ろう、１４：メニスカス、１５：メタライズ膜、１６：活性ろう材   10: Ceramic / metal joined body, 11: Ceramic substrate, 12: Metal plate, 13: Active metal brazing, 14: Meniscus, 15: Metallized film, 16: Active brazing material

Claims (5)

セラミック基板と金属板が活性金属ろうで接合されるセラミックと金属との接合体において、
前記セラミック基板に形成されるメタライズ膜と、該メタライズ膜上に形成される活性ろう材を介して、前記メタライズ膜のパターン大きさより平面視して小さい大きさを有する前記金属板が前記セラミック基板に接合されて有し、前記活性金属ろう中には前記メタライズ膜が拡散していると共に、前記メタライズ膜のパターン大きさまで前記活性金属ろうが濡れ広がっている断面視して裾野形状のメニスカスを有することを特徴とするセラミックと金属との接合体。 In a ceramic / metal joined body in which a ceramic substrate and a metal plate are joined with an active metal brazing,
Through the metallized film formed on the ceramic substrate and the active brazing material formed on the metallized film, the metal plate having a size smaller than that of the metallized film in plan view is formed on the ceramic substrate. The metallized film is diffused in the active metal braze and has a skirt-shaped meniscus in cross-section in which the active metal braze is wet and spread to the pattern size of the metallized film. A ceramic and metal joint characterized by 請求項１記載のセラミックと金属との接合体において、前記メタライズ膜がＡｕスパッタ膜、ガラス入りＡｇ−Ｐｔ印刷焼成膜、又は無電解Ｃｕめっき膜からなることを特徴とするセラミックと金属との接合体。   2. The ceramic-metal joint according to claim 1, wherein the metallized film is made of an Au sputtered film, a glass-filled Ag-Pt printed fired film, or an electroless Cu plated film. body. 請求項１又は２記載のセラミックと金属との接合体において、前記活性ろう材がＡｇ−Ｃｕ−Ｔｉ−Ｉｎ系からなり、前記セラミック基板と前記金属板が前記活性ろう材の真空ろう付けで接合されていることを特徴とするセラミックと金属との接合体。   3. The joined body of ceramic and metal according to claim 1 or 2, wherein the active brazing material is made of an Ag-Cu-Ti-In system, and the ceramic substrate and the metal plate are joined by vacuum brazing of the active brazing material. A ceramic / metal joined body characterized by being made. セラミック基板と金属板を活性ろう材を用いて接合するセラミックと金属との接合体の製造方法において、
前記セラミック基板に平面視して前記金属板の大きさを超えるパターン大きさを有するメタライズ膜を形成する工程と、
前記メタライズ膜上に前記活性ろう材を介して前記金属板を載置し、真空中で加熱して前記活性ろう材中に前記メタライズ膜を拡散させる活性金属ろうで前記セラミック基板と前記金属板を接合する工程を有することを特徴とするセラミックと金属との接合体の製造方法。 In the manufacturing method of the joined body of ceramic and metal in which the ceramic substrate and the metal plate are joined using the active brazing material,
Forming a metallized film having a pattern size exceeding the size of the metal plate in plan view on the ceramic substrate;
The metal plate is placed on the metallized film via the active brazing material, and the ceramic substrate and the metal plate are made of active metal brazing that diffuses the metallized film into the active brazing material by heating in vacuum. A method for producing a joined body of ceramic and metal, comprising a step of joining. 請求項４記載のセラミックと金属との接合体の製造方法において、前記活性金属ろうを前記メタライズ膜のパターン大きさまで濡れ広がらせることを特徴とするセラミックと金属との接合体の製造方法。   5. The method for manufacturing a joined body of ceramic and metal according to claim 4, wherein the active metal braze is wetted and spread to a pattern size of the metallized film.
JP2004250066A 2004-08-30 2004-08-30 Joined body of ceramic and metal and method of manufacturing the same Pending JP2006062930A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004250066A JP2006062930A (en) 2004-08-30 2004-08-30 Joined body of ceramic and metal and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004250066A JP2006062930A (en) 2004-08-30 2004-08-30 Joined body of ceramic and metal and method of manufacturing the same

Publications (1)

Publication Number Publication Date
JP2006062930A true JP2006062930A (en) 2006-03-09

Family

ID=36109725

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004250066A Pending JP2006062930A (en) 2004-08-30 2004-08-30 Joined body of ceramic and metal and method of manufacturing the same

Country Status (1)

Country Link
JP (1) JP2006062930A (en)

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007053349A (en) * 2005-07-20 2007-03-01 Mitsubishi Materials Corp Insulating substrate and manufacturing method thereof as well as power module and substrate thereof
JP2012049379A (en) * 2010-08-27 2012-03-08 Kyocera Corp Circuit board and electronic apparatus
US8188376B2 (en) 2004-08-17 2012-05-29 Mitsubishi Materials Corporation Insulation substrate, power module substrate, manufacturing method thereof, and power module using the same
JP2014022514A (en) * 2012-07-17 2014-02-03 Kyocera Corp Substrate for mounting electronic element and electronic device using the same
WO2015019602A1 (en) * 2013-08-08 2015-02-12 株式会社 東芝 Circuit substrate and semiconductor device
WO2016171530A1 (en) * 2015-04-24 2016-10-27 주식회사 아모센스 Ceramic substrate manufacturing method and ceramic substrate manufactured thereby
KR20160131913A (en) * 2015-05-06 2016-11-16 주식회사 아모센스 Ceramic Board Manufacturing Method and Ceramic Board manufactured by thereof
KR20160132781A (en) * 2015-05-11 2016-11-21 주식회사 아모센스 Ceramic Board Manufacturing Method and Ceramic Board manufactured by thereof
CN106312220A (en) * 2016-10-12 2017-01-11 哈尔滨工业大学（威海） Ceramic substrate copper cladding low-temperature connection method for power module
CN106312361A (en) * 2016-10-12 2017-01-11 哈尔滨工业大学（威海） Ceramic substrate and copper clad foil low-temperature connecting soldering paste and production process thereof
KR20170060523A (en) * 2015-11-24 2017-06-01 주식회사 아모센스 Ceramic Board Manufacturing Method and Ceramic Board manufactured by thereof
JP2017138175A (en) * 2016-02-03 2017-08-10 日本分析工業株式会社 Thermal decomposition sample tube for gas chromatograph and thermal decomposition sample introduction device for gas chromatograph
KR20180009615A (en) * 2016-07-19 2018-01-29 주식회사 아모센스 Ceramic board manufacturing method and ceramic board manufactured by thereof
KR101856109B1 (en) * 2015-04-24 2018-05-09 주식회사 아모센스 Ceramic Board Manufacturing Method and Ceramic Board manufactured by thereof
KR101856108B1 (en) * 2015-04-24 2018-05-09 주식회사 아모센스 Ceramic Board Manufacturing Method and Ceramic Board manufactured by thereof
KR101856107B1 (en) * 2015-04-24 2018-05-09 주식회사 아모센스 Ceramic Board Manufacturing Method and Ceramic Board manufactured by thereof
KR101856106B1 (en) * 2015-04-24 2018-05-09 주식회사 아모센스 Ceramic Board Manufacturing Method and Ceramic Board manufactured by thereof

Cited By (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8188376B2 (en) 2004-08-17 2012-05-29 Mitsubishi Materials Corporation Insulation substrate, power module substrate, manufacturing method thereof, and power module using the same
JP2007053349A (en) * 2005-07-20 2007-03-01 Mitsubishi Materials Corp Insulating substrate and manufacturing method thereof as well as power module and substrate thereof
JP2012049379A (en) * 2010-08-27 2012-03-08 Kyocera Corp Circuit board and electronic apparatus
JP2014022514A (en) * 2012-07-17 2014-02-03 Kyocera Corp Substrate for mounting electronic element and electronic device using the same
CN105452194B (en) * 2013-08-08 2017-05-03 株式会社东芝 Circuit substrate and semiconductor device
CN105452194A (en) * 2013-08-08 2016-03-30 株式会社东芝 Circuit substrate and semiconductor device
WO2015019602A1 (en) * 2013-08-08 2015-02-12 株式会社 東芝 Circuit substrate and semiconductor device
JPWO2015019602A1 (en) * 2013-08-08 2017-03-02 株式会社東芝 Circuit board and semiconductor device
KR101805325B1 (en) * 2013-08-08 2017-12-05 가부시끼가이샤 도시바 Circuit substrate and semiconductor device
WO2016171530A1 (en) * 2015-04-24 2016-10-27 주식회사 아모센스 Ceramic substrate manufacturing method and ceramic substrate manufactured thereby
CN107889559B (en) * 2015-04-24 2020-04-28 阿莫善斯有限公司 Method for manufacturing ceramic substrate and ceramic substrate manufactured thereby
US10529646B2 (en) 2015-04-24 2020-01-07 Amosense Co., Ltd. Methods of manufacturing a ceramic substrate and ceramic substrates
KR101856106B1 (en) * 2015-04-24 2018-05-09 주식회사 아모센스 Ceramic Board Manufacturing Method and Ceramic Board manufactured by thereof
CN107889559A (en) * 2015-04-24 2018-04-06 阿莫善斯有限公司 The manufacture method of ceramic substrate and as the ceramic substrate manufactured by it
KR101856107B1 (en) * 2015-04-24 2018-05-09 주식회사 아모센스 Ceramic Board Manufacturing Method and Ceramic Board manufactured by thereof
KR101856108B1 (en) * 2015-04-24 2018-05-09 주식회사 아모센스 Ceramic Board Manufacturing Method and Ceramic Board manufactured by thereof
KR101856109B1 (en) * 2015-04-24 2018-05-09 주식회사 아모센스 Ceramic Board Manufacturing Method and Ceramic Board manufactured by thereof
KR20160131913A (en) * 2015-05-06 2016-11-16 주식회사 아모센스 Ceramic Board Manufacturing Method and Ceramic Board manufactured by thereof
KR102518645B1 (en) * 2015-05-06 2023-04-12 주식회사 아모센스 Ceramic Board Manufacturing Method
KR20160132781A (en) * 2015-05-11 2016-11-21 주식회사 아모센스 Ceramic Board Manufacturing Method and Ceramic Board manufactured by thereof
KR102518646B1 (en) * 2015-05-11 2023-04-12 주식회사 아모센스 Ceramic Board Manufacturing Method and Ceramic Board manufactured by thereof
KR20170060523A (en) * 2015-11-24 2017-06-01 주식회사 아모센스 Ceramic Board Manufacturing Method and Ceramic Board manufactured by thereof
KR102434064B1 (en) * 2015-11-24 2022-08-22 주식회사 아모센스 Ceramic Board Manufacturing Method
JP2017138175A (en) * 2016-02-03 2017-08-10 日本分析工業株式会社 Thermal decomposition sample tube for gas chromatograph and thermal decomposition sample introduction device for gas chromatograph
KR20180009615A (en) * 2016-07-19 2018-01-29 주식회사 아모센스 Ceramic board manufacturing method and ceramic board manufactured by thereof
KR102563421B1 (en) * 2016-07-19 2023-08-07 주식회사 아모센스 Ceramic board manufacturing method
CN106312361A (en) * 2016-10-12 2017-01-11 哈尔滨工业大学（威海） Ceramic substrate and copper clad foil low-temperature connecting soldering paste and production process thereof
CN106312220A (en) * 2016-10-12 2017-01-11 哈尔滨工业大学（威海） Ceramic substrate copper cladding low-temperature connection method for power module

Similar Documents

Publication Publication Date Title
JP2006062930A (en) Joined body of ceramic and metal and method of manufacturing the same
JP5757359B2 (en) Cu / ceramic bonded body, Cu / ceramic bonded body manufacturing method, and power module substrate
JP6822247B2 (en) Manufacturing method of insulated circuit board with heat sink
KR20120062751A (en) Method for producing substrate for power module with heat sink, substrate for power module with heat sink, and power module
JP6475703B2 (en) Method for producing a metal / ceramic solder joint
JP4014528B2 (en) Heat spreader module manufacturing method and heat spreader module
JP5423076B2 (en) Power module substrate, power module, and method of manufacturing power module substrate
JPH08255973A (en) Ceramic circuit board
JP2011119652A (en) Method for producing substrate for power module with heat sink, substrate for power module with heat sink, and power module
JP6031784B2 (en) Power module substrate and manufacturing method thereof
JP4951932B2 (en) Power module substrate manufacturing method
KR101774586B1 (en) Manufacturing method of substrate for power module equiptted with heat sink, substrate for power module equiptted with heat sink, and power module
JP4387658B2 (en) Ceramic circuit board with heat sink and manufacturing method thereof
JP5310309B2 (en) Solder coat lid
JP3192911B2 (en) Ceramic circuit board
JP4571853B2 (en) Wiring board
JP4471470B2 (en) Semiconductor device
JP2005050886A (en) Compound substrate and its manufacturing method
JP3934966B2 (en) Ceramic circuit board
TWI780113B (en) METHOD OF MANUFACTURING CERAMIC/Al-SiC COMPOSITE MATERIAL BONDED BODY AND METHOD OF MANUFACTURING POWER MODULE SUBSTRATE WITH HEAT SINK
JP2001267447A (en) Ceramic circuit board and semiconductor device
JPH10247696A (en) Metal lid for hermetically sealing semiconductor package
JP5691580B2 (en) Manufacturing apparatus and manufacturing method for power module substrate
JP4556307B2 (en) Power module and method for manufacturing power module cushioning material
JP4295409B2 (en) Manufacturing method of ceramic circuit board