CN106298531A - The manufacture method of rf-ldmos quasiconductor - Google Patents
The manufacture method of rf-ldmos quasiconductor Download PDFInfo
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- CN106298531A CN106298531A CN201510297235.6A CN201510297235A CN106298531A CN 106298531 A CN106298531 A CN 106298531A CN 201510297235 A CN201510297235 A CN 201510297235A CN 106298531 A CN106298531 A CN 106298531A
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- 238000000034 method Methods 0.000 title claims abstract description 64
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 42
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 16
- 150000002500 ions Chemical class 0.000 claims description 65
- -1 boron ion Chemical class 0.000 claims description 26
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 22
- 229920005591 polysilicon Polymers 0.000 claims description 21
- HAYXDMNJJFVXCI-UHFFFAOYSA-N arsenic(5+) Chemical compound [As+5] HAYXDMNJJFVXCI-UHFFFAOYSA-N 0.000 claims description 13
- 229910052796 boron Inorganic materials 0.000 claims description 13
- OKZIUSOJQLYFSE-UHFFFAOYSA-N difluoroboron Chemical compound F[B]F OKZIUSOJQLYFSE-UHFFFAOYSA-N 0.000 claims description 11
- 238000002347 injection Methods 0.000 claims description 8
- 239000007924 injection Substances 0.000 claims description 8
- 238000005468 ion implantation Methods 0.000 claims description 7
- 238000005530 etching Methods 0.000 claims description 4
- 238000001259 photo etching Methods 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 238000002513 implantation Methods 0.000 description 6
- 239000003795 chemical substances by application Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 229910001416 lithium ion Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
The present invention provides the manufacture method of a kind of rf-ldmos quasiconductor, including: in substrate, inject the sinker area ion of the first preset concentration, and driven in by high temperature and form the sinker area with the first preset concentration；The substrate of the sinker area to formation with the first preset concentration injects the body district ion of the second preset concentration, and is driven in by high temperature and form the body district with the second preset concentration；Injecting the drift region ion of the 3rd preset concentration on the substrate in the body district to formation with the second preset concentration, formation has the drift region of the 3rd preset concentration, has the sinker area of the 4th preset concentration and have the body district of the 5th preset concentration.The RF LDMOS manufacture method that the present invention provides, by the ion concentration controlling to sinker area, body district and drift region are injected, make when making drift region, drift region is defined without reticle, mask is done without photoresistance, simplify the manufacturing process of drift region, thus simplify the manufacturing process of RF LDMOS, provide cost savings.
Description
Technical field
The present invention relates to semiconductor device processing technology, particularly relate to a kind of radio frequency lateral double diffused metal
The manufacture method of oxide semiconductor.
Background technology
Rf-ldmos quasiconductor (RF lateral double-diffused Metal
Oxide Semiconductor, is called for short RF LDMOS) it is widely used in cellular base station, radio and television
With fields such as radars.
The structure of RF LDMOS is typically made up of following components: drain region, drift region, body district,
Source region, P+ district, sinker area and polysilicon gate polar region.Drift region acts primarily as high pressure resistant effect, at energy
Under the high voltage allowed, drift region and epi region below can all exhaust, to reach to block
Purpose.
In existing technique, when making RF LDMOS drift region, generally utilize definition drift region
Reticle define drift region after, do mask with photoresistance, be then injected into drift region ion, thus shape
Become drift region.This manufacture method, not only makes the complex manufacturing process of RF LDMOS, and
Cost of manufacture is higher.
Summary of the invention
The present invention provides the manufacture method of a kind of rf-ldmos quasiconductor, is used for solving
Certainly existing manufacture method process is complicated, the problem that cost is high.
The embodiment of the present invention provides the manufacture method of a kind of rf-ldmos quasiconductor,
Including:
In substrate, inject the sinker area ion of the first preset concentration, and drive in formation by high temperature and have
The sinker area of one preset concentration；
The body of the second preset concentration is injected in the substrate of the sinker area that described in being formed, there is the first preset concentration
District's ion, and drive in be formed by high temperature there is the body district of the second preset concentration；
The drift of the 3rd preset concentration is injected on the substrate in the body district that described in being formed, there is the second preset concentration
District's ion, is formed and has the drift region of the 3rd preset concentration, the sinker area with the 4th preset concentration and tool
Having the body district of the 5th preset concentration, described second preset concentration is less than described first preset concentration, and described the
Three preset concentrations are less than described second preset concentration, and described 4th preset concentration is preset dense less than described first
Degree, described 5th preset concentration is less than described second preset concentration；
The substrate of the drift region that described formation has the 3rd preset concentration is formed source region, drain region and P+
District.
RF LDMOS manufacture method as above, the 3rd preset concentration is at 1E12/square centimeter extremely
Between 5E13/square centimeter.
RF LDMOS manufacture method as above, the second preset concentration is at 1.1E13/square centimeter
Between 1.5E14/square centimeter.
RF LDMOS manufacture method as above, the first preset concentration is at 1E15/square centimeter extremely
Between 1E16/square centimeter.
RF LDMOS manufacture method as above, described in the substrate forming described first sinker area
Before injecting the sinker area ion of the second preset concentration, also include:
There is described in formed the Grown gate oxide of sinker area and the polysilicon of the first concentration, and
Described polysilicon is carried out resistance lowering injection, described polysilicon is carried out photoetching and etching, form polysilicon
Grid lines.
RF LDMOS manufacture method as above, described formation on the substrate of described formation drift region
Source region, drain region and P+ district, including:
With reticle definition source region and position, drain region, then carry out ion implanting, to form source region and drain region；
Define P+ zone position by reticle, then carry out ion implanting, to form P+ district.
RF LDMOS manufacture method as above, described body district ion be boron ion, boron difluoride,
Phosphonium ion or arsenic ion.
RF LDMOS manufacture method as above, described drift region ion be boron ion, boron difluoride,
Phosphonium ion or arsenic ion.
RF LDMOS manufacture method as above, described drift region ion implantation energy is 40,000 electricity
Sub-volt～80 kilo electron volts.
The RF LDMOS manufacture method that the present invention provides, by controlling to sinker area, body district and drift region
The ion concentration injected so that when making drift region, it is not necessary to reticle definition drift region, does without photoresistance
Mask, and directly inject drift region ion to whole substrate, simplify the manufacturing process of drift region, thus
Simplify the manufacturing process of RF LDMOS, provide cost savings.
Accompanying drawing explanation
The making side of the rf-ldmos quasiconductor that Fig. 1 provides for the embodiment of the present invention
The schematic flow sheet of method；
The manufacture method of the RF LDMOS that Fig. 2 provides for the present invention is formed the structural representation of sinker area
Figure；
The RF LDMOS manufacture method that Fig. 3 provides for the present invention is formed the structural representation in body district；
The RF LDMOS manufacture method that Fig. 4 provides for the present invention is formed drift region structure schematic diagram；
The N-type RF LDMOS manufacture method schematic flow sheet that Fig. 5 provides for the present invention；
The making N-type RF LDMOS method that Fig. 6 provides for the present invention has the dense lining of p-type extension
The structural representation at the end；
The making N-type RF LDMOS method that Fig. 7 provides for the present invention is formed gate oxide and polysilicon
Structural representation；
The structural representation in body district defined in the making N-type RF LDMOS method that Fig. 8 provides for the present invention
Figure；
The making N-type RF LDMOS method that Fig. 9 provides for the present invention is formed source region and the structure in drain region
Schematic diagram；
The making N-type RF LDMOS method that Figure 10 provides for the present invention is formed the structural representation in P+ district
Figure.
Reference:
1-substrate；2-is lightly doped extension；3-sinker area；
4-gate oxide；5-polysilicon gate；6-body district；
7-drift region；8-1-drain region；8-2-source region；
9-P+ district；10-photoresistance.
Detailed description of the invention
The making side of the rf-ldmos quasiconductor that Fig. 1 provides for the embodiment of the present invention
The schematic flow sheet of method.As it is shown in figure 1, the rf-ldmos that the present embodiment provides
The manufacture method of quasiconductor, may include that
S10, injects the sinker area ion of the first preset concentration in substrate, and drives in formation tool by high temperature
There is the sinker area of the first preset concentration.
Wherein, for N-type RF LDMOS, the substrate in the present embodiment is P type substrate, accordingly outside
Prolong as p-type extension；For p-type RF LDMOS, the substrate in the present embodiment is N-type substrate, accordingly
Extension be N-type extension.
The manufacture method of the RF LDMOS that reference Fig. 2, Fig. 2 provide for the present invention forms sinker area
Structural representation.
Wherein, the first preset concentration is between 1E15/square centimeter～1E16/square centimeter.Sink
District's ion implantation energy is 60 kilo electron volts (Kiloelectron volt is called for short Kev)～200kev,
Concrete, it is boron ion or boron difluoride for N-type RF LDMOS sinker area ion, for P
Type RF LDMOS sinker area ion is phosphonium ion or arsenic ion.Before carrying out sinker area ion implanting,
Needing first to define sinker area with the photolithography plate of sinker area, detailed process can be according to the existing sinker area side of being formed
Method is carried out, and here is omitted.I.e. in this step when forming sinker area, only to the ion concentration injected
Controlled, it is achieved technique can refer to prior art,
S11, injects the second preset concentration in the substrate of the sinker area having the first preset concentration described in being formed
Body district ion, and drive in be formed by high temperature there is the body district of the second preset concentration.
The manufacture method of the RF LDMOS that reference Fig. 3, Fig. 3 provide for the present invention is formed the knot in body district
Structure schematic diagram.
Concrete, described body district ion is boron ion, boron difluoride, phosphonium ion or arsenic ion.
Wherein, for N-type RF LDMOS, the body district ion of injection is boron ion or boron difluoride,
For p-type RF LDMOS, the body district ion of injection is phosphonium ion or arsenic ion.
When injecting body district ion, the second preset concentration 1.1E13/square centimeter to 1.5E14/square
Between centimetre.
In the present embodiment, before carrying out body district ion implanting, need first to define body district, tool with photolithography plate
Body process can be carried out according to existing body district forming method, and here is omitted.
S12, injects the 3rd preset concentration on the substrate in the body district having the second preset concentration described in being formed
Drift region ion, formation has the drift region of the 3rd preset concentration, has the sinker area of the 4th preset concentration
With the body district with the 5th preset concentration.
Wherein, described second preset concentration is less than described first preset concentration, and described 3rd preset concentration is little
In described second preset concentration, described 4th preset concentration is less than described first preset concentration, and the described 5th
Preset concentration is less than described second preset concentration.
The manufacture method of the RF LDMOS that reference Fig. 4, Fig. 4 provide for the present invention forms drift region
Structural representation.
The implantation concentration of drift region ion is between 1E12/square centimeter to 5E13/square centimeter.
Described drift region ion implantation energy is 40 kilo electron volts～80 kilo electron volts.
Concrete, described drift region ion is boron ion, boron difluoride, phosphonium ion or arsenic ion.Its
In, for N-type RF LDMOS, the drift region ion of injection is phosphonium ion or arsenic ion, for P
Type RF LDMOS, the drift region ion of injection is boron ion or boron difluoride.I.e. drift region ion with
The characteristic of body district ion and sinker area ion is contrary.
It is understood that according to the compensating effect of ion, if i.e. N-type and p-type ion implanting are same
In one region, then a dense side will compensate a light side, finally only embodies in this panel region
The extrinsic property of a dense side.So in the manufacture method of the RF LDMOS of present invention offer, due to
Sinker area ion is contrary with drift region ion characteristic, then the 4th preset concentration is the first preset concentration and the 3rd
The difference of preset concentration, the 5th preset concentration is the second preset concentration and the difference of the 3rd preset concentration.
It should be noted that the implantation concentration of drift region ion is when selecting, need according to body district ion
Implantation concentration determines so that after the ion of Lithium ions compensation complete drift region, body district, at 1E13/square centimeter extremely
Between 1E14/square centimeter.I.e. the 5th concentration preset 1E13/square centimeter to 1E14/
Between Ping Fangli meter.
Concrete, the ion implantation dosage in drift region is well below source region, drain region, P+ district, sinker area
3, the ion dose in body district 6 and polysilicon gate 5, therefore, even drift region 7 ion implanting arrives
Other positions of silicon chip (such as source regions, drain region, sinker area, body district etc.), also will not be to these regions
Ion distribution constitute big impact, it may also be said to have little to no effect.So the RF that the present invention provides
In the manufacture method of LDMOS, when making drift region, define the position of drift region without reticle
Put, do mask without photoresistance, but full wafer silicon chip all injects drift region ion.
As a example by N-type RF LDMOS, due to other regions, such as ZhongPXing Ti district of body district 6 ion
Relatively denseer, and the body district ion below the mainly polysilicon gate that works of body district, so the drift of N-type
Even if moving district's ion to be injected into body district, body district p-type ion is not the most affected, and to successive concentrations more
Dense source region, drain region and P+ district more do not affect.
S13, on the substrate of the drift region that described formation has the 3rd preset concentration formed source region, drain region and
P+ district.
Concrete, above-mentioned S13 includes:
With reticle definition source region and position, drain region, then carry out ion implanting, to form source region and drain region；
Define P+ zone position by reticle, then carry out ion implanting, to form P+ district.
Same, if N-type RF LDMOS, then the ion that source region and drain region are injected is phosphonium ion or arsenic
Ion, if p-type RF LDMOS, then the ion that source region and drain region are injected is boron ion or boron difluoride.
After the making completing P+ district, backend process can be carried out according to prior art, as contact hole,
Metal and sheath, back process etc., be finally completed the making of RF LDMOS.
The manufacture method of RF LDMOS that the present embodiment provides, by controlling to sinker area, body district and drift
Move the ion concentration that district is injected so that when making drift region, it is not necessary to reticle definition drift region, unglazed
Mask is done in resistance, and directly injects drift region ion to whole substrate, simplifies the manufacturing process of drift region,
Thus simplify the manufacturing process of RF LDMOS, provide cost savings.
It addition, before above-mentioned S10, the manufacture method of this RF LDMOS also includes:
There is described in formation Grown gate oxide and the polysilicon of the sinker area of the first preset concentration,
And described polysilicon is carried out resistance lowering injection, described polysilicon is carried out photoetching and etching, forms polycrystalline
Silicon gate lines.
Concrete, as a example by N-type RF LDMOS, the N-type RF LDMOS that Fig. 5 provides for the present invention
Manufacture method schematic flow sheet.
S50, it is provided that the dense substrate of a p-type, has lightly doped p-type extension above.
As shown in Figure 6, the making N-type RF LDMOS method that Fig. 6 provides for the present invention has
The structural representation of the dense substrate of p-type extension.
S51, defines sinker area by the reticle of sinker area, and injects sinker area ion, carry out afterwards
High temperature drives in, until sinker area ion is fully contacted with dense P type substrate.
Wherein, sinker area ion implantation energy is 60 kilo electron volts (Kiloelectron volt, letters
Claim Kev)～200kev, dosage 1E15～1E16 (individual/square centimeter).As shown in Figure 2.
S52, defines active area, then growth gate oxide and polysilicon, and carries out low to polysilicon
Resistanceization is injected, and polysilicon carries out photoetching and etching afterwards, forms polysilicon gate lines.
Wherein, Implantation Energy is 30kev～100kev, dosage 1E15～1E16 (individual/square centimeter),
Injecting element is arsenic ion or phosphonium ion.As it is shown in fig. 7, the making N-type that Fig. 7 provides for the present invention
RF LDMOS method is formed gate oxide and the structural representation of polysilicon.
S53, defines body district by body district reticle, then carries out PXing Ti district ion implanting.
Wherein, injecting element is boron ion or boron difluoride, and Implantation Energy is 60～120kev, agent
Amount 1.1E13～1.5E14 (individual/square centimeter).As shown in Figure 8, the making that Fig. 8 provides for the present invention
The structural representation in body district defined in N-type RF LDMOS method.
S54, carries out high temperature to body district ion and drives in, until boron ion diffuses laterally into polysilicon
Till You Ce.
Wherein, temperature 1100～1200 degree, between time 100～300 minutes, as shown in Figure 3.
S55, injects N-type drift region ion.
Wherein, injecting element is phosphonium ion or arsenic ion, and Implantation Energy is 40kev～80kev, agent
Amount is 1E12～5E13 (individual/square centimeter), as shown in Figure 4.
S56, with reticle definition source region and position, drain region, then does ion implanting.
Wherein, injecting element is phosphonium ion or arsenic ion, and Implantation Energy is 40kev～100kev, agent
Amount 3E15～1E16 (individual/square centimeter).As it is shown in figure 9, the making that Fig. 9 provides for the present invention
N-type RF LDMOS method is formed source region and the structural representation in drain region.
S57, defines P+ zone position by reticle, then does ion implanting.
Injecting element is boron ion, energy 40kev～80kev, dosage 1E15～1E16 (individual/square
Centimetre).As shown in Figure 10, the making N-type RF LDMOS method that Figure 10 provides for the present invention
The structural representation in middle formation P+ district.
Backend process makes, and such as contact hole, metal and sheath, back process etc., can refer to existing
Technical process performs, and no further details to be given herein.
Last it is noted that various embodiments above is only in order to illustrate technical scheme, rather than right
It limits；Although the present invention being described in detail with reference to foregoing embodiments, this area common
Skilled artisans appreciate that the technical scheme described in foregoing embodiments still can be modified by it,
Or the most some or all of technical characteristic is carried out equivalent；And these amendments or replacement, and
The essence not making appropriate technical solution departs from the scope of various embodiments of the present invention technical scheme.
Claims (9)
1. the manufacture method of a rf-ldmos quasiconductor, it is characterised in that bag
Include:
In substrate, inject the sinker area ion of the first preset concentration, and drive in formation by high temperature and have
The sinker area of one preset concentration；
The body of the second preset concentration is injected in the substrate of the sinker area that described in being formed, there is the first preset concentration
District's ion, and drive in be formed by high temperature there is the body district of the second preset concentration；
The drift of the 3rd preset concentration is injected on the substrate in the body district that described in being formed, there is the second preset concentration
District's ion, is formed and has the drift region of the 3rd preset concentration, the sinker area with the 4th preset concentration and tool
Having the body district of the 5th preset concentration, described second preset concentration is less than described first preset concentration, and described the
Three preset concentrations are less than described second preset concentration, and described 4th preset concentration is preset dense less than described first
Degree, described 5th preset concentration is less than described second preset concentration；
The substrate of the drift region that described formation has the 3rd preset concentration is formed source region, drain region and P+
District.
The making side of rf-ldmos quasiconductor the most according to claim 1
Method, it is characterised in that described 3rd preset concentration 1E12/square centimeter to 5E13/square li
Between meter.
The making side of rf-ldmos quasiconductor the most according to claim 1
Method, it is characterised in that described second preset concentration 1.1E13/square centimeter to 1.5E14/square
Between centimetre.
The making side of rf-ldmos quasiconductor the most according to claim 1
Method, it is characterised in that described first preset concentration 1E15/square centimeter to 1E16/square li
Between meter.
5. according to the rf-ldmos quasiconductor described in any one of Claims 1 to 4
Manufacture method, it is characterised in that the described substrate to the sinker area described in formation with the first preset concentration
After the body district ion of middle injection the second preset concentration, also include:
There is described in formed the Grown gate oxide of sinker area and the polycrystalline of the first preset concentration
Silicon, and described polysilicon is carried out resistance lowering injection, described polysilicon is carried out photoetching and etching, is formed
Polysilicon gate lines.
The making side of rf-ldmos quasiconductor the most according to claim 5
Method, it is characterised in that formed on the substrate of the described drift region in described formation with the 3rd preset concentration
Source region, drain region and P+ district, including:
With reticle definition source region and position, drain region, then carry out ion implanting, to form source region and drain region；
Define P+ zone position by reticle, then carry out ion implanting, to form P+ district.
The making side of rf-ldmos quasiconductor the most according to claim 6
Method, it is characterised in that described body district ion is boron ion, boron difluoride, phosphonium ion or arsenic ion.
The making side of rf-ldmos quasiconductor the most according to claim 6
Method, it is characterised in that described drift region ion is boron ion, boron difluoride, phosphonium ion or arsenic ion.
9. according to the rf-ldmos quasiconductor described in any one of claim 5～8
Manufacture method, it is characterised in that described drift region ion implantation energy is 40 kilo electron volts～80,000
Electron-volt.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109920737A (en) * | 2019-01-07 | 2019-06-21 | 北京顿思集成电路设计有限责任公司 | LDMOS device and its manufacturing method |
| CN113782611A (en) * | 2021-09-26 | 2021-12-10 | 深圳基本半导体有限公司 | SiC LDMOS device and manufacturing method thereof |
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| US20100148253A1 (en) * | 2008-12-17 | 2010-06-17 | Vanguard International Semiconductor | High voltage semiconductor devices with schottky diodes |
| CN103035675A (en) * | 2012-10-26 | 2013-04-10 | 上海华虹Nec电子有限公司 | Radio frequency (RF) laterally diffused metal oxide semiconductor (LDMOS) component and manufacture method |
| CN103762239A (en) * | 2013-12-31 | 2014-04-30 | 上海联星电子有限公司 | Radio-frequency power LDMOS device and manufacturing method thereof |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109920737A (en) * | 2019-01-07 | 2019-06-21 | 北京顿思集成电路设计有限责任公司 | LDMOS device and its manufacturing method |
| CN109920737B (en) * | 2019-01-07 | 2022-02-08 | 北京顿思集成电路设计有限责任公司 | LDMOS device and manufacturing method thereof |
| CN113782611A (en) * | 2021-09-26 | 2021-12-10 | 深圳基本半导体有限公司 | SiC LDMOS device and manufacturing method thereof |
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