CN106280450A - 一种Ce掺杂PI/CuO复合薄膜的制备方法 - Google Patents
一种Ce掺杂PI/CuO复合薄膜的制备方法 Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title claims abstract description 8
- 239000010409 thin film Substances 0.000 claims abstract description 21
- 238000000034 method Methods 0.000 claims abstract description 10
- 239000010408 film Substances 0.000 claims abstract description 9
- 230000000694 effects Effects 0.000 claims abstract description 7
- 229910002492 Ce(NO3)3·6H2O Inorganic materials 0.000 claims abstract description 5
- 238000005342 ion exchange Methods 0.000 claims abstract description 5
- 238000002604 ultrasonography Methods 0.000 claims abstract description 5
- 238000010438 heat treatment Methods 0.000 claims abstract description 3
- 239000002608 ionic liquid Substances 0.000 claims abstract description 3
- RBTBFTRPCNLSDE-UHFFFAOYSA-N 3,7-bis(dimethylamino)phenothiazin-5-ium Chemical compound C1=CC(N(C)C)=CC2=[S+]C3=CC(N(C)C)=CC=C3N=C21 RBTBFTRPCNLSDE-UHFFFAOYSA-N 0.000 abstract description 3
- 230000015556 catabolic process Effects 0.000 abstract description 3
- 238000006731 degradation reaction Methods 0.000 abstract description 3
- 229960000907 methylthioninium chloride Drugs 0.000 abstract description 3
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 230000015572 biosynthetic process Effects 0.000 abstract description 2
- 238000006243 chemical reaction Methods 0.000 abstract description 2
- 230000002349 favourable effect Effects 0.000 abstract description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 238000003786 synthesis reaction Methods 0.000 abstract description 2
- 239000004642 Polyimide Substances 0.000 description 15
- 229920001721 polyimide Polymers 0.000 description 15
- 238000005516 engineering process Methods 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 238000006555 catalytic reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- VUZPPFZMUPKLLV-UHFFFAOYSA-N methane;hydrate Chemical compound C.O VUZPPFZMUPKLLV-UHFFFAOYSA-N 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000001699 photocatalysis Effects 0.000 description 1
- 239000011941 photocatalyst Substances 0.000 description 1
- 238000013033 photocatalytic degradation reaction Methods 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 239000010865 sewage Substances 0.000 description 1
- 238000001308 synthesis method Methods 0.000 description 1
- 238000004065 wastewater treatment Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
- C08K3/20—Oxides; Hydroxides
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- B01J31/00—Catalysts comprising hydrides, coordination complexes or organic compounds
- B01J31/26—Catalysts comprising hydrides, coordination complexes or organic compounds containing in addition, inorganic metal compounds not provided for in groups B01J31/02 - B01J31/24
- B01J31/28—Catalysts comprising hydrides, coordination complexes or organic compounds containing in addition, inorganic metal compounds not provided for in groups B01J31/02 - B01J31/24 of the platinum group metals, iron group metals or copper
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- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
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Abstract
一种Ce掺杂PI/CuO复合薄膜的制备方法，将PI薄膜在超声波下清洗15‑20min,然后将其放入5‑6mol/L KOH溶液中处理25‑30min，冲洗过后将薄膜放入Cu(CH3COO)2·H2O、Ce(NO3)3·6H2O（Ce3+量为7‑9％（wt,质量分数,下同）、离子液浓度为0.45mol/L）溶液中离子交换，取出清洗并烘干，最后通过阶段升温对薄膜进行热处理，先从室温用1h升温到130℃，保持1h；再从130℃经过1h升温到340℃，保持4h，即制得Ce掺杂PI/CuO薄膜。本发明的有益效果是：合成工艺简单，反应条件温和，生产成本较低，可重复性好，制得的Ce掺杂PI/CuO复合薄膜亚甲基蓝降解率可达93.2‑93.8％，TOC去除率79.2‑80.1％。
Description
技术领域
本发明涉及材料合成方法，具体的是一种Ce掺杂PI/CuO复合薄膜的制备方法。
背景技术
聚酰亚胺（PI）作为一种综合性能优异的高分子材料，广泛用于航空、航天、纳米、微电子和激光等领域。半导体氧化物是重要的催化剂，尤其是纳米金属氧化物，较大的比表面积赋予其特殊的理化性质，增强了催化性能。将２种不同的金属氧化物进行掺杂，可以实现电子－空穴对更好的分离，扩大催化剂对光的响应范围，提高了光的利用率。
当前，我国污水处理亟需低能耗、生态型的污水处理技术。光催化反应是利用光催化剂在紫外线照射下具有的氧化还原能力达到分解净化污染物的效果，利用光催化降解可以将有机污染物分解为二氧化碳和水等小分子，净化效果彻底。将金属氧化物负载于ＰＩ薄膜表面，既拓宽了ＰＩ的应用范围，也解决了光催化剂的回收利用。
发明内容
本发明所要解决的技术问题在于提供一种Ce掺杂PI/CuO复合薄膜的制备方法，提供一种新的制备方法。
本发明采用的制备方法，包括如下步骤：
将PI薄膜在超声波下清洗15-20min,然后将其放入5-6mol/L KOH溶液中处理25-30min，冲洗过后将薄膜放入Cu(CH3COO)2·H2O、Ce(NO3)3·6H2O（Ce3+量为7-9％（wt,质量分数,下同）、离子液浓度为0.45mol/L）溶液中离子交换，取出清洗并烘干，最后通过阶段升温对薄膜进行热处理，先从室温用1h升温到130℃，保持1h；再从130℃经过1h升温到340℃，保持4h，即制得Ce掺杂PI/CuO薄膜。
本发明的有益效果是：合成工艺简单，反应条件温和，生产成本较低，可重复性好，制得的Ce掺杂PI/CuO复合薄膜亚甲基蓝降解率可达93.2-93.8％，TOC去除率79.2-80.1％。
具体实施方式
以下结合实例进一步说明本发明的内容，由技术常识可知，本发明也可通过其它的不脱离本发明技术特征的方案来描述，因此所有在本发明范围内或等同本发明范围内的改变均被本发明包含。
实施例1：
将PI薄膜在超声波下清洗15min,然后将其放入5mol/L KOH溶液中处理25min，冲洗过后将薄膜放入Cu(CH3COO)2·H2O、Ce(NO3)3·6H2O（Ce3+量为7％（wt,质量分数,下同）、离子液浓度为0.45mol/L）溶液中离子交换，取出清洗并烘干，最后通过阶段升温对薄膜进行热处理，先从室温用1h升温到130℃，保持1h；再从130℃经过1h升温到340℃，保持4h，即制得Ce掺杂PI/CuO薄膜。
实施例2：
将PI薄膜在超声波下清洗20min,然后将其放入6mol/L KOH溶液中处理30min，冲洗过后将薄膜放入Cu(CH3COO)2·H2O、Ce(NO3)3·6H2O（Ce3+量为9％（wt,质量分数,下同）、离子液浓度为0.45mol/L）溶液中离子交换，取出清洗并烘干，最后通过阶段升温对薄膜进行热处理，先从室温用1h升温到130℃，保持1h；再从130℃经过1h升温到340℃，保持4h，即制得Ce掺杂PI/CuO薄膜。
采用本发明方法制备Ce掺杂PI/CuO薄膜，薄膜表面生成了氧化物晶体，根据谢乐公式计算得，平均晶粒尺寸为19-20nm；光催化活性通过实验，亚甲基蓝降解率可达93.2-93.8％，TOC去除率79.2-80.1％。
Claims (1)
1.一种Ce掺杂PI/CuO复合薄膜的制备方法，包括如下步骤：将PI薄膜在超声波下清洗15-20min,然后将其放入5-6mol/L KOH溶液中处理25-30min，冲洗过后将薄膜放入Cu(CH3COO)2·H2O、Ce(NO3)3·6H2O（Ce3+量为7-9％（wt,质量分数,下同）、离子液浓度为0.45mol/L）溶液中离子交换，取出清洗并烘干，最后通过阶段升温对薄膜进行热处理，先从室温用1h升温到130℃，保持1h；再从130℃经过1h升温到340℃，保持4h，即制得Ce掺杂PI/CuO薄膜。
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1181028A (zh) * | 1995-01-20 | 1998-05-06 | 恩格尔哈德公司 | 通过移动具有污染物处理表面的车辆通过大气清洁环境空气的方法 |
| CN105472791A (zh) * | 2015-12-23 | 2016-04-06 | 东莞珂洛赫慕电子材料科技有限公司 | 一种稀土掺杂半导体红外辐射厚膜电子浆料及其制备方法 |
| CN106378193A (zh) * | 2016-08-17 | 2017-02-08 | 潘忠宁 | 一种Ce掺杂PI/CuO复合薄膜的制备方法 |
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- 2016-08-22 CN CN201610699588.3A patent/CN106280450A/zh active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1181028A (zh) * | 1995-01-20 | 1998-05-06 | 恩格尔哈德公司 | 通过移动具有污染物处理表面的车辆通过大气清洁环境空气的方法 |
| CN105472791A (zh) * | 2015-12-23 | 2016-04-06 | 东莞珂洛赫慕电子材料科技有限公司 | 一种稀土掺杂半导体红外辐射厚膜电子浆料及其制备方法 |
| CN106378193A (zh) * | 2016-08-17 | 2017-02-08 | 潘忠宁 | 一种Ce掺杂PI/CuO复合薄膜的制备方法 |
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