CN106278248A - 溅射靶 - Google Patents

溅射靶 Download PDF

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CN106278248A
CN106278248A CN201610490653.1A CN201610490653A CN106278248A CN 106278248 A CN106278248 A CN 106278248A CN 201610490653 A CN201610490653 A CN 201610490653A CN 106278248 A CN106278248 A CN 106278248A
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sputtering target
sputtering
type oxide
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木内健
木内健一
饭野实
川口行雄
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TDK Corp
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Abstract

本发明提供一种溅射靶，作为主成分含有钙钛矿型氧化物，钙钛矿型氧化物的晶体粒径为11～15μm，抗弯强度为60MPa以上。

Description

溅射靶
技术领域
本发明涉及一种溅射靶(SPUTTERING TARGET)。
背景技术
溅射法是在半导体元件、液晶显示装置、光学媒体等需要高质量的薄膜的领域内被广泛使用的成膜法。溅射法根据外加电压的种类大致分为直流(DC)溅射法和高频(RF)溅射法，但从可以使用廉价的电源的方面、成膜速度快的方面、基板的温度上升少的方面等出发，在薄膜制品的批量生产工序中，DC溅射法的成膜占主流。
在DC溅射法中，溅射靶本身要求导电性。因此，在通过溅射来生产被用作电容器等的薄膜材料的钙钛矿型氧化物等电介质材料的薄膜时，进行了通过RF溅射法的成膜(专利文献1及2)。另外，还提出有使用具备导电性的钛酸钡烧结材料的靶，通过低频溅射法进行成膜的技术(专利文献3)。
现有技术文献
专利文献
专利文献1：日本特开2000-1773号公报
专利文献2：日本特许第3129233号公报
专利文献3：日本特开2013-213257号公报
发明内容
发明要解决的技术问题
在此，由于DC溅射法具有上述的优点，因此期望在制造导电性不足的钙钛矿型氧化物的薄膜时也通过DC溅射法进行成膜。但是，用于成膜钙钛矿型氧化物等介质材料的溅射靶热导率较低。因此判明，在使用这样的溅射靶进行DC溅射的情况下，溅射靶的表面充满热，成膜中，溅射靶容易破裂。因此，需要将溅射靶减薄，这种情况存在与成本增高及生产性的降低有关的问题。
本发明是鉴于上述技术问题而完成的，其目的在于，提供一种即使增大厚度，在DC溅射中也不易破裂的溅射靶。
用于解决技术问题的手段
(溅射靶)
本发明的溅射靶作为主成分含有钙钛矿型氧化物，钙钛矿型氧化物的晶体粒径为11～15μm，抗弯强度为60MPa以上。
发明效果
根据本发明，能够提供一种即使增大厚度，在DC溅射中也不易破裂的溅射靶。
附图说明
图1是在实施例5中获得的溅射靶的截面金属显微镜照片。
符号说明
1晶粒
具体实施方式
本实施方式的溅射靶作为主成分含有钙钛矿型氧化物，钙钛矿型氧化物的晶体粒径为11～15μm，抗弯强度为60MPa以上。这种溅射靶即使增大厚度，在DC溅射中也不易破裂。对于其理由，本发明人认为是因为本实施方式的溅射靶晶体粒径大、晶界少，因此热导率提高的缘故。
所谓钙钛矿型氧化物，是具有钙钛矿结构的结晶结构的氧化物，可以用通式ABO3表示。在此，A和B分别表示占有A位置的离子(A离子)及占有B位置的离子(B离子)。作为A离子可举出Mg、Ca、Sr、Ba及Pb。作为B离子可举出Ti及Zr。A离子及B离子可以都是一种离子，也可以是两种以上的离子。
上述溅射靶作为主成分含有钙钛矿型氧化物。在此，所谓主成分，是指例如相对于溅射靶整体为80mol％以上，优选92mol％以上。
上述溅射靶包含存在于晶粒及晶粒彼此之间的晶界。晶粒优选作为主成分包含钙钛矿型氧化物。另外，晶界优选作为主成分含有钙钛矿型氧化物。钙钛矿型氧化物的晶体粒径为11～15μm，优选12～14μm。钙钛矿型氧化物的最大粒径优选为13～20μm。另外，晶体粒径例如可以从截面金属显微镜照片的定向切线直径(Feret直径)的平均值取得。另外，钙钛矿型氧化物的最大粒径例如可以从截面金属显微镜照片的定向切线直径的最大值取得。
本实施方式的溅射靶在钙钛矿型氧化物以外还可以含有添加物。作为这种添加物，从提高使用溅射靶成膜的膜的介电性能的观点出发，优选IIIB族(钪族)、VB族(钒族)、VIB族(铬族)、VIIB族(锰族)的氧化物或盐(例如碳酸盐等)。作为上述添加物的含量，优选相对于溅射靶整体为0.01～3mol％。
本实施方式的溅射靶在上述以外可以含有不可避免的杂质粒子。作为不可避免的杂质粒子，例如可举出Na2O、SiO2、Al2O3、Fe2O3等颗粒，分别能够允许到1000mass ppm左右。
上述溅射靶的抗弯强度为60MPa以上，优选80～100MPa。在此，抗弯强度是指例如通过JISR-1601中规定的三点弯曲试验所测定的抗弯强度。
上述溅射靶优选烧结密度为80～99％。另外，所谓烧结密度是指相对于理论密度的烧结体的密度。
上述溅射靶优选电阻值为0.01～10Ωcm，更优选0.01～0.7Ωcm。若为这样的电阻值，则能够将溅射靶适当地用于通过DC溅射法的成膜。
上述溅射靶优选热导率为3～12W/mK，更优选8～12W/mK。若为这样的热导率，则即使增大溅射靶的厚度，在DC溅射法中使用的情况下，溅射靶也不易破裂。
溅射靶的形状或大小等没有特别限制，例如，可以设定为直径127～300mm左右的圆板。
溅射靶的厚度例如可以设定为7～10mm。本实施方式的溅射靶即使为这样的厚度，在通过DC溅射法进行的成膜中也不易破裂，因此能够降低成本及提高薄膜制品的生产性。
(溅射靶的制造方法)
对本实施方式的溅射靶的制造方法的一个例子进行说明。
首先，准备具有和所要求的溅射靶相同组成的原料粉体。原料粉体中，作为主成分含有钙钛矿型氧化物的粉末，可以根据需要含有上述添加物的粉末。作为钙钛矿型氧化物的粉末，平均粒子径为0.5～0.7μm，优选为0.5～0.6μm。在此，平均粒径例如是指在用激光衍射法测定的粒径的分布曲线上，累计体积百分率为50％的粒径。另外，作为钙钛矿型氧化物的粉末的纯度，优选为99.9～99质量％。作为任意的添加物的粉末的纯度，优选为99.99～99.9质量％。
作为钙钛矿型氧化物的粉末的取得方法，没有特别限制，可以使用市售品，也可以使用对通过固相法、草酸法、水热法、溶胶-凝胶法等合成的粉末进行粉碎、分级等使其平均粒径达到上述范围的钙钛矿型氧化物的粉末。
在准备原料粉体时，在混合钙钛矿型氧化物和IIIB族(钪族)、VB族(钒族)、VIB族(铬族)、VIIB族(锰族)的氧化物或盐(例如碳酸盐等)的粉末的情况下，优选干式混合。作为混合方法没有特别限定，不过例如优选在球磨机中进行混合。
其次，优选将所获得的原料粉体成形而获得成形体。作为成形方法没有特别限制，例如可举出干式成形或等静压加压法进行成形的方法。等静压加压法包含冷等静压加压法(CIP法)或热等静压加压法(WIP法)等。作为原料粉体成形时的压力，例如在干式成形时设为5～50MPa，在等静压加压法中设为100～500MPa的范围。
上述成形体优选不含粘合剂。在成形体不含粘合剂的情况下，在后述的烧结时，不易受到残留碳对晶粒生长的阻碍，因此容易将烧结体中的钙钛矿型氧化物的晶体粒径生长为11～15μm的范围。在此，作为粘合剂可举出在氧化物的烧结体的制造方法中用于成形原料粉体而通常使用的粘合剂，具体而言，可举出聚乙烯醇(PVA)。
其次，将上述原料粉体进行烧结而获得烧结体。烧结在800～1400℃的温度下进行，优选为900～1300℃。在烧结时，优选不使用施加非等静压的压力的热压等的方法进行烧结。在本实施方式的溅射靶的制造方法中，对上述原料粉体施加等静压或不施加压力而进行烧结，因此在烧结时促进晶粒生长，容易使烧结后所获得的溅射靶中的钙钛矿型氧化物的晶体粒径生长到11～15μm，并容易将溅射靶的抗弯强度做到60MPa以上。用这种方法获得的溅射靶即使使用DC溅射法也不易破裂。作为烧结时的烧结时间，优选为10～20小时。作为烧结时的气氛没有特别限制，可以是惰性气氛、空气或真空气氛。
对获得的烧结体进行切断成规定的大小等的加工来完成溅射靶。本实施方式的溅射靶热导率高，在溅射中不易破裂，因此可以在RF溅射法及DC溅射法的任一方法中使用。
(薄膜的制造方法)
以下，针对使用了本实施方式的溅射靶的薄膜的制造方法的一个例子进行说明。
首先，准备上述溅射靶。在溅射靶的主表面上用In等粘合铜制的冷却板。
将安装有冷却板的溅射靶搭载于DC溅射装置上，在含氧的气氛下，通过DC溅射法在基板上成膜。基板的材质没有特别限制，可以根据用途适宜选择，例如可举出Si基板、以及Pt、Pd、Ni等金属或用金属涂膜的基板等。作为溅射气体可以使用Ar等稀有气体。
通过如上所述进行成膜，能够获得电介质薄膜。作为上述电介质薄膜的用途，可举出电容器、压电元件等的电子部件。
实施例
准备了表1所示的组成的原料粉体。原料粉体纯度均为99.9质量％，平均粒径为0.5μm。将准备好的原料粉体在30MPa下进行干式成形。将所获得的成形体在真空气氛下(6Pa)不加压而在表1所示的烧结时间及烧结温度下进行烧结而得到烧结体。将所得到的烧结体通过平面磨床和圆筒研磨机切出200mmφ、厚度10mm，得到了实施例1～9及比较例1～12的溅射靶。
图1中表示实施例5的溅射靶的金属显微镜照片。如图1所示，观察到晶体粒径为13μm的钙钛矿型氧化物的结晶粒1。
(比较例13)
准备表1所示的组成的原料粉体。比较例13的原料粉体纯度为99.9质量％，平均粒径为13μm。将准备好的原料粉体进行干式成形。将所得到的成形体在真空气氛下(6Pa)以表1所示的烧结时间和烧结温度及负荷19.6MPa(200kg/cm2)进行热压烧结，得到烧结体。将所得到的烧结体通过平面磨床和圆筒研磨机切成200mmφ、厚度10mm，得到了溅射靶。
(溅射靶的评价)
(1)电阻值
对于实施例1～9及比较例1～13的溅射靶，分别使用比电阻测试仪通过JIS K-7194中规定的四探针法测定电阻值，并将测定的结果示于表1。
(2)热导率
对于实施例1～9及比较例1～13的溅射靶，分别通过热常数测定装置测定热导率，将测定结果示于表1。
(3)抗弯强度
对于实施例1～9及比较例1～13的溅射靶，分别使用强度测试仪通过JISR-1601中规定的三点弯曲试验测定抗弯强度，将测定结果示于表1。
(4)DC溅射稳定性
将实施例1～9及比较例1～13的各溅射靶分别用铟粘合于用Cu合金制成的冷却板上。将该溅射靶安装在溅射装置上，在Ar气氛下以3W/cm2的外加电力进行DC溅射。成膜速度为6.5nm/min。DC溅射之后，将溅射靶取出，在荧光灯下用肉眼进行观察，将有裂纹及缺口的溅射靶判断为“破裂”。将结果示于表1。在DC溅射中溅射靶产生了裂纹及缺口的情况下，溅射中放电电流及放电电压会急剧变化，所以，在溅射中也可以在一定程度上掌握“破裂”的存在与否。

Claims (1)

1.一种溅射靶，其中，
作为主成分含有钙钛矿型氧化物，
钙钛矿型氧化物的晶体粒径为11～15μm，
抗弯强度为60MPa以上。
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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6176986B1 (en) * 1996-05-27 2001-01-23 Mitsubishi Materials Corporation Sputtering target of dielectrics having high strength and a method for manufacturing same
CN103237773A (zh) * 2010-09-29 2013-08-07 东曹株式会社 氧化物烧结体及其制造方法、溅射靶材、氧化物透明导电膜及其制造方法、和太阳能电池
CN104204284A (zh) * 2012-04-02 2014-12-10 索尼公司 溅射靶、溅射靶的制造方法、钛酸钡薄膜的制造方法和薄膜电容器的制造方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4017220B2 (ja) * 1997-10-01 2007-12-05 日鉱金属株式会社 スパッタリング用ＢａｘＳｒ１−ｘＴｉＯ３−ｙターゲット材
US20070111894A1 (en) * 2003-09-03 2007-05-17 Nikki Materials Co., Ltd. Target for sputtering

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6176986B1 (en) * 1996-05-27 2001-01-23 Mitsubishi Materials Corporation Sputtering target of dielectrics having high strength and a method for manufacturing same
CN103237773A (zh) * 2010-09-29 2013-08-07 东曹株式会社 氧化物烧结体及其制造方法、溅射靶材、氧化物透明导电膜及其制造方法、和太阳能电池
CN104204284A (zh) * 2012-04-02 2014-12-10 索尼公司 溅射靶、溅射靶的制造方法、钛酸钡薄膜的制造方法和薄膜电容器的制造方法

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