CN106270863A - 原子层沉积涂层用于保护钎焊线不被腐蚀、侵蚀和击穿 - Google Patents
原子层沉积涂层用于保护钎焊线不被腐蚀、侵蚀和击穿 Download PDFInfo
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- 238000000576 coating method Methods 0.000 title claims abstract description 52
- 238000005476 soldering Methods 0.000 title claims abstract description 52
- 238000000231 atomic layer deposition Methods 0.000 title abstract description 6
- 239000011248 coating agent Substances 0.000 claims abstract description 48
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 32
- 238000000034 method Methods 0.000 claims abstract description 32
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 31
- 229910000838 Al alloy Chemical group 0.000 claims abstract description 13
- 239000012530 fluid Substances 0.000 claims description 28
- 229910052710 silicon Inorganic materials 0.000 claims description 23
- 239000010703 silicon Substances 0.000 claims description 23
- 239000000203 mixture Substances 0.000 claims description 20
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 15
- 238000005260 corrosion Methods 0.000 claims description 13
- 230000007797 corrosion Effects 0.000 claims description 13
- 230000003647 oxidation Effects 0.000 claims description 7
- 238000007254 oxidation reaction Methods 0.000 claims description 7
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 6
- 239000003989 dielectric material Substances 0.000 claims description 6
- 229910052727 yttrium Inorganic materials 0.000 claims description 6
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 6
- 229910052726 zirconium Inorganic materials 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 5
- 238000004891 communication Methods 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 claims description 5
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 230000003628 erosive effect Effects 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 18
- 239000007789 gas Substances 0.000 description 13
- 238000009826 distribution Methods 0.000 description 9
- 238000005219 brazing Methods 0.000 description 7
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- 239000011888 foil Substances 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 239000000374 eutectic mixture Substances 0.000 description 4
- 239000010408 film Substances 0.000 description 3
- CPELXLSAUQHCOX-UHFFFAOYSA-N Hydrogen bromide Chemical compound Br CPELXLSAUQHCOX-UHFFFAOYSA-N 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000010407 anodic oxide Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- -1 fluoro free radical Chemical class 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- OBNDGIHQAIXEAO-UHFFFAOYSA-N [O].[Si] Chemical compound [O].[Si] OBNDGIHQAIXEAO-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 150000001722 carbon compounds Chemical class 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 201000006549 dyspepsia Diseases 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910000042 hydrogen bromide Inorganic materials 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000006557 surface reaction Methods 0.000 description 1
- 238000004227 thermal cracking Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
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- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28194—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation by deposition, e.g. evaporation, ALD, CVD, sputtering, laser deposition
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- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/19—Soldering, e.g. brazing, or unsoldering taking account of the properties of the materials to be soldered
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/01—Layered products comprising a layer of metal all layers being exclusively metallic
- B32B15/016—Layered products comprising a layer of metal all layers being exclusively metallic all layers being formed of aluminium or aluminium alloys
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- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
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- H01J37/32458—Vessel
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- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
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- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
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Abstract
本发明涉及原子层沉积涂层用于保护钎焊线路不被腐蚀、侵蚀和击穿。根据本公开,提供了几个发明,包括用于钎焊至少两个铝或铝合金部件并提供阳极氧化涂层以及用于增加耐等离子体腐蚀性的原子层沉积涂层的装置和方法。
Description
技术领域
本发明涉及在半导体处理中使用的蚀刻室内的部件的钎焊和/或涂层。
背景技术
在等离子体处理室中,部件有时需要被接合在一起。接合部件的现有的方法可能会导致接头包含污染物。此外,这样的接头可能具有差的耐腐蚀性。因此,需要新的方法来接合等离子体室内的部件。
发明内容
本发明尤其公开了用于制造等离子体室部件的方法。该方法可以包括下述步骤中的任何或所有的步骤:提供由铝或铝合金制成的第一部件和第二部件;使用铝和硅的混合物钎焊所述第一部件和第二部件,以形成钎焊界面;阳极氧化所述第一部件和第二部件的至少一部分,使得在所述钎焊界面上形成阳极氧化涂层;以及使用原子层沉积共形地涂覆所述阳极氧化涂层,以形成ALD涂层。
在上述方法的多种进一步的实施方式中,所述ALD涂层可以是耐腐蚀的介电材料。所述ALD涂层可以是包含钇、锆和/或铝的耐等离子体腐蚀的氧化物。所述ALD涂层可以是氧化铝。所述铝和硅的混合物可以是包含5-20%的硅的大致共晶的混合物。所述钎焊可以在低于约120℃的温度下进行。所述第一部件可以是可以包含用于分配流体的一个或多个开放管道的流体分配板;在一种实施方式中,钎焊的步骤可以使所述开放管道至少部分地被所述第二部件的至少一部分包围。另外,所述第二部件可以包括穿过所述第二部件的一个或多个流体通道,所述流体通道可以具有第一端和第二端。此外,所述钎焊的步骤可以将每个第一端与所述管道中的至少一个连接以使它们之间流体连通。在另一种实施方式中,所述等离子体室部件可以是静电卡盘。
还公开了一种等离子体处理室的实施方式。该室可以包含由铝或铝合金制成的第一部件和第二部件。其可以包含包括铝和硅的混合物的在所述第一部件和第二部件之间的钎焊界面。其可以包含至少覆盖所述钎焊界面使得所述钎焊界面不暴露于组件的外部的阳极氧化涂层。其可以进一步包含通过原子层沉积在所述阳极氧化涂层上沉积的共形ALD涂层。
在上述等离子体处理室的多种进一步的实施方式中,所述第一部件可以是包含用于分配流体的一个或多个管道的流体分配板;所述管道的至少一部分可以被所述第二部件的至少一部分至少部分地包围。所述第二部件可以包括穿过所述第二部件的一个或多个流体通道;所述流体通道可以具有第一端和第二端;每个第一端可以开口朝向所述管道中的至少一个内以使它们之间流体连通。在进一步的实施方式中,所述ALD涂层可以是耐腐蚀的介电材料。所述ALD涂层可以是包含钇、锆和/或铝的耐等离子体腐蚀的氧化物。所述ALD涂层是氧化铝。所述铝和硅的混合物是包含5-20%的硅的大致共晶的混合物。上文所述的“组件”是静电卡盘。
具体而言,本发明的一些方面可以阐述如下:
1.一种用于制造等离子体室部件的方法,其包括:
提供由铝或铝合金制成的第一部件和第二部件;
使用铝和硅的混合物钎焊所述第一部件和第二部件,以形成钎焊界面;
阳极氧化所述第一部件和第二部件的至少一部分,使得在所述钎焊界面上形成阳极氧化涂层;以及
使用原子层沉积共形地涂覆所述阳极氧化涂层,以形成ALD涂层。
2.根据条款1所述的方法,其中所述ALD涂层是耐腐蚀的介电材料。
3.根据条款1所述的方法,其中所述ALD涂层是包含钇、锆和/或铝的耐等离子体腐蚀的氧化物。
4.根据条款3所述的方法,其中所述ALD涂层是氧化铝。
5.根据条款1所述的方法,其中所述铝和硅的混合物是包含5-20%的硅的大致共晶的混合物。
6.根据条款1所述的方法,其中所述钎焊是在低于约120℃的温度下进行的。
7.根据条款1所述的方法,其中所述第一部件是包含用于分配流体的一个或多个开放管道的流体分配板,其中钎焊的步骤使所述开放管道至少部分地被所述第二部件的至少一部分包围。
8.根据条款7所述的方法,其中所述第二部件包括穿过所述第二部件的一个或多个流体通道,所述流体通道具有第一端和第二端,并且其中所述钎焊的步骤将每个第一端与所述管道中的至少一个连接以使它们之间流体连通。
9.根据条款1所述的方法,其中所述等离子体室部件是静电卡盘。
10.一种用于等离子体处理室的组件,其包含:
由铝或铝合金制成的第一部件和第二部件;
包含铝和硅的混合物的在所述第一部件和第二部件之间的钎焊界面;
至少覆盖所述钎焊界面使得所述钎焊界面不暴露于所述组件的外部的阳极氧化涂层;以及
通过原子层沉积在所述阳极氧化涂层上沉积的共形ALD涂层。
11.根据条款10所述的组件,其中所述第一部件是包含用于分配流体的一个或多个管道的流体分配板,并且其中所述管道的至少一部分被所述第二部件的至少一部分至少部分地包围。
12.根据条款11所述的组件,其中所述第二部件包括穿过所述第二部件的一个或多个流体通道,所述流体通道具有第一端和第二端,并且其中每个第一端开口朝向所述管道中的至少一个内以使它们之间流体连通。
13.根据条款10所述的组件,其中所述ALD涂层是耐腐蚀的介电材料。
14.根据条款10所述的组件,其中所述ALD涂层是包含钇、锆和/或铝的耐等离子体腐蚀的氧化物。
15.根据条款14所述的组件,其中所述ALD涂层是氧化铝。
16.根据条款10所述的组件,其中所述铝和硅的混合物是包含5-20%的硅的大致共晶的混合物。
17.根据条款10所述的组件,其中所述组件是静电卡盘。
本发明的这些和其他特征将在本发明的详细描述中结合下面的附图在下文更详细地描述。
附图说明
所公开的发明在附图的图中通过举例的方式而不是通过限制的方式示出,且其中类似的附图标记指代相似的元件,并且其中:
图1A和1B是分别在钎焊之前和之后的示例性静电卡盘的示意性剖视图。
图2A和2B是分别在钎焊之前和之后的示例性气体分配系统的示意性剖视图。
具体实施方式
现在将参考本发明的如附图中所示的一些实施方式对本发明进行详细描述。在下面的描述中,一些具体细节被陈述以便提供对本发明的透彻理解。但本发明可在没有这些具体细节中的一些或全部的情况下被实施,并且本公开包括可以按照本技术领域中通常可用的知识做出的修改。公知的工艺步骤和/或结构不会被详细描述以避免不必要地使本发明难以理解。
为了例如创建用于输送气体或流体的腔,创建等离子体处理室的铝合金部件之间的气密接头往往是有用的。在一种实施方式中,创建这样的接头的一种方法是真空钎焊。在一种实施方式中,高含硅铝合金可以用作钎焊箔。例如,该箔可以包括Al 4047合金以及约12%的硅,这接近共晶组合物。硅浓度的范围可以在会包含约5-20%、或10-15%的限度内。也可使用其他组分,如镁,在一些实施方式中,镁可以用作消气剂,尤其是当钎焊在高于约570℃的温度下进行时。优选地,钎焊组合物是共晶的或接近共晶的,使得当混合物熔化时,固体组合物和液体组合物大致相同,且熔点比单种组分的熔点低。较低的熔点使得能够在较低温度下进行钎焊。具有高流动性的混合物是优选的,以制造更均匀且更共形的钎焊接头。
尽管含硅的真空钎焊可以提供坚实的结构接头,但其可能由于硅含量会导致一些问题。一个问题是,当这样的含硅钎焊接头被阳极氧化时,阳极氧化的质量可能由于阳极氧化中的硅微掩膜(micromasking)效果而会非常差。这会危及钎焊线的耐腐蚀性,特别是在电介质蚀刻室内当钎焊线邻近高腐蚀性的气体,如氯气、溴化氢或三氯化硼时。这种富硅钎焊线在暴露于等离子体时(例如,静电卡盘或气体分配板的边缘的钎焊线的外表面),可能会导致其他问题。例如,来自等离子体的氟自由基会优先蚀刻掉富硅相,降低接头的结构牢固度,引起剥落,或产生电弧或照亮的概率可能很高。
在一种实施方式中,钎焊线可以使用致密的、超级共形的、耐腐蚀的原子层沉积(ALD)氧化物涂层保护。在一种实施方式中,这样的涂层可以在阳极氧化的铝层上形成。ALD涂层甚至可以在低温(例如,在约120℃以下或甚至在20℃或30℃的室温)下进行沉积。在本实施方式中,钎焊线(例如,Al 6061)以外的表面上的阳极氧化物的热裂解可以被避免。另外,ALD涂层可以渗透到曲折的几何结构内,从而可以实现对钎焊线的充分保护,该钎焊线可以具有隐藏特征,例如内部气体管道。
ALD涂层的一些特征可以包括在低温下操作,从而避免在涂层期间阳极氧化层开裂的风险。因此,ALD涂层与阳极氧化工艺会是兼容的。此外,ALD可以形成既无针孔也无气孔的沉积物,从而提供抗腐蚀性气体和等离子体物质的优越的阻挡层。ALD涂层通常也是很纯的,而且可以被创建,其中除了或许来自涂层的铝以外,没有可以检测到的金属杂质。碳杂质也可被保持较低。ALD涂层也是超共形的,并且其涂层厚度是均匀的,以及深宽比是独立的。因此涂层可避免被涂敷的组件的维度方面的不期望有的改变。
示例性的ALD涂层材料可包括陶瓷,介电材料,氧化铝,氧化锆,氧化钇,铝、锆、钇和/或氧的组合(例如YAG或YSZ),具有耐腐蚀性的材料,以及如在本领域中公知的对自由基有优异的耐性的材料。在若干实施方式中,材料也可以是金属氧化物、氮化物、氟化物或碳化物、或它们的组合。
ALD涂层的方法在本领域是公知的。参见,例如,美国专利公开No.2014/0113457A1(公开于2014年4月24日),通过引用将其全部并入本文。他们使用表面介导的沉积反应以逐层地沉积薄膜。在一示例性的ALD工艺中,包含表面活性位点群的衬底表面暴露于气相分布的第一膜前体(P1)。一些P1分子可以在衬底表面上形成稠相,其包含化学吸附的物质和物理吸附的P1分子。然后将反应器抽空以除去气相和物理吸附的P1使得仅保留化学吸附的物质。然后将第二膜前体(P2)引入到反应器中,使得一些P2分子吸附到衬底表面。可以再次将反应器抽空,这一次是除去未结合的P2。随后,提供给衬底的热能量激活所吸附的P1分子和所吸附的P2分子之间的表面反应,从而形成薄膜层。最后,将反应器抽空以除去反应副产物和可能的未反应的P1和P2,从而结束ALD循环。可包括附加ALD循环以构建膜厚度。
实施例
图1A是示出了包含流体分配管道的静电卡盘的一实施方式的示意性剖视图。陶瓷板104可以结合到包含铝或铝合金(例如Al 6061)的基板108。在一实例中,该结合可通过聚合物粘合剂105实现。基板108可以包含用于气体或液体流动的管道109。这些管道可以例如形成于复杂的分配管道中,以冷却或加热静电卡盘。在本实施例中在也包含铝或铝合金的独立的部件111中,钎焊箔110可以定位在该部件的一侧上。
部件108和部件111可以通过经由钎焊箔110的钎焊来接合,如图1B所示,其可包含铝和硅的共晶混合物或准共晶混合物。部件可以被阳极氧化(优选在钎焊后),使得阳极氧化层114形成,以覆盖钎焊界面的至少一部分。阳极氧化可以在硫酸浴中使用电流来执行。接着,可以通过本领域中公知的原子层沉积方法在阳极氧化的、结合的部件上形成共形的ALD涂层115。
在另一实施方式中,图2A是图解包含用于通过喷头分配气体到等离子体室的管道的气体分配板的示意性横截面图。板208可包含铝或铝合金(例如Al 6061),并且可以包括用于气体流动的管道209。这些管道可以例如形成于复杂的分配管道中,以便分配各种气体至等离子体处理室的内部。在该实施例中,有独立的顶板211,其也可以包含铝或铝合金(例如Al 6061)。在一实施方式中,部件208可以是热控板,其可以经由管道212接合到喷头电极(未示出)。在一实施方式中,喷头电极可包含包括单晶硅、多晶硅、氮化硅或碳化硅在内的各种形式的硅。这样的电极的实例可以在美国专利No.8268117中找到,其通过引用整体并入本文。在顶板211上,钎焊箔210可以定位在朝向板208的那一侧上。在一实施方式中,板208可包含被设计为将流体从管道209载运至喷头电极的流体管道212。
部件208和部件211可以通过经由钎焊箔210的钎焊来接合,如图2B所示,其可包含铝和硅的共晶混合物或准共晶混合物。这些部件可以被阳极氧化(优选在钎焊后),使得阳极氧化层214形成,以覆盖钎焊界面的至少一部分。阳极氧化可以在硫酸浴中用电流来执行。但是,在许多情况下,在钎焊箔上的阳极氧化质量会是差的。接着,可以通过本领域中公知的原子层沉积方法在阳极氧化的、结合的部件上形成共形的ALD涂层215。
虽然已根据若干优选实施方式对本发明进行了描述,但还有落在本发明的范围内的变形、置换和各种替代的等同方案。此外还有实施本发明的方法和装置的许多替代方式。因此意在将下面所附的权利要求解释为包括所有这些落入本发明的真实精神和范围内的变形、置换和各种替代等同方案。
Claims (10)
1.一种用于制造等离子体室部件的方法,其包括:
提供由铝或铝合金制成的第一部件和第二部件;
使用铝和硅的混合物钎焊所述第一部件和第二部件,以形成钎焊界面;
阳极氧化所述第一部件和第二部件的至少一部分,使得在所述钎焊界面上形成阳极氧化涂层;以及
使用原子层沉积共形地涂覆所述阳极氧化涂层,以形成ALD涂层。
2.根据权利要求1所述的方法,其中所述ALD涂层是耐腐蚀的介电材料。
3.根据权利要求1所述的方法,其中所述ALD涂层是包含钇、锆和/或铝的耐等离子体腐蚀的氧化物。
4.根据权利要求3所述的方法,其中所述ALD涂层是氧化铝。
5.根据权利要求1所述的方法,其中所述铝和硅的混合物是包含5-20%的硅的大致共晶的混合物。
6.根据权利要求1所述的方法,其中所述钎焊是在低于约120℃的温度下进行的。
7.根据权利要求1所述的方法,其中所述第一部件是包含用于分配流体的一个或多个开放管道的流体分配板,其中钎焊的步骤使所述开放管道至少部分地被所述第二部件的至少一部分包围。
8.根据权利要求7所述的方法,其中所述第二部件包括穿过所述第二部件的一个或多个流体通道,所述流体通道具有第一端和第二端,并且其中所述钎焊的步骤将每个第一端与所述管道中的至少一个连接以使它们之间流体连通。
9.根据权利要求1所述的方法,其中所述等离子体室部件是静电卡盘。
10.一种用于等离子体处理室的组件,其包含:
由铝或铝合金制成的第一部件和第二部件;
包含铝和硅的混合物的在所述第一部件和第二部件之间的钎焊界面;
至少覆盖所述钎焊界面使得所述钎焊界面不暴露于所述组件的外部的阳极氧化涂层;以及
通过原子层沉积在所述阳极氧化涂层上沉积的共形ALD涂层。
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TWI755549B (zh) * | 2017-01-20 | 2022-02-21 | 美商應用材料股份有限公司 | 塗覆製品及塗覆腔室部件之方法 |
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CN113652669A (zh) * | 2017-01-20 | 2021-11-16 | 应用材料公司 | 通过原子层沉积获得的多层抗等离子体涂层 |
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CN108642475A (zh) * | 2017-01-20 | 2018-10-12 | 应用材料公司 | 一种制品及方法 |
CN113652669B (zh) * | 2017-01-20 | 2024-06-07 | 应用材料公司 | 通过原子层沉积获得的多层抗等离子体涂层 |
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CN112663059A (zh) * | 2019-10-16 | 2021-04-16 | 普因特工程有限公司 | 处理室的金属部件以及处理室的金属部件的层的形成方法 |
CN112713073A (zh) * | 2019-10-24 | 2021-04-27 | 中微半导体设备(上海)股份有限公司 | 一种耐腐蚀气体输送部件及其等离子体处理装置 |
CN112713073B (zh) * | 2019-10-24 | 2024-03-12 | 中微半导体设备(上海)股份有限公司 | 一种耐腐蚀气体输送部件及其等离子体处理装置 |
Also Published As
Publication number | Publication date |
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US20160375515A1 (en) | 2016-12-29 |
KR20170002306A (ko) | 2017-01-06 |
TW201724264A (zh) | 2017-07-01 |
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