CN106252453A - 基于一维纳米半导体结构表面态调控的自供能光电探测器及制备方法 - Google Patents
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Abstract
基于一维纳米半导体结构表面态调控的自供能光电探测器及制备方法，其特征是包括单根一维纳米半导体结构材料、金属电极、聚合物封装层、基片、导线；单根一维纳米半导体结构材料水平放置在基片的中间，金属电极位于单根一维纳米半导体结构材料的两端，并与导线连接，聚合物封装层将单根一维纳米半导体结构材料、金属电极覆盖在基片上。在100℃真空烘箱中保温24小时。本发明的自供能光电探测器，制备工艺简单，在继承原有光电探测器的优点上再利用宽禁带半导体材料的直接带隙作用，有效提高了器件的光电导增益、光响应度以及选择性，对实际应用非常有利。
Description
技术领域
本发明属于微纳米自供能光电探测器技术领域。
技术背景
随着光纤通信技术与军事应用技术的发展，半导体光电探测器进入了广阔的应用领域。同时，在新材料、新工艺以及新结构的快速发展下，半导体光电探测器的研究也逐渐深入，探索性能更加优越的半导体光电探测器成为光电探测器领域研究的重中之重。传统的光电探测器主要有两种工作方式：光电导型和光电二极管型，虽然此类半导体光电探测器具有很高的光电导增益和光响应度，但器件制备工艺复杂、成本高。因此，开发新型半导体光电探测器成为必要。近年来，一种依靠光生伏特效应的新型的光电探测器走入了我们的视野，即吸收太阳辐射的光子，产生光生电子空穴对，以一个光电子激发的过程将太阳能转化为电能，且不需要外加偏压进行驱动。自供能光电探测器具有环境适应性好、制备工艺简单、无需外偏压、响应时间快等优点，具有广阔的发展前景。
发明内容
本发明目的在于提出基于一维纳米半导体结构材料制作表面态调控的自供能光电探测器及其制备方法。
本发明是通过以下技术方案实现的。
本发明所述的基于一维纳米半导体结构表面态调控的自供能光电探测器，包括单根一维纳米半导体结构材料（1）、金属电极（2）、聚合物封装层（3）、基片（4）、导线（5）。单根一维纳米半导体结构材料（1）水平放置在基片（4）的中间，金属电极（2）位于单根一维纳米半导体结构材料（1）的两端，并与导线（5）连接，聚合物封装层（3）将单根一维纳米半导体结构材料（1）、金属电极（2）覆盖在基片（4）上。
所述的金属电极为银（Ag）、金（Au）或铂（Pt）。
所述的封装层采用聚二甲基硅氧烷（PDMS）作为封装材料。
所述的基片为kapton绝缘片。
所述的导线为铜导线。
本发明所述的基于一维纳米半导体结构表面态调控的自供能光电探测器的制备方法：在洁净平整的kapton绝缘片中间水平放置单根一维纳米半导体结构材料；在单根一维纳米半导体结构材料的两端点上金属电极，与此同时在两端金属电极处分别粘接导线，在洁净的大气环境中放置3-5小时；将聚二甲基硅氧烷（PDMS）缓慢均匀地贴覆在整个单根一维纳米半导体结构材料上，在100 ℃真空烘箱中保温24小时。
本发明的自供能光电探测器，制备工艺简单，在继承原有光电探测器的优点上再利用宽禁带半导体材料的直接带隙作用，有效提高了器件的光电导增益、光响应度以及选择性，对实际应用非常有利。
附图说明
图1基于单根一维纳米半导体结构表面态调控的自供能光电探测器正面剖视示意图。其中，1为单根一维纳米半导体材料；2为金属电极；3为聚合物封装层；4为基片；5为导线。
图2为单根一维CdS纳米结构的高分辨透射电子显微镜图（TEM）。
图3为单根一维CdS纳米结构在0 V偏压、功率密度为210μW/cm2的光照强度下，所测得的电流随入射波长的变化关系曲线。
图4为器件在0 V偏压、功率密度为210μW/cm2的可见光周期性光照下的on/off响应。
其中，图2的高分辨透射电子显微镜图（TEM）显示了规则排列的条纹，说明具有很好的生长取向。图3表示器件在波长为500 nm左右电流达到最大值。图4显示on/off比值为46，响应时间为0.2s，说明器件在可见光光照下具有很高的光电导增益和光响应度，预示着单根一维CdS纳米结构在表面态调控自供能光电探测器应用领域具有非常重要的实际意义。
具体实施方式
本发明将通过以下实施例作进一步说明。
实施例1。
在平整洁净的kapton绝缘片中间水平放置单根一维CdS纳米结构材料；在CdS纳米结构两端点上银浆，与此同时在两端银浆处分别粘接铜导线（直径为0.5 mm），在洁净大气环境中放置3-5小时；将聚二甲基硅氧烷（PDMS）缓慢均匀地贴覆在整个单根一维纳米结构材料及kapton绝缘片上，在100 ℃真空烘箱中保温24小时。
实施例2。
在平整洁净的kapton绝缘片中间水平放置单根一维SnO2纳米结构材料；在SnO2纳米结构两端点上银浆，与此同时在两端银浆处分别粘接铜导线（直径为0.5 mm），在洁净大气环境中放置3-5小时；将聚二甲基硅氧烷（PDMS）缓慢均匀地贴覆在整个单根一维纳米结构材料及kapton绝缘片上，在100 ℃真空烘箱中保温24小时。
实施例3。
在平整洁净的kapton绝缘片中间水平放置单根一维ZnO纳米结构材料；在ZnO纳米结构两端点上银浆，与此同时在两端银浆处分别粘接铜导线（直径为0.5 mm），在洁净大气环境中放置3-5小时；将聚二甲基硅氧烷（PDMS）缓慢均匀地贴覆在整个单根一维纳米结构材料及kapton绝缘片上，在100 ℃真空烘箱中保温24小时。
实施例4。
在平整洁净的kapton绝缘片中间水平放置单根一维PbS纳米结构材料；在PbS纳米结构两端点上银浆，与此同时在两端银浆处分别粘接铜导线（直径为0.5 mm），在洁净大气环境中放置3-5小时；将聚二甲基硅氧烷（PDMS）缓慢均匀地贴覆在整个单根一维纳米结构材料及kapton绝缘片上，在100 ℃真空烘箱中保温24小时。
本发明不局限与上述实施例，很多金属盐的制备都具有上述实施例的效果，而且很多细节的变化是可行的，但这并不因此违背本发明的范围和精神。
Claims (5)
1.基于一维纳米半导体结构表面态调控的自供能光电探测器，其特征是包括单根一维纳米半导体结构材料（1）、金属电极（2）、聚合物封装层（3）、基片（4）、导线（5）；单根一维纳米半导体结构材料（1）水平放置在基片（4）的中间，金属电极（2）位于单根一维纳米半导体结构材料（1）的两端，并与导线（5）连接，聚合物封装层（3）将单根一维纳米半导体结构材料（1）、金属电极（2）覆盖在基片（4）上。
2.根据权利要求1所述的光电探测器，其特征是所述的金属电极为银（Ag）、金（Au）或铂（Pt）。
3.根据权利要求1所述的光电探测器，其特征是所述的封装层为聚二甲基硅氧烷。
4.根据权利要求1所述的光电探测器，其特征是所述的基片为kapton绝缘片。
5.权利要求1-4中的任一权利要求所述的光电探测器的制备方法，其特征是按如下步骤：在洁净平整的kapton绝缘片中间水平放置单根一维纳米半导体结构材料；在单根一维纳米半导体结构材料的两端点上金属电极，与此同时在两端金属电极处分别粘接导线，在洁净的大气环境中放置3-5小时；将聚二甲基硅氧烷缓慢均匀地贴覆在整个单根一维纳米半导体结构材料上，在100 ℃真空烘箱中保温24小时。
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| CN1805156A (zh) * | 2006-01-13 | 2006-07-19 | 清华大学 | 基于一维半导体纳米结构的光电传感器及其制作方法 |
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| CN101592626A (zh) * | 2009-03-19 | 2009-12-02 | 苏州纳米技术与纳米仿生研究所 | 准一维金属氧化物纳米材料生物传感器及其制作方法 |
| US20100171059A1 (en) * | 2007-05-28 | 2010-07-08 | Asahi Organic Chemicals Industry Co., Ltd. | Valve |
| CN103928561A (zh) * | 2013-12-23 | 2014-07-16 | 南昌大学 | 基于单根氧化锌纳米线的光电响应探测器及制备方法 |
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| CN1805156A (zh) * | 2006-01-13 | 2006-07-19 | 清华大学 | 基于一维半导体纳米结构的光电传感器及其制作方法 |
| CN1818153A (zh) * | 2006-01-18 | 2006-08-16 | 浙江大学 | 一种制备硫化镉纳米线的方法 |
| US20100171059A1 (en) * | 2007-05-28 | 2010-07-08 | Asahi Organic Chemicals Industry Co., Ltd. | Valve |
| CN101592626A (zh) * | 2009-03-19 | 2009-12-02 | 苏州纳米技术与纳米仿生研究所 | 准一维金属氧化物纳米材料生物传感器及其制作方法 |
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Application publication date: 20161221 |