CN106252246A - Welding wire bonding technology that a kind of stannum bag is wrapped up in and chip packaging method - Google Patents
Welding wire bonding technology that a kind of stannum bag is wrapped up in and chip packaging method Download PDFInfo
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- CN106252246A CN106252246A CN201610763464.7A CN201610763464A CN106252246A CN 106252246 A CN106252246 A CN 106252246A CN 201610763464 A CN201610763464 A CN 201610763464A CN 106252246 A CN106252246 A CN 106252246A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85007—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector involving a permanent auxiliary member being left in the finished device, e.g. aids for holding or protecting the wire connector during or after the bonding process
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85009—Pre-treatment of the connector or the bonding area
- H01L2224/85051—Forming additional members, e.g. for "wedge-on-ball", "ball-on-wedge", "ball-on-ball" connections
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/858—Bonding techniques
- H01L2224/85801—Soldering or alloying
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- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/858—Bonding techniques
- H01L2224/85801—Soldering or alloying
- H01L2224/85815—Reflow soldering
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- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
- H01L2224/9222—Sequential connecting processes
- H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
- H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0105—Tin [Sn]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/37—Effects of the manufacturing process
- H01L2924/37001—Yield
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- Power Engineering (AREA)
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Abstract
The invention discloses welding wire bonding technology and chip packaging method that a kind of stannum bag is wrapped up in, belong to chip envelope and survey manufacture field.As follows: a, plant stannum ball: use pellet bonding machine to be heated by stannum silk, at each nip needing bonding wire of chip, plant a stannum ball in advance；B, folded ball: use pellet bonding machine to be heated by welding wire, stack bond ball on stannum ball；C, looping are got ready: after stacking bond ball, upwards looping arcing is to framework pin, forms bank, simultaneously bank not contact chip, and framework pin forms crescent solder joint；D, Reflow Soldering: step c chip is put into reflow machine, carry out Reflow Soldering, completes welding wire bonding technology.It can realize the effect avoiding chip nip impaired, welding wire bonding technology low cost.
Description
Technical field
The present invention relates to chip envelope and survey manufacture field, more particularly, it relates to the welding wire bonding technology that a kind of stannum bag is wrapped up in
And chip packaging method.
Background technology
MOS (Metal Oxide Semiconductor Field Effect Transistor, MOSFET) manages, i.e. gold
Belong to oxide semiconductor-type field effect transistor, belong to the insulated-gate type in field effect transistor.In electronic circuit, metal-oxide-semiconductor generally by with
In amplifying circuit or on-off circuit.High definition, liquid crystal, plasm TV are widely applied metal-oxide-semiconductor, to replace big merit in the past
Rate crystal triode, substantially increases the efficiency of complete machine, reliability, reduces the fault rate of complete machine.
MOS chip is generally with silicon as substrate, through peroxidating, photoetching, polysilicon deposition, impurity diffusion, deposited oxide layer, steaming
The techniques such as aluminum make and are formed.Including at least a metal-oxide-semiconductor in MOS chip.Generally, MOS chip, after completing, adds one
Individual shell, i.e. metal-oxide-semiconductor encapsulation.
In chip manufacturing proces, welding wire bonding development work is being carried out in nearly all semiconductor manufacturing commercial city, but owing to becoming
Some limitation of the problem of product rate and copper cash itself, they fail to enter in high-volume IC manufacturing industry.At present through welding wire
The optimization of bonding technology ground and the important improvement on welding wire and a holding equipment, in the IC chip envelope of low-grade and simple circuit design
Dress is produced in batches.Present in prior art, the MOS chip of CUP chip and nip weakness holds at welding wire bonding process
Being easily caused nip impaired, the chip that product exists quality and reliability hidden danger constrains some nips weak realizes volume production.
Chinese patent application, application number 200910117274.8, publication date on January 13rd, 2010, disclose a kind of copper cash
The production method of bonding IC chip package, sets a gold goal on the pad of IC chip, stacks copper bond ball, arch on gold goal
A brazing point is made a call in silk arcing in lead frame on pin, make the pad of IC chip be connected with lead frame pin.Plastic-sealed body
Cover the copper ball on the gold goal on IC chip, pad, stacking gold goal, looping arcing in lead frame the point of the brazing on pin and
Leadframe portion pin, constitutes the entirety of circuit.The production method of this invention includes that wafer is thinning, scribing, upper core, pressure welding,
Plastic packaging, rear solidification, printing, punching separation, check, pack, put in storage.This invention is avoided that generation crater, simple, and welds
Point intensity is strengthened, and the pulling force of copper-weld wire and the shearing force of solder joint, but can not be for bondings than the copper of direct routing (golden) key
Process is easily caused that nip is impaired to be improved, and uses gold goal, and owing to mobility and controlling are not enough, parcel property is strong,
Solder joint easily comes off, and relatively costly.
Summary of the invention
1. to solve the technical problem that
The MOS chip weak for CUP chip present in prior art and nip is easily led at welding wire bonding process
Cause nip is impaired, and product exists quality and reliability hidden danger, and the chip constraining some nips weak can not realize asking of volume production
Topic, the invention provides welding wire bonding technology and chip packaging method that a kind of stannum bag is wrapped up in.It can realize avoiding chip pressure
The effect that district is impaired, welding wire bonding technology low cost.
2. technical scheme
The purpose of the present invention is achieved through the following technical solutions.
The welding wire bonding technology that a kind of stannum bag is wrapped up in, step is as follows:
A, plant stannum ball: use pellet bonding machine to be heated by stannum silk, at each nip needing bonding wire of chip, plant a stannum in advance
Ball；
B, folded ball: use pellet bonding machine to be heated by welding wire, stack bond ball on stannum ball；
C, looping are got ready: after stacking bond ball, upwards looping arcing is to framework pin, forms bank, and bank does not connects simultaneously
Touching chip, framework pin forms crescent solder joint；
D, Reflow Soldering: step c chip is put into reflow machine, carry out Reflow Soldering, completes welding wire bonding technology.
Further, in described step a, pellet bonding machine temperature is 100-250 DEG C, and in step b, pellet bonding machine temperature is 150-
250 DEG C, after temperature first uniformly rises to 250 DEG C in two steps, drop quickly to 100 DEG C and 150 DEG C.
Further, in step d, Reflow Soldering temperature is 100-260 DEG C, and temperature curve is, Reflow Soldering temperature is at 0-
Uniformly rise to 260 DEG C between 400s, between rear 400-480s, uniformly drop to 100 DEG C.
Further, after step d, whether detection stannum ball wraps up bond ball surrounding after melting, and completes ball bonding, as the completeest
Become parcel, need to remove solder joint stannum ball, re-start and plant ball technique.
Further, chip is installed on framework Ji Dao by glue, chip by stack on stannum ball bond ball bank with
Framework pin connects.
A kind of chip packaging method of the welding wire bonding technology wrapped up in based on stannum bag, scribing thinning including wafer, load,
Ball bonding, plastic packaging, rear solidification, deflashing plating, punching separation, test printing braid, check, pack, warehousing process.
3. beneficial effect
Compared to prior art, it is an advantage of the current invention that:
(1) this programme is previously implanted stannum ball, then routing by chip nip before ball bonding, owing to stannum ball is softer, contrast with
The gold goal of prior art and other schemes, play the effect of buffer protection for chip nip；
(2) product by the first pad portion parcel, improves product the first solder joint jail through high temperature reflux postwelding, the fusing of stannum ball
Soundness；
(3) characteristic being mutually bonded for stannum ball and bond ball, have adjusted the temperature curve of Reflow Soldering, in Reflow Soldering temperature
Quickly it is bonded down, and can ensure that solder joint wraps up, fix rapidly；
(4) this programme passes through bonding technology so that bonding wire solder joint is uniformly wrapped in solder joint, it is ensured that between solder joint, electronics is suitable
Profit is passed through, and the electronics of all directions is by consistent, electrical characteristics outstanding, increases electronics by threshold value, carries out work at chip
When making, improve the communication efficiency of chip, overall chip functional promotion to a certain extent；
(5) this programme avoids ball bonding bonding process and is easily caused chip and crack occur, and product reliability yield improves, and carries
High product reliability and yield, can promote more than 10%, improves chip efficiency about 5%.
Accompanying drawing explanation
Fig. 1 is the chip structure schematic diagram after the present invention plants stannum ball；
Fig. 2 is the chip structure schematic diagram after looping of the present invention is got ready；
Fig. 3 is the chip structure schematic diagram after Reflow Soldering of the present invention；
Fig. 4 is the enlarged diagram of weld zone after Reflow Soldering of the present invention.
Label declaration in figure:
1, framework Ji Dao；2, glue；3, chip；4, stannum ball；5, bond ball；6, framework pin.
Detailed description of the invention
Below in conjunction with Figure of description and specific embodiment, the present invention is described in detail.
Embodiment 1
As Figure 1-4, this programme, for the welding wire that MOS and CUP chip nip is weaker, currently used, spun gold or copper
Silk is relatively big due to hardness, and it is impaired that ball bonding process is easily caused nip, and product produces crater, affects product yield, and the weldering of solder joint
Connecing imperfection, electrical characteristics are bad, and this programme provides the welding wire bonding technology that a kind of stannum bag is wrapped up in, and step is as follows:
A, plant stannum ball: use pellet bonding machine to be heated by stannum silk, at each nip needing bonding wire of chip 3, plant one in advance
Stannum ball 4, pellet bonding machine temperature is 100-250 DEG C, after temperature first uniformly rises to 250 DEG C, drops quickly to 100 DEG C；
B, folded ball: use pellet bonding machine to be heated by welding wire, stack bond ball 5 on stannum ball 4, and pellet bonding machine temperature is 150-
250 DEG C, after temperature first uniformly rises to 250 DEG C, drop quickly to 150 DEG C；Bond ball is soldered ball, and soldered ball can be
C, looping are got ready: after stacking bond ball 5, upwards looping arcing is to framework pin 6, forms bank, and bank is not simultaneously
Contact chip, framework pin 6 forms crescent solder joint；
D, Reflow Soldering: step c chip is put into reflow machine, carry out Reflow Soldering, completes welding wire bonding technology, Reflow Soldering temperature
Degree is for 100-260 DEG C, and temperature curve is, Reflow Soldering temperature uniformly rises to 260 DEG C between 0-400s, between rear 400-480s
Uniformly dropping to 100 DEG C, owing to Reflow Soldering herein needs to be bonded welding wire, the selection of temperature curve is even more important, and passes through
To stannum ball and the analysis of soldered ball, set this temperature curve, it is ensured that stannum ball can well melt at this temperature, and makes soldered ball
Stannum ball after being melted uniformly surrounds, and prevents from melting insufficient and a direction and lacks, the sound construction of postwelding, and electrical characteristics
Good.
Chip 3 is installed on framework base island 1 by glue 2, and chip 3 is by stacking bond ball 5 bank and frame tube on stannum ball 4
Foot 6 connects.
Embodiment 2
Embodiment 2 is substantially the same manner as Example 1, and difference is, after step d, adds detecting step, detects stannum ball 4
After whether melting, bond ball surrounding is wrapped up, complete ball bonding, wrap up as unfinished, need to remove solder joint stannum ball, re-start and plant
Stannum ball technique.Chip can be avoided to enter next step and cause the waste of subsequent technique, cost reduces.
Embodiment 3
A kind of chip packaging method including welding wire bonding technology that described stannum bag wraps up in, scribing thinning including wafer,
Load, ball bonding, plastic packaging, rear solidification, deflashing plating, punching separation, test printing braid, check, pack, warehousing process.Warp
Crossing above-mentioned technique to complete to be packaged overall chip, the chip after encapsulation consolidates, and electrical characteristics are good, and defective products rate declines, cost
Reduce.
Below being schematically described the invention and embodiment thereof, this description does not has restricted, not
In the case of deviating from the spirit or essential characteristics of the present invention, it is possible to realize the present invention in other specific forms.Institute in accompanying drawing
Show is also one of embodiment of the invention, and actual structure is not limited thereto, any attached in claim
Figure labelling should not limit involved claim.So, if those of ordinary skill in the art is enlightened by it, without departing from
In the case of this creation objective, design the frame mode similar to this technical scheme and embodiment without creative, all should
Belong to the protection domain of this patent." one " word additionally, " an including " word is not excluded for other elements or step, before element
It is not excluded for including " multiple " this element.In claim to a product multiple elements of statement can also by an element by software or
Person's hardware realizes.The first, the second word such as grade is used for representing title, and is not offered as any specific order.
Claims (6)
1. the welding wire bonding technology that stannum bag is wrapped up in, step is as follows:
A, plant stannum ball: use pellet bonding machine to be heated by stannum silk, at each nip needing bonding wire of chip (3), plant a stannum in advance
Ball (4)；
B, folded ball: use pellet bonding machine to be heated by welding wire, on stannum ball (4), stack bond ball (5)；
C, looping are got ready: after stacking bond ball (5), and upwards looping arcing is to framework pin (6), form bank, and bank is not simultaneously
Contact chip, framework pin (6) forms crescent solder joint；
D, Reflow Soldering: step c chip is put into reflow machine, carry out Reflow Soldering, completes welding wire bonding technology.
The welding wire bonding technology that a kind of stannum bag the most according to claim 1 is wrapped up in, it is characterised in that: in described step a
Pellet bonding machine temperature is 100-250 DEG C, and in step b, pellet bonding machine temperature is 150-250 DEG C, and in two steps, temperature first uniformly rises to
After 250 DEG C, drop quickly to 100 DEG C and 150 DEG C.
The welding wire bonding technology that a kind of stannum bag the most according to claim 1 is wrapped up in, it is characterised in that: in step d, Reflow Soldering
Temperature is 100-260 DEG C, and temperature curve is, Reflow Soldering temperature uniformly rises to 260 DEG C between 0-400s, rear 400-480s it
Between uniformly drop to 100 DEG C.
4. the welding wire bonding technology wrapped up according to a kind of stannum bag described in Claims 2 or 3, it is characterised in that: after step d, inspection
Survey after whether stannum ball (4) melts and bond ball surrounding is wrapped up, complete ball bonding, wrap up as unfinished, need to remove solder joint stannum ball, weight
Newly carry out planting stannum ball technique.
The welding wire bonding technology that a kind of stannum bag the most according to claim 1 is wrapped up in, it is characterised in that: chip (3) passes through glue
(2) being installed on framework Ji Dao (1), chip (3) is by stacking bond ball (5) bank with framework pin (6) even on stannum ball (4)
Connect.
6. the chip packaging method of the welding wire bonding technology that the stannum bag that a kind includes described in claim 1 is wrapped up in, it is characterised in that:
, scribing thinning including wafer, load, ball bonding, plastic packaging, rear solidification, deflashing plating, punching separation, test printing braid, inspection
Test, pack, warehousing process.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610763464.7A CN106252246B (en) | 2016-08-30 | 2016-08-30 | A kind of the welding wire bonding technology and chip packaging method of tin ball package |
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| CN201610763464.7A CN106252246B (en) | 2016-08-30 | 2016-08-30 | A kind of the welding wire bonding technology and chip packaging method of tin ball package |
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| CN106252246B CN106252246B (en) | 2018-08-24 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106783780A (en) * | 2016-12-21 | 2017-05-31 | 长电科技（宿迁）有限公司 | A kind of semiconductor package and its process |
| CN108321140A (en) * | 2018-01-17 | 2018-07-24 | 江苏海德半导体有限公司 | A kind of chip package ultrasonic welding process |
| CN109301059A (en) * | 2018-09-21 | 2019-02-01 | 佛山市国星光电股份有限公司 | Bonding wire packaging technology, LED component and the LED light of LED component |
| CN117690814A (en) * | 2024-01-16 | 2024-03-12 | 深圳维盛半导体科技有限公司 | Chip package internal ball mounting method and package structure |
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| CN101626008A (en) * | 2009-05-11 | 2010-01-13 | 天水华天科技股份有限公司 | Production method of encapsulated component of copper wire bonding IC chip |
| CN102437141A (en) * | 2011-12-09 | 2012-05-02 | 天水华天科技股份有限公司 | Dense-pitch small-pad copper-wire bonded single intelligent card (IC) chip packing piece and preparation method thereof |
| CN102437147B (en) * | 2011-12-09 | 2014-04-30 | 天水华天科技股份有限公司 | Dense-pitch small-pad copper-line bonded intelligent card (IC) chip stacking packing piece and preparation method thereof |
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