CN106252242B - A kind of package substrate and preparation method thereof - Google Patents
A kind of package substrate and preparation method thereof Download PDFInfo
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- CN106252242B CN106252242B CN201610837820.5A CN201610837820A CN106252242B CN 106252242 B CN106252242 B CN 106252242B CN 201610837820 A CN201610837820 A CN 201610837820A CN 106252242 B CN106252242 B CN 106252242B
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- 239000000758 substrate Substances 0.000 title claims abstract description 73
- 238000002360 preparation method Methods 0.000 title abstract description 5
- 239000002184 metal Substances 0.000 claims abstract description 102
- 229910052751 metal Inorganic materials 0.000 claims abstract description 102
- 238000004519 manufacturing process Methods 0.000 claims abstract description 29
- 238000005520 cutting process Methods 0.000 claims abstract description 10
- 238000002161 passivation Methods 0.000 claims description 11
- 238000012545 processing Methods 0.000 claims description 8
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 238000006263 metalation reaction Methods 0.000 claims description 6
- 238000005538 encapsulation Methods 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 238000003475 lamination Methods 0.000 claims description 2
- 238000000034 method Methods 0.000 description 17
- 238000010586 diagram Methods 0.000 description 9
- 238000013461 design Methods 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49805—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers the leads being also applied on the sidewalls or the bottom of the substrate, e.g. leadless packages for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49838—Geometry or layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Geometry (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Laminated Bodies (AREA)
Abstract
The embodiment of the invention discloses a kind of package substrates and preparation method thereof.The production method of the package substrate includes: that at least one layer of first line layer is formed on the support plate with metal layer；At least one lateral electrode column is formed on the surface of the support plate with metal layer on the first line layer；Dielectric layer is formed on the surface of the support plate with metal layer in the first line layer and the lateral electrode column, the lateral electrode column and the dielectric layer are seamlessly connected；The removal support plate for having metal layer；The dielectric layer and the first line layer are cut, cutting line passes through the lateral electrode column, so that the section of the lateral electrode column is exposed to except the dielectric layer, forms lateral electrode.Technical solution of the embodiment of the present invention can achieve the associativity for improving the metal and dielectric layer that are used as lateral electrode, and then improve the purpose of the yield of package substrate.
Description
Technical field
The present embodiments relate to encapsulation technologies more particularly to a kind of package substrate and preparation method thereof.
Background technique
With the fast development of wireless communication, automotive electronics and other consumer electronics products, microelectronic packaging technology to
Multi-functional, miniaturization, portable, high speed, low-power consumption and high reliability direction develop.
Fig. 1 is a kind of existing production method flow chart of package substrate.As shown in Figure 1, the system of existing package substrate
Making method mainly includes that the following steps are rapid: S110, forming line layer on the carrier with metal layer；S120, line layer with
And dielectric layer is made on the carrier with metal layer；S130, through-hole is formed on dielectric layer, which runs through the dielectric layer；
S140, metal for making lateral electrode is filled into the through-hole；S150, the carrier for having metal layer is removed；S160, to this
Dielectric layer and line layer are cut, which passes through the through-hole, to be used in the section of the metal of production lateral electrode
It is exposed to except the dielectric layer, forms lateral electrode.
In the manufacturing process of existing package substrate, when filling the metal for making lateral electrode into through-hole, it is
Ensure that subsequent technique can smoothly complete, metal will not be generally stuffed entirely in through-hole, i.e., it is past between the through-hole and metal
Toward meeting there are gap, this meeting is so that the associativity of metal and dielectric layer as lateral electrode is poor.In subsequent progress cutting technique or
When other techniques, the bad phenomenon filled and easily separated between metal and dielectric layer, and then package substrate is caused to scrap occurs.
Summary of the invention
The present invention provides a kind of package substrate and preparation method thereof, improves the metal and dielectric layer that are used as lateral electrode to realize
Associativity purpose.
In a first aspect, the embodiment of the invention provides a kind of production method of package substrate, the production side of the package substrate
Method includes:
At least first line layer is formed on the carrier with metal layer；
At least one lateral electrode is formed on the surface of the carrier with metal layer on the first line layer
Column；
It is formed on the surface of the carrier with metal layer in the first line layer and the lateral electrode column
Dielectric layer, the lateral electrode column and the dielectric layer are seamlessly connected；
The removal carrier for having metal layer；
The dielectric layer and the first line layer are cut, cutting line passes through the lateral electrode column, so that described
The section of lateral electrode column is exposed to except the dielectric layer, forms lateral electrode.
Further, the carrier with metal layer is carrier or two-sided with metal layer of the single side with metal layer
Carrier.
Further, the carrier with metal layer is the two-sided carrier with metal layer；
It includes described two-sided with metal layer that at least one layer of first line layer is formed on the carrier with metal layer
The two sides of carrier are respectively formed at least one layer of first line layer.
Further, the table of the carrier in the first line layer and the lateral electrode column described in metal layer
Dielectric layer is formed on face includes:
Pass through on the surface of the carrier with metal layer in the first line layer and the lateral electrode column
The mode of lamination or coating forms dielectric layer.
Further, the table of the support plate in the first line layer and the lateral electrode column described in metal layer
It is formed after dielectric layer on face:
The through-hole for running through the dielectric layer is formed on the dielectric layer；
At least one layer of second line layer of formation on surface of the dielectric layer away from the first line layer, described second
Line layer is electrically connected with the first line layer by the through-hole.
Further, include: after the removal carrier with metal layer
Paddle-tumble processing is carried out to the first line layer and the lateral electrode column from first line layer side, so that institute
It states lateral electrode column and is divided at least two parts, while the dielectric layer still attaches to together；
Surface metalation processing is carried out to the section of the first line layer and described lateral electrode column each section.
Further, the surface metalation processing includes: in the first line layer and described lateral electrode column each section
Section on form passivation layer.
Second aspect, the embodiment of the invention also provides a kind of package substrate, which includes:
At least one layer of first line layer；
At least one the lateral electrode column being formed on the first line layer；
The dielectric layer being formed on the first line layer and the lateral electrode column, and the lateral electrode column with given an account of
The seamless connection of matter layer；
Wherein, the section of the lateral electrode column is exposed to except the dielectric layer.
It further, further include the second line layer,
Second line layer is formed in the dielectric layer on the surface of the first line layer；
It further include the through-hole through the dielectric layer on the dielectric layer, second line layer passes through the through-hole and institute
State the electrical connection of first line layer.
It further, further include passivation layer,
The passivation layer formation deviates from the dielectric layer in the lateral electrode post part section and the first line layer
Surface on.
The embodiment of the present invention is using formation side electricity on the surface for first deviating from the carrier with metal layer on first line layer
Pole；Dielectric layer, lateral electrode are formed on the surface that first line layer and lateral electrode column deviate from the carrier with metal layer again
Column and dielectric layer are seamlessly connected；Finally the dielectric layer and first line layer are cut, cutting line passes through the lateral electrode column,
So that the section of the lateral electrode column is exposed to except the dielectric layer, the method for forming lateral electrode solves existing package substrate
In production, metal will not be generally stuffed entirely in through-hole, so that the associativity of metal and dielectric layer as lateral electrode is poor
The problem of, the associativity for improving the metal and dielectric layer that are used as lateral electrode is realized, and then improve the mesh of the yield of package substrate
's.
Detailed description of the invention
Fig. 1 is a kind of existing flow chart of the production method of package substrate；
Fig. 2 is a kind of flow chart of the production method of package substrate of the offer in the embodiment of the present invention one；
Fig. 3 a- Fig. 3 g is conducive in Fig. 2 during package substrate production method production package substrate, and package substrate is each
The structural schematic diagram of state；
Fig. 4 is the structural schematic diagram of package substrate during making package substrate；
Fig. 5 is that the present invention implements structural schematic diagram of the package substrate of two offers applied to actual scene when.
Specific embodiment
The present invention is described in further detail with reference to the accompanying drawings and examples.It is understood that this place is retouched
The specific embodiment stated is used only for explaining the present invention rather than limiting the invention.It also should be noted that in order to just
Only the parts related to the present invention are shown in description, attached drawing rather than entire infrastructure.
Embodiment one
Fig. 2 is a kind of flow chart of the production method for package substrate that the embodiment of the present invention one provides.Fig. 3 a-3g is to utilize
In Fig. 2 during package substrate production method production package substrate, the structural schematic diagram of each state of package substrate.In conjunction with figure
2 and Fig. 3 a-3g, is illustrated the production method of the package substrate.
The production method of the package substrate specifically comprises the following steps:
S210, at least one layer of first line layer is formed on the carrier with metal layer.
Carrier with metal layer refers to a kind of product that will be obtained after substrate and metal layer bonding by glue-line, such as covers
Copper sheet etc..A kind of structural schematic diagram of carrier with metal layer is illustratively given in Fig. 3 a.It, should be with gold referring to Fig. 3 a
The carrier 10 for belonging to layer includes substrate 11, metal layer 12 and is set between substrate 11 and metal layer 12 for bonding the substrate 11
With the glue-line 13 of the metal layer 12.
Specifically, being somebody's turn to do the carrier with metal layer can be the carrier or two-sided with metal layer that one-side band have metal layer
Carrier.Wherein, single side refers to the carrier of the only binding metal layer on certain one side of substrate with the carrier of metal layer.Double-sides belt
There is the carrier of metal layer to refer to the carrier of the equal binding metal layer on two sides of substrate.It, should be with metal layer in Fig. 3 a
Carrier 10 is the two-sided carrier with metal layer.
It forms at least one layer of first line layer on the carrier with metal layer to specifically refer to, in the carrier for having metal layer
In, metal layer forms at least one layer of first line layer on the surface of substrate.If the carrier that should have metal layer is double-sides belt
There is the carrier of metal layer, such as Fig. 3 b, at least one layer of First Line can be respectively formed in the two sides of the two-sided carrier with metal layer
Road floor 20.In addition to this it is possible to form at least one layer of first line in any side of the two-sided carrier with metal layer
Layer.It should be noted that if first line layer is respectively formed in the two sides of the two-sided carrier with metal layer, to carry out subsequent system
Make technique, the production of two pieces of package substrates can be completed at the same time, achievees the purpose that improve package substrate producing efficiency.In addition,
In Fig. 3 a, the two sides on the carrier with metal layer illustratively form one layer of first line layer, this is only the present invention
A specific example, rather than limitation of the present invention.It, can be in two on the carrier with metal layer in specific design
Side is respectively formed multilayer first line layer.Optionally, first line layer should be formed by with the two sides on the carrier of metal layer
The number of plies is not identical
S220, at least one side is formed on the surface of the carrier with metal layer on the first line layer
Electrode column.
Referring to Fig. 3 c, at least one is formed on the surface of the carrier 10 with metal layer on first line layer 20
Lateral electrode column 30.The lateral electrode column 30 includes the cross section 31 parallel with the 10 place plane of carrier of metal layer is had.Specific
When design, the shape of the cross section 31 can be round, ellipse, quadrangle or other anisotropy patterns etc..
S230, in the first line layer and the lateral electrode column on the surface of the carrier with metal layer
Dielectric layer is formed, the lateral electrode column and the dielectric layer are seamlessly connected.
Referring to Fig. 3 d, the shape on the surface that first line layer 20 and lateral electrode column 30 deviate from the carrier 10 with metal layer
At dielectric layer 40, the lateral electrode column 30 and dielectric layer 40 are seamlessly connected.Deviate from band in first line layer 20 and lateral electrode column 30
When having formation dielectric layer 40 on the surface of the carrier 10 of metal layer, it can be carried on the back using in first line layer 20 and lateral electrode column 30
Dielectric layer 40 is formed by way of being laminated or coating on surface from the carrier 10 with metal layer.
It should be noted that in specific design, the can also be formed on surface of the dielectric layer away from first line layer
Two line layers.Specifically, medium is formed on the surface that first line layer and lateral electrode column deviate from the support plate with metal layer
After layer, firstly, the through-hole for running through dielectric layer is formed on dielectric layer, then on the surface in dielectric layer away from first line layer
At least one layer of second line layer is formed, which is electrically connected with the first line layer by through-hole.Setting can be in this way
Enabling the package substrate, more easily multi-angle is electrically connected with other devices.
The carrier of metal layer is had described in S240, removal.
The concrete methods of realizing of this step includes: firstly, comparison diagram 3d and Fig. 3 e, removes the carrier for having metal layer 12
10 substrate 11；Finally, comparison diagram 3e and Fig. 3 f, removes the metal layer 12 in the carrier 10 using the method for etching.
It should be noted that due in the present embodiment only by two-sided with the carrier of metal layer for, to package substrate
Production method be illustrated.On the basis of the package substrate provided in Fig. 3 d, after removing the carrier 10 with metal layer,
Such as Fig. 3 f, the big plate 51 that can obtain two package substrates is (so merely exemplary that give the big plate an of package substrate in Fig. 3 f
51 structural schematic diagram).Multiple package substrates 52 are arranged in sequence on the big plate 51 of the package substrate.
S250, the dielectric layer, the first line layer being cut, cutting line passes through the lateral electrode column, so that
The section of the lateral electrode column is exposed to except the dielectric layer, forms lateral electrode.
Comparison diagram 3f and Fig. 3 g cuts dielectric layer 40, the first line layer 30 on the big plate 51 of the package substrate 52
It cuts, cutting line obtains package substrate so that the section 32 of lateral electrode column 30 is exposed to except dielectric layer 40 by lateral electrode column 30
52.As shown in figure 3g, wherein the lateral electrode column 30 after cutting is lateral electrode.It is right i.e. according to the position of each package substrate 52
The big plate 51 of the package substrate 52 is cut, and individual package substrate 52 is obtained.
The present embodiment technical solution is formed on the surface of the carrier with metal layer on first line layer using first
Lateral electrode column；Dielectric layer, side are formed on the surface that first line layer and lateral electrode column deviate from the carrier with metal layer again
Electrode column and dielectric layer are seamlessly connected；Finally the dielectric layer and first line layer are cut, cutting line is by side electricity
Pole, so that the section of the lateral electrode column is exposed to except the dielectric layer, the method for forming lateral electrode solves existing encapsulation
Substrate will not generally be stuffed entirely with metal in production in through-hole, so that being used as the combination of the metal and dielectric layer of lateral electrode
Property difference problem, realize improve be used as lateral electrode metal and dielectric layer associativity, and then improve package substrate yield
Purpose.
Further, it is contemplated that during use, if the section of the lateral electrode column be directly exposed to the dielectric layer it
Outside, it is oxidized easily, and then influences in subsequent routing or the reliability of welding procedure.For this purpose, optionally, such as Fig. 4, removing band
After having the carrier of metal layer, first line layer 20 and lateral electrode column 30 are carried out from paddle-tumble 53 from 20 side of first line layer
Reason, so that lateral electrode column 30 is divided at least two parts, while dielectric layer 40 still attaches to together；To 20 He of first line layer
The section of 30 each section of lateral electrode column carries out surface metalation processing.Here surface metalation processing may include: in First Line
Passivation layer is formed on the section of 30 each section of road floor 20 and lateral electrode column.For example, for example in first line layer 20 and lateral electrode column
The passivation layers such as NiPbAu or NiAu are formed on the section of 30 each sections.
Further, if the array substrate further includes the second line that dielectric layer is arranged on the surface of first line layer
Road floor, optionally, first line layer, lateral electrode column each section section and the second line layer on form passivation layer.In this way
The second line layer can be effectively prevented directly to be exposed to except the dielectric layer, the bad phenomenon for causing it to be oxidized occurs.
Embodiment two
The embodiment of the invention also provides a kind of package substrates.Referring to Fig. 5, the package substrate 52 include: at least one
One line layer 20；
At least one the lateral electrode column 30 being formed on the first line layer 20；
The dielectric layer 40 being formed on the first line layer 20 and the lateral electrode column 30, and the lateral electrode column 30
It is seamlessly connected with the dielectric layer 40；
Wherein, the section 32 of the lateral electrode column 30 is exposed to except the dielectric layer 40.
The present embodiment technical solution is formed on the surface of the carrier with metal layer on first line layer using first
Lateral electrode column；Dielectric layer, side are formed on the surface that first line layer and lateral electrode column deviate from the carrier with metal layer again
Electrode column and dielectric layer are seamlessly connected；Finally the dielectric layer and first line layer are cut, cutting line is by side electricity
Pole, so that the section of the lateral electrode column is exposed to except the dielectric layer, the method for forming lateral electrode solves existing encapsulation
Substrate will not generally be stuffed entirely with metal in production in through-hole, so that being used as the combination of the metal and dielectric layer of lateral electrode
Property difference problem, realize improve be used as lateral electrode metal and dielectric layer associativity, to improve the mesh of the yield of package substrate
's.
Further, which can also include the second line layer；Second line layer is formed in the medium
Layer is on the surface of the first line layer；It further include the through-hole through the dielectric layer on the dielectric layer, described second
Line layer is electrically connected by the through-hole with the first line layer.Setting can enable the package substrate to be more convenient in this way
Ground multi-angle is electrically connected with other devices.
Further, which can also include passivation layer, and the passivation layer formation is in the lateral electrode post part
Section and the first line layer are on the surface of the dielectric layer.The benefit being arranged in this way be can solve it is existing
The section of package substrate side electrode column is oxidized easily due to being directly exposed to except the dielectric layer, causes to influence subsequent
The problem of reliability in routing or welding procedure, reaches the mesh for improving the reliability of the subsequent routing of package substrate or welding procedure
's.
As shown in figure 5, in the package substrate 52, lateral electrode surfacing is applicable to that the encapsulation of side electrode will be had
The techniques such as wiring are carried out after the setting of substrate in lateral electrode.In addition to this it is possible to carry out such as drilling on package substrate
Technique.
It should be noted that package substrate production method provided in an embodiment of the present invention can be used for making the embodiment of the present invention
The package substrate of offer.
Note that the above is only a better embodiment of the present invention and the applied technical principle.It will be appreciated by those skilled in the art that
The invention is not limited to the specific embodiments described herein, be able to carry out for a person skilled in the art it is various it is apparent variation,
It readjusts and substitutes without departing from protection scope of the present invention.Therefore, although being carried out by above embodiments to the present invention
It is described in further detail, but the present invention is not limited to the above embodiments only, without departing from the inventive concept, also
It may include more other equivalent embodiments, and the scope of the invention is determined by the scope of the appended claims.
Claims (10)
1. a kind of production method of package substrate characterized by comprising
At least one layer of first line layer is formed on the support plate with metal layer；
At least one lateral electrode column is formed on the surface of the support plate with metal layer on the first line layer；
Medium is formed on the surface of the support plate with metal layer in the first line layer and the lateral electrode column
Layer, the lateral electrode column and the dielectric layer are seamlessly connected；
The removal support plate for having metal layer；
The dielectric layer and the first line layer are cut, cutting line passes through the lateral electrode column, so that the side is electric
The section of pole is exposed to except the dielectric layer, forms lateral electrode.
2. production method according to claim 1, which is characterized in that the support plate with metal layer has for single side
The support plate of metal layer or the two-sided support plate with metal layer.
3. production method according to claim 2, which is characterized in that the support plate with metal layer is two-sided has
The support plate of metal layer；
It includes in the two-sided support plate with metal layer that at least one layer of first line layer is formed on the support plate with metal layer
Two sides be respectively formed at least one layer of first line layer.
4. production method according to claim 1, which is characterized in that in the first line layer and the lateral electrode
Column forms dielectric layer on the surface of the support plate with metal layer
Pass through lamination on the surface of the support plate with metal layer in the first line layer and the lateral electrode column
Or the mode of coating forms dielectric layer.
5. production method according to claim 1, which is characterized in that in the first line layer and the lateral electrode
Column is formed after dielectric layer on the surface of the support plate with metal layer, comprising:
The through-hole for running through the dielectric layer is formed on the dielectric layer；
At least one layer of second line layer, second route are formed on surface of the dielectric layer away from the first line layer
Layer is electrically connected with the first line layer by the through-hole.
6. production method according to claim 1, which is characterized in that wrapped after the removal support plate with metal layer
It includes:
Paddle-tumble processing is carried out to the first line layer and the lateral electrode column from first line layer side, so that the side
Electrode column is divided at least two parts, while the dielectric layer still attaches to together；
Surface metalation processing is carried out to the section of the first line layer and described lateral electrode column each section.
7. production method according to claim 6, which is characterized in that the surface metalation processing includes: described
Passivation layer is formed on first line layer and the section of described lateral electrode column each section.
8. a kind of package substrate, which is characterized in that the package substrate utilizes the encapsulation base of any of claims 1-7
The production method of plate makes to be formed；
The package substrate includes:
At least one layer of first line layer；
At least one the lateral electrode column being formed on the first line layer；
The dielectric layer being formed on the first line layer and the lateral electrode column, and the lateral electrode column and the dielectric layer
Seamless connection；
Wherein, the section of the lateral electrode column is exposed to except the dielectric layer.
9. package substrate according to claim 8, which is characterized in that further include the second line layer；
Second line layer is formed in the dielectric layer on the surface of the first line layer；
It further include the through-hole through the dielectric layer on the dielectric layer, second line layer passes through the through-hole and described the
The electrical connection of one line layer.
10. package substrate according to claim 8, which is characterized in that further include passivation layer；
The passivation layer formation deviates from the table of the dielectric layer in the lateral electrode post part section and the first line layer
On face.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610837820.5A CN106252242B (en) | 2016-09-20 | 2016-09-20 | A kind of package substrate and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610837820.5A CN106252242B (en) | 2016-09-20 | 2016-09-20 | A kind of package substrate and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106252242A CN106252242A (en) | 2016-12-21 |
| CN106252242B true CN106252242B (en) | 2019-01-04 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610837820.5A Active CN106252242B (en) | 2016-09-20 | 2016-09-20 | A kind of package substrate and preparation method thereof |
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| Country | Link |
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| CN1454045A (en) * | 2002-04-25 | 2003-11-05 | 松下电器产业株式会社 | Wiring transfer sheet material and producing method thereof, wiring substrate and producing method thereof |
| US20040157410A1 (en) * | 2003-01-16 | 2004-08-12 | Seiko Epson Corporation | Semiconductor device, semiconductor module, electronic equipment, method for manufacturing semiconductor device, and method for manufacturing semiconductor module |
| CN101989592A (en) * | 2009-07-30 | 2011-03-23 | 全懋精密科技股份有限公司 | Packaging substrate as well as manufacturing method and base material thereof |
| US7939947B2 (en) * | 2006-10-03 | 2011-05-10 | Samsung Electronics Co., Ltd. | Semiconductor package structure |
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| CN1454045A (en) * | 2002-04-25 | 2003-11-05 | 松下电器产业株式会社 | Wiring transfer sheet material and producing method thereof, wiring substrate and producing method thereof |
| US20040157410A1 (en) * | 2003-01-16 | 2004-08-12 | Seiko Epson Corporation | Semiconductor device, semiconductor module, electronic equipment, method for manufacturing semiconductor device, and method for manufacturing semiconductor module |
| US7939947B2 (en) * | 2006-10-03 | 2011-05-10 | Samsung Electronics Co., Ltd. | Semiconductor package structure |
| CN101989592A (en) * | 2009-07-30 | 2011-03-23 | 全懋精密科技股份有限公司 | Packaging substrate as well as manufacturing method and base material thereof |
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