CN106252242A - A kind of base plate for packaging and preparation method thereof - Google Patents
A kind of base plate for packaging and preparation method thereof Download PDFInfo
- Publication number
- CN106252242A CN106252242A CN201610837820.5A CN201610837820A CN106252242A CN 106252242 A CN106252242 A CN 106252242A CN 201610837820 A CN201610837820 A CN 201610837820A CN 106252242 A CN106252242 A CN 106252242A
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- lateral electrode
- line layer
- layer
- metal level
- dielectric layer
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- 238000004806 packaging method and process Methods 0.000 title claims abstract description 62
- 238000002360 preparation method Methods 0.000 title abstract description 5
- 239000002184 metal Substances 0.000 claims abstract description 102
- 229910052751 metal Inorganic materials 0.000 claims abstract description 102
- 238000000034 method Methods 0.000 claims abstract description 43
- 238000004519 manufacturing process Methods 0.000 claims abstract description 20
- 238000005520 cutting process Methods 0.000 claims abstract description 8
- 238000002161 passivation Methods 0.000 claims description 11
- 238000006263 metalation reaction Methods 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 238000003475 lamination Methods 0.000 claims description 3
- 239000000758 substrate Substances 0.000 description 11
- 238000005538 encapsulation Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49805—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers the leads being also applied on the sidewalls or the bottom of the substrate, e.g. leadless packages for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49838—Geometry or layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Geometry (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Laminated Bodies (AREA)
Abstract
The embodiment of the invention discloses a kind of base plate for packaging and preparation method thereof.The manufacture method of this base plate for packaging includes: form at least one of which first line layer on the support plate with metal level；Described first line layer deviate from described with forming at least one lateral electrode post on the surface of the support plate of metal level；Deviate from described with forming dielectric layer, described lateral electrode post and described dielectric layer seamless link on the surface of the support plate of metal level at described first line layer and described lateral electrode post；Remove the described support plate with metal level；Cutting described dielectric layer and described first line layer, line of cut is through described lateral electrode post, so that the section of described lateral electrode post is exposed to outside described dielectric layer, forms lateral electrode.Embodiment of the present invention technical scheme can reach to improve the associativity of metal and the dielectric layer being used as lateral electrode, and then improves the purpose of the yield of base plate for packaging.
Description
Technical field
The present embodiments relate to encapsulation technology, particularly relate to a kind of base plate for packaging and preparation method thereof.
Background technology
Along with the fast development of radio communication, automotive electronics and other consumer electronics products, microelectronic packaging technology to
Multi-functional, miniaturization, portable, at high speed, the direction of low-power consumption and high reliability develops.
Fig. 1 is the manufacture method flow chart of existing a kind of base plate for packaging.As it is shown in figure 1, the system of existing base plate for packaging
Make method and mainly include that the following steps are rapid: S110, formation line layer on the carrier with metal level；S120, line layer with
And on the carrier with metal level, make dielectric layer；S130, on dielectric layer formed through hole, this through hole runs through this dielectric layer；
S140, fill in this through hole for making the metal of lateral electrode；S150, remove this carrier with metal level；S160, to this
Dielectric layer and line layer cut, and this line of cut is through described through hole, to be used in the section of the metal making lateral electrode
It is exposed to outside described dielectric layer, forms lateral electrode.
In the manufacturing process of existing base plate for packaging, when filling the metal for making lateral electrode in through hole, for
Guarantee that subsequent technique can smoothly complete, typically will not be stuffed entirely with metal in through hole, i.e. past between this through hole and metal
Toward leaving gap, it is poor that this can make as the metal of lateral electrode and the associativity of dielectric layer.Follow-up carry out cutting technique or
During other techniques, easily separate between filler metal with dielectric layer, and then the bad phenomenon causing base plate for packaging to be scrapped occurs.
Summary of the invention
The present invention provides a kind of base plate for packaging and preparation method thereof, to realize improving the metal as lateral electrode and dielectric layer
The purpose of associativity.
First aspect, embodiments provides the manufacture method of a kind of base plate for packaging, the making side of this base plate for packaging
Method includes:
Carrier with metal level is formed at least first line layer；
Described first line layer deviate from described with forming at least one lateral electrode on the surface of the carrier of metal level
Post；
Deviate from described with formation on the surface of the carrier of metal level at described first line layer and described lateral electrode post
Dielectric layer, described lateral electrode post and described dielectric layer seamless link；
Remove the described carrier with metal level；
Cutting described dielectric layer and described first line layer, line of cut is through described lateral electrode post, so that described
The section of lateral electrode post is exposed to outside described dielectric layer, forms lateral electrode.
Further, the described carrier with metal level is the one side carrier or two-sided with metal level with metal level
Carrier.
Further, the described carrier with metal level is the two-sided carrier with metal level；
Carrier with metal level is formed at least one of which first line layer and is included in described two-sided with metal level
The both sides of carrier are respectively formed at least one of which first line layer.
Further, the table of the described carrier with metal level is deviated from described first line layer and described lateral electrode post
Form dielectric layer on face to include:
Pass through with on the surface of the carrier of metal level described in deviating from described first line layer and described lateral electrode post
The mode of lamination or coating forms dielectric layer.
Further, the table of the described support plate with metal level is deviated from described first line layer and described lateral electrode post
After forming dielectric layer on face:
Described dielectric layer is formed the through hole running through described dielectric layer；
Formation at least one of which the second line layer on the surface that described dielectric layer deviates from described first line layer, described second
Line layer is electrically connected by described through hole with described first line layer.
Further, include after removing the described carrier with metal level:
From described first line layer side, described first line layer and described lateral electrode post are carried out paddle-tumble process, so that institute
Stating lateral electrode post is divided at least two part, the most described dielectric layer to remain attached to together；
The section of described first line layer and described lateral electrode post each several part is carried out surface metalation process.
Further, described surface metalation processes and includes: at described first line layer and described lateral electrode post each several part
Section on formed passivation layer.
Second aspect, the embodiment of the present invention additionally provides a kind of base plate for packaging, and this base plate for packaging includes:
At least one of which first line layer；
At least one the lateral electrode post being formed on described first line layer；
Be formed at the dielectric layer on described first line layer and described lateral electrode post, and described lateral electrode post with given an account of
Matter layer seamless link；
Wherein, the section of described lateral electrode post is exposed to outside described dielectric layer.
Further, also include the second line layer,
Described second line layer is formed at described dielectric layer to deviate from the surface of described first line layer；
Also including the through hole running through described dielectric layer on described dielectric layer, described second line layer passes through described through hole and institute
State the electrical connection of first line layer.
Further, also include passivation layer,
Described passivation layer is formed at described lateral electrode post cut-away section and described first line layer deviates from described dielectric layer
Surface on.
The embodiment of the present invention uses and first deviates from first line layer with forming side electricity on the surface of the carrier of metal level
Pole；Deviate from forming dielectric layer, lateral electrode on the surface of the carrier of metal level at first line layer and lateral electrode post again
Post and dielectric layer seamless link；Finally cutting this dielectric layer and first line layer, line of cut passes through this lateral electrode post,
So that the section of this lateral electrode post is exposed to outside this dielectric layer, the method forming lateral electrode, solve existing base plate for packaging
When making, metal typically will not be stuffed entirely with in through hole so that poor as the metal of lateral electrode and the associativity of dielectric layer
Problem, it is achieved that improve the associativity of the metal and the dielectric layer that are used as lateral electrode, and then improve the mesh of the yield of base plate for packaging
's.
Accompanying drawing explanation
Fig. 1 is the flow chart of the manufacture method of existing a kind of base plate for packaging；
Fig. 2 is the flow chart of the manufacture method of a kind of base plate for packaging of the offer in the embodiment of the present invention one；
Fig. 3 a-Fig. 3 g is that in beneficially Fig. 2, base plate for packaging manufacture method makes during base plate for packaging, base plate for packaging each
The structural representation of state；
Fig. 4 is during making base plate for packaging, the structural representation of base plate for packaging；
Fig. 5 is the structural representation that the present invention implements when the base plate for packaging of two offers is applied to actual scene.
Detailed description of the invention
The present invention is described in further detail with embodiment below in conjunction with the accompanying drawings.It is understood that this place is retouched
The specific embodiment stated is used only for explaining the present invention, rather than limitation of the invention.It also should be noted that, in order to just
Part related to the present invention is illustrate only rather than entire infrastructure in description, accompanying drawing.
Embodiment one
The flow chart of the manufacture method of a kind of base plate for packaging that Fig. 2 provides for the embodiment of the present invention one.Fig. 3 a-3g is for utilizing
During in Fig. 2, base plate for packaging manufacture method makes base plate for packaging, the structural representation of each state of base plate for packaging.In conjunction with figure
2 and Fig. 3 a-3g, illustrate the manufacture method of this base plate for packaging.
The manufacture method of this base plate for packaging specifically includes following steps:
S210, on the carrier with metal level formed at least one of which first line layer.
With the carrier of metal level, a kind of product obtained after referring to be bondd with metal level by substrate by glue-line, as covered
Copper coin etc..Fig. 3 a exemplarily gives the structural representation of a kind of carrier with metal level.See Fig. 3 a, should be with gold
The carrier 10 belonging to layer includes substrate 11, metal level 12 and is arranged between substrate 11 and metal level 12 for this substrate 11 that bonds
Glue-line 13 with this metal level 12.
Specifically, can should be that one-side band has the carrier of metal level or two-sided with metal level with the carrier of metal level
Carrier.Wherein, one side refers to the only carrier of binding metal layer on certain one side of substrate with the carrier of metal level.Double-sided belt
The carrier having metal level refers to the carrier of equal binding metal layer on two sides of substrate.In Fig. 3 a, should be with metal level
Carrier 10 is the two-sided carrier with metal level.
Carrier with metal level is formed at least one of which first line layer specifically refer to, at the carrier with metal level
In, metal level deviates from formation at least one of which first line layer on the surface of substrate.If should be double-sided belt with the carrier of metal level
There is the carrier of metal level, such as Fig. 3 b, at least one of which First Line can be respectively formed in these two-sided both sides with the carrier of metal level
Road floor 20.In addition to this it is possible to form at least one of which first line in any side of this two-sided carrier with metal level
Layer.If it should be noted that being respectively formed first line layer in these two-sided both sides with the carrier of metal level, to carry out follow-up system
Make technique, the making of two pieces of base plate for packaging can be completed simultaneously, reach to improve the purpose of base plate for packaging make efficiency.It addition,
In Fig. 3 a, the both sides on the carrier with metal level the most exemplarily define one layer of first line layer, and this is only the present invention
A concrete example, rather than limitation of the present invention.When specific design, can on this carrier with metal level two
Side is respectively formed multilamellar first line layer.Alternatively, the first line layer that the both sides being somebody's turn to do on the carrier with metal level are formed
The number of plies differs
S220, deviate from described first line layer described with forming at least one side on the surface of the carrier of metal level
Electrode column.
See Fig. 3 c, first line layer 20 deviates from this and forms at least one with on the surface of the carrier 10 of metal level
Lateral electrode post 30.This lateral electrode post 30 includes the cross section 31 parallel with the carrier 10 place plane with metal level.Specifically
During design, the shape of this cross section 31 can be circular, oval, tetragon or other anisotropy pattern etc..
S230, deviate from described first line layer and described lateral electrode post described with on the surface of the carrier of metal level
Form dielectric layer, described lateral electrode post and described dielectric layer seamless link.
See Fig. 3 d, deviate from shape on the surface of the carrier 10 of metal level at first line layer 20 and lateral electrode post 30
Become dielectric layer 40, this lateral electrode post 30 and dielectric layer 40 seamless link.Band is deviated from first line layer 20 and lateral electrode post 30
Have metal level carrier 10 surface on formed dielectric layer 40 time, can use and carry on the back at first line layer 20 and lateral electrode post 30
By the way of lamination or coating, dielectric layer 40 is formed on the surface with the carrier 10 of metal level.
It should be noted that when specific design, it is also possible to form the on the surface that dielectric layer deviates from first line layer
Two line layers.Specifically, deviate from forming medium on the surface of the support plate of metal level at first line layer and lateral electrode post
After Ceng, first, dielectric layer is formed the through hole running through dielectric layer, then deviates from dielectric layer on the surface of first line layer
Forming at least one of which the second line layer, this second line layer is electrically connected by through hole with this first line layer.So arrange permissible
This base plate for packaging can multi-angle be electrically connected with other devices more easily.
S240, the described carrier with metal level of removal.
The concrete methods of realizing of this step includes: first, comparison diagram 3d and Fig. 3 e, removes this carrier with metal level 12
The substrate 11 of 10；Finally, comparison diagram 3e and Fig. 3 f, utilize the method for etching to remove the metal level 12 in this carrier 10.
It should be noted that due to the most only as a example by the two-sided carrier with metal level, to base plate for packaging
Manufacture method illustrate.On the basis of the base plate for packaging provided in Fig. 3 d, after removing the carrier 10 with metal level,
Such as Fig. 3 f, big plate 51 (in Fig. 3 f merely exemplary the big plate giving a base plate for packaging of two base plate for packaging can be obtained
The structural representation of 51).The big plate 51 of this base plate for packaging is arranged in sequence with multiple base plate for packaging 52.
S250, described dielectric layer, described first line layer are cut, line of cut through described lateral electrode post so that
The section of described lateral electrode post is exposed to outside described dielectric layer, forms lateral electrode.
Comparison diagram 3f and Fig. 3 g, cuts the dielectric layer 40 on the big plate 51 of this base plate for packaging 52, first line layer 30
Cutting, line of cut is through lateral electrode post 30, so that the section 32 of lateral electrode post 30 is exposed to, outside dielectric layer 40, obtain base plate for packaging
52.As shown in figure 3g, the lateral electrode post 30 after the most cleaved is lateral electrode.I.e. according to the position of each base plate for packaging 52, right
The big plate 51 of this base plate for packaging 52 cuts, and obtains single base plate for packaging 52.
The present embodiment technical scheme uses first to deviate from first line layer and is formed with on the surface of the carrier of metal level
Lateral electrode post；Deviate from forming dielectric layer, side on the surface of the carrier of metal level at first line layer and lateral electrode post again
Electrode column and dielectric layer seamless link；Finally cutting this dielectric layer and first line layer, line of cut is through this side electricity
Pole, so that the section of this lateral electrode post is exposed to outside this dielectric layer, the method forming lateral electrode, solve existing encapsulation
Substrate, when making, typically will not be stuffed entirely with metal in through hole so that as metal and the combination of dielectric layer of lateral electrode
Property difference problem, it is achieved that improve the associativity of the metal and the dielectric layer that are used as lateral electrode, and then improve the yield of base plate for packaging
Purpose.
Further, it is contemplated that use during, if the section of this lateral electrode post be directly exposed to this dielectric layer it
Outward, it is oxidized easily, and then impact is in follow-up routing or the reliability of welding procedure.To this end, alternatively, such as Fig. 4, band is being removed
After having the carrier of metal level, carry out at paddle-tumble 53 from first line layer 20 side to first line layer 20 and lateral electrode post 30
Reason, so that lateral electrode post 30 is divided at least two part, dielectric layer 40 remains attached to together simultaneously；To first line layer 20 He
The section of lateral electrode post 30 each several part carries out surface metalation process.Here surface metalation processes and may include that at First Line
Passivation layer is formed on the section of road floor 20 and lateral electrode post 30 each several part.Such as, such as at first line layer 20 and lateral electrode post
The passivation layers such as NiPbAu or NiAu are formed on the section of 30 each several parts.
Further, if this array base palte also includes being arranged on the second line that dielectric layer deviates from the surface of first line layer
Road floor, alternatively, forms passivation layer on first line layer, the section of lateral electrode post each several part and the second line layer.So
Can effectively prevent the second line layer to be directly exposed to outside this dielectric layer, cause its oxidized bad phenomenon to occur.
Embodiment two
The embodiment of the present invention additionally provides a kind of base plate for packaging.Seeing Fig. 5, this base plate for packaging 52 includes: at least one is years old
One line layer 20；
At least one the lateral electrode post 30 being formed on described first line layer 20；
It is formed at the dielectric layer 40 on described first line layer 20 and described lateral electrode post 30, and described lateral electrode post 30
With the seamless link of described dielectric layer 40；
Wherein, the section 32 of described lateral electrode post 30 is exposed to outside described dielectric layer 40.
The present embodiment technical scheme uses first to deviate from first line layer and is formed with on the surface of the carrier of metal level
Lateral electrode post；Deviate from forming dielectric layer, side on the surface of the carrier of metal level at first line layer and lateral electrode post again
Electrode column and dielectric layer seamless link；Finally cutting this dielectric layer and first line layer, line of cut is through this side electricity
Pole, so that the section of this lateral electrode post is exposed to outside this dielectric layer, the method forming lateral electrode, solve existing encapsulation
Substrate, when making, typically will not be stuffed entirely with metal in through hole so that as metal and the combination of dielectric layer of lateral electrode
Property difference problem, it is achieved improve the associativity of the metal and the dielectric layer that are used as lateral electrode, to improve the mesh of the yield of base plate for packaging
's.
Further, this base plate for packaging can also include the second line layer；Described second line layer is formed at described medium
Layer deviates from the surface of described first line layer；The through hole running through described dielectric layer is also included on described dielectric layer, described second
Line layer is electrically connected with described first line layer by described through hole.So arrange so that this base plate for packaging can be more convenient
Ground multi-angle electrically connects with other devices.
Further, this base plate for packaging can also include that passivation layer, described passivation layer are formed at described lateral electrode post part
Section and described first line layer deviate from the surface of described dielectric layer.The benefit so arranged is to solve existing
Outside the section of base plate for packaging side electrode post is owing to being directly exposed to this dielectric layer, it is oxidized easily, causes impact follow-up
The problem of the reliability in routing or welding procedure, reaches to improve the mesh of the reliability of the follow-up routing of base plate for packaging or welding procedure
's.
As it is shown in figure 5, in this base plate for packaging 52, lateral electrode surfacing, it is applicable to the encapsulation with side electrode
In lateral electrode, the techniques such as wiring are carried out after the setting of substrate.In addition to this it is possible to carry out such as boring etc. on base plate for packaging
Technique.
It should be noted that the base plate for packaging manufacture method that the embodiment of the present invention provides can be used for making the embodiment of the present invention
The base plate for packaging provided.
Note, above are only presently preferred embodiments of the present invention and institute's application technology principle.It will be appreciated by those skilled in the art that
The invention is not restricted to specific embodiment described here, can carry out for a person skilled in the art various obvious change,
Readjust and substitute without departing from protection scope of the present invention.Therefore, although by above example, the present invention is carried out
It is described in further detail, but the present invention is not limited only to above example, without departing from the inventive concept, also
Other Equivalent embodiments more can be included, and the scope of the present invention is determined by scope of the appended claims.
Claims (10)
1. the manufacture method of a base plate for packaging, it is characterised in that including:
Support plate with metal level is formed at least one of which first line layer；
Described first line layer deviate from described with forming at least one lateral electrode post on the surface of the support plate of metal level；
Deviate from described with forming medium on the surface of the support plate of metal level at described first line layer and described lateral electrode post
Layer, described lateral electrode post and described dielectric layer seamless link；
Remove the described support plate with metal level；
Cutting described dielectric layer and described first line layer, line of cut is through described lateral electrode post, so that described side is electric
The section of pole is exposed to outside described dielectric layer, forms lateral electrode.
2. according to the manufacture method described in claim 1, it is characterised in that the described support plate with metal level be one side with
The support plate of metal level or the two-sided support plate with metal level.
3. according to the manufacture method described in claim 2, it is characterised in that the described support plate with metal level be two-sided with
The support plate of metal level；
Support plate with metal level is formed at least one of which first line layer and is included in the described two-sided support plate with metal level
Both sides be respectively formed at least one of which first line layer.
4. according to the manufacture method described in claim 1, it is characterised in that in described first line layer and described lateral electrode
Post includes with formation dielectric layer on the surface of the support plate of metal level described in deviating from:
Deviate from described with passing through lamination on the surface of the support plate of metal level at described first line layer and described lateral electrode post
Or the mode of coating forms dielectric layer.
5. according to the manufacture method described in claim 1, it is characterised in that in described first line layer and described lateral electrode
Post deviate from described with forming dielectric layer on the surface of the support plate of metal level after, including:
Described dielectric layer is formed the through hole running through described dielectric layer；
The surface that described dielectric layer deviates from described first line layer is formed at least one of which the second line layer, described second circuit
Layer is electrically connected by described through hole with described first line layer.
6. according to the manufacture method described in claim 1, it is characterised in that wrap after removing the described support plate with metal level
Include:
From described first line layer side, described first line layer and described lateral electrode post are carried out paddle-tumble process, so that described side
Electrode column is divided at least two part, the most described dielectric layer to remain attached to together；
The section of described first line layer and described lateral electrode post each several part is carried out surface metalation process.
7. according to the manufacture method described in claim 6, it is characterised in that described surface metalation processes and includes: described
Passivation layer is formed on the section of first line layer and described lateral electrode post each several part.
8. a base plate for packaging, it is characterised in that including:
At least one of which first line layer；
At least one the lateral electrode post being formed on described first line layer；
It is formed at the dielectric layer on described first line layer and described lateral electrode post, and described lateral electrode post and described dielectric layer
Seamless link；
Wherein, the section of described lateral electrode post is exposed to outside described dielectric layer.
Base plate for packaging described in the most according to Claim 8, it is characterised in that also include the second line layer；
Described second line layer is formed at described dielectric layer to deviate from the surface of described first line layer；
Also including the through hole running through described dielectric layer on described dielectric layer, described second line layer is by described through hole and described the
One line layer electrical connection.
Base plate for packaging described in the most according to Claim 8, it is characterised in that also include passivation layer；
Described passivation layer is formed at described lateral electrode post cut-away section and described first line layer deviates from the table of described dielectric layer
On face.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610837820.5A CN106252242B (en) | 2016-09-20 | 2016-09-20 | A kind of package substrate and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610837820.5A CN106252242B (en) | 2016-09-20 | 2016-09-20 | A kind of package substrate and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110010477A (en) * | 2018-10-10 | 2019-07-12 | 浙江集迈科微电子有限公司 | A kind of closed radio frequency chip packaging technology of side heat radiating type |
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| CN1454045A (en) * | 2002-04-25 | 2003-11-05 | 松下电器产业株式会社 | Wiring transfer sheet material and producing method thereof, wiring substrate and producing method thereof |
| US20040157410A1 (en) * | 2003-01-16 | 2004-08-12 | Seiko Epson Corporation | Semiconductor device, semiconductor module, electronic equipment, method for manufacturing semiconductor device, and method for manufacturing semiconductor module |
| CN101989592A (en) * | 2009-07-30 | 2011-03-23 | 全懋精密科技股份有限公司 | Packaging substrate as well as manufacturing method and base material thereof |
| US7939947B2 (en) * | 2006-10-03 | 2011-05-10 | Samsung Electronics Co., Ltd. | Semiconductor package structure |
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| CN1454045A (en) * | 2002-04-25 | 2003-11-05 | 松下电器产业株式会社 | Wiring transfer sheet material and producing method thereof, wiring substrate and producing method thereof |
| US20040157410A1 (en) * | 2003-01-16 | 2004-08-12 | Seiko Epson Corporation | Semiconductor device, semiconductor module, electronic equipment, method for manufacturing semiconductor device, and method for manufacturing semiconductor module |
| US7939947B2 (en) * | 2006-10-03 | 2011-05-10 | Samsung Electronics Co., Ltd. | Semiconductor package structure |
| CN101989592A (en) * | 2009-07-30 | 2011-03-23 | 全懋精密科技股份有限公司 | Packaging substrate as well as manufacturing method and base material thereof |
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| CN110010477A (en) * | 2018-10-10 | 2019-07-12 | 浙江集迈科微电子有限公司 | A kind of closed radio frequency chip packaging technology of side heat radiating type |
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| CN106252242B (en) | 2019-01-04 |
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