CN106249938B - 导电性基板及导电性基板的制造方法 - Google Patents
导电性基板及导电性基板的制造方法 Download PDFInfo
- Publication number
- CN106249938B CN106249938B CN201610382066.0A CN201610382066A CN106249938B CN 106249938 B CN106249938 B CN 106249938B CN 201610382066 A CN201610382066 A CN 201610382066A CN 106249938 B CN106249938 B CN 106249938B
- Authority
- CN
- China
- Prior art keywords
- blackening layer
- copper
- conductive board
- layers
- transparent substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 29
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 161
- 229910052802 copper Inorganic materials 0.000 claims abstract description 161
- 239000010949 copper Substances 0.000 claims abstract description 161
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 120
- 239000000758 substrate Substances 0.000 claims abstract description 119
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 60
- 229910000480 nickel oxide Inorganic materials 0.000 claims abstract description 44
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 claims abstract description 43
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 41
- 229910001930 tungsten oxide Inorganic materials 0.000 claims abstract description 41
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 claims abstract description 40
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 26
- 239000010937 tungsten Substances 0.000 claims abstract description 26
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims abstract description 22
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 21
- 238000005530 etching Methods 0.000 claims description 48
- 239000007789 gas Substances 0.000 claims description 35
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 33
- 229910052760 oxygen Inorganic materials 0.000 claims description 33
- 239000001301 oxygen Substances 0.000 claims description 33
- 238000004544 sputter deposition Methods 0.000 claims description 30
- 238000002310 reflectometry Methods 0.000 claims description 19
- 238000002441 X-ray diffraction Methods 0.000 claims description 7
- 150000001875 compounds Chemical class 0.000 claims description 6
- VVRQVWSVLMGPRN-UHFFFAOYSA-N oxotungsten Chemical compound [W]=O VVRQVWSVLMGPRN-UHFFFAOYSA-N 0.000 claims description 6
- 238000002360 preparation method Methods 0.000 claims description 5
- 239000010410 layer Substances 0.000 description 353
- 239000010408 film Substances 0.000 description 105
- 238000000034 method Methods 0.000 description 25
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 24
- 239000000243 solution Substances 0.000 description 22
- 238000003475 lamination Methods 0.000 description 17
- 229910052786 argon Inorganic materials 0.000 description 12
- 238000007747 plating Methods 0.000 description 9
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- 230000009257 reactivity Effects 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- -1 tungsten nitride Chemical class 0.000 description 6
- 238000012360 testing method Methods 0.000 description 5
- 208000003351 Melanosis Diseases 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000012212 insulator Substances 0.000 description 4
- FBAFATDZDUQKNH-UHFFFAOYSA-M iron chloride Chemical compound [Cl-].[Fe] FBAFATDZDUQKNH-UHFFFAOYSA-M 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- MOWMLACGTDMJRV-UHFFFAOYSA-N nickel tungsten Chemical compound [Ni].[W] MOWMLACGTDMJRV-UHFFFAOYSA-N 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 239000000470 constituent Substances 0.000 description 3
- 230000007613 environmental effect Effects 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 239000004952 Polyamide Substances 0.000 description 2
- 230000004523 agglutinating effect Effects 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 150000001925 cycloalkenes Chemical class 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 150000002148 esters Chemical class 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000002932 luster Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 2
- 229920002647 polyamide Polymers 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 1
- 241000207961 Sesamum Species 0.000 description 1
- 235000003434 Sesamum indicum Nutrition 0.000 description 1
- 230000003466 anti-cipated effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000007767 bonding agent Substances 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-N carbonic acid Chemical compound OC(O)=O BVKZGUZCCUSVTD-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 150000005690 diesters Chemical class 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 1
- 229920002521 macromolecule Polymers 0.000 description 1
- XIKYYQJBTPYKSG-UHFFFAOYSA-N nickel Chemical compound [Ni].[Ni] XIKYYQJBTPYKSG-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910017464 nitrogen compound Inorganic materials 0.000 description 1
- 150000002830 nitrogen compounds Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- KUCOHFSKRZZVRO-UHFFFAOYSA-N terephthalaldehyde Chemical compound O=CC1=CC=C(C=O)C=C1 KUCOHFSKRZZVRO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
- H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
- G06F3/0448—Details of the electrode shape, e.g. for enhancing the detection of touches, for generating specific electric field shapes, for enhancing display quality
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
- H01B1/026—Alloys based on copper
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
- G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
- G06F2203/04112—Electrode mesh in capacitive digitiser: electrode for touch sensing is formed of a mesh of very fine, normally metallic, interconnected lines that are almost invisible to see. This provides a quite large but transparent electrode surface, without need for ITO or similar transparent conductive material
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Human Computer Interaction (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Quality & Reliability (AREA)
- Laminated Bodies (AREA)
- Physical Vapour Deposition (AREA)
- Non-Insulated Conductors (AREA)
- Manufacturing Of Electric Cables (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015-113772 | 2015-06-04 | ||
| JP2015113772A JP6365422B2 (ja) | 2015-06-04 | 2015-06-04 | 導電性基板の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106249938A CN106249938A (zh) | 2016-12-21 |
| CN106249938B true CN106249938B (zh) | 2019-02-12 |
Family
ID=57575479
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610382066.0A Active CN106249938B (zh) | 2015-06-04 | 2016-06-01 | 导电性基板及导电性基板的制造方法 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP6365422B2 (ja) |
| KR (1) | KR20160143535A (ja) |
| CN (1) | CN106249938B (ja) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI654628B (zh) * | 2017-12-01 | 2019-03-21 | 鼎展電子股份有限公司 | 黑著層及具有該黑著層的透明導電結構 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008311565A (ja) * | 2007-06-18 | 2008-12-25 | Dainippon Printing Co Ltd | ディスプレイ用複合フィルタ |
| TW201325336A (zh) * | 2011-11-04 | 2013-06-16 | Jx Nippon Mining & Metals Corp | 印刷電路用銅箔 |
| JP2013129183A (ja) * | 2011-11-22 | 2013-07-04 | Toray Ind Inc | 積層体 |
| CN104603886A (zh) * | 2012-08-31 | 2015-05-06 | Lg化学株式会社 | 导电结构及其制造方法 |
| WO2015064664A1 (ja) * | 2013-10-31 | 2015-05-07 | 住友金属鉱山株式会社 | 導電性基板、導電性基板の製造方法 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4086132B2 (ja) | 2001-11-16 | 2008-05-14 | 株式会社ブリヂストン | 透明導電性フィルムおよびタッチパネル |
| FR2835534B1 (fr) * | 2002-02-06 | 2004-12-24 | Saint Gobain | CIBLE CERAMIQUE NiOx NON STOECHIOMETRIQUE |
| JP5056190B2 (ja) * | 2007-06-14 | 2012-10-24 | 住友金属鉱山株式会社 | 耐熱遮光フィルムとその製造方法、及びそれを用いた絞り又は光量調整用装置 |
| JP5361579B2 (ja) | 2009-07-09 | 2013-12-04 | 信越ポリマー株式会社 | 大型ディスプレイ用のセンサパネル及びその製造方法 |
| JP2013069261A (ja) | 2011-09-08 | 2013-04-18 | Dainippon Printing Co Ltd | タッチパネル用電極基材、及びタッチパネル、並びに画像表示装置 |
| KR20140023492A (ko) * | 2012-08-16 | 2014-02-27 | 삼성코닝정밀소재 주식회사 | 스퍼터링 타겟 및 이에 의해 증착된 블랙 매트릭스를 포함하는 유기 발광 디스플레이 장치 |
| JP2015064337A (ja) * | 2013-08-30 | 2015-04-09 | キヤノン株式会社 | 微細構造体の製造方法 |
-
2015
- 2015-06-04 JP JP2015113772A patent/JP6365422B2/ja active Active
-
2016
- 2016-05-31 KR KR1020160067337A patent/KR20160143535A/ko not_active Application Discontinuation
- 2016-06-01 CN CN201610382066.0A patent/CN106249938B/zh active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008311565A (ja) * | 2007-06-18 | 2008-12-25 | Dainippon Printing Co Ltd | ディスプレイ用複合フィルタ |
| TW201325336A (zh) * | 2011-11-04 | 2013-06-16 | Jx Nippon Mining & Metals Corp | 印刷電路用銅箔 |
| JP2013129183A (ja) * | 2011-11-22 | 2013-07-04 | Toray Ind Inc | 積層体 |
| CN104603886A (zh) * | 2012-08-31 | 2015-05-06 | Lg化学株式会社 | 导电结构及其制造方法 |
| WO2015064664A1 (ja) * | 2013-10-31 | 2015-05-07 | 住友金属鉱山株式会社 | 導電性基板、導電性基板の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106249938A (zh) | 2016-12-21 |
| JP2017002328A (ja) | 2017-01-05 |
| KR20160143535A (ko) | 2016-12-14 |
| JP6365422B2 (ja) | 2018-08-01 |
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|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
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| GR01 | Patent grant | ||
| GR01 | Patent grant |