CN106243357B - 可湿式剥去的含硅抗反射剂 - Google Patents

可湿式剥去的含硅抗反射剂 Download PDF

Info

Publication number
CN106243357B
CN106243357B CN201610389823.7A CN201610389823A CN106243357B CN 106243357 B CN106243357 B CN 106243357B CN 201610389823 A CN201610389823 A CN 201610389823A CN 106243357 B CN106243357 B CN 106243357B
Authority
CN
China
Prior art keywords
polymer
dihydrofuran
group
monomers
siloxane
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201610389823.7A
Other languages
English (en)
Chinese (zh)
Other versions
CN106243357A (zh
Inventor
O·昂加依
C·卡特勒
M·李
S·山田
J·卡梅伦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DuPont Electronic Materials International LLC
Original Assignee
Rohm and Haas Electronic Materials LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm and Haas Electronic Materials LLC filed Critical Rohm and Haas Electronic Materials LLC
Publication of CN106243357A publication Critical patent/CN106243357A/zh
Application granted granted Critical
Publication of CN106243357B publication Critical patent/CN106243357B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/09Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/04Polysiloxanes
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04Polysiloxanes
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04Polysiloxanes
    • C08G77/14Polysiloxanes containing silicon bound to oxygen-containing groups
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04Polysiloxanes
    • C08G77/14Polysiloxanes containing silicon bound to oxygen-containing groups
    • C08G77/18Polysiloxanes containing silicon bound to oxygen-containing groups to alkoxy or aryloxy groups
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04Polysiloxanes
    • C08G77/20Polysiloxanes containing silicon bound to unsaturated aliphatic groups
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04Polysiloxanes
    • C08G77/22Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen and oxygen
    • C08G77/26Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen and oxygen nitrogen-containing groups
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04Polysiloxanes
    • C08G77/22Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen and oxygen
    • C08G77/28Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen and oxygen sulfur-containing groups
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/80Siloxanes having aromatic substituents, e.g. phenyl side groups
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/04Polysiloxanes
    • C09D183/06Polysiloxanes containing silicon bound to oxygen-containing groups
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/04Polysiloxanes
    • C09D183/08Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen, and oxygen
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0042Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
    • G03F7/0043Chalcogenides; Silicon, germanium, arsenic or derivatives thereof; Metals, oxides or alloys thereof
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/075Silicon-containing compounds
    • G03F7/0752Silicon-containing compounds in non photosensitive layers or as additives, e.g. for dry lithography
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16Coating processes; Apparatus therefor
    • G03F7/168Finishing the coated layer, e.g. drying, baking, soaking
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/30Imagewise removal using liquid means
    • G03F7/32Liquid compositions therefor, e.g. developers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Metallurgy (AREA)
  • Silicon Polymers (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
CN201610389823.7A 2015-06-15 2016-06-02 可湿式剥去的含硅抗反射剂 Expired - Fee Related CN106243357B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/739,402 US9442377B1 (en) 2015-06-15 2015-06-15 Wet-strippable silicon-containing antireflectant
US14/739402 2015-06-15

Publications (2)

Publication Number Publication Date
CN106243357A CN106243357A (zh) 2016-12-21
CN106243357B true CN106243357B (zh) 2019-07-23

Family

ID=56881349

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201610389823.7A Expired - Fee Related CN106243357B (zh) 2015-06-15 2016-06-02 可湿式剥去的含硅抗反射剂

Country Status (5)

Country Link
US (2) US9442377B1 (https=)
JP (2) JP2017020000A (https=)
KR (1) KR101849638B1 (https=)
CN (1) CN106243357B (https=)
TW (1) TWI600724B (https=)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107077072B (zh) * 2014-11-19 2021-05-25 日产化学工业株式会社 能够湿式除去的含有硅的抗蚀剂下层膜形成用组合物
US10043162B1 (en) 2015-03-31 2018-08-07 Square, Inc. Open ticket payment handling with bill splitting
US10528945B1 (en) 2015-03-31 2020-01-07 Square, Inc. Open ticket payment handling with incremental authorization
US10658191B2 (en) * 2015-09-04 2020-05-19 Taiwan Semiconductor Manufacturing Company, Ltd. Conformal middle layer for a lithography process
US10410883B2 (en) * 2016-06-01 2019-09-10 Corning Incorporated Articles and methods of forming vias in substrates
US10311420B1 (en) 2016-06-17 2019-06-04 Square, Inc. Synchronizing open ticket functionality with kitchen display systems
US10580062B1 (en) * 2016-06-28 2020-03-03 Square, Inc. Integrating predefined templates with open ticket functionality
US10794679B2 (en) 2016-06-29 2020-10-06 Corning Incorporated Method and system for measuring geometric parameters of through holes
US10007184B2 (en) * 2016-09-01 2018-06-26 Rohm And Haas Electronic Materials Llc Silicon-containing underlayers
US11506979B2 (en) * 2016-12-14 2022-11-22 Rohm And Haas Electronic Materials Llc Method using silicon-containing underlayers
US20180164685A1 (en) * 2016-12-14 2018-06-14 Rohm And Haas Electronic Materials Llc Method using silicon-containing underlayers
KR102577038B1 (ko) * 2017-03-31 2023-09-12 닛산 가가쿠 가부시키가이샤 카르보닐구조를 갖는 실리콘함유 레지스트 하층막 형성 조성물
US11078112B2 (en) 2017-05-25 2021-08-03 Corning Incorporated Silica-containing substrates with vias having an axially variable sidewall taper and methods for forming the same
US10580725B2 (en) 2017-05-25 2020-03-03 Corning Incorporated Articles having vias with geometry attributes and methods for fabricating the same
KR102674631B1 (ko) 2017-07-06 2024-06-12 닛산 가가쿠 가부시키가이샤 알칼리성 현상액 가용성 실리콘함유 레지스트 하층막 형성 조성물
US11360387B2 (en) * 2017-08-04 2022-06-14 Rohm And Haas Electronic Materials Llc Silicon-containing underlayers
US10761423B2 (en) 2017-08-30 2020-09-01 Taiwan Semiconductor Manufacturing Company, Ltd. Chemical composition for tri-layer removal
US10943311B1 (en) 2017-09-29 2021-03-09 Square, Inc. Order fulfillment and tracking systems and methods
US20190146343A1 (en) 2017-11-10 2019-05-16 Rohm And Haas Electronic Materials Llc Silicon-containing underlayers
US12180108B2 (en) 2017-12-19 2024-12-31 Corning Incorporated Methods for etching vias in glass-based articles employing positive charge organic molecules
US11554984B2 (en) 2018-02-22 2023-01-17 Corning Incorporated Alkali-free borosilicate glasses with low post-HF etch roughness
US11138680B1 (en) 2018-11-21 2021-10-05 Square, Inc. Updating menus based on predicted efficiencies
US10915905B1 (en) 2018-12-13 2021-02-09 Square, Inc. Batch-processing transactions in response to an event
US20220187709A1 (en) * 2019-03-28 2022-06-16 Nissan Chemical Corporation Film-forming composition
WO2021020091A1 (ja) * 2019-07-29 2021-02-04 Jsr株式会社 組成物、ケイ素含有膜、ケイ素含有膜の形成方法及び半導体基板の処理方法
JP7692902B2 (ja) * 2019-10-24 2025-06-16 ブルーワー サイエンス アイ エヌ シー. シリコン含有高水分除去可能平坦化層
CN115003759B (zh) * 2020-01-15 2023-12-01 株式会社钟化 树脂组合物、其制造方法、以及多组分型固化性树脂组合物
KR102924234B1 (ko) * 2020-03-31 2026-02-09 닛산 가가쿠 가부시키가이샤 막 형성용 조성물
US12585188B2 (en) 2020-04-30 2026-03-24 Nissan Chemical Corporation Composition for forming resist underlying film

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009019093A (ja) * 2007-07-11 2009-01-29 Asahi Kasei Electronics Co Ltd ポリオルガノシロキサン
WO2009111122A3 (en) * 2008-03-04 2009-10-29 Dow Corning Corporation Silsesquioxane resins
CN101622296A (zh) * 2007-02-27 2010-01-06 Az电子材料美国公司 硅基抗反射涂料组合物

Family Cites Families (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03100021A (ja) * 1989-09-14 1991-04-25 Nippon Telegr & Teleph Corp <Ntt> ポリシロキサン
JP4096138B2 (ja) 1999-04-12 2008-06-04 Jsr株式会社 レジスト下層膜用組成物の製造方法
US6268457B1 (en) 1999-06-10 2001-07-31 Allied Signal, Inc. Spin-on glass anti-reflective coatings for photolithography
US6890448B2 (en) 1999-06-11 2005-05-10 Shipley Company, L.L.C. Antireflective hard mask compositions
US6420088B1 (en) 2000-06-23 2002-07-16 International Business Machines Corporation Antireflective silicon-containing compositions as hardmask layer
US6730454B2 (en) 2002-04-16 2004-05-04 International Business Machines Corporation Antireflective SiO-containing compositions for hardmask layer
US6740469B2 (en) 2002-06-25 2004-05-25 Brewer Science Inc. Developer-soluble metal alkoxide coatings for microelectronic applications
JP3951124B2 (ja) 2002-12-06 2007-08-01 Jsr株式会社 絶縁膜
ATE377036T1 (de) 2003-05-23 2007-11-15 Dow Corning Siloxan-harz basierte anti- reflektionsbeschichtung mit hoher nassätzgeschwindigkeit
US7270887B2 (en) 2004-10-13 2007-09-18 Shin-Etsu Chemical Co., Ltd. Antireflective coating, coating composition, and antireflective coated article
EP1762895B1 (en) 2005-08-29 2016-02-24 Rohm and Haas Electronic Materials, L.L.C. Antireflective Hard Mask Compositions
US7678529B2 (en) 2005-11-21 2010-03-16 Shin-Etsu Chemical Co., Ltd. Silicon-containing film forming composition, silicon-containing film serving as etching mask, substrate processing intermediate, and substrate processing method
KR101436336B1 (ko) 2005-12-06 2014-09-01 닛산 가가쿠 고교 가부시키 가이샤 광가교 경화의 레지스트 하층막을 형성하기 위한 규소 함유레지스트 하층막 형성 조성물
JP4421566B2 (ja) 2005-12-26 2010-02-24 チェイル インダストリーズ インコーポレイテッド フォトレジスト下層膜用ハードマスク組成物及びこれを利用した半導体集積回路デバイスの製造方法
JP5369553B2 (ja) * 2007-09-07 2013-12-18 東レ株式会社 シロキサン樹脂組成物、硬化物およびこれを用いた光半導体
JP2009265595A (ja) * 2007-09-07 2009-11-12 Sekisui Chem Co Ltd 感光性組成物及びパターン膜の製造方法
JP2010039051A (ja) * 2008-08-01 2010-02-18 Sekisui Chem Co Ltd 感光性組成物及びパターン膜の製造方法
JP2010039056A (ja) * 2008-08-01 2010-02-18 Sekisui Chem Co Ltd 感光性組成物及びパターン膜の製造方法
US7955782B2 (en) 2008-09-22 2011-06-07 Honeywell International Inc. Bottom antireflective coatings exhibiting enhanced wet strip rates, bottom antireflective coating compositions for forming bottom antireflective coatings, and methods for fabricating the same
JP5015892B2 (ja) * 2008-10-02 2012-08-29 信越化学工業株式会社 ケイ素含有膜形成用組成物、ケイ素含有膜形成基板及びパターン形成方法
EP2373722A4 (en) 2008-12-10 2013-01-23 Dow Corning SILSESQUIOXAN RESINS
JP5534230B2 (ja) 2008-12-19 2014-06-25 日産化学工業株式会社 アニオン基を有するシリコン含有レジスト下層膜形成組成物
CN102460301B (zh) 2009-06-02 2014-08-06 日产化学工业株式会社 含有带硫醚键的硅的抗蚀剂下层膜形成用组合物
JP5534250B2 (ja) 2009-09-16 2014-06-25 日産化学工業株式会社 スルホンアミド基を有するシリコン含有レジスト下層膜形成組成物
TWI432895B (zh) * 2010-12-01 2014-04-01 Chi Mei Corp 感光性聚矽氧烷組成物及其所形成之基材保護膜
JP5785121B2 (ja) 2011-04-28 2015-09-24 信越化学工業株式会社 パターン形成方法
TWI553409B (zh) 2011-08-31 2016-10-11 旭化成電子材料股份有限公司 Hardened
US9011591B2 (en) 2011-09-21 2015-04-21 Dow Global Technologies Llc Compositions and antireflective coatings for photolithography
TWI432898B (zh) * 2011-12-05 2014-04-01 Chi Mei Corp 彩色濾光片用藍色感光性樹脂組成物及其應用
JPWO2014080908A1 (ja) * 2012-11-26 2017-01-05 東レ株式会社 ネガ型感光性樹脂組成物
US9348228B2 (en) 2013-01-03 2016-05-24 Globalfoundries Inc. Acid-strippable silicon-containing antireflective coating
US9651865B2 (en) 2013-02-14 2017-05-16 Toray Industries, Inc. Negative-type photosensitive coloring composition, cured film, light-shielding pattern for touch panel, and touch panel manufacturing method
JP5830044B2 (ja) 2013-02-15 2015-12-09 信越化学工業株式会社 レジスト下層膜形成用組成物及びパターン形成方法
TWI490653B (zh) * 2013-09-10 2015-07-01 Chi Mei Corp 正型感光性樹脂組成物及其圖案形成方法
WO2016052268A1 (ja) * 2014-09-30 2016-04-07 東レ株式会社 感光性樹脂組成物、硬化膜、硬化膜を具備する素子及び半導体装置の製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101622296A (zh) * 2007-02-27 2010-01-06 Az电子材料美国公司 硅基抗反射涂料组合物
JP2009019093A (ja) * 2007-07-11 2009-01-29 Asahi Kasei Electronics Co Ltd ポリオルガノシロキサン
WO2009111122A3 (en) * 2008-03-04 2009-10-29 Dow Corning Corporation Silsesquioxane resins

Also Published As

Publication number Publication date
US9442377B1 (en) 2016-09-13
KR20160147652A (ko) 2016-12-23
US20160363861A1 (en) 2016-12-15
JP2017020000A (ja) 2017-01-26
TWI600724B (zh) 2017-10-01
KR101849638B1 (ko) 2018-04-17
JP6643411B2 (ja) 2020-02-12
JP2018173657A (ja) 2018-11-08
TW201700658A (zh) 2017-01-01
US10031420B2 (en) 2018-07-24
CN106243357A (zh) 2016-12-21

Similar Documents

Publication Publication Date Title
CN106243357B (zh) 可湿式剥去的含硅抗反射剂
TWI466926B (zh) 基於矽之抗反射塗覆組合物
US8026035B2 (en) Etch-resistant disilane and saturated hydrocarbon bridged silicon-containing polymers, method of making the same, and method of using the same
TWI663176B (zh) 含矽底層
JP2011510133A (ja) シルセスキオキサン樹脂
US10114288B2 (en) Silicon-containing underlayers
JP7269904B2 (ja) ケイ素含有下層
JP7139469B2 (ja) ケイ素含有下層
CN101970540A (zh) 倍半硅氧烷树脂
JP7065160B2 (ja) ケイ素含有下層を使用する方法
CN116500864B (zh) 组合的ARC和Si硬掩模的组合物
CN116500863A (zh) 组合的ARC和Si基硬掩模薄膜的组合物

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20190723

Termination date: 20200602

CF01 Termination of patent right due to non-payment of annual fee