CN106219480A - 一种非制冷红外3d mems系统结构及其制作方法 - Google Patents
一种非制冷红外3d mems系统结构及其制作方法 Download PDFInfo
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- CN106219480A CN106219480A CN201610532815.3A CN201610532815A CN106219480A CN 106219480 A CN106219480 A CN 106219480A CN 201610532815 A CN201610532815 A CN 201610532815A CN 106219480 A CN106219480 A CN 106219480A
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- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 32
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- 238000001459 lithography Methods 0.000 claims description 18
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 15
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 13
- 239000012528 membrane Substances 0.000 claims description 13
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0006—Interconnects
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0009—Structural features, others than packages, for protecting a device against environmental influences
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
- B81C1/00095—Interconnects
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00444—Surface micromachining, i.e. structuring layers on the substrate
- B81C1/00468—Releasing structures
- B81C1/00476—Releasing structures removing a sacrificial layer
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Health & Medical Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
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CN201610532815.3A CN106219480B (zh) | 2016-07-07 | 2016-07-07 | 一种非制冷红外3d mems系统结构及其制作方法 |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106449852A (zh) * | 2016-07-28 | 2017-02-22 | 上海集成电路研发中心有限公司 | 悬挂式红外探测器像元结构及其制备方法 |
CN107117579A (zh) * | 2017-05-11 | 2017-09-01 | 烟台睿创微纳技术股份有限公司 | 一种双层偏振非制冷红外探测器结构及其制备方法 |
CN107128872A (zh) * | 2017-05-11 | 2017-09-05 | 烟台睿创微纳技术股份有限公司 | 一种新型偏振非制冷红外焦平面探测器及其制备方法 |
CN113104806A (zh) * | 2021-03-11 | 2021-07-13 | 中国电子科技集团公司第五十四研究所 | 一种mems器件复合金属牺牲层的制备方法 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5021663A (en) * | 1988-08-12 | 1991-06-04 | Texas Instruments Incorporated | Infrared detector |
US20110049366A1 (en) * | 2009-09-02 | 2011-03-03 | Electronics And Telecommunications Research Institute | Resistive material for bolometer, bolometer for infrared detector using the material, and method of manufacturing the bolometer |
CN102384789A (zh) * | 2010-08-30 | 2012-03-21 | 中国科学院微电子研究所 | 红外焦平面阵列器件及其制作方法 |
CN102583220A (zh) * | 2012-03-29 | 2012-07-18 | 江苏物联网研究发展中心 | 一种晶圆级真空封装的红外探测器及其制作方法 |
CN102683475A (zh) * | 2011-03-18 | 2012-09-19 | 浙江大立科技股份有限公司 | 一种基于临时释放保护层的红外探测器制作方法 |
CN103715307A (zh) * | 2013-12-31 | 2014-04-09 | 烟台睿创微纳技术有限公司 | 一种非制冷红外探测器及其制备方法 |
CN103759838A (zh) * | 2014-01-13 | 2014-04-30 | 浙江大立科技股份有限公司 | 微桥结构红外探测器及其制造方法 |
-
2016
- 2016-07-07 CN CN201610532815.3A patent/CN106219480B/zh active Active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5021663A (en) * | 1988-08-12 | 1991-06-04 | Texas Instruments Incorporated | Infrared detector |
US5021663B1 (en) * | 1988-08-12 | 1997-07-01 | Texas Instruments Inc | Infrared detector |
US20110049366A1 (en) * | 2009-09-02 | 2011-03-03 | Electronics And Telecommunications Research Institute | Resistive material for bolometer, bolometer for infrared detector using the material, and method of manufacturing the bolometer |
CN102384789A (zh) * | 2010-08-30 | 2012-03-21 | 中国科学院微电子研究所 | 红外焦平面阵列器件及其制作方法 |
CN102683475A (zh) * | 2011-03-18 | 2012-09-19 | 浙江大立科技股份有限公司 | 一种基于临时释放保护层的红外探测器制作方法 |
CN102583220A (zh) * | 2012-03-29 | 2012-07-18 | 江苏物联网研究发展中心 | 一种晶圆级真空封装的红外探测器及其制作方法 |
CN103715307A (zh) * | 2013-12-31 | 2014-04-09 | 烟台睿创微纳技术有限公司 | 一种非制冷红外探测器及其制备方法 |
CN103759838A (zh) * | 2014-01-13 | 2014-04-30 | 浙江大立科技股份有限公司 | 微桥结构红外探测器及其制造方法 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106449852A (zh) * | 2016-07-28 | 2017-02-22 | 上海集成电路研发中心有限公司 | 悬挂式红外探测器像元结构及其制备方法 |
CN106449852B (zh) * | 2016-07-28 | 2019-02-05 | 上海集成电路研发中心有限公司 | 悬挂式红外探测器像元结构及其制备方法 |
CN107117579A (zh) * | 2017-05-11 | 2017-09-01 | 烟台睿创微纳技术股份有限公司 | 一种双层偏振非制冷红外探测器结构及其制备方法 |
CN107128872A (zh) * | 2017-05-11 | 2017-09-05 | 烟台睿创微纳技术股份有限公司 | 一种新型偏振非制冷红外焦平面探测器及其制备方法 |
CN113104806A (zh) * | 2021-03-11 | 2021-07-13 | 中国电子科技集团公司第五十四研究所 | 一种mems器件复合金属牺牲层的制备方法 |
CN113104806B (zh) * | 2021-03-11 | 2024-05-03 | 中国电子科技集团公司第五十四研究所 | 一种mems器件复合金属牺牲层的制备方法 |
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Denomination of invention: An uncooled infrared 3D MEMS system structure and its manufacturing method Effective date of registration: 20211228 Granted publication date: 20180413 Pledgee: Yantai Branch of China Merchants Bank Co.,Ltd. Pledgor: YANTAI RAYTRON TECHNOLOGY Co.,Ltd. Registration number: Y2021980016546 |
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Denomination of invention: An Uncooled Infrared 3D MEMS System Structure and Its Fabrication Method Effective date of registration: 20230113 Granted publication date: 20180413 Pledgee: Yantai Branch of China Merchants Bank Co.,Ltd. Pledgor: YANTAI RAYTRON TECHNOLOGY Co.,Ltd. Registration number: Y2023980031039 |
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