CN107117579A - 一种双层偏振非制冷红外探测器结构及其制备方法 - Google Patents
一种双层偏振非制冷红外探测器结构及其制备方法 Download PDFInfo
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- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
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- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
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Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109253803A (zh) * | 2018-08-29 | 2019-01-22 | 北方广微科技有限公司 | 非制冷红外偏振探测器像元结构及制备方法 |
CN109309140A (zh) * | 2018-08-29 | 2019-02-05 | 北方广微科技有限公司 | 偏振非制冷红外焦平面探测器 |
CN110207818A (zh) * | 2019-05-28 | 2019-09-06 | 上海集成电路研发中心有限公司 | 一种偏振红外线探测器结构 |
CN111121978A (zh) * | 2019-11-18 | 2020-05-08 | 中国空间技术研究院 | 宽波段非制冷红外偏振敏感像元结构、阵列及制备方法 |
CN111896120A (zh) * | 2020-08-11 | 2020-11-06 | 烟台睿创微纳技术股份有限公司 | 一种双色偏振非制冷红外探测器及其制作方法 |
CN111896122A (zh) * | 2020-08-11 | 2020-11-06 | 烟台睿创微纳技术股份有限公司 | 一种偏振非制冷红外探测器及其制备方法 |
CN113720467A (zh) * | 2021-03-26 | 2021-11-30 | 北京北方高业科技有限公司 | 基于cmos工艺的红外探测器镜像像元和红外探测器 |
CN114112055A (zh) * | 2021-03-26 | 2022-03-01 | 北京北方高业科技有限公司 | 一种基于cmos工艺的红外探测器及其制备方法 |
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US7329871B2 (en) * | 2005-02-04 | 2008-02-12 | Stc.Unm | Plasmonic enhanced infrared detector element |
CN102175329A (zh) * | 2010-12-01 | 2011-09-07 | 烟台睿创微纳技术有限公司 | 红外探测器及其制作方法及多波段非制冷红外焦平面 |
US20110266443A1 (en) * | 2010-04-28 | 2011-11-03 | Schimert Thomas R | Pixel-level optical elements for uncooled infrared detector devices |
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CN104535197A (zh) * | 2014-12-29 | 2015-04-22 | 杭州士兰集成电路有限公司 | 热电堆红外探测器及其制作方法 |
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CN106219480A (zh) * | 2016-07-07 | 2016-12-14 | 烟台睿创微纳技术股份有限公司 | 一种非制冷红外3d mems系统结构及其制作方法 |
CN106352989A (zh) * | 2016-08-18 | 2017-01-25 | 烟台睿创微纳技术股份有限公司 | 一种非制冷红外焦平面探测器微桥的制作方法和结构 |
CN106517077A (zh) * | 2016-10-28 | 2017-03-22 | 中国科学院微电子研究所 | 一种红外探测器及其制作方法 |
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US7329871B2 (en) * | 2005-02-04 | 2008-02-12 | Stc.Unm | Plasmonic enhanced infrared detector element |
US20110266443A1 (en) * | 2010-04-28 | 2011-11-03 | Schimert Thomas R | Pixel-level optical elements for uncooled infrared detector devices |
CN102175329A (zh) * | 2010-12-01 | 2011-09-07 | 烟台睿创微纳技术有限公司 | 红外探测器及其制作方法及多波段非制冷红外焦平面 |
CN103335728A (zh) * | 2013-06-24 | 2013-10-02 | 中国科学院长春光学精密机械与物理研究所 | 基于等离子体透镜阵列的非制冷红外焦平面探测器 |
CN104535197A (zh) * | 2014-12-29 | 2015-04-22 | 杭州士兰集成电路有限公司 | 热电堆红外探测器及其制作方法 |
CN105811061A (zh) * | 2016-05-13 | 2016-07-27 | 电子科技大学 | 一种桥腿分离天线耦合微桥结构及其制备方法 |
CN106219480A (zh) * | 2016-07-07 | 2016-12-14 | 烟台睿创微纳技术股份有限公司 | 一种非制冷红外3d mems系统结构及其制作方法 |
CN106352989A (zh) * | 2016-08-18 | 2017-01-25 | 烟台睿创微纳技术股份有限公司 | 一种非制冷红外焦平面探测器微桥的制作方法和结构 |
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Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109253803A (zh) * | 2018-08-29 | 2019-01-22 | 北方广微科技有限公司 | 非制冷红外偏振探测器像元结构及制备方法 |
CN109309140A (zh) * | 2018-08-29 | 2019-02-05 | 北方广微科技有限公司 | 偏振非制冷红外焦平面探测器 |
CN110207818A (zh) * | 2019-05-28 | 2019-09-06 | 上海集成电路研发中心有限公司 | 一种偏振红外线探测器结构 |
CN110207818B (zh) * | 2019-05-28 | 2021-07-20 | 上海集成电路研发中心有限公司 | 一种偏振红外线探测器结构 |
CN111121978A (zh) * | 2019-11-18 | 2020-05-08 | 中国空间技术研究院 | 宽波段非制冷红外偏振敏感像元结构、阵列及制备方法 |
CN111896120A (zh) * | 2020-08-11 | 2020-11-06 | 烟台睿创微纳技术股份有限公司 | 一种双色偏振非制冷红外探测器及其制作方法 |
CN111896122A (zh) * | 2020-08-11 | 2020-11-06 | 烟台睿创微纳技术股份有限公司 | 一种偏振非制冷红外探测器及其制备方法 |
CN111896122B (zh) * | 2020-08-11 | 2021-11-16 | 烟台睿创微纳技术股份有限公司 | 一种偏振非制冷红外探测器及其制备方法 |
CN111896120B (zh) * | 2020-08-11 | 2022-03-22 | 烟台睿创微纳技术股份有限公司 | 一种双色偏振非制冷红外探测器及其制作方法 |
CN113720467A (zh) * | 2021-03-26 | 2021-11-30 | 北京北方高业科技有限公司 | 基于cmos工艺的红外探测器镜像像元和红外探测器 |
CN114112055A (zh) * | 2021-03-26 | 2022-03-01 | 北京北方高业科技有限公司 | 一种基于cmos工艺的红外探测器及其制备方法 |
CN114112055B (zh) * | 2021-03-26 | 2023-07-07 | 北京北方高业科技有限公司 | 一种基于cmos工艺的红外探测器及其制备方法 |
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Denomination of invention: Double layer polarization uncooled infrared detector structure and preparation method thereof Effective date of registration: 20211228 Granted publication date: 20210716 Pledgee: Yantai Branch of China Merchants Bank Co.,Ltd. Pledgor: YANTAI RAYTRON TECHNOLOGY Co.,Ltd. Registration number: Y2021980016546 |
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Date of cancellation: 20230106 Granted publication date: 20210716 Pledgee: Yantai Branch of China Merchants Bank Co.,Ltd. Pledgor: YANTAI RAYTRON TECHNOLOGY Co.,Ltd. Registration number: Y2021980016546 |
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Denomination of invention: Structure and preparation method of a double-layer polarized uncooled infrared detector Effective date of registration: 20230113 Granted publication date: 20210716 Pledgee: Yantai Branch of China Merchants Bank Co.,Ltd. Pledgor: YANTAI RAYTRON TECHNOLOGY Co.,Ltd. Registration number: Y2023980031039 |
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Granted publication date: 20210716 Pledgee: Yantai Branch of China Merchants Bank Co.,Ltd. Pledgor: YANTAI RAYTRON TECHNOLOGY Co.,Ltd. Registration number: Y2023980031039 |
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