CN106784165A - 一种新型双层非制冷红外焦平面探测器像素结构及其制备方法 - Google Patents
一种新型双层非制冷红外焦平面探测器像素结构及其制备方法 Download PDFInfo
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- 239000000523 sample Substances 0.000 title claims abstract description 23
- 238000002360 preparation method Methods 0.000 title claims abstract description 17
- 239000010410 layer Substances 0.000 claims abstract description 269
- 229910052751 metal Inorganic materials 0.000 claims abstract description 73
- 239000002184 metal Substances 0.000 claims abstract description 73
- 239000011241 protective layer Substances 0.000 claims abstract description 59
- 238000005530 etching Methods 0.000 claims abstract description 21
- 230000000994 depressogenic effect Effects 0.000 claims abstract description 20
- 239000004065 semiconductor Substances 0.000 claims abstract description 20
- 238000000151 deposition Methods 0.000 claims abstract description 19
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims abstract description 19
- 238000001259 photo etching Methods 0.000 claims abstract description 16
- 239000010408 film Substances 0.000 claims description 30
- 238000000034 method Methods 0.000 claims description 29
- 229910001935 vanadium oxide Inorganic materials 0.000 claims description 16
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical group [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 claims description 15
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 14
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 14
- 239000010409 thin film Substances 0.000 claims description 14
- 238000005229 chemical vapour deposition Methods 0.000 claims description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 7
- 230000008021 deposition Effects 0.000 claims description 7
- 150000004767 nitrides Chemical class 0.000 claims description 7
- 238000005240 physical vapour deposition Methods 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 7
- 238000010276 construction Methods 0.000 claims description 6
- 230000008859 change Effects 0.000 claims description 5
- 238000012544 monitoring process Methods 0.000 claims description 5
- 229910004205 SiNX Inorganic materials 0.000 claims description 4
- 230000005611 electricity Effects 0.000 claims description 4
- 238000000227 grinding Methods 0.000 claims description 4
- 239000004642 Polyimide Substances 0.000 claims description 3
- 229910003481 amorphous carbon Inorganic materials 0.000 claims description 3
- 238000005566 electron beam evaporation Methods 0.000 claims description 3
- 230000008020 evaporation Effects 0.000 claims description 3
- 238000001704 evaporation Methods 0.000 claims description 3
- 238000010884 ion-beam technique Methods 0.000 claims description 3
- 229920001721 polyimide Polymers 0.000 claims description 3
- 238000002310 reflectometry Methods 0.000 claims description 3
- 230000007704 transition Effects 0.000 claims description 3
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 2
- 238000000059 patterning Methods 0.000 abstract 1
- 238000000206 photolithography Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 9
- 239000000463 material Substances 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 6
- 230000009286 beneficial effect Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 238000000137 annealing Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910000480 nickel oxide Inorganic materials 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- 230000005616 pyroelectricity Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000005057 refrigeration Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000002887 superconductor Substances 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- 229910021521 yttrium barium copper oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0018—Structures acting upon the moving or flexible element for transforming energy into mechanical movement or vice versa, i.e. actuators, sensors, generators
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
- B81C1/00142—Bridges
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
- G01J5/22—Electrical features thereof
- G01J5/24—Use of specially adapted circuits, e.g. bridge circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Condensed Matter Physics & Semiconductors (AREA)
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CN201710062648.5A CN106784165B (zh) | 2017-01-24 | 2017-01-24 | 一种新型双层非制冷红外焦平面探测器像素结构及其制备方法 |
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Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111024244A (zh) * | 2019-11-28 | 2020-04-17 | 浙江大立科技股份有限公司 | 具有微桥结构的半导体结构及其形成方法、微结构传感器 |
CN112071956A (zh) * | 2020-09-08 | 2020-12-11 | 山西国惠光电科技有限公司 | 一种新型InGaAs红外焦平面探测器的制备工艺 |
WO2021117818A1 (ja) * | 2019-12-11 | 2021-06-17 | 株式会社カネカ | 光電変換素子のエッチング方法、および光電変換素子のエッチング装置 |
CN113049115A (zh) * | 2021-01-29 | 2021-06-29 | 武汉高芯科技有限公司 | 像素级封装的非制冷红外探测器及其制作方法 |
CN113532661A (zh) * | 2021-07-12 | 2021-10-22 | 北京北方高业科技有限公司 | 一种单层红外焦平面探测器 |
CN113720482A (zh) * | 2021-03-26 | 2021-11-30 | 北京北方高业科技有限公司 | 基于cmos工艺的红外探测器像元和红外探测器 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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US20050201983A1 (en) * | 2002-03-12 | 2005-09-15 | Seppo Yla-Herttuala | Engineered baculoviruses and their use |
CN101445215A (zh) * | 2008-10-16 | 2009-06-03 | 上海集成电路研发中心有限公司 | 红外探测器及其制造方法 |
CN102169919A (zh) * | 2011-03-17 | 2011-08-31 | 上海集成电路研发中心有限公司 | 探测器及其制造方法 |
CN102353459A (zh) * | 2011-07-05 | 2012-02-15 | 上海集成电路研发中心有限公司 | 探测器及其制造方法 |
-
2017
- 2017-01-24 CN CN201710062648.5A patent/CN106784165B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050201983A1 (en) * | 2002-03-12 | 2005-09-15 | Seppo Yla-Herttuala | Engineered baculoviruses and their use |
CN101445215A (zh) * | 2008-10-16 | 2009-06-03 | 上海集成电路研发中心有限公司 | 红外探测器及其制造方法 |
CN102169919A (zh) * | 2011-03-17 | 2011-08-31 | 上海集成电路研发中心有限公司 | 探测器及其制造方法 |
CN102353459A (zh) * | 2011-07-05 | 2012-02-15 | 上海集成电路研发中心有限公司 | 探测器及其制造方法 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111024244A (zh) * | 2019-11-28 | 2020-04-17 | 浙江大立科技股份有限公司 | 具有微桥结构的半导体结构及其形成方法、微结构传感器 |
WO2021117818A1 (ja) * | 2019-12-11 | 2021-06-17 | 株式会社カネカ | 光電変換素子のエッチング方法、および光電変換素子のエッチング装置 |
CN112071956A (zh) * | 2020-09-08 | 2020-12-11 | 山西国惠光电科技有限公司 | 一种新型InGaAs红外焦平面探测器的制备工艺 |
CN113049115A (zh) * | 2021-01-29 | 2021-06-29 | 武汉高芯科技有限公司 | 像素级封装的非制冷红外探测器及其制作方法 |
CN113720482A (zh) * | 2021-03-26 | 2021-11-30 | 北京北方高业科技有限公司 | 基于cmos工艺的红外探测器像元和红外探测器 |
CN113532661A (zh) * | 2021-07-12 | 2021-10-22 | 北京北方高业科技有限公司 | 一种单层红外焦平面探测器 |
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