CN106209006A - A kind of production technology of quartz-crystal resonator - Google Patents
A kind of production technology of quartz-crystal resonator Download PDFInfo
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- CN106209006A CN106209006A CN201610618187.0A CN201610618187A CN106209006A CN 106209006 A CN106209006 A CN 106209006A CN 201610618187 A CN201610618187 A CN 201610618187A CN 106209006 A CN106209006 A CN 106209006A
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- crystal resonator
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- 239000013078 crystal Substances 0.000 title claims abstract description 27
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 23
- 238000005516 engineering process Methods 0.000 title claims abstract description 21
- 230000007797 corrosion Effects 0.000 claims abstract description 15
- 238000005260 corrosion Methods 0.000 claims abstract description 15
- 239000010453 quartz Substances 0.000 claims abstract description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 15
- 238000005538 encapsulation Methods 0.000 claims abstract description 13
- 239000003292 glue Substances 0.000 claims abstract description 13
- 238000005498 polishing Methods 0.000 claims abstract description 13
- 238000001771 vacuum deposition Methods 0.000 claims abstract description 8
- 238000004140 cleaning Methods 0.000 claims abstract description 5
- 229910052751 metal Inorganic materials 0.000 claims description 24
- 239000002184 metal Substances 0.000 claims description 24
- 238000000227 grinding Methods 0.000 claims description 20
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 12
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 10
- 239000007788 liquid Substances 0.000 claims description 10
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 claims description 7
- 239000002253 acid Substances 0.000 claims description 7
- 239000012153 distilled water Substances 0.000 claims description 7
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 5
- 239000004411 aluminium Substances 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- KRVSOGSZCMJSLX-UHFFFAOYSA-L chromic acid Substances O[Cr](O)(=O)=O KRVSOGSZCMJSLX-UHFFFAOYSA-L 0.000 claims description 5
- 238000005520 cutting process Methods 0.000 claims description 5
- 229960000935 dehydrated alcohol Drugs 0.000 claims description 5
- 239000008367 deionised water Substances 0.000 claims description 5
- 229910021641 deionized water Inorganic materials 0.000 claims description 5
- 238000001035 drying Methods 0.000 claims description 5
- AWJWCTOOIBYHON-UHFFFAOYSA-N furo[3,4-b]pyrazine-5,7-dione Chemical compound C1=CN=C2C(=O)OC(=O)C2=N1 AWJWCTOOIBYHON-UHFFFAOYSA-N 0.000 claims description 5
- 238000003475 lamination Methods 0.000 claims description 5
- 238000007747 plating Methods 0.000 claims description 5
- 238000002604 ultrasonography Methods 0.000 claims description 5
- 238000003466 welding Methods 0.000 claims description 5
- 238000001514 detection method Methods 0.000 claims description 3
- 239000010408 film Substances 0.000 claims 1
- 239000010409 thin film Substances 0.000 claims 1
- 238000012797 qualification Methods 0.000 abstract description 5
- 230000032683 aging Effects 0.000 abstract description 4
- 239000003518 caustics Substances 0.000 abstract description 3
- 230000006378 damage Effects 0.000 abstract description 3
- 238000005530 etching Methods 0.000 description 3
- 238000004064 recycling Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 210000003739 neck Anatomy 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
The invention discloses the production technology of a kind of quartz-crystal resonator, relate to Electronic Components Manufacturing technical field, comprise the following steps: that (1) quartz wafer grinds successively；(2) polishing；(3) corrosion is cleaned；(4) vacuum coating；(5) glue is shelved；(6) frequency modulation；(7) encapsulation lettering, the present invention is simple and convenient, and utilizes cleaning caustic solution disclosed by the invention, English wafer is corroded, effectively removes destruction layer, improve wafer surface conditions, it is substantially reduced resonator resistance and ageing rate, improves the qualification rate that crystal resonator produces.
Description
Technical field
The invention belongs to electronic applications, it is more particularly related to the production technology of a kind of quartz-crystal resonator.
Background technology
In recent years, the application in complete electronic set of the quartz crystal components and parts widely, from common toy for children, electronics
Clock and watch all be unable to do without it to colour TV, sound equipment, VCD, microprocessor, wireless telecommunications, TV signal relay etc..Along with electronic information is produced
The extensive application of developing rapidly of industry, especially digitizer, the market demand of quartz crystal components and parts quickly increases, with
Time to its performance, stability, precision it is also proposed that higher requirement.Therefore, development and production high-performance, high stable, high-precision stone
English crystal resonator has very important significance and to produce quartz-crystal resonator of good performance, reasonably sets except having
Outside meter and excellent raw material, production technology will play a decisive role.
Summary of the invention
Problem to be solved by this invention is to provide the production technology of a kind of quartz-crystal resonator.
To achieve these goals, the technical scheme that the present invention takes is:
The production technology of a kind of quartz-crystal resonator, comprises the steps:
(1) quartz wafer grinds
Being ground wafer, described grinding is divided into corase grind, middle mill and fine grinding, corase grind mainly wafer to be carried out angle and thickness
Cutting, middle mill and fine grinding are wafer to carry out fine thickness adjust；
(2) polishing
Utilize buffing machine that the wafer after grinding is polished
(3) corrosion is cleaned
Wafer after polishing is put in corrosive liquid, at 40-60 DEG C, cleans corrosion 5-9min；
(4) vacuum coating
Putting on coater by the most cleaned wafer, reaching in vacuum is 6.7 × 10-3On wafer, plate metal during Pa lead
Conductive film；
(5) glue is shelved
The piezoid having plated electrode is slowly put between the two metal sheets of ribbon stent, allow the two metal sheets of slotted hole tightly press from both sides
Live piezoid, be then coated with last layer conducting resinl in electrode and sheet metal contact position, make conducting resinl that electrode film passes through on edge with
Sheet metal contacts and produces electrical connection, after some glue, toasts about 4 hours in placing a wafer into baking oven at 220 DEG C,；
(6) frequency modulation
Frequency modulation machine is utilized will to plate the aluminium lamination plating 1-3mm on the wafer of electrode again；
(7) encapsulation lettering
Utilizing resistive seal welding machine to be packaged wafer, roasting word at 150 DEG C, the roasting word time is 5-7h.
Preferably, described step (2) is front first by hydrofluoric acid dips 2-4min of wafer concentration 30-40%.
Preferably, described step (3) is clean by wafer cleaning before corrosion, uses chromic acid to be carried out 2-4 time, then
Put into deionized water and ultrasound wave carries out super washing, finally use dehydrated alcohol to carry out being dehydrated and in 100-120 DEG C of drying.
Preferably, described step (3) corrosive liquid is formulated by distilled water, ammonium fluoride and Fluohydric acid..
Preferably, in described step (3), the weight ratio of distilled water, ammonium fluoride and Fluohydric acid. is 5:1:1.
Preferably, described step (7) is hunted leak first with leak detector, after confirming to reach leak detection index, then is packaged
Lettering.
Preferably, quartz resonator various performance parameters is measured after described step (7) encapsulation lettering.
Beneficial effect: the invention provides the production technology of a kind of quartz-crystal resonator, relate to Electronic Components Manufacturing
Technical field, comprises the following steps: that (1) quartz wafer grinds successively；(2) polishing；(3) corrosion is cleaned；(4) vacuum coating；(5)
Shelve a glue；(6) frequency modulation；(7) encapsulation lettering, the present invention is simple and convenient, and utilizes cleaning caustic solution disclosed by the invention,
English wafer is corroded, effectively removes destruction layer, improve wafer surface conditions, be substantially reduced resonator resistance with old
Rate, improves the qualification rate that crystal resonator produces.
Detailed description of the invention
Embodiment 1:
The production technology of a kind of quartz-crystal resonator, comprises the steps:
(1) quartz wafer grinds
Being ground wafer, described grinding is divided into corase grind, middle mill and fine grinding, corase grind mainly wafer to be carried out angle and thickness
Cutting, middle mill and fine grinding are wafer to carry out fine thickness adjust；
(2) polishing
First by wafer hydrofluoric acid dips 2min of concentration 30%, the wafer after grinding is polished by recycling buffing machine
(3) corrosion is cleaned
Chromic acid to be used before etching after polishing is carried out 2 times, then puts in ultrasound wave with deionized water and carry out
Surpass and wash, finally use dehydrated alcohol to carry out being dehydrated and in 100 DEG C of drying, putting in corrosive liquid, at 40 DEG C, clean corrosion
5min, described corrosive liquid is prepared by distilled water, ammonium fluoride and Fluohydric acid. and is formed by weight for 5:1:1 configuration；
(4) vacuum coating
Putting on coater by the most cleaned wafer, reaching in vacuum is 6.7 × 10-3On wafer, plate metal during Pa lead
Conductive film；
(5) glue is shelved
The piezoid having plated electrode is slowly put between the two metal sheets of ribbon stent, allow the two metal sheets of slotted hole tightly press from both sides
Live piezoid, be then coated with last layer conducting resinl in electrode and sheet metal contact position, make conducting resinl that electrode film passes through on edge with
Sheet metal contacts and produces electrical connection, after some glue, toasts 4h in placing a wafer into baking oven at 220 DEG C；
(6) frequency modulation
Frequency modulation machine is utilized will to plate the aluminium lamination plating 1mm on the wafer of electrode again；
(7) encapsulation lettering
Hunt leak first with leak detector, confirm to reach to hunt leak after index, utilize resistive seal welding machine that wafer is packaged, with
Roasting word at 150 DEG C, the roasting word time is 5h, measures quartz resonator various performance parameters after encapsulation lettering.
Embodiment 2:
The production technology of a kind of quartz-crystal resonator, comprises the steps:
(1) quartz wafer grinds
Being ground wafer, described grinding is divided into corase grind, middle mill and fine grinding, corase grind mainly wafer to be carried out angle and thickness
Cutting, middle mill and fine grinding are wafer to carry out fine thickness adjust；
(2) polishing
First by wafer hydrofluoric acid dips 3min of concentration 35%, the wafer after grinding is polished by recycling buffing machine
(3) corrosion is cleaned
Chromic acid to be used before etching after polishing is carried out 3 times, then puts in ultrasound wave with deionized water and carry out
Surpass and wash, finally use dehydrated alcohol to carry out being dehydrated and in 110 DEG C of drying, putting in corrosive liquid, at 50 DEG C, clean corrosion
7min, described corrosive liquid is prepared by distilled water, ammonium fluoride and Fluohydric acid. and is formed by weight for 5:1:1 configuration；
(4) vacuum coating
Putting on coater by the most cleaned wafer, reaching in vacuum is 6.7 × 10-3On wafer, plate metal during Pa lead
Conductive film；
(5) glue is shelved
The piezoid having plated electrode is slowly put between the two metal sheets of ribbon stent, allow the two metal sheets of slotted hole tightly press from both sides
Live piezoid, be then coated with last layer conducting resinl in electrode and sheet metal contact position, make conducting resinl that electrode film passes through on edge with
Sheet metal contacts and produces electrical connection, after some glue, toasts 4.5h in placing a wafer into baking oven at 230 DEG C；
(6) frequency modulation
Frequency modulation machine is utilized will to plate the aluminium lamination plating 2mm on the wafer of electrode again；
(7) encapsulation lettering
Hunt leak first with leak detector, confirm to reach to hunt leak after index, utilize resistive seal welding machine that wafer is packaged, with
Roasting word at 150 DEG C, the roasting word time is 6h, measures quartz resonator various performance parameters after encapsulation lettering.
Embodiment 3:
The production technology of a kind of quartz-crystal resonator, comprises the steps:
(1) quartz wafer grinds
Being ground wafer, described grinding is divided into corase grind, middle mill and fine grinding, corase grind mainly wafer to be carried out angle and thickness
Cutting, middle mill and fine grinding are wafer to carry out fine thickness adjust；
(2) polishing
First by wafer hydrofluoric acid dips 4min of concentration 40%, the wafer after grinding is polished by recycling buffing machine
(3) corrosion is cleaned
Chromic acid to be used before etching after polishing is carried out 4 times, then puts in ultrasound wave with deionized water and carry out
Surpass and wash, finally use dehydrated alcohol to carry out being dehydrated and in 120 DEG C of drying, putting in corrosive liquid, at 60 DEG C, clean corrosion
9min, described corrosive liquid is prepared by distilled water, ammonium fluoride and Fluohydric acid. and is formed by weight for 5:1:1 configuration；
(4) vacuum coating
Putting on coater by the most cleaned wafer, reaching in vacuum is 6.7 × 10-3On wafer, plate metal during Pa lead
Conductive film；
(5) glue is shelved
The piezoid having plated electrode is slowly put between the two metal sheets of ribbon stent, allow the two metal sheets of slotted hole tightly press from both sides
Live piezoid, be then coated with last layer conducting resinl in electrode and sheet metal contact position, make conducting resinl that electrode film passes through on edge with
Sheet metal contacts and produces electrical connection, after some glue, toasts 5h in placing a wafer into baking oven at 240 DEG C；
(6) frequency modulation
Frequency modulation machine is utilized will to plate the aluminium lamination plating 3mm on the wafer of electrode again；
(7) encapsulation lettering
Hunt leak first with leak detector, confirm to reach to hunt leak after index, utilize resistive seal welding machine that wafer is packaged, with
Roasting word at 150 DEG C, the roasting word time is 7h, measures quartz resonator various performance parameters after encapsulation lettering.
After process above, taking out sample respectively, measurement result is as follows:
| Detection project | Embodiment 1 | Embodiment 2 | Embodiment 3 | Prior art index |
| Qualification rate (%) | 93 | 95 | 94 | 90 |
| Resistivity (Ω) | 14 | 12 | 15 | 20 |
| Ageing rate % | 3 | 2 | 3 | 5 |
Can draw according to above table data, the quartz-crystal resonator produced than prior art when embodiment 2 parameter
Resistance and ageing rate low, and improve crystal resonator produce qualification rate.
The invention provides the production technology of a kind of quartz-crystal resonator, relate to Electronic Components Manufacturing technical field,
Comprise the following steps: that (1) quartz wafer grinds successively；(2) polishing；(3) corrosion is cleaned；(4) vacuum coating；(5) glue is shelved；
(6) frequency modulation；(7) encapsulation lettering, the present invention is simple and convenient, and utilizes cleaning caustic solution disclosed by the invention, to English wafer
Corrode, effectively remove destruction layer, improve wafer surface conditions, be substantially reduced resonator resistance and ageing rate, carry
The qualification rate that high crystal resonator produces.
The foregoing is only embodiments of the invention, not thereby limit the scope of the claims of the present invention, every utilize this
Equivalent structure or equivalence flow process that bright description is made convert, or are directly or indirectly used in other relevant technology necks
Territory, is the most in like manner included in the scope of patent protection of the present invention.
Claims (7)
1. the production technology of a quartz-crystal resonator, it is characterised in that: comprise the steps:
(1) quartz wafer grinds
Being ground wafer, described grinding is divided into corase grind, middle mill and fine grinding, corase grind mainly wafer to be carried out angle and thickness
Cutting, middle mill and fine grinding are wafer to carry out fine thickness adjust；
(2) polishing
Utilize buffing machine that the wafer after grinding is polished；
(3) corrosion is cleaned
Wafer after polishing is put in corrosive liquid, at 40-60 DEG C, cleans corrosion 5-9min；
(4) vacuum coating
Putting on coater by the most cleaned wafer, reaching in vacuum is 6.7 × 10-3On wafer, metallic conduction is plated during Pa
Thin film；
(5) glue is shelved
The piezoid having plated electrode is slowly put between the two metal sheets of ribbon stent, allow the two metal sheets of slotted hole tightly press from both sides
Live piezoid, be then coated with last layer conducting resinl in electrode and sheet metal contact position, make conducting resinl that electrode film passes through on edge with
Sheet metal contacts and produces electrical connection, after some glue, toasts about 4 hours in placing a wafer into baking oven at 220 DEG C,；
(6) frequency modulation
Frequency modulation machine is utilized will to plate the aluminium lamination plating 1-3mm on the wafer of electrode again；
(7) encapsulation lettering
Utilizing resistive seal welding machine to be packaged wafer, roasting word at 150 DEG C, the roasting word time is 5-7h.
2. according to the production technology of a kind of quartz-crystal resonator described in claim 1, it is characterised in that: described step (2)
Front first by hydrofluoric acid dips 2-4min of wafer concentration 30-40%.
3. according to the production technology of a kind of quartz-crystal resonator described in claim 2, it is characterised in that: described step (3)
By wafer cleaning totally to use chromic acid to be carried out 2-4 time, then to put in ultrasound wave with deionized water and carry out before corrosion
Surpass and wash, finally use dehydrated alcohol to carry out being dehydrated and in 100-120 DEG C of drying.
4. according to the production technology of a kind of quartz-crystal resonator described in claim 1, it is characterised in that: described step (3)
Corrosive liquid is formulated by distilled water, ammonium fluoride and Fluohydric acid..
5. according to the production technology of a kind of quartz-crystal resonator described in claim 4, it is characterised in that: described step (3)
The weight ratio of middle distilled water, ammonium fluoride and Fluohydric acid. is 5:1:1.
6. according to the production technology of a kind of quartz-crystal resonator described in claim 1, it is characterised in that: described step (7)
Hunt leak first with leak detector, after confirming to reach leak detection index, then be packaged lettering.
7. according to the production technology of a kind of quartz-crystal resonator described in claim 1, it is characterised in that: described step (7)
Quartz resonator various performance parameters is measured after encapsulation lettering.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610618187.0A CN106209006A (en) | 2016-08-01 | 2016-08-01 | A kind of production technology of quartz-crystal resonator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610618187.0A CN106209006A (en) | 2016-08-01 | 2016-08-01 | A kind of production technology of quartz-crystal resonator |
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| Publication Number | Publication Date |
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| CN106209006A true CN106209006A (en) | 2016-12-07 |
Family
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| CN201610618187.0A Withdrawn CN106209006A (en) | 2016-08-01 | 2016-08-01 | A kind of production technology of quartz-crystal resonator |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106826408A (en) * | 2017-02-09 | 2017-06-13 | 同济大学 | A kind of lbo crystal polishing method based on crystal oxidant |
| CN106877833A (en) * | 2016-12-29 | 2017-06-20 | 北京晨晶电子有限公司 | A kind of processing method of quartz-crystal resonator |
| CN107453726A (en) * | 2017-08-08 | 2017-12-08 | 随州泰华电子科技有限公司 | A kind of technique for lifting tuning fork crystal oscillation ion(ic) etching speed |
| CN108346737A (en) * | 2018-02-08 | 2018-07-31 | 嘉兴晶控电子有限公司 | Piezoelectric quartz process for preparing substrate |
| CN109639254A (en) * | 2018-11-28 | 2019-04-16 | 江苏海德频率科技有限公司 | A kind of resonator manufacturing process of SMD3225 chip |
| CN110798164A (en) * | 2019-10-25 | 2020-02-14 | 苏师大半导体材料与设备研究院(邳州)有限公司 | Method for manufacturing electronic component |
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| CN103208973A (en) * | 2013-04-23 | 2013-07-17 | 铜陵市海德电子有限公司 | Method for producing column type third overtone crystal resonator |
| CN103684318A (en) * | 2013-12-04 | 2014-03-26 | 铜陵迈维电子科技有限公司 | Method for manufacturing quartz-crystal resonator with silver-gilt surface |
| CN103684315A (en) * | 2013-12-04 | 2014-03-26 | 铜陵迈维电子科技有限公司 | Processing technique of quartz-crystal resonator |
| CN103684313A (en) * | 2013-12-04 | 2014-03-26 | 铜陵迈维电子科技有限公司 | Technology for manufacturing quartz crystal resonator |
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2016
- 2016-08-01 CN CN201610618187.0A patent/CN106209006A/en not_active Withdrawn
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103208973A (en) * | 2013-04-23 | 2013-07-17 | 铜陵市海德电子有限公司 | Method for producing column type third overtone crystal resonator |
| CN103684318A (en) * | 2013-12-04 | 2014-03-26 | 铜陵迈维电子科技有限公司 | Method for manufacturing quartz-crystal resonator with silver-gilt surface |
| CN103684315A (en) * | 2013-12-04 | 2014-03-26 | 铜陵迈维电子科技有限公司 | Processing technique of quartz-crystal resonator |
| CN103684313A (en) * | 2013-12-04 | 2014-03-26 | 铜陵迈维电子科技有限公司 | Technology for manufacturing quartz crystal resonator |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106877833A (en) * | 2016-12-29 | 2017-06-20 | 北京晨晶电子有限公司 | A kind of processing method of quartz-crystal resonator |
| CN106877833B (en) * | 2016-12-29 | 2020-04-14 | 北京晨晶电子有限公司 | Processing method of quartz crystal resonator |
| CN106826408A (en) * | 2017-02-09 | 2017-06-13 | 同济大学 | A kind of lbo crystal polishing method based on crystal oxidant |
| CN107453726A (en) * | 2017-08-08 | 2017-12-08 | 随州泰华电子科技有限公司 | A kind of technique for lifting tuning fork crystal oscillation ion(ic) etching speed |
| CN108346737A (en) * | 2018-02-08 | 2018-07-31 | 嘉兴晶控电子有限公司 | Piezoelectric quartz process for preparing substrate |
| CN109639254A (en) * | 2018-11-28 | 2019-04-16 | 江苏海德频率科技有限公司 | A kind of resonator manufacturing process of SMD3225 chip |
| CN109639254B (en) * | 2018-11-28 | 2023-05-09 | 江苏浩都频率科技有限公司 | Manufacturing process of resonator of SMD3225 wafer |
| CN110798164A (en) * | 2019-10-25 | 2020-02-14 | 苏师大半导体材料与设备研究院(邳州)有限公司 | Method for manufacturing electronic component |
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Application publication date: 20161207 |