CN109639254B - Manufacturing process of resonator of SMD3225 wafer - Google Patents
Manufacturing process of resonator of SMD3225 wafer Download PDFInfo
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- CN109639254B CN109639254B CN201811434847.5A CN201811434847A CN109639254B CN 109639254 B CN109639254 B CN 109639254B CN 201811434847 A CN201811434847 A CN 201811434847A CN 109639254 B CN109639254 B CN 109639254B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 33
- 235000012431 wafers Nutrition 0.000 claims description 114
- 238000003466 welding Methods 0.000 claims description 20
- 238000005406 washing Methods 0.000 claims description 14
- 239000011248 coating agent Substances 0.000 claims description 13
- 238000000576 coating method Methods 0.000 claims description 13
- 238000007599 discharging Methods 0.000 claims description 13
- 238000004140 cleaning Methods 0.000 claims description 12
- 238000007789 sealing Methods 0.000 claims description 12
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 10
- 229910052709 silver Inorganic materials 0.000 claims description 10
- 239000004332 silver Substances 0.000 claims description 10
- 229910000679 solder Inorganic materials 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 9
- 239000013078 crystal Substances 0.000 claims description 8
- 238000005520 cutting process Methods 0.000 claims description 8
- NEIHULKJZQTQKJ-UHFFFAOYSA-N [Cu].[Ag] Chemical compound [Cu].[Ag] NEIHULKJZQTQKJ-UHFFFAOYSA-N 0.000 claims description 6
- 239000003292 glue Substances 0.000 claims description 6
- 230000032683 aging Effects 0.000 claims description 4
- 238000003483 aging Methods 0.000 claims description 4
- 238000011001 backwashing Methods 0.000 claims description 4
- 239000000919 ceramic Substances 0.000 claims description 4
- 239000003822 epoxy resin Substances 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 238000004806 packaging method and process Methods 0.000 claims description 4
- 229920000647 polyepoxide Polymers 0.000 claims description 4
- 239000010453 quartz Substances 0.000 claims description 4
- 238000007790 scraping Methods 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 238000005476 soldering Methods 0.000 claims description 4
- 238000002844 melting Methods 0.000 claims description 3
- 230000008018 melting Effects 0.000 claims description 3
- 238000007747 plating Methods 0.000 claims description 3
- 238000000034 method Methods 0.000 claims 7
- 230000006872 improvement Effects 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000012943 hotmelt Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02244—Details of microelectro-mechanical resonators
- H03H9/02433—Means for compensation or elimination of undesired effects
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/19—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator consisting of quartz
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
The invention discloses a manufacturing process of a resonator of an SMD3225 wafer, which comprises the following steps: in the manufacturing process of the resonator of the SMD3225 wafer, the volume and the electrode area of the wafer are increased, the wafer edge-chamfering thickness is reduced, the impedance is reduced, and the size of the cavity in the base is increased at the same time so as to adapt to the size of the wafer; the wafer edge is chamfered and thinned, and meanwhile, the electrode face fillets are designed to adapt to the wafer edge chamfering, so that the stability and reliability of a product are improved.
Description
Technical Field
The invention relates to the technical field of electronic components, in particular to a manufacturing process of a resonator of an SMD3225 wafer.
Background
The current industry level has a mature manufacturing process for resonators of SMD3225 wafers with the thickness of 0.15-0.03 mm (12-54M), but for wafers cut in a fundamental frequency vibration mode, wafers with the thickness of more than 0.15mm have larger impedance of resonator products, are not easy to vibrate in application due to thicker wafers, and have unstable application due to large resistance change under different excitation powers, high power consumption, and for SMD3225/8.000M wafers with the thickness of 0.208mm have short circuit of products and no vibration due to the depth limitation of a base, which is the reason that the technical difficulties of the manufacturing process for resonators with the thickness of more than 0.15mm are difficult to break through at present.
Disclosure of Invention
In order to overcome the defects, the invention provides a manufacturing process of a resonator of an SMD3225 wafer.
The invention realizes the above purpose through the following technical scheme:
a resonator manufacturing process for an SMD3225 wafer, comprising the steps of:
manufacturing a base and an upper cover, cutting a wafer, front washing, arranging the wafer, rear washing, coating film, dispensing, curing, fine tuning, sealing and welding, ageing, reflow soldering, detecting leakage, testing a printing braid, packaging and warehousing;
in the step of manufacturing the base and the upper cover, the base is formed by combining a substrate and a welding ring through silver-copper solder, a cavity between the welding ring and the substrate is an inner cavity, the size of the inner cavity is 2.55 x 1.85 x 0.34mm, and the upper cover can be sealed at an opening of the inner cavity;
in the step of cutting the wafer, the quartz crystal rod is cut into wafers with high precision, the length of the wafers is 2.10-2.202 mm, the width of the wafers is 1.49-1.59 mm, the thickness of the wafers is 0.15-0.208 mm, the edges of the wafers are chamfered, the thickness of the edges of the wafers is 0.10-0.13 mm, and the average impedance of the wafers is 68-140 omega;
in the step of coating, the film is coated in a coating machine, wherein the size of the electrode is 1.4 x 1.3mm;
in the step of dispensing, a dispensing point is arranged at the bottom of an inner cavity of the base, the wafer is fixed on the dispensing point, a rubberizing point is arranged above the wafer at a position corresponding to the dispensing point, and the diameters of the rubberizing point and the dispensing point are 0.25-0.30 mm;
in the sealing step, the upper cover is sealed on the base.
Preferably, in the steps of front washing, wafer arrangement and back washing, the wafer is cleaned for the first time by an ultrasonic cleaner, then the wafer is arranged by a wafer arrangement machine, and the wafer after the wafer arrangement is cleaned for the second time.
Preferably, the time of the first washing and the second washing is 2 to 3 hours.
Preferably, in the step of curing, the curing is performed by heating in a curing oven, and a temperature zone in the curing oven is set: 200-300 ℃ and the rotating speed is 25mm/min.
Preferably, in the fine tuning step, the frequency of the crystal is adjusted by means of silver scraping.
Preferably, in the step of dispensing, the wafer and the base are connected and conducted through epoxy resin silver glue.
Preferably, in the sealing step, the upper cover and the base of the mounted wafer are sealed by electrode hot-melt parallel welding.
Preferably, in the step of manufacturing the base and the upper cover, the base and the solder ring are manufactured by adopting a ceramic plate, and after being combined by silver-copper solder, the upper cover is manufactured by adopting metal after the part to be welded is plated with gold.
In the manufacturing process of the SMD3225 wafer resonator, the following improvements are made:
1. the wafer size is increased while the electrode size is increased to improve the large impedance problem due to the wafer being too thick: taking 3225/8.000M wafer as an example, the common wafer size before improvement is 2.20mm by 1.52mm, the electrode size is 1.35 mm by 1.20mm, the impedance average value is 270 Ω, the impedance is large, the market share is low, the wafer size after improvement is 2.202mm by 1.59mm, the electrode size is 1.4 mm by 1.3mm, the impedance average value after improvement can reach 140 Ω, the impedance average is reduced by 130 Ω, and the reduction ratio is 48.15%.
2. Increasing the chamber size in the susceptor to accommodate the problems with increased wafer area: the size of the inner cavity of the conventional 3225 base is 2.40-1.70-0.34 mm, the production length direction space is only 0.11mm, the width direction space is only 0.198mm, and the precision of equipment and treatment tools cannot be achieved; the size of the cavity in the base is 2.55 x 1.85 x 0.34mm, and the diameters of the glue applying point and the glue discharging point are 0.25-0.30 mm.
3. The edge of the wafer is chamfered, so that the edge is thinned, and the problems that the wafer is not easy to fix and the impedance characteristic is large due to the fact that the wafer is too thick are solved: the wafer edge is thinned, and the thickness of the wafer edge is 0.11-0.13 mm.
4. The design of the targeted electrode surface fillet is used for solving the problem of short circuit of electrode coating caused by wafer edge chamfering.
The beneficial effects of the invention are as follows: in the manufacturing process of the SMD3225 wafer resonator, the volume of the wafer and the area of the electrode are increased, the thickness of the wafer at the reverse edge is reduced, the impedance is reduced, and the size of the cavity in the base is increased to adapt to the size of the wafer; the wafer edge is chamfered and thinned, and meanwhile, the electrode face fillets are designed to adapt to the wafer edge chamfering, so that the stability and reliability of a product are improved.
Detailed Description
The present invention will now be described in further detail.
Example 1:
this embodiment is used for SMD3225/10.000M wafers:
a resonator manufacturing process for an SMD3225 wafer, comprising the steps of:
manufacturing a base and an upper cover, cutting a wafer, front washing, arranging the wafer, rear washing, coating film, dispensing, curing, fine tuning, sealing and welding, ageing, reflow soldering, detecting leakage, testing a printing braid, packaging and warehousing;
in the step of manufacturing the base and the upper cover, the base is formed by combining a substrate and a welding ring through silver-copper solder, a cavity between the welding ring and the substrate is an inner cavity, the size of the inner cavity is 2.55 x 1.85 x 0.34mm, and the upper cover can be sealed at an opening of the inner cavity;
in the step of cutting the wafer, the quartz crystal rod is cut into wafers with high precision, the length of the wafers is 2.20mm, the width of the wafers is 1.55mm, the thickness of the wafers is 0.17mm, the edges of the wafers are chamfered, the thickness of the edges of the wafers is 0.10-0.12 mm, and the average impedance of the wafers is 68 omega;
in the step of coating, the film is coated in a coating machine, wherein the size of the electrode is 1.4 x 1.3mm;
in the step of dispensing, a dispensing point is arranged at the bottom of an inner cavity of the base, the wafer is fixed on the dispensing point, a rubberizing point is arranged above the wafer at a position corresponding to the dispensing point, and the diameters of the rubberizing point and the dispensing point are 0.25-0.30 mm;
in the sealing step, the upper cover is sealed on the base.
In this embodiment: in the steps of front washing, sheet discharging and back washing, the ultrasonic cleaner is used for cleaning the wafer for the first time, then the sheet discharging machine is used for discharging the sheet from the wafer, and the wafer after the sheet discharging is used for cleaning the wafer for the second time.
In this embodiment: the time of the first cleaning and the second cleaning is 2-3 hours.
In this embodiment: in the curing step, the curing is carried out by heating a curing furnace, and a temperature zone in the curing furnace is set: 200-300 ℃ and the rotating speed is 25mm/min.
In this embodiment: in the fine tuning step, the frequency of the crystal is adjusted by silver scraping.
In this embodiment: in the step of dispensing, the wafer and the base are connected and conducted through epoxy resin silver glue.
In this embodiment: in the sealing step, the upper cover and the base of the mounted wafer are sealed by electrode hot melting parallel welding.
In this embodiment: in the step of manufacturing the base and the upper cover, a ceramic wafer is used for manufacturing the base plate and the welding ring, after the combination of silver and copper solders, a gold plating layer is formed on the part to be welded, and the upper cover is manufactured by metal.
Example 2:
this embodiment is used for SMD3225/8.000M wafers:
a resonator manufacturing process for an SMD3225 wafer, comprising the steps of:
manufacturing a base and an upper cover, cutting a wafer, front washing, arranging the wafer, rear washing, coating film, dispensing, curing, fine tuning, sealing and welding, ageing, reflow soldering, detecting leakage, testing a printing braid, packaging and warehousing;
in the step of manufacturing the base and the upper cover, the base is formed by combining a substrate and a welding ring through silver-copper solder, a cavity between the welding ring and the substrate is an inner cavity, the size of the inner cavity is 2.55 x 1.85 x 0.34mm, and the upper cover can be sealed at an opening of the inner cavity;
in the step of cutting the wafer, the quartz crystal rod is cut into wafers with high precision, the length of the wafers is 2.202mm, the width of the wafers is 1.59mm, the thickness of the wafers is 0.208mm, the edges of the wafers are chamfered, the thickness of the edges of the wafers is 0.11-0.13 mm, and the average impedance of the wafers is 140 omega;
in the step of coating, the film is coated in a coating machine, wherein the size of the electrode is 1.4 x 1.3mm;
in the step of dispensing, a dispensing point is arranged at the bottom of an inner cavity of the base, the wafer is fixed on the dispensing point, a rubberizing point is arranged above the wafer at a position corresponding to the dispensing point, and the diameters of the rubberizing point and the dispensing point are 0.25-0.30 mm;
in the sealing step, the upper cover is sealed on the base.
In this embodiment: in the steps of front washing, sheet discharging and back washing, the ultrasonic cleaner is used for cleaning the wafer for the first time, then the sheet discharging machine is used for discharging the sheet from the wafer, and the wafer after the sheet discharging is used for cleaning the wafer for the second time.
In this embodiment: the time of the first cleaning and the second cleaning is 2-3 hours.
In this embodiment: in the curing step, the curing is carried out by heating a curing furnace, and a temperature zone in the curing furnace is set: 200-300 ℃ and the rotating speed is 25mm/min.
In this embodiment: in the fine tuning step, the frequency of the crystal is adjusted by silver scraping.
In this embodiment: in the step of dispensing, the wafer and the base are connected and conducted through epoxy resin silver glue.
In this embodiment: in the sealing step, the upper cover and the base of the mounted wafer are sealed by electrode hot melting parallel welding.
In this embodiment: in the step of manufacturing the base and the upper cover, a ceramic wafer is used for manufacturing the base plate and the welding ring, after the combination of silver and copper solders, a gold plating layer is formed on the part to be welded, and the upper cover is manufactured by metal.
The present invention has been made in view of the above-described circumstances, and it is an object of the present invention to provide a portable electronic device capable of performing various changes and modifications without departing from the scope of the technical spirit of the present invention. The technical scope of the present invention is not limited to the description, but must be determined according to the scope of claims.
Claims (6)
1. A process for manufacturing a resonator of an SMD3225 wafer, characterized by: the method comprises the following steps:
manufacturing a base and an upper cover, cutting a wafer, front washing, arranging the wafer, rear washing, coating film, dispensing, curing, fine tuning, sealing and welding, ageing, reflow soldering, detecting leakage, testing a printing braid, packaging and warehousing;
in the step of manufacturing the base and the upper cover, the base is formed by combining a substrate and a welding ring through silver-copper solder, a cavity between the welding ring and the substrate is an inner cavity, the size of the inner cavity is 2.55 x 1.85 x 0.34mm, the upper cover can be sealed at the opening of the inner cavity, the substrate and the welding ring are manufactured by adopting a ceramic plate, after the combination of the silver-copper solder, a gold plating layer is formed on a part to be welded, and the upper cover is manufactured by adopting metal;
in the step of cutting the wafer, the quartz crystal rod is cut into wafers with high precision, the length of the wafers is 2.10-2.202 mm, the width of the wafers is 1.49-1.59 mm, the thickness of the wafers is 0.15-0.208 mm, the edges of the wafers are chamfered, the thickness of the edges of the wafers is 0.10-0.13 mm, and the average impedance of the wafers is 68-140 omega;
in the step of coating, the film is coated in a coating machine, wherein the size of the electrode is 1.4 x 1.3mm;
in the step of dispensing, a dispensing point is arranged at the bottom of an inner cavity of the base, the wafer is fixed on the dispensing point, a rubberizing point is arranged above the wafer at a position corresponding to the dispensing point, and the diameters of the rubberizing point and the dispensing point are 0.25-0.30 mm;
in the sealing welding step, the upper cover is sealed on the base;
in the steps of front washing, sheet discharging and back washing, the ultrasonic cleaner is used for cleaning the wafer for the first time, then the sheet discharging machine is used for discharging the sheet from the wafer, and the wafer after the sheet discharging is used for cleaning the wafer for the second time.
2. The process for manufacturing a resonator of an SMD3225 wafer of claim 1, wherein: the time of the first cleaning and the second cleaning is 2-3 hours.
3. The process for manufacturing a resonator of an SMD3225 wafer of claim 1, wherein: in the curing step, the curing is carried out by heating a curing furnace, and a temperature zone in the curing furnace is set: 200-300 ℃ and the rotating speed is 25mm/min.
4. The process for manufacturing a resonator of an SMD3225 wafer of claim 1, wherein: in the fine tuning step, the frequency of the crystal is adjusted by silver scraping.
5. The process for manufacturing a resonator of an SMD3225 wafer of claim 1, wherein: in the step of dispensing, the wafer and the base are connected and conducted through epoxy resin silver glue.
6. The process for manufacturing a resonator of an SMD3225 wafer of claim 1, wherein: in the sealing step, the upper cover and the base of the mounted wafer are sealed by electrode hot melting parallel welding.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811434847.5A CN109639254B (en) | 2018-11-28 | 2018-11-28 | Manufacturing process of resonator of SMD3225 wafer |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201811434847.5A CN109639254B (en) | 2018-11-28 | 2018-11-28 | Manufacturing process of resonator of SMD3225 wafer |
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| CN109639254A CN109639254A (en) | 2019-04-16 |
| CN109639254B true CN109639254B (en) | 2023-05-09 |
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Patent Citations (9)
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